CN106338522B - A kind of high-temperature superconductor band surface defect quality control method and detection system - Google Patents
A kind of high-temperature superconductor band surface defect quality control method and detection system Download PDFInfo
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- CN106338522B CN106338522B CN201610803881.XA CN201610803881A CN106338522B CN 106338522 B CN106338522 B CN 106338522B CN 201610803881 A CN201610803881 A CN 201610803881A CN 106338522 B CN106338522 B CN 106338522B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
- G01N2021/8861—Determining coordinates of flaws
- G01N2021/8864—Mapping zones of defects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
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Abstract
The invention discloses a kind of high-temperature superconductor band surface defect quality control method and high-temperature superconductor band surface defects detection systems.The present invention is by calculating quality control index of the defect to the electric current obstruction rate of high-temperature superconductor band as high-temperature superconductor band, to judge whether high-temperature superconductor band is qualified or is classified high-temperature superconductor band, influence of the defect to high-temperature superconductor band performance can be more accurately reflected, so that judging result is more accurate.To avoid also can avoid qualified product abandonment that underproof product to be allowed to enter next process, reduces production cost, improves product yield.
Description
Technical field
The present invention relates to the production technical fields of high-temperature superconductor band, specifically, being a kind of in production hts band
For the system for detecting high-temperature superconductor band surface defect when material, and according to the defect on high-temperature superconductor band surface to product into
The method of row Quality Control.
Background technique
Superconductor has the characteristics that complete zero resistance and perfect diamganetism at low temperature.Its without hindrance, diamagnetic characteristic is in work
The huge applications prospect in the fields such as industry, national defence, scientific research, medicine makes national governments' all extremely exploitations of attention superconductor technology
Research.The superconducting transition temperature of the superconductor found earliest is very low, between a few K to 23K, can only work under liquid helium.
The temperature for maintaining liquid helium is to need very high cost, and tellurian helium content is very low, and liquid helium can not on a large scale
Using.Although therefore low temperature superconducting material has discovered that application industrially seldom, is mainly applied nearly 100 years
In MRI(Magnetic Resonance Imaging, magnetic resonance imaging) kicker magnet on.The high temperature of liquid nitrogen temperature in 1986 is super
The discovery for leading material changes this case, and high temperature superconducting materia can be applied under liquid nitrogen, and the cost of liquid nitrogen is extremely low, and
And be gas most on the earth, so that the large-scale application of superconductor industrially has possibility.
The high-temperature superconductor band developed earliest is first generation Bi-based high-temperature superconductive strip, and the technique of generation band compares
It being easier to, yield is high, but later, it has been found that generation band has the intrinsic defect for being difficult to overcome.For first generation bismuth system height
Temperature superconductive band has as the second-generation high-temperature superconductor of coating using yttrium system high-temperature superconducting material and is higher by facing for two orders of magnitude
The advantages such as current-carrying capability, high mechanical strength and low cost potential under boundary's current density, excellent magnetic field, thus be most industry
The superconductor of change prospect.The current-carrying capability for the hyperconductive cable being made from it is 5-10 times of present copper cable, by its coiling
Large-size machine volume weight can be reduced into original 1/4, the kicker magnet of production can longtime running without loss, it is super using it
The superconductive current limiter for leading conversion characteristic can break through the limit of existing power technology.U.S. Department of Energy thinks that high temperature superconductor technology is 21
The unique high-tech deposit of century power industry, have broad application prospects with huge market potential, will exist in this century
Many key areas such as smart grid, the energy, war industry, medical treatment, traffic and scientific research, bring revolutionary impact.Through
The product development for spending the more than ten years has had company to start to marketspace provider industry band.It two generation high-temperature superconductor bands and its answers
With forming an emerging industry.
One key of two generations high-temperature superconductor band industrialization is to improve yield.Influence one of band yield it is important because
Element is the defect being present on band.Defect is destroyed superconductivity, and supercurrent can not pass through.
Two generation high-temperature superconductor bands are usually the metal tape that 25-100 microns of thickness are plated film, and width is 10-200 millimeters,
Length is several hundred to several kms.Original metal belt surface is nanoscale finish, and several layers buffering is then plated on sheet metal strip
Layer film, finally depositing one layer is superconducting layer.Various defects, defect may be introduced in band processing and coating process
Supercurrent can be formed and be hindered, influence final product yield.The band of sheet metal strip or plated film is generally wrapped at the beginning of one
On beginning reel, by band transporting system (there is tension force and speed control), continuously through process area (polishing, plating
Film, measurement etc.), after completing process, it is wound on receiving plate, here it is roll-to-roll dynamic treatment process.
It is obvious for establishing the importance of quality control of a set of defect detecting system to coating conductor.Two generation high temperature
Superconducting tape is needed by many road process, and before every one of process, it is desirable to avoid undesirable band
Material enters the process of subsequent valuableness, and strip surface defect is an important quality control index.
