CN106207014B - A kind of preparation method of organic luminescent device - Google Patents
A kind of preparation method of organic luminescent device Download PDFInfo
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- CN106207014B CN106207014B CN201610692105.7A CN201610692105A CN106207014B CN 106207014 B CN106207014 B CN 106207014B CN 201610692105 A CN201610692105 A CN 201610692105A CN 106207014 B CN106207014 B CN 106207014B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Abstract
A kind of preparation method of organic luminescent device, preparation process are as follows：Vacuumized being placed in after Substrate treatment in vacuum chamber；It is deposited on substrate using the method for double source evaporation by MoO3, NPB composition mixture A, formed p-type functional layer；The electronic barrier layer formed by TAPC or TCTA is deposited again；Again using the method for double source evaporation, using TPBi as material of main part, PO 01 or Ir (MDQ)2(acac) organic luminous layer is prepared as dyestuff；TPBi is deposited again and forms electron transfer layer；The mixture B being made up of again using the method evaporation of double source evaporation Li and TPBi, forms n-type functional layer；It is deposited again using the method for double source evaporation by MoO3, NPB composition mixture C, formed p ' type functional layers；Vacuum evaporation Al layers again, negative electrode is formed, produces organic luminescent device.Organic luminescent device efficiency high that the present invention is prepared, voltage are low, long working life.
Description
Technical field
The invention belongs to field of semiconductor devices, more particularly to a kind of preparation method of organic luminescent device.
Background technology
Organic electroluminescent LED（OLED）It is considered as " illusion display ".At present, OLED has been successfully applied to intelligence
The electronic products such as energy mobile phone, wrist-watch and tablet personal computer.
OLED is a kind of selfluminous element, by clipping functional layer between a pair of electrodes and applying voltage, from electric transmission
Layer injected electrons and hole transmission layer injected holes are compounded to form exciton in luminescent layer, and the exciton is when returning to ground state
Send visible ray.In order to lift the performance of OLED, OLED, which experienced, to light to delayed fluorescence and lights from fluorescence radiation, phosphorescence
Evolutionary process.OLED device can reach very high efficiency at present.Want further lifting OLED efficiency and
Practicality is, it is necessary to which OLED has lower driving voltage.The life-span of OLED device need further to improve simultaneously.Life-span
Short slab governs OLED industrialization process.
It can be adulterated at present by the p-type of hole transmission layer（For example adulterate MoO in hole mobile material NPB3Or
F4-TCNQ）, reach the purpose for improving hole transport performance and Hole injection capacity.Device drive voltage after doping has
Very big reduction.But while hole injection transmittability is strengthened, the unbalanced problem of both hole and electron can be brought so that
OLED can not play maximum performance.
If we introduce n-type doping in electron transfer layer simultaneously（Such as in electron transport material TPBi adulterate Li or
Person CsCO3）, electric transmission and injectability can be improved.Simultaneously have p-type and n-type doping device drive voltage have into
The reduction of one step, and exciton is compound more balances, and device efficiency is further lifted.
Ratio very little is adulterated yet with the object of n-type doping, it is difficult to control its ratio for a long time in the industrial production, and
And the Dopant Li or CsCO used3It is very sensitive to the aqueous vapor that is passed through from Al electrodes, easily cause the luminescence degradation of device.
Want solve these problems, layer protective layer can be added on n-type electron injecting layer, by unstable doping
Material Li or CsCO3Opened with the isolation of Al electrodes, while do not influence the injection and transmission of electronics also.The selection of this protective layer just becomes
Obtain very crucial.
The content of the invention
The technical problem of solution：For existing organic phosphorescent devices short life, efficiency is low the shortcomings that, the present invention provide one
The preparation method of kind organic luminescent device, the organic luminescent device efficiency high being prepared with the preparation method, voltage are low, work
Long lifespan.
