CN106290487A - A kind of semiconductor gas sensor temperature compensation - Google Patents

A kind of semiconductor gas sensor temperature compensation Download PDF

Info

Publication number
CN106290487A
CN106290487A CN201610695562.1A CN201610695562A CN106290487A CN 106290487 A CN106290487 A CN 106290487A CN 201610695562 A CN201610695562 A CN 201610695562A CN 106290487 A CN106290487 A CN 106290487A
Authority
CN
China
Prior art keywords
gas sensor
temperature
resistance
gas
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610695562.1A
Other languages
Chinese (zh)
Inventor
卢志旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201610695562.1A priority Critical patent/CN106290487A/en
Publication of CN106290487A publication Critical patent/CN106290487A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/122Circuits particularly adapted therefor, e.g. linearising circuits
    • G01N27/123Circuits particularly adapted therefor, e.g. linearising circuits for controlling the temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

This case is a kind of semiconductor gas sensor temperature compensation, comprises the following steps: step 1): select a gas sensor to test in multiple gas sensors by industrial computer;Step 2): control multiple sensor test air saddle and be supplied to the gas concentration value needed for multiple gas sensor test;Step 3): change the gas concentration value needed for multiple gas sensor tests by gas concentration controller;Step 4): controlling high-low temperature chamber by industrial computer is the temperature environment that multiple gas sensor changes needed for temperature-compensating;Step 5): change the gas concentration value needed for multiple gas sensor test;Step 6): send all primary datas to industrial computer;Step 7): increase on electric bridge and compensate resistance, formed and compensate resistor network;Step 8): repetition step one is to eight, until the most having formed compensation resistor network in all passages.The semiconductor gas sensor temperature compensation of this case is simple and practical, flexible, easy to spread.

