CN106301230B - One kind integrating single balance mixer based on thick substrate Schottky diode CPW - Google Patents
One kind integrating single balance mixer based on thick substrate Schottky diode CPW Download PDFInfo
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- CN106301230B CN106301230B CN201610713184.5A CN201610713184A CN106301230B CN 106301230 B CN106301230 B CN 106301230B CN 201610713184 A CN201610713184 A CN 201610713184A CN 106301230 B CN106301230 B CN 106301230B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
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- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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Abstract
The invention discloses one kind to integrate single balance mixer based on thick substrate Schottky diode CPW, including high frequency short circuit sectorial block and intermediate frequency lc circuit at input and output GSG probe, RF local oscillator matching, two independent Schottky diodes, intermediate frequency, input and output GSG probe, RF local oscillator matching are connected between high frequency short circuit sectorial block and intermediate frequency lc circuit by transmission line at two independent Schottky diodes, intermediate frequency, and transmission line is CPW；The present invention can avoid the complexity of complicated reduction process and reduction installation using the mixting circuit structure of CPW for the thick substrate of the such high dielectric constant of GaAs, and design flexibility is high；Using CPW sector branch, the biobelt short-circuit structure of fundamental wave and harmonic wave can be obtained；Using the double-deck extremely close metal, short and small intermediate frequency filtering match circuit can be designed, and separation assembly is difficult to control area, this is to array detection and unfavorable.
Description
Technical field
The present invention relates to use CPW integrated circuit technique, especially one kind to be based on thick substrate Xiao Te in thick substrate
Based diode CPW integrates single balance mixer.
Background technique
GaAs diode begins to develop from 1970s, so far the separation mixing based on GaAs Schottky diode
Technology is very widely used, especially in Terahertz field, but is concentrated mainly on based on discrete device combination quartz thin film,
There is great constraint to circuit design since device and circuit separate this kind of mode, circuit must obey device property could be organic
It can realize desired function.Schottky integrated circuit last decade is developed, but no matter from the aspect of which, current circuit development
Trend is towards thin film circuit direction (quartz thin film thickness < 50um, GaAs circuit thickness < 10um), to technique and matching requirements
All extremely harsh, there are great problems for success rate, can only become the experimental article of a small number of oversea laboratories, in conjunction with metal cavity collection
At lower characteristic is spent, do not have array use condition for array.
The diode of low parasitic parameter is had been provided at present, and cutoff frequency is more than number THz, this technology can be supported
Complete the integrated mixing frequency multiplier circuit design of Terahertz.In addition, GaAs substrate dielectric constant is 13, radio signal transmission has very big
Loss, if be less than 10um will form Medium Wave Guide field in a substrate, it is difficult to realize microstrip line transmit, it more difficult to realize
The low damage transmission of RF, performance will be by extreme influence.
Summary of the invention
The present invention is to overcome above-mentioned technological deficiency, is provided a kind of based on the integrated Dan Ping of thick substrate Schottky diode CPW
Weigh frequency mixer, in conjunction with the advantage of GaAs Schottky diode and integrated circuit, under the conditions of GaAs thick substrate, in order to avoid height
Radio frequency transmission loss and Medium Wave Guide field, increase intermediate-frequency bandwidth, propose to balance fundamental wave mixing based on thick GaAs substrate CPW mode
Circuit structure can operate with the relevant detection of Terahertz.
Technical scheme is as follows:
One kind integrating single balance mixer based on thick substrate Schottky diode CPW, it is characterised in that: including input and output
GSG probe (GSG probe is the transmission probe of ground-signal-ground distribution, and the signal of standard is burst into output on probe platform),
High frequency short circuit sectorial block and intermediate frequency lc circuit at RF local oscillator matching, two independent Schottky diodes, intermediate frequency input defeated
GSG probe, RF local oscillator matching, high frequency short circuit sectorial block and intermediate frequency LC at two independent Schottky diodes, intermediate frequency out
It is connected by transmission line between circuit, transmission line is coplanar waveguide transmission line CPW, is required for reducing to substrate thickness.
The thick substrate used based on the integrated single balance mixer of thick substrate Schottky diode CPW is greater than for thickness
The substrate of 200um.
The intermediate frequency lc circuit is filter and intermediate frequency matching while using.
The broadband property for integrating single balance mixer based on thick substrate Schottky diode CPW is suitable for fixed intermediate frequency,
Scan local oscillator and radio frequency simultaneously, bandwidth ratio can be greater than 2/7(=bandwidth/centre frequency=f BW /f 0).
