CN106252475A - CSP light source and manufacture method thereof - Google Patents
CSP light source and manufacture method thereof Download PDFInfo
- Publication number
- CN106252475A CN106252475A CN201610838830.0A CN201610838830A CN106252475A CN 106252475 A CN106252475 A CN 106252475A CN 201610838830 A CN201610838830 A CN 201610838830A CN 106252475 A CN106252475 A CN 106252475A
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- Prior art keywords
- light source
- luminescence chip
- fluorescent
- csp light
- transparent
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000004020 luminiscence type Methods 0.000 claims abstract description 44
- 239000000084 colloidal system Substances 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 238000012946 outsourcing Methods 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002313 adhesive film Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims abstract description 6
- 239000000741 silica gel Substances 0.000 claims abstract description 6
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 6
- 108010025899 gelatin film Proteins 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 28
- 239000000463 material Substances 0.000 abstract description 7
- 230000004907 flux Effects 0.000 abstract description 6
- 239000012790 adhesive layer Substances 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 4
- 239000003292 glue Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
Abstract
The present invention provides a kind of CSP light source and manufacture method thereof, and it includes luminescence chip, and this luminescence chip is provided with fluorescent colloid layer, and the surrounding of this luminescence chip and fluorescent colloid layer is surrounded the outsourcing colloid layer with reflective function.The manufacture method of CSP light source of the present invention includes: transparent adhesive film is pasted onto on support plate by (1)；(2) fluorescent coating is pasted onto on transparent adhesive film；(3) on fluorescent coating, liquid transparent silica gel film is coated；(4) luminescence chip reversely it is mounted on the transparent silicon glued membrane of liquid and is heating and curing；(5) the transparent silicon glue-line edge cuts along next-door neighbour's luminescence chip goes out specific width raceway groove；(6) in the raceway groove cut out, coating has the outsourcing colloid of reflective function and solidifies.CSP light source of the present invention is provided with the outsourcing colloid layer with reflective function, defines concentration structure, beneficially optically focused, reduces luminous flux loss, improves the overall brightness of light source, and increase central light strength；And owing to fluorescent adhesive layer is positioned at the surface of blue light emitting chip, fluorescent material can fully be excited, and improves the light extraction efficiency of light source.
Description
[technical field]
The present invention relates to lighting field, especially relate to a kind of CSP light source and manufacture method thereof.
[background technology]
Existing common five luminous CSP light sources (Chip Scale Package, wafer-level package) structure institute as shown in Figure 1, Figure 2
Show, it by be positioned at middle part luminescence chip 110 and from above with surrounding surround luminescence chip fluorescent colloid 120 form.Wherein,
Luminescence chip 110 is the flip-chip that electrode is positioned at chip bottom, makes light source directly to weld with application end substrate, saves defluxing
Line procedures, avoids tradition SMD light source simultaneously and easily breaks the reliability problem of dead lamp；Fluorescent glue is by transparent silica gel, fluorescent material
Mix with auxiliary additive.
The feature of existing common five luminous CSP light sources is that rising angle is very big, is possible not only to from surrounding and above
Five face luminescences, some light also sends from the peripheral colloid of bottom-emission chip, due to this feature, common five luminescences
CSP light source is by splendid optical uniformity；Additionally, this five faces go out the CSP light source of light because of simple in construction, material composition kind few,
Make this light source can save a large amount of material and processing procedure and technique is relatively easy.
But the structure of existing five luminous CSP light sources is while having bigger rising angle, also brings new asking
Topic:
(1) the most luminous due to five faces, cause light source center luminance shortage, it is impossible to applied in such as mobile phone flashlight etc.