Description

A kind of semiconductor gas sensor temperature compensation
Technical field
The present invention relates to sensor testing method, particularly relate to a kind of semiconductor gas sensor temperature compensation.
Background technology
Gas sensor is relatively big by external action, and especially test is that external temperature is relatively big on the impact of its test result, because of This, domestic sensor producer be the most mostly employing experience penalty method to carry out the temperature-compensating of gas sensor, i.e. in institute Have on the product of same batch and add same compensation resistance, re-test after compensation, the most repeatedly revise resistance value according to drift value, so Temperature compensation efficiency low, and the compensation precision of this semiconductor gas sensor temperature compensation also can not get ensure.
Summary of the invention
For overcoming the deficiencies in the prior art, it is an object of the invention to provide a kind of semiconductor gas sensor temperature-compensating Method, to realize the mass of gas sensor, high precision temperature compensation.
For achieving the above object, the present invention is achieved through the following technical solutions:
A kind of semiconductor gas sensor temperature compensation, comprises the following steps:
Step 1): control multichannel bridge test module by industrial computer and select a gas to pass in multiple gas sensors Sensor is tested, and controlling high-low temperature chamber by industrial computer provides the temperature needed for temperature-compensating for the plurality of gas sensor Environment;
Step 2): control multiple sensor test air saddle by gas concentration controller and be supplied to the plurality of gas biography Gas concentration value needed for sensor test, then passes through the gas sensing that programmable power supply selects to multichannel bridge test module Device provides reference voltage, then passes through at the beginning of the electric bridge that circuit tester gathers the gas sensor that multichannel bridge test module selects Beginning data;
Step 3): control described multiple sensor test air saddle by gas concentration controller and change the plurality of gas Gas concentration value needed for sensor test, then gather, by circuit tester, the gas sensor that multichannel bridge test module selects The primary data of electric bridge;
Step 4): controlling high-low temperature chamber by industrial computer is the temperature that the plurality of gas sensor changes needed for temperature-compensating Degree environment, then it is supplied to the plurality of gas sensing by gas concentration controller control described multiple sensor test air saddle Gas concentration value needed for device test, then passes through the gas sensor of circuit tester collection multichannel bridge test module selection The primary data of electric bridge;
Step 5): control described multiple sensor test air saddle by gas concentration controller and change the plurality of gas Gas concentration value needed for sensor test, then gather, by circuit tester, the gas sensor that multichannel bridge test module selects The primary data of electric bridge;
Step 6): by circuit tester to all primary datas are sent industrial computer, then by industrial computer according to described initially Data draw offset data, form the compensation resistor network of the electric bridge of described gas sensor;
Step 7): increase on electric bridge and compensate resistance, formed and compensate resistor network;
Step 8): repetition step one is to step 8, until the most having formed the gas sensing in this passage in all passages The compensation resistor network of the electric bridge of device.
Preferably, described semiconductor gas sensor temperature compensation, wherein, in described step one, temperature is mended Repaying required temperature environment is 20 DEG C.
Preferably, described semiconductor gas sensor temperature compensation, wherein, in described step 2, test institute The gas concentration value needed is zero.
Preferably, described semiconductor gas sensor temperature compensation, wherein, in described step 3, test institute The gas concentration value needed is full scale gas concentration value.
Preferably, described semiconductor gas sensor temperature compensation, wherein, in described step 4, temperature is mended Repaying required temperature environment is 60 DEG C.
Preferably, described semiconductor gas sensor temperature compensation, wherein, in described step 4, test institute The gas concentration value needed is zero.
Preferably, described semiconductor gas sensor temperature compensation, wherein, in described step 5, test institute The gas concentration value needed is full scale gas concentration value.
Preferably, described semiconductor gas sensor temperature compensation, wherein, described electric bridge includes the first electricity Resistance, the second resistance, the 3rd resistance and the 4th resistance, described first resistance and described second resistant series, described 3rd resistance with Described 4th resistant series, the first resistance after described series connection and the second resistance and the 3rd resistance after described series connection and the 4th electricity Resistance parallel connection.
Preferably, described semiconductor gas sensor temperature compensation, wherein, described compensation resistor network includes Brachium pontis compensating unit and Bridge circuit compensation unit, described brachium pontis compensating unit is for being decreased or increased in electric bridge the electricity in certain brachium pontis Resistance resistance, described Bridge circuit compensation unit is for being decreased or increased the resistance of whole electric bridge.
Preferably, described semiconductor gas sensor temperature compensation, wherein, high-low temperature chamber is by for changing The heater composition of affiliated semiconductor gas sensor gas sensitive temperature, described heater automatically adjusts according to ambient temperature and adds Thermal power.
Compared with prior art, the method have the advantages that (1) compensates system by described pressure sensor temperature System and temperature compensation thereof, it is possible to achieve the temperature-compensating of pressure transducer in batches, be respectively directed to each sensor not Carry out under synthermal testing and calculate the resistance of resistance in its electric bridge, accurately calculated by industrial computer according to the mathematical model compensated Compensation resistor network required for every sensor, and select resistance welding to formation compensation in electric bridge according to the data calculated Resistor network, the precision temperature completing every sensor compensates;(2) on the other hand, when semiconductor gas sensor works, when During variation of ambient temperature, by changing the heater power of semiconductor gas sensor, the gas sensitive of sensor is made to be operated in The state of temperature constant, so that semiconductor gas sensor is not affected by ambient temperature, works more stable, and precision is more High.The semiconductor gas sensor temperature compensation of this case make this sensor have easy to use, highly sensitive, precision is high Advantage, the method has advantage simple and practical, flexible, easy to spread.
Accompanying drawing explanation
