CN106324996A - Photoetching machine in-situ multichannel imaging quality detection apparatus and photoetching machine in-situ multichannel imaging quality detection method - Google Patents
Photoetching machine in-situ multichannel imaging quality detection apparatus and photoetching machine in-situ multichannel imaging quality detection method Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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Abstract
The invention relates to a photoetching machine in-situ multichannel imaging quality detection apparatus and a photoetching machine in-situ multichannel imaging quality detection method, wherein the photoetching machine in-situ multichannel imaging quality detection apparatus comprises a photoetching machine light source, an illumination system, a mask table, a projection object lens, a work-piece table and a computer, and further comprises an object surface grating plate and a wavefront aberration sensor. According to the present invention, the photoetching machine imaging qualities such as the wavefront aberration, the distortion and the field curvature are detected by using the photoetching machine in-situ multichannel imaging quality detection apparatus so as to improve the parallel channel number and the detection speed of the imaging quality detection.
Description
Technical field
The present invention relates to litho machine, particularly a kind of litho machine multi channel imaging quality detection device and method in situ.
Background technology
Litho machine is one of nucleus equipment of great scale integrated circuit manufacture.Projection objective is that litho machine is most important
One of subsystem.The image quality of projection objective is one of key factor determining photoetching line quality.Along with photoetching
Node develops below 1x nm resolution, it is desirable to productivity reaches 250wph.The raising of productivity causes mask aligner mask
Heat effect and projection objective thermal aberration, affect litho machine alignment precision and projection objective image quality.Requirement can be real
Time measure the distortion of etching system, the curvature of field and wave aberration.
General litho machine uses different sensor detection distortion, the curvature of field and wave aberration parameters.Distortion and curvature of field parameter
By litho machine, the scanning of Barebone is realized；Wave aberration uses wave aberration sensor in situ to realize, real by scanning
Existing full filed wave aberration detection.ASML company of Holland reports a kind of multichannel picture element sensor (with reference in first skill
Art [1], Wim de Boeij, Remi Pieternella, et al., Extending immersion lithography down to
1x nm production nodes.Proc.of SPIE Vol.8683,86831L (2013)), instead of original TIS
Coaxial alignment and the primary aberration such as distortion, curvature of field detection function, be capable of 7 visual field points of photoetching projection objective lens simultaneously
The parallel detection of wave aberration, Wave-front measurement result extends to Z2～Z64Zernike system from Z5～Z37Zernike coefficient
Number.
But, owing to detector pixel is limited, the wave aberration of 7 visual field points of detection necessarily causes each visual field point simultaneously
The effectively reduction of detected pixel number, (detects to Z64Zernike on the premise of ensureing wave aberration detection spatial resolution
Coefficient), it is difficult to improve detection parallel channel number.And improve detection parallel channel number and can improve distortion, curvature of field inspection
Survey precision, improve the accuracy of heat effect prediction.
On the other hand, in situ imaging quality testing speed is the key factor affecting litho machine productivity, improves and becomes in situ
As quality testing speed is also the importance that in situ imaging quality detection sensor improves.
Summary of the invention
It is an object of the invention to provide a kind of litho machine multi channel imaging quality detection device and method in situ, with soon
The wave aberration of speed ground in situ detection projection lens of lithography machine and distortion, the curvature of field.
