CN106299036B - A kind of SnZnO cushions for solar cell - Google Patents
A kind of SnZnO cushions for solar cell Download PDFInfo
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- CN106299036B CN106299036B CN201611037806.3A CN201611037806A CN106299036B CN 106299036 B CN106299036 B CN 106299036B CN 201611037806 A CN201611037806 A CN 201611037806A CN 106299036 B CN106299036 B CN 106299036B
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 63
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000003756 stirring Methods 0.000 claims abstract description 30
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000004246 zinc acetate Substances 0.000 claims abstract description 28
- 238000004821 distillation Methods 0.000 claims abstract description 26
- 238000005245 sintering Methods 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 238000001816 cooling Methods 0.000 claims abstract description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims abstract description 15
- 239000002270 dispersing agent Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 claims abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000032683 aging Effects 0.000 claims abstract description 11
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229940043237 diethanolamine Drugs 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims abstract description 6
- -1 after stirring Chemical compound 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 3
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 claims description 3
- HGQSXVKHVMGQRG-UHFFFAOYSA-N dioctyltin Chemical compound CCCCCCCC[Sn]CCCCCCCC HGQSXVKHVMGQRG-UHFFFAOYSA-N 0.000 claims description 3
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- CRHIAMBJMSSNNM-UHFFFAOYSA-N tetraphenylstannane Chemical compound C1=CC=CC=C1[Sn](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 CRHIAMBJMSSNNM-UHFFFAOYSA-N 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 8
- 230000003111 delayed effect Effects 0.000 description 4
- 238000005273 aeration Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 231100000481 chemical toxicant Toxicity 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of SnZnO cushions for solar cell, its preparation process are as follows：Step 1, zinc acetate is added into absolute ethyl alcohol, after stirring, acetic acid is added dropwise, stirs to form zinc acetate solution；Step 2, diethanol amine is added into zinc acetate solution, while adds organic tin salt, stirring forms zinc-tin mixed liquor；Step 3, zinc-tin mixed liquor is put into reactor, adds EDTA, the 5h of aerated reaction 3 is carried out after stirring；Step 4, the mixed liquor after aerated reaction is subjected to the 4h of distillation reaction 2, obtains mixed concentrated liquid；Step 5, mixed concentrated liquid is added into dispersant and carries out low temperature stirring, still aging 3 8h；Step 6, mixed concentrated liquid is subjected to the 4h of high temperature sintering 2 coated on base material；Step 7, sintering rear substrate is put into ethylenediamine atmosphere and carries out high-temperature high-voltage reaction, cushion is can obtain after cooling.The present invention effectively improves cushion compactness, the defects of having repaired buffer layer thin film problem, effectively reduce Carrier recombination, so as to significantly improve battery short circuit current density and fill factor, curve factor, realize cell power conversion efficiency.
Description
Technical field
The invention belongs to technical field of solar, and in particular to a kind of SnZnO cushions for solar cell.
Background technology
CIGS (CIGS) thin-film solar cells has the characteristics of cost is low, transformation efficiency is high, stability is good, is mesh
One of focus of preceding area of solar cell research.2013, Swiss Confederation's material science was announced with technology experiment room (EmPa),
Its flexible substrate CIGS solar-energy photo-voltaic cell researched and developed refreshes world record by 20.4% high conversion efficiency.CIGS is thin
The traditional structure of film solar cell is Basis/Mo/CIGS/CdS/ZnO/AZO, and wherein CdS is cushion, using CdS conducts
The shortcomings that following be present in cushion：First, CdS is toxic chemical substance；Secondly, being of common method of CdS cushions is prepared
Learn immersion method（CBD）, and other each layers of thin-film solar cells generally use dry process in a vacuum.Therefore, according to dry
The production line of method and wet mixing process, then improve the complexity of technique.Further, since the energy gap of CdS film is 2.3
Between ~ 2.4eV, therefore only have the spectral region below blue light wavelength to be absorbed by battery in solar spectrum, limit thin
The further lifting of film solar cell efficiency.
