CN106245005A - Plasma enhanced chemical vapor deposition unit - Google Patents
Plasma enhanced chemical vapor deposition unit Download PDFInfo
- Publication number
- CN106245005A CN106245005A CN201610834267.XA CN201610834267A CN106245005A CN 106245005 A CN106245005 A CN 106245005A CN 201610834267 A CN201610834267 A CN 201610834267A CN 106245005 A CN106245005 A CN 106245005A
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- China
- Prior art keywords
- connecting hole
- vapor deposition
- chemical vapor
- enhanced chemical
- plasma enhanced
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The open a kind of plasma enhanced chemical vapor deposition unit of the present invention, including: reaction chamber, the sidewall of described reaction chamber sets opening valve；Upper electrode and bottom electrode, be oppositely disposed at the inside of described reaction chamber；And radio frequency feedthrough, electrically connect described upper electrode, for producing plasma enhanced chemical vapor deposition reaction in the inside of described reaction chamber, with shape film forming layer on the substrate being placed on described bottom electrode, between center and the described opening valve of input point electrode on described of described radio frequency feedthrough.The product yield of plasma enhanced chemical vapor deposition unit of the present invention is high.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing technology field, particularly relate to a kind of plasma enhanced chemical vapor deposition
Device.
Background technology
Existing plasma enhanced chemical vapor deposition unit (Plasma Enhanced Chemical Vapor
Deposition, PECVD) in the input point typically electrode on being located at of radio frequency (Radio Frequency, RF) feedthrough
Center.Owing to the side of the reaction chamber of plasma enhanced chemical vapor deposition unit is provided with for picking and placeing glass substrate
Opening valve (Slit Valve), so the design of reaction chamber both sides can be caused asymmetric, form film layer on the glass substrate
Thickness distribution uniformity poor, reduce the product yield of plasma enhanced chemical vapor deposition unit.
Summary of the invention
The technical problem to be solved is the PECVD providing a kind of product yield high
Precipitation equipment.
To achieve these goals, embodiment of the present invention adopts the following technical scheme that
A kind of plasma enhanced chemical vapor deposition unit is provided, including:
Reaction chamber, the sidewall of described reaction chamber sets opening valve；
Upper electrode and bottom electrode, be oppositely disposed at the inside of described reaction chamber；And
Radio frequency feedthrough, electrically connects described upper electrode, increases for producing plasma in the inside of described reaction chamber
Extensive chemical vapor deposition reaction, with shape film forming layer on the substrate being placed on described bottom electrode, described radio frequency feedthrough defeated
Between center and the described opening valve of access point electrode on described.
Wherein, described upper electrode offers the multiple connecting holes being intervally arranged, and the plurality of connecting hole is positioned at described upper electrode
Center and described opening valve between, described radio frequency feedthrough includes connector, is connected by described connector by securing member
To the plurality of connecting hole.
Wherein, being smaller than between the center of at least one connecting hole in the plurality of connecting hole and described upper electrode
Equal to 10cm.
Wherein, the electrode upslide shadow on described of the line between center and the described opening valve of described upper electrode forms first
Line, the plurality of connecting hole is arranged on described First Line, described connector be connected in the plurality of connecting hole wherein one
Individual connecting hole.
Wherein, the plurality of connecting hole equidistantly arranges.
Wherein, the electrode upslide shadow on described of the line between center and the described opening valve of described upper electrode forms first
Line, the plurality of connecting hole includes first row connecting hole and second row connecting hole, described first row connecting hole and described second row
Connecting hole the most described First Line symmetry arrangement, one of them connection that described connector is connected in described first row connecting hole
One of them connecting hole in hole and described second row connecting hole.
Wherein, the plurality of connecting hole is through hole or blind hole.
Wherein, described upper electrode includes the roof being oppositely arranged, diapire, is connected between described roof and described diapire
Side perisporium and inlet tube, the input point of described radio frequency feedthrough is positioned at described roof, described roof, described diapire and
Described side perisporium encloses and sets out current-sharing chamber, and one end of described inlet tube connects described roof, and the other end of described inlet tube stretches out
To the outside of described reaction chamber, for input material to described current-sharing chamber, described diapire offers the multiple current-sharings being intervally arranged
Hole.
Wherein, the upper wall of described reaction chamber offers air inlet, and the lower wall of described reaction chamber offers steam vent, described in enter
Mouth pipe extend out to the outside of described reaction chamber by described air inlet.