The technical solution of the present invention is as follows:
A kind of litho machine multi channel imaging quality detection device in situ, this device includes the light source of litho machine, illumination system
System, mask platform, projection objective, work stage and computer, its feature is, also includes object plane original screen panel and ripple picture
Gap sensor；Described object plane original screen panel is placed in mask platform, and described wave aberration sensor is placed in work stage, institute
The wave aberration sensor stated is connected with computer；
Described object plane original screen panel is made up of the object plane grating that n group dutycycle is 50%；Often group object plane grating includes light
Grid line the first grating in the y-direction and grid stroke the second grating in the x-direction, the cycle is PoX；
Image planes original screen panel that described wave aberration sensor includes being sequentially placed along direction of beam propagation, array of orifices and
Two-dimension photoelectric sensor；
Described image planes original screen panel includes the image planes grating of n group dutycycle 50%, and the cycle is PiX；
The first described grating and the cycle P of the second gratingoXCycle P with described image planes gratingiXMeet such as ShiShimonoseki
System；
PoX=PiX·M
Wherein, M is the imaging amplification of projection lens of lithography machine (5), PiXBy shear rate sX, optical source wavelength λ and
Numerical aperture NA of projection lens of lithography machine determines:
Spacing d between object plane grating is often organized on described object plane original screen paneloEach image planes grating with on image planes original screen panel
Between spacing diMeet following relation:
The spacing between the first grating of object plane grating and the second grating is often organized equal, object plane grating on object plane original screen panel
Group number equal with the number of image planes grating, being all n, described n is the natural number more than 1.
The first described grating and the second grating are the one-dimensional reflective gratings or of phase grating or amplitude grating type
Dimension transmission-type grating.
The cycle of described array of orifices equal to the pixel period of described photoelectric two-dimensional sensor, array of orifices little
Hole site and the location of pixels one_to_one corresponding of described photoelectric two-dimensional sensor, described photoelectric two-dimensional sensor pixel
Size is S with the ratio of the diameter of the aperture of described array of orifices.
Described two-dimension photoelectric sensor is photographing unit, CCD, cmos image sensor, PEEM, or two dimension
Photodetector array.
The described two-dimensional transmission formula grating that image planes grating is phase grating or amplitude grating type.
Utilize the detection method of above-mentioned litho machine multi channel imaging quality detection device in situ, comprise the following steps:
1. described object plane original screen panel is placed in mask platform, regulates mask platform, make the n of described object plane original screen panel
Organize the first grating and be positioned at the true field position of projection lens of lithography machine；
2. the light sent by light source after the adjustment of illuminator, the n group of the object plane original screen panel described in Uniform Illumination
First grating；
3. wave aberration sensor is placed in work stage, regulates work stage, make image planes original screen panel be positioned at litho machine projection
In the image planes of object lens；
4. adjust work stage, make the n group image planes grating the first grating respectively with n group object plane grating throw through litho machine
Shadow object lens imaging is directed at；
5. use phase-shifting technique, the most repeatedly move described work stage, wave aberration described after every time moving
Computer described in the input of sensor acquisition one width lateral shear interferograms, described computer is from the interferogram collected
In be calculated the x direction shearing phase information of some position, n visual field；
6. adjust mask platform, make n group second grating of object plane original screen panel move to the position of n group the first grating respectively,
N group the second grating is respectively aligned to n group image planes grating through projection lens of lithography machine imaging；
7. phase-shifting technique, the most repeatedly travelling workpiece platform are used, wave aberration sensor described after every time moving
Gathering the computer described in a width lateral shear interferograms input, this computer calculates from the interferogram collected
Y direction shearing phase information to some position, n visual field；
8. shearing phase information solution parcel step 5., 7. obtained, respectively obtains projection lens of lithography machine at n
Δ W before the x direction of some position, visual field and the shearing wave in y directionxWith Δ Wy, rebuild before described shearing wave,
Obtain the projection lens of lithography machine wave aberration in some position, n visual field；Ripple from the wave aberration of some position, n visual field
Face tilts the distortion with defocus data calculating projection lens of lithography machine and the curvature of field.
Compared with in first technology, the invention have the advantages that
1) present invention introduces array of orifices in wave aberration sensor, uses array of orifices by image quality inspection in situ
The spatial resolution surveyed improves S2Times, thus effectively reduce the pixel that each passage two-dimension photoelectric sensor uses
Number, improves image quality parallel detection port number, and parallel detection passage maximum can improve S2Times
2) reduction of the pixel count used due to each passage two-dimension photoelectric sensor, reduces data operation quantity, from
And improve detection speed, detection speed maximum can improve S2Times.
3) detected by multichannel so that wave aberration sensor has possessed the picture elements such as detection distortion simultaneously and the curvature of field simultaneously
The ability of parameter.