Exactly in this case, people have been working hard searching and can substitute CdS as cushion over nearly ten or twenty year
Material, have been achieved for some achievements at present.It is main to include using ZnS, ZnSe, ZnO, In2Se3、InZnSexDeng thin-film material
Substitution CdS does cushion.Wherein ZnO is a kind of multi-functional n-type group Ⅱ-Ⅵ compound semiconductor material, its visible-range
Interior average transmittance is up to more than 85%, and exciton bind energy reaches 60meV, therefore ZnO has turned into substitution CdS as cushion
One of ideal material.Delahoy and Platzer-bjorkman et al. proposed thin directly with ZnO respectively at 2000 and 2003
Film substitutes CdS film as cushioning layer material, and experimental result illustrates that substituting CdS by the use of ZnO can obtain as cushioning layer material
More satisfactory photoelectric properties, and the short circuit current of ZnO/CIGS hetero-junctions is also better than CdS/CIGS hetero-junctions.
The existing method for preparing ZnO buffer has sol-gel process, microwave-hydrothermal method, but the film prepared be present
Crystallinity is poor, there is a cavity, the technical matters such as the thickness of film is whard to control.
The content of the invention
It is an object of the invention to provide a kind of SnZnO cushions for solar cell, the present invention effectively improves buffering
Layer compactness, the defects of having repaired buffer layer thin film problem, Carrier recombination is effectively reduced, so as to significantly improve battery short circuit electricity
Current density and fill factor, curve factor, realize cell power conversion efficiency.
A kind of SnZnO cushions for solar cell, its preparation process are as follows：
Step 1, zinc acetate is added into absolute ethyl alcohol, after stirring, acetic acid is added dropwise, stirs to form zinc acetate
Solution；
Step 2, diethanol amine is added into zinc acetate solution, while adds organic tin salt, stirring forms zinc-tin mixed liquor；
Step 3, zinc-tin mixed liquor is put into reactor, adds EDTA, aerated reaction 3-5h is carried out after stirring；
Step 4, the mixed liquor after aerated reaction is subjected to distillation reaction 2-4h, obtains mixed concentrated liquid；
Step 5, mixed concentrated liquid is added into dispersant and carries out low temperature stirring, still aging 3-8h；
Step 6, mixed concentrated liquid is subjected to high temperature sintering 2-4h coated on base material；
Step 7, sintering rear substrate is put into ethylenediamine atmosphere and carries out high-temperature high-voltage reaction, can be delayed after cooling
Rush layer.
The formula of the cushion is as follows：
Zinc acetate 15-20 parts, absolute ethyl alcohol 30-50 parts, acetic acid 0.3-0.7 parts, diethanol amine 2-4 parts, organic tin salt 15-
20 parts, EDTA20-40 parts, dispersant 3-7 parts.
The organic tin salt uses one kind in stannous methide, dioctyl tin or tetraphenyltin.
The dispersant uses one in polyvinylpyrrolidone, benzyltriethylammoinium chloride or benzyltrimethylammonium chloride
Kind.
Mixing speed in the step 1 and step 2 is 500-1200r/min.
Aerated reaction gas in the step 3 is ammonia, and the flow velocity of the aerating gas is 30-50mL/min, described
Aerated reaction temperature is 60-80 DEG C.
Distillation reaction in the step 4 uses water-bath distillation method, and the temperature of the distillation reaction is 80-95 DEG C, described
Volume is the 40-70% of mixed liquor after distillation.
Whipping temp in the step 5 is 20-30 DEG C, and the mixing speed is 1000-1500r/min, the ageing
Temperature is 5-10 DEG C.
Coated area in the step 6 is 1-1.5mL/cm2, the sintering temperature is 200-350 DEG C, and the sintering is anti-
The pressure answered is 0.2-0.8MPa.
The amount of ethylenediamine in the step 7 is 7-10 times of zinc acetate, and the temperature of the high-temperature high-voltage reaction is 150-
180 DEG C, pressure 1.1-2.3MPa, the time of the high-temperature high-voltage reaction is 2-4h, and the temperature of the cooling reaction is nature
Cooling.
Compared with prior art, the invention has the advantages that：
1st, the present invention effectively improves cushion compactness, the defects of having repaired buffer layer thin film problem, effectively reduce current-carrying
Son is compound, so as to significantly improve battery short circuit current density and fill factor, curve factor, realizes cell power conversion efficiency.
2nd, present invention improves buffer-layer surface flatness, reduce buffer-layer surface floccule, reduce volume carrier and exist
Cushion/window bed boundary it is compound, improve the short-circuit current density 1.0-2.0mA/cm of thin-film solar cells2, improve electricity
Pond conversion efficiency absolute value 1-3%.
