CN106299124A - Based on CH3nH3pbI3nmos device of material and preparation method thereof - Google Patents
Based on CH3nH3pbI3nmos device of material and preparation method thereof Download PDFInfo
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- CN106299124A CN106299124A CN201610763995.6A CN201610763995A CN106299124A CN 106299124 A CN106299124 A CN 106299124A CN 201610763995 A CN201610763995 A CN 201610763995A CN 106299124 A CN106299124 A CN 106299124A
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- electron transfer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/20—Organic diodes
Abstract
The present invention relates to a kind of based on CH3NH3PbI3Nmos device of material and preparation method thereof, the method includes: choose Si substrate；Gate dielectric layer is grown at Si substrate surface；At gate dielectric layer superficial growth electron transfer layer；At electron transfer layer superficial growth CH3NH3PbI3Material forms light absorbing zone；Form source-drain electrode at electron transfer layer superficial growth Au material, ultimately form nmos device.Owing to the transistor of the present invention uses electron transfer layer transmission electronic blocking hole, overcome employing CH in prior art3NH3PbI3MOSFET optical electric field effect transistor in electron-hole recombinations, the shortcoming that photoelectric transformation efficiency is low, i.e. transistor use by CH3NH3PbI3Thering is provided substantial amounts of electronics to raceway groove, form N-shaped MOSFET optical electric field effect transistor, have driving power little, switching speed is fast, the advantage that photoelectric transformation efficiency is big.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly to one based on CH3NH3PbI3The nmos device of material and
Its preparation method.
Background technology
Semiconductor integrated circuit is the basis of electronics industry, people's great demand to electronics industry, has promoted this field
Develop rapidly.In the past few decades, social development and national economy are all created huge by the fast development of electronics industry
Big impact.Semiconductor integrated circuit follows the development of Moore law always, i.e. when price is constant, integrated circuit can hold
The number of the components and parts received, about will double every 18-24 month, and performance also will promote one times.In other words, each dollar
The computer performance that can have bought, will double above every 18-24 month.Until today, Moore law still plays to be made
With.
Organic/inorganic perovskite (CH3NH3PbI3) organic/inorganic molecule can be allowed to carry out orderly combination, by the two
Advantage is combined in a molecular complex, obtains the crystal structure of long-range order.The crystal structure of inorganic component and hard frame
Frame, is provided that the good heat stability of high mobility, and organic principle provides by dividing with extremely strong covalent bond or ionic bond
Son cuts out change photoelectric properties and good self assembly and film forming characteristics, enables hydridization perovskite material to carry out low temperature and low
Cost adds, and can prepare thin-film device by technology such as simple rotary coating, dip coated, vacuum evaporations.
Based on tradition CH3NH3PbI3The optical electric field effect transistor (MOSFET) of material is as semiconductor integrated circuit base
This device unit, due to CH3NH3PbI3Electron-hole recombinations is there is in material when receiving optical signal, so that opto-electronic conversion effect
Rate is substantially reduced, and significantly impacts MOSFET optical electric field field effect transistor devices device performance.
Summary of the invention
Therefore, for solving technological deficiency and the deficiency that prior art exists, the present invention proposes a kind of based on CH3NH3PbI3Material
Nmos device of material and preparation method thereof.
Specifically, the one that one embodiment of the invention proposes is based on CH3NH3PbI3The preparation side of the nmos device of material
Method, including:
S101, to choose doping content be 1 × 1020cm-3P-type Si substrate；
S102, utilize thermal oxidation technology described Si substrate top surface grow SiO2Material forms gate dielectric layer；
Magnetron sputtering apparatus cavity is carried out by S103, employing argon；
S104, utilize magnetron sputtering technique at described SiO2Material surface growth TiO2Material forms electron transfer layer；
S105, use the first mask plate, utilize single spin coating proceeding at described TiO2Material surface spin coating CH3NH3PbI3Material
Material forms light absorbing zone；
S106, utilize magnetron sputtering technique described Si substrate lower surface sputtering Al material formed back electrode；
S107, use the second mask plate, utilize magnetron sputtering technique to sputter Au material on described electron transport layer materials surface
Material forms source-drain electrode, ultimately forms described based on CH3NH3PbI3The nmos device of material.