Technical scheme：A kind of preparation method of organic luminescent device, the preparation process of this method are as follows：
The first step：After transparent electro-conductive glass substrate is ultrasonically treated in cleaning agent, cleaned, then be baked to dry
It is dry, then handled with uviol lamp and ozone, then treated transparent electro-conductive glass substrate is placed in vacuum chamber, take out
Vacuum is to 3.0 × 10-4~4.0 × 10-4Pa；
Second step：Possessed on transparent electro-conductive glass substrate using the method evaporation mixture A of double source evaporation, formation
Hole is injected and the p-type functional layer of transmission performance, wherein mixture A are made up of dopant and material of main part NPB, and dopant is
MoO3Or F4-TCNQ, evaporation rate are 0.3/s, coating film thickness is 45 nm；
3rd step：The electronic barrier layer formed by TAPC or TCTA is deposited in p-type functional layer, wherein evaporation rate is 2
/ s, coating film thickness are 14 nm；
4th step：Using the method for double source evaporation on electronic barrier layer, using TPBi as material of main part, PO-01 or
Ir(MDQ)2(acac) organic luminous layer is prepared as dyestuff, wherein evaporation rate is 2/s, and coating film thickness is 15 nm；
5th step：TPBi is deposited on organic luminous layer, forms the electronics acted on hole barrier and electric transmission and passes
Defeated layer, wherein evaporation rate are 2/s, and coating film thickness is 15 nm；
6th step：On the electron transport layer using double source evaporation method evaporation mixture B, formation possess electron injection with
And the n-type functional layer of transmission performance, wherein mixture B are made up of Dopant Li and material of main part TPBi, evaporation rate be 2/
S, coating film thickness are 10 nm；
7th step：In n-type functional layer using double source evaporation method evaporation mixture C, formation possess hole injection with
And p ' the type functional layers of transmission performance, wherein compound C are made up of dopant and material of main part NPB, dopant MoO3Or F4-
TCNQ, evaporation rate are 2/s, and coating film thickness is 35 nm；
8th step：The vacuum evaporation Al layers in p ' type functional layers, negative electrode is formed, produces organic luminescent device, wherein Al layers
Thickness be 100nm.
The step of being cleaned in the first step described above first use deionized water rinsing, then use successively deionized water, acetone,
Ethanol cleans three times repeatedly.
Vacuum in vacuum chamber is evacuated to 3.0 × 10 in the first step described above-4Pa。
Using NPB as material of main part, MoO in second step described above3Or F4-TCNQ prepares p-type work(as dopant
During ergosphere, MoO3Doping concentration be 20 vol.%；F4-TCNQ doping concentration is 3 vol.%.
Using TPBi as material of main part in the 4th step described above, when PO-01 prepares organic luminous layer as dyestuff,
PO-01 doping concentration is 6 vol.%.
Using TPBi as material of main part, Ir (MDQ) in the 4th step described above2(acac) organic hair is prepared as dyestuff
During photosphere, Ir (MDQ)2(acac) doping concentration is 4 vol.%.
Using TPBi as material of main part, when Li prepares n-type functional layer as dopant, Li's in the 6th step described above
Doping concentration is 1 vol.%.
Using NPB as material of main part, MoO described in the 7th step described above3Or F4-TCNQ prepares p ' as dopant
During type functional layer, MoO3Doping concentration be 20 vol.%；F4-TCNQ doping concentration is 3 vol.%.
Beneficial effect：A kind of preparation method of organic luminescent device provided by the invention, has the advantages that：
1. the present invention preparation method be easy to make, it is reproducible；
2. the p-type being prepared in the preparation method of the present invention, n-type, p ' types doped layer have very high electric charge transmission and
Injection efficiency, instead of the undoped charge transport layer of usually used injection transmission performance difference so that the organic hair being prepared
The efficiency of optical device improves a lot, and voltage significantly reduces；
3. the present invention passes through the injection and transmission in introducing p-type, n-type, p ' types doped layer regulation and control electronics so that the electricity of device
Sub- hole-recombination more balances so that the efficiency for the organic luminescent device being prepared improves a lot；
4. the present invention between unstable n-type doped layer and Al electrodes by introducing stable p ' type doped layers, effectively
Ground completely cuts off steam and unstable n-type dopant material so that the life-span for the organic luminescent device being prepared improves a lot.
Brief description of the drawings
Fig. 1 is the yellow phosphorescence organic luminescent device that embodiment 1 is prepared using P-I-N-P structures（Device B1）With it is right
The yellow phosphorescence organic luminescent device being prepared in ratio 1 using traditional P-I-N structures（Device A1）Glow current efficiency
Performance comparison figure, it can be seen that in 1000 cd/m2Device B1 current efficiency is 47.6 cd/A under brightness, and device A1
Current efficiency be 39.7 cd/A, therefore the device B1 operating efficiencies with P-I-N-P structures that use of the present invention are higher.
