CN106282915B - A kind of preparation method of AlN film - Google Patents

A kind of preparation method of AlN film Download PDF

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CN106282915B
CN106282915B CN201610841499.8A CN201610841499A CN106282915B CN 106282915 B CN106282915 B CN 106282915B CN 201610841499 A CN201610841499 A CN 201610841499A CN 106282915 B CN106282915 B CN 106282915B
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aln
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CN106282915A (en
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王文庆
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Yuncheng, Kunshan Su Ye Co., Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to the preparation field of wide bandgap semiconductor, in particular to a kind of preparation method of the AlN film of (100) preferred orientation, comprising the following steps: (1) substrate pre-treatment；(2) target pre-processes；(3) ion beam assisted deposition, Ar are used+Ion beam sputter depositing Al film, N+Ion beam bombardment Al film, is formed on the substrate AlN buffer layer；(4)N2, Ar and NH3Under mixed gas, using magnetron sputtered deposition technology, AlN film is formed on AlN buffer layer.The growth of (100) preferred orientation of film made from this method, and film quality is excellent.

Description

A kind of preparation method of AlN film
Technical field
The present invention relates to the preparation field of wide bandgap semiconductor, in particular to a kind of AlN film of (100) preferred orientation Preparation method.
Background technique
AlN thin-film material has many very excellent as a kind of important broad stopband direct band-gap semicondictor material Physical and chemical performance, such as: it is excellent table acoustic wave velocity, low thermal coefficient of expansion, high chemical stability, high resistivity, highly thermally conductive Rate, high rigidity, high-melting-point, broad stopband, big disruptive field intensity, low-dielectric loss etc..
The AlN film of different preferred orientations has different property, and for polymorph A lN film, film was being grown (002) preferred orientation easy to form in journey, preparation are easier to.The film of multipair (002) preferred orientation of the prior art is visited Rope, and it is less to the AlN thin film study of (100) preferred orientation, and the present invention provides a kind of AlN film of (100) preferred orientation Preparation method provides condition to widen the application of AlN film.
Summary of the invention
The object of the present invention is to provide a kind of preparation methods of AlN film, so that film made from this method (100) is preferentially Oriented growth, and film quality is excellent.
To achieve the above object, the present invention uses following technological means:
A kind of preparation method of AlN film, comprising the following steps:
(1) substrate pre-treatment；
(2) target pre-processes；
(3) ion beam assisted deposition, Ar are used+Ion beam sputter depositing Al film, N+Ion beam bombardment Al film, is serving as a contrast AlN buffer layer is formed on bottom；
(4)N2, Ar and NH3Under mixed gas, using magnetron sputtered deposition technology, it is thin that AlN is formed on AlN buffer layer Film.
Preferably, substrate pre-treatment includes that wet-cleaning and dry etching clean.
Optionally, dry etching cleaning is served as a contrast for ion source is arranged in magnetic control sputtering system by ion source Bombardment and cleaning Bottom.
More preferably, using N+Ion beam and Ar+Ion beam jointly cleans substrate dry etching.
Preferably, target pretreatment includes logical Ar target pre-sputtering and logical N2Target pre-sputtering.
Preferably, ion beam assisted depositing device is set in magnetic control sputtering system, ion is carried out in magnetic control sputtering system Beam assistant depositing.
Preferably, NH when magnetron sputtering depositing Al N thin film3Content accounts for 2%~5%.
Preferably, magnetron sputtering depositing Al N thin film carries out by several times, NH3Content successively gradually increases.
Preferably, magnetron sputtering shielding power supply uses the pulse power.
Preferably, Ar and N when magnetron sputtering2The ratio between volume is 1:1.
Compared with prior art, the invention has the following advantages that the present invention introduces NH when sputtering3,NH3Under high voltage electric field The cation and electronics of N and H are ionized out, the cation of N goes down to assist bombardment target in electric field action, and the cation of H induces AlN In (100) crystal face preferential growth, it is prepared for the AlN film of (100) preferred orientation；And the life of ion beam assisted depositing buffer layer Long, while so that forming Al-N key, REINFORCED Al, N are mixed with substrate surface atom, keep film strong with substrate adhesion；And AlN film homogenous growth after the presence of buffer layer enables, film crystalline quality is good, lattice defect is few.