The one that another embodiment of the present invention proposes is based on CH3NH3PbI3The nmos device of material, including: Si substrate,
Gate dielectric layer, electron transfer layer, light absorbing zone, back electrode and source-drain electrode；Wherein, described electron transfer layer is by CH3NH3PbI3
Material is formed, and described based on CH3NH3PbI3The method preparation that the nmos device of material is provided by above-described embodiment is formed.
The one that further embodiment of the present invention proposes is based on CH3NH3PbI3The preparation method of the nmos device of material, bag
Include:
Choose Si substrate；
Gate dielectric layer is grown at described Si substrate surface；
At described gate dielectric layer superficial growth electron transfer layer；
At described electron transfer layer superficial growth CH3NH3PbI3Material forms light absorbing zone；
Form source-drain electrode at described electron transfer layer superficial growth Au material, ultimately form described based on CH3NH3PbI3
The nmos device of material.
In one embodiment of the invention, at described gate dielectric layer superficial growth electron transfer layer, including:
Utilize magnetron sputtering technique at described gate dielectric layer superficial growth TiO2Material forms electron transfer layer.
In one embodiment of the invention, utilize magnetron sputtering technique at described gate dielectric layer superficial growth TiO2Material
Form electron transfer layer, including:
The TiO using target to be purity Coriolis mass percentage ratio 99.99%2Target, target diameter is 60mm, and thickness is 5mm, takes out true
Sky, base vacuum is 4.0 × 10-3Pa, is passed through argon and oxygen successively, by regulation flow-control argon and the volume ratio of oxygen
For 9:1, total pressure remains 2.0Pa, and sputtering power is 80W, and growth forms described TiO2Material；
Through the annealing of 70 DEG C to 150 DEG C, form described electron transfer layer.
In one embodiment of the invention, at described electron transfer layer superficial growth CH3NH3PbI3Material forms light and inhales
Receive layer, including:
Use mask plate, utilize single spin coating proceeding at described electron transfer layer surface spin coating CH3NH3PbI3Material is formed
Light absorbing zone.
In one embodiment of the invention, use the first mask plate, utilize single spin coating proceeding in described electric transmission
Layer surface spin coating CH3NH3PbI3Material forms light absorbing zone, including:
By the PbI of 654mg2CH with 217mg3NH3I successively adds in DMSO:GBL, obtains PbI2And CH3NH3The mixing of I
Solution；
By PbI2And CH3NH3The mixed solution of I stirs two hours at 80 degrees celsius, by Celsius 80 for the solution after stirring
Degree stands 1 hour, obtains CH3NH3PbI3Solution；
By CH3NH3PbI3Solution drips described electron transfer layer, uses described first mask plate area of isolation, uses sol evenning machine
Spin coating is uniform, anneals 20 minutes, form described light absorbing zone under 100 degrees Celsius.
In one embodiment of the invention, at described electron transfer layer superficial growth CH3NH3PbI3Material forms light and inhales
After receiving layer, also include:
Magnetron sputtering technique is utilized to form back electrode at described Si substrate lower surface sputtering Al material.
In one embodiment of the invention, source-drain electrode, bag are formed at described electron transfer layer superficial growth Au material
Include:
Use the second mask plate to isolate described light absorbing zone on described electron transfer layer surface；
Sputtering target material selects quality than purity > Au of 99.99%, with the Ar material that mass percent purity is 99.999%
It is passed through sputtering chamber as sputter gas, is 4.0 × 10 in vacuum-4Pa, argon flow amount are 20cm3/ second, target cardinal distance are 10cm
Under conditions of being 1A with operating current, preparation forms described source-drain electrode.
