CN106340439A - Wafer structure for laser de-bonding processing - Google Patents
Wafer structure for laser de-bonding processing Download PDFInfo
- Publication number
- CN106340439A CN106340439A CN201510390261.3A CN201510390261A CN106340439A CN 106340439 A CN106340439 A CN 106340439A CN 201510390261 A CN201510390261 A CN 201510390261A CN 106340439 A CN106340439 A CN 106340439A
- Authority
- CN
- China
- Prior art keywords
- radium
- shine
- peel ply
- bonding layer
- lift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
The invention discloses a wafer structure for laser de-bonding processing, which comprises a carrier plate, a de-bonding layer, a bonding layer and a semiconductor wafer, and is characterized in that the de-bonding layer is arranged at one side of the carrier plate; the bonding layer is arranged at one side of the de-bonding layer and away from the carrier plate; and the semiconductor wafer is arranged at one side of the bonding layer and away from the de-bonding layer. Laser light with the wavelength ranging between 193nm and 400nm is received above the carrier plate. The thickness of the de-bonding layer is greater than 0.2 time of the absorption length and less than 1 time of the absorption length. The absorption length is operating wavelength of the laser light on the de-bonding layer.
Description
Technical field
The present invention is related to a kind of crystal circle structure, can prevent in particular in radium-shine lift-off processing
Damage the crystal circle structure of bonding layer.
Background technology
Three dimensional integrated circuits (3d integrated circuit, hereinafter referred to as 3d-ic) is to be bored by straight-through silicon wafer
The method in hole (through silicon via) on wafer etching or to hole in the way of radium-shine, then by conduction
Formation conductive channel in boring inserted by material, is finally stacked wafer thinning again, combines to be formed.
However, the thickness more and more thinner of 3d-ic wafer, and lead to wafer more and more fragile, therefore can partly lead
The defect of wafer is produced in system journey (polishing, cutting etc.) step, it follows that the thinning wafer of operation
Most automation equipment is produced and significantly challenges.
Refer to Fig. 1 a to Fig. 1 e, be shown in that the radium-shine stripping (de-bonding) of 3d-ic processes shows
It is intended to.As shown in Figure 1a, the top layer of layered structure 10 is semiconductor wafer 102, and bottom holds for one
Carried base board 104, and it is followed successively by a bonding layer between semiconductor crystal wafer 102 and bearing substrate 104
106 (adhesive layer) and a peel ply 108 (release layer).In Figure 1b, by layered structure
10 reversions are so that bearing substrate 104 is in the top, and are followed successively by peel ply below bearing substrate 104
108 with bonding layer 106, and semiconductor crystal wafer 102 is in bottom.Then, as described in Fig. 1 c, holding
The radium-shine processing method of macromolecule is applied on carried base board 104.As shown in Figure 1 d, because peel ply 108 has
There is special photosensitive material, after the laser light receiving specific wavelength, peel ply 108 can dissociate, and make half
Produce air gap between semiconductor wafer 102 and bearing substrate 104 and automatically strip.As shown in fig. le,
Finally again semiconductor crystal wafer 102 top residue is cleaned up, complete the radium-shine lift-off processing of 3d-ic.
However, the laser light being generally used for semiconductor crystal wafer is diode excitation formula solid-state (diode pumped
Solid-state, dpss) short pulse is radium-shine, and the wavelength of this family macromolecule laser light is about received 248 to 308
Between rice (nm), it is easily and polymeric material produces reaction.As shown in Fig. 2 showing existing radium-shine stripping
The generalized section of the wafer layered structure processing, in the radium-shine lift-off processing of macromolecule, unnecessary is radium-shine
Light can be engaged layer 106 and absorb, and lead to the bonding layer 106 below peel ply 108 to produce and damage, enter
And make the selectivity between peel ply 108 and bonding layer 106 poor.
Accordingly, there exist bonding layer 106 and the stripping that a kind of Demand Design is applied to the radium-shine lift-off processing of macromolecule
Absciss layer 108, allows laser light not result in the damage of bonding layer 106, and then improves the radium-shine stripping of 3d-ic
Yield from processing procedure.
