CN106292065A - Quantum dot film and backlight module - Google Patents
Quantum dot film and backlight module Download PDFInfo
- Publication number
- CN106292065A CN106292065A CN201610790462.7A CN201610790462A CN106292065A CN 106292065 A CN106292065 A CN 106292065A CN 201610790462 A CN201610790462 A CN 201610790462A CN 106292065 A CN106292065 A CN 106292065A
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- Prior art keywords
- layer
- refractive index
- quantum dot
- film material
- antireflection
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Laminated Bodies (AREA)
Abstract
A kind of quantum dot film and backlight module, described backlight module includes quantum dot film: described quantum dot film includes: substrate layer, cushion, quantum dot layer, protective layer, water oxygen barrier layer, hardened layer, the first antireflection layer；Described first antireflection layer is anti-reflection to white light.The present invention arranges the first antireflection layer to reduce the loss of the exciting light outgoing that quantum dot layer produces.
Description
Technical field
The invention belongs to technical field of liquid crystal display, be specifically related to a kind of quantum dot film and backlight module.
Background technology
Through semicentennial development and research, liquid crystal display (LCD) has become as leading flat panel display.By
It is the most luminous in LCD itself, so they need to use backlight.Cold cathode fluorescence lamp (CCFL) was once most common backlight,
But it may only realize the colour gamut of 75%NTSC, so in order to obtain broader colour gamut, higher brightness and lower energy consumption,
White light-emitting diode (WLED) instead of rapidly the position of CCFL, becomes main backlight.But backlight based on WLED
Source, its brightness and contrast is the most relatively low.So, research worker is devoted to the back light source technique of development renewal to improve these
Problem.
Quantum dot film is a kind of blooming piece substituting lower diffusion barrier in LCD backlight module.Compare common
White light LEDs, uses the backlight module of blue-ray LED collocation quantum dot film, can be obviously improved the color saturation of liquid crystal display, and
And brightness can be improved while improving colour gamut, reduce power consumption.Its principle is: the quantum dot (Quantum that quantum dot film contains
Dot) it is the nanocrystal of quasi-zero dimension, by a small amount of atomic building, the most spherical or class is spherical in form, it is by quasiconductor material
Material (generally elementary composition by IIB～VI B or IIIB～VB) make, stable diameter 2～20nm nanoparticle.These are received
Rice corpuscles can inspire the light of higher wavelength under specific wavelength light irradiates, and quantum dot film (QDEF) is owing to embedded in green light
With the quantum dot of HONGGUANG, can excite under the irradiation of blue-ray LED backlight green glow and HONGGUANG, the green glow excited and HONGGUANG with through thin
The blue light of film is mixed together into white light, thus improves the illumination effect of LCD backlight.
At present, quantum dot film there is problems in that the backlight of 1. excitation quantum points from air incidence to base material (glass or
Film) time, owing to the refractive index of Presence of an interface is different, there is reflection thus lose in the light of some, causes the utilization of backlight
Rate is low.2. the exciting light formed by backlight excitation quantum point, when inciding air from the material of the superiors or protective layer, also
Equally exist interfacial refraction rate different, cause the loss of exciting light outgoing.
Summary of the invention
For overcoming above-mentioned deficiency of the prior art, present invention aim at providing a kind of quantum dot film and backlight module,
Light efficiency is excited for improve quantum dot film.
For achieving the above object and other relevant purposes, present invention provide the technical scheme that a kind of quantum dot film, successively
Including: substrate layer, cushion, quantum dot layer, protective layer, water oxygen barrier layer, hardened layer, the first antireflection layer；Described first subtracts
Reflecting layer is anti-reflection to white light.
Preferably technical scheme is: described first antireflection layer includes the antireflection film layer of more than two-layer or two-layer, described
The ordering of antireflection film layer is high refractive index film material and low refractive index film material is spaced or low refractive index film material and high folding
Penetrate rate film material to be spaced, the refractive index value scope of described high refractive index film material 1.90～2.50, described low refractive index film
The refractive index value scope of material is 1.35～1.60.
Preferably technical scheme is: described high refractive index film material is ZnS, TiO2、Ti3O5、Nb2O5、Ta2O5With in ZnO
At least one, described low refractive index film material is cryolite, SiO2And MgF2In at least one.
Preferably technical scheme is: the physics thickness of described first antireflection layer is 10nm～500nm.
Preferably technical scheme is: described quantum dot film includes that the second antireflection layer, described second antireflection layer are arranged at
Described substrate layer deviates from that side of described cushion, and described second antireflection layer is anti-reflection to white light.
Preferably technical scheme is: described second antireflection layer includes the antireflection film layer of more than two-layer or two-layer, described
The ordering of antireflection film layer is high refractive index film material and low refractive index film material is spaced or low refractive index film material and high folding
Penetrate rate film material to be spaced, the refractive index value scope of described high refractive index film material 1.90～2.50, described low refractive index film
The refractive index value scope of material is 1.35～1.60.
