CN106301043B - A kind of modular multilevel half-bridge transverter - Google Patents
A kind of modular multilevel half-bridge transverter Download PDFInfo
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- CN106301043B CN106301043B CN201610888830.1A CN201610888830A CN106301043B CN 106301043 B CN106301043 B CN 106301043B CN 201610888830 A CN201610888830 A CN 201610888830A CN 106301043 B CN106301043 B CN 106301043B
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of modular multilevel half-bridge transverter, each bridge arm of the transverter includes N number of standard half bridge submodule, and each standard half bridge submodule includes first switch and the second switch；1 standard half bridge submodule of preceding N in each upper bridge arm in from DC side to the 1 standard half bridge submodule of preceding N and each lower bridge arm for exchanging side direction from exchange side to direct current side direction further includes third switch；In upper bridge arm, standard half bridge submodule third in the block switch with it is adjacent compared with low potential standard half bridge submodule first switch complementation switching in the block；In lower bridge arm, standard half bridge submodule third switch in the block and this mould first switch complementation switching in the block.Without reducing rated voltage modulation ratio rated voltage modulation ratio is greatly improved, under identical AC and DC rated voltage in the present invention, reduce each bridge arm submodule quantity, cost is greatly reduced, switching loss is made to minimize, reduces the demand calculated in real time control system.
Description
Technical field
The present invention relates to transverter technical fields, more particularly to a kind of modular multilevel half-bridge transverter.
Background technology
Modular multilevel half-bridge transverter is applied to mesohigh field more, in order to ensure the modular multilevel half-bridge change of current
The normal operation of device needs the electric voltage equalization by the submodule in modular multilevel near rated voltage.Please refer to Fig. 1 and
Fig. 2, wherein Fig. 1 is a kind of structural schematic diagram of modular multilevel half-bridge transverter in the prior art, and Fig. 2 provides for Fig. 1
A kind of modular multilevel half-bridge transverter in standard half bridge submodule structural schematic diagram.Standard half bridge submodule is by two
A concatenated switch and the electric capacity of voltage regulation at the both ends for being connected in parallel on concatenated switch are constituted, wherein a switch includes one
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) and its anti-paralleled diode.
Pressure scheme requires six bridge arms of modular multilevel half-bridge transverter to have under arbitrary electrical angle enough
Available input or excision standard half bridge submodule.It in the prior art can be by modular multilevel half-bridge transverter
Specified modulation ratio selects between 0.8-0.85, but since specified modulation ratio is low, so as to cause in the volume of standard half bridge submodule
The quantity of standard half bridge submodule needed in the case that constant voltage is certain is more, substantially increases the cost of transverter.Due to existing
There is in technology modular multilevel half-bridge transverter can not achieve from pressing, the pressure scheme used to it is by by each of which
Standard half bridge submodule on bridge arm be divided into it is multigroup, take every group of rotation be connected mode pressed to realize, specifically, pass through reality
When acquire the capacitance voltage value of each standard half bridge submodule, the sequence of standard half bridge submodule voltage is then carried out, further according to bridge arm
Current direction determines the relatively low or higher submodule of input capacitance voltage.
But it is more than power frequency (note that this, which results in the switching frequency of existing pressure scheme,：Power frequency switching frequency is to switch
The operation that on and off is carried out in 0.02 second is each primary), typically about twice of power frequency causes the switching loss of transverter to increase.
The period for also requiring control system shorter simultaneously carries out the rotation of submodule voltage monitoring and standard half bridge submodule, this is to reality
When measure and control system reliability and operational capability have higher requirements, under the application more than standard half bridge submodule quantity,
The operational capability of control system easily becomes bottleneck.
Therefore, how to provide it is a kind of solve above-mentioned technical problem modular multilevel half-bridge transverter be art technology
The current problem to be solved of personnel.
Invention content
The object of the present invention is to provide a kind of modular multilevel half-bridge transverters, without reducing rated voltage modulation ratio,
Rated voltage modulation ratio is greatly improved, under identical AC and DC rated voltage, reduces each bridge arm submodule quantity,
Greatly reduce cost.On the other hand, switching frequency is strictly maintained at power frequency, and switching loss is made to minimize.Finally, due to the change of current
Device submodule realizes nature and presses, and simplifies modulation algorithm, reduces the demand calculated in real time control system.
