CN106293230A - A kind of touch screen copper wiring method and touch screen - Google Patents
A kind of touch screen copper wiring method and touch screen Download PDFInfo
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- CN106293230A CN106293230A CN201610653312.1A CN201610653312A CN106293230A CN 106293230 A CN106293230 A CN 106293230A CN 201610653312 A CN201610653312 A CN 201610653312A CN 106293230 A CN106293230 A CN 106293230A
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- metal film
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- General Engineering & Computer Science (AREA)
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- Chemical & Material Sciences (AREA)
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- Human Computer Interaction (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing Of Electric Cables (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
The invention provides a kind of touch screen copper wiring method, comprise the following steps: S1: substrate layer is provided, described substrate layer sequentially forms ito film layer and copper metal film layer, and described copper metal film layer includes that visible area and non-visible area, described ito film layer are positioned at described visible area；S2: described copper metal film layer is carried out photoetching, to obtain the ito film layer pattern preset；S3: form protecting film layer on the non-visible area surface of described copper metal film layer；S4: be etched the copper metal film layer in described visible area, to remove the copper metal film layer on described ito film layer；S5: remove the protecting film layer on the non-visible area surface of described copper metal film layer.The touch screen copper wiring method that the present invention provides, by copper metal film layer is used one-time formed mode with ITO, instead of employing Ag Yu ITO and carries out overlapping mode, solve the problem that the overlap joint precision of employing Ag Yu ITO is the highest.Separately, present invention also offers a kind of touch screen using above-mentioned copper wiring method to prepare.
Description
Technical field
The present invention relates to touch screen preparation technology field, particularly relate to a kind of touch screen copper wiring method and touch screen.
Background technology
At present, the touch screen of intelligent electronic device generally uses Ag (silver-colored) overlap joint ITO (tin indium oxide), and uses this doing
, the most generally there is many difficult points such as overlap joint the highest, the easy open circuit of precision in method, and when being applied to intelligence
During electronic equipment, the most easily produce the problems such as operating handle is the best, there is high latency, display image quality is the most pure and fresh, it is impossible to meet
User, for the display image quality requirement of touch screen, greatly reduces user's experience.
Summary of the invention
In view of the above-mentioned problems in the prior art, it is an object of the invention to, it is provided that a kind of touch screen copper wiring side
Method and touch screen, to solve the problem that existing touch screen operation feel is the best, display image quality is the most pure and fresh.
To achieve these goals, the following technical scheme of embodiment of the present invention offer:
First aspect, the invention provides a kind of touch screen copper wiring method, comprises the following steps:
S1: substrate layer is provided, sequentially forms ito film layer and copper metal film layer, and described metallic copper on described substrate layer
Film layer includes that visible area and non-visible area, described ito film layer are positioned at described visible area；
S2: described copper metal film layer is carried out photoetching, to obtain the ito film layer pattern preset；
S3: form protecting film layer on the non-visible area surface of described copper metal film layer；
S4: be etched the copper metal film layer in described visible area, to remove the copper metal film on described ito film layer
Layer；
S5: remove the protecting film layer on the non-visible area surface of described copper metal film layer.
As the improvement of technique scheme, in step sl, following steps are specifically included:
Described substrate layer is formed substrate；
Described ito film layer and copper metal film layer is sequentially formed over the substrate by vapour deposition.
As the improvement of technique scheme, in step s 2, following steps are specifically included:
Described copper metal film layer is pressed dry film；
Described copper metal film layer is exposed；
Described copper metal film layer after exposure is cut into slices；
Copper metal film layer after section is carried out dry film development；
Described copper metal film layer after development is etched；
The ito film layer being pointed to described copper metal film layer visible area is etched, to obtain described default ito film layer figure
Case.
Further, " the ito film layer being pointed to described copper metal film layer visible area is etched, described pre-to obtain
If ito film layer pattern " step after, further comprising the steps of:
Remove the dry film on described copper metal film layer.
Further, described method uses coiled strip film laminator that described copper metal film layer press dry film, described coiled strip pressure
Take turns temperature on film machine and lower whorl temperature be 110 DEG C～130 DEG C, described coiled strip film laminator press dry film speed for (0.8～
1.2)m/min。
Further, when described copper metal film layer is pressed dry film, its pressure pressing dry film be 0.45MPa～
0.5MPa, and it press dry discharge of film for (20～30) ml/min.