The semiconductor gas sensor temperature compensation flow chart that Fig. 1 provides for the embodiment of the present invention;
The structure compensating system in the semiconductor gas sensor temperature compensation that Fig. 2 provides for the embodiment of the present invention is shown It is intended to;
Electric bridge before temperature-compensating in the semiconductor gas sensor temperature compensation that Fig. 3 provides for the embodiment of the present invention Structure chart;
Electric bridge after temperature-compensating in the semiconductor gas sensor temperature compensation that Fig. 4 provides for the embodiment of the present invention Structure chart.
In figure, 1: multiple sensor test pressure seat;2: semiconductor gas sensor;3: high-low temperature chamber;4: Stress control Instrument;5: pneumatic circuit;6: multichannel bridge test module;7: programmable power supply;8: circuit tester;9: industrial computer;G1: the first electricity Resistance;G2: the second resistance;G3: the three resistance;G4: the four resistance;R1: the first compensates resistance;R2: the second compensates resistance;R3: the Three compensate resistance;R4: the four compensates resistance;R5: the five compensates resistance;R6: the six compensates resistance;R7: the seven compensates resistance;Vi +: reference voltage positive pole;Vi-: reference voltage negative pole;Vo+: output voltage positive pole;Vo-: output voltage negative pole.
Detailed description of the invention
The present invention is described in further detail below in conjunction with the accompanying drawings, to make those skilled in the art with reference to description literary composition Word can be implemented according to this.
A kind of semiconductor gas sensor temperature compensation, refers to attached Fig. 1 and 2, comprises the following steps:
Step 1): control multichannel bridge test module by industrial computer and select a gas to pass in multiple gas sensors Sensor is tested, and controlling high-low temperature chamber by industrial computer provides the temperature ring needed for temperature-compensating for multiple gas sensors Border;
Step 2): control multiple sensor test air saddle by gas concentration controller and be supplied to multiple gas sensor Gas concentration value needed for test, then passes through the gas sensor that programmable power supply selects to multichannel bridge test module and carries For reference voltage, then pass through the initial number that circuit tester gathers the electric bridge of the gas sensor that multichannel bridge test module selects According to;
Step 3): control described multiple sensor test air saddle by gas concentration controller and change the plurality of gas Gas concentration value needed for sensor test, then gather, by circuit tester, the gas sensor that multichannel bridge test module selects The primary data of electric bridge;
Step 4): controlling high-low temperature chamber by industrial computer is the temperature ring that multiple gas sensor changes needed for temperature-compensating Border, then needed for controlling multiple sensor test by gas concentration controller air saddle is supplied to multiple gas sensor test Gas concentration value, then passes through the initial number that circuit tester gathers the electric bridge of the gas sensor that multichannel bridge test module selects According to;
Step 5): control multiple sensor test air saddle by gas concentration controller and change the survey of multiple gas sensors Gas concentration value needed for examination, then gathered the electric bridge of the gas sensor that multichannel bridge test module selects by circuit tester Primary data;
Step 6): by circuit tester to all primary datas are sent industrial computer, then by industrial computer according to primary data Draw offset data, form the compensation resistor network of the electric bridge of gas sensor;
Step 7): increase on electric bridge and compensate resistance, formed and compensate resistor network;
Step 8): repetition step one is to step 8, until the most having formed the gas sensing in this passage in all passages The compensation resistor network of the electric bridge of device, the structure chart of the electric bridge that temperature-compensating is forward and backward refers to accompanying drawing 3 and 4.
Further, in step one, the temperature environment needed for temperature-compensating is 20 DEG C.
Further, in step 2, the gas concentration value needed for test is zero.
Further, in step 3, the gas concentration value needed for test is full scale gas concentration value.
Further, in step 4, the temperature environment needed for temperature-compensating is 60 DEG C.
Further, in step 4, the gas concentration value needed for test is zero.
Further, in step 5, the gas concentration value needed for test is full scale gas concentration value.
Further, electric bridge includes the first resistance, the second resistance, the 3rd resistance and the 4th resistance, the first resistance and second Resistant series, the 3rd resistance and the 4th resistant series, the first resistance after series connection and the second resistance and the 3rd after described series connection Resistance and the 4th resistor coupled in parallel.
Further, compensating resistor network and include brachium pontis compensating unit and Bridge circuit compensation unit, brachium pontis compensating unit is used for Resistance in certain brachium pontis is decreased or increased in electric bridge, and Bridge circuit compensation unit is for being decreased or increased the resistance of whole electric bridge Resistance.
By described temperature compensation system for pressure sensors and temperature compensation thereof, it is possible to achieve pressure transducer in batches Temperature-compensating, be respectively directed to each sensor and carry out at different temperatures testing and calculate the resistance of resistance in its electric bridge, The compensation resistor network required for every sensor is accurately calculated by industrial computer according to the mathematical model compensated, and according to calculating The data gone out are selected resistance welding and are formed compensation resistor network in electric bridge, and the precision temperature completing every sensor compensates.
Further, high-low temperature chamber is by the heater for changing affiliated semiconductor gas sensor gas sensitive temperature Composition, described heater automatically adjusts heating power according to ambient temperature.When semiconductor gas sensor works, when environment temperature During degree change, by changing the heater power of semiconductor gas sensor, the gas sensitive of sensor is made to be operated in temperature permanent Fixed state, so that semiconductor gas sensor is not affected by ambient temperature, works more stable, and precision is higher.This case Semiconductor gas sensor temperature compensation make this sensor have advantage easy to use, highly sensitive, that precision is high, The method has advantage simple and practical, flexible, easy to spread.
Although embodiment of the present invention are disclosed as above, but it is not restricted in description and embodiment listed Using, it can be applied to various applicable the field of the invention completely, for those skilled in the art, and can be easily Realizing other amendment, therefore under the general concept limited without departing substantially from claim and equivalency range, the present invention does not limit In specific details with shown here as the legend with description.

