CN106300922B - A kind of high temperature driven protective device - Google Patents
A kind of high temperature driven protective device Download PDFInfo
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- CN106300922B CN106300922B CN201510303056.9A CN201510303056A CN106300922B CN 106300922 B CN106300922 B CN 106300922B CN 201510303056 A CN201510303056 A CN 201510303056A CN 106300922 B CN106300922 B CN 106300922B
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- power device
- circuit
- module
- drive module
- device drive
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- 230000001681 protective effect Effects 0.000 title claims abstract description 19
- 238000005057 refrigeration Methods 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 12
- 230000005669 field effect Effects 0.000 claims abstract description 11
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 9
- 230000003750 conditioning effect Effects 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 230000005611 electricity Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention provides a kind of high temperature driven protective devices, including power device drive module and refrigeration module；Refrigeration module has two pieces, is separately positioned on the two sides of power device drive module；Power device drive module, for driving and guaranteeing that power device works normally；Refrigeration module, for radiating to power device drive module.Compared with prior art; a kind of high temperature driven protective device provided by the invention; the method design combined using semiconductor refrigerating technology and silicon-based semiconductor integrated circuit technique; can effective guarantee silicon-based semiconductor integrated circuit work normally in a high temperauture environment, so that high-temperature carborundum power field effect pipe constant power device is obtained good driving and protection.
Description
Technical field
The present invention relates to power electronics to protect field, and in particular to a kind of high temperature driven protective device.
Background technique
Sic semiconductor device has switching speed is high, turns off high pressure resistant, temperature to be resistant to high excellent properties, extremely suitable
Close the applied power electronics under hot environment.With the fast development of manufacturing process, device high pressure tolerance, switching speed are
Rapid promotion is obtained, higher device temperature ability to work starts the focus as research, it is believed that high-temperature device also will be rapid
Occur.
In existing silicon carbide device, the application being suitble to the most under hot environment with field-effect tube, in order to make full use of carbonization
The hot operation potentiality of silicon power field effect pipe, it is desirable to be able to be equally used for the Drive Protecting Circuit cooperating of hot environment.
However, having no silicon carbide integrated circuit product on market today since silicon carbide integrated circuit technology is not yet mature, still need to use
Silicon integrated circuit constructs Drive Protecting Circuit.But since the characteristic of semiconductor of silicon determines that silicon integrated circuit can not be applied to
In hot environment, the Drive Protecting Circuit based on silicon integrated circuit is only 85 degrees Celsius in the market now, can not be taken the photograph being higher than 85
The silicon carbide power field-effect tube for driving working junction temperature to may be up to 250 degrees Celsius under the environment temperature of family name's degree.Therefore it needs to provide
A kind of high-temperature carborundum power field effect pipe driving protective device that existing silicon device can be used, makes high-temperature carborundum power field
Effect is in control good driving and protection.
Summary of the invention
In order to meet the needs of the prior art, the present invention provides a kind of high temperature driven protective devices.
The technical solution of the present invention is as follows:
Described device includes power device drive module and refrigeration module；The refrigeration module has two pieces, is separately positioned on
On the two sides of power device drive module；
The power device drive module, for driving and guaranteeing that power device works normally；
The refrigeration module, for radiating to power device drive module.
