CN106205768B - The compound conductive material of a kind of graphene film and metal Nano structure and preparation method - Google Patents
The compound conductive material of a kind of graphene film and metal Nano structure and preparation method Download PDFInfo
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- CN106205768B CN106205768B CN201610547684.6A CN201610547684A CN106205768B CN 106205768 B CN106205768 B CN 106205768B CN 201610547684 A CN201610547684 A CN 201610547684A CN 106205768 B CN106205768 B CN 106205768B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
Abstract
The invention discloses a kind of graphene film and the compound conductive material of metal Nano structure, including metal Nano structure and the graphene film being attached on metal Nano structure, graphene film is attached on metal Nano structure or coated metal Nano structure by carbon segregation method, and the number of plies of graphene film is 1 30 layers；The preparation method of the compound conductive material of graphene film and metal Nano structure, will metal Nano structure add it is heat-treated in carbon dust of the purity higher than 80% after graphene film is formed on metal Nano structure, conductive material is made.The conductive material that the present invention is provided possesses mechanical flexibility and high conductivity and adjustable translucency, meanwhile, the transparent material also has the characteristic for preventing that metal is oxidized.The preparation method of the conductive material provided the invention also discloses the preparation method of the conductive material, the present invention need not shift graphene film, and simple to operate, it is not necessary to use organic solvent, environmental protection is cost-effective.
Description
The present invention is divisional application, the Application No. of original application：201510016423.7；The applying date is：2015.01.13；
Invention and created name：The compound conductive material of a kind of graphene film and metal Nano structure and preparation method.
Technical field
The present invention relates to conductive material field, more particularly to a kind of graphene film and the compound conduction of metal Nano structure
Material and preparation method.
Background technology
Transparent conductive film material is widely used in the opto-electronic devices such as touch-screen, various display devices, solar cell.
The 97% of transparent conductive film in the market is above is a kind of indium tin oxide target (ITO) electrically conducting transparent material of indium containing rare earth metal
Material, ITO has higher transparency high as transparent electrode material, and surface resistance can be with as little as 30 Ω/.But indium metal is on ground
Content in shell is limited, and cost is raised year by year；Meanwhile, there is chemical property and the unstable, mechanical equivalent of light fragility of thermal property etc. in ITO.Can
The fast development of the photoelectric device of wearing is that transparent conductive film proposes higher requirement, such as mechanical flexibility, lightweight etc..
So in the urgent need to finding a kind of high light transmission rate, low areal resistance, flexible novel transparent conductive material.
To solve the above mentioned problem that ITO transparent conductive electrodes are present, researcher have developed metallic mesh, graphene in succession
The transparent conductive materials such as film, carbon nano-tube film, metal oxide.There is fragility and translucency in metal oxide such as AlZnO
Not enough the problems such as.Although the surface resistance of metallic mesh is less than 80 Ω/, grid is light tight, there is in grid pipe-pipe or line-
The resistance of the junction of line and electrode/activity bed boundary is higher, the shortcomings of metal is easily oxidized.
Physically, graphene be one kind by carbon atom with sp2Hybridized orbit composition hexangle type is in the plane two of honeycomb lattice
Material is tieed up, is the two-dimensional material of single carbon atom thickness, its thickness is 0.334nm.Graphene as a kind of semi-metallic its
Special pore structure, determines the characteristics of it has flexible.Carrier concentration is up to 10 inside graphene13cm-2, it is theoretical
Mobility can reach 200000cm2/ Vs, and the light transmittance of single-layer graphene reaches 97.7%, and these are unique and excellent
Property causes graphene to turn into one of most potential substitute of transparent electrode material.CVD growth graphene can be shifted
On the substrate arbitrarily needed, but transfer process causes the change of graphene performance.
