CN106276863B - A kind of method for shifting graphene - Google Patents
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Abstract
The invention discloses a kind of method for shifting graphene, belong to materials science field.It is a kind of shift graphene method be：（1）Using the metal of higher melt as metallic substrates, it is pre-processed；（2）It will be placed on the metallic substrate compared with the metal or alloy of low melting point, heating, must be stained with the metallic substrates compared with low-melting-point metal or alloy；（3）Graphene is grown, the metallic substrates for having graphene up to growth；（4）The metallic substrates that growth has graphene are placed on warm table, is heated at a temperature of higher than the fusing point of low-melting-point metal or alloy, target substrate is put on graphene to be transferred, graphene is slid onto in target substrate.Its advantage is：This method is suitable in any substrate such as silicon chip, quartz, hafnium oxide, beryllium oxide, plastic foil.Faster, the graphene for turning later is cleaner for this method transfer velocity；Condition is simple；Metallic substrates repeat utilization, especially suitable for industrialized production.
Description
Technical field
The present invention relates to materials science field, more particularly to a kind of method for shifting graphene.
Background technology
2004, Univ Manchester UK physicist An Deliehaimu and Constantine Nuo Woxiao loves were being tested
In successfully obtain graphene since, graphene just causes the extensive concern of scientific circles because of its excellent properties, becomes the world today
The popular domain of research.It is to use mechanical stripping method that people are successfully separated out graphene first, this method is usually required glue
Band adheres to graphite surface, recycles external force to peel off the graphene sheet layer being attached on adhesive tape；Or with another material in graphite
Mantle friction makes graphite flake layer be slid from block graphite.This method for obtaining graphene is easy to be relatively low with cost with process
The advantages of, make the common method for preparing graphene.But mechanical stripping method obtain graphene size is small, the number of plies can not
Control, and the stripping medium for being difficult to remove is usually contained in product, the graphene for causing to obtain can not meet the requirement of many applications.
To obtain the graphene for meeting application demand, current most common preparation method is chemical vapour deposition technique.It is this
The graphene area that method obtains is larger, and the number of plies is controllable, but graphene made from chemical vapour deposition technique is more on the metallic substrate,
In order to realize the application of graphene, generally require to transfer graphene in other target substrates（Such as dielectric base）.It is common
Transfer method is spin coating PMMA and to make its curing on the graphene to be shifted, and then etches away metallic substrates, uses deionized water
Rinsing, is finally transferred in target substrate, then removes PMMA film with acetone.Remained in after transfer PMMA on graphene and its
His pollutant can influence performance and the application of graphene, and take longer, the not reproducible use of growth substrate.It is currently used
Transfer method also has Bubbling method, but the graphene of Bubbling method transfer also has the residual of polymer.How quickly, lack of polymeric residue
It is to realize the widely applied a major challenge of graphene that ground, which is transferred graphene in any substrate,.
The content of the invention
Based on the above problem, the present invention provides a kind of method for shifting graphene.This method can quickly realize graphene
Transfer, and obtain graphene lack of polymeric residue, suitable for the target substrate of any material.
The purpose of the present invention is achieved through the following technical solutions：
A kind of method for shifting graphene, comprises the following steps：
（1）Using the metal of higher melt as metallic substrates, it is pre-processed；
（2）It will be placed on compared with the metal or alloy of low melting point through step（1）In pretreated metallic substrates, with higher than compared with
The temperature heating of the fusing point of the metal or alloy of low melting point, must be stained with the metallic substrates compared with low-melting-point metal or alloy；
（3）In step（2）What is prepared is stained with compared with graphene is grown in the metallic substrates of low-melting-point metal or alloy, to obtain the final product
Growth has the metallic substrates of graphene；
（4）By step（3）The metallic substrates that the growth of preparation has graphene are placed on warm table, higher than low melting point gold
Heated at a temperature of the fusing point of category or alloy, target substrate is put on graphene to be transferred, graphene is slid onto into target
In substrate.