Wherein, the plurality of equal discharge orifice is matrix arrangement.
Compared to prior art, the method have the advantages that
Due between center and the described opening valve of input point electrode on described of described radio frequency feedthrough so that
The maximum interference point of the electromagnetic wave that described radio frequency feedthrough inputs described upper electrode is located substantially at the center of described substrate, described
Plasma distribution even density in reaction chamber, deposition velocity is uniform, the film of formation described film layer on the substrate
Thick uniformly, the amount of contraction of described substrate is more consistent, it is possible to effectively prevent described substrate follow-up to box technique in paste
Close dislocation, it is to avoid apply the liquid crystal display of described substrate that light leak occurs, the most described plasma enhanced chemical vapor deposition
The product yield of device is high.
Accompanying drawing explanation
In order to be illustrated more clearly that technical scheme, the accompanying drawing used required in embodiment will be made below
Introduce simply, it should be apparent that, the accompanying drawing in describing below is only some embodiments of the present invention, general for this area
From the point of view of logical technical staff, on the premise of not paying creative work, it is also possible to as these accompanying drawings obtain other accompanying drawing.
Fig. 1 is the structural representation of a kind of plasma enhanced chemical vapor deposition unit that embodiment of the present invention provides
Figure.
Fig. 2 is the biography of the electromagnetic wave of a kind of plasma enhanced chemical vapor deposition unit that embodiment of the present invention provides
Defeated path schematic diagram.
Fig. 3 is the part-structure of a kind of plasma enhanced chemical vapor deposition unit that embodiment of the present invention provides
Exploded perspective view.
Fig. 4 is the part-structure of a kind of plasma enhanced chemical vapor deposition unit that embodiment of the present invention provides
Another exploded perspective view
Detailed description of the invention
Below in conjunction with the accompanying drawing in embodiment of the present invention, the technical scheme in embodiment of the present invention is carried out clearly
Chu, it is fully described by, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole realities
Execute mode.Based on the embodiment in the present invention, those of ordinary skill in the art are institute under not making creative work premise
The every other embodiment obtained, broadly falls into the scope of protection of the invention.
Additionally, the explanation of following embodiment is with reference to additional diagram, may be used to enforcement in order to illustrate the present invention
Particular implementation.The direction term being previously mentioned in the present invention, such as, " on ", D score, "front", "rear", "left", "right",
" interior ", " outward ", " side " etc., be only the direction with reference to annexed drawings, therefore, the direction term of use be in order to more preferably, more clear
Chu ground illustrates and understands that the present invention rather than instruction or the device inferring indication or element must have specific orientation, Yi Te
Fixed azimuth configuration and operation, be therefore not considered as limiting the invention.
In describing the invention, it should be noted that unless otherwise clearly defined and limited, term " is installed ", " phase
Even ", " connection ", " be arranged on ... on " should be interpreted broadly, for example, it may be fixing connection, it is also possible to be removably to connect
Connect, or be integrally connected；Can be to be mechanically connected；Can be to be joined directly together, it is also possible to be indirectly connected to by intermediary, can
To be the connection of two element internals.For the ordinary skill in the art, above-mentioned term can be understood with concrete condition
Concrete meaning in the present invention.
Additionally, in describing the invention, except as otherwise noted, " multiple " are meant that two or more.If this
Occurring the term of " operation " in description, it refers not only to independent operation, when cannot clearly distinguish with other operation, as long as
The effect desired by this operation that can realize then is also included within this term.It addition, in this specification with "～" the numerical value model that represents
Enclose refer to using "～" before and after the scope that is included as minima and maximum of numerical value recorded.In the accompanying drawings, structure
Similar or identical unit is indicated by the same numeral.
Seeing also Fig. 1 and Fig. 2, embodiment of the present invention provides a kind of plasma enhanced chemical vapor deposition unit
100, including reaction chamber 1, upper electrode 2, bottom electrode 3 and radio frequency feedthrough 4.Set on the sidewall 11 of described reaction chamber 1
Opening valve 12, substrate 101 is put into the inside of described reaction chamber 1 or from described reaction chamber by described opening valve 12 by mechanical hand
Described substrate 101 is taken out in the inside of room 1.Described upper electrode 2 and described bottom electrode 3 are oppositely disposed at described reaction chamber 1
Internal.Described radio frequency feedthrough 4 electrically connects described upper electrode 2, for producing plasma in the inside of described reaction chamber 1
Strengthen chemical vapour deposition reaction, with shape film forming layer 102, described radio frequency on the described substrate 101 being placed on described bottom electrode 3
Between center 20 and the described opening valve 12 of input point 40 electrode 2 on described of feedthrough 4.
