CN106252313A - A kind of bond pad structure - Google Patents
A kind of bond pad structure Download PDFInfo
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- CN106252313A CN106252313A CN201610890596.6A CN201610890596A CN106252313A CN 106252313 A CN106252313 A CN 106252313A CN 201610890596 A CN201610890596 A CN 201610890596A CN 106252313 A CN106252313 A CN 106252313A
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- top layer
- network
- hole
- bond pad
- supporting construction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L24/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
- H01L2224/0901—Structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
- H01L2224/091—Disposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
- H01L2224/091—Disposition
- H01L2224/0912—Layout
- H01L2224/0914—Circular array, i.e. array with radial symmetry
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
- H01L2224/091—Disposition
- H01L2224/0912—Layout
- H01L2224/0914—Circular array, i.e. array with radial symmetry
- H01L2224/09143—Circular array, i.e. array with radial symmetry with a staggered arrangement
Abstract
The invention provides a kind of bond pad structure, including: top layer through hole grid domain part and the top layer through hole supporting construction domain part being arranged in the grid in top layer through hole grid domain part；Wherein top layer through hole supporting construction domain part has centrosymmetric structure.In the present invention, fill the supporting construction with centrosymmetry pattern in the cancellated gap of top layer through hole grid domain part, such that it is able to the stress of dispersion all directions；Thus, present invention offer a kind of bond pad structure that can be used for copper bonding that enough support forces can be provided.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of bond pad structure.
Background technology
When conventional bond pad (bonding pad) is applied to copper bonding (Cu bonding, or referred to as copper joint), its
Compressive stress is relatively big, easily makes the inter-level dielectric under bond pad top aluminum (Top metal) ftracture (top IMD crack) etc.
Integrity problem.Its reason is that the support force that the circular hole top layer through hole (top VIA) commonly used provides is not enough, and inter-level dielectric
Mostly being silicon oxide, quality is more crisp, can ftracture under bigger pressure.
Accordingly, it is desirable to be able to provide a kind of bond pad structure that can be used for copper bonding that can provide enough support forces.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that one can provide
Enough bond pad structure that can be used for copper bonding of support force.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that a kind of bond pad structure, including: top layer through hole
Grid domain part and the top layer through hole supporting construction domain portion being arranged in the grid in top layer through hole grid domain part
Point；Wherein top layer through hole supporting construction domain part has centrosymmetric structure.
Preferably, top layer through hole grid domain part is to be tied by the multiple grids longitudinally and transversely going up equal alignment
The network structure being configured to, and the top layer through hole being disposed with rectangle in each network or Partial Mesh structure supports
Structure domain part.
Preferably, top layer through hole grid domain part be by alignment on a direction in horizontal and vertical
The network structure that on another direction in horizontal and vertical, multiple networks of interlaced arrangement are formed, and at each grid
Structure or Partial Mesh structure are disposed with the top layer through hole supporting construction domain part of rectangle.
Preferably, top layer through hole grid domain part is to be tied by the multiple grids longitudinally and transversely going up equal alignment
The network structure being configured to；And the top layer through hole supporting construction domain being formed a laterally extending in Part I network
Shape, the top layer through hole supporting construction layout shape being formed a laterally extending in Part II network, wherein first
Subnetting lattice structure and Part II network interlaced arrangement.
Preferably, top layer through hole grid domain part be by alignment on a direction in horizontal and vertical
The network structure that on another direction in horizontal and vertical, multiple networks of interlaced arrangement are formed；And at Part I
The top layer through hole supporting construction layout shape being formed a laterally extending in network, is formed in Part II network
The top layer through hole supporting construction layout shape of horizontal expansion, wherein Part I network and Part II network are interlocked
Arrange.
Preferably, top layer through hole grid domain part is to be tied by the multiple grids longitudinally and transversely going up equal alignment
The network structure being configured to；And in Part I network, it is formed with the first top layer through hole supporting construction extended obliquely out
Layout shape, is formed with the second top layer through hole supporting construction layout shape extended obliquely out in Part II network, its
Middle Part I network and Part II network positioned adjacent.
Preferably, top layer through hole grid domain part be by alignment on a direction in horizontal and vertical
The network structure that on another direction in horizontal and vertical, multiple networks of interlaced arrangement are formed；And at Part I
Network is formed the first top layer through hole supporting construction layout shape extended obliquely out, shape in Part II network
Become to have the second top layer through hole supporting construction layout shape extended obliquely out, wherein Part I network and Part II grid
Structure positioned adjacent.