Claims (10)

1. a semiconductor gas sensor temperature compensation, it is characterised in that comprise the following steps:
Step 1): control multichannel bridge test module by industrial computer in multiple gas sensors, select a gas sensor Testing, controlling high-low temperature chamber by industrial computer provides the temperature ring needed for temperature-compensating for the plurality of gas sensor Border;
Step 2): control multiple sensor test air saddle by gas concentration controller and be supplied to the plurality of gas sensor Gas concentration value needed for test, then passes through the gas sensor that programmable power supply selects to multichannel bridge test module and carries For reference voltage, then pass through the initial number that circuit tester gathers the electric bridge of the gas sensor that multichannel bridge test module selects According to;
Step 3): control described multiple sensor test air saddle by gas concentration controller and change the plurality of gas sensing Gas concentration value needed for device test, then the electricity of the gas sensor that multichannel bridge test module selects is gathered by circuit tester The primary data of bridge;
Step 4): controlling high-low temperature chamber by industrial computer is the temperature ring that the plurality of gas sensor changes needed for temperature-compensating Border, then it is supplied to the survey of the plurality of gas sensor by gas concentration controller control described multiple sensor test air saddle Gas concentration value needed for examination, then passes through circuit tester and gathers the electric bridge of the gas sensor that multichannel bridge test module selects Primary data;
Step 5): control described multiple sensor test air saddle by gas concentration controller and change the plurality of gas sensing Gas concentration value needed for device test, then the electricity of the gas sensor that multichannel bridge test module selects is gathered by circuit tester The primary data of bridge;
Step 6): by circuit tester to all primary datas are sent industrial computer, then by industrial computer according to described primary data Draw offset data, form the compensation resistor network of the electric bridge of described gas sensor;
Step 7): increase on electric bridge and compensate resistance, formed and compensate resistor network;
Step 8): repetition step one to step 8, until the gas sensor the most formed in all passages in this passage The compensation resistor network of electric bridge.
Semiconductor gas sensor temperature compensation the most according to claim 1, it is characterised in that described step one In, the temperature environment needed for temperature-compensating is 20 DEG C.
Semiconductor gas sensor temperature compensation the most according to claim 1, it is characterised in that described step 2 In, the gas concentration value needed for test is zero.
Semiconductor gas sensor temperature compensation the most according to claim 1, it is characterised in that described step 3 In, the gas concentration value needed for test is full scale gas concentration value.
Semiconductor gas sensor temperature compensation the most according to claim 1, it is characterised in that described step 4 In, the temperature environment needed for temperature-compensating is 60 DEG C.
Semiconductor gas sensor temperature compensation the most according to claim 1, it is characterised in that described step 4 In, the gas concentration value needed for test is zero.
Semiconductor gas sensor temperature compensation the most according to claim 1, it is characterised in that described step 5 In, the gas concentration value needed for test is full scale gas concentration value.
Semiconductor gas sensor temperature compensation the most according to claim 1, it is characterised in that described electric bridge includes First resistance, the second resistance, the 3rd resistance and the 4th resistance, described first resistance and described second resistant series, the described 3rd Resistance and described 4th resistant series, the first resistance after described series connection and the second resistance and the 3rd resistance after described series connection and 4th resistor coupled in parallel.
Semiconductor gas sensor temperature compensation the most according to claim 1, it is characterised in that described compensation resistance Network includes that brachium pontis compensating unit and Bridge circuit compensation unit, described brachium pontis compensating unit are used for being decreased or increased certain bridge in electric bridge Resistance in arm, described Bridge circuit compensation unit is for being decreased or increased the resistance of whole electric bridge.
Semiconductor gas sensor temperature compensation the most according to claim 1, it is characterised in that high-low temperature chamber is Being made up of the heater being used for changing affiliated semiconductor gas sensor gas sensitive temperature, described heater is according to ambient temperature Automatically heating power is adjusted.
CN201610695562.1A 2016-08-18 2016-08-18 A kind of semiconductor gas sensor temperature compensation Pending CN106290487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610695562.1A CN106290487A (en) 2016-08-18 2016-08-18 A kind of semiconductor gas sensor temperature compensation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610695562.1A CN106290487A (en) 2016-08-18 2016-08-18 A kind of semiconductor gas sensor temperature compensation

Publications (1)

Publication Number Publication Date
CN106290487A true CN106290487A (en) 2017-01-04

Family

ID=57662358

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610695562.1A Pending CN106290487A (en) 2016-08-18 2016-08-18 A kind of semiconductor gas sensor temperature compensation