3rd, the aerating gas and distillating liquid that the present invention uses may be reused, and process costs are low, and meeting environmental protection will
Ask, at the same equipment is simple and reliable, safe operation, suitable for industrialized production.
Embodiment
The present invention is described further with reference to embodiment：
Embodiment 1
A kind of SnZnO cushions for solar cell, its preparation process are as follows：
Step 1, zinc acetate is added into absolute ethyl alcohol, after stirring, acetic acid is added dropwise, stirs to form zinc acetate
Solution；
Step 2, diethanol amine is added into zinc acetate solution, while adds organic tin salt, stirring forms zinc-tin mixed liquor；
Step 3, zinc-tin mixed liquor is put into reactor, adds EDTA, aerated reaction 3-5h is carried out after stirring；
Step 4, the mixed liquor after aerated reaction is subjected to distillation reaction 2h, obtains mixed concentrated liquid；
Step 5, mixed concentrated liquid is added into dispersant and carries out low temperature stirring, still aging 3h；
Step 6, mixed concentrated liquid is subjected to high temperature sintering 2h coated on base material；
Step 7, sintering rear substrate is put into ethylenediamine atmosphere and carries out high-temperature high-voltage reaction, can be delayed after cooling
Rush layer.
The formula of the cushion is as follows：
15 parts of zinc acetate, 30 parts of absolute ethyl alcohol, 0.3 part of acetic acid, 2 parts of diethanol amine, 15 parts of organic tin salt, EDTA20 parts,
3 parts of dispersant.
The organic tin salt uses stannous methide.
The dispersant uses polyvinylpyrrolidone.
Mixing speed in the step 1 and step 2 is 500r/min.
Aerated reaction gas in the step 3 is ammonia, and the flow velocity of the aerating gas is 30mL/min, the aeration
Reaction temperature is 60 DEG C.
Distillation reaction in the step 4 uses water-bath distillation method, and the temperature of the distillation reaction is 80 DEG C, the distillation
Volume is the 40% of mixed liquor afterwards.
Whipping temp in the step 5 is 20 DEG C, and the mixing speed is 1000r/min, and the Aging Temperature is 5
℃。
Coated area in the step 6 is 1mL/cm2, the sintering temperature is 200 DEG C, the pressure of the sintering reaction
For 0.2MPa.
The amount of ethylenediamine in the step 7 is 7 times of zinc acetate, and the temperature of the high-temperature high-voltage reaction is 150 DEG C, pressure
Power is 1.1MPa, and the time of the high-temperature high-voltage reaction is 2h, and the temperature of the cooling reaction is natural cooling.
Embodiment 2
A kind of SnZnO cushions for solar cell, its preparation process are as follows：
Step 1, zinc acetate is added into absolute ethyl alcohol, after stirring, acetic acid is added dropwise, stirs to form zinc acetate
Solution；
Step 2, diethanol amine is added into zinc acetate solution, while adds organic tin salt, stirring forms zinc-tin mixed liquor；
Step 3, zinc-tin mixed liquor is put into reactor, adds EDTA, aerated reaction 5h is carried out after stirring；
Step 4, the mixed liquor after aerated reaction is subjected to distillation reaction 4h, obtains mixed concentrated liquid；
Step 5, mixed concentrated liquid is added into dispersant and carries out low temperature stirring, still aging 8h；
Step 6, mixed concentrated liquid is subjected to high temperature sintering 4h coated on base material；
Step 7, sintering rear substrate is put into ethylenediamine atmosphere and carries out high-temperature high-voltage reaction, can be delayed after cooling
Rush layer.
The formula of the cushion is as follows：
20 parts of zinc acetate, 50 parts of absolute ethyl alcohol, 0.7 part of acetic acid, 4 parts of diethanol amine, 20 parts of organic tin salt, EDTA40 parts,
7 parts of dispersant.
The organic tin salt uses dioctyl tin.
The dispersant uses benzyltriethylammoinium chloride.
Mixing speed in the step 1 and step 2 is 1200r/min.
Aerated reaction gas in the step 3 is ammonia, and the flow velocity of the aerating gas is 50mL/min, the aeration
Reaction temperature is 80 DEG C.
Distillation reaction in the step 4 uses water-bath distillation method, and the temperature of the distillation reaction is 95 DEG C, the distillation
Volume is the 70% of mixed liquor afterwards.