The method of defects detection most commonly is manual inspection, and artificial detection has disadvantages that: efficiency is very low, and omission factor is very
Height, and artificial detection resolution ratio is low, will cause many erroneous judgements in this way, as shown in Figure 1, finding 12 mm wides under low resolution
Band 100 has the defect 101 of 2 mm in size, it will usually think that this defect 101 can cause 2/12=17% to supercurrent
Obstruction rate, such belt as waste product, will not can enter subsequent technique processing.But if this is observed under high-resolution
A defect, this seems continuous 2 millimeters of defects 101 under low resolution and is likely to be by many discrete 40-50 microns
What little particle was constituted, most of electric current can be flowed through between little particle, so this defect is not 17% to the obstruction of electric current,
It may be 5%, if the Quality Control threshold value of electric current obstruction rate is set as less than 7%, this root belt is can to enter lower one of technique
Processing.
Second example is an opposite situation, see Fig. 2, and on the band 200, a zero defect is observed under low resolution
Surface.But in fact, observe certain region 201 at high resolutions, there is a large amount of ~ 10 microns of little particle (human eye in discovery
Discernmible smallest particles is 20-40 microns, so manual inspection will be considered that it is defect-free surface), and density is very high, it is right
The obstruction rate of electric current can exceed that 7%, and such band is not can enter subsequent technique to handle.
The american documentation literature of Patent No. US7805173B2 gives to be replaced manually being detected using imaging system
Method, but in their patent, detection system has finally been merely given as the characterization of defect, such as defect area accounting, lacks
Sunken line density, the size of defect, shape, feature etc..The characterization of defect can not teach that defect to superconducting tape electric current
Influence.For example in Fig. 3, we, which take three, has same area accounting, but is different for the defect situation of distribution of particles
It is bright.In fig. 3 a, little particle is uniformly distributed, and such distribution has some obstructions to electric current, and obstruction rate depends on density；In Fig. 3 b
In, little particle is most of to be arranged along band length direction, and such defect distribution is less than Fig. 3 a's to the obstruction rate of electric current
Obstruction rate；In figure 3 c, the most of width direction along belt of little particle arranges, obstruction rate of such distribution to electric current
Then it is higher than the obstruction rate of Fig. 3 a.Same area accounting, but being different influence of the defect shape to electric current can also be very different.Ginseng
As shown in Figure 4, band be 12 mm wides band, defect A be x8 millimeters of 0.1 mm wide it is long be parallel to band length direction
Scratch, defect B are the x3 millimeters long scratch along strip width direction of 0.1 mm wide, and defect A area is the 4 of defect B area
Times, still, the influence very little to electric current, it is 0.1mm/12mm=0.8% that it, which causes the decline of electric current, can be ignored.Defect B by
In along strip width direction, the influence to electric current is 2/12=16%.
So be only the characterization for providing defect defect detecting system actual product quality control in omission factor and mistake
It is very high for sentencing rate, or even is not so good as artificial detection.Just very useful on-line automatic defect detecting system should provide defect
To the obstruction rate of electric current.This is the key that the defect detecting system for high-temperature superconductor band as reliable Quality Control place.
Summary of the invention
The technical problem to be solved by the present invention is to a kind of identifications accurately, the high-temperature superconductor that recognition speed is fast, recognition efficiency is high
Strip surface defect detecting system, and the method that Quality Control is carried out to product according to the defect on high-temperature superconductor band surface.
In order to solve the above-mentioned technical problems, the present invention provides a kind of high-temperature superconductor band surface defect quality control methods, lead to
The surface defect for calculating high-temperature superconductor band is crossed to the obstruction rate of electric current as quality control index.
Further, by numerical value calculation or simulation method obtain it is defective in the presence of the high-temperature superconductor band
Current distribution, and calculate according to current distribution obstruction rate of the surface defect to electric current of the high-temperature superconductor band.
Further, the numerical value calculation or simulation algorithm includes limited element analysis technique and finite difference calculus.
Further, for Current continuity equation ▽ J(x, y)=0, wherein J is the governing equation of the limited element analysis technique
High-temperature superconductor band surface coordinate is the current density vectors of the point of (x, y)；Boundary condition is the boundary and band in defect
On boundary, the normal component Jn of electric current is 0, and the tangential component Jt of electric current is constant.
Further, the defect is calculated to the method for the obstruction rate of electric current are as follows: by the defect in high-temperature superconductor band
Projection in width direction obtains defect to the obstruction rate of electric current divided by the high-temperature superconductor band width.
Further, high-temperature superconductor band is divided into multiple slices in the longitudinal direction, will be fallen on same slice
Projected length the sum of of each defect in high-temperature superconductor band width direction, it is wide in band to subtract each defect in same slice
The lap of projection on degree direction obtains defect to the obstruction rate of electric current then divided by the high-temperature superconductor band width.