Accompanying drawing explanation
Fig. 1 litho machine of the present invention multi channel imaging quality detection device structure chart in situ.
Fig. 2 object plane of the present invention original screen panel schematic diagram.
The wave aberration sensor construction schematic diagram of Fig. 3 present invention.
The image planes original screen panel schematic diagram related to of Fig. 4 present invention.
Fig. 5 is equivalent to the detection error without array of orifices.
Fig. 6 is equivalent to add the detection error of array of orifices.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the invention will be further described, but should not limit this with this embodiment
Bright protection domain.
Fig. 1 is the litho machine multi channel imaging quality detection device structure chart in situ of the present invention.Litho machine of the present invention is former
Position multi channel imaging quality detection device includes that the light source 1 of litho machine, illuminator 2, mask platform 4, litho machine are thrown
Shadow object lens 5, work stage 7, also include the object plane original screen panel 3 being placed in mask stage 4 and the ripple being placed in work stage 7
Aberration sensor 6 and the data handling machine 8 being connected with wave aberration sensor 6；The light source 1 of the present embodiment
Wavelength be 193nm；N=14, described object plane original screen panel 3 is 41.52 μm by 14 groups of cycles and dutycycle is
Object plane grating composition (seeing Fig. 2) of 50%, including grid stroke the first grating 3A1～3N1 and grating in the y-direction
Line the second grating 3A2～3N2 in the x-direction；Described image planes original screen panel 601 includes the picture of 14 groups of dutycycles 50%
Concave grating 601A～601N；Image planes grating 601A～601N uses two dimension chessboard grating；Image planes grating 601A～601N
Cycle be 10.38 μm；Object plane grating and image planes grating are transmission-type amplitude grating；Projection lens of lithography machine 5
Numerical aperture be 0.93, the imaging amplification of projection lens of lithography machine 5 is 1/4, and shear rate is 1%；Ripple picture
Gap sensor 6 (seeing Fig. 3) includes image planes original screen panel 601, the array of orifices being sequentially placed along direction of beam propagation
602 and two-dimension photoelectric sensor 603；Two-dimension photoelectric sensor 603 uses CMOS camera, pixel size 5.6 μm
× 5.6 μm, number of pixels 2040 × 1084；The hole diameter of array of orifices 602 is 1.4 μm, uses CMOS phase
Machine pixel size and hole diameter ratio are 4, and the cycle of array of orifices 602 is equal to photoelectric two-dimensional sensor 603
Pixel period 5.6 μm；On image planes grating 601, the spacing between adjacent two-dimensional grating 601X is 1.5mm；Object plane light
On screen 3, the spacing between spacing and adjacent second grating between adjacent first grating is equal, for 6mm；Object plane
The spacing between the first grating 3X1 of object plane grating and the second grating 3X2 is often organized equal, for 3mm on original screen panel 3.
Described object plane original screen panel 3 is all P by 14 groups of cyclesoAnd the object plane grating composition that dutycycle is 50%；Often group
Object plane grating includes grid stroke the first grating 3X1 in the y-direction and grid stroke the second grating 3X2 in the x-direction；
Described X is the numbering often organizing grating, represents with A, B, C ..., N, such as the first light of A group object plane grating
The first grating 3B1 and the second grating 3B2 of grid 3A1 and the second grating 3A2, B group object plane grating；
The first described grating 3X1 and the second grating 3X2 is phase grating or the diffraction grating of amplitude grating type；
The first described grating 3X1 and the second grating 3X2 is reflective gratings or transmission-type grating；
Described wave aberration sensor 6 includes image planes original screen panel 601, the aperture being sequentially placed along direction of beam propagation
Array 602 and two-dimension photoelectric sensor 603；
Described image planes original screen panel 601 (seeing Fig. 4) includes 14 groups, and the cycle is identical and dutycycle is the image planes of 50%
Grating 601X, described X are the numbering often organizing grating, represent with A, B, C etc.；
The described two-dimensional transmission formula grating that image planes grating 601X is chessboard grating type；
Described image planes grating 601X is phase grating or the diffraction grating of amplitude grating type；
The first described object plane grating 3X1 on described object plane original screen panel 3, the cycle P of the second object plane grating 3X2o
Cycle P with described image planes grating 601XiMeet following relation:
Po=PiM,
Wherein, M is the imaging amplification of projection lens of lithography machine 5；PiBy shear rate s, optical source wavelength λ and photoetching
Machine numerical aperture of projection objective NA determines；
Spacing d between object plane grating is often organized on described object plane original screen panel 3oWith often organize picture on image planes original screen panel 601
Spacing d between concave gratingiMeet following relation:
Spacing phase between the first grating 3X1 and the second grating 3X2 of object plane grating on described object plane original screen panel 3
Deng.