The field that heart brightness demand is higher；
(2), at the fluorescent glue of luminescence chip bottom periphery, after the blue light sent by luminescence chip excites, the light of generation can be from
Bottom sends, the light of this some would generally because repeatedly reflecting, the decay rapidly such as reflection, cause the overall luminous flux of light source to drop
Low, the utilization rate of light is the highest；
(3) exposed in periphery due to fluorescent colloid, when phosphor concentration is too high in colloid, using five luminous CSP
During light source, colloid fragmentation, damaged situation, when this occurs, the chromaticity coordinates of CSP light source, color easily occur
The performance parameters such as temperature will occur bigger skew, and this aberrations in property of CSP light source is flagrant, especially carry on the back at TV
The occasion that light, display screen technology etc. are of a relatively high to the photoelectric color parameter precision of light source；
(4) common five luminous CSP light sources, luminescence chip is bonding with fluorescent colloid be by colloid carry intrinsic bonding
Performance, this bonding force is the least so that this CSP light source in use, easily occurs that fluorescent colloid departs from luminescence chip,
Cause the situation of light source fails.
Therefore it provides a kind of brightness uniformity, center brightness foot, luminous flux are high, colour temperature CSP light source stable, constitutionally stable
And manufacture method is the most necessary.
[summary of the invention]
It is an object of the invention to provide a kind of overall brightness height, the CSP light source of central light strength raising and manufacture method thereof.
For realizing the object of the invention, it is provided that techniques below scheme:
The present invention provides a kind of CSP light source, and it includes luminescence chip, and this luminescence chip is provided with fluorescent colloid layer, this
The surrounding of optical chip and fluorescent colloid layer is surrounded the outsourcing colloid layer with reflective function.
CSP light source of the present invention is provided with the outsourcing colloid layer with reflective function, defines concentration structure, beneficially optically focused,
Reduce luminous flux loss, improve the overall brightness of light source, and increase central light strength；And owing to fluorescent adhesive layer is positioned at blue light
The surface of luminescence chip, fluorescent material can fully be excited, and improves the light extraction efficiency of light source.
Preferably, this CSP light source also includes the first transparent silicon glue-line, the second transparent silicon glue-line, with described luminescence chip,
The order that fluorescent colloid layer four-layer structure together from bottom to top sets gradually is: luminescence chip, the first transparent silicon glue-line, luminous core
Sheet, the second transparent silicon glue-line, described in there is the outsourcing colloid layer of reflective function be enclosed in this four-layer structure surrounding.
Preferably, this outsourcing colloid layer is to have highly reflective energy and the white colloidal layer of high tensile strength.
The present invention also provides for the manufacture method of a kind of CSP light source, and it comprises the steps:
(1) transparent adhesive film is pasted onto on support plate；
(2) fluorescent coating is pasted onto on transparent adhesive film；
(3) on fluorescent coating, liquid transparent silica gel film is coated；
(4) luminescence chip reversely it is mounted on the transparent silicon glued membrane of liquid and is heating and curing；
(5) the transparent silicon glue-line edge cuts along next-door neighbour's luminescence chip goes out specific width raceway groove；
(6) in the raceway groove cut out, coating has the outsourcing colloid of reflective function and solidifies.
Preferably, step (4) mounts multiple luminescence chips, along the transparent silicon of adjacent luminescence chip in step (5)
Glue-line cuts out specific width raceway groove, and after step (6), includes step (7) along will outward in the middle of adjacent luminescence chip
Encapsulated body cuts off.
Preferably, also include that step (7) gained light source is separated by step (8) and form single CSP light source.
Preferably, this outsourcing colloid is to have highly reflective energy and the white colloidal of high tensile strength.
Contrast prior art, the invention have the advantages that
Owing to defining concentration structure with the white colloidal with high reflectance, beneficially optically focused, reduces luminous flux loss, carries
Rise the overall brightness of light source, and increase central light strength；
This white colloidal has stronger tensile break strength, and good springiness, after surrounding fluorescent coating and luminescence chip,
In use playing cushioning effect, when light source falls or collides, fluorescent coating and luminescence chip will not damage；
Owing to fluorescent adhesive layer is positioned at the surface of blue light emitting chip, fluorescent material can fully be excited, and improves light source
Light extraction efficiency.
[accompanying drawing explanation]
Fig. 1 is prior art five luminous CSP light-source structure side view；
Fig. 2 is prior art five luminous CSP light-source structure top view；
Fig. 3 is CSP light-source structure side view of the present invention；
Fig. 4 is the schematic flow sheet of CSP light-source structure manufacture method of the present invention.