Preferably, the refrigeration module in the contact side of the power device drive module and refrigeration module with should
Metal shell is provided on the corresponding side in contact side, the metal shell is for thermally conductive；
Preferably, the side of described device is provided with high-temperature heat insulation silica gel, for being sealed to device；
Preferably, the power device drive module is fixed between two locating grooves；
Preferably, the refrigeration module is high temperature semiconductors refrigeration module；
Preferably, the power device drive module is silicon substrate integration module；
Preferably, the power device drive module, including input port, output port and sequentially connected signal
Conditioning circuit, signal isolation circuit and driving circuit；
The signal conditioning circuit is connect with input port, and a branch of driving circuit is connect with output port, another
Branch is also connected with detection circuit between protection circuit and the output port by protecting circuit to connect with output port；
The current signal of the detection circuit acquisition power device, sends protection circuit for the current signal；
The protection circuit, judge the current signal whether be more than power device output-current rating, if be more than if
Power device block signal is sent to driving circuit, prevents power device from overcurrent damage occurs；
Preferably, the power device drive module further includes sequentially connected temperature observation circuit, refrigeration module control
Circuit and DCDC Switching Power Supply, the DCDC Switching Power Supply are connect with input port；
The temperature observation circuit, for acquiring the temperature value inside power device drive module, and by the temperature value
It is sent to refrigeration module control circuit；
The refrigeration module control circuit, the temperature value and temperature threshold, the temperature difference adjustment according to the two
The voltage output value of DCDC Switching Power Supply；
The DCDC Switching Power Supply, the voltage signal output it are sent to refrigeration module, and refrigeration module is according to the electricity
Pressure signal realizes that heat inversely transmits, will be in the external environment of the heat transfer of power device drive module to described device；
Preferably, the power device drive module further includes the DCDC isolated power supply connecting with input port, described
DCDC isolated power supply is powered to driving circuit, protection circuit, detection circuit and DCDC Switching Power Supply.
Compared with the immediate prior art, the excellent effect of the present invention is that:
A kind of high temperature driven protective device provided by the invention, the characteristics of making full use of semiconductor refrigerating technology, in high temperature
Reverse heat transmitting is carried out in environment, is promoted the radiating efficiency of whole driving protective device, is simplified apparatus structure, reduce device
Semiconductor refrigerating module is combined with power device drive module, is extremely applicable to silicon carbide power under hot environment by volume
The application of field-effect tube driving protective device；
A kind of high temperature driven protective device provided by the invention, the characteristics of making full use of power device drive module, will half
The control circuit part of conductor refrigeration module and power device drive module are integrated on same circuit board, real-time monitoring power device
The operating ambient temperature of part drive module, and the temperature of the working environment is adjusted by controlling semiconductor refrigerating module, it is extremely suitable
Inner casing environment temperature control for silicon carbide power field-effect tube driving protective device under hot environment.
Detailed description of the invention
The following further describes the present invention with reference to the drawings.
A kind of Fig. 1: high temperature driven protective device schematic diagram in the embodiment of the present invention；
A kind of Fig. 2: high temperature driven protective device front view in the embodiment of the present invention；
A kind of Fig. 3: high temperature driven protective device top view in the embodiment of the present invention；
A kind of Fig. 4: high temperature driven protective device side view in the embodiment of the present invention；
Fig. 5: power device drive module circuit diagram in the embodiment of the present invention；
Wherein, 1: metal shell；2: locating groove；3: metal shell；4: input port；5: output port；6: power supply supplies
Electric wire.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
A kind of high temperature driven protective device provided by the invention, using semiconductor refrigerating technology and the integrated electricity of silicon-based semiconductor
The design of method that road technique combines, can effective guarantee silicon-based semiconductor integrated circuit work normally in a high temperauture environment,
High-temperature carborundum power field effect pipe constant power device is set to obtain good driving and protection.
One, the specific structure of the present embodiment high temperature driving protective device are as follows:
As shown in Figure 1, the device includes power device drive module and refrigeration module.
Wherein, refrigeration module has two pieces, is separately positioned on the two sides of power device drive module, refrigeration module and function
It is provided on side corresponding with the contact side for thermally conductive in the contact side of rate device drive module and refrigeration module
Metal shell, metal shell 1 and metal shell 3 as shown in Figure 1.
As shown in Fig. 2,3 and 4, the side of described device is provided with high-temperature heat insulation silica gel, for being sealed to device.
Power device drive module is fixed between two locating grooves 2, for driving and guaranteeing the normal work of power device
Make；
Refrigeration module, for radiating to power device drive module.
1, power drive device module
As shown in figure 5, power drive device module include input port 4, output port 5, signal conditioning circuit, signal every
From circuit, driving circuit, temperature observation circuit, refrigeration module control circuit, DCDC Switching Power Supply and DCDC isolated power supply.Specifically
Connection relationship are as follows:
(1) signal conditioning circuit, signal isolation circuit and driving circuit are sequentially connected, in which:
Signal conditioning circuit is connect with input port 4；
One branch of driving circuit is connect with output port 5, and another branch is connected by protection circuit and output port 5
It connects, protects and be also connected with detection circuit between circuit and output port 5.
