CN106301317B - A kind of method of adjustment and system of IGBT driving voltage - Google Patents
A kind of method of adjustment and system of IGBT driving voltage Download PDFInfo
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- CN106301317B CN106301317B CN201610761952.4A CN201610761952A CN106301317B CN 106301317 B CN106301317 B CN 106301317B CN 201610761952 A CN201610761952 A CN 201610761952A CN 106301317 B CN106301317 B CN 106301317B
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- driving voltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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Abstract
The invention discloses the methods of adjustment and system of a kind of IGBT driving voltage.The method includes the steps: S1: determine the action frequency of IGBT and actuation time under applying working condition；S2: according to the action frequency and actuation time, the first service life of IGBT under applying working condition is calculated；S3: according to IGBT grid oxic horizon life curve, the corresponding driving voltage of the first service life of IGBT under applying working condition is determined；S4: the driving voltage is exported to the IGBT.The method of adjustment and system of IGBT driving voltage proposed by the present invention can reduce the conduction loss of IGBT, reduce cost by promoting the driving voltage of IGBT.
Description
Technical field
The present invention relates to new energy field more particularly to a kind of methods of adjustment and system of IGBT driving voltage.
Background technique
In new energy wind power generation field, since grid collapses cause the accident of blower off-grid to happen occasionally, some
It is not avoided that even.Due to the presence of this electric network fault, all wind of the institution requests such as national grid and Electric Power Research Institute
Power generator group wants that the not off-grid operation of this electric network fault can be born, until failure vanishes.Some were also required in the electric network fault phase
Between be not only unable to off-grid, it is also necessary to power grid provide reactive power support.This just proposes more wind power-generating grid-connected current transformer
High requirement, therefore existing wind power generation plant all configures Crowbar device.
The switching devices such as thyristor, diode, IGBT are generally included in Crowbar device, form electricity by various combinations
Sub switch.Below by taking IGBT as an example, in Crowbar device, the driving voltage of IGBT generally take device manufacturer's recommended+
15V driving voltage is lower.Under such conditions, IGBT has very big conduction loss, can only be by selecting large capacity
IGBT meets requirement using multiple IGBT parallel connections, but such design causes the increase of cost.
Summary of the invention
It is a primary object of the present invention to propose the method for adjustment and system of a kind of IGBT driving voltage, it is intended to solve to improve
The driving voltage of IGBT reduces the conduction loss of IGBT while reducing cost.
To achieve the above object, the method for adjustment of a kind of IGBT driving voltage provided by the invention, the method comprising the steps of:
S1: the action frequency of IGBT and actuation time under applying working condition are determined；
S2: according to the action frequency and actuation time, the first service life of IGBT under applying working condition is calculated；
S3: according to IGBT grid oxic horizon life curve, determine that the first service life of IGBT under applying working condition is corresponding
Driving voltage；
S4: the driving voltage is exported to the IGBT.
Preferably, the step S1 comprises determining that the first driving voltage of IGBT under applying working condition.
Preferably, the step S3 include: for according to IGBT grid oxic horizon life curve, determine one be greater than it is described
Second service life of the first service life of the IGBT and corresponding driving voltage of second service life is big under applying working condition
In first driving voltage.
Preferably, first driving voltage is less than or equal to 15V.
Preferably, the value range of the driving voltage value is between 15V-30V.
In addition, to achieve the above object, the present invention also proposes a kind of adjustment system of IGBT driving voltage, the system packet
Include the first determining module, computing module, the second determining module, IGBT drive module；
First determining module, for determining the action frequency of IGBT and actuation time under applying working condition；
The computing module, for calculating first of IGBT under applying working condition according to the action frequency and actuation time
Service life；
Second determining module, for determining IGBT under applying working condition according to IGBT grid oxic horizon life curve
The corresponding driving voltage of first service life；
The IGBT drive module, for exporting the driving voltage to the IGBT.
Preferably, first determining module is also used to determine the first driving voltage of IGBT under applying working condition.
Preferably, second determining module is also used to determine that one is greater than according to IGBT grid oxic horizon life curve
Second service life of the first service life of IGBT and the corresponding driving electricity of second service life under the applying working condition
Pressure is greater than first driving voltage.
Preferably, the system also includes life curve memory modules；
The life curve memory module, for storing IGBT grid oxic horizon life curve.
Preferably, the range of the driving voltage value is between 15V-30V.
The method of adjustment and system of the IGBT driving voltage of the embodiment of the present invention, by promoting the driving voltage of IGBT, energy
The conduction loss for enough reducing IGBT, reduces cost.