[detailed description of the invention]
Refer to Fig. 3, in the present embodiment, luminescence chip 210 that CSP light source of the present invention includes from bottom to top setting gradually,
First transparent silicon glue-line 230, fluorescent colloid layer the 240, second transparent silicon glue-line 250 are transparent at described luminescence chip 210, first
Layer of silica gel 230, the surrounding encirclement of fluorescent colloid layer the 240, second transparent silicon glue-line 250 four-layer structure have and have outside reflective function
Bag colloid layer 220.
This outsourcing colloid layer 220 is to have highly reflective energy and the white colloidal layer of high tensile strength.
Specifically, this outsourcing colloid layer 220 is combined into similar bowl structure with luminescence chip 210.Bottom luminescence chip 210
And the electrode that bottom is arranged exposes.
As replaceable embodiment, fluorescent colloid layer can be provided with on this luminescence chip 210, at this luminescence chip and
The surrounding of fluorescent colloid layer is surrounded the outsourcing colloid layer with reflective function.
CSP light source of the present invention is provided with the outsourcing colloid layer 220 with reflective function, defines concentration structure, is beneficial to poly-
Light, reduces luminous flux loss, improves the overall brightness of light source, and increase central light strength；And owing to fluorescent adhesive layer is positioned at
The surface of blue light emitting chip, fluorescent material can fully be excited, and improves the light extraction efficiency of light source.
Please participate in Fig. 4, the manufacture method of CSP light source of the present invention, it comprises the steps:
S1, transparent silicon glued membrane is pasted onto on support plate；
S2, by the own stickiness of fluorescent coating, fluorescent coating is pasted onto on above-mentioned transparent silicon glued membrane, and vacuum,
Pressing under heating, pressurized conditions；
S3, coating liquid transparent silica gel film on fluorescent coating, coating method is some glue or printing；
S4, multiple luminescence chips reversely (electrode is upward) are mounted on the transparent silicon glued membrane of liquid and under vacuum
It is heating and curing；
S5, in the middle of the transparent silicon glue-line of adjacent luminescence chip, cut out specific width raceway groove, during cutting simultaneously and disconnected S1
With the transparent silicon glue-line described in S2 and fluorescent adhesive layer；
S6, in the raceway groove cut out coating there is the white colloidal of reflective function, white colloidal can not flood chip electrode,
And solidify under vacuum, heating condition, this white colloidal is to have highly reflective energy and the white colloidal of high tensile strength；
S7, along adjacent luminescence chip centre by white colloidal cut off；
S8, by step S7 gained light source separate formed single CSP light source.
In step S1, described support plate can be must to have Mark point on glass substrate or corrosion resistant plate, and support plate, as arrangement
The identification point of the operation such as chip and cutting；Above-mentioned second transparent silicon glue-line 250 it is after this transparent silicon coating film forming.
In step S2, after this fluorescent coating molding, it is the fluorescent colloid layer 240 of said structure.
In step S3, after this liquid clear Silicon moulds molding, it is the first transparent silicon glue-line 230 of said structure.
In step S6, the raceway groove cut out is after the white colloidal molding of coating the outsourcing colloid layer of said structure
220。
The foregoing is only presently preferred embodiments of the present invention, protection scope of the present invention is not limited thereto, any based on
Within equivalent transformation in technical solution of the present invention belongs to scope.
Claims (7)
1. a CSP light source, it includes luminescence chip, it is characterised in that this luminescence chip is provided with fluorescent colloid layer, this luminescence
The surrounding of chip and fluorescent colloid layer is surrounded the outsourcing colloid layer with reflective function.
2. CSP light source as claimed in claim 1, it is characterised in that this CSP light source also include the first transparent silicon glue-line, the
Two transparent silicon glue-lines, the order that four-layer structure from bottom to top sets gradually together with described luminescence chip, fluorescent colloid layer is: send out
Optical chip, the first transparent silicon glue-line, luminescence chip, the second transparent silicon glue-line, described in there is the outsourcing colloid layer bag of reflective function
It is trapped among this four-layer structure surrounding.
3. CSP light source as claimed in claim 2, it is characterised in that this outsourcing colloid layer is for having highly reflective energy and higher
The white colloidal layer of hot strength.
