CN106340585A - Oxygen-doped SbSe nano phase-change thin film material, preparation method and application of oxygen-doped SbSe nano phase-change thin film material - Google Patents
Oxygen-doped SbSe nano phase-change thin film material, preparation method and application of oxygen-doped SbSe nano phase-change thin film material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 98
- 239000010409 thin film Substances 0.000 title claims abstract description 85
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000001301 oxygen Substances 0.000 claims abstract description 55
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 55
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000004544 sputter deposition Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 24
- 229910052786 argon Inorganic materials 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims abstract description 3
- 230000008859 change Effects 0.000 claims description 55
- 239000007789 gas Substances 0.000 claims description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 18
- 238000003860 storage Methods 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 229910001882 dioxygen Inorganic materials 0.000 claims description 9
- 239000013077 target material Substances 0.000 claims description 6
- 238000005477 sputtering target Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 7
- 238000002425 crystallisation Methods 0.000 abstract description 6
- 230000008025 crystallization Effects 0.000 abstract description 6
- 229910052714 tellurium Inorganic materials 0.000 abstract description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract description 3
- 230000004913 activation Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000002120 nanofilm Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000001579 optical reflectometry Methods 0.000 description 5
- 239000012782 phase change material Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000010998 test method Methods 0.000 description 4
- 238000005280 amorphization Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
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Abstract
The invention belongs to the nanometer material technical field and relates to an oxygen-doped SbSe nano phase-change thin film material, preparation method and application of the oxygen-doped SbSe nano phase-change thin film material. The general chemical formula of the oxygen-doped SbSe nano phase-change thin film material is Sb70Se30Ox, wherein x represents an oxygen flow rate value, the unit of the oxygen flow rate value is sccm, and x is equal to 1, 2 or 3; and argon and oxygen are introduced simultaneously in a radio frequency sputtering process for depositing the Sb70Se30 thin film, and the Sb70Se30 thin film is prepared at the nanometer scale. Compared with a conventional Ge2Sb2Te5 phase-change thin film material, the oxygen-doped SbSe nano phase-change thin film material of the invention has high crystallization speed, high crystallization temperature, high activation energy, high amorphous state and high crystal resistance; and the oxygen-doped SbSe nano phase-change thin film material does not contain tellurium, so that the oxygen-doped SbSe nano phase-change thin film material has no negative impacts on human bodies and the environment. The oxygen-doped SbSe nano phase-change thin film material is suitable for preparing a high-speed, high-stability and low-power consumption phase-change memory, and has a very bright industrial prospect.
Description
Technical field
The invention belongs to technical field of nano material is and in particular to one kind mixes oxygen sbse nano phase change thin-film material, its system
Preparation Method, and its application in preparing phase transition storage.
Background technology
Phase transition storage (phase-change random access memory, abbreviation pcram) is a kind of with sulfur system
Compound is the new nonvolatile memory of storage medium.Storage medium material is in has high resistance during amorphous state, and is in
During crystalline state, there is low resistance, its principle is to make storage medium material in crystalline state (low resistance) and amorphous state using electric pulse heat
Mutually change between (high resistance), and then realize write and the erasing of information, the reading of information then relies on the change of measurement resistance
To realize.Because phase transition storage has (> 10 that have extended cycle life13Secondary), component size is little, memory density is high, reading speed is fast,
Stability is strong, anti-vibration and mutually compatible with existing integrated circuit technology the advantages of, thus be subject to get more and more researcheres and enterprise
The concern (referring to hu yifeng, et al., applied physics letter, 2016,108 (22): 223103) of industry.
ge2sb2te5It is phase-change storage material widely used at present although the balancing performance of its each side, too big
Shortcoming, but still suffer from much to be improved and improve place (referring to zhou xilin, et al., scientific
reports,2015,5:11150)).First, ge2sb2te5The phase velocity of thin-film material relatively slow it is impossible to meet following at a high speed,
The message storage requirement in big data epoch；Secondly, ge2sb2te5The heat stability of thin-film material is poor, and crystallization temperature only has 160
DEG C about, it is only capable of keeping data 10 years under 85 DEG C of ambient temperature, partly leading of following high integration can't be fully met
The requirement of body chip；In addition, the tellurium element in material has relatively low fusing point and relatively low vapour pressure, easily prepared in high temperature
Volatilize in journey, human body and environment are had a negative impact.
