CN106324649B - 半导体探测器 - Google Patents

半导体探测器 Download PDF

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CN106324649B
CN106324649B CN201610797815.6A CN201610797815A CN106324649B CN 106324649 B CN106324649 B CN 106324649B CN 201610797815 A CN201610797815 A CN 201610797815A CN 106324649 B CN106324649 B CN 106324649B
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cathode
semiconductor detector
semiconductor
radiation
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CN106324649A (zh
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张岚
杜迎帅
李波
吴宗桂
李军
曹雪朋
胡海帆
顾建平
徐光明
刘必成
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Nuctech Co Ltd
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Abstract

公开了一种半导体探测器。根据实施例，该半导体探测器可以包括：半导体探测材料，包括彼此相对的第一侧面和第二侧面，其中，第一侧面和第二侧面之一是接收入射射线的射线入射面；设置于第一侧面上的多个像素阴极；设置于第二侧面上的多个像素阳极，其中，像素阳极与像素阴极彼此一一对应；以及设置于射线入射面上各像素阴极或像素阳极外周的阻挡电极。根据本公开的实施例，可以有效避免像素之间的电荷共享，提高探测器的成像分辨率。

Description

半导体探测器
技术领域
本公开涉及辐射探测中的半导体探测器，具体涉及辐射探测成像中探测器的射线入射方向上的电极设计。
背景技术
半导体探测器以其较高的探测效率、较好的能量分辨率受到广泛的关注，被应用到辐射探测的各项应用中，例如环境辐射检测中的核素识别仪、计量报警仪等；国家安全中的物品检测如物品机、工业计算机断层扫描(CT)；医疗应用中的CT、牙科成像、正电子发射断层扫描(Positron Emssion Tomography，PET)、单光子计算机断层扫描(Single PhotonComputer Tomography，SPECT)等。半导体材料的种类很多，例如CdMnTe(碲锰镉)、HgI2(碘化汞)、TlBr(溴化铊)、PbI2(碘化铅)、GaAs(砷化镓)、Ge(锗)等，它们分别具有不同的特点，被应用到不同的领域。
CdZnTe(碲锌镉，简写CZT)除具有很好的能量分辨率、高的探测效率外，它还能在室温下工作，这使它成为最有潜力的辐射探测材料。利用CZT半导体，设计成像素结构的探测器，能够应用在辐射成像的多个领域，例如牙科CT、SPECT等。
像素结构不仅可以获得良好的能量分辨率，还可以得到相对高的空间分辨率，在天文成像、医学成像等方面应用前景广阔。
像素电极(像素阴极或像素阳极)是一种单极性电荷灵敏技术，它的感应电荷仅由一种载流子的漂移所贡献。不同于平面探测器的均匀电场，像素探测器内部的电场分布是非均匀的。当产生的自由电荷在远离像素电极的区域漂移时，由于该自由电荷被多个像素电极共享，因此在单个像素电极上的感应电荷非常小。只有当自由电荷在像素电极附近漂移时，对应像素电极上的感应电荷才会迅速变化。单个像素电极上的感应电荷几乎全部由电荷在像素电极附近区域的漂移所贡献。对于采用像素阳极的CZT探测器，空穴漂移对像素阳极感应电荷的贡献几乎可以忽略电荷，从而实现了单极性电荷灵敏技术，提高了能谱分辨率。
但是，自由电荷在漂移的过程中会扩散，部分电荷会被相邻的像素所收集，出现电荷分配问题。随着像素尺寸的减小，电荷分配越严重，造成单个像素的能谱分辨率变差。例如，当光子入射的位置在两个相邻像素的中间，那么由入射光子导致的电荷会被这两个相邻的像素收集，两个像素的信号均为错误信号；当光子入射的位置在4个相邻像素中间，那么由入射光子导致的电荷会被这4个相邻的像素收集。实际情况中入射光子的位置是不确定的，其次，各个像素贡献的信号量也是不确定的，因此射线的准确位置是很难确定的。