Specific embodiment
In order to better understand the present invention, below by embodiment, the present invention is further described, and embodiment is served only for solving The present invention is released, any restriction will not be constituted to the present invention.
Magnetic control sputtering system used in the embodiment of the present invention is composite film coating system, including ion source cleaning system, ion beam Assisted deposition system and magnetron sputtering coating system.Substrate is further cleaned by ion source cleaning system；Pass through ion Beam assisted deposition system forms AlN buffer layer；Pass through magnetron sputtering coating system growing AIN film.
The present invention characterizes the structure of AlN film using Neo-Confucianism D/MAX-2200 type X-ray diffractometer (XRD)；With middle section The CSPM-3100 type atomic force microscope (AFM) of basis nanometer instrument company, chemistry institute, institute production observes the shape of film surface Looks, granular size and surface roughness；Film adhesion is characterized by cold cycling method, and 5 points are kept in 0 ° of mixture of ice and water Clock is put into 100 ° of boiling water immediately after and is kept for 5 minutes, several periods of such cold cycling.
Comparative example
A kind of preparation method of AlN film, comprising the following steps:
(1) substrate pre-treatment；
Substrate pre-treatment includes that substrate pre-treatment includes wet-cleaning and ion source Bombardment and cleaning.
The single crystalline Si (100) of substrate selection finishing polish；
Wet-cleaning: the single crystalline Si (100) of polishing is immersed in acetone soln and carries out ultrasonication 15 minutes by essence, then It is boiled 5 minutes in mixed liquor 1 (deionized water: hydrogen peroxide: fluorine water=5:2:l), then with the (deionized water: peroxide of mixed liquor 2 Change hydrogen: hydrochloric acid=7:2:1) it boils 5 minutes, it finally carries out ultrasonication 20 minutes in deionized water, to remove silicon wafer table Face organic matter that may be present, is put into after taking-up and is filled with pure N2Drying box in be heated to 100 DEG C dry 1 hour.
Ion source Bombardment and cleaning: the single crystalline Si cleaned (100) substrate is placed in the ion of magnetron sputtering composite system On the cleaning system sample stage of source, cavity is closed；Ar+Ion beam cleans 15min to substrate dry etching.
(2) target pre-processes；
Al target is mounted in magnetron sputtering composite system, magnetron sputtering apparatus is normally started, 1 is evacuated to cavity × 10-5Pa, deposition is preceding first to block baffle, Ar gas is filled with, by Al target elder generation pre-sputtering 15min, to remove the Al of target surface2O3Layer.
(3)N2, under Ar mixed gas, using pulse reaction magnetron sputtered deposition technology, form AlN film.Technological parameter Setting: target-substrate distance 4.5cm, sputtering pressure 0.5Pa, Ar and N2Content respectively accounts for 50%, sputtering power 150W, underlayer temperature It is 75 DEG C, pulse frequency 30kHz, duty ratio 50%, sedimentation time 60min.
XRD illustrates that film exists the results show that the present embodiment AlN film only nearby goes out AlN (002) crystallographic plane diffraction peak at 36 ° (002) face preferential growth；AFM 3-D view shows that film surface is coarse, and r.m.s. roughness (RMS) is 4.7nm；Adhesion By being started shedding off after 10 period of cold cycling.
Embodiment 1
A kind of preparation method of AlN film, comprising the following steps:
(1) substrate pre-treatment；
Substrate pre-treatment includes that substrate pre-treatment includes wet-cleaning and ion source Bombardment and cleaning.