In order to solve the above technical problems, the present invention provides a kind of modular multilevel half-bridge transverter, the modularization
Each bridge arm of more level half-bridge transverters includes N number of standard half bridge submodule, and N is the integer not less than 2, each mark
Quasi-semibridge submodule includes first switch and the second switch, in the first switch in the emitter of IGBT and the second switch
The collector of IGBT connects；
From DC side to the preceding N-1 standard half bridge submodule of exchange side direction and each lower bridge arm in each upper bridge arm
In preceding N-1 standard half bridge submodule from exchange side to direct current side direction further include third switch, in the third switch
The collector of IGBT is connect with the collector of IGBT in this mould first switch in the block, the emitter of IGBT in the third switch
It is connect with the collector of IGBT in the adjacent first switch in the block compared with low potential standard half bridge submodule；In the upper bridge arm, institute
Standard half bridge submodule third in the block switch is stated with adjacent compared with low potential standard half bridge submodule first switch complementation switching in the block,
In the lower bridge arm, the standard half bridge submodule third switch in the block and this mould first switch complementation switching in the block.
Preferably, in each bridge arm, the capacitance near the standard half bridge submodule electric capacity of voltage regulation in the block of exchange side is more than
Near the capacitance of the standard half bridge submodule electric capacity of voltage regulation in the block of DC side, and two standard half bridge of arbitrary neighborhood therein
In module, the standard half bridge close to DC side is not less than close to the capacitance of the standard half bridge submodule electric capacity of voltage regulation in the block of exchange side
The capacitance of submodule electric capacity of voltage regulation in the block.
Preferably, in each bridge arm, N number of standard half bridge submodule N number of electric capacity of voltage regulation in the block is divided into M groups, wherein M is
Integer more than 2 and less than N is followed successively by first group from exchange side to direct current side direction, second group ... up in M groups, every group
Electric capacity of voltage regulation capacitance it is equal, wherein the capacitance of the electric capacity of voltage regulation in first group in second group of the capacitance ＞ of electric capacity of voltage regulation
>=... the capacitance of the electric capacity of voltage regulation in >=M groups.
Preferably, M takes 4.
Preferably, M takes 5.
Preferably, each standard half bridge submodule of each bridge arm further includes：
The voltage regulation resistance in parallel with the electric capacity of voltage regulation；
Then all third switches are only just synchronous when whole standard half bridge submodule complete resections on the bridge arm of place
It is closed, resynchronizes disconnection after keeping preset time, wherein the preset time is not more than 60 ° of electrical angles.
Preferably, the preset time is 100-200 microseconds.
The present invention provides a kind of modular multilevel half-bridge transverter, each bridges of modular multilevel half-bridge transverter
Arm includes N number of standard half bridge submodule, and each standard half bridge submodule includes first switch and the second switch, in first switch
The collector connection of IGBT in the emitter and second switch of IGBT；Each in upper bridge arm before from DC side to exchange side direction
Preceding N-1 standard half bridge submodule in N-1 standard half bridge submodule and each lower bridge arm from exchange side to direct current side direction
Block further includes third switch, and the collector of IGBT and the collector of IGBT in this mould first switch in the block connect during third switchs
It connects, the current collection of the emitter and IGBT in the adjacent first switch in the block compared with low potential standard half bridge submodule of IGBT in third switch
Pole connects；In upper bridge arm, standard half bridge submodule third in the block switch with it is adjacent in the block compared with low potential standard half bridge submodule
First switch complementation switching, in lower bridge arm, standard half bridge submodule third switch in the block is mutual with this mould first switch in the block
Mend switching.