In described array of orifices 602, the cycle of aperture is equal to the cycle of pixel on photoelectric two-dimensional sensor 603, little
Hole site and the location of pixels one_to_one corresponding of photoelectric two-dimensional sensor, hole diameter is photoelectric two-dimensional sensor 603 picture
The 1/4 of element size；
Described mask platform 4 is the displacement platform of thing side's light path that object plane original screen panel 3 moves into projection lens of lithography machine 5；
Described work stage 7 is the image space light path that described wave aberration sensor 6 moves into projection lens of lithography machine 5,
And drive the displacement platform that wave aberration sensor 6 moves；
Described two-dimension photoelectric sensor 603 is photographing unit, CCD, cmos image sensor, PEEM, or
2 D photoelectric detector array, its test surface receives image planes grating 601X and generates and carried out by array of orifices 602
The shear interference image that sampling obtains；
Described computer 8 is used for controlling wave aberration detection process, storage measurement data, and to interferogram at
Reason and analysis.
Using the detection method of above-mentioned litho machine multi channel imaging quality detection device in situ, the step of the method is as follows:
(1) object plane original screen panel is placed in mask platform, regulates mask platform, make 14 group of first grating 3X1 be positioned at photoetching
Machine projection objective needs the true field position measured；
(2) light sent by light source is after the adjustment of illuminator, 14 group of first light of Uniform Illumination object plane original screen panel
Grid 3X1；
(3) wave aberration sensor 6 is placed in work stage 7, regulates work stage 7, make image planes original screen panel 601 be positioned at
In the image planes of projection lens of lithography machine 5；
(4) adjust work stage, make 14 groups of image planes grating 601X respectively with the first grating 3X1 of 14 groups of object plane gratings
It is directed at through projection lens of lithography machine imaging；
(5) phase-shifting technique is utilized, the most repeatedly travelling workpiece platform 7, wave aberration sensor 603 after every time moving
Gathering a width lateral shear interferograms, from the interferogram collected, some position, calculated 14 visual fields exists
Shearing phase information on x direction；
(6) adjust mask platform 4, make 14 group of second grating 3X2 of object plane original screen panel move to 14 group of first light respectively
The position of grid 3X1,14 group of second grating 3X2 is through projection lens of lithography machine imaging and 14 groups of pictures
Concave grating 601X is respectively aligned to；
(7) using phase-shifting technique, the most repeatedly travelling workpiece platform 7 measures, and after moving, wave aberration passes every time
Sensor 603 gathers a width lateral shear interferograms, calculated 14 visual fields from the interferogram collected
Point position shearing phase information in y-direction；
(8) the shearing phase information solution parcel obtained in step (5), (7), respectively obtains projection lens of lithography machine and exists
Δ W before the x direction of some position, 14 visual fields and the shearing wave in y directionxWith Δ Wy, will carry out before shearing wave
Rebuild, obtain the projection lens of lithography machine wave aberration in some position, 14 visual fields；From some position, 14 visual fields
The wave tilt of the wave aberration put and defocus data calculate distortion and the curvature of field of projection lens of lithography machine.