In the present embodiment, the input point 40 of described radio frequency feedthrough 4 is positioned at center 20 and the institute of described upper electrode 2
State between opening valve 12, namely the input point 40 of described radio frequency feedthrough 4 deviates the center 20 of described upper electrode 2 and to described
Opening valve 12 is close so that described radio frequency feedthrough 4 inputs the maximum interference point 103 of the electromagnetic wave of described upper electrode 2 substantially
Be positioned at described substrate 101 center (described radio frequency feedthrough 4 input described upper electrode 2 electromagnetic wave transmission path signal
Figure is as shown in Figure 2), the plasma distribution even density in described reaction chamber 1, deposition velocity is uniform, is formed at described base
The uniform film thickness of the described film layer 102 on plate 101, the amount of contraction of described substrate 101 is more consistent, it is possible to effectively prevent described base
Plate 101 follow-up to box technique in there is laminating dislocation, it is to avoid apply the liquid crystal display of described substrate 101 that light leak occurs,
The product yield of the most described plasma enhanced chemical vapor deposition unit 100 is high.
It should be understood that described upper electrode 2 is positioned at the top of described bottom electrode 3, described bottom electrode 3 ground connection.
Further, seeing also Fig. 1, Fig. 3 and Fig. 4, as a kind of optional embodiment, described upper electrode 2 is opened
If the multiple connecting holes 21 being intervally arranged, the plurality of connecting hole 21 is positioned at the center 20 of described upper electrode 2 and described opening valve
Between 12.Described radio frequency feedthrough 4 includes connector 41, and described connector 41 is for input radio frequency electric current.Pass through securing member
Described connector 41 is connected to the plurality of connecting hole 21 by 42.The input point 40 of described radio frequency feedthrough 4 is described connection
Part 41 and the electric coupling area of described upper electrode 2.
In the present embodiment, the plurality of connecting hole 21 forms a pitch adjusting structure so that described radio frequency feedthrough 4
Spacing between the center 20 of input point 40 and described upper electrode 2 is adjustable, described plasma enhanced chemical vapor deposition unit
100 input points 40 that can freely adjust described radio frequency feedthrough 4 according to the distribution situation of the actual thickness of described film layer 102
Position, thus improve product yield further, it is also possible to be applicable to larger range of product demand.
It should be understood that described connector 41 uses conductive material.Described electric coupling area includes but not limited to described company
The contact area of fitting 41 and described upper electrode 2 and described connecting hole 21 and the contact area of described securing member 42.Described securing member 42
Include but not limited to bolt, screw, rivet etc..
Certainly, in other embodiments, described connector 41 can include lobe, and described lobe is with the plurality of
Mortise-tenon joint is formed, to realize the electrical connection of described radio frequency feedthrough 4 and described upper electrode 2 between connecting hole 21.In this reality
Execute in mode, eliminate appended claims, saved packaging technology, reduced cost.
Preferably, between at least one connecting hole in the plurality of connecting hole 21 and the center 20 of described upper electrode 2
It is smaller than equal to 10cm.Spacing between the input point 40 and the center 20 of described upper electrode 2 of described radio frequency feedthrough 4
During less than or equal to 10cm, the thickness homogeneity of described film layer 102 is splendid, it is possible to effectively prevent because of the amount of contraction of described substrate 101
The most inconsistent and cause to box misplace, it is to avoid apply the liquid crystal display of described substrate 101 that light leak occurs.
Further, see also Fig. 1 and Fig. 3, as a kind of optional embodiment, the center 20 of described upper electrode 2
And the line between described opening valve 12 projects on electrode 2 on described and forms First Line 22.The plurality of connecting hole 21 arranges
On described First Line 22.Wherein any one connecting hole 21 that described connector 41 is connected in the plurality of connecting hole 21.
Preferably, the plurality of connecting hole 21 equidistantly arranges.
