CN106206885A - A kind of full-inorganic QLED and preparation method thereof - Google Patents
A kind of full-inorganic QLED and preparation method thereof Download PDFInfo
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- CN106206885A CN106206885A CN201610863081.7A CN201610863081A CN106206885A CN 106206885 A CN106206885 A CN 106206885A CN 201610863081 A CN201610863081 A CN 201610863081A CN 106206885 A CN106206885 A CN 106206885A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
Abstract
Open a kind of full-inorganic QLED of the present invention and preparation method thereof, the N-type semiconductor including substrate, being deposited on substrate, the quantum dot being deposited on the step of N-type semiconductor both sides and N-type electrode, the P-type semiconductor being sequentially deposited on quantum dot and P-type electrode；Described N-type semiconductor is the one in n GeAs, n GeSb, n SiAs, n SiSb；Described P-type semiconductor is the one in p GeAs, p GeSb, p SiAs, p SiSb.Utilizing the above-mentioned semi-conducting material of the present invention to compare semiconductor structure materials electron mobility based on nitrogenous gallium class with hole transmission layer as the electronics of QLED device higher, charge transport rate is higher, and then the effective recombination rate improving electron hole；And utilize this device architecture simple to prepare full-inorganic QLED not only preparation method, and the life-span of device can be effectively improved.
Description
Technical field
The present invention relates to light emitting diode with quantum dots field, particularly relate to a kind of full-inorganic QLED and preparation method thereof.
Background technology
Light emitting diode with quantum dots (QLED) is expected to become the main flow of novel Display Technique of future generation, due to its device efficiency
The features such as height, high color purity, preparation cost are low.
The subject matter that light emitting diode with quantum dots (QLED) faces at present is can not to meet display in life-span of device to want
Ask, especially blue-light device；Its life-span relatively low principal element is that life-span of quantum dot itself is relatively low, the polymer hole of device
The aobvious acidity of transport layer is caused.Preparing the quantum dot of good stability simultaneously, in order to be further noted that the life-span of QLED device
The life-span of device can be effectively increased by the hole transmission layer utilizing metal-oxide to replace device, but device after replacing
Part inefficient.
Therefore developing effective full-inorganic QLED is also a great research topic, based on nitride such as GaN luminescence two
Pipe field, pole has a lot of full-inorganic device architecture highly to use for reference, as partly led based on the N-type in gallium nitride (GaN) device architecture
Body is similar to the electron transfer layer in the middle of QLED device, and P-type semiconductor is similar to the hole transmission layer in QLED device, well layer class
Being similar to the quantum dot light emitting layer of QLED device, the electric charge transmission mechanism of two kinds of light emitting diodes is identical, but nitrogenous gallium
The electron mobility of semi-conducting material is relatively low, thus causes full-inorganic QLED inefficient.
Therefore, prior art has yet to be improved and developed.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of full-inorganic QLED and preparation side thereof
Method, it is intended to the electron mobility solving existing nitrogenous gallium semi-conducting material is relatively low, the inefficient problem of full-inorganic QLED.
Technical scheme is as follows:
A kind of full-inorganic QLED, wherein, the N-type semiconductor that including substrate, is deposited on substrate, is deposited on N-type semiconductor
Quantum dot on the step of both sides and N-type electrode, the P-type semiconductor being sequentially deposited on quantum dot and P-type electrode；
Described N-type semiconductor is the one in n-GeAs, n-GeSb, n-SiAs, n-SiSb；
Described P-type semiconductor is the one in p-GeAs, p-GeSb, p-SiAs, p-SiSb.
Described full-inorganic QLED, wherein, described substrate is rigidity substrate or flexible substrate.
Described full-inorganic QLED, wherein, described rigidity substrate is in red packet stone, spinelle, silicon dioxide, glass
Kind.
Described full-inorganic QLED, wherein, described flexible substrate is polyethylene film, polypropylene screen, polystyrene film, poly-right
PET film, polyethylene naphthalate film, polyimide film, polycarbonate membrane, polychloroethylene film, poly-
One in vinyl alcohol film.