Further, when there are when multiple defects, judge to be between multiple defects on high-temperature superconductor band length direction
It is no exist it is relevant, and if it exists, by the multiple defect recognition be a defect.
Further, judge between multiple defects with the presence or absence of relevant method are as follows: the size expansion one of defect is concerned with
Distance L, whether the defect after judging extension is Chong Die with the generation of other defects, if so, being judged as between the defect for generating overlapping
In the presence of relevant.
Further, the method specifically includes:
A, the image on high-temperature superconductor band surface is obtained by imaging device, and identifies lacking for high-temperature superconductor band surface
It falls into.
B, the defect is calculated to the obstruction rate of electric current；
C, the quality of this section of high-temperature superconductor band is judged to the obstruction rate of electric current according to the defect.
The present invention also provides a kind of high-temperature superconductor band surface defects detection systems, comprising:
Lighting device, for being irradiated to high-temperature superconductor band surface, illumination needed for Image Acquisition is provided；
Imaging device, for acquiring the image information on high-temperature superconductor band surface；
Analyzer-controller calculates institute for identifying the defect on high-temperature superconductor band surface according to described image information
Defect is stated to the obstruction rate of electric current, and using the defect to the obstruction rate of electric current as the quality control index of high-temperature superconductor band.
Further, the lighting device is dark-ground illumination device.
Further, at least part of the lighting device, high-temperature superconductor band and imaging device is placed in magazine.
Further, further include having illumination intensity probe, be used for monitoring, illumination light intensity, provide feedback to the illumination system
System, adjustment illumination intensity are allowed to keep stablizing.
Further, after the analyzer-controller calculates defect to the obstruction rate of electric current, electric current obstruction rate and correspondence
High-temperature superconductor band position store to testing result file, and show electric current obstruction rate-strip location on computers
Figure, for the quality of user's quick interpretation high-temperature superconductor band.
Further, the analyzer-controller includes:
Classifcation of flaws module, for identification defect type on high-temperature superconductor band surface out；
Mark module, for different types of defect to be drawn in electric current obstruction rate-band with different colors and icon mark
In material coordinate diagram；
Memory module, for the Classifcation of flaws module cannot to be identified as to the defect of existing defect type, scarce
Sunken image is run after fame with band coordinate to be stored, and the possible artificial concrete analysis for future is classified.
Further, the analyzer-controller further includes that module is concluded in study, and the study is concluded module and used for receiving
A certain number of same class defects that family provides, summarize the feature of such defect, and the feature of such defect is exported to institute
State Classifcation of flaws module.
The present invention calculates defect and hinders the electric current of high-temperature superconductor band according to the defect size, shape and distribution identified
Hinder rate, using defect to the electric current obstruction rate of high-temperature superconductor band as the quality control index of high-temperature superconductor band.It can be more accurately
Influence of the defect to high-temperature superconductor band performance is reflected, so that judging result is more accurate.To avoid qualified product
It is discarded, it also can avoid that underproof product is allowed to enter next process, reduce production cost, improve product yield.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of defect on high-temperature superconductor band.
Fig. 2 is the schematic diagram of another defect on high-temperature superconductor band.
Fig. 3 is three kinds of microcosmic comparison diagrams with area gross imperfection on high-temperature superconductor band.
Fig. 4 be on high-temperature superconductor band number of drawbacks to the schematic diagram of super electric current influence factor.
Fig. 5 is the method schematic diagram for dividing slice in the present invention to high-temperature superconductor band.
Fig. 6 is the structural schematic diagram of high-temperature superconductor band surface defects detection system.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and specific embodiments, so that those skilled in the art can
It to better understand the invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
The present invention calculates defect and hinders the electric current of high-temperature superconductor band according to the defect size, shape and distribution identified
Hinder rate, using defect to the electric current obstruction rate of high-temperature superconductor band as the quality control index of high-temperature superconductor band.The present invention specifically mentions
For two class defects to the algorithm of electric current obstruction rate, one kind is microtomy, and image is divided into multiple cut on band length direction
Piece, will fall in the sum of the projection on strip width direction of the defects of same slice divided by the high-temperature superconductor band width,
Defect is obtained in this break area to the obstruction rate of electric current.This method quickly and easily calculates obstruction rate, can also deal with life
The most defect scenes encountered in production are suitble to high speed flaw detection system.Another method can be precisely calculated and take the post as
The obstruction rate to electric current under what defect situation.This method be obtained by numerical value calculation or simulation it is accurate defective existing
In the case of current distribution, and electric current obstruction rate is calculated according to current distribution.The benefit of this method is can to accurately calculate to take the post as
Electric current obstruction rate under what defect scene, the disadvantage is that calculating complexity, the time needed is longer, is not suitable for high-speed detection system, or
When being used for high-speed detection system, real-time electric current obstruction rate cannot be done and calculated, need defect image to store, for after
Calculating current obstruction rate.