通过信号符合对电荷共享进行修正，在电路设计中的工作量是十分庞大的，信号修正的效率也不会很高。通过数据采集再进行数据处理，不能够实现信号的实时采集和分析。
发明内容
鉴于上述问题，本公开的目的至少部分地在于提供一种在射线入射方向上具有改进电极结构的半导体探测器。
根据本公开的一个方面，提供了一种半导体探测器，包括：半导体探测材料，包括彼此相对的第一侧面和第二侧面，其中，第一侧面和第二侧面之一是接收入射射线的射线入射面；设置于第一侧面上的多个像素阴极；设置于第二侧面上的多个像素阳极，其中，像素阳极与像素阴极彼此一一对应；以及设置于射线入射面上各像素阴极或像素阳极外周的阻挡电极。
例如，射线入射面可以是第一侧面。这种情况下，阻挡电极可以设置于各像素阴极外周且对准于相应像素阳极之间的间隙。备选地，射线入射面可以是第二侧面。这种情况下，阻挡电极可以设置于各像素阳极外周且对准于相应像素阴极之间的间隙。
射线可以是各种合适的射线，例如包括X射线、伽马射线、同位素射线和阿尔法射线中至少之一。
像素阳极或像素阴极可以是各种合适的形状，例如正方形、矩形、圆形或菱形。
阻挡电极可以限定出正方形、矩形、圆形或菱形的空间，且射线入射面上的像素阴极或像素阳极可以设于相应的空间内。
半导体探测材料可以是各种合适的射线探测材料，例如包括CdZnTe、Ge、CdTe、HgI2、PbI2、TiBr或GaAs。
像素阳极和像素阴极可以分别是各种合适的电极材料，例如包括金、铂、镍、钛、铟中至少一种。
阻挡电极可以包括高原子序数金属材料如铅、铁、钨、铜、金、铂、铟中至少一种。
根据本公开的半导体探测器还可以包括填充于射线入射面上的像素阴极或像素阳极与阻挡电极之间的绝缘材料。
在根据本公开的半导体探测器中，素阳极或像素阴极可以排列为一维线阵或二维面阵。
根据本公开的半导体探测器还可以包括用于对射线入射面上的像素阳极或像素阴极以及阻挡电极施加偏压的焊接导线或PCB电路板封装。
根据本公开的实施例，可以在射线入射面上加入阻挡电极。阻挡电极可以阻挡探测器像素之间的辐射信号，使进入探测器的射线入射到像素内，从而避免像素之间的电荷共享，提高探测器的成像分辨率，减少共享信号对探测器性能的影响。
附图说明
通过以下参照附图对本公开实施例的描述，本公开的上述以及其他目的、特征和优点将更为清楚，在附图中：
图1是示出了根据本公开实施例的半导体探测器的透视图；
图2(a)是示出了根据本公开实施例的电极构造的截面图；
图2(b)是示出了根据本公开实施例的电极构造的截面图；
图2(c)是示出了根据本公开实施例的PCB电路板封装的截面图；
图3是示出了根据本公开实施例的电极构造的平面图；以及
图4是示出了根据本公开另一实施例的电极构造的平面图。
具体实施方式
以下，将参照附图来描述本公开的实施例。但是应该理解，这些描述只是示例性的，而并非要限制本公开的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本公开的概念。
在附图中示出了根据本公开实施例的各种结构示意图。这些图并非是按比例绘制的，其中为了清楚表达的目的，放大了某些细节，并且可能省略了某些细节。图中所示出的各种区域、层的形状以及它们之间的相对大小、位置关系仅是示例性的，实际中可能由于制造公差或技术限制而有所偏差，并且本领域技术人员根据实际所需可以另外设计具有不同形状、大小、相对位置的区域/层。
在本公开的上下文中，当将一层/元件称作位于另一层/元件“上”时，该层/元件可以直接位于该另一层/元件上，或者它们之间可以存在居中层/元件。另外，如果在一种朝向中一层/元件位于另一层/元件“上”，那么当调转朝向时，该层/元件可以位于该另一层/元件“下”。
图1是示出了根据本公开实施例的半导体探测器的透视图。
如图1所示，根据该实施例的半导体探测器100可以包括半导体探测材料101。在此，半导体探测材料101能够与所要探测的辐射进行相互作用，并产生电荷。例如，半导体探测材料101可以包括CdZnTe、Ge、CdTe、HgI2、PbI2、TlBr或GaAs。在以下描述中，以CdZnTe(CZT)为例进行描述，但是本公开不限于此。半导体探测材料101可以是晶体材料，因此其至少一些表面例如可以通过解理来得到。在该示例中，将半导体探测材料101示出为六面体(更具体地，长方体)，尺寸为约10mm×10mm×5mm。但是本公开不限于此。