The above method, which is further included, rinses the graphene after transfer with hydrochloric acid solution.
The step（1）In higher melt metal for cobalt, iron, aluminium, gold, silver, copper, zinc, molybdenum, tungsten, titanium, vanadium, chromium,
One or more in ruthenium, rhodium, platinum, palladium, iridium；
The pretreatment is：It is 1 × 1 cm by size2Metallic substrates be sequentially placed into acetone, ethanol, ultra-pure water and carry out
It is ultrasonically treated, the ultrasonic time is 20 min.
The metal of the higher melt is tungsten or molybdenum.
The step（2）In low-melting-point metal be gallium, indium or tin, the alloy is gallium, two or three in indium, tin
The alloy of composition；Its addition is 10 ~ 30 mg.
The step（3）The method of middle growth graphene is chemical vapour deposition technique.
The step（3）The condition of chemical vapour deposition technique is：Atmosphere：Hydrogen and inert gas, the hydrogen
Flow velocity is 10 ~ 300 sccm, and the flow velocity of inert gas is 20 ~ 1000 sccm；Heating-up temperature is 500 ~ 1200 °C, the heating-up time
For 20 ~ 50 min；Growth time is 10 ~ 120 min；The volume ratio of carbon-source gas and hydrogen is 3: 800~1 :2, carbon source is
Carbon monoxide, methane, ethane, propane, butane, pentane, hexane, hexamethylene, ethene, propylene, butadiene, amylene, cyclopentadiene,
One or more in acetylene, methanol, ethanol, benzene, toluene, phthalocyanine.
The inert gas is one or both of nitrogen, argon gas, and the flow velocity of the hydrogen is 20 ~ 40 sccm, lazy
The flow velocity of property gas is 250 ~ 350 sccm；Heating-up temperature is 800 ~ 1100, and the heating-up time is 30 ~ 35 min；Growth time is
The volume ratio of 30 ~ 70 min, carbon-source gas and hydrogen is 1: 3~1 :2, carbon source is methane, in ethanol, ethene, hexamethylene
It is one or more of.
The inert gas is argon gas, and the flow velocity of the inert gas is 300 sccm；The flow velocity of the hydrogen is 30
sccm；The volume ratio of the carbon-source gas and hydrogen is 1: 3；The carbon source is methane.
The step（4）In target substrate be silicon chip, quartz plate, plastic foil, mica sheet, hafnium oxide piece or beryllium oxide；
The sliding velocity is 0.1 ~ 100 mm/s.
The plastic foil is PET film；The sliding velocity is 1 ~ 10 mm/s.
A kind of method for shifting graphene provided by the invention, includes the following steps：
1）The pre-treatment of growth substrate：Shearing size is 1 × 1 cm2Metallic substrates, respectively in acetone, ethanol, ultrapure
Each ultrasonic 20 min in water.Form the metal base material be selected from cobalt, iron, aluminium, gold, silver, copper, zinc, molybdenum, tungsten, titanium, vanadium,
At least one of chromium, ruthenium, rhodium, platinum, palladium and iridium, preferably tungsten is as metallic substrates；The step 1）In carry out chemical gaseous phase
Pre-treatment is carried out to growth substrate before sedimentation growth graphene, wash away the impurity of metal substrate surface.
2）Weigh and be placed on step 1 compared with low-melting-point metal or its alloy in right amount）In the metallic substrates, with higher than relatively low
The heating of the temperature of melting point metals or its alloy can make compared with low-melting-point metal or alloys adhesion in step 1）In the metallic substrates.
It is 10 ~ 30 mg compared with the content of low-melting-point metal or its alloy, low-melting-point metal or alloy are selected from and gallium, indium, tin and various match somebody with somebody
The alloy of ratio.