Preferably technical scheme is: the physics thickness of described second antireflection layer is 10nm～500nm.
Preferably technical scheme is: described high refractive index film material is ZnS, TiO2、Ti3O5、Nb2O5、Ta2O5With in ZnO
At least one, described low refractive index film material is cryolite, SiO2And MgF2In at least one.
Preferably technical scheme is: described protective layer is fire resistant resin, described fire resistant resin be acrylic resin,
Epoxylite or polyimide based resin.
For achieving the above object and other relevant purposes, present invention provide the technical scheme that a kind of backlight module, including
Quantum dot film described in technique scheme.
Owing to technique scheme is used, the present invention compared with prior art has the advantage, that
1, the present invention is arranged anti-reflection the first antireflection layer of white light to reduce the loss of exciting light outgoing.
2, to arrange the backlight produced the second antireflection layer that white light is anti-reflection to backlight anti-reflection to improve backlight for the present invention
Utilization rate,
Accompanying drawing explanation
Fig. 1 is the structural representation of quantum dot film embodiment one.
Fig. 2 is the structural representation of quantum dot film embodiment two.
Fig. 3 is the first antireflection layer structural representation.
Fig. 4 is the first antireflection layer light transmittance schematic diagram.
In the figures above: 1, substrate layer；2, cushion；3, quantum dot layer；4, protective layer；5, water oxygen barrier layer；6, hardening
Layer；7, the first antireflection layer；8, the second antireflection layer；9, five oxidation three titanium films；10, silicon dioxide film.
Detailed description of the invention
By particular specific embodiment, embodiments of the present invention being described below, those skilled in the art can be by this explanation
Content disclosed by book understands other advantages and effect of the present invention easily.
Refer to Fig. 1 to Fig. 4.It should be clear that structure depicted in this specification institute accompanying drawings, ratio, size etc., the most only in order to
Coordinating the content disclosed in description, understand for those skilled in the art and read, being not limited to the present invention can be real
The qualifications executed, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the tune of size
Whole, under not affecting effect that the present invention can be generated by and the purpose that can reach, all should still fall in disclosed skill
In the range of art content obtains and can contain.Meanwhile, in this specification cited as " on ", D score, "left", "right", " middle " and
The term of " one " etc., is merely convenient to understanding of narration, and is not used to limit the enforceable scope of the present invention, its relativeness
It is altered or modified, is changing under technology contents without essence, when being also considered as the enforceable category of the present invention.
Embodiment one: as it is shown in figure 1, a kind of quantum dot film, include successively: substrate layer 1, cushion 2, quantum dot layer 3,
Protective layer 4, water oxygen barrier layer 5, hardened layer the 6, first antireflection layer 7；Described first antireflection layer 7 is anti-reflection to white light.Described slow
Rushing layer 2 and be equivalent to one layer of adhesive, it promotes quantum dot layer 3 and base material for cohering fixing by quantum dot layer 3 with substrate layer 1
Peeling force between layer 1.Protective layer 4 is formed on quantum dot layer 3 and is encapsulated by this quantum dot layer 3, so that this quantum
The various piece of some layer 3 all can well be protected.This is because quantum dot layer 3 structural instability, therefore need after film forming
To make this protective layer 4 immediately and carry out pre-protection.Obviously, protective layer 4 uses the material that can protect quantum dot Rotating fields stability
Material is formed.In view of the water oxygen barrier layer 5 on this protective layer 4 make time need to through high-temperature process, therefore this protective layer 4 preferably with
Fire resistant resin material, such as acrylic resin, epoxylite and polyimide based resin.
As it is shown on figure 3, described first antireflection layer 7 is made up of six layers of antireflection film layer, ordering is: 0.222H/
0.472L/0.724H/0.272L/0.620H/1.122L.H represents high refractive index film material.L represents low refractive index film material.H is concrete
Being five oxidation three titanium films 9, L is specially silicon dioxide film 10.Numeric representation is the optical thickness of film.Five oxidation Tritanium/Trititanium (Ti3O5)
Refractive Index of Material be 2.42, silicon dioxide (SiO2) refractive index be 1.47.Light transmittance such as Fig. 4 institute of the first antireflection layer 7
Showing, the abscissa of Fig. 4 is wavelength, and vertical coordinate is light transmittance.First antireflection layer dialogue light entirety light transmittance is the highest, therefore dialogue
Light is anti-reflection.
In present embodiment, the physics thickness of described first antireflection layer is 60nm.In other detailed description of the invention, institute
The physics thickness stating the first antireflection layer is 10nm～500nm.