Described full-inorganic QLED, wherein, described quantum dot is core-shell quanta dots.
Described full-inorganic QLED, wherein, the core of described core-shell quanta dots is CdS, CdTe, CdSe, ZnSe, ZnTe,
One or more in PbS, PbSe, PbSeS, InP, GaP, CuInS, CuGaS.
Described full-inorganic QLED, wherein, the shell of described core-shell quanta dots is one or more in ZnS, ZnSe, CdS.
Described full-inorganic QLED, wherein, described N-type electrode is Al, Ti/Al, LiF/Al, Ca, Ba, Ca/Al, LiF/
Ag、Ca/Ag、BaF2、BaF2/Al、BaF2/Ag、BaF2/Ca/Al、BaF2/Ca、Ag、Mg、CsF/Al、CsCO3One in/Al
Or it is multiple.
Described full-inorganic QLED, wherein, described P-type electrode be indium tin oxide, fluorine mix stannum oxide, indium-zinc oxide,
Aluminum mixes zinc oxide, gallium mixes zinc oxide, cadmium mixes zinc oxide, copper indium oxide, stannum oxide, zirconium oxide, Graphene, CNT, nickel,
One or more in gold, platinum, palladium.
A kind of preparation method of arbitrary described full-inorganic QLED, wherein, including step:
A, prepare a substrate；
B, on substrate deposited n-type quasiconductor；
C, on the step of N-type semiconductor both sides, deposit quantum dot and N-type electrode respectively；
D, it is sequentially depositing P-type semiconductor and P-type electrode over the qds, obtains full-inorganic QLED；
Described N-type semiconductor is the one in n-GeAs, n-GeSb, n-SiAs, n-SiSb；
Described P-type semiconductor is the one in p-GeAs, p-GeSb, p-SiAs, p-SiSb.
Beneficial effect: the present invention utilizes above-mentioned semi-conducting material to compare base as the electronics of QLED device with hole transmission layer
Higher in the semiconductor structure materials electron mobility of nitrogenous gallium class, charge transport rate is higher, and then effective raising electronics is empty
Cave.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention a kind of full-inorganic QLED preferred embodiment.
Fig. 2 is the flow chart of the preparation method preferred embodiment of a kind of full-inorganic QLED of the present invention.
Detailed description of the invention
The present invention provides a kind of full-inorganic QLED and preparation method thereof, for making the purpose of the present invention, technical scheme and effect
Clearer, clear and definite, the present invention is described in more detail below.Only should be appreciated that specific embodiment described herein
In order to explain the present invention, it is not intended to limit the present invention.
Fig. 1 is the structural representation of a kind of full-inorganic QLED preferred embodiment of the present invention, as it can be seen, include substrate 1,
The N-type semiconductor 2 being deposited on substrate 1, the quantum dot 3 being deposited on the step of N-type semiconductor 2 both sides and N-type electrode 6,
The P-type semiconductor 4 being sequentially deposited on quantum dot 3 and P-type electrode 5；Described N-type semiconductor is n-GeAs, n-GeSb, n-
One in SiAs, n-SiSb；Described P-type semiconductor is the one in p-GeAs, p-GeSb, p-SiAs, p-SiSb.
The full-inorganic QLED of the present invention, electron transfer layer therein is N-type semiconductor, and hole transmission layer is P-type semiconductor.
It addition, different from existing semi-conducting material based on nitrogenous gallium class, the N-type semiconductor of the present invention and P-type semiconductor are all bases
In silicon (Si) and the semi-conducting material of germanium (Ge).Specifically, N-type semiconductor and the P-type semiconductor of the present invention is all based on such as arsenic
(As), antimony (Sb) doped silicon (Si) and the semi-conducting material of germanium (Ge).Preferably, Si/Ge and As/ in N-type semiconductor of the present invention
The mol ratio of Sb is (1:100-100:1).In P-type semiconductor, the mol ratio of Si/Ge Yu As/Sb is (1:100-100:1).