The patent application of Application No. 201110057896.3 discloses a kind of composite conducting material, and the conductive material is
Graphene/copper nano-wire composite conducting material, including：Graphene, copper nano-wire and binding agent；Wherein copper nano-wire accounts for graphene
The weight fraction of weight is 1%-99%, and the weight fraction that the binding agent accounts for graphene/copper nano-wire gross weight is 1%-
50%；The graphene number of plies is 1~20 layer.The invention also provides the preparation method of the composite：(a) graphite is provided
Alkene, copper nano-wire and binding agent；Binding agent is dissolved in organic solvent, the organic solution of binding agent is obtained；(b) to graphene, copper
Nano wire is mixed with the organic solution of binding agent, obtains mixture；(c) scattered 1h- is carried out to the mixture of the step (b)
48h, solidifies under protective atmosphere, and solidification temperature is 100 DEG C -400 DEG C, and hardening time is 10min-20min, obtains described compound
Conductive material.The composite conducting material that the invention is provided is to synthesize conductive material using chemical solution blending method, in organic solvent
Middle blending can cause graphene rupture, defect to be formed, and influence electric conductivity, easily cause environmental pollution；It is prepared by the invention graphene
During require remove Catalytic Layer；Also cause the surface resistance of conductive material higher in addition, it is difficult to meet the requirement of practical application.
The content of the invention
The invention provides a kind of graphene film and the compound conductive material of metal Nano structure.What the present invention was provided leads
Electric material possesses excellent electric conductivity, adjustable translucency and good mechanical flexibility.
The compound conductive material of a kind of graphene film and metal Nano structure, including metal Nano structure and it is attached to gold
Belong to the graphene film in nanostructured, graphene film is attached directly to by the method for chemical vapour deposition technique or carbon segregation
On metal Nano structure or cladding metal Nano structure, the number of plies of the graphene film is 1-30 layers.
Graphene film of the present invention refers to the graphene in the physical significance comprising the different numbers of plies.Graphene film
The number of plies is different, and light transmittance is different, and surface resistance is also different, can according to practical application the need for be adjusted.
Described metal Nano structure is the nanostructured of copper, silver, gold, platinum, nickel, aluminium, magnesium, tungsten, ruthenium or its alloy composition.
Described metal Nano structure is nano wire, nano particle, nanotube, nanometer tree branches structure and Nanostructure Network
At least one of.
Described nano wire, nano particle, size at least one-dimensional in the three-dimensional structure of nanotube and nanometer tree branches structure
No more than 50 μm, the translucency of conductive material being capable of adjusted and optimization with conductive network within the range.
The grid line width of described Nanostructure Network is 2nm-5000nm, within the range conductive material translucency
Being capable of adjusted and optimization with conductive network.
Preferably, a diameter of 50nm-200nm of described nano wire, nano particle, nanotube and nanometer tree branches, at this
In the range of conductive material voidage it is higher, translucency preferably, the width of a diameter of branch line of the nanometer tree branches.
The grid line width of described Nanostructure Network is 50nm-200nm, within the range conductive material voidage
Higher, translucency is preferable.
Described Nanostructure Network is to be processed into by metallic film by micro-nano.It is described it is micro-nano be processed as it is existing
Common technology, including photoetching, plasma etching, electron beam lithography, Laser Processing etc..
The graphene film surface of conductive material of the present invention is accompanied by supporting layer, and described supporting layer is conductive high
Molecular layer or insulating polymer layer.Supporting layer plays a protective role to graphene film, while improving surface, the boundary of conductive material
Face performance, the material that can be played a protective role can act as supporting layer.
The material of described electroconductive polymer layer be polythiophene, polyaniline, polythiophene, it is poly- to benzene polypyrrole, polyphenylacetylene,
At least one of Polyglycolic acid fibre-poly styrene sulfonate, poly-phenylene vinylene (ppv), polyfluorene and polyacetylene；Conductive polymer
Sublayer undertake conductive fill effect, improve surface, interface performance, described conducting polymer composite have good electric conductivity and
Translucency, can improve the electric conductivity of conductive material, adjust the translucency of conductive material.
The material of described insulating polymer layer is polyethylene terephthalate, makrolon, polyvinyl chloride, poly- second
Alkene, polymethyl methacrylate, dimethyl silicone polymer, heat release adhesive tape and water-soluble adhesive tape (water-soluble tape)
At least one of；Described insulating polymer material is transparent polymer material, and transparent insulation high polymer material has excellent
Acid and alkali-resistance characteristic, improve transparent conductive material surface property, while adjust translucency.
