CN106298994B - A kind of preparation and use of Cu2Se photoelectric materials - Google Patents
A kind of preparation and use of Cu2Se photoelectric materials Download PDFInfo
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- CN106298994B CN106298994B CN201610663955.4A CN201610663955A CN106298994B CN 106298994 B CN106298994 B CN 106298994B CN 201610663955 A CN201610663955 A CN 201610663955A CN 106298994 B CN106298994 B CN 106298994B
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- 239000000463 material Substances 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000011669 selenium Substances 0.000 claims abstract description 69
- 239000010949 copper Substances 0.000 claims abstract description 57
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 229910003424 Na2SeO3 Inorganic materials 0.000 claims abstract description 15
- 239000011781 sodium selenite Substances 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000011259 mixed solution Substances 0.000 claims abstract description 13
- 238000001556 precipitation Methods 0.000 claims abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 36
- 239000000243 solution Substances 0.000 claims description 34
- 229910000366 copper(II) sulfate Inorganic materials 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 11
- 239000011734 sodium Substances 0.000 claims description 11
- 229910018143 SeO3 Inorganic materials 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 238000005119 centrifugation Methods 0.000 claims description 4
- 229910052927 chalcanthite Inorganic materials 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000005286 illumination Methods 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a kind of Cu2The preparation and use of Se photoelectric materials.Described Cu2The preparation method of Se photoelectric materials, it is characterised in that including：Mixed solution containing copper source and selenium source is reacted at 170 DEG C 180 DEG C a period of time, cooling, separating obtained precipitation, washed, dried, obtain Cu2Se photoelectric materials；Wherein, described selenium source is Na2SeO3.The Cu that the present invention synthesizes2Se photoelectric materials have more sensitive reaction to illumination, can serve as photoelectric conversion material.
Description
Technical field
The invention belongs to materials science field, is related to a kind of preparation of efficient photoelectric material and application thereof.
Background technology
Photovoltaic effect, as its name suggests, luminous energy can exactly be changed into the phenomenon of electric energy.Photovoltaic material is exactly to utilize light
Volt effect converts light energy into a kind of material of electric energy automatically.There is number of types of material that all there are photovoltaic effect, including silicon systems
Photovoltaic material, such as monocrystalline silicon, polysilicon, non-crystalline silicon；Compound semiconductor materials, such as GaAs.They change luminous energy
It is basically identical for the principle of electric energy, it is all based on the photovoltaic effect of p-n junction：P-type semiconductor and n-type semiconductor are passed through certain
Mode is grouped together, and material is thus formed a p-n junction.Majority carrier in p-n junction will spread so that one
Space-charge region produces in p-n junction, and forms the built-in electricity of a continuous enhancing that p-type semiconductor is pointed to by n-type semiconductor
, cause majority carrier reverse excursion, after reaching balance, electric current caused by drift is equal with electric current caused by diffusion.At this moment,
If a branch of luminous energy is more than the light irradiation of p-n junction energy gap on p-n junction, then a pair of electricity are will appear from this p-n junction
A sub hole pair.Because the presence of built in field, caused nonequilibrium electron carrier will be elegant to space-charge region both ends, former
The poised state come is broken, thus electromotive force also just produces.At this moment, if installing electrode in battery both sides and being connected to load
Thereon, caused photogenerated current will pass through load, you can to obtain the electric current of convenient use.
Cu2Se is a kind of p-type semiconductor, because it has the properties such as good photoelectricity, electric light conversion, is widely used in too
Positive energy battery, optical filtering elements, fast-ionic conductor etc..Cu2Its indirect band gap of Se can reach 2.1eV, very
Close to the spectral region of solar cell application.Different research groups is synthesized using different control devices and synthetic method
The Cu of the nano-scale of different morphologies is gone out2Se crystal, such as the hot method of hydrothermal/solvent, electrochemical erosion method, high temperature solid state reaction
Method, chemical baths and microwave chemical method etc..