Further, described method uses exposure machine to be exposed described copper metal film layer, the fluorescent tube of described exposure machine
Power is (4～6) KW, and the exposure guide rule of described exposure machine is (6～16) rank, and the energy of described exposure machine is (60～90) mj/
cm2。
Further, the copper metal film layer after described method uses development etching line to cut into slices carries out dry film development and incites somebody to action
Described copper metal film layer after development is etched.
Further, temperature when using described development etching line to develop is (28～32) DEG C, uses described development
The concentration that etching line carries out developing is (8.5～10.5) g/L, spraying as (1.0～1.4) kg/cm during development2, the speed of development
Degree is (3.8～4.2) m/min.
Further, concentration when using described development etching line that described copper metal film layer is etched for (0.60～
1.10) mol/L, spraying as (1.0～1.4) kg/cm during etching2, the temperature of etching is (30～40) DEG C, and the speed of etching
For (2.0～4.2) m/min.
Further, concentration when using described development etching line that described ito film layer is etched for (5.50～
6.50) mol/L, spraying as (1.0～1.4) kg/cm during etching2, the temperature of etching is (35～45) DEG C, and the speed of etching
For (2.0～4.2) m/min.
Further, when step " removes the dry film on described copper metal film layer ", the concentration removing dry film is (8.0～10)
G/L, goes the spraying as (1.0～1.4) kg/cm of dry film2, go the temperature of dry film for (45～55) DEG C, and go the speed of dry film to be
(3.8～4.2) m/min.
Further, in step s3, following steps are specifically included:
Carry out printing acidproof on the non-visible area surface of described copper metal film layer；
The non-visible area surface of described copper metal film layer is dried, to form described guarantor on described non-visible area surface
Cuticular layer.
Further, the thickness that described printing is acidproof is (10～11) um.
As the improvement of technique scheme, described method uses development etching line to lose described copper metal film layer
Carving, when being etched the copper metal film layer in described visible area, the concentration of its etching is (0.60～1.10) mol/L, erosion
Spraying as (1.0～1.4) kg/cm during quarter2, the temperature of etching is (30～40) DEG C, and the speed of etching is (2.0～4.2)
m/min。
As the improvement of technique scheme, described method uses the mode of etching to described copper metal film layer non-visible area
The protective layer on surface is removed, and concentration during etching is (8.0～10) g/L, spraying as (1.0～1.4) kg/ during etching
cm2, the temperature of etching is (45～55) DEG C, and the speed of etching is (3.8～4.2) m/min.
Second aspect, present invention also offers a kind of touch screen, and described touch screen uses touch screen copper wiring described above
Method prepares.
The touch screen copper wiring method of present invention offer and touch screen, compared with prior art, have the advantage that
(1) instead of the lap joint process of Ag (silver-colored) and ITO (tin indium oxide).The touch screen copper wiring method of the present invention, logical
Cross and copper metal film layer is used one-time formed mode with ITO, instead of employing Ag Yu ITO and carry out overlapping mode, solve and adopt
By the highest problem of the overlap joint precision of Ag Yu ITO.
(2) low resistance, low latency phenomenon and display image quality are pure and fresh.The touch screen copper wiring method that the present invention provides, due to
Copper metal film layer uses one-shot forming with ITO, therefore, when being applied on touch screen, it is possible to solve overlap joint precision the highest
And the problem that resistance is higher and delay phenomenon is serious caused, and then making the touch-control feel of touch screen more preferably, display image quality is more
Pure and fresh.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to
Other accompanying drawing is obtained according to these accompanying drawings.
Fig. 1 is the flow chart of the touch screen copper wiring method that the embodiment of the present invention provides；
Fig. 2 is the flow chart of the S2 in the touch screen copper wiring method that the embodiment of the present invention provides.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
For ease of describe, can use such as here " ... under ", " ... below ", D score, " ... on ", " on "
Deng space relative terms, an element or feature and another (a bit) element or relation of feature as illustrated in the drawing are described.
Be appreciated that when an element or layer be referred to as another element or layer " on ", " being connected to " or " being couple to " another element or
During layer, it can directly on another element or layer, be directly connected to or be couple to another element or layer, or residence can be there is
Between element or layer.