The full-inorganic QLED of the present invention, electron transfer layer therein is N-type semiconductor, and hole transmission layer is P-type semiconductor,
Under the effect of extra electric field, N-type and P-type semiconductor carry out the transmission in electronics and hole respectively, and in quantum dot active layer
Carry out electron-hole recombinations excitation quantum point luminous.Utilize the above-mentioned semi-conducting material of the present invention as the electronics of QLED device and sky
It is higher that cave transport layer compares semiconductor structure materials electron mobility based on nitrogenous gallium class, and charge transport rate is higher, Jin Eryou
The recombination rate improving electron hole of effect；And utilize this device architecture simple to prepare full-inorganic QLED not only preparation method,
And the life-span of device can be effectively improved.
Preferably, the N-type semiconductor of the present invention is n-GeSb, and P-type semiconductor is p-GeSb, utilizes this semi-conducting material to make
For electronics and the hole transmission layer of QLED device, can further improve the mobility of electronics, and improve electron hole further
Recombination rate.
Preferably, the thickness of N-type semiconductor of the present invention is 10-500nm, and the thickness of P-type semiconductor is 50-500nm.
Substrate of the present invention is rigidity substrate or flexible substrate.Wherein, described rigidity substrate can be but be not limited to red
Bao Shi (α-Al2O3), spinelle (MgO Al2O3), silicon dioxide (SiO2), one in glass.Described flexible substrate can be
But it is not limited to polyethylene film, polypropylene screen, polystyrene film, polyethylene terephthalate film, gathers naphthalenedicarboxylic acid second two
One in alcohol ester film, polyimide film, polycarbonate membrane, polychloroethylene film, polyvinyl alcohol film.
Quantum dot of the present invention can be core-shell quanta dots, and the core of described core-shell quanta dots can be-Race
CdS, CdTe, CdSe, ZnSe, ZnTe,-PbS, PbSe, PbSeS of race,-InP, GaP of race,--Race
The semiconductor nano material such as CuInS, CuGaS in one or more；The shell of described core-shell quanta dots can be-Race
One or more in the semi-conducting materials such as ZnS, ZnSe, CdS.Preferably, the thickness of quantum dot layer of the present invention is 10-50nm.
N-type electrode of the present invention can be but be not limited to Al, Ti/Al, LiF/Al, Ca, Ba, Ca/Al, LiF/Ag, Ca/
Ag、BaF2、BaF2/Al、BaF2/Ag、BaF2/Ca/Al、BaF2/Ca、Ag、Mg、CsF/Al、CsCO3One or more in/Al.
P-type electrode of the present invention is indium tin oxide, fluorine mixes stannum oxide, indium-zinc oxide, aluminum mixes zinc oxide, gallium mixes oxygen
Change zinc, cadmium mixes the one in zinc oxide, copper indium oxide, stannum oxide, zirconium oxide, Graphene, CNT, nickel, gold, platinum, palladium
Or it is multiple.
The flow chart of the preparation method preferred embodiment of a kind of arbitrary described full-inorganic QLED of the present invention, such as figure
Shown in 2, including step:
S100, prepare a substrate；
S200, on substrate deposited n-type quasiconductor；
S300, on the step of N-type semiconductor both sides, deposit quantum dot and N-type electrode respectively；
S400, it is sequentially depositing P-type semiconductor and P-type electrode over the qds, obtains full-inorganic QLED；
Described N-type semiconductor is the one in n-GeAs, n-GeSb, n-SiAs, n-SiSb；
Described P-type semiconductor is the one in p-GeAs, p-GeSb, p-SiAs, p-SiSb.
The present invention can use vacuum evaporation, sputtering, spin coating or Method of printing to deposit above-mentioned each functional layer.Preferably, this
The bright vacuum deposition method using maturation prepares above-mentioned N-type semiconductor and P-type semiconductor, utilizes the method preparation not only to operate
Simply, it is also possible to be effectively improved the efficiency of full-inorganic QLED.
Below by an embodiment, the present invention is described in detail.