Fig. 2 is the yellow phosphorescence organic luminescent device that embodiment 1 is prepared using P-I-N-P structures（Device B1）With it is right
The yellow phosphorescence organic luminescent device being prepared in ratio 1 using traditional P-I-N structures（Device A1）Voltage x current performance
Comparison diagram, it can be seen that it can be seen that in 1000 cd/m2Device B1 driving voltage is 4.08 V under brightness, and device
Part A1 driving voltage is 4.51 V, therefore the device B1 driving voltages with P-I-N-P structures that the present invention uses are lower.
Fig. 3 is the yellow phosphorescence organic luminescent device that embodiment 1 is prepared using P-I-N-P structures（Device B1）With it is right
The yellow phosphorescence organic luminescent device being prepared in ratio 1 using traditional P-I-N structures（Device A1）Electroluminescent spectrum
Comparison diagram, it can be seen that in 1000 cd/m2Device B1 has and device A1 identical luminescent spectrums under brightness, therefore this hair
The bright device B1 using P-I-N-P structures can ensure to obtain higher operating efficiency and lower on the premise of spectrum is not changed
Operating voltage.
Fig. 4 is the yellow phosphorescence organic luminescent device that embodiment 1 is prepared using P-I-N-P structures（Device B1）With it is right
The yellow phosphorescence organic luminescent device being prepared in ratio 1 using traditional P-I-N structures（Device A1）Life span comparison figure, from
Understood in figure, under the premise of starting brightness identical（1000 cd/m2）, device B1 life-span is 396.7 hours, and device A1
Life-span be 232.4 hours, therefore the yellow phosphorescence organic luminescent device being prepared using P-I-N-P structures（Device B1）Tool
There is the yellow phosphorescence organic luminescent device than being prepared using traditional P-I-N structures（Device A1）The longer life-span.
Fig. 5 is comparative example 2（Device A2）, embodiment 2（Device B2）, embodiment 3（Device B3）With embodiment 4（Device B4）
Driving voltage current vs figure（Wherein device A2 is that P-I-N structure devices B2-B4 is P-I-N-P structures）, it can be seen that
Under identical current density, driving voltage size is B4<A2<B3<B2.Illustrate with n-type doping layer to be connected in P-I-N-P structures
The p-type doped layer thickness connect is critically important, and 35 nm are optimal thickness.
Embodiment
The MoO used in following examples3、F4-TCNQ、NPB、TAPC、TCTA、PO-01、Ir(ppy)2(acac)、
TPBi、Li、CsCO3It is purchased from Lumtec companies.
Embodiment 1
Using P-I-N-P structures, organic luminescent device is prepared using yellow phosphorescence dyestuff PO-01（Device B1）, device junction
Structure is：ITO/NPB:MoO3(20 vol.%, 45 nm)/TCTA(14 nm)/TPBi：PO-01(6 vol.% 15 nm)/TPBi
(15 nm)/TPBi:Li(1 vol.%, 10 nm)/NPB:MoO3(20 vol.%, 35 nm)/Al(100 nm)。
The preparation method of organic luminescent device, the preparation process of this method are as follows：
The first step：After transparent electro-conductive glass substrate is ultrasonically treated in cleaning agent, first with deionized water rinsing, then
Cleaned three times repeatedly with deionized water, acetone, ethanol successively, then be baked to drying, then handled with uviol lamp and ozone,
Treated transparent electro-conductive glass substrate is placed in vacuum chamber again, is evacuated to 3.0 × 10-4Pa；
Second step：Possessed on transparent electro-conductive glass substrate using the method evaporation mixture A of double source evaporation, formation
Hole injects and the p-type functional layer of transmission performance, and wherein mixture A is by dopant MoO3Formed with material of main part NPB, doping
Concentration is 20 vol.%, and evaporation rate is 0.3/s, and coating film thickness is 45 nm；
3rd step：TCTA is deposited in p-type functional layer and forms electronic barrier layer, wherein evaporation rate is 2/s, plates thickness
Spend for 14 nm；
4th step：Using the method for double source evaporation on electronic barrier layer, using TPBi as material of main part, PO-01 conducts
Dyestuff prepares organic luminous layer, and wherein evaporation rate is 2/s, and doping concentration is 6 vol.%, and coating film thickness is 15 nm；
5th step：TPBi is deposited on organic luminous layer, forms the electronics acted on hole barrier and electric transmission and passes
Defeated layer, wherein evaporation rate are 2/s, and coating film thickness is 15 nm；
6th step：On the electron transport layer using double source evaporation method evaporation mixture B, formation possess electron injection with
And the n-type functional layer of transmission performance, wherein mixture B are made up of Dopant Li and material of main part TPBi, doping concentration 1
Vol.%, evaporation rate are 2/s, and coating film thickness is 10 nm；
7th step：In n-type functional layer using double source evaporation method evaporation mixture C, formation possess hole injection with
And p ' the type functional layers of transmission performance, wherein compound C is by dopant MoO3Formed with material of main part NPB, doping concentration 20
Vol.%, evaporation rate are 2/s, and coating film thickness is 35 nm；
8th step：The vacuum evaporation Al layers in p ' type functional layers, negative electrode is formed, produces organic luminescent device, wherein Al layers
Thickness be 100 nm.