It is appreciated that terminology used here merely to describe specific embodiment, is not intended to limit the present invention.Here
During use, the most clearly stating, otherwise singulative " " and " being somebody's turn to do " are also intended to include plural form.Further
Ground, when using in this manual, term " include " and/or " comprising " show described feature, entirety, step, element and/or
The existence of assembly, but be not excluded for other features one or more, entirety, step, element, assembly and/or the existence of a combination thereof or
Increase.Description subsequent descriptions is to implement the better embodiment of the present invention, and right described description is to illustrate that the present invention's is general
For the purpose of principle, it is not limited to the scope of the present invention.Protection scope of the present invention is when depending on the defined person of claims
It is as the criterion.
Seeing also Fig. 1 to Fig. 2, a kind of touch screen copper wiring method provided for the embodiment of the present invention, including following
Step:
S1: substrate layer is provided, sequentially forms ito film layer and copper metal film layer, and described metallic copper on described substrate layer
Film layer includes that visible area and non-visible area, described ito film layer are positioned at described visible area.
The purpose of this step is to form ito film layer and copper metal film layer on substrate layer, so that ito film layer and metal
Copper film layer one-shot forming, it is not necessary to overlap.In the present embodiment, the thickness of this substrate layer can be 50um, and this substrate layer can
Use PET (Polythylene terephthalate polyethylene terephthalate), with have good creep resistance and
Ruggedness.
Specifically, above-mentioned steps S1 specifically includes step:
S11: form substrate on described substrate layer.
In the present embodiment, the thickness of described substrate is less than or equal to the thickness of described substrate layer.On described substrate layer
Form described substrate, in order to be subsequently formed described ito film layer and copper metal film layer.
S12: sequentially form described ito film layer and copper metal film layer by vapour deposition over the substrate.
The purpose of this step is so that ito film layer and copper metal film layer one-shot forming, uses Ag with ITO to enter to substitute
The mode of row overlap joint, it is ensured that be subsequently applied on touch screen to have low resistance and the pure and fresh advantage of image quality.Preferably, described ITO
Film layer and copper metal film layer can be deposited by chemical gaseous phase or physical vapour deposition (PVD) formed with described substrate on.
S2: described copper metal film layer is carried out photoetching, to obtain the ito film layer pattern preset.
The purpose of this step is to obtain metallic copper figure layer and the pattern of ito film layer.This step specifically includes following step
Rapid:
S21: described copper metal film layer is pressed dry film.
The purpose of this step is to protect copper metal film layer, to prevent subsequent step from copper metal film layer is caused damage
Bad.Specifically, in this step, can use coiled strip film laminator that described copper metal film layer press dry film, and described coiled strip pressure
Take turns temperature on film machine and lower whorl temperature be 110 DEG C～130 DEG C, described coiled strip film laminator press dry film speed for (0.8～
1.2) m/min, in order to quickly form dry film protection on described copper metal film layer.Preferably, temperature and lower whorl are taken turns on described
Temperature may be selected to be 110 DEG C, 115 DEG C, 120 DEG C or 125 DEG C etc..The film speed that press dry of described coiled strip film laminator is chosen as 0.8m/
Min, 0.9m/min, 1.0m/min, 1.1m/min or 1.2m/min etc..It is understood that in other embodiments, described volume
Take turns temperature on material film laminator and lower whorl temperature also can be arranged to 110 DEG C～150 DEG C according to the actual requirements, described coiled strip film laminator
The film speed that press dry can be also (0.5～2.0) m/min, or according to actual press dry film need regulation arrange.
Further, when when described copper metal film layer is pressed dry film, the dry film in order to ensure formation can be firmly
Ground is positioned at the surface of described copper metal film layer, and pressure when pressing dry film is 0.45MPa～0.5MPa, and the discharge pressing dry film is
(20～30) ml/min.Preferably, when carrying out pressing dry film, its pressure may be selected to be 0.45MPa, 0.46MPa, 0.47MPa,
0.48MPa, 0.49MPa, 0.50MPa etc..Its discharge pressing dry film can be 20ml/min, 25ml/min or 30ml/min etc..
It is understood that in other embodiments, when described copper metal film layer is pressed dry film, its pressure also can be according to reality
Demand is arranged, and for example with (0.3～1.0) MPa, its discharge pressing dry film also may be selected to be (15～40) ml/min, according to
Actual process demand is arranged.
S22: described copper metal film layer is exposed.