半导体探测材料101可以包括相对的侧面101S-1和101S-2，在这两个侧面上可以分别形成阴极103和阳极105。在阴极103和阳极105之间可以形成电场，用以引导辐射在半导体探测材料101中导致的电荷，以便对辐射进行探测。在以下描述中，以侧面101S-1为辐射的射线入射面为例进行描述。射线可以包括例如X射线、伽马射线、同位素射线和阿尔法射线中至少之一。这种情况下，辐射可以经阴极103入射到半导体探测材料101中，与半导体探测材料101相互作用，并产生电荷(例如，电子)。电荷可以被阳极105收集，并由此得到作为探测器探测结果的探测信号。当然，本公开不限于此。例如，射线可以从侧面101S-2入射。这种情况下，以下描述中阴极和阳极可以互换。
阴极103和阳极105各自例如可以包括导电材料，例如金属材料如金、铂、镍、钛、铟中一种或它们的混合材料，或者可以是它们的叠层。阴极103和阳极105例如可以通过在半导体探测材料101的侧面101S-1和101S-2上分别蒸镀导电材料，并对蒸镀的导电材料进行光刻来形成。在此需要指出的是，阴极103和阳极105可以包括相同或不同的材料。
阴极103和阳极105可以形成为各种样式。在此，以像素型电极为例进行描述。具体地，阴极103可以形成为侧面101S-1上形成的像素阵列，阳极105可以形成为侧面101S-2上的像素阵列。这种阵列可以是一维线阵或二维面阵。这在以下将进一步详细描述。
图2(a)是示出了根据本公开实施例的电极构造的截面图。
如图2(a)所示，根据该实施例的半导体探测器200可以包括半导体探测材料201以及设于该半导体探测材料201的相对侧面上的阴极和阳极。在此，阴极和阳极都形成为像素配置，分别包括像素阴极203和像素阳极205。这些像素电极(阴极或阳极)限定了半导体探测器的探测像素。在此，所谓“探测像素”，是指探测器根据这些像素的探测结果，来对所探测的辐射进行成像，即探测像素对应于辐射图像中的像素。关于半导体探测材料、阳极和阴极的配置，还可以参见以上结合图1的描述。
一般而言，像素阴极203和像素阳极205可以彼此一一对应。即，一个像素阴极203可以对应于一个像素阳极205，例如它们彼此在位置上对准，更优选地，彼此的中心对准。于是，经由一个像素阴极203入射的射线在半导体探测材料201中导致的电荷可以被与之相应的像素阳极205收集。这里需要指出的是，像素阴极203和像素阳极205的大小和形状可以相同，也可以不同。
如在背景技术部分中所述，像素配置的半导体探测器存在电荷共享问题。为此，根据该实施例的半导体探测器200还包括设置于像素阴极203外周的阻挡电极207。更具体地，阻挡电极207可以围绕像素阴极203设置，从而限定出面向像素阴极203的孔径，入射的射线可以通过这些孔径而入射到像素阴极203上。可以根据实际需要，调节孔径。例如，可以增大孔径，以提高计数率。
阻挡电极207可以由能够吸收或者阻挡射线的材料制成。例如，阻挡电极207可以包括高原子序数(例如，不低于铁的原子序数)金属材料如铅、铁、钨、铜、金、铂或铟，或者其他金属材料如铝等，或者可以是它们的混合材料或者叠层，例如铅和铜的叠层。
可以根据入射射线的能量来确定阻挡电极207的厚度，使得足以吸收或阻挡入射的射线。另外，还可以根据半导体探测材料201的性能和厚度，来确定阻挡电极207的厚度。例如，虽然阻挡电极207的厚度不足以完全阻挡入射射线，但是未被阻挡的射线不影响探测器正常工作即可。
阻挡电极207的边缘可以相对于相应像素阳极205之间间隙的边界(如I图2(a)中的虚线所示)向外延伸，因此阻挡电极207可以大于相应像素阳极205之间的间隙，从而可以有效地遮挡像素阳极205之间的区域。根据本公开的实施例，阻挡电极207可以对准于相应像素阳极205之间的间隙(例如，中心对准)。相应地，像素阴极203的外周可以相对于对应像素阳极205的外周缩回。
于是，当射线(例如，垂直)入射到入射面(图2(a)中的上表面)时，入射在像素阳极中间位置处的射线可以被阻挡电极207所阻挡。这样，可以避免电荷共享的问题。
阻挡电极207和像素阴极203的尺寸可以根据实际应用、半导体探测材料201的尺寸和性能而定。例如，在像素精度要求较高的应用如医疗CT中，可以设置小的像素阴极以及相对大面积的阻挡电极；而在像素精度要求较低的应用中，阻挡电极的相对面积可以减小。