Preferably, bonding wire is bonded on the aluminum of bond pad top by top layer through hole grid domain part so that top
Aluminum is connected with lower metal by top layer through hole.
Preferably, the characteristic size of top layer through hole grid domain part is between 0.6um to 0.8um.
Preferably, the size of mesh opening in the live width of top layer through hole grid domain part and top layer through hole grid domain part it
Between ratio between 1:5～1:3.
In the present invention, in the cancellated gap of top layer through hole grid domain part, filling has centrosymmetry pattern
Supporting construction, such that it is able to dispersion all directions stress；Thus, present invention offer is a kind of can provide enough support forces
Can be used for the bond pad structure of copper bonding.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete understanding
And its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 schematically shows the first example of bond pad structure according to the preferred embodiment of the invention.
Fig. 2 schematically shows the second example of bond pad structure according to the preferred embodiment of the invention.
Fig. 3 schematically shows the 3rd example of bond pad structure according to the preferred embodiment of the invention.
Fig. 4 schematically shows the 4th example of bond pad structure according to the preferred embodiment of the invention.
Fig. 5 schematically shows the 5th example of bond pad structure according to the preferred embodiment of the invention.
Fig. 6 schematically shows the 6th example of bond pad structure according to the preferred embodiment of the invention.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicates same or like label.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings in the present invention
Appearance is described in detail.
The present invention, by changing top layer through hole domain, can be effectively improved the bond pad performance when copper bonding.At root
According in the bond pad structure of the preferred embodiment of the present invention, top layer through hole domain includes: top layer through hole grid domain part 100 with
And the top layer through hole supporting construction domain part being arranged in the grid in top layer through hole grid domain part 100；Wherein top layer
Through hole supporting construction domain part has centrosymmetric structure.
Such as, bonding wire is bonded on the aluminum of bond pad top by top layer through hole grid domain part 100 so that top
Aluminum is connected with lower metal by top layer through hole.Preferably, the characteristic size of top layer through hole grid domain part 100 between
Between 0.6um to 0.8um.Preferably, the characteristic size of top layer through hole grid domain part 100 and top layer through hole supporting construction version
The characteristic size of figure part is identical.
It is further preferred that top layer through hole grid domain part 100 and top layer through hole supporting construction domain are partially forming work
Skill uses same mask plate.
Preferably, the live width of top layer through hole grid domain part 100 and the grid in top layer through hole grid domain part 100
Ratio between size is between 1:5～1:3, and such as ratio is 1:3, and this ratio can also be other suitable numerical value certainly.
Below in conjunction with concrete accompanying drawing, the concrete example of embodiments of the invention is described in detail.
<the first example>
Fig. 1 schematically shows the first example of bond pad structure according to the preferred embodiment of the invention.
Specifically, as it is shown in figure 1, in the first example of bond pad structure according to the preferred embodiment of the invention, top
Layer through hole grid domain part 100 is the netted knot formed by the multiple networks longitudinally and transversely going up equal alignment
Structure, and in each network or Partial Mesh structure, it is disposed with the top layer through hole supporting construction domain part of rectangle
200。
In the present invention, in the cancellated gap of top layer through hole grid domain part, filling has centrosymmetry pattern
Supporting construction, such that it is able to dispersion all directions stress；Thus, present invention offer is a kind of can provide enough support forces
Can be used for the bond pad structure of copper bonding.
<the second example>
Fig. 2 schematically shows the second example of bond pad structure according to the preferred embodiment of the invention.
Specifically, as in figure 2 it is shown, in the second example of bond pad structure according to the preferred embodiment of the invention, top
Layer through hole grid domain part 100 for by alignment on a direction in horizontal and vertical in horizontal and vertical
The network structure that on another direction, multiple networks of interlaced arrangement are formed, and at each network or part net
Lattice structure is disposed with the top layer through hole supporting construction domain part 200 of rectangle.
In the present invention, in the cancellated gap of top layer through hole grid domain part, filling has centrosymmetry pattern
Supporting construction, such that it is able to dispersion all directions stress；Thus, present invention offer is a kind of can provide enough support forces
Can be used for the bond pad structure of copper bonding.
<the 3rd example>
Fig. 3 schematically shows the 3rd example of bond pad structure according to the preferred embodiment of the invention.