In this step, use exposure machine that described copper metal film layer is exposed.Specifically, the described exposure machine of employing
Power of lamp tube be (4～6) KW, the exposure guide rule of described exposure machine is (6～16) rank, and the energy of described exposure machine be (60～
90)mj/cm2.Preferably, the power of lamp tube of described Exposing Lamp can be 4KW, 5KW or 6KW etc..The exposure guide rule of described exposure machine can
Use 6 rank, 8 rank, 10 rank, 12 rank, 14 rank or 16 rank.The energy of described exposure machine can be 60mj/cm2、65mj/cm2、70mj/
cm2、75mj/cm2、80mj/cm2、85mj/cm2, or 90mj/cm2Deng.It is understood that in other embodiments, described exposure
The power of lamp tube of light modulation also can adjust according to actual process and arrange, such as, the power of lamp tube of described Exposing Lamp also optional (2～
10) KW, described exposure guide rule also can be selected for (6～21).The energy of described exposure machine can set according to the exponent number that described exposure guide rule selects
Put.
S23: the described copper metal film layer after exposure is cut into slices.
The purpose of this step is the material in order to remove described copper metal film layer excess surface, in order to follow-up show
Shadow.
S24: the copper metal film layer after section is carried out dry film development.
In this step, can use development etching line that the copper metal film layer after section is carried out dry film development, in order to after
Continue and be etched according to this development.Specifically, when using described development etching line to develop, its temperature is (28～32)
DEG C, the concentration using described development etching line to carry out developing is (8.5～10.5) g/L, and the development of described development etching line sprays
For (1.0～1.4) kg/cm2, and the developing powder of described development etching line is (3.8～4.2) m/min.Preferably, carrying out
Temperature during development can be 28 DEG C, 29 DEG C, 30 DEG C, 31 DEG C or 32 DEG C etc..Development concentration be 8.5g/L, 9.0g/L, 9.5g/L,
10.0g/L or 10.5g/L.Development sprays preferably 1.0kg/cm2、1.1kg/cm2、1.2kg/cm2、1.3kg/cm2Or 1.4kg/
cm2Deng.The speed of development can use 3.8m/min, 3.9m/min, 4.0m/min, 4.1m/min or 4.2m/min etc..Certainly, may be used
To be understood by, in other embodiments, temperature, concentration and the development of its development sprays and all can set according to actual process demand
Putting, such as, the temperature of development can be (20～40) DEG C, and concentration can be (6.0～15.0) g/L, and development sprays and may be selected to be (0.8
～2.0) kg/cm2, the speed of its development can be (3.0～5.5) m/min.
S25: the described copper metal film layer after development is etched.
In this step, can use above-mentioned development etching line that described copper metal film layer is etched, in order to expose institute
State ito film layer, consequently facilitating follow-up, ito film layer is etched.Specifically, etching time, its etching concentration be (0.60～
1.10) mol/L, the etching of described development etching line sprays as (1.0～1.4) kg/cm2, the etching temperature of described development etching line
Degree is (30～40) DEG C, and the speed of etching is (2.0～4.2) m/min.Preferably, the concentration of etching can be 0.6mol/L,
0.7mol/L, 0.8mol/L, 0.9mol/L, 1.0mol/L or 1.1mol/L, etching sprays preferably 1.0kg/cm2、1.1kg/
cm2、1.2kg/cm2、1.3kg/cm2Or 1.4kg/cm2Deng.The temperature of etching is preferably 30 DEG C, 32 DEG C, 34 DEG C, 36 DEG C, 38 DEG C
Or 40 DEG C etc..The speed of etching can use 2.0m/min, 2.5m/min, 3.0m/min, 3.5m/min, 4.0m/min or 4.2m/
Min etc..It is, of course, understood that in other embodiments, temperature, concentration of its etching, etching sprays and speed all can root
Border process requirements is arranged factually, and such as, the temperature of etching can be (10～50) DEG C, and concentration can be (0.2～1.5) g/L, etching spray
Pressure may be selected to be (0.8～2.0) kg/cm2, the speed of its etching can be (0.5～5.5) m/min.
S26: the ito film layer being pointed to described copper metal film layer visible area is etched, to obtain described default ito film
Layer pattern.