Embodiment 2
Using P-I-N-P structures, organic luminescent device is prepared without using dyestuff（Device B2）, device architecture is：ITO/
NPB:MoO3(20 vol.%, 45 nm)/TCTA(14 nm)/TPBi(60 nm)/TPBi:Li(1 vol.%, 10 nm)/
NPB:MoO3(20 vol.%, 5 nm)/Al(100 nm)。
The preparation method of organic luminescent device, the preparation process of this method are as follows：
The first step：After transparent electro-conductive glass substrate is ultrasonically treated in cleaning agent, first with deionized water rinsing, then
Cleaned three times repeatedly with deionized water, acetone, ethanol successively, then be baked to drying, then handled with uviol lamp and ozone,
Treated transparent electro-conductive glass substrate is placed in vacuum chamber again, is evacuated to 3.0 × 10-4Pa；
Second step：Possessed on transparent electro-conductive glass substrate using the method evaporation mixture A of double source evaporation, formation
Hole injects and the p-type functional layer of transmission performance, and wherein mixture A is by dopant MoO3Formed with material of main part NPB, doping
Concentration is 20 vol.%, and evaporation rate is 0.3/s, and coating film thickness is 45 nm；
3rd step：TCTA is deposited in p-type functional layer and forms electronic barrier layer, wherein evaporation rate is 2/s, plates thickness
Spend for 14 nm；
4th step：TPBi is deposited on electronic barrier layer, forms the electronics acted on hole barrier and electric transmission and passes
Defeated layer, wherein evaporation rate are 2/s, and coating film thickness is 60 nm；
5th step：On the electron transport layer using double source evaporation method evaporation mixture B, formation possess electron injection with
And the n-type functional layer of transmission performance, wherein mixture B are made up of Dopant Li and material of main part TPBi, doping concentration 1
Vol.%, evaporation rate are 2/s, and coating film thickness is 10 nm；
6th step：In n-type functional layer using double source evaporation method evaporation mixture C, formation possess hole injection with
And p ' the type functional layers of transmission performance, wherein compound C is by dopant MoO3Formed with material of main part NPB, doping concentration 20
Vol.%, evaporation rate are 2/s, and coating film thickness is 5 nm；
7th step：The vacuum evaporation Al layers in p ' type functional layers, negative electrode is formed, produces organic luminescent device, wherein Al layers
Thickness be 100 nm.
Embodiment 3
Using P-I-N-P structures, organic assembly is prepared without using dyestuff（Device B3）, device architecture is：ITO/NPB:
MoO3(20 vol.%, 45 nm)/TCTA(14 nm)/TPBi(50 nm)/TPBi:Li(1 vol.%, 10 nm)/NPB:MoO3
(20 vol.%, 15 nm)/Al(100 nm)。
The preparation process of embodiment 3 is same as Example 2, and difference is：Coating film thickness in 4th step is 50nm；6th
Coating film thickness in step is 15nm.
Embodiment 4
Using P-I-N-P structures, organic assembly is prepared without using dyestuff（Device B2）, device architecture is：ITO/NPB:
MoO3(20 vol.%, 45 nm)/TCTA(14 nm)/TPBi(30 nm)/TPBi:Li(1 vol.%, 10 nm)/NPB:MoO3
(20 vol.%, 35 nm)/Al(100 nm)。
The preparation process of embodiment 4 is same as Example 2, and difference is：Coating film thickness in 4th step is 30nm；6th
Coating film thickness in step is 35nm.