Preparing of HONGGUANG full-inorganic QLED is as follows:
(1), red packet stone (α-Al2O3) substrate cleaning:
First with deionized water, isopropanol, cleans 15min at the bottom of red packet stone lining with this continuously.Then high pressure inert air gun is utilized to incite somebody to action
After red packet stone lining basal surface dries up, it is then transferred to vacuum evaporation indoor.
(2), the preparation of p-GeSb film:
Utilizing the target with proper ratio Ge:Sb is 2:8 in molar ratio, and under certain vacuum condition, evaporation has certain thickness
The p-GeSb film (its corresponding thickness is 100nm) of degree.
(3), the preparation of HONGGUANG CdSe/ZnS quantum dot solid film:
The p-GeSb film prepared is taken out from vacuum evaporation intracavity, solid by the red CdSe/ZnS quantum dot of spin coating proceeding preparation
State film (its corresponding thickness is at 30nm), is placed into from vacuum evaporation indoor again after annealed process.
(4), to utilize same step (2) be 8:2 by the mol ratio of its composition of target of regulation proper ratio Ge:Sb,
Under certain vacuum condition, evaporation has certain thickness n-GeSb film (its corresponding thickness is at 100nm).
(5), by be sequentially depositing p-GeSb film, HONGGUANG CdSe/ZnS quantum dot solid film, n-GeSb film red packet stone (α-
Al2O3) substrate is deposited with corresponding n-type electrode: Ti/Al and P-type electrode: Au/Ni respectively by different corresponding mask plates again.
In sum, a kind of full-inorganic QLED that the present invention provides and preparation method thereof, the full-inorganic QLED of the present invention, its
In electron transfer layer be N-type semiconductor, hole transmission layer is P-type semiconductor, and N-type semiconductor and P-type semiconductor are all based on
Silicon (Si) and the semi-conducting material of germanium (Ge).Under the effect of extra electric field, N-type and P-type semiconductor carry out electronics and sky respectively
The transmission in cave, and it is luminous to carry out electron-hole recombinations excitation quantum point in quantum dot active layer.Utilize that the present invention is above-mentioned partly to be led
Body material compares semiconductor structure materials electron transfer based on nitrogenous gallium class as the electronics of QLED device with hole transmission layer
Rate is higher, and charge transport rate is higher, and then the effective recombination rate improving electron hole；And utilize this device architecture to prepare
Full-inorganic QLED not only preparation method is simple, and can be effectively improved the life-span of device.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved according to the above description or to convert, all these modifications and variations all should belong to the guarantor of claims of the present invention
Protect scope.
Claims (10)
1. a full-inorganic QLED, it is characterised in that include substrate, the N-type semiconductor being deposited on substrate, be deposited on N
Quantum dot on the step of type quasiconductor both sides and N-type electrode, the P-type semiconductor being sequentially deposited on quantum dot and P-type electrode；
Described N-type semiconductor is the one in n-GeAs, n-GeSb, n-SiAs, n-SiSb；
Institute's P-type semiconductor is the one in p-GeAs, p-GeSb, p-SiAs, p-SiSb.
Full-inorganic QLED the most according to claim 1, it is characterised in that described substrate is rigidity substrate or flexible substrate.
Full-inorganic QLED the most according to claim 2, it is characterised in that described rigidity substrate be red packet stone, spinelle, two
One in silicon oxide, glass.
Full-inorganic QLED the most according to claim 2, it is characterised in that described flexible substrate is polyethylene film, polypropylene
Film, polystyrene film, polyethylene terephthalate film, polyethylene naphthalate film, polyimide film, poly-carbonic acid
One in ester film, polychloroethylene film, polyvinyl alcohol film.
Full-inorganic QLED the most according to claim 1, it is characterised in that described quantum dot is core-shell quanta dots.
Full-inorganic QLED the most according to claim 1, it is characterised in that the core of described core-shell quanta dots is CdS, CdTe,
One or more in CdSe, ZnSe, ZnTe, PbS, PbSe, PbSeS, InP, GaP, CuInS, CuGaS.