3）Process for preparing graphenes by chemical vapour deposition.The step of chemical deposition is：In hydrogen and inert atmosphere, it will walk
Rapid 2）The growth substrate is being passed through carbon source catalytic growth graphene in growth substrate by room temperature to growth temperature.Stone
Closing carbon source cools to 700 °C and uncaps after black alkene has been grown, and graphene sample is collected after then cooling to less than 100 °C and is done down
One step shifts.When rising to growth temperature by room temperature, the time is 20 ~ 50 min, preferably 30 ~ 35 min；The flow velocity of the hydrogen is
10 ~ 300 sccm, preferably 20 ~ 40 sccm；The flow velocity of the inert gas is 20 ~ 1000 sccm, preferably 250 ~ 350
Sccm, more preferably 300sccm；The inert gas is selected from least one of nitrogen and argon gas, preferably argon gas.In the growth
Growth temperature is 500 ~ 1200 °C, preferably 800 ~ 1100 °C in step；Growth time is 10 ~ 120 min, preferably 30 ~ 70
min；The carbon source and the volume ratio of the hydrogen are 3: 800~1 :2, preferably 1: 3~1 :2, more preferably 1: 3.Institute
State carbon source and be selected from carbon monoxide, methane, ethane, propane, butane, pentane, hexane, hexamethylene, ethene, propylene, butadiene, penta
At least one of alkene, cyclopentadiene, acetylene, methanol, ethanol, benzene, toluene and phthalocyanine, optimization methane, ethanol, ethene and hexamethylene
At least one of alkane, most preferably methane.The hydrogen of temperature-fall period with inert gas as the temperature rise period, and gas flow
Equally.
4）The sliding transfer of graphene.By the step 3）The graphene of preparation takes out and is placed in thermal station, the temperature of thermal station
As long as degree is on the fusing point of low-melting-point metal or alloy, you can realizes the quick sliding transfer of graphene, by taking gallium as an example, thermal station
Temperature in 30 °C and the above be that the quick sliding transfer of graphene can be achieved.Target substrate is placed on to graphene to be transferred
On, using the weaker active force of the mobility and liquid metal interlayer of liquid metal, graphene is turned by sliding transfer method
Moving on in target substrate, sliding velocity is 0.1 ~ 100 mm/s, preferably 1 ~ 10 mm/s, and the length of side of selected growth substrate is 1 cm,
Therefore it may be implemented in transfer graphene in 10 s.The target substrate is silicon chip, quartz, plastic foil（Such as PET film）, mica, oxidation
Any substrate such as hafnium, beryllium oxide.Contain on the graphene peeled off on a small quantity compared with low-melting-point metal or alloy, hydrochloric acid solution can be passed through
Get express developed.
Metallic substrates of the present invention are intended only as a kind of support substrate, if it is non-fusible under growth temperature, and
Low-melting-point metal can be sprawled above.
Melting temperature compared with the metal or alloy of low melting point is typically below 200 DEG C, and this temperature is less than higher melt
Metal fusing point, and the fusing point as the higher melt metal of metallic substrates is all very high, can grow graphite at high temperature
Alkene, and metallic substrates will not melt.
Compared with prior art, have the advantages that and advantage：
1st, present invention utilizes the characteristic of low-melting-point metal and its alloy by process for preparing graphenes by chemical vapour deposition simultaneously
Realize the fast transfer of graphene, and the graphene lack of polymeric residue obtained.
2nd, the method for the present invention has universality, and graphene can be transferred to silicon chip, quartz, hafnium oxide, beryllium oxide, plastic foil etc.
In any substrate.
3rd, method disclosed by the invention, changes to innovative the transfer present situation of graphene.Compared to its of graphene transfer
His method, overcomes the uncontrollability of mechanical stripping method transfer graphene, faster cleaner than polymer auxiliary law, compares Bubbling method
It is cleaner.
4th, graphene transfer method provided by the invention, condition is simple, without harsh conditions such as low pressure, high vacuum.And turn
Growth substrate after moving past（Metallic substrates）It is repeatable to utilize, especially suitable for industrialized production.