The content of the invention
It is an object of the invention to provide a kind of Cu2The preparation method and purposes of Se photoelectric materials, the material have to illumination compared with
Sensitive reaction, can serve as photoelectric conversion material.
In order to achieve the above object, the invention provides a kind of Cu2The preparation method of Se photoelectric materials, it is characterised in that
Including：Mixed solution containing copper source and selenium source is reacted at 170 DEG C -180 DEG C a period of time, cooling, separating obtained precipitation,
Washing, dry, obtain Cu2Se photoelectric materials；Wherein, described selenium source is Na2SeO3。
Preferably, the preparation method of the mixed solution containing copper source and selenium source includes：By 0.25-0.3mol/L
CuSO4Solution mixes with 0.25-0.3mol/L sodium borohydrides according to volume ratio for 1: 1-1.1, stirs, it is molten that NaOH is added dropwise
PH value is adjusted to 12-13 by liquid, adds 0.13-0.15mol/L Na2SeO3Solution, described CuSO4Contain in solution
CuSO4And Na2SeO3The Na contained in solution2SeO3Mol ratio be 1: 0.5-0.6, stirring, obtain containing copper source and selenium source
Mixed solution.
It is highly preferred that described CuSO4The preparation method of solution includes：By CuSO4·5H2O is dissolved in deionized water, is obtained
To CuSO4Solution.
It is highly preferred that described Na2SeO3The preparation method of solution includes：Se powder is added to 0.3-0.35mol/L NaOH
In solution, the weight ratio of Se powder and NaOH solution is 1: 80-85, reacts 1.5-2h at normal temperatures, and centrifugation removes unreacted Se
Powder, obtain Na2SeO3Solution.
Preferably, described reaction temperature is 180 DEG C.
Preferably, the described reaction time is 12-13h.
Preferably, described reaction is carried out in electrically heated drying cabinet, and the mixed solution containing copper source and selenium source is put
In autoclave.
Preferably, described Cu2Se photoelectric materials have the laminated structure stacked.
Present invention also offers the Cu prepared by above-mentioned preparation method2Photoelectricity of the Se photoelectric materials as solar panel
The purposes of transition material.
The present invention uses Cu2+-NaBH4Complex and Na2SeO3As precursors, piece has been synthesized by hydro-thermal method
The Cu of shape stacked structure2Se nanometer sheets, and have studied the optimal conditions of building-up process.
Illustrated first in the present invention, when reaction temperature is less than 170 DEG C, the structure of product is scattered hexagonal structure, when
When reaction temperature is higher than 170 DEG C, the structure of product is the laminated structure stacked.
Na is selected in the present invention2SeO3It is that synthesis tabular stacks Cu as selenium source2The key of Se processes.
Compared with prior art, the beneficial effects of the invention are as follows：
The Cu that the present invention synthesizes2Se photoelectric materials have more sensitive reaction to illumination, can serve as photoelectric conversion material.
Brief description of the drawings
Fig. 1 is Cu2The result of study ((α hv) of the Ultraviolet transmission spectrum of Se photoelectric materials2Hv is schemed).
Fig. 2 is Cu2Se photoelectric material X-ray powder diffraction patterns.
Fig. 3 a are the Cu that embodiment 1 obtains2Se SEM pictures one.
Fig. 3 b are the Cu that embodiment 1 obtains2Se SEM pictures two.
Fig. 4 is the Cu obtained in comparative example 12Se SEM pictures.
Fig. 5 is the Cu obtained in comparative example 22Se SEM pictures.
Fig. 6 a：Crystal is under illumination and dark：OCP vs time diagrams.
Fig. 6 b：Ampere currents vs time diagrams.
Fig. 7 is the Cu obtained in comparative example 32Se SEM pictures.