As it can be seen that for modular multilevel half-bridge transverter provided by the invention, any one bridge arm always exists at one
Whole standard half bridge submodule meeting complete resection therein in 60 ° of electrical angles, in the process, IGBT in being switched due to third
It is closed, N number of standard half bridge submodule N number of electric capacity of voltage regulation in the block on the bridge arm can be in parallel respectively, finally so that all standards
Half-bridge submodule all pressed against the product of the capacitance and its voltage of N number of standard half bridge submodule and divided by capacitance count and, then
On the one hand, without reducing rated voltage modulation ratio rated voltage modulation ratio is greatly improved, in identical AC and DC in the present invention
Under rated voltage, reduces each bridge arm submodule quantity, greatly reduce cost.On the other hand, switching frequency is strictly kept
In power frequency, switching loss is made to minimize.It is pressed finally, due to which transverter submodule realizes nature, simplifies modulation algorithm, dropped
The low demand that control system is calculated in real time.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to institute in the prior art and embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of structural schematic diagram of modular multilevel half-bridge transverter in the prior art；
Fig. 2 is the structural representation of the standard half bridge submodule in a kind of modular multilevel half-bridge transverter that Fig. 1 is provided
Figure；
Fig. 3 is a kind of structural schematic diagram of standard half bridge submodule provided by the invention；
Fig. 4 is a kind of modular multilevel half-bridge using the standard half bridge submodule provided in Fig. 3 provided by the invention
Converter structure schematic diagram.
Specific implementation mode
Core of the invention is to provide a kind of modular multilevel half-bridge transverter, without reducing rated voltage modulation ratio,
Rated voltage modulation ratio is greatly improved, under identical AC and DC rated voltage, reduces each bridge arm submodule quantity,
Greatly reduce cost.On the other hand, switching frequency is strictly maintained at power frequency, and switching loss is made to minimize.Finally, due to the change of current
Device submodule realizes nature and presses, and simplifies modulation algorithm, reduces the demand calculated in real time control system.
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Please referring to Fig. 3 and Fig. 4, wherein Fig. 3 is a kind of structural schematic diagram of standard half bridge submodule provided by the invention,
Fig. 4 is a kind of modular multilevel half-bridge transverter knot using the standard half bridge submodule provided in Fig. 3 provided by the invention
Structure schematic diagram.
Each bridge arm of the modular multilevel half-bridge transverter includes N number of standard half bridge submodule, and N is not less than 2
Integer, each standard half bridge submodule includes first switch 1 and second switch 2, the emitter and of IGBT in first switch 1
The collector connection of IGBT in two switches 2；
From DC side to the preceding N-1 standard half bridge submodule of exchange side direction and each lower bridge arm in each upper bridge arm
In preceding N-1 standard half bridge submodule from exchange side to direct current side direction further include third switch 3, in third switch 3
The collector of IGBT is connect with the collector of IGBT in this mould first switch 1 in the block, in third switch 3 emitter of IGBT with
The collector connection of IGBT in the adjacent first switch 1 in the block compared with low potential standard half bridge submodule；In upper bridge arm, standard half bridge
Submodule third switch in the block 3 with adjacent compared with low potential standard half bridge submodule 1 complementary switching of first switch in the block, in lower bridge arm
In, standard half bridge submodule third switch 3 in the block and this mould 1 complementary switching of first switch in the block.
Firstly the need of explanation, the switch that is referred in the application is each meant to be made of IGBT and its anti-paralleled diode
Switch, first switch and the second switch complementation switching of each submodule, in addition, first switch 1 is closed and second switch 2 disconnects
Standard half bridge submodule where then indicating this two switches is put into, and first switch 1 disconnects and second switch 2 is closed then table
Standard half bridge submodule where showing this two switches is removed；In modulated process, the quantity of each phase input submodule is identical
In the quantity of excision submodule.
It is understood that control system is when being modulated transverter, exists in any one bridge arm and be not put into
When standard half bridge submodule, since the standard half bridge submodule not being put into third switch 3 in the block can be closed, to not be put into
Standard half bridge submodule electric capacity of voltage regulation in the block can be in parallel, then the standard half bridge submodule not being put at this time can be carried out from
Pressure, pressure value by capacitance and the product of its voltage and divided by capacitance count and determine.
In addition, for any one bridge arm, modulation algorithm can ensure, always exist in 360 ° of electric periods (0.02s)
One 60 ° of electrical angle (0.02s/6=0.0033s=3300us), all standard half bridge submodules excision on the bridge arm, then should
All standard half bridge submodules electric capacity of voltage regulation in the block on bridge arm is in parallel, in the electrical angle, all standards half on the bridge arm
Bridge submodule can be carried out from pressing, similarly, pressure value by capacitance and the product of its voltage and divided by capacitance count and determine,
I.e.：
Wherein, C1、C2…CNAll removed N number of standard half bridge submodule N number of electric capacity of voltage regulation in the block on a respectively bridge arm
Capacitance, U1、U2…UNThe voltage value at respectively above-mentioned N number of electric capacity of voltage regulation both ends.