When calculating influence of the defect to electric current, it is calculated for discrete point defect (such as Fig. 4 total defect distribution F)
Influence to electric current is very simple, because they are equivalent to single scattered points to the obstruction of electric current, each defect pair to the obstruction of electric current
The obstruction rate of electric current is equal to projected length of the defect in strip width divided by strip width, this is because electric current dissipates around one
After point, before encountering next scatterplot, Uniform Flow is restored again, has been equivalent to electric current and only encounters a scatterplot every time
Defect, that is to say, that do not have coherence between two scatterplots.But if defect along band width direction arrangement (such as defect
It is distributed D), electric current can encounter these defects simultaneously, so it is along band that scatterplot defect distribution, which forms obstruction rate to electric current, in this way
The sum of long band of projection of the scatterplot defect of width direction arrangement in strip width direction, divided by the width of band.If defect exists
The projection in strip width direction has overlapping, it is necessary to subtract the part of overlapping.
If scatterplot defect is leaned on close, the group of being polymerized to (such as defect distribution E), then electric current is after around defect,
There are no Uniform Flow is restored, just encounter other defect again, such defect be it is relevant, electric current is between relevant defect
Region flowing also will receive serious obstruction.Electric current is the function of distance between them from the percent of pass passed through between them.I
Define the coherence length L that distance between defect when percent of pass is 25% is defect.The general very little of coherence length, to big defect
Obstruction rate calculating influence it is little, but need to consider when calculating the obstruction of a large amount of little particle to electric current.
According to above-mentioned consideration, calculating defect in a present invention is given below, supercurrent obstruction rate simplicity is calculated quickly fastly
Method --- microtomy, specific implementation step are as follows:
1. control band continues through imaging system by the band transporting system of band；
2. the image of imaging system acquisition strip surface；
3. identifying all defect of image by following two methods:
A) grey relevant dynamic matrix: the region of the gray threshold of had more than setting is identified as defect
B) gray scale is mutated method: the derivative of gray scale is more than the edge at given threshold being considered as defect.
User can select one of them defect identification method according to the actual situation, can also be come simultaneously using two methods
Identify defect.
It when there are multiple defects, needs to judge between multiple defects with the presence or absence of relevant, and if it exists, lacked the multiple
It falls into and is identified as a defect, to obtain more accurate electric current obstruction rate.Specific embodiment first is that, judge between multiple defects
With the presence or absence of relevant method are as follows: by the one coherence distance L of size expansion of defect, whether the defect after judging extension lacks with other
Generation overlapping is fallen into, is concerned with if so, being judged as and existing between the defect for generating overlapping.When L takes 0, i.e., defect is not expanded
Exhibition.
Image is divided into multiple slices, such as Fig. 5 on band length direction, the defects of same slice will be fallen in band
The sum of projection in material width direction obtains in this break area defect to electric current divided by the high-temperature superconductor band width
Obstruction rate.If the projection in strip width direction of some defects has the part of overlapping, the sum of projection needs to subtract overlapping
Part to avoid computing repeatedly.
When judging that whether a certain defect falls on a certain slice, there are two types of optional methods:
If c) defect has any a part to fall into slice, then it is assumed that this defect falls into this slice；
D) only defective central point is fallen into slice, just thinks that this defect falls into this slice.
Wherein preferred method is method a) method.
The width d of each slice is generally coherence length L or is coherence length L multiplied by a correction coefficient, can basis
The practical obstruction rate and the resulting obstruction rate of calculating of corresponding band are corrected.The width d range of slice is generally arrived at 5 microns
200 microns.
Above-mentioned microtomy embodiment gives calculation method of the easy defect to electric current obstruction rate, calculating speed
Quickly, defect obstruction rate is provided in real time, and good knot can be provided for the defect situation encountered in most actual productions
Fruit.When can be used for high speed (detection speed is greater than 100 ms/h) detection.
But the situation that defects detection is likely encountered is such as the defects of Fig. 4 C1+C2.Defect C1 is oblique scratch,
Its length in the projection y5 in strip width direction is exactly obstruction size of the C1 to electric current, but if there is two oblique scratches
Together, the calculating of obstruction rate, cannot be simply by calculating two oblique trace C1, C2 in strip width with regard to more complicated by C1, C2
The sum of the projection in direction calculates obstruction rate=(y5+y4)/12, because electric current can flow through among C1, C2, obstruction rate
It should be ≈ (12-y1-y3)/12.It is assumed herein that the width of band is 12mm.
Our obstruction rate algorithms given below, can be precisely calculated the obstruction to electric current under any defect situation
Rate.This method be obtained by numerical value calculation or simulation it is accurate it is defective in the presence of current distribution, and according to electricity
Flow distribution calculates electric current obstruction rate.Specific step is as follows:
1. control band continues through imaging system by the band transporting system of band；
2. the image of imaging system acquisition strip surface；
3. identifying all defect of image by following two methods
E) grey relevant dynamic matrix: the region of the gray threshold of had more than setting is identified as defect；
F) gray scale is mutated method: the derivative of gray scale is more than that the place of the threshold value of setting is considered as the edge of defect.