Detailed description of the invention
Fig. 1 is the method for adjustment flow diagram of the IGBT driving voltage of first embodiment of the invention；
Fig. 2 is the method for adjustment flow diagram of the IGBT driving voltage of second embodiment of the invention；
Fig. 3 is the IGBT grid oxic horizon life curve schematic diagram under 0.1%Failure；
Fig. 4 is the adjustment system structure diagram of the IGBT driving voltage of third of the present invention or fourth embodiment；
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
The each embodiment of the present invention is realized in description with reference to the drawings.In subsequent description, using for indicating member
The suffix of such as " module ", " component " or " unit " of part is only for being conducive to explanation of the invention, and there is no specific for itself
Meaning.
As shown in Figure 1, first embodiment of the invention proposes that a kind of method of adjustment of IGBT driving voltage, this method include step
It is rapid:
S1: the action frequency of IGBT and actuation time under applying working condition are determined；
In the present embodiment, applying working condition includes the various applying working conditions of IGBT in Crowbar device.
S2: according to the action frequency and actuation time, the first service life of IGBT under applying working condition is calculated；
S3: it is in the present embodiment, described according to IGBT grid oxic horizon life curve, determine of IGBT under applying working condition
The corresponding driving voltage of one service life；The range of driving voltage value is between 15V-30V.
S4: the driving voltage is exported to the IGBT.
As shown in Fig. 2, second embodiment of the invention proposes that a kind of method of adjustment of IGBT driving voltage, this method include step
It is rapid:
S11: the first driving voltage, action frequency and the actuation time of IGBT under applying working condition are determined；
In the present embodiment, applying working condition includes the various applying working conditions of IGBT in Crowbar device.
In the present embodiment, the first driving voltage is less than or equal to 15V.
S12: according to the action frequency and actuation time, the first service life of IGBT under applying working condition is calculated；
S13: according to IGBT grid oxic horizon life curve, determine that one makes greater than first of IGBT under the applying working condition
It is greater than first driving voltage with second service life and the corresponding driving voltage of second service life in service life；
In the present embodiment, the range of the corresponding driving voltage value of second service life is between 15V-30V.
S14: the driving voltage is exported to the IGBT.
With reference to Fig. 3, as exemplary, a concrete case is given below to illustrate what how the above method was realized.
Fig. 3 is the IGBT grid oxic horizon life curve schematic diagram under 0.1%Failure (i.e. crash rate is 0.1%),
Abscissa is driving voltage, and ordinate is service life.
In general, in wind generator system the IGBT of Crowbar device actuation time be 625ms, driving voltage≤
15V；Action frequency determines by electric network fault rate, in practice, since electric network fault rate is low, Crowbar in wind generator system
The action frequency of the IGBT of device is less, and 1 year is about several times or tens times.Because the driving voltage of IGBT is no more than 15V,
Under such conditions, IGBT has very big conduction loss, general by the IGBT of selection large capacity or using multiple IGBT
Parallel connection meets requirement, but cost in this way is very high.
It can be seen that in the case where 0.1%Failure, drive by IGBT grid oxic horizon life curve schematic diagram
There is 1x10 when voltage 23V5S is roughly equal to 28 hour service life.Since the actuation time of IGBT is 625ms, it means that when driving electricity
When pressure is 23V, the action frequency of IGBT be can achieve 160,000 times.The action frequency fully meets above situation.
Therefore, we can adjust the driving voltage for exporting 23V to IGBT, by promoting IGBT by IGBT drive module
Driving voltage, and then the conduction loss of IGBT is reduced, reduce cost.
The present invention further provides a kind of systems.
Referring to Fig. 4, this implementation 3rd embodiment provides a kind of adjustment system of IGBT driving voltage, and system 10 includes first
Determining module 101, computing module 102, the second determining module 104, IGBT drive module 105；
First determining module 101, for determining the action frequency of IGBT and actuation time under applying working condition；
Computing module 102, for according to the action frequency and actuation time, calculate IGBT under applying working condition first to make
Use the service life；
Second determining module 104 determines the of IGBT under applying working condition for according to IGBT grid oxic horizon life curve
The corresponding driving voltage of one service life；
IGBT drive module 105, for exporting the driving voltage to the IGBT.
Further, in the present embodiment, system 10 further includes life curve memory module 103, for storing IGBT grid
Pole oxide layer life curve.
In the present embodiment, the range of the driving voltage value is between 20V-30V.