Content of the invention
Above-mentioned relevant in order to solve the problems, such as, present invention is primarily targeted at providing one kind to be used for radium-shine stripping
From the crystal circle structure processing, this crystal circle structure can avoid damaging bonding layer in radium-shine lift-off processing.
According to above-mentioned purpose, the present invention provides a kind of crystal circle structure for radium-shine lift-off processing, comprises
One support plate, a peel ply, a bonding layer and semiconductor wafer.And peel ply is arranged at its of support plate
Middle one side.Bonding layer is arranged at the wherein one side of peel ply and away from support plate.Semiconductor crystal wafer is arranged at this
Bonding layer wherein one side and away from peel ply.Wherein, with a wavelength between 193nm to 400nm
Radium-shine light irradiation support plate, and laser light operation has an absorption length in peel ply, and makes peel ply
Absorption length and the absorption length less than 1 times that thickness is more than 0.2 times.
Above-mentioned relevant in order to solve the problems, such as, another main purpose of the present invention is to provide one kind to have spy
Determine the bonding layer of material and the crystal circle structure of peel ply, and give bonding layer and stripping according to specific material
The suitable thickness of layer, and then prevent bonding layer because being produced damage by laser light, improve silicon wafer process
Yield.
According to above-mentioned purpose, the present invention provides a kind of crystal circle structure for radium-shine lift-off processing, comprises
One support plate, a peel ply, a bonding layer and semiconductor wafer.And peel ply is arranged at its of support plate
Middle one side.Bonding layer is arranged at the wherein one side of peel ply and away from support plate.Semiconductor crystal wafer is arranged at this
Bonding layer wherein one side and away from peel ply.Wherein, with a radium-shine light irradiation support plate, and laser light behaviour
Make, in peel ply, there is an absorption length.And make the thickness of peel ply be more than 0.2 times of absorption length and little
In 1 times this absorption length.One absorbed power of another peel ply is between 10,000cm-1To 100,000cm-1
Between, and an absorbed power of bonding layer is less than 8,000cm-1.
Brief description
Fig. 1 a to Fig. 1 e is shown in the schematic diagram of the radium-shine lift-off processing of 3d-ic；
Fig. 2 shows the generalized section of the wafer layered structure of existing radium-shine lift-off processing；
Fig. 3 shows the section of structure of first embodiment of the invention；
Fig. 4 shows the measurement curve map of the test layer measuring three kinds of different materials by interferometer；With
And
Fig. 5 shows the structural representation of the second embodiment of the present invention.
[symbol description]
102 semiconductor crystal wafers
104 bearing substrates
106 bonding layers
108 peel plies
302 support plates
304 test layers
702 support plates
704 peel plies
706 bonding layers
708 semiconductor crystal wafers
A first test layer
B second test layer
C the 3rd test layer
Dpss diode excitation formula solid-state short pulse is radium-shine
Specific embodiment
The explanation of following embodiment is with reference to additional schema, may be used to enforcement in order to illustrate the present invention
Specific embodiment.The direction term that the present invention is previously mentioned, for example " on ", D score, "front", "rear",
"left", "right", " interior ", " outward ", " side " etc., are only the directions with reference to annexed drawings.
Therefore, the direction term of use is to illustrate and understand the present invention, and is not used to limit the present invention.?
In figure, the similar unit of structure is to be represented with identical label.
In order to peel ply can be completely fallen off under radium-shine lift-off processing, and bonding layer can be because of
Radium-shine light irradiation produces to be damaged, the stripping layer material of the present invention be selected from polycarbonate (polycarbonate,
Pc), polyimides (polyimide, pl), photo resistance (photoresistance), carbon-based polymer (carbon
Based polymer), polyisoprene rubber (polyisoprene rubber), fluosite
(phenol-formaldehyde resin), epoxy resin (epoxy resin), carbon-base film (carbone base
Thin film), Graphene (graphene), silicon nitride film (sin film), silicon fiml (si film), hydrogenated amorphous
One of them of silicon fiml (a-si:h film), microcrystalline sillicon film (μ c-si:h film) and above-mentioned any combination.And connect
Close layer material be selected from epoxy resin, PET (polyethylene terephthalate,
Pet), cyclic olefin polymer (cyclo olefin polymer), silicon-based polymer, polyamides methylamine and above-mentioned
One of them of any combination.