Figure of description
Fig. 1 slides transfer process figure for graphene.
Fig. 2 is the photo figure being transferred to the graphene sliding of preparation in the silicon base with 300 nm thermal oxide layers.
Fig. 3 is the Raman spectrum being transferred to the graphene sliding of preparation in the silicon base with 300 nm thermal oxide layers
Figure.
Fig. 4 is the Raman image being transferred to the graphene sliding of preparation in the silicon base with 300 nm thermal oxide layers
Figure.
Fig. 5 is the atomic force microscopy being transferred to the graphene sliding of preparation in the silicon base with 300 nm thermal oxide layers
Mirror figure.
Fig. 6 is the Raman spectrogram being transferred to the graphene sliding of preparation in quartz substrate.
Fig. 7 is the Raman Surface scan figure being transferred to the graphene sliding of preparation in quartz substrate.
Embodiment
With reference to specific embodiment, the present invention is further elaborated, but the present invention is not limited to following embodiments.
Embodiment 1, quick sliding transfer graphene
1）Selection thickness is 1 × 1 cm for 50 μm, size2Leaf as growth substrate（Metallic substrates）, acetone,
Each ultrasound 20min in ethanol, ultra-pure water.
2）20 mg galliums are positioned in leaf under conditions of 40 °C of heating and it is adhered to above.
3）In hydrogen（Flow velocity is 30 sccm）And argon gas（Flow velocity is 300 sccm）In, by step 2 in tube furnace）Institute
Obtain growth substrate and be heated to 1020 °C of growth temperature through 35 min by room temperature, be passed through carbon source methane at this time（Flow velocity is 10
sccm）, growth time is 70 min, then Temperature fall, when temperature is down to 700 °C, Temperature fall of uncapping, when temperature is low
Hydrogen is closed when 200 °C, protective gas argon gas is closed when temperature is less than 100 °C, takes out sample, i.e., in step 2）Gained
Growth substrate surface obtains single-layer graphene provided by the invention.
4）By the step 3）The graphene of preparation takes out and is placed in thermal station, and the temperature of thermal station is at 40 °C.By target base
Bottom silicon chip is placed on graphene to be transferred, using the weaker active force of the mobility and liquid metal interlayer of liquid metal, is led to
Sliding transfer method is crossed to transfer graphene in the silicon base with 300 nm thermal oxide layers（The oxide layer is in order in light
Learn under microscope easy to observation）, sliding velocity is 1 mm/s, it can be achieved that about 10 s shift graphene.On the graphene shifted
Containing a small amount of gallium, can be got express developed by hydrochloric acid solution.
Graphene slides transfer process figure as shown in Figure 1, target substrate silicon chip is placed on graphene to be transferred（Figure
1a）, using the weaker active force of the mobility and liquid metal interlayer of liquid metal, graphene is turned by sliding transfer method
Move on in target substrate, its shift process as shown in Figure 1 b, after transfer as illustrated in figure 1 c.
Fig. 2-5 is respectively photo figure, the Raman that graphene sliding is transferred in the silicon base with 300 nm thermal oxide layers
Spectrogram, Raman image figure and atomic force microscopy diagram, it can be seen from the figure that the transfer method of the present invention is feasible, this
Kind transfer method is simple and quick, and can transition out the graphene of larger area.
Embodiment 2, quick sliding transfer graphene
1）Selection thickness is 1 × 1 cm for 50 μm, size2Leaf as growth substrate（Metallic substrates）, in acetone, second
Each ultrasound 20min in alcohol, ultra-pure water.
2）20mg galliums are positioned in leaf under conditions of 40 °C of heating and it is adhered to above.