Specifically, as it is shown on figure 3, in the 3rd example of bond pad structure according to the preferred embodiment of the invention, top
Layer through hole grid domain part 100 is the netted knot formed by the multiple networks longitudinally and transversely going up equal alignment
Structure；And the top layer through hole supporting construction layout shape 10 being formed a laterally extending in Part I network, second
The top layer through hole supporting construction layout shape 20 being formed a laterally extending in Partial Mesh structure, wherein Part I network
With Part II network interlaced arrangement.
In the present invention, in the cancellated gap of top layer through hole grid domain part, filling has centrosymmetry pattern
Supporting construction, such that it is able to dispersion all directions stress；Thus, present invention offer is a kind of can provide enough support forces
Can be used for the bond pad structure of copper bonding.
<the 4th example>
Fig. 4 schematically shows the 4th example of bond pad structure according to the preferred embodiment of the invention.
Specifically, as shown in Figure 4, in the 4th example of bond pad structure according to the preferred embodiment of the invention, top
Layer through hole grid domain part 100 for by alignment on a direction in horizontal and vertical in horizontal and vertical
The network structure that on another direction, multiple networks of interlaced arrangement are formed；And formed in Part I network
There are the top layer through hole supporting construction layout shape 10 of horizontal expansion, the top being formed a laterally extending in Part II network
Layer through hole supporting construction layout shape 20, wherein Part I network and Part II network interlaced arrangement.
In the present invention, in the cancellated gap of top layer through hole grid domain part, filling has centrosymmetry pattern
Supporting construction, such that it is able to dispersion all directions stress；Thus, present invention offer is a kind of can provide enough support forces
Can be used for the bond pad structure of copper bonding.
<the 5th example>
Fig. 5 schematically shows the 5th example of bond pad structure according to the preferred embodiment of the invention.
Specifically, as it is shown in figure 5, in the 5th example of bond pad structure according to the preferred embodiment of the invention, top
Layer through hole grid domain part 100 is the netted knot formed by the multiple networks longitudinally and transversely going up equal alignment
Structure；And in Part I network, it is formed with the first top layer through hole supporting construction layout shape 30 extended obliquely out,
Part II network is formed the second top layer through hole supporting construction layout shape 40 extended obliquely out, wherein Part I
Network and Part II network positioned adjacent.
In the present invention, in the cancellated gap of top layer through hole grid domain part, filling has centrosymmetry pattern
Supporting construction, such that it is able to dispersion all directions stress；Thus, present invention offer is a kind of can provide enough support forces
Can be used for the bond pad structure of copper bonding.
<the 6th example>
Fig. 6 schematically shows the 6th example of bond pad structure according to the preferred embodiment of the invention.
Specifically, as shown in Figure 6, in the 6th example of bond pad structure according to the preferred embodiment of the invention, top
Layer through hole grid domain part 100 for by alignment on a direction in horizontal and vertical in horizontal and vertical
The network structure that on another direction, multiple networks of interlaced arrangement are formed；And formed in Part I network
There is the first top layer through hole supporting construction layout shape 30 extended obliquely out, in Part II network, be formed with second oblique
The top layer through hole supporting construction layout shape 40 extended, wherein Part I network and Part II network adjoin cloth
Put.
In the present invention, in the cancellated gap of top layer through hole grid domain part, filling has centrosymmetry pattern
Supporting construction, such that it is able to dispersion all directions stress；Thus, present invention offer is a kind of can provide enough support forces
Can be used for the bond pad structure of copper bonding.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ", " the
Two ", " the 3rd " etc. describe be used only for distinguishing in description each assembly, element, step etc. rather than for representing each
Logical relation between assembly, element, step or ordering relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
Technical solution of the present invention is made many possible variations and modification by the technology contents that all may utilize the disclosure above, or is revised as
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
In.
But also it should be understood that the present invention is not limited to specific method described herein, compound, material, system
Making technology, usage and application, they can change.Should also be understood that term described herein is used merely to describe specific
Embodiment rather than be used for limit the scope of the present invention.Must be noted that herein and in claims use
Singulative " one ", " a kind of " and " being somebody's turn to do " include complex reference, unless context explicitly indicates that contrary.Therefore, example
As, the citation to " element " means the citation to one or more elements, and includes known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
Multiple steps or the citation of device, and potentially include secondary step and second unit.Should manage with broadest implication
Solve all conjunctions used.Therefore, word "or" should be understood that definition rather than the logical exclusive-OR with logical "or"
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as also quoting from the function of this structure
Equivalent.Can be interpreted that the language of approximation should be understood, like that unless context explicitly indicates that contrary.