Whipping temp in the step 5 is 30 DEG C, and the mixing speed is 1500r/min, and the Aging Temperature is 10
℃。
Coated area in the step 6 is 1.5mL/cm2, the sintering temperature is 350 DEG C, the pressure of the sintering reaction
Power is 0.8MPa.
The amount of ethylenediamine in the step 7 is 10 times of zinc acetate, and the temperature of the high-temperature high-voltage reaction is 180 DEG C,
Pressure is 2.3MPa, and the time of the high-temperature high-voltage reaction is 4h, and the temperature of the cooling reaction is natural cooling.
Embodiment 3
A kind of SnZnO cushions for solar cell, its preparation process are as follows：
Step 1, zinc acetate is added into absolute ethyl alcohol, after stirring, acetic acid is added dropwise, stirs to form zinc acetate
Solution；
Step 2, diethanol amine is added into zinc acetate solution, while adds organic tin salt, stirring forms zinc-tin mixed liquor；
Step 3, zinc-tin mixed liquor is put into reactor, adds EDTA, aerated reaction 4h is carried out after stirring；
Step 4, the mixed liquor after aerated reaction is subjected to distillation reaction 3h, obtains mixed concentrated liquid；
Step 5, mixed concentrated liquid is added into dispersant and carries out low temperature stirring, still aging 5h；
Step 6, mixed concentrated liquid is subjected to high temperature sintering 3h coated on base material；
Step 7, sintering rear substrate is put into ethylenediamine atmosphere and carries out high-temperature high-voltage reaction, can be delayed after cooling
Rush layer.
The formula of the cushion is as follows：
18 parts of zinc acetate, 40 parts of absolute ethyl alcohol, 0.4 part of acetic acid, 3 parts of diethanol amine, 18 parts of organic tin salt, EDTA35 parts,
5 parts of dispersant.
The organic tin salt uses tetraphenyltin.
The dispersant uses benzyltrimethylammonium chloride.
Mixing speed in the step 1 and step 2 is 800r/min.
Aerated reaction gas in the step 3 is ammonia, and the flow velocity of the aerating gas is 40mL/min, the aeration
Reaction temperature is 70 DEG C.
Distillation reaction in the step 4 uses water-bath distillation method, and the temperature of the distillation reaction is 90 DEG C, the distillation
Volume is the 60% of mixed liquor afterwards.
Whipping temp in the step 5 is 25 DEG C, and the mixing speed is 1300r/min, and the Aging Temperature is 8
℃。
Coated area in the step 6 is 1.3mL/cm2, the sintering temperature is 250 DEG C, the pressure of the sintering reaction
Power is 0.5MPa.
The amount of ethylenediamine in the step 7 is 9 times of zinc acetate, and the temperature of the high-temperature high-voltage reaction is 170 DEG C, pressure
Power is 1.8MPa, and the time of the high-temperature high-voltage reaction is 3h, and the temperature of the cooling reaction is natural cooling.
Embodiment 1-3 performance detection effect is as follows：
| Project | Embodiment 1 | Embodiment 2 | Embodiment 3 |
| Film thickness | 120nm | 123nm | 106nm |
| Visible light transmissivity | 86.9% | 88.7% | 90.2% |
| Energy gap | 3.24eV | 3.31eV | 3.09eV |
One embodiment of the invention is the foregoing is only, is not intended to limit the present invention, it is all to use equivalent substitution or equivalent transformation
The technical scheme that is obtained of mode, all fall within protection scope of the present invention.
Claims (10)
1. a kind of SnZnO cushions for solar cell, it is characterised in that its preparation process is as follows：
Step 1, zinc acetate is added into absolute ethyl alcohol, after stirring, acetic acid is added dropwise, stirring, it is molten to form zinc acetate
Liquid；
Step 2, diethanol amine is added into zinc acetate solution, while adds organic tin salt, stirring forms zinc-tin mixed liquor；
Step 3, zinc-tin mixed liquor is put into reactor, adds EDTA, aerated reaction 3-5h is carried out after stirring；
Step 4, the mixed liquor after aerated reaction is subjected to distillation reaction 2-4h, obtains mixed concentrated liquid；
Step 5, mixed concentrated liquid is added into dispersant and carries out low temperature stirring, still aging 3-8h, the low temperature whipping temp is
20-30℃；
Step 6, mixed concentrated liquid is subjected to high temperature sintering 2-4h, the high temperature sintering temperature is 200-350 coated on base material
℃；
Step 7, sintering rear substrate is put into ethylenediamine atmosphere and carries out high-temperature high-voltage reaction, can be buffered after cooling
Layer, the temperature of the high-temperature high-voltage reaction is 150-180 DEG C, pressure 1.1-2.3MPa.