3）In hydrogen（Flow velocity is 30 sccm）And argon gas（Flow velocity is 300 sccm）In, by step 2 in tube furnace）Institute
Obtain growth substrate and be heated to 1020 °C of growth temperature through 35 min by room temperature, be passed through carbon source methane at this time（Flow velocity is 10
sccm）, growth time is 70 min, then Temperature fall, when temperature is down to 700 °C, Temperature fall of uncapping, when temperature is low
Hydrogen is closed when 200 °C, protective gas argon gas is closed when temperature is less than 100 °C, takes out sample, i.e., in step 2）Gained
Growth substrate surface obtains single-layer graphene provided by the invention.
4）By the step 3）The graphene of preparation, which quickly removes, to be placed in thermal station, and the temperature of thermal station is at 40 °C.By mesh
Mark base ceramic is placed on graphene to be transferred, utilizes the weaker effect of the mobility and liquid metal interlayer of liquid metal
Power, is transferred graphene on target substrate quartz by sliding transfer method, and sliding velocity is 1 mm/s, it can be achieved that about 10 s
Shift graphene.Contain a small amount of gallium on the graphene shifted, can be got express developed by hydrochloric acid solution.
Fig. 6-7 is respectively that graphene sliding is transferred to the Raman spectrogram that is transferred in quartz substrate of sliding and Raman face is swept
Tracing, it can be seen from the figure that the transfer method of the present invention is feasible, this transfer method is simple and quick, and can turn
Remove the graphene of larger area.
Embodiment 3, quick sliding transfer graphene
1）Selection thickness is 1 × 1 cm for 50 μm, size2Molybdenum foil as growth substrate（Metallic substrates）, in acetone, second
Each ultrasound 20min in alcohol, ultra-pure water.
2）10mg galliums are positioned on molybdenum foil under conditions of 40 °C of heating and it is adhered to above.
3）In hydrogen（Flow velocity is 30 sccm）And argon gas（Flow velocity is 250sccm）In, by step 2 in tube furnace）Gained
Growth substrate is heated to 800 °C of growth temperature by room temperature through 35 min, is passed through carbon source methane at this time（Flow velocity is 10 sccm）, it is raw
Long-time is 30 min, then Temperature fall, when temperature is down to 700 °C, Temperature fall of uncapping, when temperature is less than 200 °C
When close hydrogen, when temperature be less than 100 °C when close protective gas argon gas, take out sample, i.e., in step 2）Gained growth substrate
Surface obtains single-layer graphene provided by the invention.
4）By the step 3）The graphene of preparation takes out and is placed in thermal station, and the temperature of thermal station is at 40 °C.By target base
Bottom hafnium oxide is placed on graphene to be transferred, using the weaker active force of the mobility and liquid metal interlayer of liquid metal,
Transferred graphene to by sliding transfer method on hafnium oxide, sliding velocity is 1 mm/s, it can be achieved that about 10 s shift graphite
Alkene.Contain a small amount of gallium on the graphene shifted, can be got express developed by hydrochloric acid solution.
Embodiment 4, quick sliding transfer graphene
1）Selection thickness is 1 × 1 cm for 50 μm, size2Repeated growth leaf as growth substrate（Metal Substrate
Bottom）, each ultrasound 20min in acetone, ethanol, ultra-pure water.
2）30mg galliums are positioned in leaf under conditions of 40 °C of heating and it is adhered to above.
3）In hydrogen（Flow velocity is 30 sccm）And argon gas（Flow velocity is 350sccm）In, by step 2 in tube furnace）Gained
Growth substrate is heated to 1100 °C of growth temperature by room temperature through 35 min, is passed through carbon source methane at this time（Flow velocity is 10 sccm）,
Growth time is 50min, then Temperature fall, when temperature is down to 700 °C, Temperature fall of uncapping, when temperature is less than 200 °C
When close hydrogen, when temperature be less than 100 °C when close protective gas argon gas, take out sample, i.e., in step 2）Gained growth substrate
Surface obtains single-layer graphene provided by the invention.