As shown in figure 3, being the section of structure showing first embodiment of the invention.In order to understand different materials
The peel ply of material or bonding layer can reach under radium-shine light irradiation the present invention prevent damage bonding layer
Purpose, by the test layer 304 that multiple different chemical compositions are respectively coated on a support plate 302, with
Instrument is analyzing its characteristic.In this embodiment, support plate 302 is preferably glass substrate, and its thickness is
0.7 millimeter (mm).It is noted that the test layer 304 of the present embodiment may be selected following three kinds of materials entering
Row analysis, but be not limited.For example, the first test layer a is polyisoprene rubber, its
Thickness is 0.5 micron (μm), and second test layer b is polyimides, and its thickness is 1.7 μm, the 3rd
Planting test layer c is epoxy resin, and its thickness is more than 3 μm.
And please coordinate with reference to following table 1, the test layer of three kinds of different materials of display passes through spectroscope
(spectroscope) tables of data recording.
As shown in table 1, the light transmittance (transmittance) of the first test layer a is 3.4%, absorbs system
Number (α) is 47000cm-1, absorption length is 256nm.The light transmittance of second test layer b is 17.4%,
Absorption coefficient is 35000cm-1, absorption length is 286nm.The light transmittance of the third test layer c is
4.5%, absorption coefficient is 2892cm-1, absorption length is 3458nm.For radium-shine in this embodiment
Light is the radium-shine dpss of diode excitation formula solid-state short pulse, and radium-shine wavelength is preferably 355nm, and power is 1
To 6 watts (w), frequency is 50khz, and pulse width is less than 12 nanoseconds (ns).In addition, being done by white light
Interferometer (white light interferometers) is measuring the ablation depth of the test layer of different materials
(ablation depth), judges the absorption energy to radium-shine wavelength 355nm for each test layer by ablation depth
Power, if to can get by force ablation depth deeper for absorbability, if absorbability is weak, the ablation depth obtaining is relatively
Shallow.
As shown in figure 4, the measurement that display measures the test layer of three kinds of different materials by interferometer is bent
Line chart, the working range of laser light is in 50 to 250 (mj/cm2) transition energy density (power density)
Between.According to measurement result, the transition energy density of the first test layer a is 40 to 50 (mj/cm2),
Ablation depth is 145nm, and absorption length is 256nm.The transition energy density of the second test layer b is
40 to 50 (mj/cm2), ablation depth is 219.4nm, and absorption length is 286nm.3rd test layer c
Transition energy density be 140 to 150 (mj/cm2), ablation depth is 26.2nm, and absorption length is
3458nm.
And please coordinate with reference to following table 2, the tables of data of the test layer measurement of three kinds of different materials of display.
According to the result of above-mentioned measurement, the first test layer a and the second test layer b are preferably applied to peel ply,
And the 3rd test layer c is preferably applied to bonding layer.In addition, by above-mentioned measurement result, the facing of peel ply
Boundary's energy density is preferably in 20 to 60 (mj/cm2) between, the preferably minimum 50nm of thickness of its coating,
It is about 0.2 times of absorption length, and coating thickness is 250nm to the maximum, it is approximately equal to absorption length.
In addition, the absorption coefficient of peel ply is in 10,000 to 100,000cm-1Between.The transition energy of bonding layer
Density is preferably more than 120 (mj/cm2), about the 1.5 to 7 of peel ply times.And the absorption coefficient of bonding layer
Less than 8,000cm-1.
As shown in figure 5, the structural representation of the display second embodiment of the present invention.This crystal circle structure includes
One support plate 702, a peel ply 704, a bonding layer 706 and semiconductor wafer 708.In the present embodiment
In, the material of support plate 702 can be a glass substrate.Peel ply 704 is configured at wherein the one of support plate 702
Face, and the material of peel ply 704 can be a polyisoprene rubber.Bonding layer 706 is configured at peel ply
704 wherein one side and away from support plate 702, the material of bonding layer 706 can be epoxy resin.Semiconductor
Wafer 708 is configured at the wherein one side of bonding layer 706 and away from peel ply 704.The material of above layers
It is only an embodiment explanation, but be not limited.