It is described based on thick substrate Schottky diode CPW integrate single balance mixer concrete operating principle and each section it
Between function be described as follows by signal sequence:
1, the GSG probe of radio frequency and local oscillator GSG:RF input and LO input are for bursting into Terahertz local oscillator and radio frequency letter
Number；
2, Lange coupler: the circuit is fundamental wave circuit, and zero intermediate frequency may be implemented, so RF and LO frequency in principle
Difference can be with very little, in order to avoid input signal RF and LO are interfered with each other, after GSG respectively bursts signal, by second part
For a Lange coupler, it acts as improve RF and LO isolation and signal is burst into two diode branch, most respectively
Singly balanced and differential configuration are realized eventually；
3, Match: after Lange coupler, signal can pour into matching network respectively, which mainly realizes two
Big function, first, matching input RF and LO signal reduces signal waste；Second, it include a ground connection half-wavelength in matching network
Branch line, for being mixed DC loop ground connection；
4, Schottky diode: Schottky diode is mixting circuit core devices, and signal is burst from matching network into Xiao Te
In based diode, the function of fundamental wave mixing plus-minus is realized by the strong nonlinearity effect of frequency mixer；
5, LO&2LO Sector: by diode be mixed effect after, signal be divided into LO and RF each harmonic (including
Fundamental signal) and mixing after IF signal, in order to realize the isolation of double branches, in the diode between be inserted into the fan-shaped branch of short circuit
Section, short circuit sector minor matters are that the short circuit of LO and 2LO biobelt is realized by CPW；
6, IF filter& IF match: after diode is mixed, LO and 2LO are short-circuited fan-shaped minor matters short circuit, IF letter
It number is then burst by IF filtering and match circuit structure into GSG, completes entire circuit signal transmission.The circuit maximum feature is to utilize
LC filter structure simplifies intermediate-frequency circuit；
7, on circuit layout, in order to avoid the variation of CPW parity modes, (20 ~ 30um) and structure become at a certain distance
There are air bridges at change.
In foregoing description, RF input is radio frequency input, and LO input is local oscillator input, and Lange Coupler is bright lattice
Coupler, Schottky diode are Schottky diode, and Match is matching section, and IF filter&IF match is intermediate frequency filter
Wave matching, IF input are intermediate frequency output, and Sector is the fan-shaped minor matters of short circuit.
The present invention is realized using Lange coupler and is replaced based on 90 ° of balanced structure fundamental wave mixings of GaAs Schottky diode
Single-balanced structure changes to two-way from previous single channel mixting circuit, improves frequency mixer work quality；Utilize the CPW of integrated circuit
Structure adjusts the Gap size (gap between CPW signal wire and ground GaP) in fan-shaped size and CPW, realizes dual-passband short circuit,
It is in working frequency rangef LOIn the case where, fundamental wave and second harmonic can be inhibited simultaneously, this is to single point of microstrip circuitry
It is difficult to realize when branch line realizes fundamental wave and second harmonic short circuit simultaneously；The double-deck gold is realized using that can punch in integrated circuit
The characteristic (CPW walks coating metal, and second layer metal is located at 0.5um hereinafter, just will use when only special) of category is utilizing the
Two layers of metal and the small thickness of first layer metal, can realize capacitor easily, to realize the low of small size using LC resonance unit
Bandpass filter function；This circuit largely uses GND interconnection and lower metal of the air bridges by CPW and crosses CPW, realizes
Lange coupler and low-pass filter capacitance etc..
Beneficial effects of the present invention are as follows:
1, the thick substrate using the mixting circuit structure of CPW for the such high dielectric constant of GaAs can subtract to avoid complicated
Thin technique and the complexity for reducing installation；
2, using self-developing technique, design flexibility is can be improved compared to separation assembly in IC design；
3, using CPW sector branch, the biobelt short-circuit structure of available fundamental wave and harmonic wave, in contrast, current film
Microstrip circuit is difficult to realize；
4, using the double-deck extremely close metal, short and small intermediate frequency filtering match circuit (thickness < 0.5um) can be designed, and is divided
It is difficult to control area from component, this is to array detection and unfavorable.
Detailed description of the invention
Fig. 1 is the principle of the present invention block diagram；
Fig. 2 is circuit arrangement map of the invention；
Fig. 3 is two-metal layer process flowage structure schematic diagram in the specific embodiment of the invention.
Specific embodiment
As shown in Figure 1, a kind of integrate single balance mixer, including input and output based on thick substrate Schottky diode CPW
GSG probe, RF local oscillator matching, high frequency short circuit sectorial block and intermediate frequency LC electricity at two independent Schottky diodes, intermediate frequency
Road, input and output GSG probe, RF local oscillator matching, at two independent Schottky diodes, intermediate frequency high frequency short circuit sectorial block with
And connected by transmission line between intermediate frequency lc circuit, transmission line is CPW.