Content of the invention
In order to overcome the problems referred to above, it is an object of the invention to provide a kind of phase velocity is fast, stability is high, operation power consumption
Low, no the ecological hazard mix oxygen sbse nano phase change thin-film material and its preparation method and application.
Specifically, to achieve these goals, the present invention adopts the following technical scheme that
One kind mixes oxygen sb70se30Nano phase change thin-film material, its chemical general formula is sb70se30Ox (is abbreviated as sbseox), its
Middle x represents oxygen stream value, and unit is sccm, and x=1,2 or 3.In above-mentioned sb70se30In ox nano phase change thin-film material,
When x=1,2 or 3, thin-film material all shows the phase transition process of obvious amorphous-crystalline, and its stability is with x's
Increase the trend presenting monotone increasing, but as x=4, sbseo4 thin-film material no longer shows obvious phase transition process.
It should be noted that, although described mix oxygen sb70se30Nano phase change thin-film material belongs to nano-level thin-membrane material, but
It is not limited to the final form such as nano thin-film, can make different thickness by regulating and controlling sputtering time according to specific needs
Degree.
Above-mentioned mix oxygen sb70se30The preparation method of nano phase change thin-film material, it is completed by magnetron sputtering method.Pass through
In radio frequency sputtering deposition sb70se30It is passed through argon and oxygen during thin film simultaneously, and be prepared from nanometer scale.
Preferably, described mix oxygen sb70se30The concrete preparation method of nano phase change thin-film material comprises the following steps:
1) clean substrate；
2) install sputtering target material, set gas flow and the sputtering pressure of sputtering power, Sputtering Ar and oxygen；
3) oxygen sb is mixed using the method preparation of radio-frequency sputtering70se30Nano phase change thin-film material.
Preferably, the substrate that described magnetron sputtering method adopts is sio2/ si (100) substrate.
Preferably, the sputtering target material that described magnetron sputtering method adopts is sb70se30Target, atomic percent purity reaches
99.999%.
Preferably, the sputter gas that described magnetron sputtering method adopts are high-purity argon gas and high purity oxygen gas, and percent by volume is pure
Degree all reaches 99.999%；The total gas flow rate of argon and oxygen is 30sccm, and wherein the gas flow of oxygen is 1～3sccm,
The gas flow of argon is that (as x=1, argon is 29:1 with the gas flow ratio of oxygen to 27～29sccm；As x=2, argon
Gas is 28:2 with the gas flow ratio of oxygen；As x=3, argon is 27:3 with the gas flow ratio of oxygen).
Preferably, the background vacuum of described magnetron sputtering method is not more than 1 × 10-4pa.
Preferably, the sputtering power of described magnetron sputtering method is 25～35w, preferably 30w.
Preferably, the sputtering pressure of described magnetron sputtering method is 0.15～0.35pa, preferably 0.3pa.
Above-mentioned mix oxygen sb70se30Nano phase change thin-film material preparing phase transition storage, particularly high speed, high stability,
Application in the phase transition storage of low-power consumption.
Compared with prior art, using technique scheme the present invention has the advantage that
(1) with traditional ge2sb2te5Phase change film material is compared, and the present invention mixes oxygen sbse nano phase change thin-film material
There is crystallization rate faster, substantially increase the storage speed of pcram；Meanwhile, the nano film material of the present invention has relatively
High crystallization temperature and activation energy, greatly improve the stability of pcram；
(2) nano film material of the present invention has higher amorphous state and crystalline resistance, can effectively reduce pcram behaviour
Make power consumption.
(3) do not contain tellurium element in the nano film material of the present invention, human body and environment will not be had a negative impact.
(4) preparation method of the present invention mixes oxygen sbse nanometer by controlling the oxygen flow being passed through during magnetron sputtering to control
The content of oxygen element in phase change film material, the content of oxygen element can be precisely controlled.
Brief description
Fig. 1 is in sbseox (x=1,2 or 3) nano phase change thin-film material and comparative example 1 in the embodiment of the present invention 1 to 3
Sb70se30The In-situ resistance of thin film phase change material and the relation curve of temperature.
Fig. 2 is in sbseox (x=1,2 or 3) nano phase change thin-film material and comparative example 1 in the embodiment of the present invention 1 to 3
Sb70se30The out-of-service time of thin film phase change material and the relation curve of inverse temperature.