The present invention utilizes array of orifices to sample wave aberration, and detection spatial resolution is improve S2Times.Use
The wave aberration (root-mean-square value is 0.0995 λ) of one 256 pixel × 256 pixel emulates.At its difference wavefront
In every 4 pixels average, be equivalently employed without adding array of orifices, obtain the difference wavefront of 64 pixel × 64 pixels,
Being rebuild by difference wavefront, error is shown in Fig. 5, and its error mean square root is 0.0141 λ；Difference to this wave aberration
Wavefront is sampled, and every 4 pixels select a pixel, are equivalent to increase on the detector array of orifices, obtain 64
The difference wavefront of pixel × 64 pixel, rebuilds difference wavefront, and error is shown in Fig. 6, and its root-mean-square value error is
0.0001λ。
The present embodiment demonstrates apparatus of the present invention and method, and projection objective wave aberration detection resolution is improve 16
Times, therefore, the port number maximum of litho machine multi channel imaging quality detection device in situ can improve 16 times, detection
Speed maximum also can improve 16 times.Detected by multichannel so that wave aberration sensor has possessed and detects simultaneously simultaneously
The ability of the picture element parameters such as distortion and the curvature of field.
Claims (6)
1. a litho machine in situ multi channel imaging quality detection device, this device include litho machine light source (1),
Illuminator (2), mask platform (4), projection objective (5), work stage (7) and computer (8), its feature exists
In, also including object plane original screen panel (3) and wave aberration sensor (6), the annexation of above-mentioned each parts is as follows:
Described object plane original screen panel (3) is placed in mask platform (4), and described wave aberration sensor (6) is placed in work
On part platform (7), described wave aberration sensor (6) is connected with computer (8)；
Described object plane original screen panel (3) is made up of the object plane grating that n group dutycycle is 50%；Often group object plane grating bag
Including grid stroke the first grating (3X1) in the y-direction and grid stroke the second grating (3X2) in the x-direction, the cycle is
PoX；Described X is the numbering often organizing grating, with A, B, C ... represent, such as the first light of A group object plane grating
The first grating 3B1 and the second grating 3B2 of grid 3A1 and the second grating 3A2, B group object plane grating；
Image planes original screen panel (601) that described wave aberration sensor (6) includes being sequentially placed along direction of beam propagation,
Array of orifices (602) and two-dimension photoelectric sensor (603)；
Described image planes original screen panel (601) includes the image planes grating (601X) of n group dutycycle 50%, and the cycle is PiX,
Described X is the numbering often organizing grating, with A, B, C ... represent；
Described the first grating (3X1) and the cycle P of the second grating (3X2)oXWith described image planes grating (601X)
Cycle PiXMeet following relation；
PoX=PiX·M
Wherein, M is the imaging amplification of projection lens of lithography machine (5), PiXBy shear rate sX, optical source wavelength λ and
Numerical aperture NA of projection lens of lithography machine determines:
Spacing d between object plane grating is often organized on described object plane original screen panel (3)oWith on image planes original screen panel (601)
Spacing d between each image planes gratingiMeet following relation:
do=diM,
Often organize on object plane original screen panel (3) between first grating (3X1) of object plane grating and the second grating (3X2)
Spacing equal, object plane grating group number equal with the number of image planes grating, being all n, described n is more than 1
Natural number.
Litho machine the most according to claim 1 multi channel imaging quality detection device in situ, it is characterised in that
Described the first grating (3X1) and the second grating (3X2) are the one-dimensional reflective of phase grating or amplitude grating type
Grating or one-dimensional transmission-type grating.
Litho machine the most according to claim 1 multi channel imaging quality detection device in situ, it is characterised in that
The cycle of described array of orifices (602) is equal to the pixel period of described photoelectric two-dimensional sensor (603), little
The aperture position of hole array (602) and the location of pixels one_to_one corresponding of described photoelectric two-dimensional sensor (603),
The diameter of the aperture of described photoelectric two-dimensional sensor (603) pixel size and described array of orifices (602)
Ratio is S.