Full-inorganic QLED the most according to claim 5, it is characterised in that the shell of described core-shell quanta dots is ZnS, ZnSe,
One or more in CdS.
Full-inorganic QLED the most according to claim 1, it is characterised in that described type electrode is Al, Ti/Al, LiF/Al,
Ca、Ba、Ca/Al、LiF/Ag、Ca/Ag、BaF2、BaF2/Al、BaF2/Ag、BaF2/Ca/Al、BaF2/Ca、Ag、Mg、CsF/Al、
CsCO3One or more in/Al.
Full-inorganic QLED the most according to claim 1, it is characterised in that described P-type electrode is that indium tin oxide, fluorine mix oxygen
Change stannum, indium-zinc oxide, aluminum mixes zinc oxide, gallium mixes zinc oxide, cadmium mixes zinc oxide, copper indium oxide, stannum oxide, zirconium oxide, stone
One or more in ink alkene, CNT, nickel, gold, platinum, palladium.
10. the preparation method of the full-inorganic QLED as described in claim 1 ~ 9 is arbitrary, it is characterised in that include step:
A, prepare a substrate；
B, on substrate deposited n-type quasiconductor；
C, on the step of N-type semiconductor both sides, deposit quantum dot and N-type electrode respectively；
D, it is sequentially depositing P-type semiconductor and P-type electrode over the qds, obtains full-inorganic QLED；
Described N-type semiconductor is the one in n-GeAs, n-GeSb, n-SiAs, n-SiSb；
Described P-type semiconductor is the one in p-GeAs, p-GeSb, p-SiAs, p-SiSb.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711309A (en) * | 2016-12-28 | 2017-05-24 | Tcl集团股份有限公司 | Flexible fully-inorganic QLED device and preparation method thereof |
| CN110257049A (en) * | 2019-07-10 | 2019-09-20 | 电子科技大学 | A kind of CuGaS2/ CdS core core-shell structure quantum dots material and preparation method and photoelectrochemical cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009103124A1 (en) * | 2008-02-22 | 2009-08-27 | The University Of Melbourne | Semiconductor device including nanocrystals and methods of manufacturing the same |
| CN103840048A (en) * | 2014-03-14 | 2014-06-04 | 东南大学 | Inverted type full inorganic nanometer oxide quantum dot light-emitting diode and manufacturing method thereof |
| US20160032183A1 (en) * | 2014-07-30 | 2016-02-04 | Yagnaseni Ghosh | Alloyed rod structure in a nanocrystalline quantum dot |
| CN105552184A (en) * | 2016-01-20 | 2016-05-04 | Tcl集团股份有限公司 | All-inorganic quantum dot light emitting diode and preparation method therefor |
-
2016
- 2016-09-29 CN CN201610863081.7A patent/CN106206885B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009103124A1 (en) * | 2008-02-22 | 2009-08-27 | The University Of Melbourne | Semiconductor device including nanocrystals and methods of manufacturing the same |
| CN103840048A (en) * | 2014-03-14 | 2014-06-04 | 东南大学 | Inverted type full inorganic nanometer oxide quantum dot light-emitting diode and manufacturing method thereof |
| US20160032183A1 (en) * | 2014-07-30 | 2016-02-04 | Yagnaseni Ghosh | Alloyed rod structure in a nanocrystalline quantum dot |
| CN105552184A (en) * | 2016-01-20 | 2016-05-04 | Tcl集团股份有限公司 | All-inorganic quantum dot light emitting diode and preparation method therefor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711309A (en) * | 2016-12-28 | 2017-05-24 | Tcl集团股份有限公司 | Flexible fully-inorganic QLED device and preparation method thereof |
| CN106711309B (en) * | 2016-12-28 | 2019-06-11 | Tcl集团股份有限公司 | A kind of flexibility full-inorganic QLED device and preparation method thereof |
| CN110257049A (en) * | 2019-07-10 | 2019-09-20 | 电子科技大学 | A kind of CuGaS2/ CdS core core-shell structure quantum dots material and preparation method and photoelectrochemical cell |
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| CN106206885B (en) | 2019-02-26 |
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