Fig. 3 is in sbseox (x=1,2 or 3) nano phase change thin-film material and comparative example 1 in the embodiment of the present invention 1 to 3
Sb70se30The kunbelka-munk function relation curve of thin film phase change material.
Fig. 4 be the embodiment of the present invention 2 in the optical reflectivity of sbseo2 nano phase change thin-film material amorphization with
The relation curve of time.
Specific embodiment
Technical scheme is expanded on further below in conjunction with the drawings and specific embodiments.It should be appreciated that
These embodiments are merely to illustrate the present invention, and are not intended to limit protection scope of the present invention.In addition, unless specifically indicated, following
Used in embodiment, instrument, reagent, material etc. all can be obtained by routine business means.
Embodiment 1: oxygen sb is mixed in preparation70se30Nano phase change thin-film material sbseo1.
(1) clean sio2The surface of/si (100) substrate and the back side, removal dust granule, organic and inorganic impurity:
Choose a size of sio of 5mm × 5mm2/ si (100) substrate, first in supersonic cleaning machine, with acetone, (purity is
More than 99%) it is cleaned by ultrasonic 3～5 minutes, deionized water rinsing；Ethanol (purity is more than 99%) is used again in supersonic cleaning machine
It is cleaned by ultrasonic 3～5 minutes, deionized water rinsing；High pure nitrogen dries up surface and the back side；Dry steam in 120 DEG C of baking ovens, dry
The dry 20 minutes time.
(2) prepare before magnetron sputtering:
In magnetron sputtering coating system (jgp-450 type), by middle for step (1) sio to be sputtered preparing2/si(100)
Substrate is placed on base, by sb70se30Alloy (atomic percent purity reaches 99.999%) is arranged on magnetic control as target
In radio frequency (rf) sputtering target, and the sputtering chamber of magnetron sputtering coating system is carried out evacuation, until within the chamber vacuum reaches
To 1 × 10-4pa.
(3) prepare sbseo1 nano film material:
It is passed through high-purity argon gas and high purity oxygen gas as sputter gas in sputtering chamber, argon volume basis in high-purity argon gas
Ratio reaches 99.999%；In high purity oxygen gas, oxygen percent by volume reaches 99.999%.Set argon flow amount as 29sccm, oxygen
Flow is 1sccm, and sputtering pressure is adjusted to 0.3pa；Set the sputtering power of radio-frequency power supply as 30w；
Space base support is rotated to sb70se30Target position, opens sb70se30The radio-frequency power supply being applied on target, sets sputtering time
For 123s, start to sb70se30Target is sputtered, to clean sb70se30Target material surface；
Treat sb70se30After target material surface cleaning finishes, close sb70se30The radio-frequency power supply being applied on target, will be to be sputtered
sio2/ si (100) substrate rotates to sb70se30Target position, is then turned on sb70se30The radio-frequency power supply being applied on target position, sputtering speed
Rate is 0.4075nm/s, and sputtering time is set as 123s, obtains sbseo1 nano film material.
The thickness of the sbseo1 nano phase change thin-film material that the present embodiment obtains is 50nm.The thickness of thin-film material is by sputtering
Time control, sputtering time is longer, and film thickness is thicker, and sputtering time is shorter, and film thickness is thinner.
Embodiment 2: oxygen sb is mixed in preparation70se30Nano phase change thin-film material sbseo2.
Preparation method is substantially the same manner as Example 1, difference be in step (3) be passed through in sputtering chamber high-purity
When argon and high purity oxygen gas, set argon flow amount as 28sccm, oxygen flow is 2sccm.
Embodiment 3: oxygen sb is mixed in preparation70se30Nano phase change thin-film material sbseo3.
Preparation method is substantially the same manner as Example 1, difference be in step (3) be passed through in sputtering chamber high-purity
When argon and high purity oxygen gas, set argon flow amount as 27sccm, oxygen flow is 3sccm.
Comparative example 1: oxygen sb is not mixed in preparation70se30Nano phase change thin-film material sbse.