The purpose of this step is to be etched described ito film layer, to obtain the ito film layer pattern preset.At this
In step, owing to described ito film layer is in below the visible area of described copper metal film layer, therefore, only need to be to described metallic copper
Part in film layer visible area is etched.Specifically, can use above-mentioned development etching line that described ito film layer is carried out
Etching, when using described development etching line to be etched described ito film layer, the concentration of its etching is (5.50～6.50)
Mol/L, the etching of described development etching line sprays as (1.0～1.4) kg/cm2, the etch temperature of described development etching line is
(35～45) DEG C, and etching speed be (2.0～4.2) m/min.Preferably, the concentration of etching can be 5.5mol/L,
5.7mol/L, 5.9mol/L, 6.1mol/L, 6.3mol/L or 6.5mol/L, etching sprays preferably 1.0kg/cm2、1.1kg/
cm2、1.2kg/cm2、1.3kg/cm2Or 1.4kg/cm2Deng.The temperature of etching is preferably 35 DEG C, 37 DEG C, 39 DEG C, 41 DEG C, 43 DEG C
Or 45 DEG C etc..The speed of etching can use 2.0m/min, 2.5m/min, 3.0m/min, 3.5m/min, 4.0m/min or 4.2m/
Min etc..It is, of course, understood that in other embodiments, temperature, concentration of its etching, etching sprays and speed all can root
Border process requirements is arranged factually, and such as, the temperature of etching can be (30～55) DEG C, and concentration can be (4～8) g/L, and etching sprays can
It is chosen as (0.8～2.0) kg/cm2, the speed of its etching can be (0.5～5.5) m/min.
Further, after described ito film layer is etched, further comprising the steps of:
S27: remove the dry film on described copper metal film layer.
The purpose of this step is to remove the dry film on copper metal film layer, to expose copper metal film layer.In this step, can adopt
The dry film of described metallic copper film surface is removed by the mode of etching.Specifically, when being etched removing dry film, it removes dry film
Concentration be (8.0～10) g/L, go the spraying as (1.0～1.4) kg/cm of dry film2, the temperature removing dry film is (45～55) DEG C,
And go the speed of dry film for (3.8～4.2) m/min.Preferably, go the concentration of dry film can be 8.0mol/L, 8.5mol/L,
9.0mol/L, 9.5mol/L or 10mol/L, that removes dry film sprays preferably 1.0kg/cm2、1.1kg/cm2、1.2kg/cm2、
1.3kg/cm2Or 1.4kg/cm2Deng.The temperature removing dry film is preferably 45 DEG C, 47 DEG C, 49 DEG C, 51 DEG C, 53 DEG C or 55 DEG C etc..Etching
Speed can use 3.8m/min, 3.9m/min, 4.0m/min, 4.1m/min or 4.2m/min etc..It will of course be understood that
It is in other embodiments, temperature, concentration when it uses engraving method to remove dry film, to spray and speed all can be according to actual work
Skill demand is arranged, and such as, the temperature removing dry film can be (30～70) DEG C, and concentration can be (6～12) g/L, goes the spraying of dry film can
It is chosen as (0.8～2.0) kg/cm2, the speed removing dry film can be (2.0～5.5) m/min.
S3: form protecting film layer on the non-visible area surface of described copper metal film layer.
This step is the non-visible area surface in order to protect copper metal film layer, to prevent subsequent technique to non-visible area surface
The damage caused.Specifically, when forming described protecting film layer, following steps are specifically included:
S31: carry out printing acidproof on the non-visible area surface of described copper metal film layer.
In this step, so that described non-visible area can be protected by the protecting film layer formed, described printing
Acidproof thickness is (10～11) um.Preferably, the thickness that described printing is acidproof may select 10um, 10.5um or 11um etc..Can
To be understood by, in other embodiments, the thickness that described printing is acidproof can be also 9um～13um.
S32: be dried the non-visible area surface of described copper metal film layer, to form institute on described non-visible area surface
State protecting film layer.
The purpose of this step is acidproof in order to be dried the printing on described non-visible area surface, to form described protecting film layer,
It is thus possible to the surface of described non-visible area is protected.Preferably, the drying machine surface to described non-visible area can be used
It is dried.
Acidproof in the way of forming described protecting film layer owing to using at described non-visible area surface printing, it is therefore not necessary to
Extra described non-visible area is pressed dry film, develop, the step such as exposure, decrease manufacturing procedure so that whole copper wiring
Method is the simplest, is simultaneously also beneficial to reduce process time and save processing cost.
S4: be etched the copper metal film layer in described visible area, to remove the copper metal film on described ito film layer
Layer.