4. the manufacture method of a CSP light source, it is characterised in that it comprises the steps:
(1) transparent adhesive film is pasted onto on support plate；
(2) fluorescent coating is pasted onto on transparent adhesive film；
(3) on fluorescent coating, liquid transparent silica gel film is coated；
(4) luminescence chip reversely it is mounted on the transparent silicon glued membrane of liquid and is heating and curing；
(5) the transparent silicon glue-line edge cuts along next-door neighbour's luminescence chip goes out specific width raceway groove；
(6) in the raceway groove cut out, coating has the outsourcing colloid of reflective function and solidifies.
5. the manufacture method of CSP light source as claimed in claim 4, it is characterised in that the multiple luminous core of attachment in step (4)
Sheet, cuts out specific width raceway groove in step (5) along the transparent silicon glue-line of adjacent luminescence chip, and after step (6)
Include the step (7) centre along adjacent luminescence chip by the cut-out of outsourcing colloid.
6. the manufacture method of CSP light source as claimed in claim 5, it is characterised in that also include that step (8) is by step (7) institute
Obtain light source and separate the single CSP light source of formation.
7. the manufacture method of CSP light source as claimed in claim 6, it is characterised in that this outsourcing colloid is for having highly reflective
Can be with the white colloidal of high tensile strength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610838830.0A CN106252475A (en) | 2016-09-21 | 2016-09-21 | CSP light source and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610838830.0A CN106252475A (en) | 2016-09-21 | 2016-09-21 | CSP light source and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106252475A true CN106252475A (en) | 2016-12-21 |
Family
ID=57599033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610838830.0A Pending CN106252475A (en) | 2016-09-21 | 2016-09-21 | CSP light source and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106252475A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107591468A (en) * | 2017-07-14 | 2018-01-16 | 昆山芯乐光光电科技有限公司 | A kind of emitting led method for packing of one side based on CSP encapsulating structures |
| CN110494991A (en) * | 2017-04-04 | 2019-11-22 | 欧司朗光电半导体有限公司 | Manufacture the method for the semiconductor devices of multiple transmitting radiation and the semiconductor devices of transmitting radiation |
| WO2020103898A1 (en) * | 2018-11-22 | 2020-05-28 | 江西省晶能半导体有限公司 | Led light bulb manufacturing method |
| CN111785710A (en) * | 2020-07-28 | 2020-10-16 | 江西省晶能半导体有限公司 | LED lamp bead and preparation method thereof |
| CN113764546A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Mini-LED device, LED display module and manufacturing method thereof |
| CN115425124A (en) * | 2022-10-17 | 2022-12-02 | 硅能光电半导体(广州)有限公司 | Preparation method of flip white light LED packaging structure |
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| CN106058020A (en) * | 2016-07-08 | 2016-10-26 | 深圳市兆驰节能照明股份有限公司 | Bowl-shaped structure chip-scale package luminescence apparatus and manufacturing method thereof |
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| US20020079837A1 (en) * | 2000-12-19 | 2002-06-27 | Jun Okazaki | Chip-type LED and process of manufacturing the same |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110494991A (en) * | 2017-04-04 | 2019-11-22 | 欧司朗光电半导体有限公司 | Manufacture the method for the semiconductor devices of multiple transmitting radiation and the semiconductor devices of transmitting radiation |
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| WO2020103898A1 (en) * | 2018-11-22 | 2020-05-28 | 江西省晶能半导体有限公司 | Led light bulb manufacturing method |
| CN111785710A (en) * | 2020-07-28 | 2020-10-16 | 江西省晶能半导体有限公司 | LED lamp bead and preparation method thereof |
| CN111785710B (en) * | 2020-07-28 | 2023-06-09 | 江西省晶能半导体有限公司 | LED lamp bead and preparation method thereof |
| CN113764546A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Mini-LED device, LED display module and manufacturing method thereof |
| CN115425124A (en) * | 2022-10-17 | 2022-12-02 | 硅能光电半导体(广州)有限公司 | Preparation method of flip white light LED packaging structure |
| CN115425124B (en) * | 2022-10-17 | 2024-01-26 | 硅能光电半导体(广州)有限公司 | Preparation method of flip white light LED packaging structure |
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Application publication date: 20161221 |
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