Preparation method is substantially the same manner as Example 1, difference be in step (3) be passed through in sputtering chamber high-purity
During gas, set argon flow amount as 30sccm, and be not passed through oxygen, maintain sputtering pressure to be 0.3pa simultaneously.
sb70se30After target material surface cleaning finishes, close sb70se30The radio-frequency power supply being applied on target, by substrate to be sputtered
Rotate to sb70se30Target position, opens sb70se30The radio-frequency power supply being applied on target position, obtains nano phase change thin film after sputtering 123s
Material sbse, film thickness is 50nm.
Experimental example 1: the performance test of nano phase change thin-film material.
In order to investigate the performance mixing oxygen sbse nano phase change thin-film material of the present invention, according to described in embodiment 1 to 3
Preparation method, be obtained respectively have that difference mixes oxygen amount mix oxygen sbse nano phase change thin-film material (film thickness is 50nm),
And be compared test with the thin-film material that is obtained in comparative example 1, obtain the In-situ resistance of each nano phase change thin-film material with
The out-of-service time pass corresponding with inverse temperature of the relation curve (as shown in Figure 1) of temperature and each nano phase change thin-film material
It is curve (as shown in Figure 2).
In fig. 1 and 2, sbse is the nano phase change thin-film material not mixing oxygen in comparative example 1；Sbseo1 is embodiment
That prepares in 1 mixes oxygen sbse nano phase change thin-film material, and the flow of the high purity oxygen gas being passed through in sputtering chamber during sputtering is
1sccm；Sbseo2 mixes oxygen sbse nano phase change thin-film material for prepare in embodiment 2, is passed through during sputtering in sputtering chamber
High purity oxygen gas flow be 2sccm；Sbseo3 mixes oxygen sbse nano phase change thin-film material, sputtering for prepare in embodiment 3
When the flow of high purity oxygen gas that is passed through in sputtering chamber be 3sccm.
The In-situ resistance of each nano phase change thin-film material is as follows with the relation test method of temperature: outside by heating platform
Connect 6517b type megameter (keithley instrument company, the U.S.) and build in site measurement resistance v. temperature and resistivity-time pass
The test system of system.The temperature of heating platform is by tp94 type temperature control system (linkam scientific instrument Co., Ltd, English
State) adjust, cooling is controlled using liquid oxygen by lnp94/2 type cooling system, and temperature rate reaches as high as 90 DEG C/min,
Temperature control is very accurate.Heating rate employed in this test process is 10 DEG C/min.In heating and cooling process, fixation is added in thin
Voltage on membrane probe is 2.5v, measures, using megameter, the electric current varying with temperature, then is converted into corresponding resistance.
As shown in figure 1, at low temperature, all thin-film materials are in high-resistance amorphous state.Continuous liter with temperature
Height, the resistance of thin-film material slowly reduces, and when reaching its phase transition temperature, the resistance of thin-film material reduces rapidly, reaches a certain
Substantially keep this resistance constant after value.Above-mentioned test result shows, thin-film material there occurs by the transformation of amorphous state to crystalline state, and
And the crystallization temperature of thin-film material increases to 240 DEG C of sbseo3 in embodiment 3 by 208 DEG C of sbse in comparative example 1, this is described
The heat stability of the nano phase change thin-film material of invention is higher.Meanwhile, the crystalline resistance of the nano phase change thin-film material of the present invention
Increased to 10884 ω of sbseo3 by 804 ω of sbse, expand as many as 13 times, such that it is able to effective reduction reset process
Power consumption.
The out-of-service time of each nano phase change thin-film material is as follows from the corresponding relation method of testing of inverse temperature: different
Constant annealing temperature under measure the curve that changes with annealing time of resistance of nano phase change thin-film material.Electricity when thin-film material
When resistance is reduced to the 50% of original numerical value, that is, think that resistance had lost efficacy.By the out-of-service time under different temperatures and corresponding temperature
Mapping reciprocal, and by curve extending to 10 years (about 315360000s), obtain corresponding temperature.Using phase-change material by data
When keeping 10 years, corresponding temperature can be used to pass judgment on the data holding ability of material, this be also the judgment criteria generally acknowledged in the industry it
One.
As shown in Fig. 2 data is kept the temperature of 10 years by the nano phase change thin-film material sbse not mixing oxygen in comparative example 1
There are 141 DEG C, and the temperature that data keeps 10 years is all improved by the sbseox nano phase change thin film of the present invention, wherein sbseo3
Nano film material can improve the temperature that data keeps 10 years to 176 DEG C, and traditional ge2sb2te5Thin-film material is by number
It is only 85 DEG C according to the temperature keeping 10 years.It follows that the oxygen sbse nano phase change thin-film material of mixing of the present invention has than tradition
ge2sb2te5The more excellent data holding ability of thin-film material.