The purpose of this step is to expose the described ito film layer below visible area.Specifically, in this step, can adopt
By the mode of development etching line, the copper metal film layer in described visible area is etched.Preferably, in order to ensure to described
When copper metal film layer in visible area is etched, the concentration of its etching is (0.60～1.10) mol/L, and etching sprays as (1.0
～1.4) kg/cm2, etch temperature is (30～40) DEG C, and the speed of etching is (2.0～4.2) m/min.Preferably, etching
Concentration can be 0.6mol/L, 0.7mol/L, 0.8mol/L, 0.9mol/L, 1.0mol/L or 1.1mol/L, and etching sprays preferably
1.0kg/cm2、1.1kg/cm2、1.2kg/cm2、1.3kg/cm2Or 1.4kg/cm2Deng.Etching temperature be preferably 30 DEG C, 32 DEG C,
34 DEG C, 36 DEG C, 38 DEG C or 40 DEG C etc..Etching speed can use 2.0m/min, 2.5m/min, 3.0m/min, 3.5m/min,
4.0m/min or 4.2m/min etc..It is, of course, understood that in other embodiments, the temperature of its etching, concentration, etching
Spraying and speed all can be arranged according to actual process demand, such as, the temperature of etching can be (10～50) DEG C, and concentration can be (0.2
～1.5) g/L, etching sprays and may be selected to be (0.8～2.0) kg/cm2, the speed of its etching can be (0.5～5.5) m/min.
S5: remove the protecting film layer on the non-visible area surface of described copper metal film layer.
The purpose of this step is the protecting film layer in order to remove described copper metal film layer non-visible area, completes obtaining preparation
Copper wiring product.In the present embodiment, described method uses the mode of etching to described copper metal film layer non-visible area surface
Protective layer be removed, concentration during etching is (8.0～10) g/L, spraying as (1.0～1.4) kg/cm during etching2, erosion
Carving temperature is (45～55) DEG C, and the speed of etching is (3.8～4.2) m/min.Preferably, the concentration of etching can be 8.0mol/
L, 8.5mol/L, 9.0mol/L, 9.5mol/L or 10mol/L, etching spray preferably 1.0kg/cm2、1.1kg/cm2、
1.2kg/cm2、1.3kg/cm2Or 1.4kg/cm2Deng.The temperature of etching is preferably 45 DEG C, 47 DEG C, 49 DEG C, 51 DEG C, 53 DEG C or 55
DEG C etc..The speed of etching can use 3.8m/min, 3.9m/min, 4.0m/min, 4.1m/min or 4.2m/min etc..Certainly, may be used
To be understood by, in other embodiments, it uses engraving method to remove the protection film temperature, dense on described non-visible area surface
Degree, spraying and speed all can be arranged according to actual process demand, such as, the temperature removing dry film can be (30～70) DEG C, and concentration can
For (6～12) g/L, spraying of dry film is gone to may be selected to be (0.8～2.0) kg/cm2, the speed removing dry film can be (2.0～5.5)
m/min。
Use said method, by sequentially forming copper metal film layer and ito film layer over the substrate, so that metal
Copper film layer the most i.e. links together with ito film layer, instead of existing employing overlapping mode and the overlap joint precision that causes not
High problem；Additionally, when the non-visible area of copper metal film layer carrying out protecting film layer and being formed, use printing acidproof and resistance to printing
The mode that acid is dried, it is not necessary to additionally carry out pressing dry film, expose, the technique such as development, decrease processing step, simplify technique
Flow process, simultaneously without equipment such as optional equipment developing machine, exposure machines, is conducive to controlling production cost.
Present invention also offers a kind of touch screen using above-mentioned touch screen copper wiring method to prepare, described touch screen
Owing to using above-mentioned copper wiring method to prepare, therefore, it has the advantages such as low resistance, low latency phenomenon and display image quality are pure and fresh,
Be conducive to improving user's experience.
The copper wiring method of the touch screen that the present invention provides and touch screen, use copper metal film layer once to become with ito film layer
Type, instead of the mode that existing employing Ag and ITO carries out overlapping, and solves overlap joint precision when overlap joint Ag Yu ITO overlaps
Bad problem；Meanwhile, use copper metal film layer and ito film layer one-shot forming, be therefore applied on touch screen after molding
Time, there is the advantage such as low resistance, low latency phenomenon, can allow signal addressing speed faster, scan line more dense, display image quality more
Pure and fresh, be conducive to improving the experience of user.
