CN106282944A - Multielement alloy firm resistance and preparation method and multielement target - Google Patents
Multielement alloy firm resistance and preparation method and multielement target Download PDFInfo
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- CN106282944A CN106282944A CN201610796121.0A CN201610796121A CN106282944A CN 106282944 A CN106282944 A CN 106282944A CN 201610796121 A CN201610796121 A CN 201610796121A CN 106282944 A CN106282944 A CN 106282944A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
- C22C19/05—Alloys based on nickel or cobalt based on nickel with chromium
- C22C19/058—Alloys based on nickel or cobalt based on nickel with chromium without Mo and W
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
Abstract
The present invention relates to a kind of multielement alloy firm resistance and preparation method and multielement target, wherein preparation method comprises the following steps: preparation is containing nickel, chromium, manganese and the multielement target of silicon, and is fixed on target platform；The base material preparing photoresist is fixed on rotational workpieces platform；Evacuation makes vacuum be not more than 5 × 10‑4Pa；It is 2.0 × 10 by operating pressure‑2The argon of Pa is filled with ion source, produces plasma through glow discharge, through extractions, bunchy, accelerates, neutralizes and form ar-ion beam and bombard the multielement target on target platform, and sputtering particle is deposited on substrate surface formation multielement alloy firm；Remove remaining photoresist, obtain multielement alloy firm resistance.The present invention uses containing nickel, chromium, manganese and the multielement target of silicon, and the film resistor resistance prepared by ion beam sputter depositing technique up to 200～700K Ω, is made temperature-coefficient of electrical resistance be down to 5ppm simultaneously, and reduces the production cost of film resistor.
Description
Technical field
The present invention relates to sensor technical field, particularly relate to a kind of multielement alloy firm resistance and preparation method with many
Element target.
Background technology
Chrome-nickel alloy thin film is because having high resistivity, low temperature-coefficient of electrical resistance, higher gage factor, good
Heat stability and preparation easily, the advantage such as technical maturity, in thin film resistor in early days and strain ga(u)ge in recent years
It is used widely.But there is problems in actual manufacture: 1) when film thickness is bigger, thin film can be due to internal stress
Excessive and fall off with matrix, have a strong impact on the application of thin film strain meter；2) nickel-chromium thin film has bigger resistance temperature system
Number, is unsuitable in the environment of variations in temperature is violent measuring strain, needs to reduce the temperature-coefficient of electrical resistance of thin film, especially at height
Stress measurement characteristic under Wen, expands the temperature range measured；3) widen the range of strain of thin film, make film resistor at width as far as possible
Range of strain in relatively change with strain linear.
Currently manufactured chrome-nickel alloy thin film mainly uses the method for vacuum evaporation deposition and magnetron sputtering.Vacuum evaporation deposition
Essence can be carried out according to the component of mix powder and cut control, owing to the particle energy of evaporation is low, the thin film adhesion to matrix
Poor, affect other performances of thin film.Magnetron sputtering have particle deposition time substrate temperature is low, sputter rate is high, adhesive force is good
Etc. advantage, but technological parameter is more, and the relation between thin-film technique parameter and film performance is extremely complex.
It would therefore be highly desirable to develop the preparation side of the alloy firm resistance that a kind of temperature-coefficient of electrical resistance is little and film thickness is controlled
Method.
Summary of the invention
The technical problem to be solved in the present invention is, for the defect that the temperature-coefficient of electrical resistance of existing alloy firm resistance is big,
A kind of multielement alloy firm resistance and preparation method and multielement target are provided.
In order to solve above-mentioned technical problem, the invention provides the preparation method of a kind of multielement alloy firm resistance, institute
State preparation method to comprise the following steps:
S1: preparation is containing nickel, chromium, manganese and the multielement target of silicon, and is fixed on target platform；
S2: the base material preparing photoresist is fixed on rotational workpieces platform；
S3: first use the thick evacuation of mechanical pump, re-use molecular pump essence evacuation, make the vacuum in vacuum storehouse reach 5 ×
10-4More than Pa；
S4: be 2.0 × 10 by operating pressure-2The argon of Pa is filled with ion source, produces plasma through glow discharge, through drawing
Go out, bunchy, accelerate, neutralize formed ar-ion beam bombardment target platform on multielement target, sputtered by described multielement target
The nickel that comes, chromium, manganese, four kinds of elementary particles of silicon are deposited on substrate surface, and grow into multielement alloy firm；
S5: remove remaining photoresist, obtains multielement alloy firm resistance.