Embodiment two: as in figure 2 it is shown, quantum dot film includes that the second antireflection layer 8, described second antireflection layer are arranged at
Substrate layer is not towards that side surface of cushion, and described second antireflection layer is anti-reflection to white light.Described second antireflection layer by
Six layers of antireflection film layer composition, described second antireflection layer and the first antireflection layer structure are identical.Light transmittance is the most identical.
Present invention also offers a kind of backlight module, this backlight module includes quantum dot film, and this quantum dot film is by this enforcement
The such scheme of mode prepares, and other structures of backlight module use prior art.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any ripe
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage knowing this technology.Cause
This, have usually intellectual such as complete with institute under technological thought without departing from disclosed spirit in art
All equivalences become are modified or change, and must be contained by the claim of the present invention.
Claims (10)
1. a quantum dot film, it is characterised in that: include successively: substrate layer, cushion, quantum dot layer, protective layer, water oxygen intercept
Layer, hardened layer, the first antireflection layer；Described first antireflection layer is anti-reflection to white light.
Quantum dot film the most according to claim 1, it is characterised in that: described first antireflection layer include two-layer or two-layer with
On antireflection film layer, the ordering of described antireflection film layer be high refractive index film material and low refractive index film material is spaced or
Low refractive index film material and high refractive index film material are spaced, the refractive index value scope of described high refractive index film material 1.90～
2.50, the refractive index value scope of described low refractive index film material is 1.35～1.60.
Quantum dot film the most according to claim 2, it is characterised in that: described high refractive index film material is ZnS, TiO2、Ti3O5、
Nb2O5、Ta2O5With at least one in ZnO, described low refractive index film material is cryolite, SiO2And MgF2In at least one.
Quantum dot film the most according to claim 1, it is characterised in that: the physics thickness of described first antireflection layer is 10nm
～500nm.
Quantum dot film the most according to claim 1, it is characterised in that: described quantum dot film includes the second antireflection layer, institute
Stating the second antireflection layer to be arranged at described substrate layer and deviate from that side of described cushion, white light is increased by described second antireflection layer
Thoroughly.
Quantum dot film the most according to claim 5, it is characterised in that: described second antireflection layer include two-layer or two-layer with
On antireflection film layer, the ordering of described antireflection film layer be high refractive index film material and low refractive index film material is spaced or
Low refractive index film material and high refractive index film material are spaced, the refractive index value scope of described high refractive index film material 1.90～
2.50, the refractive index value scope of described low refractive index film material is 1.35～1.60.
Quantum dot film the most according to claim 5, it is characterised in that: the physics thickness of described second antireflection layer is 10nm
～500nm.
Quantum dot film the most according to claim 6, it is characterised in that: described high refractive index film material is ZnS, TiO2、Ti3O5、
Nb2O5、Ta2O5With at least one in ZnO, described low refractive index film material is cryolite, SiO2And MgF2In at least one.
Quantum dot film the most according to claim 1, it is characterised in that described protective layer is fire resistant resin, described resistance to height
Temperature resin is acrylic resin, epoxylite or polyimide based resin.
10. a backlight module, it is characterised in that: include the quantum dot film according to any one of claim 1～9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610790462.7A CN106292065A (en) | 2016-08-31 | 2016-08-31 | Quantum dot film and backlight module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610790462.7A CN106292065A (en) | 2016-08-31 | 2016-08-31 | Quantum dot film and backlight module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106292065A true CN106292065A (en) | 2017-01-04 |
Family
ID=57673329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610790462.7A Pending CN106292065A (en) | 2016-08-31 | 2016-08-31 | Quantum dot film and backlight module |
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| Country | Link |
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| CN (1) | CN106292065A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110542940A (en) * | 2019-09-30 | 2019-12-06 | 东莞市光志光电有限公司 | High-brightness optical reflector plate |
| CN112631024A (en) * | 2020-12-25 | 2021-04-09 | 舟山扑浪实业有限公司 | Quantum dot color film substrate, quantum dot liquid crystal display panel and quantum dot display device |
| CN113075819A (en) * | 2021-03-24 | 2021-07-06 | 惠州市华星光电技术有限公司 | Backlight module and liquid crystal display device |
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| JP2016095426A (en) * | 2014-11-14 | 2016-05-26 | 富士フイルム株式会社 | Wavelength conversion member and backlight unit including the same, liquid crystal display device, and manufacturing method of wavelength conversion member |
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| CN112631024A (en) * | 2020-12-25 | 2021-04-09 | 舟山扑浪实业有限公司 | Quantum dot color film substrate, quantum dot liquid crystal display panel and quantum dot display device |
| CN113075819A (en) * | 2021-03-24 | 2021-07-06 | 惠州市华星光电技术有限公司 | Backlight module and liquid crystal display device |
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Application publication date: 20170104 |