A kind of 2. SnZnO cushions for solar cell according to claim 1, it is characterised in that the buffering
The formula of layer is as follows：
Zinc acetate 15-20 parts, absolute ethyl alcohol 30-50 parts, acetic acid 0.3-0.7 parts, diethanol amine 2-4 parts, organic tin salt 15-20
Part, EDTA20-40 parts, dispersant 3-7 parts.
3. a kind of SnZnO cushions for solar cell according to claim 2, it is characterised in that described organic
Pink salt uses one kind in stannous methide, dioctyl tin or tetraphenyltin.
4. a kind of SnZnO cushions for solar cell according to claim 2, it is characterised in that described scattered
Agent uses one kind in polyvinylpyrrolidone, benzyltriethylammoinium chloride or benzyltrimethylammonium chloride.
A kind of 5. SnZnO cushions for solar cell according to claim 1, it is characterised in that the step 1
It is 500-1200r/min with the mixing speed in step 2.
A kind of 6. SnZnO cushions for solar cell according to claim 1, it is characterised in that the step 3
In aerated reaction gas be ammonia, the flow velocity of the aerating gas is 30-50mL/min, and the aerated reaction temperature is 60-
80℃。
A kind of 7. SnZnO cushions for solar cell according to claim 1, it is characterised in that the step 4
In distillation reaction use water-bath distillation method, the temperature of the distillation reaction is 80-95 DEG C, and volume is mixed liquor after the distillation
40-70%.
A kind of 8. SnZnO cushions for solar cell according to claim 1, it is characterised in that the step 5
In the mixing speed be 1000-1500r/min, the Aging Temperature is 5-10 DEG C.
A kind of 9. SnZnO cushions for solar cell according to claim 1, it is characterised in that the step 6
In coated area be 1-1.5mL/cm2, the pressure of the sintering reaction is 0.2-0.8MPa.
A kind of 10. SnZnO cushions for solar cell according to claim 1, it is characterised in that the step
The amount of ethylenediamine in 7 is 7-10 times of zinc acetate, and the time of the high-temperature high-voltage reaction is 2-4h, the temperature of the cooling reaction
Spend for natural cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611037806.3A CN106299036B (en) | 2016-11-23 | 2016-11-23 | A kind of SnZnO cushions for solar cell |
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| DE10003491A1 (en) * | 2000-01-27 | 2001-08-02 | Midwest Res Inst Kansas City | Preparation of thin film semiconductor layer on photovoltaic device for solar cell comprises forming cadmium stannate layer on substrate, forming zinc stannate layer, semiconducting window layer and second semiconducting layer and heating |
| CN102770969A (en) * | 2009-12-21 | 2012-11-07 | 第一太阳能有限公司 | Photovoltaic device with buffer layer |
| CN103250257A (en) * | 2010-09-22 | 2013-08-14 | 第一太阳能有限公司 | Cdzno or snzno buffer layer for solar cell |
| WO2014142400A1 (en) * | 2013-03-12 | 2014-09-18 | 한국에너지기술연구원 | Solar cell having rear buffer layer and production method therefor |
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| US6137048A (en) * | 1996-11-07 | 2000-10-24 | Midwest Research Institute | Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby |
| US20090194165A1 (en) * | 2008-01-31 | 2009-08-06 | Primestar Solar, Inc. | Ultra-high current density cadmium telluride photovoltaic modules |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10003491A1 (en) * | 2000-01-27 | 2001-08-02 | Midwest Res Inst Kansas City | Preparation of thin film semiconductor layer on photovoltaic device for solar cell comprises forming cadmium stannate layer on substrate, forming zinc stannate layer, semiconducting window layer and second semiconducting layer and heating |
| CN102770969A (en) * | 2009-12-21 | 2012-11-07 | 第一太阳能有限公司 | Photovoltaic device with buffer layer |
| CN103250257A (en) * | 2010-09-22 | 2013-08-14 | 第一太阳能有限公司 | Cdzno or snzno buffer layer for solar cell |
| WO2014142400A1 (en) * | 2013-03-12 | 2014-09-18 | 한국에너지기술연구원 | Solar cell having rear buffer layer and production method therefor |
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