In the preparation method according to multielement alloy firm resistance of the present invention, in described multielement target each
The mass fraction of element is: nickel, 70～90 parts；Chromium, 10～30 parts；Manganese, 1～10 part；Silicon, 1～10 part.
In the preparation method according to multielement alloy firm resistance of the present invention, in described multielement target each
The mass fraction of element is: nickel, 80～85 parts；Chromium, 15～25 parts；Manganese, 4～6 parts；Silicon, 4～6 parts.
In the preparation method according to multielement alloy firm resistance of the present invention, in described step S1, at room temperature
Lower after nickel, chromium, manganese and the mixing of four kinds of powder of silicon, it is pressed into embryo block, then is processed into described multielement target through 1200 DEG C of high temperature hot pressings
Material.
In the preparation method according to multielement alloy firm resistance of the present invention, in described step S2, rotation is set
Turning work stage rotational velocity is 7～9rpm, and angle of deposit is 45 °.
In the preparation method according to multielement alloy firm resistance of the present invention, in described step S4, arrange from
The ion energy E of sub-beam sputter-depositioni=600eV, ion beam current density Jb=0.6mA/cm2, and control the multielement conjunction formed
The thickness of gold thin film is 3～4nm, and resistance value is 200～700K Ω.
In the preparation method according to multielement alloy firm resistance of the present invention, in described step S4, argon ion
The time of the bundle described multielement target of bombardment is 6～11s.
In the preparation method according to multielement alloy firm resistance of the present invention, in described step S4, by measuring
The thickness of the multielement alloy firm of institute's sputtering sedimentation is measured by unit, and sends the film thickness recorded to the most single
Unit, compares with the predetermined thin film thickness stored, and when the film thickness deposited reaches predetermined thin film thickness, controls institute
State ion source to stop launching ar-ion beam.
Present invention also offers a kind of multielement alloy firm resistance, use foregoing multielement alloy firm resistance
Preparation method prepare.
Present invention also offers a kind of multielement target, described multielement target by nickel, chromium, manganese and four kinds of powder of silicon often
It is pressed into briquet after the lower mixing of temperature, then is pressed into described multielement target through 1200 DEG C of high-temperature hot；Each yuan in described multielement target
The mass fraction of element is: nickel, 70～90 parts；Chromium, 10～30 parts；Manganese, 1～10 part；Silicon, 1～10 part.
Implement the multielement alloy firm resistance of the present invention and preparation method and multielement target, there is following useful effect
Really: the present invention uses containing nickel, chromium, manganese and the multielement target of silicon, obtains multielement by ion beam sputter depositing technique and closes
Gold thin film resistance, brings up to 200～700K Ω by the resistance of film resistor, has high temperature and low temperature two-way stable after annealing,
Make temperature-coefficient of electrical resistance be down to, close to zero, reduce the production cost of multielement alloy firm simultaneously, improve finished product rate.
Accompanying drawing explanation
By description to disclosure embodiment referring to the drawings, above-mentioned and other purposes of the disclosure, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 is the preparation method principle schematic of the multielement alloy firm resistance according to the preferred embodiment of the present invention；Respectively
Label is expressed as follows: 100-ion source；200-multielement target；300-target platform；400-rotational workpieces platform；500-base material；600-
Sputtering particle；700-ar-ion beam.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
A part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill people
The every other embodiment that member is obtained on the premise of not making creative work, broadly falls into the scope of protection of the invention.
Various structural representations according to disclosure embodiment shown in the drawings.These figures are not drawn to scale
, wherein in order to understand the purpose of expression, it is exaggerated some details, and some details may be eliminated.Shown in figure
Various regions, the shape of layer and the relative size between them, position relationship are only exemplary, are likely to be due to system in reality
Make tolerance or technical limitations and deviation, and those skilled in the art have difference according to actually required can additionally design
Shape, size, the regions/layers of relative position.