Claims (10)
1. a bond pad structure, it is characterised in that including: top layer through hole grid domain part and be arranged in top layer through hole
Top layer through hole supporting construction domain part in grid in grid domain part；Wherein top layer through hole supporting construction domain part
There is centrosymmetric structure.
Bond pad structure the most according to claim 1, it is characterised in that top layer through hole grid domain part is by horizontal stroke
The network structure that upwards the multiple networks with upper equal alignment are formed, and in each network or part
Network is disposed with the top layer through hole supporting construction domain part of rectangle.
Bond pad structure the most according to claim 1, it is characterised in that top layer through hole grid domain part is by horizontal stroke
To with multiple nets of interlaced arrangement in alignment on a direction in longitudinal direction and another direction in horizontal and vertical
The network structure that lattice structure is formed, and in each network or Partial Mesh structure, it is disposed with the top layer through hole of rectangle
Supporting construction domain part.
Bond pad structure the most according to claim 1, it is characterised in that top layer through hole grid domain part is by horizontal stroke
The network structure that upwards the multiple networks with upper equal alignment are formed；And in Part I network shape
Become to have the top layer through hole supporting construction layout shape of horizontal expansion, the top being formed a laterally extending in Part II network
Layer through hole supporting construction layout shape, wherein Part I network and Part II network interlaced arrangement.
Bond pad structure the most according to claim 1, it is characterised in that top layer through hole grid domain part is by horizontal stroke
To with multiple nets of interlaced arrangement in alignment on a direction in longitudinal direction and another direction in horizontal and vertical
The network structure that lattice structure is formed；And the top layer through hole supporting construction being formed a laterally extending in Part I network
Layout shape, the top layer through hole supporting construction layout shape being formed a laterally extending in Part II network, Qi Zhong
A part of network and Part II network interlaced arrangement.
Bond pad structure the most according to claim 1, it is characterised in that top layer through hole grid domain part is by horizontal stroke
The network structure that upwards the multiple networks with upper equal alignment are formed；And in Part I network shape
Become to have the first top layer through hole supporting construction layout shape extended obliquely out, in Part II network, be formed with second oblique
The top layer through hole supporting construction layout shape extended, wherein Part I network and Part II network adjoin cloth
Put.
Bond pad structure the most according to claim 1, it is characterised in that top layer through hole grid domain part is by horizontal stroke
To with multiple nets of interlaced arrangement in alignment on a direction in longitudinal direction and another direction in horizontal and vertical
The network structure that lattice structure is formed；And in Part I network, be formed with the first top layer through hole extended obliquely out support
Structure layout shape, is formed with the second top layer through hole supporting construction domain shape extended obliquely out in Part II network
Shape, wherein Part I network and Part II network positioned adjacent.
8. according to the bond pad structure one of claim 1 to 7 Suo Shu, it is characterised in that bonding wire passes through top layer through hole
Grid domain part is bonded on the aluminum of bond pad top so that top aluminum is connected with lower metal by top layer through hole.
9. according to the bond pad structure one of claim 1 to 7 Suo Shu, it is characterised in that top layer through hole grid domain part
Characteristic size between 0.6um to 0.8um.
10. according to the bond pad structure one of claim 1 to 7 Suo Shu, it is characterised in that top layer through hole grid domain part
Live width and top layer through hole grid domain part in size of mesh opening between ratio between 1:5～1:3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610890596.6A CN106252313B (en) | 2016-10-12 | 2016-10-12 | A kind of bond pad structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610890596.6A CN106252313B (en) | 2016-10-12 | 2016-10-12 | A kind of bond pad structure |
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| CN106252313A true CN106252313A (en) | 2016-12-21 |
| CN106252313B CN106252313B (en) | 2018-12-11 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111584450A (en) * | 2020-05-26 | 2020-08-25 | 四川中微芯成科技有限公司 | IO pad structure for wire bonding |
| CN113241336A (en) * | 2021-04-27 | 2021-08-10 | 上海华虹宏力半导体制造有限公司 | Semiconductor device structure and forming method thereof |
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| CN2696127Y (en) * | 2004-04-22 | 2005-04-27 | 台湾积体电路制造股份有限公司 | Structure of joint pad |
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| CN111584450A (en) * | 2020-05-26 | 2020-08-25 | 四川中微芯成科技有限公司 | IO pad structure for wire bonding |
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| CN113241336B (en) * | 2021-04-27 | 2023-12-01 | 上海华虹宏力半导体制造有限公司 | Semiconductor device structure and forming method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106252313B (en) | 2018-12-11 |
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