The one that another embodiment of the present invention proposes is based on CH3NH3PbI3The nmos device of material, including: Si substrate,
Gate dielectric layer, electron transfer layer, light absorbing zone and source-drain electrode；Wherein, described based on CH3NH3PbI3The nmos device of material by
Method preparation described in above-described embodiment is formed.
Based on this, the present invention possesses following advantage:
Owing to the transistor of the present invention uses electron transfer layer transmission electronic blocking hole, overcome in prior art and use
CH3NH3PbI3MOSFET optical electric field effect transistor in electron-hole recombinations, the shortcoming that photoelectric transformation efficiency is low.
The transistor of the present invention uses by CH3NH3PbI3There is provided substantial amounts of electronics to raceway groove, form N-shaped MOSFET optical electric field
Effect transistor, has driving power little, and switching speed is fast, the advantage that photoelectric transformation efficiency is big.
By the detailed description below with reference to accompanying drawing, the other side of the present invention and feature become obvious.But should know
Road, this accompanying drawing is only the purpose design rather than the restriction as the scope of the present invention explained, this is because it should refer to
Appended claims.It should also be noted that unless otherwise noted, it is not necessary to scale accompanying drawing, they only try hard to concept
Ground illustrates structure described herein and flow process.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the detailed description of the invention of the present invention is described in detail.
The one that Fig. 1 provides for the embodiment of the present invention is based on CH3NH3PbI3The signal of the nmos device preparation method of material
Figure；
The one that Fig. 2 provides for the embodiment of the present invention is based on CH3NH3PbI3The schematic cross-section of the nmos device of material；
The one that Fig. 3 provides for the embodiment of the present invention is based on CH3NH3PbI3The top view of the nmos device of material；
The structural representation of a kind of first mask plate that Fig. 4 provides for the embodiment of the present invention；
The structural representation of a kind of second mask plate that Fig. 5 provides for the embodiment of the present invention.
Detailed description of the invention
Understandable, below in conjunction with the accompanying drawings to the present invention for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
Detailed description of the invention be described in detail.
Embodiment one
Refer to one that Fig. 1, Fig. 1 provide for the embodiment of the present invention based on CH3NH3PbI3Prepared by the nmos device of material
The schematic diagram of method.The method comprises the steps:
Step a, choose Si substrate；
Step b, described Si substrate surface grow gate dielectric layer；
Step c, at described gate dielectric layer superficial growth electron transfer layer；
Step d, at described electron transfer layer superficial growth CH3NH3PbI3Material forms light absorbing zone；
Step e, form source-drain electrode at described electron transfer layer superficial growth Au material, ultimately form described based on
CH3NH3PbI3The nmos device of material.
Wherein, step c may include that
Utilize magnetron sputtering technique at described gate dielectric layer superficial growth TiO2Material forms electron transfer layer.
Further, step c may include that
Step c1, the TiO using target to be purity Coriolis mass percentage ratio 99.99%2Target, target diameter is 60mm, and thickness is
5mm, evacuation, base vacuum is 4.0 × 10-3Pa, is passed through argon and oxygen successively, by regulation flow-control argon and oxygen
Volume ratio be 9:1, total pressure remains 2.0Pa, and sputtering power is 80W, growth formed described TiO2Material；
Step c2, through the annealings of 70 DEG C to 150 DEG C, form described electron transfer layer.
It addition, step d may include that
Use mask plate, utilize single spin coating proceeding at described electron transfer layer surface spin coating CH3NH3PbI3Material is formed
Light absorbing zone.
Further, step d may include that
Step d1, by the PbI of 654mg2CH with 217mg3NH3I successively adds in DMSO:GBL, obtains PbI2With
CH3NH3The mixed solution of I；
Step d2, by PbI2And CH3NH3The mixed solution of I stirs two hours at 80 degrees celsius, by the solution after stirring
Stand 1 hour at 80 degrees Celsius, obtain CH3NH3PbI3Solution；
Step d3, by CH3NH3PbI3Solution drips described electron transfer layer, uses described first mask plate area of isolation,
Uniform with sol evenning machine spin coating, anneal 20 minutes under 100 degrees Celsius, form described light absorbing zone.