The single crystalline Si (100) of substrate selection finishing polish；
Wet-cleaning: the single crystalline Si (100) of polishing is immersed in acetone soln and carries out ultrasonication 15 minutes by essence, then It is boiled 5 minutes in mixed liquor 1 (deionized water: hydrogen peroxide: fluorine water=5:2:l), then with the (deionized water: peroxide of mixed liquor 2 Change hydrogen: hydrochloric acid=7:2:1) it boils 5 minutes, it finally carries out ultrasonication 20 minutes in deionized water, to remove silicon wafer table Face organic matter that may be present, is put into after taking-up and is filled with pure N2Drying box in be heated to 100 DEG C dry 1 hour.
Ion source Bombardment and cleaning: the single crystalline Si cleaned (100) substrate is placed in the ion of magnetron sputtering composite system On the cleaning system sample stage of source, cavity is closed；Ar+Ion beam cleans 15min to substrate dry etching.
(2) target pre-processes；
Al target is mounted in magnetron sputtering composite system, magnetron sputtering apparatus is normally started, 1 is evacuated to cavity × 10-5Pa, deposition is preceding first to block baffle, Ar gas is filled with, by Al target elder generation pre-sputtering 15min, to remove the Al of target surface2O3Layer.
(3) ion beam assisted deposition is used, with the Ar of 2500V/50mA+Ion beam sputter depositing Al film, 2500V/ The N of 10mA+AlN buffer layer is formed on the substrate in ion beam bombardment Al film, assistant depositing 30min；
(4) specimen rotating holder rotates it to magnetron sputtering film location, N from ion beam assisted depositing plating film location2、 Ar and NH3Under mixed gas, using pulse reaction magnetron sputtered deposition technology, AlN film is formed on AlN buffer layer.Work Skill parameter setting: target-substrate distance 4.5cm, sputtering pressure 0.5Pa, NH3Content accounts for 4%, Ar and N2Content respectively accounts for 48%, sputtering Power is 150W, and underlayer temperature is 75 DEG C, pulse frequency 30kHz, duty ratio 50%, sedimentation time 60min.
XRD illustrates that film exists the results show that the present embodiment AlN film only nearby goes out AlN (100) crystallographic plane diffraction peak at 33 ° (100) face preferential growth；AFM 3-D view shows that film surface is smooth, uniformity, r.m.s. roughness (RMS) For 3.7nm；Adhesion after 13 period of cold cycling by starting shedding off.
Embodiment 2
A kind of preparation method of AlN film, comprising the following steps:
(1) substrate pre-treatment；
Substrate pre-treatment includes that substrate pre-treatment includes wet-cleaning and ion source Bombardment and cleaning.
The single crystalline Si (100) of substrate selection finishing polish；
Wet-cleaning: the single crystalline Si (100) of polishing is immersed in acetone soln and carries out ultrasonication 15 minutes by essence, then It is boiled 5 minutes in mixed liquor 1 (deionized water: hydrogen peroxide: fluorine water=5:2:l), then with the (deionized water: peroxide of mixed liquor 2 Change hydrogen: hydrochloric acid=7:2:1) it boils 5 minutes, it finally carries out ultrasonication 20 minutes in deionized water, to remove silicon wafer table Face organic matter that may be present, is put into after taking-up and is filled with pure N2Drying box in be heated to 100 DEG C dry 1 hour.
Ion source Bombardment and cleaning: the single crystalline Si cleaned (100) substrate is placed in the ion of magnetron sputtering composite system On the cleaning system sample stage of source, cavity is closed；N+Ion beam and Ar+Ion beam cleans 15min to substrate dry etching jointly.
(2) target pre-processes；
Al target is mounted in magnetron sputtering composite system, magnetron sputtering apparatus is normally started, 1 is evacuated to cavity × 10-5Pa, deposition is preceding first to block baffle, Ar gas is filled with, by Al target elder generation pre-sputtering 15min, to remove the Al of target surface2O3Layer, Ar gas is turned off, N is passed through2Gas, pre-sputtering 10min.