In the present embodiment, the thickness of peel ply 704 is 280nm, and the thickness of bonding layer 706 is 10 μm.
Then, a laser light, under the radium-shine light irradiation of different capacity, Ke Yifa are applied above support plate 702
Now all without damage bonding layer 706, and please coordinate with reference to following table 3, the experiment of display second embodiment
Result table.
According to above-mentioned experimental result, laser light can't be produced with the chemical materials contained by bonding layer 706
Chemical change, and lead to the damage of bonding layer 706.In addition, here is it should be noted that in this enforcement
The thickness of peel ply 704 in example is not limited only to 280nm, any bonding layer 706 can be prevented to be subjected to
Peel ply 704 thickness of the destruction of laser light is applied both in the present invention.The ripple of the laser light of the present invention
Long preferably 355nm, but here is not limited to.In addition, the material of peel ply 704 is not intended to be limited to
It is applied to polyisoprene rubber, the material of bonding layer 706 is not limited to epoxy resin.
Therefore in order to prevent traditionally radium-shine lift-off processing when laser light penetrate peel ply and destroy joint
Layer, between 193nm to 400nm, it is preferable for the scope setting radium-shine wavelength in the present invention
Radium-shine wave-length coverage between for 248nm to 360nm.Peel ply is made to need to fully absorb laser light,
And the preferred thickness of peel ply is more than 0.2 times of absorption length and the absorption length less than 1 times, wherein,
The wavelength that absorption length operates on peel ply for laser light.In addition, the acceptable radium-shine power of peel ply
Less than bonding layer, in other words, the acceptable radium-shine power of bonding layer is 1.5 to 7 times of peel ply.
Under the operative wavelength of laser light, the preferable absorbed power (absorption coefficient) of peel ply between
10,000cm-1To 100,000cm-1Between, and the preferable absorbed power of bonding layer is less than 8,000cm-1.
In sum, the design of the present invention, allows bonding layer and peel ply select specific material respectively, and
Give suitable thickness according to specific material, bonding layer can be prevented because being produced damage by laser light
Bad, and then lift the yield of silicon wafer process.
Although the present invention is disclosed above with aforesaid preferred embodiment, so it is not limited to the present invention,
Any those skilled in the art, without departing from the spirit and scope of the present invention, when can make a little change
With retouching, the scope of patent protection of the therefore present invention must be defined depending on this specification appending claims
Person is defined.
Claims (11)
1. a kind of crystal circle structure for radium-shine lift-off processing is it is characterised in that comprise:
One support plate；
One peel ply, is configured at the wherein one side of this support plate；
One bonding layer, is configured at the wherein one side of this peel ply and away from this support plate；And
Semiconductor wafer, is configured at the wherein one side of this bonding layer and away from this peel ply；
Wherein, with this support plate of radium-shine light irradiation, the optical wavelength range of this laser light is between 193nm extremely
Between 400nm, the operation of this laser light has an absorption length in this peel ply, and the thickness of this peel ply is big
In 0.2 times this absorption length and less than 1 times this absorption length.
2. be used for as claimed in claim 1 the crystal circle structure of radium-shine lift-off processing it is characterised in that
The material of this peel ply is selected from polycarbonate, polyimides, photo resistance, carbon-based polymer, poly- different
Pentadiene rubber, fluosite, epoxy resin, carbon-base film, Graphene, silicon nitride film, silicon fiml,
One of them of hydrogenated amorphous silicon film, microcrystalline sillicon film and above-mentioned any combination.
3. be used for as claimed in claim 1 the crystal circle structure of radium-shine lift-off processing it is characterised in that
The material of this bonding layer is selected from epoxy resin, PET, cyclic olefin polymer, silicon
One of them of based polyalcohol, polyamides methylamine and above-mentioned any combination.
4. be used for as claimed in claim 1 the crystal circle structure of radium-shine lift-off processing it is characterised in that
One absorbed power of this peel ply is between 10,000cm-1To 100,000cm-1Between.
5. be used for as claimed in claim 1 the crystal circle structure of radium-shine lift-off processing it is characterised in that
One absorbed power of this bonding layer is less than 8,000cm-1.