Detection circuit acquires the current signal of power device, sends protection circuit for current signal；Protect circuit, judgement
Current signal whether be more than power device output-current rating, if be more than if to driving circuit send power device locking letter
Number, prevent power device from overcurrent damage occurs.
(2) temperature observation circuit, refrigeration module control circuit and DCDC Switching Power Supply are sequentially connected, in which:
DCDC Switching Power Supply is connect with input port, and DCDC isolated power supply is connect with input port.
Temperature observation circuit is sent to system for acquiring the temperature value inside power device drive module, and by temperature value
Cold module control circuit；Temperature observation circuit includes temperature sensor in the present embodiment, acquires metal shell 1 and metal shell 3
Form the internal temperature of shell.
Refrigeration module control circuit, comparison temperature value and temperature threshold, the temperature difference adjustment DCDC switch electricity according to the two
The voltage output value in source；Temperature threshold in the present embodiment refers to guaranteeing that power device drive module normal work is able to bear
Maximum temperature values.
DCDC Switching Power Supply, the voltage signal output it are sent to refrigeration module, and refrigeration module is real according to voltage signal
Existing heat inversely transmits, will be in the external environment of the heat transfer of power device drive module to device.
DCDC isolated power supply is powered to driving circuit, protection circuit, detection circuit and DCDC Switching Power Supply.
In the present embodiment, power device drive module is silicon substrate integration module.
2, refrigeration module
In the present embodiment, refrigeration module is high temperature semiconductors refrigeration module, and high temperature semiconductors refrigeration module makes full use of half
Can inversely the conducting heat of conductor Refrigeration Technique, high reliablity, the feature that control is easy, structure is simple, for can not hot operation silicon
Base integrated circuit, that is, power device drive module provides suitable operating temperature, makes the carbon based on traditional silicon base integrated circuit technique
The Drive Protecting Circuit of SiClx power field effect pipe constant power device can be the same as the silicon carbide constant power device work in high temperature together
Make.
As shown in Figure 1, hot end of contact side of the metal shell 1 with refrigeration module for it, metal shell 3 and refrigeration module
Contact side is its cold end, and when the temperature of metal shell 1 is higher than the temperature of hot environment, metal shell 1 is positive to hot environment
Heat is transmitted, therefore by the reverse heat transfer principle of refrigeration module, can still ensure that power drive device module is being far below
The desired operating temperatures that high temperature is changed work normally.Refrigeration module absorbs heat from low temperature side, discharges heat to high temperature side, effectively
The burden for alleviating other refrigeration systems, improves refrigerating efficiency, avoids conventional liquid chiller system and transports in the high temperature environment
Row, while absorbing heat from low temperature side and hot environment and passing through the process of liquid-circulating heat radiation again.
The temperature of hot environment is set in the present embodiment as 125~175 DEG C, the temperature that power drive device module works normally
Degree is 25~85 DEG C.
Finally it should be noted that: described embodiment is only some embodiments of the present application, rather than whole realities
Apply example.Based on the embodiment in the application, those of ordinary skill in the art are obtained without making creative work
Every other embodiment, shall fall in the protection scope of this application.