In modulated process, each bridge arm carries out switch on-off in strict accordance with work frequency.
When direct current voltage across poles is with the ratio between voltage between phases maximum value is exchanged equal to 1, the switching of each bridge arm submodule is suitable
Sequence carries out (from top to bottom or from the bottom to top) according to the electrical connection of submodule sequence.
When direct current voltage across poles is with the ratio between voltage between phases maximum value is exchanged more than 1, bridge arm synthesizes needed for alternating voltage
Submodule will not cover several submodules near direct current positive and negative anodes, and in such situations, bridge arm puts into submodule and transported by step
Row makes the submodule of the bridge arm all put into after the submodule of direct current positive and negative anodes, will carry out a leapfrog operation, and
The submodule of up or down bridge arm corresponding to the bridge arm is set all to exit, when any phase carries out leapfrog operation, other two-phases are also same
Leapfrog operation equidirectional and with step number Shi Jinhang.
For concreteness illustrate below, it is assumed that there are 20 standard half bridge submodules on each bridge arm of the transverter,
Be followed successively by No. 1 to No. 20 from exchange side to direct current side direction because direct current voltage across poles with exchange the ratio between voltage between phases maximum value
When more than 1, the submodule needed for bridge arm synthesis alternating voltage will not need all submodules and participate in alternating voltage synthesis, because
This, it is assumed that the corresponding bridge arm input submodules of A are run to after the submodule of direct current positive and negative anodes by step namely A is opposite
The upper bridge arm answered 1-18 is put into, and lower bridge arm 1 and No. 2 are put into, and the corresponding upper bridge arms 1 of B and No. 2 are put into, lower bridge arm 1
It is put into No. 18, the corresponding upper bridge arms of C 1-10 are put into, and lower bridge arm 1 to 10 is put into, then carry out leapfrog fortune at this time
Row, other two-phases are also carried out at the same time equidirectional and with step number leapfrog operation, also i.e. by No. 19 in the corresponding upper bridge arms of A and
No. 20 are forced input, No. 3 and No. 4 in the corresponding upper bridge arms of B are forced input, by No. 11 in the corresponding upper bridge arms of C
Input is forced with No. 12, then the corresponding upper bridge arms of A 1-20 are put at this time, and lower bridge arm is all removed, on B is corresponding
Bridge arm 1 and No. 4 are put into, and lower bridge arm 1 and No. 16 are put into, and the corresponding upper bridge arms of C 1-12 are put into, lower bridge arm 1 to 8
It is put into, then the corresponding lower bridge arms of A press certainly.
Preferably, in each bridge arm, near the capacitance of the standard half bridge submodule electric capacity of voltage regulation in the block of exchange side
More than the capacitance of the standard half bridge submodule electric capacity of voltage regulation in the block near DC side, and two standards of arbitrary neighborhood therein are partly
In bridge submodule, the standard close to DC side is not less than close to the capacitance of the standard half bridge submodule electric capacity of voltage regulation in the block of exchange side
The capacitance of half-bridge submodule electric capacity of voltage regulation in the block.
It is understood that carrying out ensureing institute from also requirement while pressure to the standard half bridge submodule in transverter
Some electric capacity of voltage regulation will not be overcharged cross and be put.In practical application, the electric capacity of voltage regulation close to exchange side is easier to overcharge
It either crosses and puts and be then less susceptible to occur overcharging or cross to put close to the electric capacity of voltage regulation of DC side, therefore, for close to exchange side
Electric capacity of voltage regulation capacitance it is more demanding, for close to DC side electric capacity of voltage regulation capacitance require it is relatively low.
In the prior art in order to prevent electric capacity of voltage regulation overcharge or cross put be using multigroup standard half bridge submodule carry out
Rotation is connected and control system is required to carry out submodule voltage monitoring and rotation with 100 microseconds or shorter period.This is just
To the operational capability of control system, more stringent requirements are proposed.In addition, since modular multilevel half-bridge in the prior art changes
Stream device can not achieve from pressing, this requires the capacitance of all standard half bridge submodule electric capacity of voltage regulation in the block is equal, and due to leaning on
The capacitance of the electric capacity of voltage regulation of nearly DC side actually need not be too big, but is required very close to the capacitance of the electric capacity of voltage regulation of exchange side
Greatly, therefore, in order to which unified, all electric capacity of voltage regulation can only require highest, greatest requirements to configure according to the capacitance of exchange side, from
And considerably increase the capacitance total amount needed for entire bridge arm.