Embodiments described above, is not intended that the restriction to this technical scheme protection domain.Any in above-mentioned enforcement
Amendment, equivalent and the improvement etc. made within the spirit of mode and principle, should be included in the protection model of this technical scheme
Within enclosing.
Claims (17)
1. a touch screen copper wiring method, it is characterised in that comprise the following steps:
S1: substrate layer is provided, sequentially forms ito film layer and copper metal film layer, and described copper metal film layer on described substrate layer
Including visible area and non-visible area, described ito film layer is positioned at described visible area；
S2: described copper metal film layer is carried out photoetching, to obtain the ito film layer pattern preset；
S3: form protecting film layer on the non-visible area surface of described copper metal film layer；
S4: be etched the copper metal film layer in described visible area, to remove the copper metal film layer on described ito film layer；
S5: remove the protecting film layer on the non-visible area surface of described copper metal film layer.
2. the method for claim 1, it is characterised in that in step sl, specifically includes following steps:
Described substrate layer is formed substrate；
Described ito film layer and copper metal film layer is sequentially formed over the substrate by vapour deposition.
3. the method for claim 1, it is characterised in that in step s 2, specifically includes following steps:
Described copper metal film layer is pressed dry film；
Described copper metal film layer is exposed；
Described copper metal film layer after exposure is cut into slices；
Copper metal film layer after section is carried out dry film development；
Described copper metal film layer after development is etched；
The ito film layer being pointed to described copper metal film layer visible area is etched, to obtain described default ito film layer pattern.
4. method as claimed in claim 3, it is characterised in that " be pointed to the ito film layer of described copper metal film layer visible area
Be etched, to obtain described default ito film layer pattern " step after, further comprising the steps of:
Remove the dry film on described copper metal film layer.
5. the method as described in claim 3 or 4, it is characterised in that described method uses coiled strip film laminator to described metallic copper
Film layer carries out pressing dry film, described coiled strip film laminator is taken turns temperature and lower whorl temperature is 110 DEG C～130 DEG C, described coiled strip pressure
The film speed that press dry of film machine is (0.8～1.2) m/min.
6. method as claimed in claim 5, it is characterised in that when described copper metal film layer is pressed dry film, it press dry
The pressure of film is 0.45MPa～0.5MPa, and its discharge pressing dry film is (20～30) ml/min.
7. the method as described in claim 3 or 4, it is characterised in that described method uses exposure machine to described copper metal film layer
Being exposed, the power of lamp tube of described exposure machine is (4～6) KW, and the exposure guide rule of described exposure machine is (6～16) rank, described exposure
The energy of ray machine is (60～90) mj/cm2。
8. the method as described in claim 3 or 4, it is characterised in that described method uses development etching line by the gold after section
Belong to copper film layer carry out dry film development and be etched by the described copper metal film layer after development.
9. method as claimed in claim 8, it is characterised in that temperature when using described development etching line to develop is
(28～32) DEG C, using the concentration that described development etching line carries out developing is (8.5～10.5) g/L, during development spray for
(1.0～1.4) kg/cm2, the speed of development is (3.8～4.2) m/min.
10. method as claimed in claim 8, it is characterised in that use described development etching line that described copper metal film layer is entered
Concentration during row etching is (0.60～1.10) mol/L, spraying as (1.0～1.4) kg/cm during etching2, the temperature of etching is
(30～40) DEG C, and etching speed be (2.0～4.2) m/min.
11. methods as claimed in claim 8, it is characterised in that use described development etching line that described ito film layer is lost
Concentration during quarter is (5.50～6.50) mol/L, spraying as (1.0～1.4) kg/cm during etching2, the temperature of etching is (35
～45) DEG C, and etching speed be (2.0～4.2) m/min.
12. methods as claimed in claim 4, it is characterised in that when step " removes the dry film on described copper metal film layer ",
Go the concentration of dry film for (8.0～10) g/L, go the spraying as (1.0～1.4) kg/cm of dry film2, go the temperature of dry film for (45～
DEG C, and to go the speed of dry film be (3.8～4.2) m/min 55).
13. the method for claim 1, it is characterised in that in step s3, specifically include following steps:
Carry out printing acidproof on the non-visible area surface of described copper metal film layer；
The non-visible area surface of described copper metal film layer is dried, to form described protecting film on described non-visible area surface
Layer.