Litho machine the most according to claim 1 multi channel imaging quality detection device in situ, it is characterised in that
Described two-dimension photoelectric sensor (603) is photographing unit, CCD, cmos image sensor, PEEM, or two
Dimension photodetector array.
Litho machine the most according to claim 1 multi channel imaging quality detection device in situ, it is characterised in that
The described two-dimensional transmission formula grating that image planes grating (601X) is phase grating or amplitude grating type.
6. utilize the inspection of the multi channel imaging quality detection device in situ of the litho machine described in any one of claim 1 to 5
Survey method, it is characterised in that comprise the following steps,
1. described object plane original screen panel (3) is placed in mask platform (4), regulation mask platform (4), makes described thing
The n group the first grating (3X1) of concave grating plate (3) is positioned at the true field position of projection lens of lithography machine (5)
Put；
2. the light sent by light source (1) object plane grating after the adjustment of illuminator (2), described in Uniform Illumination
The n group the first grating (3X1) of plate (3)；
3. wave aberration sensor (6) is placed in work stage (7), regulation work stage (7), makes image planes original screen panel (601)
It is positioned in the image planes of projection lens of lithography machine (5)；
4. adjust work stage (7), make n group image planes grating (601X) respectively with first grating (3X1) of n group object plane grating
It is directed at through projection lens of lithography machine (5) imaging；
5. use phase-shifting technique, the most repeatedly move described work stage (7), ripple picture described after every time moving
Gap sensor (6) gathers the computer described in a width lateral shear interferograms input, and described computer is from gathering
To interferogram in be calculated the x direction shearing phase information of some position, n visual field；
6. adjust mask platform (4), make the n group the second grating (3X2) of object plane original screen panel (3) move to n group respectively
The position of the first grating (3X1), n group the second grating (3X2) is become through projection lens of lithography machine (5)
As being respectively aligned to n group image planes grating (601X)；
7. phase-shifting technique, the most repeatedly travelling workpiece platform (7) are used, wave aberration sensing described after every time moving
Device (6) gathers the computer described in a width lateral shear interferograms input, and this computer is from the interference collected
Figure is calculated the y direction shearing phase information of some position, n visual field；
8. shearing phase information solution parcel step 5., 7. obtained, respectively obtains projection lens of lithography machine (5) at n
Δ W before the x direction of some position, individual visual field and the shearing wave in y directionxWith Δ Wy, carry out before described shearing wave
Rebuild, it is thus achieved that projection lens of lithography machine (5) is in the wave aberration of some position, n visual field；From some position, n visual field
The wave tilt of the wave aberration put and defocus data calculate distortion and the curvature of field of projection lens of lithography machine (5).
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| CN201510325941.7A CN106324996B (en) | 2015-06-15 | 2015-06-15 | Litho machine original position multi channel imaging quality detection device and method |
| PCT/CN2015/088311 WO2016201788A1 (en) | 2015-06-15 | 2015-08-27 | In-situ multichannel imaging quality detection device and method for mask aligner |
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| CN108803248A (en) * | 2018-05-03 | 2018-11-13 | 中国科学院光电研究院 | The on-line measuring device and method of the numerical aperture of projection objective |
| CN109141291A (en) * | 2018-09-25 | 2019-01-04 | 南昌航空大学 | A kind of fast phase unwrapping algorithm |
| WO2019233402A1 (en) * | 2018-06-05 | 2019-12-12 | 上海微电子装备（集团）股份有限公司 | Aberration measurement device and method |
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| CN108803248A (en) * | 2018-05-03 | 2018-11-13 | 中国科学院光电研究院 | The on-line measuring device and method of the numerical aperture of projection objective |
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| WO2019233402A1 (en) * | 2018-06-05 | 2019-12-12 | 上海微电子装备（集团）股份有限公司 | Aberration measurement device and method |
| TWI704432B (en) * | 2018-06-05 | 2020-09-11 | 大陸商上海微電子裝備（集團）股份有限公司 | Aberration measuring device and method |
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| WO2016201788A1 (en) | 2016-12-22 |
| CN106324996B (en) | 2017-10-20 |
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