It addition, after step d, it is also possible to including:
Step x, utilize magnetron sputtering technique described Si substrate lower surface sputtering Al material formed back electrode.
It addition, step e can include；
Step e1, use on described electron transfer layer surface second mask plate isolate described light absorbing zone；
Step e2, sputtering target material select quality than purity > Au of 99.99%, with mass percent purity for 99.999%
Ar material be passed through sputtering chamber as sputter gas, be 4.0 × 10 in vacuum-4Pa, argon flow amount are 20cm3/ second, target base
Under conditions of being 1A for 10cm and operating current, preparation forms described source-drain electrode.
Beneficial effects of the present invention particularly as follows:
Owing to the transistor of the present invention uses electron transfer layer transmission electronic blocking hole, overcome in prior art and use
CH3NH3PbI3MOSFET optical electric field effect transistor in electron-hole recombinations, the shortcoming that photoelectric transformation efficiency is low.
Embodiment two
Refer to one that Fig. 2, Fig. 2 provide for the embodiment of the present invention based on CH3NH3PbI3Cutting of the nmos device of material
Face schematic diagram.Should be based on CH3NH3PbI3The nmos device of material includes: back electrode 1, Si substrate 2, gate dielectric layer 3, electric transmission
Layer 4, light absorbing zone 5, source-drain electrode 6；Wherein, described based on CH3NH3PbI3The nmos device of material is by described in above-described embodiment
Method preparation formed.
The transistor of the present invention uses by CH3NH3PbI3There is provided substantial amounts of electronics to raceway groove, form N-shaped MOSFET optical electric field
Effect transistor, has driving power little, and switching speed is fast, the advantage that photoelectric transformation efficiency is big.
Embodiment three
Please also refer to Fig. 3, Fig. 4 and Fig. 5, the one that Fig. 3 provides for the embodiment of the present invention is based on CH3NH3PbI3Material
The top view of nmos device；The structural representation of a kind of first mask plate that Fig. 4 provides for the embodiment of the present invention；Fig. 5 is this
The structural representation of a kind of second mask plate that bright embodiment provides.The present embodiment is on the basis of above-described embodiment, to this
Bright technical scheme is described in detail.Specifically, the method may include that
Step 1: preparing substrate silicon.
Prepare body silicon materials；Described body silicon materials include substrate layer, and wherein substrate layer is heavily doped silicon, and doping content is 1
×1020cm-3。
Step 2: thermal oxide SiO2。
Use the body silicon materials superficial growth SiO that thermal oxidation technology is prepared in step 12Oxide layer.
Step 3: magnetron sputtering TiO2。
Target is the TiO of purity Coriolis mass percentage ratio 99.99%2Target, target diameter is 60mm, and thickness is 5mm, before sputtering, uses
Magnetron sputtering apparatus cavity is carried out 5 minutes cleaning by high-purity argon gas, and then evacuation, base vacuum is 4.0 × 10-3Pa, subsequently
Being passed through argon and oxygen successively, be 9:1 by the volume ratio of regulation flow-control argon and oxygen, total pressure remains 2.0Pa,
Sputtering power is 80W, grows after terminating again through the annealing of 70 DEG C to 150 DEG C, thus at SiO2TiO is prepared in oxide layer2
Electron transfer layer.
Step 4: spin coating CH3NH3PbI3。
Use single spin-coating method in step 3 gained TiO2The first mask plate isolation spin coating is used on electron transfer layer
CH3NH3PbI3Light absorbing zone, by the PbI of 654mg2CH with 217mg3NH3I successively adds in DMSO:GBL, obtains PbI2With
CH3NH3The mixed solution of I；By PbI2And CH3NH3The mixed solution of I stirs two hours, after being stirred at 80 degrees celsius
Solution；Solution after stirring is stood 1 hour at 80 degrees Celsius, obtains CH3NH3PbI3Solution；By CH3NH3PbI3Solution drips
TiO to step 3 gained2On thin film, use the first mask plate area of isolation, uniform with sol evenning machine spin coating, under 100 degrees Celsius
Anneal 20 minutes, form CH3NH3PbI3Light absorbing zone.