Preferably, the material of described insulating polymer layer is polyethylene terephthalate, poly-methyl methacrylate
Ester, heat release at least one of adhesive tape and water-soluble adhesive tape (water-soluble tape)；Heat release adhesive tape (heat-releasable
Adhesive tape) and water-soluble adhesive tape be industrially conventional adhesive tape；Heat release adhesive tape generally refers to have adhesion under certain conditions
Performance, but easily lose adhesiveness at a certain temperature and separated with graphene film；Water-soluble adhesive tape generally refers to have
The adhesive tape of adhesiveness meets the adhesive tape that can be dissolved after water, using conductive material made from heat release adhesive tape and water-soluble adhesive tape,
Supporting layer and graphene film can be easily separated.
When the thickness of supporting layer is smaller, the protective capability to graphene film is weaker；When the thickness of supporting layer is larger, to stone
The protective capability of black alkene film is stronger.
Preferably, described supporting layer thickness is 10nm~5000nm, and in the supporting layer thickness range, conductive material is led
Electrical property is preferable, while the translucency of conductive material can adjust.
It is further preferred that described supporting layer thickness is 300nm-1000nm, in preferred supporting layer thickness range,
Conductive material electric conductivity is preferable, while the translucency of conductive material can adjust.
Described graphene film includes heteroatom or molecule.Heteroatom or molecule are carried out to graphene film
Doping is modified, and can effectively improve the carrier concentration of graphene film, reduces surface resistance.
Described heteroatom or molecule contains at least one of nitrogen, boron, sulphur, hydrogen, oxygen, fluorine, silicon and P elements.
Preferably, described heteroatom or molecule contain at least one of nitrogen, boron and oxygen element, and adulterate nitrogenous, boron
Or the conductive material that the graphene film of oxygen is combined with metal Nano structure, it is easy to regulate and control carrier concentration and surface resistance.
The compound conductive material of graphene film and metal Nano structure that the present invention is provided have excellent electric conductivity and
Adjustable translucency.
The square resistance for the conductive material that the present invention is provided is 5 Ω/~1000 Ω/, and light transmittance 5%~97% is curved
Bilge radius<10mm.
The present invention also provides the preparation method of the conductive material, and metal Nano structure and carbon source are added into chemical gaseous phase
Metal Nano structure is added heat-treated formation graphene film in carbon dust of the purity higher than 80% by depositing system, is made
Graphene film and the compound conductive material of metal Nano structure.
Metal Nano structure described in preparation method of the present invention is metal nanoparticle, metal nanometer line, metal nano-tube,
At least one of nanometer tree branches structure and Nanostructure Network.
The carbon source is gaseous carbon source, liquid carbon source or solid-state carbon source, and adulterate hetero atom or molecule preparation bag in carbon source
Graphene film containing heteroatom or molecule.
It is further preferred that the preparation method for the conductive material that the present invention is provided comprises the following steps：
(a) metallic film and carbon source are added to chemical gas-phase deposition system or metallic film is added into purity and be higher than 80%
Carbon dust in heat-treated formation graphene film；
(b) supporting layer is prepared on the surface of graphene film；
(c) continuous metallic film is subjected to micro-nano processing, removes 5%~99% in metallic film full wafer area,
Graphene film and the compound conductive material of metal Nano structure is made.
The thickness of metallic film described in step (a) is not more than 50 μm.
The method of supporting layer is prepared in step (b) for existing method, including spin-coating method or pressed film method.
5%~99% in metallic film full wafer area is removed in step (c), it is therefore an objective to which wire netting is made in metallic film
Shape nanostructured, obtains graphene film and the compound conductive material of metal net shaped nanostructured.The conductive material has good
Translucency and electric conductivity.
Preferably, 50%~90% in metallic film full wafer area is removed, obtained conductive material has well saturating
Photosensitiveness and electric conductivity, light transmittance can reach more than 80%.
Step (c) is made after graphene film and the compound conductive material of metal Nano structure, can be according to the actual needs
Supporting layer is got rid of.
At present, the technology of high-quality graphene film can be prepared on a large scale mainly includes chemical vapour deposition technique (CVD)
With the method for carbon segregation (surface segregation).Because CVD and carbon segregation method are to prepare the conventional side of graphene film
Method, therefore the present invention does not elaborate to the specific steps for preparing graphene film.