Embodiment
With reference to specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate the present invention
Rather than limitation the scope of the present invention.In addition, it is to be understood that after the content of the invention lectured has been read, people in the art
Member can make various changes or modifications to the present invention, and these equivalent form of values equally fall within the application appended claims and limited
Scope.
Embodiment 1
A kind of Cu2The preparation method of Se photoelectric materials, is concretely comprised the following steps：
(1) CuSO is prepared4Solution：First by CuSO4·5H2O is dissolved in the CuSO that 0.3mol/L is made in deionized water4It is molten
Liquid.
(2) Na is prepared2SeO3The aqueous solution：Se powder is added in 0.3mol/L NaOH solutions, the weight of Se powder and NaOH solution
Amount reacts 1.5h, centrifugation removes unreacted Se powder, obtains 0.15mol/L Na than being 1: 83 under normal temperature2SeO3Solution.
(3) by 0.3mol/L CuSO4Solution 15mL mixes with 0.3mol/L sodium borohydrides 15mL, stirs 1h, adds dropwise
Enter 0.5mol/L NaOH solutions and pH value is adjusted to 12, add 0.15mol/L Na2SeO3Solution 15mL, 30min is stirred, is obtained
Mixed solution containing copper source and selenium source.
(4) mixed solution containing copper source and selenium source is poured into autoclave, be placed in electrically heated drying cabinet, is heated to
12h is reacted at 180 DEG C, naturally cools to room temperature, gained is separated by filtration and precipitates, obtained precipitation is washed with deionized 5 times,
60 DEG C of dry 3h, obtain with the laminated structure Cu stacked2Se photoelectric materials, as best shown in figures 3 a and 3b.
Fig. 1 is Cu2The result of study ((α hv) of the Ultraviolet transmission spectrum of Se photoelectric materials2Hv is schemed), illustrate Cu2Se has very
Good photocatalysis performance, can do photoelectric material well.
Fig. 2 is Cu2Se photoelectric material X-ray powder diffraction patterns, illustrate that in the crystal that experiment is drawn be largely Cu2Se
Crystal.
Tested by OCP-time (OCP-t) to Cu2The photoelectric property under illumination and dark of Se films is carried out
Result of study such as Fig. 6 a and Fig. 6 b.
Embodiment 2
A kind of Cu2The preparation method of Se photoelectric materials, is concretely comprised the following steps：
(1) CuSO is prepared4Solution：First by CuSO4·5H2O is dissolved in the CuSO that 0.3mol/L is made in deionized water4It is molten
Liquid.
(2) Na is prepared2SeO3The aqueous solution：Se powder is added in 0.3mol/L NaOH solutions, the weight of Se powder and NaOH solution
Amount reacts 1.5h, centrifugation removes unreacted Se powder, obtains 0.15mol/L Na than being 1: 83 under normal temperature2SeO3Solution.
(3) by 0.3mol/L CuSO4Solution 15mL mixes with 0.3mol/L sodium borohydrides 15mL, stirs 1h, adds dropwise
Enter 0.5mol/L NaOH solutions and pH value is adjusted to 12, add 0.15mol/L Na2SeO3Solution 15mL, 30min is stirred, is obtained
Mixed solution containing copper source and selenium source.
(4) mixed solution containing copper source and selenium source is poured into autoclave, be placed in electrically heated drying cabinet, is heated to
12h is reacted at 170 DEG C, naturally cools to room temperature, gained is separated by filtration and precipitates, obtained precipitation is washed with deionized 5 times,
60 DEG C of dry 3h, obtain with the laminated structure Cu stacked2Se photoelectric materials.
Comparative example 1
Similar to embodiment 1, difference is, the reaction temperature in described step (4) is 160 DEG C, and remaining condition is constant,
The Cu of gained2The SEM pictures of Se photoelectric materials are as shown in Figure 4.
Comparative example 2
Similar to embodiment 1, difference is, the reaction temperature in described step (4) is 165 DEG C, and remaining condition is constant,
The Cu of gained2The SEM pictures of Se photoelectric materials are as shown in Figure 5.