Step 5: growth backplate Al.
Using silicon substrate back spatter electrode A l that magnetron sputtering technique is prepared in step 1, sputtering target material selects quality
Than purity > aluminum of 99.99%, it is passed through sputtering chamber using the Ar that mass percent purity is 99.999% as sputter gas, very
Reciprocal of duty cycle is 4.0 × 10-4Pa, argon flow amount are 20cm3Under conditions of/second, target cardinal distance are 10cm and operating current is 1A, preparation
Back electrode aluminum.
Step 6: growth source drain electrode Au.
In the TiO that step 3 is prepared2The second mask plate isolation CH is used on thin film3NH3PbI3Light absorbing zone, sputters subsequently
Front electrode Au.Sputtering target material selects quality than purity > gold of 99.99% is the Ar of 99.999% with mass percent purity
It is passed through sputtering chamber as sputter gas, is 4.0 × 10 in vacuum-4Pa, argon flow amount are 20cm3/ second, target cardinal distance are 10cm
Under conditions of being 1A with operating current, prepare source-drain electrode gold.
In sum, specific case used herein to the present invention based on CH3NH3PbI3The nmos device of material and
Principle and the embodiment of preparation method are set forth, and the explanation of above example is only intended to help to understand the side of the present invention
Method and core concept thereof；Simultaneously for one of ordinary skill in the art, according to the thought of the present invention, in detailed description of the invention
And all will change in range of application, in sum, this specification content should not be construed as limitation of the present invention, this
Bright protection domain should be as the criterion with appended claim.
Claims (10)
1. one kind based on CH3NH3PbI3The preparation method of the nmos device of material, it is characterised in that including:
S101, to choose doping content be 1 × 1020cm-3P-type Si substrate；
S102, utilize thermal oxidation technology described Si substrate top surface grow SiO2Material forms gate dielectric layer；
Magnetron sputtering apparatus cavity is carried out by S103, employing argon；
S104, utilize magnetron sputtering technique at described SiO2Material surface growth TiO2Material forms electron transfer layer；
S105, use the first mask plate, utilize single spin coating proceeding at described TiO2Material surface spin coating CH3NH3PbI3Material shape
Become light absorbing zone；
S106, utilize magnetron sputtering technique described Si substrate lower surface sputtering Al material formed back electrode；
S107, use the second mask plate, utilize magnetron sputtering technique to form source at described electron transfer layer surface sputtering Au material
Drain electrode, ultimately forms described based on CH3NH3PbI3The nmos device of material.
2. one kind based on CH3NH3PbI3The nmos device of material, it is characterised in that including: Si substrate, gate dielectric layer, electronics pass
Defeated layer, light absorbing zone, back electrode and source-drain electrode；Wherein, described electron transfer layer is by TiO2Material formed, and described based on
CH3NH3PbI3The nmos device of material is formed by the method preparation described in claim 1.
3. one kind based on CH3NH3PbI3The preparation method of the nmos device of material, it is characterised in that including:
Choose Si substrate；
Gate dielectric layer is grown at described Si substrate surface；
At described gate dielectric layer superficial growth electron transfer layer；
At described electron transfer layer superficial growth CH3NH3PbI3Material forms light absorbing zone；
Form source-drain electrode at described electric transmission superficial growth Au material, ultimately form described based on CH3NH3PbI3Material
Nmos device.
Method the most according to claim 3, it is characterised in that at described gate dielectric layer superficial growth electron transfer layer, bag
Include:
Utilize magnetron sputtering technique at described gate dielectric layer superficial growth TiO2Material forms electron transfer layer.