14. methods as claimed in claim 13, it is characterised in that the acidproof thickness of described printing is (10～11) um.
15. the method for claim 1, it is characterised in that described method uses development etching line to described copper metal film
Layer is etched, and when being etched the copper metal film layer in described visible area, the concentration of its etching is (0.60～1.10)
Mol/L, spraying as (1.0～1.4) kg/cm during etching2, the temperature of etching is (30～40) DEG C, and the speed of etching is
(2.0～4.2) m/min.
16. the method for claim 1, it is characterised in that described method uses the mode of etching to described copper metal film
The protective layer on layer non-visible area surface is removed, and concentration during etching is (8.0～10) g/L, spraying as (1.0 during etching
～1.4) kg/cm2, the temperature of etching is (45～55) DEG C, and the speed of etching is (3.8～4.2) m/min.
17. 1 kinds of touch screens, it is characterised in that described touch screen uses the touch screen described in claim 1 to 16 any one
Copper wiring method prepares.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610653312.1A CN106293230A (en) | 2016-08-10 | 2016-08-10 | A kind of touch screen copper wiring method and touch screen |
| PCT/CN2016/101032 WO2018028037A1 (en) | 2016-08-10 | 2016-09-30 | Touch screen copper processing method, and touch screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610653312.1A CN106293230A (en) | 2016-08-10 | 2016-08-10 | A kind of touch screen copper wiring method and touch screen |
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| Publication Number | Publication Date |
|---|---|
| CN106293230A true CN106293230A (en) | 2017-01-04 |
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ID=57668032
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610653312.1A Pending CN106293230A (en) | 2016-08-10 | 2016-08-10 | A kind of touch screen copper wiring method and touch screen |
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| WO (1) | WO2018028037A1 (en) |
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| CN102279684A (en) * | 2011-08-30 | 2011-12-14 | 深圳市豪威薄膜技术有限公司 | Method for manufacturing novel electrode lead capacitive screen, novel electrode lead capacitive screen and touch screen terminal |
| KR20130091518A (en) * | 2012-02-08 | 2013-08-19 | (주)이엔에이치 | Electrostatic capacity type touch screen panel and method for fabricating the same |
| CN103605448A (en) * | 2013-11-28 | 2014-02-26 | 广东泰通科技股份有限公司 | Manufacturing method for integrally forming circuit diagram of film-structure capacitive touch screen sensor and product manufactured through manufacturing method |
| CN103943556A (en) * | 2014-04-28 | 2014-07-23 | 上海集成电路研发中心有限公司 | Method for processing electrocoppering film used for semiconductor copper connection process |
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|---|---|---|---|---|
| KR101121002B1 (en) * | 2011-01-18 | 2012-03-13 | 이펀 테크놀러지 컴퍼니, 리미티드 | Transparent conductive film |
| CN102156601A (en) * | 2011-05-26 | 2011-08-17 | 意力(广州)电子科技有限公司 | Method for manufacturing conducting circuit of capacitive touch screen |
| CN102879998A (en) * | 2012-09-18 | 2013-01-16 | 深圳力合光电传感技术有限公司 | Method for etching touch screen |
| CN104850281A (en) * | 2014-02-18 | 2015-08-19 | 谭本志 | Production process for capacitive touch screen |
| JP6417556B2 (en) * | 2014-03-28 | 2018-11-07 | メック株式会社 | Wiring forming method and etching solution |
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2016
- 2016-08-10 CN CN201610653312.1A patent/CN106293230A/en active Pending
- 2016-09-30 WO PCT/CN2016/101032 patent/WO2018028037A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102279684A (en) * | 2011-08-30 | 2011-12-14 | 深圳市豪威薄膜技术有限公司 | Method for manufacturing novel electrode lead capacitive screen, novel electrode lead capacitive screen and touch screen terminal |
| KR20130091518A (en) * | 2012-02-08 | 2013-08-19 | (주)이엔에이치 | Electrostatic capacity type touch screen panel and method for fabricating the same |
| CN103605448A (en) * | 2013-11-28 | 2014-02-26 | 广东泰通科技股份有限公司 | Manufacturing method for integrally forming circuit diagram of film-structure capacitive touch screen sensor and product manufactured through manufacturing method |
| CN103943556A (en) * | 2014-04-28 | 2014-07-23 | 上海集成电路研发中心有限公司 | Method for processing electrocoppering film used for semiconductor copper connection process |
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