The kunbelka-munk function relation curve of each phase change film material is as shown in figure 3, this curve can be used for characterizing
The optical absorption characteristic of material, concrete method of testing is as follows: using 7100crt type near infrared spectrometer (Shanghai precision instrument
Instruments and meters company limited) optical reflectivity (r) of test material in the range of the test wavelength of 400～2500nm, the suction of material
Yield (a) is by (1-r)2/ 2r determines, the optical band gap of material is determined by the property in high-absorbility region, the wherein optics of thin film
Absorption characteristic and interband change closely related.
As shown in figure 3, the optical band gap e of materialgCorresponding absorbance is the linear fit part of curve when 0 in energy axes
Values of intercept.The e of the sbse nano phase change thin-film material of oxygen is not mixed in comparative example 1gOnly 0.74ev, and the sbseox of the present invention
The optical band gap of nano phase change thin film is all improved, the wherein eg of sbseo3 nano phase change thin-film material can improve to
1.11ev.The optical band gap increasing will lead to bigger eg/kbT ratio, the intrinsic carrier concentration of thin-film material and electrical conductivity are then
Can accordingly decline, this will be helpful to reduce the reset operation power consumption of device.
The optical reflectivity of sbseo2 nano phase change thin-film material amorphization and relation curve such as Fig. 4 institute of time
Show, this curve can be used for testing phase velocity (material is used for the key of data storage), and method of testing is as follows: with certain frequency
Laser irradiates phase-change material so as to undergo phase transition, and tests transformation time over time by measuring optical reflectivity.?
To in amorphous transition process, optical reflectivity can significantly reduce crystalline state.
As shown in figure 4, the amorphization time of sbseo2 nano phase change thin-film material only have 1.8ns, compared to tradition
Ge2sb2te5Thin-film material (about 16ns), about improves an order of magnitude, illustrates that the present invention's mixes oxygen sbse nanometer phase
Thinning membrane material has than traditional ge2sb2te5The more excellent superelevation phase velocity of thin-film material.
Claims (10)
1. one kind mixes oxygen sb70se30The preparation method of nano phase change thin-film material, described mixes oxygen sb70se30Nano phase change thin film material
Material is prepared by magnetron sputtering method, by radio frequency sputtering deposition sb70se30It is passed through argon and oxygen during thin film simultaneously,
And be prepared from nanometer scale；The total gas flow rate of described argon and described oxygen is 30sccm, the gas of wherein said oxygen
Body flow is 1～3sccm, and the gas flow of described argon is 27～29sccm.
2. preparation method according to claim 1 it is characterised in that:
The substrate that described magnetron sputtering method adopts is sio2/ si (100) substrate.
3. preparation method according to claim 1 it is characterised in that:
The sputtering target material that described magnetron sputtering method adopts is sb70se30Target, its atomic percent purity reaches 99.999%.
4. preparation method according to claim 1 it is characterised in that:
The sputter gas that described magnetron sputtering method adopts are high-purity argon gas and high purity oxygen gas, and the percent by volume purity of the two all reaches
To 99.999%.
5. preparation method according to claim 1 it is characterised in that:
The background vacuum of described magnetron sputtering method is not more than 1 × 10-4pa.
6. preparation method according to claim 1 it is characterised in that:
The sputtering power of described magnetron sputtering method is 25～35w.
7. preparation method according to claim 1 it is characterised in that:
The sputtering pressure of described magnetron sputtering method is 0.15～0.35pa.
8. one kind mixes oxygen sb70se30Nano phase change thin-film material, it is by preparation according to any one of claim 1 to 7
Prepared by method.
9. according to claim 8 mix oxygen sb70se30Nano phase change thin-film material it is characterised in that:
Described mix oxygen sb70se30The chemical general formula of nano phase change thin-film material is sb70se30Ox, wherein x represent oxygen stream value,
Unit is sccm, and x=1,2 or 3.
10. according to claim 8 or claim 9 mix oxygen sb70se30Nano phase change thin-film material answering in preparing phase transition storage
With.
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