Comparative example 1
Using P-I-N structures, organic luminescent device is prepared using yellow phosphorescence dyestuff PO-01（Device A1）, device architecture
For：ITO/NPB:MoO3(20 vol.%, 45 nm)/TCTA(14 nm)/TPBi：PO-01(6 vol.% 15 nm)/TPBi
(50 nm)/TPBi:Li(1 vol.%, 10 nm)/Al(100 nm)。
The preparation method of organic luminescent device, the preparation process of this method are as follows：
The first step：After transparent electro-conductive glass substrate is ultrasonically treated in cleaning agent, first with deionized water rinsing, then
Cleaned three times repeatedly with deionized water, acetone, ethanol successively, then be baked to drying, then handled with uviol lamp and ozone,
Treated transparent electro-conductive glass substrate is placed in vacuum chamber again, is evacuated to 3.0 × 10-4Pa；
Second step：Possessed on transparent electro-conductive glass substrate using the method evaporation mixture A of double source evaporation, formation
Hole injects and the p-type functional layer of transmission performance, and wherein mixture A is by dopant MoO3Formed with material of main part NPB, doping
Concentration is 20 vol.%, and evaporation rate is 0.3/s, and coating film thickness is 45 nm；
3rd step：TCTA is deposited in p-type functional layer and forms electronic barrier layer, wherein evaporation rate is 2/s, plates thickness
Spend for 14 nm；
4th step：Using the method for double source evaporation on electronic barrier layer, using TPBi as material of main part, PO-01 conducts
Dyestuff prepares organic luminous layer, and wherein evaporation rate is 2/s, and doping concentration is 6 vol.%, and coating film thickness is 15 nm；
5th step：TPBi is deposited on organic luminous layer, forms the electronics acted on hole barrier and electric transmission and passes
Defeated layer, wherein evaporation rate are 2/s, and coating film thickness is 50 nm；
6th step：On the electron transport layer using double source evaporation method evaporation mixture B, formation possess electron injection with
And the n-type functional layer of transmission performance, wherein mixture B are made up of Dopant Li and material of main part TPBi, doping concentration 1
Vol.%, evaporation rate are 2/s, and coating film thickness is 10 nm；
7th step：The vacuum evaporation Al layers in n-type functional layer, negative electrode is formed, produces organic luminescent device, wherein Al layers
Thickness is 100 nm.
Comparative example 2
Using P-I-N structures, organic assembly is prepared without using dyestuff（Device A2）, device architecture is：ITO/NPB:MoO3
(20 vol.%, 45 nm)/TCTA(14 nm)/ TPBi(65 nm)/TPBi:Li(1 vol.%, 10 nm)/Al(100
nm)。
The preparation method of organic luminescent device, the preparation process of this method are as follows：
The first step：After transparent electro-conductive glass substrate is ultrasonically treated in cleaning agent, first with deionized water rinsing, then
Cleaned three times repeatedly with deionized water, acetone, ethanol successively, then be baked to drying, then handled with uviol lamp and ozone,
Treated transparent electro-conductive glass substrate is placed in vacuum chamber again, is evacuated to 3.0 × 10-4Pa；
Second step：Possessed on transparent electro-conductive glass substrate using the method evaporation mixture A of double source evaporation, formation
Hole injects and the p-type functional layer of transmission performance, and wherein mixture A is by dopant MoO3Formed with material of main part NPB, doping
Concentration is 20 vol.%, and evaporation rate is 0.3/s, and coating film thickness is 45 nm；
3rd step：TCTA is deposited in p-type functional layer and forms electronic barrier layer, wherein evaporation rate is 2/s, plates thickness
Spend for 14 nm；
4th step：TPBi is deposited on electronic barrier layer, forms the electronics acted on hole barrier and electric transmission and passes
Defeated layer, wherein evaporation rate are 2/s, coating film thickness 65nm；
5th step：On the electron transport layer using double source evaporation method evaporation mixture B, formation possess electron injection with
And the n-type functional layer of transmission performance, wherein mixture B are made up of Dopant Li and material of main part TPBi, doping concentration 1
Vol.%, evaporation rate are 2/s, and coating film thickness is 10 nm；
6th step：In n-type functional layer overhead evaporating Al layer, negative electrode is formed, produces the thickness of organic luminescent device, wherein Al layers
Spend for 100 nm.
To embodiment 1（Device B1）With comparative example 1（Device A1）The performance for the organic phosphorescent devices being prepared is examined
Survey, obtained testing result such as table 1 below：
Table 1
| Device | Voltage (V)a) | Power efficiency (lm/W)b) | Current efficiency (cd/A)b) | External quantum efficiency (%)b) | Life-span (h) |
| Comparative example 1- devices A1-P-I-N-P | 4.51 | 36.0, 27.5 | 39.9, 39.7 | 12.3,12.2 | 232.4 |
| Embodiment 1- devices B1-P-I-N | 4.08 | 46.3, 36.7 | 48.5, 47.6 | 14.7, 14.4 | 396.7 |
a)Represent in 1000 cd/m2Driving voltage under brightness；b)Represent peak efficiency and in 1000 cd/m2Under brightness
Efficiency.