Further, see also Fig. 1 and Fig. 4, as a kind of optional embodiment, the center 20 of described upper electrode 2
And the line between described opening valve 12 projects on electrode 2 on described and forms First Line 22.The plurality of connecting hole 21 includes
First row connecting hole 211 and second row connecting hole 212.Described first row connecting hole 211 is relative with described second row connecting hole 212
Described First Line 22 symmetry arrangement.Described connector 41 is connected to one of them connecting hole in described first row connecting hole 211
21 and described second row connecting hole 212 in one of them connecting hole 21.
Preferably, the described connecting hole 21 in described first row connecting hole 211 equidistantly arranges.Now, described second row
The same equidistantly arrangement of described connecting hole 21 in connecting hole 212.
Further, as a kind of optional embodiment, the plurality of connecting hole 21 is through hole or blind hole.
Further, referring to Fig. 1, as a kind of optional embodiment, described upper electrode 2 can be a hollow structure.
Described upper electrode 2 includes the roof 23 being oppositely arranged, diapire 24, the side that is connected between described roof 23 and described diapire 24
Perisporium 25 and inlet tube 26.The input point 40 of described radio frequency feedthrough 4 is positioned at described roof 23.Described roof 23, described
Diapire 24 and described side perisporium 25 enclose and set out current-sharing chamber 27.One end of described inlet tube 26 connects described roof 23, described
The other end of inlet tube 26 extend out to the outside of described reaction chamber 1, for input material to described current-sharing chamber 27.Described diapire
24 offer the multiple equal discharge orifice 271 being intervally arranged.
Preferably, the upper wall of described reaction chamber 1 offers air inlet 13, and the lower wall of described reaction chamber 1 offers steam vent
14.Described inlet tube 26 extend out to the outside of described reaction chamber 1 by described air inlet 13.
In the present embodiment, the material of described film layer 102 enters described current-sharing chamber 27 from described inlet tube 26, then by
The plurality of equal discharge orifice 271 is dispersed to the top of the regional of described substrate 101, it is possible to increase the thickness of described film layer 102
Uniformity.
Preferably, the plurality of equal discharge orifice 271 is arranged in matrix.
Preferably, described roof 23 is conductive material.Can be arranged on described roof 23 and multiple company described previously is set
Connect hole 21.Now, the plurality of connecting hole 21 is preferably blind hole, to avoid interference the airflow field in described current-sharing chamber 27.
Certainly, in other embodiments, described upper electrode 2 can also be a solid construction.Now, described upper electrode 2
Inlet tube 26 is no longer set, the material of described film layer 102 from the described air inlet 13 of described reaction chamber 1 be directly entered described instead
Answer chamber 1 internal.
Above embodiment of the present invention is described in detail, the specific case principle to the present invention used herein
And embodiment is set forth, the explanation of embodiment of above is only intended to help to understand that the method for the present invention and core thereof are thought
Think；Simultaneously for one of ordinary skill in the art, according to the thought of the present invention, in specific embodiments and applications
All will change, in sum, this specification content should not be construed as limitation of the present invention.
Claims (10)
1. a plasma enhanced chemical vapor deposition unit, it is characterised in that including:
Reaction chamber, the sidewall of described reaction chamber sets opening valve；
Upper electrode and bottom electrode, be oppositely disposed at the inside of described reaction chamber；And
Radio frequency feedthrough, electrically connects described upper electrode, for producing plasma enhancing in the inside of described reaction chamber
Learn vapor deposition reaction, with shape film forming layer on the substrate being placed on described bottom electrode, the input point of described radio frequency feedthrough
On described between center and the described opening valve of electrode.
2. plasma enhanced chemical vapor deposition unit as claimed in claim 1, it is characterised in that described upper electrode is offered
The multiple connecting holes being intervally arranged, between center and the described opening valve of the plurality of connecting hole electrode on described, described
Radio frequency feedthrough includes connector, by securing member, described connector is connected to the plurality of connecting hole.
3. plasma enhanced chemical vapor deposition unit as claimed in claim 2, it is characterised in that the plurality of connecting hole
In at least one connecting hole and the center of described upper electrode between be smaller than equal to 10cm.
4. plasma enhanced chemical vapor deposition unit as claimed in claim 2, it is characterised in that in described upper electrode
Line between the heart and described opening valve electrode upslide shadow on described forms First Line, and the plurality of connecting hole is arranged in described
On First Line, described connector is connected to one of them connecting hole in the plurality of connecting hole.