在图2(a)中，示出了阻挡电极207高于像素阴极203的情况。但是，本公开不限于此。阻挡电极207的厚度与像素阴极203的厚度也可以相同。另外，在阻挡电极207与像素阴极203之间，还可以填充绝缘材料(未示出)。
在阻挡电极207高于像素阴极203的情况下，如图2(b)所示，可以通过例如导线209将像素阴极203引出至引出电极211。另外，可以在阻挡电极207之间填充绝缘材料213，绝缘材料213覆盖了像素阴极203。引出电极211可以设置在绝缘材料213上。这样，引出电极211和阻挡电极207可以在大致同一个平面上，方便偏移的连接和PCB板的封装。
对于探测过程中像素阴极203与阻挡电极207的偏压设置，可以通过基准射线源垂直照射像素阴极，使得在所选偏压下，进入像素阴极203的信号全被被对应的像素阳极205采集。像素阴极203与阻挡电极207的偏压可以相同，也可以不同。可以通过焊接导线向它们施加偏压。或者，也可以通过PCB电路板封装来施加偏压。
图2(c)中示出了用于图2(b)所示半导体探测器200的示例PCB电路板封装。如图2(c)所示，PCB电路板220的一侧(图中下侧)可以结合至半导体探测器200的一侧(图中上侧)。在PCB电路板220的该侧，可以设置焊盘221，用于与像素阴极的引出电极211电接触。例如，焊盘221的样式可以与引出电极211的样式相同。焊盘221可以通过过孔223引至PCB电路板220的另一侧(图中上侧)。另外，PCB电路板220中还设置有与阻挡电极207相对应的过孔225。过孔223、225可以在PCB电路板的另一侧(图中上侧)连接至偏压。
图3是示出了根据本公开实施例的电极构造的平面图。
根据该实施例的位于射线入射面上的电极300可以包括像素阴极303的二维阵列。在图3中，示出了4×4的阵列，但是本公开不限于此。本公开可以包括更大或更小的阵列，且阵列中行中的像素数不必等于列中的像素数。相应地，在相对的侧面上，像素阳极可也形成4×4的阵列(未示出)。
在该示例中，将像素阴极303示出为正方形，但是本公开不限于此。例如，像素阴极303可以根据实际需要，形成为矩形、圆形、菱形等其他形状。
另外，电极300还包括阻挡电极307。在该示例中，阻挡电极307形成为单片，覆盖整个入射面。该单片的阻挡电极307在内部限定了一些孔径，像素阴极303设置于这些孔径内。孔径可以形成为正方形、矩形、圆形或菱形的空间，从而可以相应地在这些孔径这设置正方形、矩形、圆形或菱形的像素阴极303。当然，孔径的形状与像素阴极303的形状不必完全相同。在孔径的内壁与像素阴极303的外周之间，可以设置绝缘材料。
在以上实施例中，将像素阳极的阵列示出为二维面阵，但是本公开不限于此。例如，像素阳极的阵列可以是一维线阵或梯形结构等其他布局。
图4是示出了根据本公开另一实施例的电极构造的平面图。
如图4所示，根据该实施例的电极400可以包括像素阴极403的一维线阵以及设置于像素阴极403外周的阻挡电极407。关于它们的配置，可以参见以上描述。
以上对本公开的实施例进行了描述。但是，这些实施例仅仅是为了说明的目的，而并非为了限制本公开的范围。本公开的范围由所附权利要求及其等价物限定。不脱离本公开的范围，本领域技术人员可以做出多种替代和修改，这些替代和修改都应落在本公开的范围之内。

Claims (10)

1.一种半导体探测器，包括：
半导体探测材料，包括彼此相对的第一侧面和第二侧面，其中，第一侧面是接收入射射线的射线入射面；
设置于第一侧面上的多个像素阴极；
设置于第二侧面上的多个像素阳极，其中，像素阳极与像素阴极彼此一一对应；以及
设置于第一侧面上各像素阴极外周的阻挡电极，其中，阻挡电极由能够阻挡入射到其上的射线进入半导体探测材料的材料制成。
2.根据权利要求1所述的半导体探测器，其中，阻挡电极对准于相应像素阳极之间的间隙。
3.根据权利要求1所述的半导体探测器，其中，射线包括X射线、伽马射线、同位素射线和阿尔法射线中至少之一。
4.根据权利要求1所述的半导体探测器，其中，像素阳极或像素阴极的形状为正方形、矩形、圆形或菱形。
5.根据权利要求1所述的半导体探测器，其中，阻挡电极限定出正方形、矩形、圆形或菱形的空间，且像素阴极设于相应的空间内。