(3) ion beam assisted deposition is used, with the Ar of 2500V/50mA+Ion beam sputter depositing Al film, 2500V/ The N of 10mA+AlN buffer layer is formed on the substrate in ion beam bombardment Al film, assistant depositing 30min；
(4) specimen rotating holder rotates it to magnetron sputtering film location, N from ion beam assisted depositing plating film location2、 Ar and NH3Under mixed gas, using pulse reaction magnetron sputtered deposition technology, AlN film is formed on AlN buffer layer.Work Skill parameter setting: target-substrate distance 4.5cm, sputtering pressure 0.5Pa, NH3Content accounts for 4%, Ar and N2Content respectively accounts for 48%, sputtering Power is 150W, and underlayer temperature is 75 DEG C, pulse frequency 30kHz, duty ratio 50%, sedimentation time 60min.
XRD illustrates that film exists the results show that the present embodiment AlN film only nearby goes out AlN (100) crystallographic plane diffraction peak at 33 ° (100) face preferential growth；AFM 3-D view shows that film surface is smooth, uniformity, r.m.s. roughness (RMS) For 3.5nm；Adhesion after 14 period of cold cycling by starting shedding off.
Embodiment 3
A kind of preparation method of AlN film, comprising the following steps:
(1) substrate pre-treatment；
Substrate pre-treatment includes that substrate pre-treatment includes wet-cleaning and ion source Bombardment and cleaning.
The single crystalline Si (100) of substrate selection finishing polish；
Wet-cleaning: the single crystalline Si (100) of polishing is immersed in acetone soln and carries out ultrasonication 15 minutes by essence, then It is boiled 5 minutes in mixed liquor 1 (deionized water: hydrogen peroxide: fluorine water=5:2:l), then with the (deionized water: peroxide of mixed liquor 2 Change hydrogen: hydrochloric acid=7:2:1) it boils 5 minutes, it finally carries out ultrasonication 20 minutes in deionized water, to remove silicon wafer table Face organic matter that may be present, is put into after taking-up and is filled with pure N2Drying box in be heated to 100 DEG C dry 1 hour.
Ion source Bombardment and cleaning: the single crystalline Si cleaned (100) substrate is placed in the ion of magnetron sputtering composite system On the cleaning system sample stage of source, cavity is closed；N+Ion beam and Ar+Ion beam cleans 15min to substrate dry etching jointly.
(2) target pre-processes；
Al target is mounted in magnetron sputtering composite system, magnetron sputtering apparatus is normally started, 1 is evacuated to cavity × 10-5Pa, deposition is preceding first to block baffle, Ar gas is filled with, by Al target elder generation pre-sputtering 15min, to remove the Al of target surface2O3Layer, Ar gas is turned off, N is passed through2Gas, pre-sputtering 10min.
(3) ion beam assisted deposition is used, with the Ar of 2500V/50mA+Ion beam sputter depositing Al film, 2500V/ The N of 10mA+AlN buffer layer is formed on the substrate in ion beam bombardment Al film, assistant depositing 30min；
(4) specimen rotating holder rotates it to magnetron sputtering film location, N from ion beam assisted depositing plating film location2、 Ar and NH3Under mixed gas, using pulse reaction magnetron sputtered deposition technology, AlN film is formed on AlN buffer layer.Work Skill parameter setting: target-substrate distance 4.5cm, sputtering pressure 0.5Pa, NH3Content accounts for 5%, Ar and N2Content respectively accounts for 47.5%, splashes Penetrating power is 150W, and underlayer temperature is 75 DEG C, pulse frequency 30kHz, duty ratio 50%, sedimentation time 60min.
XRD illustrates that film exists the results show that the present embodiment AlN film only nearby goes out AlN (100) crystallographic plane diffraction peak at 33 ° (100) face preferential growth；AFM 3-D view shows that film surface is smooth, uniformity, r.m.s. roughness (RMS) For 3.3nm；Adhesion after 15 period of cold cycling by starting shedding off.
Embodiment 4
A kind of preparation method of AlN film, comprising the following steps:
(1) substrate pre-treatment；
Substrate pre-treatment includes that substrate pre-treatment includes wet-cleaning and ion source Bombardment and cleaning.