5. plasma enhanced chemical vapor deposition unit as claimed in claim 4, it is characterised in that the plurality of connecting hole
Equidistantly arrangement.
6. plasma enhanced chemical vapor deposition unit as claimed in claim 2, it is characterised in that in described upper electrode
Line between the heart and described opening valve electrode upslide shadow on described forms First Line, and the plurality of connecting hole includes first row
Connecting hole and second row connecting hole, described first row connecting hole described First Line symmetry relative with described second row connecting hole is arranged
Cloth, described connector is connected to one of them connecting hole in described first row connecting hole and its in described second row connecting hole
In a connecting hole.
7. plasma enhanced chemical vapor deposition unit as claimed in claim 2, it is characterised in that the plurality of connecting hole
For through hole or blind hole.
8. plasma enhanced chemical vapor deposition unit as claimed in claim 1, it is characterised in that described upper electrode includes
Roof, diapire, the side perisporium being connected between described roof and described diapire and inlet tube, the described radio frequency being oppositely arranged
The input point of feedthrough is positioned at described roof, and described roof, described diapire and described side perisporium enclose and set out current-sharing chamber, institute
The one end stating inlet tube connects described roof, and the other end of described inlet tube extend out to the outside of described reaction chamber, for defeated
Entering material extremely described current-sharing chamber, described diapire offers the multiple equal discharge orifice being intervally arranged.
9. plasma enhanced chemical vapor deposition unit as claimed in claim 8, it is characterised in that described reaction chamber
Upper wall offers air inlet, and the lower wall of described reaction chamber offers steam vent, and described inlet tube extend out to institute by described air inlet
State the outside of reaction chamber.
10. plasma enhanced chemical vapor deposition unit as claimed in claim 8, it is characterised in that the plurality of current-sharing
Hole is matrix arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610834267.XA CN106245005A (en) | 2016-09-20 | 2016-09-20 | Plasma enhanced chemical vapor deposition unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610834267.XA CN106245005A (en) | 2016-09-20 | 2016-09-20 | Plasma enhanced chemical vapor deposition unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106245005A true CN106245005A (en) | 2016-12-21 |
Family
ID=57599972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610834267.XA Pending CN106245005A (en) | 2016-09-20 | 2016-09-20 | Plasma enhanced chemical vapor deposition unit |
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| Country | Link |
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| CN (1) | CN106245005A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110527986A (en) * | 2019-10-18 | 2019-12-03 | 南京华伯新材料有限公司 | A kind of PECVD thin film deposition chamber and pecvd process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020046989A1 (en) * | 1998-07-13 | 2002-04-25 | Applied Komatsu Technology, Inc. | RF matching network with distributed outputs |
| CN1648725A (en) * | 2004-01-20 | 2005-08-03 | 周星工程股份有限公司 | Substrate supporting means having wire and apparatus using the same |
| US20070187363A1 (en) * | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| CN101911840A (en) * | 2007-12-25 | 2010-12-08 | 应用材料股份有限公司 | The asymmetry RF drive that is used for the electrode of plasma chamber |
| CN202888133U (en) * | 2009-09-29 | 2013-04-17 | 应用材料公司 | Apparatus for coupling RF (Radio Frequency) power to plasma chamber |
| CN104195528A (en) * | 2014-09-05 | 2014-12-10 | 厦门大学 | High-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device |
-
2016
- 2016-09-20 CN CN201610834267.XA patent/CN106245005A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020046989A1 (en) * | 1998-07-13 | 2002-04-25 | Applied Komatsu Technology, Inc. | RF matching network with distributed outputs |
| CN1648725A (en) * | 2004-01-20 | 2005-08-03 | 周星工程股份有限公司 | Substrate supporting means having wire and apparatus using the same |
| US20070187363A1 (en) * | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| CN101911840A (en) * | 2007-12-25 | 2010-12-08 | 应用材料股份有限公司 | The asymmetry RF drive that is used for the electrode of plasma chamber |
| CN202888133U (en) * | 2009-09-29 | 2013-04-17 | 应用材料公司 | Apparatus for coupling RF (Radio Frequency) power to plasma chamber |
| CN104195528A (en) * | 2014-09-05 | 2014-12-10 | 厦门大学 | High-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110527986A (en) * | 2019-10-18 | 2019-12-03 | 南京华伯新材料有限公司 | A kind of PECVD thin film deposition chamber and pecvd process |
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Application publication date: 20161221 |