It is described to balance the thick substrate that fundamental mixer CPW integrated circuit uses based on 90 ° of GaAs Schottky diode as thickness
Degree is greater than the substrate of 200um.
The intermediate frequency lc circuit is filter and intermediate frequency matching while using.
The broadband property for balancing fundamental mixer CPW integrated circuit based on 90 ° of GaAs Schottky diode is suitable for solid
Determine intermediate frequency, while scanning local oscillator and radio frequency, bandwidth ratio can be greater than 2/7(=bandwidth/centre frequency=f BW /f 0).
According to Fig. 1, F input is radio frequency input, and LO input is local oscillator input, and Lange Coupler is bright lattice
Coupler, Schottky diode are Schottky diode, and Match is matching section, and IF filter&IF match is intermediate frequency filter
Wave matching, IF input are intermediate frequency output, and Sector is the fan-shaped minor matters of short circuit.It is described flat based on 90 ° of GaAs Schottky diode
Function between the concrete operating principle and each section of fundamental mixer CPW integrated circuit that weigh is described as follows by signal sequence:
1, the GSG probe of radio frequency and local oscillator GSG:RF input and LO input are for bursting into Terahertz local oscillator and radio frequency letter
Number；
2, Lange coupler: the circuit is fundamental wave circuit, and zero intermediate frequency may be implemented, so RF and LO frequency in principle
Difference can be with very little, in order to avoid input signal RF and LO are interfered with each other, after GSG respectively bursts signal, by second part
For a Lange coupler, it acts as improve RF and LO isolation and signal is burst into two diode branch, most respectively
Singly balanced and differential configuration are realized eventually；
3, Match: after Lange coupler, signal can pour into matching network respectively, which mainly realizes two
Big function, first, matching input RF and LO signal reduces signal waste；Second, it include a ground connection half-wavelength in matching network
Branch line, for being mixed DC loop ground connection；
4, Schottky diode: Schottky diode is mixting circuit core devices, and signal is burst from matching network into Xiao
In special based diode, the function of fundamental wave mixing plus-minus is realized by the strong nonlinearity effect of frequency mixer；
5, LO&2LO Sector: by diode be mixed effect after, signal be divided into LO and RF each harmonic (including
Fundamental signal) and mixing after IF signal, in order to realize the isolation of double branches, in the diode between be inserted into the fan-shaped branch of short circuit
Section, short circuit sector minor matters are that the short circuit of LO and 2LO biobelt is realized by CPW；
6, IF filtering and match circuit: after diode is mixed, LO and 2LO are short-circuited fan-shaped minor matters short circuit, IF signal
It is then burst by IF filtering and match circuit structure into GSG, completes entire circuit signal transmission.The circuit maximum feature is to utilize LC
Filter structure simplifies intermediate-frequency circuit；
7, circuit layout as shown in Fig. 2, in order to avoid CPW parity modes variation, at a certain distance (20 ~ 30um) and
There are air bridges at structure change.
The present invention is realized using Lange coupler and is replaced based on 90 ° of balanced structure fundamental wave mixings of GaAs Schottky diode
Single-balanced structure changes to two-way from previous single channel mixting circuit, improves frequency mixer work quality；Utilize the CPW of integrated circuit
Structure adjusts the Gap size in fan-shaped size and CPW, realizes dual-passband short circuit, is in working frequency rangef LOIn the case where, it can be with
Fundamental wave and second harmonic are inhibited simultaneously, this realizes that fundamental wave and second harmonic are short simultaneously to the single branch line of microstrip circuitry
It is difficult to realize when road；Using that in integrated circuit, can punch the characteristic for realizing double-level-metal, (CPW walks coating metal, the second layer
Metal is located at 0.5um hereinafter, just will use when only special), second layer metal and the small thickness of first layer metal are being utilized, it can
To realize capacitor easily, to realize the functions of low-pass filter of small size using LC resonance unit；This circuit largely uses
CPW is crossed in GND interconnection and lower metal of the air bridges by CPW, realizes Lange coupler and low-pass filter capacitance etc.,
These all use two-metal layer process process, process and structural schematic diagram, as shown in Figure 3.
Claims (4)
1. one kind integrates single balance mixer based on thick substrate Schottky diode CPW, it is characterised in that: including input and output
GSG probe, RF local oscillator matching, high frequency short circuit sectorial block and intermediate frequency LC electricity at two independent Schottky diodes, intermediate frequency
Road, input and output GSG probe, RF local oscillator matching, at two independent Schottky diodes, intermediate frequency high frequency short circuit sectorial block with
And connected by transmission line between intermediate frequency lc circuit, transmission line is CPW；The thick substrate used is thickness greater than 200um's
Substrate；The intermediate frequency lc circuit is filter and intermediate frequency matching while using.