Electrically conducting transparent is used as present invention also offers a kind of graphene film and the compound conductive material of metal Nano structure
The application of film.The conductive material can as touch-screen, liquid crystal display, smart window etc. nesa coating.
Compared with prior art, the invention has the advantages that：
Graphene film and metal Nano structure are combined and prepare conductive material by the present invention, and it is soft that the conductive material has machinery concurrently
Property and high conductivity and adjustable translucency.Meanwhile, graphene film is attached to metal Nano structure in the transparent material
On, metal can be prevented to be oxidized, electric conductivity and stability is improved.
The preparation method that the present invention is provided need not use organic solvent, and obtained graphene will not produce rupture, defect,
Meanwhile, do not result in environmental pollution.Graphene film, operation letter need not be shifted in graphene film preparation process of the present invention
It is single.
Brief description of the drawings
The schematic diagram for the conducting material structure that the graphene film and metal Nano structure that Fig. 1 is prepared for the present invention are combined,
Wherein 1 is metal Nano structure, and 2 be graphene film；Fig. 1 (a) and Fig. 1 (b) represents that graphene film and metal nano are netted
The schematic diagram of the conducting material structure of structure composite；Fig. 1 (c) represents the conduction material that metal nanoparticle is combined with graphene film
Expect the schematic diagram of structure；Fig. 1 (d) represents the schematic diagram for the conducting material structure that graphene film is combined with metal nanometer line.
Fig. 2 is the number of the conductive material of polyethylene terephthalate/nitrogen-doped graphene film/copper nanostructured
Camera photos.
Fig. 3 is the light transmittance collection of illustrative plates of polyethylene terephthalate/graphene film/ambrose alloy nanostructured, graphene
The number of plies of film is 1,2 and 3 layers.
Embodiment
Embodiment 1 uses CVD synthesizing graphite alkene film, including following basic step in copper nanostructured：
(1) copper nano particles (particle diameter about 100nm) are uploaded to the CVD system of graphene preparation；
(2) using methane gaseous carbon source (H2/CH4Flow-rate ratio be 20：1) on copper nano particles surface, synthesizing graphite alkene is thin
Film, synthesis temperature is 1030 DEG C, and generated time is 2 hours, obtains the graphene that graphene film is 4 layers, thus forms copper：
The conductive material of the core shell structure of graphene film, shown in its structure chart such as Fig. 1 (c).
The graphene film that embodiment 1 is synthesized is 4 layers of graphene, can also be according to being actually needed, and regulation prepares graphite
The experiment parameters such as the time of alkene film, the flow of methane and the number of plies for adjusting synthesizing graphite alkene film.Synthesizing graphite alkene film
Carbon source can select gaseous state, liquid even solid-state carbon source according to being actually needed.Form metal Nano structure：Graphene film
After core shell structure, conducting film can be prepared according to concrete application such as touch-screen, liquid crystal display, smart window etc. of conducting film, made
Printable conductive material can be formed when standby according to needing to add other compounds, solvent etc..
Embodiment 2 uses carbon segregation method synthesizing graphite alkene film, including following basic step in monel nanostructured
Suddenly：
(1) ambrose alloy nano wire (diameter about 50nm, length about 5000nm) is embedded in the carbon dust that purity is 85%；
(2) handled 20 hours at about 1000 DEG C of temperature；
(3) room temperature is cooled to, the surface that such carbon atom is segregated in monel forms graphene film (about 30 layers of thickness
Graphene), formed ambrose alloy：The core shell structure of graphene film, shown in its structure chart such as Fig. 1 (d).
The metal Nano structure that embodiment 2 is used is monel nano wire, but it is also possible to select other metal nano knots
Structure, such as silver, gold, platinum, nickel, aluminium, magnesium, tungsten, ruthenium and their alloy are constituted, and its size yardstick, shape etc. can be according to realities
Border needs and determined.Use the black alkene film that carbon segregation method is synthesized for 30 layers of graphene, can also be adjusted according to being actually needed
Prepare the experiment parameters such as time, the temperature of graphene film and adjust the number of plies of synthesizing graphite alkene film.Form metal nano knot
Structure：After the core shell structure of graphene film, printable conduction can be formed according to needing to add other compounds, solvent etc.
Material.