In the application, disposed using the submodule capacitance of non-equivalent to realize the inhibition of submodule voltage fluctuation, each height
The capacitance of module can make the capacitance of exchange side submodule according to the deployment for carrying out non-equivalent the characteristics of respective charge and discharge
More than the capacitance of DC side submodule.Namely the electric capacity of voltage regulation for selecting capacitance larger is applied to the standard half bridge close to exchange side
In submodule, and the electric capacity of voltage regulation for selecting capacitance smaller is applied in the standard half bridge submodule of DC side, to have
Effect prevents electric capacity of voltage regulation to occur overcharging or crossing the generation for the phenomenon that putting, also so that in same nominal electric current and submodule voltage
Under fluctuation, the non-equivalent capacitance deployment after optimization can reduce the capacitance total amount needed for entire bridge arm than equivalent capacitance deployment.
Preferably, in each bridge arm, N number of standard half bridge submodule N number of electric capacity of voltage regulation in the block is divided into M groups, wherein
M is the integer more than 2 and less than N, be followed successively by from exchange side to direct current side direction first group, second group ... up to M groups, every group
In electric capacity of voltage regulation capacitance it is equal, wherein the capacitance of the electric capacity of voltage regulation in first group in second group of the capacitance ＞ of electric capacity of voltage regulation
>=... the capacitance of the electric capacity of voltage regulation in >=M groups.
It should be noted that not done herein especially for N number of electric capacity of voltage regulation is specifically divided into several class present invention here
Restriction, determined according to actual conditions.
Preferably, M takes 4.
Preferably, M takes 5.
Certainly, M here can also take other numerical value, the present invention not to be particularly limited herein, according to actual conditions come
It is fixed.
Preferably, each standard half bridge submodule of each bridge arm further includes：
The voltage regulation resistance in parallel with electric capacity of voltage regulation；
Then all third switches 3 are only just synchronous when whole standard half bridge submodule complete resections on the bridge arm of place
It is closed, resynchronizes disconnection after keeping preset time, wherein preset time is not more than 60 ° of electrical angles.
Preferably, preset time is 100-200 microseconds.
It is understood that in practical engineering application, each standard half bridge submodule electric capacity of voltage regulation in the block is generally simultaneously
It is associated with equivalent equalizing resistance, resistance value is at tens kilo-ohms.During standard half bridge submodule is pressed, equalizing resistance can consume
Energy.
Therefore, in order to reduce energy loss and the submodule loss of voltage, all thirds limited here on single bridge arm are opened
Close 3 should only ability synchronizing close when all standard half bridge submodules of the bridge arm all exit, keep 100-200 microseconds
(can be depending on the time number of fields for pushing back road, the time is shorter, and the energy of equalizing resistance consumption is fewer), then resynchronisation separates.
Certainly, other times can also be kept here, as long as being no more than 60 ° of electrical angles.
The present invention provides a kind of modular multilevel half-bridge transverter, each bridges of modular multilevel half-bridge transverter
Arm includes N number of standard half bridge submodule, and each standard half bridge submodule includes first switch and the second switch, in first switch
The collector connection of IGBT in the emitter and second switch of IGBT；Each in upper bridge arm before from DC side to exchange side direction
Preceding N-1 standard half bridge submodule in N-1 standard half bridge submodule and each lower bridge arm from exchange side to direct current side direction
Block further includes third switch, and the collector of IGBT and the collector of IGBT in this mould first switch in the block connect during third switchs
It connects, the current collection of the emitter and IGBT in the adjacent first switch in the block compared with low potential standard half bridge submodule of IGBT in third switch
Pole connects；In upper bridge arm, standard half bridge submodule third in the block switch with it is adjacent in the block compared with low potential standard half bridge submodule
First switch complementation switching, in lower bridge arm, standard half bridge submodule third switch in the block is mutual with this mould first switch in the block
Mend switching.