2. according to claim 1 a kind of based on the integrated single balance mixer of thick substrate Schottky diode CPW, feature
Be: the bandwidth ratio of the integrated single balance mixer is greater than 2/7.
3. according to claim 1 a kind of based on the integrated single balance mixer of thick substrate Schottky diode CPW, feature
It is that working principle is as follows:
(1) the GSG probe of RF input and LO input is for bursting into Terahertz local oscillator and radiofrequency signal；
(2) it after signal of being burst respectively by input and output GSG probe, is coupled by the Lange for improving RF and LO isolation
Signal is burst into two branches with Schottky diode and matching network respectively, realizes singly balanced and differential configuration by device；
(3) signal pours into matching network respectively, includes a ground connection half-wavelength branch line in the matching network, for being mixed
DC loop ground connection；
(4) signal is burst in Schottky diode from matching network, passes through the function that strong nonlinearity effect realizes fundamental wave mixing plus-minus
Energy；
(5) after being mixed effect by Schottky diode, signal is divided into the IF signal after LO and RF each harmonic and mixing,
In order to realize the isolation of double branches, fan-shaped minor matters are inserted among Schottky diode, the sector minor matters realize LO by CPW
With 2LO biobelt short circuit；
(6) after Schottky diode is mixed, by fan-shaped minor matters short circuit, IF signal is then filtered and is matched by IF by LO and 2LO
Circuit structure is burst into GSG probe, and entire circuit signal transmission is completed.
4. a kind of thick substrate Schottky diode CPW that is based on according to claim 1 or 3 integrates single balance mixer,
It is characterized in that: in the integrated single balance mixer, being then provided with air bridges every 20-30um along the direction burst into signal, together
When air bridges are also equipped at structure change.
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| CN112230297B (en) * | 2020-09-03 | 2024-04-09 | 广东工业大学 | Detector based on N×M multi-frequency antenna array and SBD array |
| CN112284526B (en) * | 2020-09-03 | 2023-10-03 | 广东工业大学 | N X M terahertz detector array imaging system based on multi-frequency antenna structure |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5832376A (en) * | 1996-07-12 | 1998-11-03 | Endgate Corporation | Coplanar mixer assembly |
| CN1825684A (en) * | 2006-02-27 | 2006-08-30 | 东南大学 | Substrate integrated waveguide single balance mixer |
| CN103633943A (en) * | 2013-12-09 | 2014-03-12 | 中国电子科技集团公司第四十一研究所 | Ultra-wideband frequency mixer |
| CN103888081A (en) * | 2014-03-11 | 2014-06-25 | 西安邮电大学 | Double balanced mixer device |
| CN104617880A (en) * | 2015-01-08 | 2015-05-13 | 电子科技大学 | Terahertz frequency doubler using coplanar transmission line |
| CN104811144A (en) * | 2015-05-20 | 2015-07-29 | 中国电子科技集团公司第十三研究所 | Novel hybrid integrated circuit used for improving Terahertz mixer micropackage |
| CN105207625A (en) * | 2015-10-08 | 2015-12-30 | 电子科技大学 | Broadband terahertz harmonic mixer |
-
2016
- 2016-08-24 CN CN201610713184.5A patent/CN106301230B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5832376A (en) * | 1996-07-12 | 1998-11-03 | Endgate Corporation | Coplanar mixer assembly |
| CN1825684A (en) * | 2006-02-27 | 2006-08-30 | 东南大学 | Substrate integrated waveguide single balance mixer |
| CN103633943A (en) * | 2013-12-09 | 2014-03-12 | 中国电子科技集团公司第四十一研究所 | Ultra-wideband frequency mixer |
| CN103888081A (en) * | 2014-03-11 | 2014-06-25 | 西安邮电大学 | Double balanced mixer device |
| CN104617880A (en) * | 2015-01-08 | 2015-05-13 | 电子科技大学 | Terahertz frequency doubler using coplanar transmission line |
| CN104811144A (en) * | 2015-05-20 | 2015-07-29 | 中国电子科技集团公司第十三研究所 | Novel hybrid integrated circuit used for improving Terahertz mixer micropackage |
| CN105207625A (en) * | 2015-10-08 | 2015-12-30 | 电子科技大学 | Broadband terahertz harmonic mixer |
Non-Patent Citations (1)
| Title |
|---|
| "A W-band Low Conversion Loss Single Balanced Mixer with Planar GaAs Schottky Diodes";Dezhi Ding等;《2012 International Conference on Microwave and Millimeter Wave Technology(ICMMT)》;20120508;正文第1页左栏第1行-第4页左栏倒数第4行 |
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