In the context of the disclosure, when one layer/element is referred to as positioned at another layer/element " on " time, this layer/element can
To be located immediately on this another layer/element, or intermediate layer/element between them, can be there is.If it addition, one towards
In one layer/element be positioned at another layer/element " on ", then when turn towards time, this layer/element may be located at this another layer/unit
Part D score.
Referring to Fig. 1, the preparation method principle for the multielement alloy firm resistance according to the preferred embodiment of the present invention is shown
It is intended to.Below in conjunction with Fig. 1, the preparation method of the multielement alloy firm resistance of the preferred embodiment of the present invention is described in detail.
First, in step sl, preparation contains nickel (Ni), chromium (Cr), manganese (Mn) and the multielement target 200 of silicon (Si),
And be fixed on the target platform 300 of ion beam sputter depositing equipment.Preferably, at normal temperatures nickel, chromium, manganese and four kinds of powder of silicon are mixed
Be pressed into embryo block after conjunction, then through 1200 DEG C of high temperature hot pressings, make a diameter of 120mm, thickness is the multielement target 200 of 10mm.This
Invention provides this multielement target 200 the most accordingly.
Subsequently, in step s 2, the base material 500 preparing photoresist is fixed on rotational workpieces platform 400.This base material
500 is potsherd.Preferably, arranging rotational workpieces platform rotational velocity is 7～9rpm, and angle of deposit is 45 °.
Subsequently, vacuum step is performed in step s3.Specifically, first with the thick evacuation of mechanical pump, then with dividing
Sub-pump essence evacuation so that vacuum≤5 × 10 in vacuum storehouse-4Pa, and during follow-up plasma sputter deposition
Keep this vacuum.
Subsequently, in step s 4, the ion source 100 in vacuum storehouse is filled with noble gas.Herein, the noble gas being filled with
For argon Ar.Then main cathode power supply is opened so that argon glow discharge becomes Ar+Plasma.By Ar+Plasma is by drawing
Go out, bunchy, accelerate, the process such as neutralization forms high energy and high speed Ar+ ion beam 700.Preferably, apply voltage by regulation, arrange
Ar+Ion energy Ei=600eV, ion beam current density Jb=0.6mA/cm2。
It follows that use aforementioned ar-ion beam 700 to bombard the multielement target 200 on target platform 300, by multielement target
The nickel that sputters out on 200, chromium, manganese, four kinds of element sputtering particles 600 of silicon are deposited on base material 500 surface, and grow into multielement
Alloy firm.
In a preferred embodiment of the invention, ar-ion beam 700 bombards multielement target 200 so that the multielement of formation
The thickness of alloy firm is 3～4nm, and resistance value is 200～700K Ω.In some currently preferred embodiments of the present invention, Ke Yigen
The time directly arranging ar-ion beam 700 bombardment according to experience is 6～11s.In other embodiments of the present invention, can be by surveying
The thickness of the multielement alloy firm of institute's sputtering sedimentation is measured by amount unit, and sends the film thickness recorded to comparing
Unit, compares with the predetermined thin film thickness stored, and when the film thickness deposited reaches predetermined thin film thickness, controls
Ion source 100 stops launching ar-ion beam 700.Measuring unit herein can be quartz-crystal resonator QCR able to programme, or
Any other the parts that film thickness is measured can be adapted for.
Such as, Ar is used+Multielement target 200 containing nickel, chromium, manganese and silicon is bombarded by ion beam 700, thus spatters
Penetrate and be deposited on base material 500 surface formation multielement alloy firm.Here, can be by Ar+Ion beam 700 sputters multielement target 200
Time control be first scheduled time, such as 6s.Quartz-crystal resonator QCR the most able to programme is polynary to institute's formation of deposits
Element alloy thin film carries out sampling and measuring its film thickness, sends the film thickness recorded to comparing unit subsequently, such as, and meter
Calculation machine control system.Computer control system is by the film thickness recorded received and the first predetermined thin film thickness stored
Compare.If not yet reaching the first predetermined thin film thickness (such as 3nm), then continuing executing with ion beam sputter depositing thin film.