Country Status (1)

Country Link
CN (1) CN106290487A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740640A (en) * 1980-08-22 1982-03-06 Hajime Kano Temperature compensating method in humidity measuring device
WO2003016877A1 (en) * 2001-07-26 2003-02-27 Avista Laboratories, Inc. Method of compensating a mos gas sensor, method of manufacturing a mos gas sensor, mos gas sensor, and fuel cell system
CN101975804A (en) * 2010-08-20 2011-02-16 郑州炜盛电子科技有限公司 Semiconductor gas sensor and temperature compensation method
CN102297882A (en) * 2011-05-18 2011-12-28 海南大学 Temperature compensation circuit for semiconductor ozone sensor and compensation method thereof
CN102680518A (en) * 2012-05-31 2012-09-19 河南汉威电子股份有限公司 Compensation type gas sensor and humiture compensation method thereof
CN103048085A (en) * 2011-10-13 2013-04-17 江苏恩泰传感器有限公司 Temperature compensation system of pressure sensor and temperature compensation method thereof
CN103597330A (en) * 2011-05-31 2014-02-19 独立行政法人科学技术振兴机构 Method for temperature compensation in sensor, computation program for method for temperature compensation, computation processing device, and sensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740640A (en) * 1980-08-22 1982-03-06 Hajime Kano Temperature compensating method in humidity measuring device
WO2003016877A1 (en) * 2001-07-26 2003-02-27 Avista Laboratories, Inc. Method of compensating a mos gas sensor, method of manufacturing a mos gas sensor, mos gas sensor, and fuel cell system
CN101975804A (en) * 2010-08-20 2011-02-16 郑州炜盛电子科技有限公司 Semiconductor gas sensor and temperature compensation method
CN102297882A (en) * 2011-05-18 2011-12-28 海南大学 Temperature compensation circuit for semiconductor ozone sensor and compensation method thereof
CN103597330A (en) * 2011-05-31 2014-02-19 独立行政法人科学技术振兴机构 Method for temperature compensation in sensor, computation program for method for temperature compensation, computation processing device, and sensor
CN103048085A (en) * 2011-10-13 2013-04-17 江苏恩泰传感器有限公司 Temperature compensation system of pressure sensor and temperature compensation method thereof
CN102680518A (en) * 2012-05-31 2012-09-19 河南汉威电子股份有限公司 Compensation type gas sensor and humiture compensation method thereof

Similar Documents

Publication Publication Date Title
CN103048085B (en) Temperature compensation system for pressure sensors and temperature compensation thereof
CN103048087B (en) Pressure sensor debugging system and debugging method thereof
CN101299062B (en) Device for checking zinc oxide lightning arrester block property current tester
CN103575414B (en) A kind of electric thermo-couple temperature measurement Error Compensation method
CN109297509B (en) Laser gyro zero offset drift error modeling and compensating method based on tri-state theory
CN105116339B (en) A kind of solid oxide fuel cell pyroelecthc properties simulation system based on dSPACE
CN103080703B (en) Gas flow surveying instrument
CN108982915A (en) A kind of acceleration transducer temperature-compensation method
CN105784215A (en) Pressure sensor temperature compensation method
CN102645578A (en) Automatic simulation calibrating method and device for sensor
CN202305101U (en) Temperature compensation system for pressure sensors
CN105136165A (en) Directional gradient temperature field response characteristic test device suitable for fiber-optic gyroscope
CN106290487A (en) A kind of semiconductor gas sensor temperature compensation
CN104122469B (en) Method for increasing measured seebeck coefficient accuracy of thermoelectric material
CN106768351B (en) Infrared detector single mode changeable responsiveness test macro and method
CN106370322A (en) Tungsten-rhenium thermocouple calibration system
CN103728546A (en) Transistor life test acceleration and operating point stabilization system
CN107783566A (en) Low-power operation method for flow sensor
CN102981529A (en) Blackbody temperature control device for testing infrared dynamic tracking characteristics
CN102890518A (en) Method and system for analyzing accelerometer temperature control system
CN209117203U (en) A kind of Hull Welding temperature monitoring device
Pappas et al. Current mode interfacing circuit for flow sensing based on hot-wire anemometers technique
CN108613751A (en) A kind of high-precision and high-stability temperature polling instrument and preparation method thereof, method for inspecting
CN102506966B (en) Correcting device for flow system
CN101334321A (en) Transistor circuit for estimating component parameter error and temperature sensing device using same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20170104