User can select one of them defect identification method according to the actual situation, can also be come simultaneously using two methods
Identify defect.
It is distributed by numerical value calculating/simulation method calculating current, and electric current obstruction rate is calculated according to current distribution.Number
Value calculating/simulation method includes limited element analysis technique.Current distribution continuous in spatial domain on series of discrete region
Current variable substitute.The interaction relationship for describing these discrete variables is set up according to superconduction electrodynamics, also cries control
Equation processed.According to the distribution and physical principle of defect, boundary condition is established.Then by establishing equivalent variation, pass through computer
The minimum value of variation is asked to determine the current distribution in each finite element, to calculate defect to the obstruction rate of supercurrent.
As a preferred embodiment, governing equation is the continuity equation of electric current, ▽ J(x, y)=0 wherein J(x, y) be
High-temperature superconductor band surface coordinate is the current density vectors of the point of (x, y).
As a preferred embodiment, boundary condition are as follows:
A) on the boundary of defect and the boundary of band, the normal component Jn of electric current is 0, and the tangential component Jt of electric current is normal
Amount;
B) electric current of band flows into end edge circle, it is assumed that electric current is that the Uniform Flow along strip width direction (direction x) is normal
Number Jx=J0, Jy=0.
Calculated to simplify, introduce scalar field an a(x, y), instead of current density vectors field J(x, y), define J=▽
A constitutes Laplace's equation Δ a=0.
Be the Fem Computer numerical algorithm of Laplace's equation by the governing equation of standard, calculate obtain have it is scarce
Supercurrent distribution in the presence of falling into.
Find out the maximum current density value Jmax in calculated current distribution.Not due to current density maximum in superconduction
Can exceed that the critical current Jc of superconductor, simultaneously because governing equation and boundary condition are all linear, it is possible to enable Jmax=
Jc.Electric current obstruction rate=(Jmax-J0)/Jmax.
The method of this numerical simulation is adapted to any defect distribution situation, and precision is also higher than microtomy, but counts
Calculation amount is big, can be used for detecting slow-footed defect detecting system, or do processed offline.
It summarizes:
The present invention is by calculating defect to the electric current obstruction rate of high-temperature superconductor band, to judge the matter of high-temperature superconductor band
Amount, can more accurately reflect influence of the defect to high-temperature superconductor band performance, so that judging result is more accurate.One
Aspect so that with the biggish defect of actual influence high-temperature superconductor band will not enter subsequent processing, reduce subsequent handling at
This waste；On the other hand, the present invention but also have appears larger but the hts band of defect that actual influence is little
Material will not be dropped, and equally reduce the waste of material.
The present invention further includes high-temperature superconductor band surface defects detection system other than above-mentioned quality control method, this inspection
Examining system is as shown in Figure 6, comprising:
Lighting device 603 provides needed for Image Acquisition for being irradiated to 600 surface of high-temperature superconductor band
Illumination；
Imaging device 602, for acquiring the image information on 600 surface of high-temperature superconductor band；
Analyzer-controller (not shown), for identifying 600 surface of high-temperature superconductor band according to described image information
Defect, calculate the defect to the obstruction rate of electric current, and using the defect to the obstruction rate of electric current as hts band
The quality control index of material.Wherein, the quality control index is the reference standard to product quality grade.It can be by detection defect to electricity
High-temperature superconductor band is set to qualified products and substandard product by the obstruction rate of stream；Or according to defect to the obstruction rate of electric current
Product is classified.
Preferably, the lighting device is dark-ground illumination device.The lighting device 603 and the imaging device 602
At least camera lens is partially disposed in magazine 601, and the magazine 601 is equipped with the channel of high-temperature superconductor band 600.When detection, high temperature
Superconducting tape 600 is passed through from the channel, so that detection system be made to be located at the part in magazine 601 to high-temperature superconductor band 600
It is detected.Lighting device 603 and imaging device 602 are placed in magazine 601, reduce the reflected light of ambient and lighting device
Caused by interference of the diffusing reflection to imaging device, help to improve the signal-to-noise ratio of imaging, this to improve to small and minor defect
Detectivity it is critically important.
In addition, lighting device 603 uses dark-ground illumination, reflected light is avoided to enter imaging device 602.Specifically, imaging dress
602 optical axis is set perpendicular to 600 surface of high-temperature superconductor band, light 604 and the height that the lighting device 602 issues
The surface of temperature superconductive band 600 is at an angle, and it is described which enter the light 605 of high-temperature superconductor band surface reflection will not
The camera lens of imaging device 602.