6.根据权利要求1所述的半导体探测器，其中，半导体探测材料包括CdZnTe、Ge、CdTe、HgI2、PbI2、TlBr或GaAs。
7.根据权利要求1所述的半导体探测器，其中，像素阳极和像素阴极分别包括金、铂、镍、钛、铟中至少一种。
8.根据权利要求1所述的半导体探测器，其中，阻挡电极包括高原子序数金属材料如铅、铁、钨、铜、金、铂、铟中至少一种。
9.根据权利要求1所述的半导体探测器，还包括：填充于射线入射面上的像素阴极或像素阳极与阻挡电极之间的绝缘材料。
10.根据权利要求1所述的半导体探测器，其中，像素阳极或像素阴极排列为一维线阵或二维面阵。
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108445525B (zh) * 2018-01-31 2024-03-19 张岚 面阵列像素探测器、辐射探测***及辐射场探测方法
CN108267776A (zh) * 2018-02-02 2018-07-10 奕瑞新材料科技（太仓）有限公司 提高中低能射线探测能力的多层探测器结构及方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002134A (en) * 1995-10-13 1999-12-14 Digirad Corporation Cross-strip semiconductor detector with cord-wood construction
US6034373A (en) * 1997-12-11 2000-03-07 Imrad Imaging Systems Ltd. Semiconductor radiation detector with reduced surface effects
CN1579328A (zh) * 2003-08-01 2005-02-16 Ge医药***环球科技公司 用于直接光－电子转换探测器阵列的保护环
WO2009134629A2 (en) * 2008-04-29 2009-11-05 Redlen Technologies Act attachment for radiation detector
CN101911299A (zh) * 2007-12-28 2010-12-08 皇家飞利浦电子股份有限公司 X射线半导体成像器像素的电隔离
CN104024889A (zh) * 2011-12-13 2014-09-03 皇家飞利浦有限公司 辐射探测器
CN105093259A (zh) * 2015-08-14 2015-11-25 京东方科技集团股份有限公司 射线探测器
CN105339810A (zh) * 2013-06-28 2016-02-17 皇家飞利浦有限公司 半导体闪烁探测器
CN206074817U (zh) * 2016-08-31 2017-04-05 同方威视技术股份有限公司 半导体探测器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL137579A (en) * 2000-07-30 2006-12-31 Orbotech Medical Solutions Ltd Gamma-ray detector for coincidence detection
US20080020351A1 (en) * 2003-09-15 2008-01-24 Alexander Hilscher Method and device for cleaning teeth
US7196332B2 (en) * 2004-05-04 2007-03-27 General Electric Company Monolithic x-ray detector with staggered detection areas
US7495225B2 (en) * 2004-12-08 2009-02-24 General Electric Company Methods and apparatus for pixilated detector masking
JP2008546177A (ja) * 2005-05-16 2008-12-18 Ｉｉ−Ｖｉ インコーポレイテッド 高性能のＣｄｘＺｎ１−ｘＴｅ（０≦ｘ≦１）のＸ線及びγ線の放射線検出器およびその製造方法