The single crystalline Si (100) of substrate selection finishing polish；
Wet-cleaning: the single crystalline Si (100) of polishing is immersed in acetone soln and carries out ultrasonication 15 minutes by essence, then It is boiled 5 minutes in mixed liquor 1 (deionized water: hydrogen peroxide: fluorine water=5:2:l), then with the (deionized water: peroxide of mixed liquor 2 Change hydrogen: hydrochloric acid=7:2:1) it boils 5 minutes, it finally carries out ultrasonication 20 minutes in deionized water, to remove silicon wafer table Face organic matter that may be present, is put into after taking-up and is filled with pure N2Drying box in be heated to 100 DEG C dry 1 hour.
Ion source Bombardment and cleaning: the single crystalline Si cleaned (100) substrate is placed in the ion of magnetron sputtering composite system On the cleaning system sample stage of source, cavity is closed；N+Ion beam and Ar+Ion beam cleans 15min to substrate dry etching jointly.
(2) target pre-processes；
Al target is mounted in magnetron sputtering composite system, magnetron sputtering apparatus is normally started, 1 is evacuated to cavity × 10-5Pa, deposition is preceding first to block baffle, Ar gas is filled with, by Al target elder generation pre-sputtering 15min, to remove the Al of target surface2O3Layer, Ar gas is turned off, N is passed through2Gas, pre-sputtering 10min.
(3) ion beam assisted deposition is used, with the Ar of 2500V/50mA+Ion beam sputter depositing Al film, 2500V/ The N of 10mA+AlN buffer layer is formed on the substrate in ion beam bombardment Al film, assistant depositing 30min；
(4) specimen rotating holder rotates it to magnetron sputtering film location, N from ion beam assisted depositing plating film location2、 Ar and NH3Under mixed gas, using pulse reaction magnetron sputtered deposition technology, AlN film is formed on AlN buffer layer.Work Skill parameter setting: target-substrate distance 4.5cm, sputtering pressure 0.5Pa, NH3Content accounts for 6%, Ar and N2Content respectively accounts for 47%, sputtering Power is 150W, and underlayer temperature is 75 DEG C, pulse frequency 30kHz, duty ratio 50%, sedimentation time 60min.
XRD illustrates that film exists the results show that the present embodiment AlN film only nearby goes out AlN (100) crystallographic plane diffraction peak at 33 ° (100) face preferential growth；AFM 3-D view shows that film surface is smooth, uniformity, r.m.s. roughness (RMS) For 3.3nm；Adhesion after 14 period of cold cycling by starting shedding off.
Embodiment 5
A kind of preparation method of AlN film, comprising the following steps:
(1) substrate pre-treatment；
Substrate pre-treatment includes that substrate pre-treatment includes wet-cleaning and ion source Bombardment and cleaning.
The single crystalline Si (100) of substrate selection finishing polish；
Wet-cleaning: the single crystalline Si (100) of polishing is immersed in acetone soln and carries out ultrasonication 15 minutes by essence, then It is boiled 5 minutes in mixed liquor 1 (deionized water: hydrogen peroxide: fluorine water=5:2:l), then with the (deionized water: peroxide of mixed liquor 2 Change hydrogen: hydrochloric acid=7:2:1) it boils 5 minutes, it finally carries out ultrasonication 20 minutes in deionized water, to remove silicon wafer table Face organic matter that may be present, is put into after taking-up and is filled with pure N2Drying box in be heated to 100 DEG C dry 1 hour.
Ion source Bombardment and cleaning: the single crystalline Si cleaned (100) substrate is placed in the ion of magnetron sputtering composite system On the cleaning system sample stage of source, cavity is closed；N+Ion beam and Ar+Ion beam cleans 15min to substrate dry etching jointly.