Lighting device 603 preferably uses annular light source, such as the LED illumination lamp of high stability high life.Because it is various not
Same defect type is different to the scattering light 606 of different incidence angles (angle for being defined as incident light and strip surface), in order to
A variety of different defects are enough detected, optimal case is the incidence angle comprising all angles, but is the largest incidence angle and designs and to protect
Card is still that dark-ground illumination namely reflected light not can enter camera.The resolution ratio of imaging system will permit in cost and processing time
Perhaps high as far as possible in the range of, generally to reach 15 microns of defect particles resolution ratio, it is contemplated that the reliable recognition of defect and
The resolution ratio of smear caused by ribbon motion, camera will reach 5 microns.Parameter threshold (the ash of the adjustable defect recognition of user
Degree, contrast etc.).
Preferably, detection system of the invention further includes having illumination intensity probe, is used for monitoring, illumination light intensity, provides feedback
To the lighting system, adjusts illumination intensity and be allowed to keep stablizing.
After imaging device obtains image, according to the defect identification method that user selects, defect is identified, then with numerical value meter
The method or simple and quick microtomy for calculating simulation, calculate defect to the obstruction rate of electric current, then electric current obstruction rate and right
The strip location answered is stored to testing result file, and shows electric current obstruction rate-strip location figure on computers, for
Whether this root belt is quality product, secondary quality product, qualifying product or substandard products to the quick interpretation in family.If electric current obstruction rate has been more than that user sets
Fixed threshold value, needing defect image to run after fame with band coordinate stores, for the possible artificial concrete analysis in future.
Specifically, the analyzer-controller includes:
Classifcation of flaws module, for identification defect type on high-temperature superconductor band surface out；
Mark module, for different types of defect to be drawn in electric current obstruction rate-band with different colors and icon mark
In material coordinate diagram；
Memory module, for the Classifcation of flaws module cannot to be identified as to the defect of existing defect type, scarce
Sunken image is run after fame with band coordinate to be stored, and the possible artificial concrete analysis for future is classified.
System software can be further equipped with Classifcation of flaws function, can recognize that different defect classifications, such as
Waterlogging spot, gregarious little particle, finger-marks, scratch, oil line, fiber filament etc., different types of defect is with different color and figure
Mark mark is drawn in electric current obstruction rate-band coordinate diagram.To the defect that cannot be identified as existing defect type, system is needed scarce
Sunken image is run after fame with band coordinate to be stored, and the possible artificial concrete analysis for future is classified, and sums up defect type spy
Sign, is supplied to software.
System software can be further equipped with defect type feature learning and conclude function, when user's offer is a certain number of same
After a kind of defect is to system, software can automatic sorting go out the feature of this kind of defect.
Specifically, the analyzer-controller further includes that module is concluded in study, and the study concludes module for receiving user
The a certain number of same class defects provided, summarize the feature of such defect, and the feature of such defect is exported to described
Classifcation of flaws module.
Illustratively illustrate the present invention with specific embodiment below.
The product to be detected is high-temperature superconductor band, is the metal tape of plated film, 12 millimeters wide, 50-100 microns thick, long
100-3500 meters, band is wrapped on an initial reel, by band transporting system (having tension force and speed control), is passed through
Sample stage, around receiving on reel.Speed is 3.3 cm/s.Left and right drift < 0.5mm when band is mobile, fluctuate up and down <
0.080mm。
Since tape running speed is very low (3.3 cm/s), it is not necessary that use expensive high line-scan digital camera and linear array illumination system
System, so imaging system uses the black and white area array cameras of 510M, resolution ratio 2456*2058, pixel size is 3.45 μm of *
3.45 μm, sensor is 2/3 inch CCD, and data bits is 14 to obtain biggish dynamic range and preferable signal-to-noise ratio,
Using 2/3 inch of image planes size of million grades of industrial lens, visual field 12.5mm*10.5mm, strip surface pattern minimum point
Resolution is about 5 microns, and time for exposure control is controlled smear caused by ribbon motion in 1 microns in 30 microseconds.Defect is known
Other minimum resolution is 12 microns.Defect recognition uses simple grey relevant dynamic matrix, that is, is more than certain gray scale, that is, is identified as
Defect, it is constant that this requires illumination intensity holding to stablize.Defect recognition can also use grey-scale contrast threshold method, such benefit
It is the stabilization for not depending on illumination intensity.System can provide both defect recognition methods, be determined by user according to different application situation,
Or it uses simultaneously.