Claims (8)
1. a kind of preparation method of organic luminescent device, it is characterised in that the preparation process of this method is as follows：
The first step：After transparent electro-conductive glass substrate is ultrasonically treated in cleaning agent, cleaned, then be baked to drying, so
Handled afterwards with uviol lamp and ozone, then treated transparent electro-conductive glass substrate is placed in vacuum chamber, be evacuated to
3.0×10-4~4.0 × 10-4Pa；
Second step：Possesses hole using the method evaporation mixture A of double source evaporation, formation on transparent electro-conductive glass substrate
Injection and the p-type functional layer of transmission performance, wherein mixture A are made up of dopant and material of main part NPB, dopant MoO3
Or F4-TCNQ, evaporation rate are 0.3/s, coating film thickness is 45 nm；
3rd step：The electronic barrier layer formed by TAPC or TCTA is deposited in p-type functional layer, wherein evaporation rate is 2/s,
Coating film thickness is 14 nm；
4th step：Using the method for double source evaporation on electronic barrier layer, using TPBi as material of main part, PO-01 or Ir
(MDQ)2(acac) organic luminous layer is prepared as dyestuff, wherein evaporation rate is 2/s, and coating film thickness is 15 nm；
5th step：TPBi is deposited on organic luminous layer, forms the electron transfer layer acted on hole barrier and electric transmission,
Wherein evaporation rate is 2/s, and coating film thickness is 15 nm；
6th step：Possess electron injection and biography using the method evaporation mixture B of double source evaporation, formation on the electron transport layer
The n-type functional layer of defeated performance, wherein mixture B are made up of Dopant Li and material of main part TPBi, and evaporation rate is 2/s, plating
Film thickness is 10 nm；
7th step：Possess hole injection using the method evaporation mixture C of double source evaporation, formation in n-type functional layer and pass
P ' the type functional layers of defeated performance, wherein compound C are made up of dopant and material of main part NPB, dopant MoO3Or F4-
TCNQ, evaporation rate are 2/s, and coating film thickness is 35 nm；
8th step：The vacuum evaporation Al layers in p ' type functional layers, negative electrode is formed, produce the thickness of organic luminescent device, wherein Al layers
Spend for 100nm.
A kind of 2. preparation method of organic luminescent device according to claim 1, it is characterised in that：It is clear in the first step
The step of washing is first to use deionized water rinsing, then is cleaned repeatedly three times with deionized water, acetone, ethanol successively.
A kind of 3. preparation method of organic luminescent device according to claim 1, it is characterised in that：Will in the first step
Vacuum in vacuum chamber is evacuated to 3.0 × 10-4Pa。
A kind of 4. preparation method of organic luminescent device according to claim 1, it is characterised in that：Will in the second step
NPB is as material of main part, MoO3Or F4-TCNQ as dopant prepare p-type functional layer when, MoO3Doping concentration be 20
vol.%；F4-TCNQ doping concentration is 3 vol.%.
A kind of 5. preparation method of organic luminescent device according to claim 1, it is characterised in that：Will in 4th step
TPBi is as material of main part, and when PO-01 prepares organic luminous layer as dyestuff, PO-01 doping concentration is 6 vol.%.
A kind of 6. preparation method of organic luminescent device according to claim 1, it is characterised in that：Will in 4th step
TPBi is as material of main part, Ir (MDQ)2(acac) when preparing organic luminous layer as dyestuff, Ir (MDQ)2(acac) doping is dense
Spend for 4 vol.%.
A kind of 7. preparation method of organic luminescent device according to claim 1, it is characterised in that：Will in 6th step
TPBi is as material of main part, and when Li prepares n-type functional layer as dopant, Li doping concentration is 1 vol.%.
A kind of 8. preparation method of organic luminescent device according to claim 1, it is characterised in that：Institute in 7th step
State using NPB as material of main part, MoO3Or F4-TCNQ as dopant prepare p ' type functional layers when, MoO3Doping concentration be 20
vol.%；F4-TCNQ doping concentration is 3 vol.%.
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| CN102916132A (en) * | 2011-08-05 | 2013-02-06 | 海洋王照明科技股份有限公司 | White-light organic electroluminescence device and preparation method thereof |
| TW201537802A (en) * | 2014-03-26 | 2015-10-01 | Innolux Corp | Organic light emitting diode and display panel using the same |
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