Referring again to Fig. 4, this implementation fourth embodiment provides a kind of adjustment system of IGBT driving voltage, and system 10 includes
First determining module 101, computing module 102, the second determining module 104, IGBT drive module 105；
First determining module 101, when for determining the first driving voltage, action frequency and movement of IGBT under applying working condition
Between；
Computing module 102, for according to the action frequency and actuation time, calculate IGBT under applying working condition first to make
Use the service life；
Second determining module 104, for determining that one uses work greater than described according to IGBT grid oxic horizon life curve
The second service life of the first service life of IGBT and the corresponding driving voltage of second service life are greater than described under condition
First driving voltage；
IGBT drive module 105, for exporting the driving voltage to the IGBT.
Further, in the present embodiment, system 10 further includes life curve memory module 103, for storing IGBT grid
Pole oxide layer life curve.
In the present embodiment, the first driving voltage is less than or equal to 15V.
In the present embodiment, the range of the corresponding driving voltage value of second service life is between 15V-30V.
The adjustment system of the IGBT driving voltage of the embodiment of the present invention can reduce by promoting IGBT driving voltage
The conduction loss of IGBT reduces cost.
It should be noted that, in this document, the terms "include", "comprise" or its any other variant are intended to non-row
His property includes, so that the process, method, article or the device that include a series of elements not only include those elements, and
And further include other elements that are not explicitly listed, or further include for this process, method, article or device institute it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including being somebody's turn to do
There is also other identical elements in the process, method of element, article or device.
The above is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (6)
1. a kind of method of adjustment of IGBT driving voltage, which is characterized in that the method includes the steps:
S1: the first driving voltage, action frequency and the actuation time of IGBT under applying working condition are determined；
S2: according to the action frequency and actuation time, the first service life of IGBT under applying working condition is calculated；
S3: according to IGBT grid oxic horizon life curve, determine that one uses the longevity greater than first of IGBT under the applying working condition
The second service life and the corresponding driving voltage of second service life of life are greater than first driving voltage；
S4: the corresponding driving voltage of second service life is exported to the IGBT.
2. a kind of method of adjustment of IGBT driving voltage as described in claim 1, which is characterized in that first driving voltage
Less than or equal to 15V.
3. a kind of method of adjustment of IGBT driving voltage as described in claim 1, which is characterized in that second service life
The value range of corresponding driving voltage value is between 15V-30V.
4. a kind of adjustment system of IGBT driving voltage, which is characterized in that the system comprises the first determining module, calculate mould
Block, the second determining module, IGBT drive module；
First determining module, for determining the first driving voltage, action frequency and the actuation time of IGBT under applying working condition；
The computing module, for according to the action frequency and actuation time, calculate IGBT under applying working condition first to be used
Service life；
Second determining module, for determining that is greater than the applying working condition according to IGBT grid oxic horizon life curve
Second service life of the first service life of lower IGBT and the corresponding driving voltage of second service life are greater than described the
One driving voltage；
The IGBT drive module, for exporting the corresponding driving voltage of second service life to the IGBT.
5. a kind of adjustment system of IGBT driving voltage as claimed in claim 4, which is characterized in that the system also includes the longevity
Order curve memory module；
The life curve memory module, for storing IGBT grid oxic horizon life curve.
6. a kind of adjustment system of IGBT driving voltage as claimed in claim 4, which is characterized in that second service life
The range of corresponding driving voltage value is between 15V-30V.
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| CN201610761952.4A CN106301317B (en) | 2016-08-30 | 2016-08-30 | A kind of method of adjustment and system of IGBT driving voltage |
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| CN201610761952.4A CN106301317B (en) | 2016-08-30 | 2016-08-30 | A kind of method of adjustment and system of IGBT driving voltage |
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| CN106301317A CN106301317A (en) | 2017-01-04 |
| CN106301317B true CN106301317B (en) | 2019-04-16 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103207362A (en) * | 2012-01-11 | 2013-07-17 | Abb研究有限公司 | System and method for monitoring in real time the operating state of an IGBT device |
| CN105486992A (en) * | 2015-11-05 | 2016-04-13 | 南车株洲电力机车研究所有限公司 | Device and method for on-line health management of insulated gate bipolar transistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7689377B2 (en) * | 2006-11-22 | 2010-03-30 | Texas Instruments Incorporated | Technique for aging induced performance drift compensation in an integrated circuit |
| US7579859B2 (en) * | 2007-06-14 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for determining time dependent dielectric breakdown |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103207362A (en) * | 2012-01-11 | 2013-07-17 | Abb研究有限公司 | System and method for monitoring in real time the operating state of an IGBT device |
| CN105486992A (en) * | 2015-11-05 | 2016-04-13 | 南车株洲电力机车研究所有限公司 | Device and method for on-line health management of insulated gate bipolar transistor |
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| CN106301317A (en) | 2017-01-04 |
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