4）By the step 3）The graphene of preparation takes out and is placed in thermal station, and the temperature of thermal station is at 40 °C.By target base
Bottom beryllium oxide is placed on graphene to be transferred, using the weaker active force of the mobility and liquid metal interlayer of liquid metal,
Transferred graphene to by sliding transfer method on beryllium oxide, sliding velocity is 1 mm/s, it can be achieved that about 10 s shift graphite
Alkene.Contain a small amount of gallium on the graphene shifted, can be got express developed by hydrochloric acid solution.
Embodiment 5, quick sliding transfer graphene
1）Selection thickness is 1 × 1 cm for 50 μm, size2Leaf as growth substrate（Metallic substrates）, in acetone, second
Each ultrasound 20min in alcohol, ultra-pure water.
2）10 mg gallium-indium alloys are positioned in leaf under conditions of 40 °C of heating and it is adhered to above.
3）In hydrogen（Flow velocity is 20sccm）And argon gas（Flow velocity is 300 sccm）In, by step 2 in tube furnace）Gained
Growth substrate is heated to 1000 °C of growth temperature by room temperature through 30min, is passed through carbon source methane at this time（Flow velocity is 15 sccm）, it is raw
Long-time is 30 min, then Temperature fall, when temperature is down to 700 °C, Temperature fall of uncapping, when temperature is less than 200 °C
When close hydrogen, when temperature be less than 100 °C when close protective gas argon gas, take out sample, i.e., in step 2）Gained growth substrate
Surface obtains single-layer graphene provided by the invention.
4）By the step 3）The graphene of preparation takes out and is placed in thermal station, and the temperature of thermal station is at 40 °C.By target base
Bottom silicon chip is placed on graphene to be transferred, using the weaker active force of the mobility and liquid metal interlayer of liquid metal, is led to
Cross sliding transfer method to transfer graphene in the silicon base with 300 nm thermal oxide layers, sliding velocity is 10 mm/s, can
Realize about 1 s transfer graphenes.Contain a small amount of gallium-indium alloy on the graphene shifted, can be got express developed by hydrochloric acid solution
Fall.
Embodiment 6, quick sliding transfer graphene
1）Selection thickness is 1 × 1 cm for 50 μm, size2Leaf as growth substrate（Metallic substrates）, acetone,
Each ultrasound 20min in ethanol, ultra-pure water.
2）20 mg gallium-indium-tin alloys are positioned in leaf under conditions of 40 °C of heating and it is adhered to above.
3）In hydrogen（Flow velocity is 40sccm）And argon gas（Flow velocity is 300 sccm）In, by step 2 in tube furnace）Gained
Growth substrate is heated to 1020 °C of growth temperature by room temperature through 35 min, is passed through carbon source methane at this time（Flow velocity is 10 sccm）,
Growth time is 30 min, then Temperature fall, when temperature is down to 700 °C, Temperature fall of uncapping, when temperature is less than 200 °
Hydrogen is closed during C, protective gas argon gas is closed when temperature is less than 100 °C, takes out sample, i.e., in step 2）Gained grows base
Basal surface obtains single-layer graphene provided by the invention.
4）By the step 3）The graphene of preparation takes out and is placed in thermal station, and the temperature of thermal station is at 40 °C.By target base
Bottom PET film is placed on graphene to be transferred, using the weaker active force of the mobility and liquid metal interlayer of liquid metal, is led to
Cross sliding transfer method to transfer graphene on PET film, sliding velocity is 5 mm/s, it can be achieved that about 2 s shift graphene.Institute
Contain a small amount of gallium on the graphene of transfer, can be got express developed by hydrochloric acid solution.
The present invention is not limited in above example, as long as graphene can be grown on low-melting-point metal, can use
This method shifts.