Claims (3)
1. a kind of high-temperature carborundum power field effect pipe drives protective device, which is characterized in that described device includes power device
Drive module and refrigeration module；The refrigeration module has two pieces, is separately positioned on the two sides of power device drive module；
The power device drive module, for driving and guaranteeing that power device works normally；
The refrigeration module, for radiating to power device drive module；The refrigeration module is high temperature semiconductors refrigeration module；
The side of described device is provided with high-temperature heat insulation silica gel, for being sealed to device；
The power device drive module is fixed between two locating grooves；
The power device drive module is silicon substrate integration module；
The power device drive module, including input port, output port and sequentially connected signal conditioning circuit, letter
Number isolation circuit and driving circuit；
Signal conditioning circuit is connect with the input port, and a branch of driving circuit is connect with the output port, another
Branch is also connected with detection circuit between protection circuit and the output port by protecting circuit to connect with output port；
The current signal of the detection circuit acquisition power device, sends protection circuit for the current signal；
The protection circuit, judge the current signal whether be more than power device output-current rating, to drive if being more than
Dynamic circuit sends power device block signal, prevents power device from overcurrent damage occurs；
The power device drive module further includes sequentially connected temperature observation circuit, refrigeration module control circuit and DCDC
Switching Power Supply, the DCDC Switching Power Supply are connect with input port；
The temperature observation circuit is sent for acquiring the temperature value inside power device drive module, and by the temperature value
To refrigeration module control circuit；
The refrigeration module control circuit, the temperature value and temperature threshold, the temperature difference adjustment DCDC according to the two are opened
The voltage output value in powered-down source；The control circuit and the power device drive module are integrated on same circuit board；
The DCDC Switching Power Supply, the voltage signal output it are sent to refrigeration module, and refrigeration module is believed according to the voltage
Number realize heat inversely transmit, will be in the external environment of the heat transfer of power device drive module to described device.
2. device as described in claim 1, which is characterized in that the refrigeration module connects with the power device drive module
Metal shell is provided in touching side and refrigeration module on side corresponding with the contact side, the metal shell is for leading
Heat.
3. device as described in claim 1, which is characterized in that the power device drive module further includes and input port
The DCDC isolated power supply of connection, the DCDC isolated power supply is to driving circuit, protection circuit, detection circuit and DCDC Switching Power Supply
Power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510303056.9A CN106300922B (en) | 2015-06-04 | 2015-06-04 | A kind of high temperature driven protective device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510303056.9A CN106300922B (en) | 2015-06-04 | 2015-06-04 | A kind of high temperature driven protective device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106300922A CN106300922A (en) | 2017-01-04 |
| CN106300922B true CN106300922B (en) | 2019-08-06 |
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ID=57656608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510303056.9A Active CN106300922B (en) | 2015-06-04 | 2015-06-04 | A kind of high temperature driven protective device |
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| Country | Link |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112540634A (en) * | 2019-09-20 | 2021-03-23 | 触景无限科技（北京）有限公司 | Heating system for low-temperature heating of electronic equipment and electronic equipment thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010283932A (en) * | 2009-06-02 | 2010-12-16 | Honda Motor Co Ltd | Controller for load-driving system |
| CN102931818A (en) * | 2012-10-24 | 2013-02-13 | 广东美的暖通设备有限公司 | Frequency conversion module heat abstractor and air conditioner |
| CN104180576A (en) * | 2014-09-03 | 2014-12-03 | 四川航天***工程研究所 | Low-temperature semiconductor refrigerator and method for providing linear voltage for chilling plates of refrigerator |
| CN104656696A (en) * | 2013-11-18 | 2015-05-27 | 西安丁子电子信息科技有限公司 | High temperature environment-resisting circuit board system |
| CN104682676A (en) * | 2013-11-28 | 2015-06-03 | 北车大连电力牵引研发中心有限公司 | IGBT (Insulated Gate Bipolar Translator) driving protection circuit |
-
2015
- 2015-06-04 CN CN201510303056.9A patent/CN106300922B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010283932A (en) * | 2009-06-02 | 2010-12-16 | Honda Motor Co Ltd | Controller for load-driving system |
| CN102931818A (en) * | 2012-10-24 | 2013-02-13 | 广东美的暖通设备有限公司 | Frequency conversion module heat abstractor and air conditioner |
| CN104656696A (en) * | 2013-11-18 | 2015-05-27 | 西安丁子电子信息科技有限公司 | High temperature environment-resisting circuit board system |
| CN104682676A (en) * | 2013-11-28 | 2015-06-03 | 北车大连电力牵引研发中心有限公司 | IGBT (Insulated Gate Bipolar Translator) driving protection circuit |
| CN104180576A (en) * | 2014-09-03 | 2014-12-03 | 四川航天***工程研究所 | Low-temperature semiconductor refrigerator and method for providing linear voltage for chilling plates of refrigerator |
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| Publication number | Publication date |
|---|---|
| CN106300922A (en) | 2017-01-04 |
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