Embodiment 3 uses solid-state carbon source method synthesizing graphite alkene film, including following basic step on nickel foil：
(1) nickel foil (thickness is 25 μm) is uploaded into graphene preparation system；
(2) one layer of about 10nm carbon film is prepared on nickel foil, then in Ar/H2Atmosphere under, have the nickel of carbon film to deposition
Paper tinsel is heat-treated about 40 minutes, is then cooled to room temperature and is prepared graphene film (number of plies is 3 layers of graphene)；
(3) polymethacrylates (PMMA) branch is prepared on the graphene film of nickel/graphene film using spin-coating method
Support layer, the thickness about 500nm of supporting layer；
(4) micro-nano technology is carried out to the nickel foil of PMMA/ graphene films/nickel, makes the webbed nanostructured of nickel foil shape, nickel
Nickel strap width in network structure is 300nm, so as to prepare the conductive material of PMMA/ graphene films/nickel screen grid, its structure
Figure is as shown in Fig. 1 (a).
Embodiment 3 uses nickel film, utilizes solid-state carbon source synthesizing graphite alkene film, but it is also possible to select other metallic films
Such as copper, silver, gold, platinum, nickel, aluminium, magnesium, tungsten, ruthenium and their alloy composition, its thickness foundation are actually needed and determined.Close
Into the method for graphene film graphene film prepared using the carbon segregation method of solid-state carbon source, the thickness of graphene film can be with
According to being actually needed, regulation prepares the time of graphene film, Ar/H2The layer of synthesizing graphite alkene film is adjusted Deng experiment parameter
Number.The carbon source of synthesizing graphite alkene film can also select gaseous carbon source, liquid carbon source according to being actually needed.The material of supporting layer
Selection can be conductive, insulation, preferably transparent high polymer material.Can be from current to the micro-nano technology of metallic film
Conventional technological means, such as photoetching, Laser Processing, electron beam lithography etc., shape, size after processing etc. can be according to reality
Need and determine.Formed after metal Nano structure/graphene film/supporting layer, supporting layer can retain or remove according to needs
Go.Nesa coating can be prepared according to concrete application such as touch-screen, liquid crystal display, smart window etc. of nesa coating, made
Printable transparent conductive material can be formed when standby according to needing to add other compounds, solvent etc..
Embodiment 4 synthesizes the graphene film of N doping, including following basic step on copper foil using CVD：
(1) copper foil (thickness is 25 μm) is uploaded to the CVD system of graphene preparation；
(2) graphene film of N doping is synthesized as nitrogen source as gaseous carbon source, ammonia using acetylene, first in Ar/
H2Atmosphere under copper foil is handled, then under acetylene (20sccm), the atmosphere of ammonia (5sccm) and hydrogen (40sccm)
Synthesize the graphene film (being the nitrogen-doped graphene of individual layer) of N doping；
(3) heat release adhesive tape (being purchased from Japan Nitto Denko companies, Revalpha types) is attached to using the method for press mold
The nitrogen-doped graphene film surface of copper/nitrogen-doped graphene film, heat releases adhesive tape for supporting layer, and the thickness of supporting layer is about 50
μm。
(4) copper foil that adhesive tape/nitrogen-doped graphene film/copper is discharged to heat carries out micro-nano technology, forms copper foil netted
Nanostructured, the copper line width in copper network structure is 40nm, thus prepare heat release adhesive tape/nitrogen-doped graphene film/
The structure of copper mesh grid；
(5) poly- (3,4- ethylene dioxies are prepared in the copper mesh grid face of heat release adhesive tape/nitrogen-doped graphene film/copper mesh grid
Thiophene)-polystyrolsulfon acid (PEDOT：PSS) conductive material, forms heat release adhesive tape/nitrogen-doped graphene film/copper mesh grid
(PEDOT:PSS)；
(6) heat is discharged into adhesive tape/nitrogen-doped graphene film/copper mesh grid (PEDOT:PSS certain temperature) is heated to, is made
Heat release adhesive tape and nitrogen-doped graphene thin film separation, form nitrogen-doped graphene film/copper mesh grid (PEDOT:PSS electrode)
Material, shown in its structure chart such as Fig. 1 (b).