Method the most according to claim 4, it is characterised in that utilize magnetron sputtering technique raw on described gate dielectric layer surface
Long TiO2Material forms electron transfer layer, including:
The TiO using target to be purity Coriolis mass percentage ratio 99.99%2Target, target diameter is 60mm, and thickness is 5mm, evacuation, background
Vacuum is 4.0 × 10-3Pa, is passed through argon and oxygen successively, is 9:1 by the volume ratio of regulation flow-control argon and oxygen,
Total pressure remains 2.0Pa, and sputtering power is 80W, and growth forms described TiO2Material；
Through the annealing of 70 DEG C to 150 DEG C, form described electron transfer layer.
Method the most according to claim 3, it is characterised in that at described electron transfer layer superficial growth CH3NH3PbI3Material
Material forms light absorbing zone, including:
Use mask plate, utilize single spin coating proceeding at described electron transfer layer surface spin coating CH3NH3PbI3Material forms light and inhales
Receive layer.
Method the most according to claim 6, it is characterised in that use the first mask plate, utilizes single spin coating proceeding in institute
State electron transfer layer surface spin coating CH3NH3PbI3Material forms light absorbing zone, including:
By the PbI of 654mg2CH with 217mg3NH3I successively adds in DMSO:GBL, obtains PbI2And CH3NH3The mixing of I is molten
Liquid；
By PbI2And CH3NH3The mixed solution of I stirs two hours at 80 degrees celsius, by quiet at 80 degrees Celsius for the solution after stirring
Put 1 hour, obtain CH3NH3PbI3Solution；
By CH3NH3PbI3Solution drips described electron transfer layer, uses described first mask plate area of isolation, uses sol evenning machine spin coating
Uniformly, anneal 20 minutes under 100 degrees Celsius, form described light absorbing zone.
Method the most according to claim 3, it is characterised in that at described electron transfer layer superficial growth CH3NH3PbI3Material
After material forms light absorbing zone, also include:
Magnetron sputtering technique is utilized to form back electrode at described Si substrate lower surface sputtering Al material.
Method the most according to claim 3, it is characterised in that form source at described electron transfer layer superficial growth Au material
Drain electrode, including:
Use the second mask plate to isolate described light absorbing zone on described electron transfer layer surface；
Sputtering target material selects quality than purity > Au of 99.99%, using Ar material that mass percent purity is 99.999% as
Sputter gas is passed through sputtering chamber, is 4.0 × 10 in vacuum-4Pa, argon flow amount are 20cm3/ second, target cardinal distance are 10cm and work
Under conditions of electric current is 1A, preparation forms described source-drain electrode.
10. one kind based on CH3NH3PbI3The nmos device of material, it is characterised in that including: Si substrate, gate dielectric layer, electronics pass
Defeated layer, light absorbing zone and source-drain electrode；Wherein, described based on CH3NH3PbI3The nmos device of material is by claim 3～9
One described method preparation is formed.
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| CN109037387A (en) * | 2018-06-11 | 2018-12-18 | 烟台工程职业技术学院 | One kind being based on CH3NH3PbI3And MoSe2The preparation method of the MOSFET structure light-sensitive device of material |
| CN110571350A (en) * | 2019-08-14 | 2019-12-13 | 武汉华星光电半导体显示技术有限公司 | Display panel mother board, preparation method thereof and display panel |
| CN110911565A (en) * | 2019-12-04 | 2020-03-24 | 西北工业大学 | Novel transistor device based on N-type SiC and preparation method thereof |
| CN111029461A (en) * | 2019-12-04 | 2020-04-17 | 西北工业大学 | Novel transistor device based on P-type SiC and preparation method thereof |
| CN111029460A (en) * | 2019-12-04 | 2020-04-17 | 西北工业大学 | Novel transistor device based on complementary SiC and preparation method thereof |
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| CN111029461A (en) * | 2019-12-04 | 2020-04-17 | 西北工业大学 | Novel transistor device based on P-type SiC and preparation method thereof |
| CN111029460A (en) * | 2019-12-04 | 2020-04-17 | 西北工业大学 | Novel transistor device based on complementary SiC and preparation method thereof |
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