Claims (10)
- A kind of 1. method for shifting graphene, it is characterised in that comprise the following steps：（1）Using the metal of higher melt as metallic substrates, it is pre-processed；（2）It will be placed on compared with the metal or alloy of low melting point through step（1）In pretreated metallic substrates, with higher than compared with eutectic The temperature heating of the fusing point of point metal or alloy, must be stained with the metallic substrates compared with low-melting-point metal or alloy；（3）In step（2）What is prepared is stained with compared with graphene is grown in the metallic substrates of low-melting-point metal or alloy, up to growing There are the metallic substrates of graphene；（4）By step（3）The metallic substrates that the growth of preparation has graphene are placed on warm table, higher than low-melting-point metal or Heat, target substrate is put on graphene to be transferred at a temperature of the fusing point of alloy, graphene is slid onto into target substrate On.
- A kind of 2. method for shifting graphene according to claim 1, it is characterised in that：Further include to be rinsed with hydrochloric acid solution and turn Graphene after shifting.
- A kind of 3. method for shifting graphene according to claim 1 or claim 2, it is characterised in that：The step（1）In it is higher The metal of fusing point is cobalt, the one or more in iron, aluminium, gold, silver, copper, zinc, molybdenum, tungsten, titanium, vanadium, chromium, ruthenium, rhodium, platinum, palladium, iridium；The pretreatment is：It is 1 × 1 cm by size2Metallic substrates be sequentially placed into acetone, ethanol, ultra-pure water carry out ultrasound Processing, the ultrasonic time is 20 min.
- A kind of 4. method for shifting graphene according to claim 3, it is characterised in that：The metal of the higher melt is tungsten Or molybdenum.
- 5. according to a kind of method for shifting graphene of claim 1 or 2 or 4, it is characterised in that：The step（2）In Low-melting-point metal is gallium, indium or tin, and the alloy compared with low melting point is gallium, two or three of alloy formed in indium, tin；Compared with The addition of low-melting-point metal or alloy is 10 ~ 30 mg.
- 6. according to a kind of method for shifting graphene of claim 1 or 2 or 4, it is characterised in that：The step（3）Middle life The method of long graphene is chemical vapour deposition technique；The condition of chemical vapour deposition technique is：Atmosphere：Hydrogen and indifferent gas Body, the flow velocity of the hydrogen is 10 ~ 300 sccm, and the flow velocity of inert gas is 20 ~ 1000 sccm；Heating-up temperature for 500 ~ 1200 °C, the heating-up time is 20 ~ 50 min；Growth time is 10 ~ 120 min；The volume ratio of carbon-source gas and hydrogen is 3: 800~1 :2, carbon source is carbon monoxide, methane, ethane, propane, butane, pentane, hexane, hexamethylene, ethene, propylene, fourth two One or more in alkene, amylene, cyclopentadiene, acetylene, methanol, ethanol, benzene, toluene, phthalocyanine.
- A kind of 7. method for shifting graphene according to claim 6, it is characterised in that：The inert gas is nitrogen, argon One or both of gas, the flow velocity of the hydrogen is 20 ~ 40 sccm, and the flow velocity of inert gas is 250 ~ 350 sccm；Add Hot temperature is 800 ~ 1100, and the heating-up time is 30 ~ 35 min；Growth time is the volume of 30 ~ 70 min, carbon-source gas and hydrogen Than for 1: 3~1 :2, carbon source is methane, the one or more in ethanol, ethene, hexamethylene.
- A kind of 8. method for shifting graphene according to claim 7, it is characterised in that：The inert gas is argon gas, institute The flow velocity for stating inert gas is 300 sccm；The flow velocity of the hydrogen is 30 sccm；The volume ratio of the carbon-source gas and hydrogen For 1: 3；The carbon source is methane.
- 9. according to a kind of method for shifting graphene of claim 1 or 2 or 4 or 7 or 8, it is characterised in that：The step （4）In target substrate be silicon chip, quartz plate, plastic foil, mica sheet, hafnium oxide piece or beryllium oxide；The sliding velocity is 0.1 ~100 mm/s。
- A kind of 10. method for shifting graphene according to claim 9, it is characterised in that：The plastic foil is PET film；Institute It is 1 ~ 10 mm/s to state sliding velocity.
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