6. be used for as claimed in claim 1 the crystal circle structure of radium-shine lift-off processing it is characterised in that
The radium-shine power that this bonding layer accepts is between 1.5 times to 7 times of this peel ply.
7. a kind of crystal circle structure for radium-shine lift-off processing is it is characterised in that comprise:
One support plate；
One peel ply, is configured at the wherein one side of this support plate；
One bonding layer, is configured at the wherein one side of this peel ply and away from this support plate；And
Semiconductor wafer, is configured at the wherein one side of this bonding layer and away from this peel ply；
Wherein, with this support plate of radium-shine light irradiation, the operation of this laser light has a suction in this peel ply
Receive length, the thickness of this peel ply is more than 0.2 times this absorption length and is less than 1 times this absorption
Length, and an absorbed power of this peel ply is between 10,000cm-1To 100,000cm-1Between, should
One absorbed power of bonding layer is less than 8,000cm-1.
8. be used for as claimed in claim 7 the crystal circle structure of radium-shine lift-off processing it is characterised in that
The material of this peel ply is selected from polycarbonate, polyimides, photo resistance, carbon-based polymer, poly- different
Pentadiene rubber, fluosite, epoxy resin, carbon-base film, Graphene, silicon nitride film, silicon fiml,
One of them of hydrogenated amorphous silicon film, microcrystalline sillicon film and above-mentioned any combination.
9. be used for as claimed in claim 7 the crystal circle structure of radium-shine lift-off processing it is characterised in that
The material of this bonding layer is selected from epoxy resin, PET, cyclic olefin polymer, silicon
One of them of based polyalcohol, polyamides methylamine and above-mentioned any combination.
10. be used for as claimed in claim 7 the crystal circle structure of radium-shine lift-off processing it is characterised in that
The optical wavelength range of this laser light is between 193nm to 400nm.
11. crystal circle structures being used for as claimed in claim 7 radium-shine lift-off processing it is characterised in that
The optical wavelength range of this laser light is between 248nm to 360nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510390261.3A CN106340439A (en) | 2015-07-06 | 2015-07-06 | Wafer structure for laser de-bonding processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510390261.3A CN106340439A (en) | 2015-07-06 | 2015-07-06 | Wafer structure for laser de-bonding processing |
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| Publication Number | Publication Date |
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| CN106340439A true CN106340439A (en) | 2017-01-18 |
Family
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| CN201510390261.3A Pending CN106340439A (en) | 2015-07-06 | 2015-07-06 | Wafer structure for laser de-bonding processing |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110590382A (en) * | 2019-10-16 | 2019-12-20 | 林宗立 | Method for sintering ceramic material by double lasers and sintering equipment thereof |
| CN111129356A (en) * | 2018-11-01 | 2020-05-08 | 陕西坤同半导体科技有限公司 | Method for preparing flexible substrate, flexible substrate and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1998071A (en) * | 2004-06-01 | 2007-07-11 | 米歇尔·布吕埃尔 | Method for producing a multilayer structure comprising a separating layer |
| CN101070454A (en) * | 2006-05-12 | 2007-11-14 | 日东电工株式会社 | Pressure-sensitive adhesive sheet for processing semiconductor wafer or semiconductor substrate |
| CN101599418A (en) * | 2008-06-02 | 2009-12-09 | 联胜光电股份有限公司 | Laser-stripping method |
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2015
- 2015-07-06 CN CN201510390261.3A patent/CN106340439A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1998071A (en) * | 2004-06-01 | 2007-07-11 | 米歇尔·布吕埃尔 | Method for producing a multilayer structure comprising a separating layer |
| CN101070454A (en) * | 2006-05-12 | 2007-11-14 | 日东电工株式会社 | Pressure-sensitive adhesive sheet for processing semiconductor wafer or semiconductor substrate |
| CN101599418A (en) * | 2008-06-02 | 2009-12-09 | 联胜光电股份有限公司 | Laser-stripping method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129356A (en) * | 2018-11-01 | 2020-05-08 | 陕西坤同半导体科技有限公司 | Method for preparing flexible substrate, flexible substrate and display device |
| CN110590382A (en) * | 2019-10-16 | 2019-12-20 | 林宗立 | Method for sintering ceramic material by double lasers and sintering equipment thereof |
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Application publication date: 20170118 |