CN106245004A - 内外喷气式低压化学气相沉淀腔 - Google Patents

内外喷气式低压化学气相沉淀腔 Download PDF

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Publication number
CN106245004A
CN106245004A CN201610885383.4A CN201610885383A CN106245004A CN 106245004 A CN106245004 A CN 106245004A CN 201610885383 A CN201610885383 A CN 201610885383A CN 106245004 A CN106245004 A CN 106245004A
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Prior art keywords
stay tube
wafer
gas
guiding structure
annular chamber
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CN201610885383.4A
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Inventor
吕耀安
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WUXI HI-NANO TECHNOLOGY Co Ltd
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WUXI HI-NANO TECHNOLOGY Co Ltd
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Priority to CN201610885383.4A priority Critical patent/CN106245004A/zh
Publication of CN106245004A publication Critical patent/CN106245004A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明涉及一种内外喷气式低压化学气相沉淀腔，包括腔体，所述腔体中内置有导气结构及用于支撑晶圆的支撑结构，所述导气结构为一环形腔套，所述环形腔套的内壁安装有多根径向设置的外导气管，所述支撑结构包括一支撑管，所述支撑管轴向设置于所述环形腔套中，所述支撑管的周壁上借助卡夹夹持晶圆，支撑管中轴承设有内导气管，所述内导气管与所述支撑管之间设有多根导管，所述导管的出气端置于相邻的卡夹之间。本发明采用环状形的导气结构及置于该导气结构中的支撑管，支撑管采用放射方式固定晶圆，大大降低晶圆的支撑体积，减小整个沉淀腔的体积，并采用内外导气结构，提高反应气体与晶圆的接触均匀度。

Description

内外喷气式低压化学气相沉淀腔
技术领域
本发明涉及半导体技术领域，特别涉及晶圆的化学气相沉淀腔。
背景技术
低压化学气相沉淀是指将沉淀腔中抽成低压状态，将反应气体置入沉淀腔中，反应气体扩散至沉淀腔中的晶圆表面，在晶圆表面附近的反应区发生反应形成薄膜。现有的低压化学沉淀腔的结构设计不合理，反应气体不能均匀的扩散至晶圆表面，导致形成的薄膜厚度不均匀。
发明内容
针对现有技术存在的上述问题，申请人进行研究及改进，提供一种内外喷气式低压化学气相沉淀腔。
为了解决上述问题，本发明采用如下方案：
一种内外喷气式低压化学气相沉淀腔，包括腔体，所述腔体中内置有导气结构及用于支撑晶圆的支撑结构，所述导气结构为一环形腔套，所述环形腔套的内壁安装有多根径向设置的外导气管，所述支撑结构包括一支撑管，所述支撑管轴向设置于所述环形腔套中，所述支撑管的周壁上借助卡夹夹持晶圆，支撑管中轴承设有内导气管，所述内导气管与所述支撑管之间设有多根导管，所述导管的出气端置于相邻的卡夹之间。
本发明的技术效果在于：
本发明采用环状形的导气结构及置于该导气结构中的支撑管，支撑管采用放射方式固定晶圆，大大降低晶圆的支撑体积，减小整个沉淀腔的体积，并采用内外导气结构，提高反应气体与晶圆的接触均匀度。
附图说明
图1为本发明的结构示意图。
图中：1、腔体；2、支撑结构；3、导气结构；4、外导气管；5、卡夹；6、晶圆；7、内导气管；8、导管。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步说明。
如图1所示，本实施例的内外喷气式低压化学气相沉淀腔，包括腔体1，腔体1中内置有导气结构3及用于支撑晶圆的支撑结构2，导气结构3为一环形腔套，环形腔套的内壁安装有多根径向设置的外导气管4，支撑结构2包括一支撑管，支撑管轴向设置于环形腔套中，支撑管的周壁上借助卡夹5夹持晶圆6，支撑管中轴承设有内导气管7，内导气管7与支撑管之间设有多根导管8，导管8的出气端置于相邻的卡夹5之间。
使用时，将反应气体通入从环形腔套及内导气管7中导入至腔体1中，反应气体从外导气管4及导管8中导出，即从晶圆6的内外端导入至其表面，提高导入效率及均匀度。
以上所举实施例为本发明的较佳实施方式，仅用来方便说明本发明，并非对本发明作任何形式上的限制，任何所属技术领域中具有通常知识者，若在不脱离本发明所提技术特征的范围内，利用本发明所揭示技术内容所作出局部改动或修饰的等效实施例，并且未脱离本发明的技术特征内容，均仍属于本发明技术特征的范围内。

Claims (1)

1.一种内外喷气式低压化学气相沉淀腔，包括腔体(1)，所述腔体(1)中内置有导气结构(3)及用于支撑晶圆的支撑结构(2)，其特征在于：所述导气结构(3)为一环形腔套，所述环形腔套的内壁安装有多根径向设置的外导气管(4)，所述支撑结构(2)包括一支撑管，所述支撑管轴向设置于所述环形腔套中，所述支撑管的周壁上借助卡夹(5)夹持晶圆(6)，支撑管中轴承设有内导气管(7)，所述内导气管(7)与所述支撑管之间设有多根导管(8)，所述导管(8)的出气端置于相邻的卡夹(5)之间。
CN201610885383.4A 2016-10-10 2016-10-10 内外喷气式低压化学气相沉淀腔 Pending CN106245004A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6090894A (ja) * 1983-10-20 1985-05-22 Fujitsu Ltd 気相成長装置
CN201437552U (zh) * 2009-06-12 2010-04-14 中芯国际集成电路制造(上海)有限公司 进气***
CN102330072A (zh) * 2010-07-12 2012-01-25 三星Led株式会社 化学气相沉积设备及使用其形成半导体外延薄膜的方法
CN102576669A (zh) * 2009-07-16 2012-07-11 圆益Ips股份有限公司 半导体制造装置
CN102653883A (zh) * 2011-02-28 2012-09-05 株式会社日立国际电气 衬底处理装置及衬底的制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6090894A (ja) * 1983-10-20 1985-05-22 Fujitsu Ltd 気相成長装置
CN201437552U (zh) * 2009-06-12 2010-04-14 中芯国际集成电路制造(上海)有限公司 进气***
CN102576669A (zh) * 2009-07-16 2012-07-11 圆益Ips股份有限公司 半导体制造装置
CN102330072A (zh) * 2010-07-12 2012-01-25 三星Led株式会社 化学气相沉积设备及使用其形成半导体外延薄膜的方法
CN102653883A (zh) * 2011-02-28 2012-09-05 株式会社日立国际电气 衬底处理装置及衬底的制造方法

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