The lighting system of system is not as shown in fig. 6, using strong light+dark-ground illumination+darkroom light structures, reflected light enters
Camera, defect are shown due to scattering.Using LED circular lamp, in order to improve the sensitivity of measurement, while shortening the time for exposure,
And the smear as caused by band movement is reduced, illumination is not less than 100000Lux, and adjustable.Due to different defect and difference
Defect orientation need the angle of different incident light that could obtain optimal to show intensity, it is best to use it is multiple that there is difference
The annular LED lamp of incidence angle, but the considerations of for cost and installation volume uses two different incidence angles in the present embodiment
Annular LED lamp illuminates, and incidence angle is respectively in 0-10 degree and 50-70 degree.Low angle light source is conducive to identify that band slightly becomes
Shape defect, high angle light source is conducive to identify particle, the defects of depth scratch.Illumination light spectrum generally use white light this is because
The optimal of different defects shows perhaps related with the color of light, while the optimum sensitivity spectrum of general camera is all can
In light-exposed spectrum.Another selection of illumination light be include purple light or ultraviolet light because the light of short wavelength is easier by strip surface
Microparticle scattering, thus improve microparticle detection sensitivity.System is placed in magazine, and magazine absorbs reflected light, reflected light
Caused by diffuse and extraneous stray light does not enter imaging system, light source requirements are steady in a long-term, and light decay is small, there is light intensity probe
(such as photo resistance of 2% precision) detects the drift of light intensity, and controls light intensity regulating and the light intensity of drift is recalled to automatically.
System needs to read band coordinate, position coder of the band coordinate from band transporting system.
After imaging device obtains image, according to the defect identification method that user selects, defect is identified, then with numerical value meter
The method or simple and quick microtomy for calculating simulation, calculate defect to the obstruction rate of electric current, then electric current obstruction rate and right
The strip location answered is stored to testing result file, and shows electric current obstruction rate-strip location figure on computers, for
Whether this root belt is quality product, secondary quality product, qualifying product or substandard products to the quick interpretation in family.If electric current obstruction rate has been more than that user sets
Fixed threshold value, needing defect image to run after fame with band coordinate stores, for the possible artificial concrete analysis in future.
System software can be further equipped with Classifcation of flaws function, can recognize that different defect classifications, such as
Waterlogging spot, gregarious little particle, finger-marks, scratch, oil line, fiber filament etc., different types of defect is with different color and figure
Mark mark is drawn in electric current obstruction rate-band coordinate diagram.To the defect that cannot be identified as existing defect type, system is needed scarce
Sunken image is run after fame with band coordinate to be stored, and the possible artificial concrete analysis for future is classified, and sums up defect type spy
Sign, is supplied to software.
System software can be further equipped with defect type feature learning and conclude function, when user's offer is a certain number of same
After a kind of defect is to system, software can automatic sorting go out the feature of this kind of defect.
Embodiment described above is only to absolutely prove preferred embodiment that is of the invention and being lifted, protection model of the invention
It encloses without being limited thereto.Those skilled in the art's made equivalent substitute or transformation on the basis of the present invention, in the present invention
Protection scope within.Protection scope of the present invention is subject to claims.
Claims (15)
1. a kind of high-temperature superconductor band surface defect quality control method, which is characterized in that the image on high-temperature superconductor band surface is obtained,
And identifying the defect on high-temperature superconductor band surface, the surface defect of calculating high-temperature superconductor band is to the obstruction rate of electric current as matter
Control index；By numerical value calculation or simulation method obtain it is defective in the presence of the high-temperature superconductor band electric current point
Cloth, and calculate according to current distribution obstruction rate of the surface defect to electric current of the high-temperature superconductor band, wherein according to electric current
Distribution calculates the surface defect of the high-temperature superconductor band to the method for the obstruction rate of electric current are as follows: electricity continuous in spatial domain
Flow distribution is substituted with the current variable on series of discrete region, is set up according to superconduction electrodynamics and is described these discrete changes
The interaction relationship of amount establishes boundary condition according to the distribution and physical principle of defect, then by establishing equivalent variation,
Minimum value by asking variation determines the current distribution in each finite element, to calculate defect to the obstruction rate of supercurrent.
2. high-temperature superconductor band surface defect quality control method according to claim 1, which is characterized in that pass through imaging device
Obtain the image on high-temperature superconductor band surface.
3. high-temperature superconductor band surface defect quality control method according to claim 1, which is characterized in that the numerical value calculates
Or analogy method includes limited element analysis technique and finite difference calculus.
4. high-temperature superconductor band surface defect quality control method according to claim 1, which is characterized in that the finite element fraction
The governing equation of analysis method is Current continuity equation ▽ J(x, y)=0 wherein J(x, y) it is that high-temperature superconductor band surface coordinate is
The current density vectors of the point of (x, y)；Boundary condition is the normal component Jn of electric current on the boundary of defect and the boundary of band
It is 0, the tangential component Jt of electric current is constant.
5. a kind of high-temperature superconductor band surface defect quality control method, which is characterized in that the image on high-temperature superconductor band surface is obtained,
And identifying the defect on high-temperature superconductor band surface, the surface defect of calculating high-temperature superconductor band is to the obstruction rate of electric current as matter
Control index, wherein calculate the defect to the method for the obstruction rate of electric current are as follows: divide high-temperature superconductor band in the longitudinal direction
For multiple slices, the width d of each slice is coherence length L or is coherence length L multiplied by correction coefficient, will fall in same slice
On projected length the sum of of each defect in high-temperature superconductor band width direction, subtract in same slice each defect in band
The lap of projection in material width direction obtains resistance of the defect to electric current then divided by the high-temperature superconductor band width
Hinder rate, wherein electric current from the percent of pass passed through between defect be 25% when defect between distance be defect coherence length L.