Comparative example 3
Similar to embodiment 1, difference is to select selenium source (Na2SeSO3), and other conditions are constant, the Cu of gained2Se photoelectricity
The SEM pictures of material are as shown in Figure 7, it was demonstrated that from Na2SeO3It is that synthesis tabular stacks Cu as selenium source2The key of Se processes.
Claims (6)
- A kind of 1. Cu2The preparation method of Se photoelectric materials, it is characterised in that including：Mixed solution containing copper source and selenium source is existed 12-13h is reacted at 170 DEG C -180 DEG C, is cooled down, separating obtained precipitation, is washed, dries, obtains Cu2Se photoelectric materials；Wherein, institute The selenium source stated is Na2SeO3；The preparation method of the described mixed solution containing copper source and selenium source includes：By 0.25-0.3mol/L CuSO4Solution is 1 according to volume ratio with 0.25-0.3mol/L sodium borohydrides：1-1.1 is mixed, and stirring, it is molten that NaOH is added dropwise PH value is adjusted to 12-13 by liquid, adds 0.13-0.15mol/L Na2SeO3Solution, described CuSO4Contain in solution CuSO4And Na2SeO3The Na contained in solution2SeO3Mol ratio be 1：0.5-0.6, stirring, obtain containing copper source and selenium source Mixed solution；Described Cu2Se photoelectric materials have the laminated structure stacked.
- 2. Cu as claimed in claim 12The preparation method of Se photoelectric materials, it is characterised in that described CuSO4The system of solution Preparation Method includes：By CuSO4·5H2O is dissolved in deionized water, obtains CuSO4Solution.
- 3. Cu as claimed in claim 12The preparation method of Se photoelectric materials, it is characterised in that described Na2SeO3Solution Preparation method includes：Se powder is added in 0.25-0.3mol/L NaOH solutions, the weight ratio of Se powder and NaOH solution is 1：80- 85,1.5-2h is reacted under normal temperature, centrifugation removes unreacted Se powder, obtains Na2SeO3Solution.
- 4. Cu as claimed in claim 12The preparation method of Se photoelectric materials, it is characterised in that described reaction temperature is 180 ℃。
- 5. Cu as claimed in claim 12The preparation method of Se photoelectric materials, it is characterised in that described reaction is in electrothermal drying Carried out in case, the mixed solution containing copper source and selenium source is placed in autoclave.
- 6. the Cu any one of claim 1-52Cu prepared by the preparation method of Se photoelectric materials2Se photoelectric materials are made For the purposes of the photoelectric conversion material of solar panel.
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| CN102897723A (en) * | 2012-08-29 | 2013-01-30 | 江苏大学 | Hydrothermal method for preparing selenium-copper-based nano-crystals |
| CN103879974A (en) * | 2014-04-17 | 2014-06-25 | 哈尔滨工业大学 | Method for preparing copper selenide nanowires by microwave-assisted method |
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| CN102897723A (en) * | 2012-08-29 | 2013-01-30 | 江苏大学 | Hydrothermal method for preparing selenium-copper-based nano-crystals |
| CN103879974A (en) * | 2014-04-17 | 2014-06-25 | 哈尔滨工业大学 | Method for preparing copper selenide nanowires by microwave-assisted method |
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Inventor after: Xue Shaolin Inventor after: Feng Hange Inventor after: Hou Xin Inventor after: Xie Pei Inventor after: Liu Zhiyuan Inventor after: Gao Zhiyong Inventor after: Wang Youya Inventor after: Li Lingwei Inventor before: Xue Shaolin Inventor before: Feng Hange Inventor before: Hou Xin Inventor before: Xie Pei Inventor before: Gao Zhiyong Inventor before: Wang Youya Inventor before: Li Lingwei |
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Granted publication date: 20180223 Termination date: 20200812 |