When the multielement alloy firm thickness recorded reaches the first predetermined thin film thickness, computer control system controls ion source 100
Stop launching ar-ion beam 700.
Finally, in step s 5, remove remaining photoresist, obtain multielement alloy firm resistance.Although this embodiment
In only give the step of plating multielement alloy firm on base material 500, but the present invention is not limited only to this, also can be according to need
Other film layer is set up in the either above or below of multielement alloy firm.
The present invention, when making multielement alloy firm resistance, adds certain proportion manganese and silicon in nickel chromium, and
Good temperature performance is obtained so that it is temperature-coefficient of electrical resistance (TCR) by the mass ratio between four kinds of elements of regulation) it is not more than
± 0.001%FS/ DEG C, superhigh temperature, ultralow temperature media environment and medium temperature change occasion greatly can be well adapted for.More excellent
Selection of land, when using the multielement target of following ratio, temperature-coefficient of electrical resistance is not more than ± 0.0008%FS/ DEG C: nickel, 80～85 parts；
Chromium, 15～25 parts；Manganese, 4～6 parts；Silicon, 4～6 parts.
Shown in the following form of instantiation 1 of multielement target, with the content of each element with mass fraction in this form 1
Represent:
Form 1
| Nickel | Chromium | Manganese | Silicon | |
| Example 1 | 70 parts | 10 parts | 10 parts | 10 parts |
| Example 2 | 80 parts | 30 parts | 1 part | 1 part |
| Example 3 | 90 parts | 20 parts | 5 parts | 10 parts |
| Example 4 | 70 parts | 15 parts | 8 parts | 5 parts |
| Example 5 | 75 parts | 25 parts | 7 parts | 7 parts |
| Example 6 | 85 parts | 18 parts | 6 parts | 4 parts |
| Example 7 | 88 parts | 22 parts | 4 parts | 6 parts |
| Example 8 | 76 parts | 17 parts | 3 parts | 3 parts |
| Example 9 | 82 parts | 28 parts | 2 parts | 1 part |
| Example 10 | 84 parts | 20 parts | 1 part | 8 parts |
The present invention further correspondingly provides a kind of multielement alloy firm resistance, by aforementioned multielement alloy firm resistance
Preparation method prepares.
In sum, on the one hand, the present invention uses ion beam sputter depositing thin film fabrication system, its running parameter is independently controlled
Degree of freedom processed is big, can effective monitoring thin film growth process, little crystallite dimension and fabricating low-defect-density thin film can be prepared, improve thin film
Consistency and reduction voidage, change character and the size of membrane stress.
On the other hand, the present invention configures nickel, chromium, manganese, the spattering of four kinds of elements of silicon in proportion according to film resistor parameter request
Shoot at the target material, prepared film resistor resistance is brought up to 200～700K Ω, continue through 150 DEG C to have after annealing for 24 hours
High temperature and low temperature two-way stable, make temperature-coefficient of electrical resistance be down to close to zero simultaneously.
Additionally, existing ion beam sputter depositing alloy firm generally uses multiple ion source, each ion source correspondence one
The technique planting element, if increasing trace element, sputtering depositing system can be excessively complicated, the ratio of every kind of element in the course of processing
Cannot accurately control, thus affect yield rate and the cost of the processing of multielement alloy firm.Each element is first mixed by the present invention
Make multielement target, then make multielement alloy firm resistance, with existing by the sputtering sedimentation of isolated component and single target platform
Technology is compared, and reduces the production cost of multielement alloy firm, improves finished product rate.
In the above description, prepared by photoresist, sputtering sedimentation, film thickness compare and the ins and outs such as control also
It is not described in detail.It should be appreciated to those skilled in the art that can be formed required by various technological means
The layer of shape, region etc..It addition, in order to form same structure, those skilled in the art can be devised by with described above
The most identical method of method.Although it addition, respectively describing each embodiment above, but it is not intended that each
Measure in embodiment can not be advantageously combined use.