6. high-temperature superconductor band surface defect quality control method as claimed in claim 5, which is characterized in that when in hts band
There are when multiple defects, judge between multiple defects with the presence or absence of relevant on material length direction, and if it exists, by the multiple defect
It is identified as a defect.
7. high-temperature superconductor band surface defect quality control method as claimed in claim 6, which is characterized in that judge multiple defects it
Between with the presence or absence of relevant method are as follows: by the one coherence length L of size expansion of defect, defect after judging extension whether with it is other
Defect generates overlapping, if so, being judged as between the defect for generating overlapping in the presence of relevant.
8. high-temperature superconductor band surface defect quality control method as claimed in claim 5, which is characterized in that obtained by imaging device
Obtain the image on high-temperature superconductor band surface.
9. a kind of high-temperature superconductor band surface defects detection system characterized by comprising
Lighting device, for being irradiated to high-temperature superconductor band surface, illumination needed for Image Acquisition is provided；
Imaging device, for acquiring the image information on high-temperature superconductor band surface；
Analyzer-controller calculates described lack for identifying the defect on high-temperature superconductor band surface according to described image information
Fall into the obstruction rate of electric current, and using the defect to the obstruction rate of electric current as the quality control index of high-temperature superconductor band,
Wherein, calculate the defect to the obstruction rate of electric current by numerical value calculation or simulation method obtain it is defective there are the case where
Under the high-temperature superconductor band current distribution, and calculate according to current distribution the surface defect pair of the high-temperature superconductor band
The obstruction rate of electric current calculates the surface defect of the high-temperature superconductor band to the method for the obstruction rate of electric current according to current distribution
Are as follows: current distribution continuous in spatial domain is substituted with the current variable on series of discrete region, according to superconduction electric power
Learn set up describe these discrete variables interaction relationship boundary condition is established according to the distribution and physical principle of defect,
Then it by establishing equivalent variation, by asking the minimum value of variation to determine the current distribution in each finite element, is lacked to calculate
Fall into the obstruction rate to supercurrent；Or
The defect is calculated to the method for the obstruction rate of electric current are as follows: high-temperature superconductor band is divided into multiple cut in the longitudinal direction
Piece, the width d of each slice is coherence length L or is coherence length L multiplied by correction coefficient, each on same slice by falling in
Projected length the sum of of the defect in high-temperature superconductor band width direction subtracts in same slice each defect in strip width side
The lap of upward projection obtains defect to the obstruction rate of electric current then divided by the high-temperature superconductor band width,
In, electric current from the percent of pass passed through between defect be 25% when defect between distance be defect coherence length L.
10. high-temperature superconductor band surface defects detection system as claimed in claim 9, which is characterized in that the lighting device
For dark-ground illumination device.
11. high-temperature superconductor band surface defects detection system as claimed in claim 9, which is characterized in that the lighting device,
At least part of high-temperature superconductor band and imaging device is placed in magazine.
12. high-temperature superconductor band surface defects detection system as claimed in claim 9, which is characterized in that further include having illumination
Light intensity probe, is used for monitoring, illumination light intensity, provides feedback to the lighting device, and adjustment illumination intensity is allowed to keep stablizing.
13. high-temperature superconductor band surface defects detection system as claimed in claim 9, which is characterized in that the analysis and Control
After device calculates defect to the obstruction rate of electric current, electric current obstruction rate and the storage of corresponding high-temperature superconductor band position are tied to detection
Fruit file, and electric current obstruction rate-strip location figure is shown on computers, for user's quick interpretation high-temperature superconductor band
Quality.
14. high-temperature superconductor band surface defects detection system as claimed in claim 9, which is characterized in that the analysis and Control
Device includes:
Classifcation of flaws module, for identification defect type on high-temperature superconductor band surface out；
Mark module is sat for different types of defect to be drawn in electric current obstruction rate-band with different colors and icon mark
On marking on a map；
Memory module, for the Classifcation of flaws module cannot be identified as existing defect type defect image with band
Material coordinate, which is run after fame, to be stored, and the artificial concrete analysis for future is classified.
15. high-temperature superconductor band surface defects detection system as claimed in claim 14, which is characterized in that the analysis and Control
Device further includes that module is concluded in study, and a certain number of same class defects that module is used to receive user's offer are concluded in the study,
The feature of such defect is summarized, and the feature of such defect is exported to the Classifcation of flaws module.
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| CN113325067A (en) * | 2021-05-31 | 2021-08-31 | 云南电网有限责任公司电力科学研究院 | Superconducting tape defect positioning system and method |
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