US8067744B2 (en) * 2005-07-06 2011-11-29 Ge Healthcare Israel Method and apparatus of detecting ionizing radiation
DE102006046314A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Strahlungsdirektkonvertermodul und Strahlungsdirektkonverter
US7486764B2 (en) * 2007-01-23 2009-02-03 General Electric Company Method and apparatus to reduce charge sharing in pixellated energy discriminating detectors
US8199882B2 (en) * 2009-12-07 2012-06-12 Moxtek, Inc. Integrated collimator
US8405038B2 (en) * 2009-12-30 2013-03-26 General Electric Company Systems and methods for providing a shared charge in pixelated image detectors
US20130161523A1 (en) * 2011-12-23 2013-06-27 General Electric Company Radiation detector with voltage-biased focus grid
US9510792B2 (en) * 2013-05-17 2016-12-06 Toshiba Medical Systems Corporation Apparatus and method for collimating X-rays in spectral computer tomography imaging
US10393891B2 (en) * 2016-05-03 2019-08-27 Redlen Technologies, Inc. Sub-pixel segmentation for semiconductor radiation detectors and methods of fabricating thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002134A (en) * 1995-10-13 1999-12-14 Digirad Corporation Cross-strip semiconductor detector with cord-wood construction
US6034373A (en) * 1997-12-11 2000-03-07 Imrad Imaging Systems Ltd. Semiconductor radiation detector with reduced surface effects
CN1579328A (zh) * 2003-08-01 2005-02-16 Ge医药***环球科技公司 用于直接光－电子转换探测器阵列的保护环
CN101911299A (zh) * 2007-12-28 2010-12-08 皇家飞利浦电子股份有限公司 X射线半导体成像器像素的电隔离
WO2009134629A2 (en) * 2008-04-29 2009-11-05 Redlen Technologies Act attachment for radiation detector
CN104024889A (zh) * 2011-12-13 2014-09-03 皇家飞利浦有限公司 辐射探测器
CN105339810A (zh) * 2013-06-28 2016-02-17 皇家飞利浦有限公司 半导体闪烁探测器
CN105093259A (zh) * 2015-08-14 2015-11-25 京东方科技集团股份有限公司 射线探测器
CN206074817U (zh) * 2016-08-31 2017-04-05 同方威视技术股份有限公司 半导体探测器

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