Embodiment 4 uses copper foil, synthesizes the graphene of heteroatom as nitrogen source by the use of acetylene as carbon source, ammonia
Film, its thickness foundation is actually needed and determined.Heteroatom or molecule can be the other atoms of such as boron or molecule.Synthesis
The thickness of doped graphene film can adjust preparation time, the flow of carbon containing source of the gas, Ar/H according to being actually needed2Deng experiment
Parameter and the number of plies for adjusting synthesizing blender graphene film.Formed after metal Nano structure/graphene film/supporting layer, support
Layer can retain or remove according to needs.The present embodiment has used conducting polymer composite PEDOT:PSS, can also use it
Its conductive material and improve surface/interface performance.Can according to nesa coating concrete application for example touch-screen, liquid crystal display,
Smart window etc. and prepare nesa coating, can form printable according to needing to add other compounds, solvent etc. during preparation
Conductive material.
The basic photoelectricity parameter of conductive material prepared by embodiment 1-4 is as shown in table 1.
Table 1
Hall mobility and carrier concentration determine the size of the electrical conductivity (inverse of resistivity) of conductive material together.Move
Shifting rate is bigger, and carrier concentration is bigger, and electrical conductivity is bigger, and electric conductivity is stronger.Surface resistance is smaller, and electric conductivity is stronger.
Embodiment 5 uses CVD synthesizing graphite alkene film, including following basic step on monel paper tinsel：
(1) monel paper tinsel (thickness is 50 μm) is uploaded to the CVD system of graphene preparation；
(2) using acetylene gas as gaseous carbon source synthesizing graphite alkene film, first in Ar/H2Atmosphere under to copper foil carry out
Processing, then the synthesizing graphite alkene film under the atmosphere of acetylene, hydrogen and argon gas, adjusts the parameter such as gas of synthesizing graphite alkene film
Body flow-rate ratio, time and temperature etc. obtain the graphene that thickness is a small number of layers (i.e. 3-10 layers)；
(3) PET (polyethylene terephthalate) supports are prepared in the graphenic surface of monel/graphene film
Layer, the thickness of supporting layer is 400nm.
(4) micro-nano technology is carried out to the monel paper tinsel of PET/ graphene films/monel, the ambrose alloy for removing 60% is closed
Goldleaf area, the width for making the ambrose alloy structure in the webbed nanostructured of monel paper tinsel shape, monel network structure is
100nm, so that the transparent conductive material of PET/ graphene films/ambrose alloy grid is prepared, as shown in Fig. 2 the electrically conducting transparent material
The light transmittance collection of illustrative plates of material is as shown in Figure 3.
Claims (2)
1. the compound conductive material of a kind of graphene film and metal Nano structure, including metal Nano structure and it is attached to metal
Graphene film in nanostructured, it is characterised in that the graphene film is attached to metal nano knot by carbon segregation method
On structure or cladding metal Nano structure, the number of plies of the graphene film is 1-30 layers；
The preparation method of described graphene film and the compound conductive material of metal Nano structure, metal Nano structure is added
Graphene film is formed on metal Nano structure after purity is heat-treated in the carbon dust higher than 80%, graphene film is made
The conductive material being combined with metal Nano structure；
Described metal Nano structure is in nano wire, nano particle, nanotube, nanometer tree branches structure and Nanostructure Network
It is at least one；Described nano wire, nano particle, size at least one-dimensional in the three-dimensional structure of nanotube and nanometer tree branches are little
In 50 μm, the grid line width of described Nanostructure Network is 2nm-5000nm；
Described graphene film includes heteroatom or molecule, the heteroatom or molecule contain nitrogen, boron, sulphur, hydrogen,
At least one of oxygen, fluorine, silicon and P elements.
2. graphene film according to claim 1 and the compound conductive material of metal Nano structure, it is characterised in that institute
The metal Nano structure stated is the nanostructured of copper, silver, gold, platinum, nickel, aluminium, magnesium, tungsten, ruthenium or its alloy composition.
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| WO2017210819A1 (en) * | 2016-06-06 | 2017-12-14 | 孙英 | Novel electrically conductive graphite material |
| CN106297966A (en) * | 2016-08-22 | 2017-01-04 | 广东纳路纳米科技有限公司 | Nesa coating that a kind of metal nanometer line oxidation-resistant material is compound and preparation thereof |
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