As it can be seen that for modular multilevel half-bridge transverter provided by the invention, any one bridge arm always exists at one
Whole standard half bridge submodule meeting complete resection therein in 60 ° of electrical angles, in the process, IGBT in being switched due to third
It is closed, N number of standard half bridge submodule N number of electric capacity of voltage regulation in the block on the bridge arm can be in parallel respectively, finally so that all standards
Half-bridge submodule all pressed against the product of capacitance and its voltage and divided by capacitance count and, then on the one hand, the present invention is not necessarily to drop
Low rated voltage modulation ratio, is greatly improved rated voltage modulation ratio, under identical AC and DC rated voltage, reduces every
A bridge arm submodule quantity, greatly reduces cost.On the other hand, switching frequency is strictly maintained at power frequency, makes switching loss most
Smallization.It is pressed finally, due to which transverter submodule realizes nature, simplifies modulation algorithm, reduced real-time to control system
The demand of calculating.
It should be noted that in the present specification, relational terms such as first and second and the like are used merely to one
A entity or operation with another entity or operate distinguish, without necessarily requiring or implying these entities or operation it
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to
Cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or setting
Standby intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in the process, method, article or apparatus that includes the element.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (7)
1. a kind of modular multilevel half-bridge transverter, which is characterized in that each of described modular multilevel half-bridge transverter
Bridge arm includes N number of standard half bridge submodule, and N is the integer not less than 2, and each standard half bridge submodule is opened including first
It closes and second switch, the emitter of IGBT is connect with the collector of IGBT in the second switch in the first switch；
In each upper bridge arm from DC side in the preceding N-1 standard half bridge submodule of exchange side direction and each lower bridge arm from
The preceding N-1 standard half bridge submodule of exchange side to direct current side direction further includes third switch, IGBT in the third switch
Collector connect with the collector of IGBT in this mould first switch in the block, the emitter and phase of IGBT in third switch
Collector connection of the neighbour compared with IGBT in low potential standard half bridge submodule first switch in the block；In the upper bridge arm, the mark
Quasi-semibridge submodule third in the block switch with it is adjacent compared with low potential standard half bridge submodule first switch complementation switching in the block, in institute
It states in lower bridge arm, the standard half bridge submodule third switch in the block and this mould first switch complementation switching in the block.
2. modular multilevel half-bridge transverter as described in claim 1, which is characterized in that in each bridge arm, near inbreeding
The capacitance for flowing the standard half bridge submodule electric capacity of voltage regulation in the block of side is in the block steady more than the standard half bridge submodule near DC side
The capacitance of voltage capacitance, and in two standard half bridge submodules of arbitrary neighborhood therein, close to the standard half bridge submodule of exchange side
In electric capacity of voltage regulation capacitance be not less than close to DC side standard half bridge submodule electric capacity of voltage regulation in the block capacitance.
3. modular multilevel half-bridge transverter as claimed in claim 2, which is characterized in that in each bridge arm, N number of standard half
Bridge submodule N number of electric capacity of voltage regulation in the block is divided into M groups, wherein M is the integer more than 2 and less than N, from exchange side to DC side
Direction be followed successively by first group, second group ... until M groups, the capacitance of the electric capacity of voltage regulation in every group is equal, wherein steady in first group
The capacitance of electric capacity of voltage regulation in second group of the capacitance ＞ of voltage capacitance >=... the capacitance of the electric capacity of voltage regulation in >=M groups.
4. modular multilevel half-bridge transverter as claimed in claim 3, which is characterized in that M takes 4.
5. modular multilevel half-bridge transverter as claimed in claim 3, which is characterized in that M takes 5.
6. such as claim 2-5 any one of them modular multilevel half-bridge transverters, which is characterized in that each bridge arm it is every
A standard half bridge submodule further includes：
The voltage regulation resistance in parallel with the electric capacity of voltage regulation；
Then all third switches only ability synchronizing close when whole standard half bridge submodule complete resections on the bridge arm of place,
Disconnection is resynchronized after keeping preset time, wherein the preset time is not more than 60 ° of electrical angles.
7. modular multilevel half-bridge transverter as claimed in claim 6, which is characterized in that the preset time is 100-
200 microseconds.
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| CN105375801A (en) * | 2015-10-30 | 2016-03-02 | 南方电网科学研究院有限责任公司 | Modular multilevel converter voltage-sharing control method |
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