Last it is noted that above example is only in order to illustrate technical scheme, it is not intended to limit；Although
With reference to previous embodiment, the present invention is described in detail, it will be understood by those within the art that: it still may be used
So that the technical scheme described in foregoing embodiments to be modified, or wherein portion of techniques feature is carried out equivalent；
And these amendment or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. the preparation method of a multielement alloy firm resistance, it is characterised in that described preparation method comprises the following steps:
S1: preparation is containing nickel, chromium, manganese and the multielement target of silicon, and is fixed on target platform；
S2: the base material preparing photoresist is fixed on rotational workpieces platform；
S3: first use the thick evacuation of mechanical pump, re-use molecular pump essence evacuation, make the vacuum in vacuum storehouse be not more than 5 × 10- 4Pa；
S4: be 2.0 × 10 by operating pressure-2The argon of Pa is filled with ion source, produces plasma through glow discharge, through drawing,
Bunchy, the multielement target accelerating, neutralizing on formation ar-ion beam bombardment target platform, by sputter out on described multielement target
Nickel, chromium, manganese, four kinds of elementary particles of silicon are deposited on substrate surface, and grow into multielement alloy firm；
S5: remove remaining photoresist, obtains multielement alloy firm resistance.
The preparation method of multielement alloy firm resistance the most according to claim 1, it is characterised in that described multielement target
In material, the mass fraction of each element is: nickel, 70～90 parts；Chromium, 10～30 parts；Manganese, 1～10 part；Silicon, 1～10 part.
The preparation method of multielement alloy firm resistance the most according to claim 2, it is characterised in that described multielement target
In material, the mass fraction of each element is: nickel, 80～85 parts；Chromium, 15～25 parts；Manganese, 4～6 parts；Silicon, 4～6 parts.
4. according to the preparation method of the multielement alloy firm resistance according to any one of claims 1 to 3, it is characterised in that
In described step S1, after nickel, chromium, manganese and four kinds of powder mixing of silicon, it is pressed into embryo block at normal temperatures, then through 1200 DEG C of high temperature hot pressings
Become described multielement target.
5. according to the preparation method of the multielement alloy firm resistance according to any one of claims 1 to 3, it is characterised in that
In described step S2, arranging rotational workpieces platform rotational velocity is 7～9rpm, and angle of deposit is 45 °.
6. according to the preparation method of the multielement alloy firm resistance according to any one of claims 1 to 3, it is characterised in that
In described step S4, the ion energy E of ion beam sputter depositing is seti=600eV, ion beam current density Jb=0.6mA/cm2,
And the thickness controlling the multielement alloy firm of formation is 3～4nm, resistance value is 200～700K Ω.
The preparation method of multielement alloy firm resistance the most according to claim 6, it is characterised in that described step S4
In, the time of the ar-ion beam described multielement target of bombardment is 6～11s.
The preparation method of multielement alloy firm resistance the most according to claim 6, it is characterised in that described step S4
In, measuring unit the thickness of the multielement alloy firm of institute's sputtering sedimentation is measured, and the film thickness recorded is sent out
Deliver to comparing unit, compare with the predetermined thin film thickness stored, when the film thickness deposited reaches predetermined thin film thickness
When spending, control described ion source and stop launching ar-ion beam.
9. a multielement alloy firm resistance, it is characterised in that use in claim 1～8 described in any one is polynary
The preparation method of element alloy film resistor prepares.
10. a multielement target, it is characterised in that described multielement target is by nickel, chromium, manganese and four kinds of powder of silicon at normal temperatures
It is pressed into briquet after mixing, then is pressed into described multielement target through 1200 DEG C of high-temperature hot；Each element in described multielement target
Mass fraction is: nickel, 70～90 parts；Chromium, 10～30 parts；Manganese, 1～10 part；Silicon, 1～10 part.
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| CN115323337A (en) * | 2022-10-11 | 2022-11-11 | 松诺盟科技有限公司 | Nano-film composite strain sensor and preparation method and application thereof |
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