(2) target pre-processes；
Al target is mounted in magnetron sputtering composite system, magnetron sputtering apparatus is normally started, 1 is evacuated to cavity × 10-5Pa, deposition is preceding first to block baffle, Ar gas is filled with, by Al target elder generation pre-sputtering 15min, to remove the Al of target surface2O3Layer, Ar gas is turned off, N is passed through2Gas, pre-sputtering 10min.
(3) ion beam assisted deposition is used, with the Ar of 2500V/50mA+Ion beam sputter depositing Al film, 2500V/ The N of 10mA+AlN buffer layer is formed on the substrate in ion beam bombardment Al film, assistant depositing 30min；
(4) specimen rotating holder rotates it to magnetron sputtering film location, N from ion beam assisted depositing plating film location2、 Ar and NH3Under mixed gas, using pulse reaction magnetron sputtered deposition technology, AlN film is formed on AlN buffer layer.Work Skill parameter setting: target-substrate distance 4.5cm, sputtering pressure 0.5Pa, sputtering power 150W, underlayer temperature are 75 DEG C, pulse frequency Rate 30kHz, duty ratio 50%.First time NH3Content accounts for 3%, Ar and N2Content respectively accounts for 48.5%, sedimentation time 10min； Other conditions are constant, adjust NH3Content accounts for 4%, Ar and N2Content respectively accounts for 48%, and second of sedimentation time is 10min；Other Part is constant, adjusts NH3Content accounts for 5%, Ar and N2Content respectively accounts for 47.5%, and third time sedimentation time is 40min.
XRD illustrates that film exists the results show that the present embodiment AlN film only nearby goes out AlN (100) crystallographic plane diffraction peak at 33 ° (100) face preferential growth；AFM 3-D view shows that film surface is smooth, uniformity, r.m.s. roughness (RMS) For 3.1nm；Adhesion after 15 period of cold cycling by starting shedding off.

Claims (7)

1. a kind of preparation method of AlN film, which comprises the following steps:
(1) substrate pre-treatment；
(2) target pre-processes；
(3) ion beam assisted deposition, Ar are used+Ion beam sputter depositing Al film, N+Ion beam bombardment Al film, on substrate Form AlN buffer layer；
(4)N2, Ar and NH3Under mixed gas, using magnetron sputtered deposition technology, AlN film is formed on AlN buffer layer；Its In, NH when magnetron sputtering depositing Al N thin film3Content accounts for 2%~5%, and magnetron sputtering depositing Al N thin film carries out by several times, NH3Content Successively gradually increase；Ar and N when magnetron sputtering2The ratio between volume is 1:1.
2. the preparation method of AlN film according to claim 1, it is characterised in that: substrate pre-treatment include wet-cleaning with Dry etching cleaning.
3. the preparation method of AlN film according to claim 2, it is characterised in that: dry etching cleaning is in magnetron sputtering Ion source is set in system, passes through ion source Bombardment and cleaning substrate.
4. the preparation method of AlN film according to claim 3, it is characterised in that: use N+Ion beam and Ar+Ion beam is total It is cleaned with to substrate dry etching.
5. the preparation method of AlN film according to claim 1, it is characterised in that: target pretreatment includes that logical Ar target is pre- Sputtering and logical N2Target pre-sputtering.
6. the preparation method of AlN film according to claim 1, it is characterised in that: ion beam is arranged in magnetic control sputtering system Assistant depositing device carries out ion beam assisted depositing in magnetic control sputtering system.
7. the preparation method of AlN film according to claim 1, it is characterised in that: magnetron sputtering shielding power supply uses pulse Power supply.
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CN114231933A (en) * 2021-12-23 2022-03-25 江苏籽硕科技有限公司 Method for preparing film by ion beam sputtering deposition

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CN101824592A (en) * 2010-05-26 2010-09-08 湖南大学 Deposition method capable of enhancing preferred orientation growth of AlN film

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Title
氨化时间和膜厚对Si（Ⅲ）上AlN薄膜生长取向的影响;胡丽君等;《山东师范大学学报（自然科学版）》;20070930;第22卷(第3期);第52页摘要和第53页图2

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