CN106191816B - A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method - Google Patents
A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method Download PDFInfo
- Publication number
- CN106191816B CN106191816B CN201610528450.7A CN201610528450A CN106191816B CN 106191816 B CN106191816 B CN 106191816B CN 201610528450 A CN201610528450 A CN 201610528450A CN 106191816 B CN106191816 B CN 106191816B
- Authority
- CN
- China
- Prior art keywords
- gas
- chamber
- air inlet
- lifting spindle
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Abstract
A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method, belong to hot-wire chemical gas-phase deposition technical field.The upside angle position of circular cylindrical cavity is along 45 degree of welded corner joint air flaps, air flap and chamber top corner part form a closed inlet plenum, air inlet is distributed in gas baffle, inlet plenum connects air inlet, the indoor bottom connection electrode column of the vacuum chamber of circular cylindrical cavity, aspirating chamber, and aspirating chamber connects lifting spindle and bleeding point, lifting spindle connects chip bench, electrode column connects heated filament, and aspirating chamber has pumping locular wall, there is a gap between aspirating chamber and lifting spindle.The present invention can solve the problem of reaction gas is unevenly distributed in hot-filament chemical vapor deposition equipment deposition chambers, at the same be not easy to produce dust, particle falls to depositing base surface.
Description
Technical field
The present invention relates to a kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and methods, belong to Hot Filament Chemical Vapor
Deposition arts.
Background technique
The beginning of the eighties in last century, American-European-Japanese equal developed countries have started chemical vapor deposition diamond synthesis film new material
Research, to the nineties, has theoretically substantially found out the growth mechanism of chemistry for gas phase depositing diamond film, in the 21st century,
No matter from deposition technique, processing technology or application aspect great progress is all achieved.During this, it is developed heated filament
CVD method, direct current plasma CVD method, radio frequency plasma CVD method, microware bursts method, direct current-arc plasma CVD method, fire
Flame burning CVD method or even laser CVD method etc., by development in more than 20 years, for its industrialized scale and influence power, microwave
CVD and HF CVD are main application technology, and compared with microwave, cost is relatively low for thermal filament chemical vapor deposition of diamond thin film technique,
Equipment is simple, is easy to large area deposition, and diameter and thickness has reached 300mm and 2mm or more at present, and this method also takes in terms of coating
Obtained good achievement.
There are many factor for influencing diamond film growth quality, which includes the distribution of reaction gas in deposition chambers and
Flowing.The tubular type disengaging gas mode taken in the past, be easy to cause air flow method uneven, is arranged in tracheae above heated filament frame also
It has been easy deposit and has generated and fall dust, particulate contamination.
Summary of the invention
For overcome the deficiencies in the prior art, the present invention provides a kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device
And method.
A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device, the upside angle position of circular cylindrical cavity is along 45 degree of angles
Air flap is welded, air flap and chamber top corner part form a closed inlet plenum, and air inlet, air inlet is distributed in gas baffle
Room connects air inlet, the indoor bottom connection electrode column of the vacuum chamber of circular cylindrical cavity, aspirating chamber, and aspirating chamber connects lifting spindle
And bleeding point, lifting spindle connect chip bench, electrode column connects heated filament, and aspirating chamber has pumping locular wall, aspirating chamber and lifting spindle
Between have a gap.
Along by-level direction tens apertures of uniform ground auger as air inlet on gas baffle；The quantity of air inlet is greater than 2.
Inlet plenum is admission line, and admission line is mounted on the top of circular cylindrical cavity, air inlet is distributed on admission line
Hole, the quantity of air inlet are greater than 2, and air inlet connects admission line.
Air inlet includes the first air inlet and the second air inlet.
A metal cap is welded in deposition chambers bottom, between electrode column and lifting spindle as pumping locular wall, is being evacuated
Deposition chambers bottom upper opening below locular wall is evacuated locular wall and aspirating chamber, pumping is formed on deposition chambers bottom as bleeding point
Gap just becomes the bleed-off passage of a uniform outlet between room and lifting spindle.
A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas circuit method, contains following steps；
Inlet plenum is installed in chemical vapor deposition stove chamber and aspirating chamber is used as buffering, it is equally distributed from inlet plenum
Air inlet gas inlet hole, the gap outlet between aspirating chamber and lifting spindle；
A cricoid air inlet is formed as air flap along 45 degree of welded corner joints, one piece of metal plate in chamber angle position
Room；
A draft hood, draft hood and deposition chambers bottom are welded between deposition chambers bottom, electrode column and lifting spindle
The space formed between portion, lifting spindle；
Tens apertures on inlet plenum baffle along the uniform ground auger in by-level direction are as air inlet；
It further include following steps；
In chamber outer wall upper opening as outer suction port, along the uniform ground auger tens in by-level direction on air flap
A aperture is as air inlet；
A metal cap is welded in deposition chambers bottom, between electrode column and lifting spindle as pumping locular wall, is being evacuated
Deposition chambers bottom upper opening below locular wall is evacuated locular wall and aspirating chamber, pumping is formed on deposition chambers bottom as bleeding point
Gap just becomes the bleed-off passage of a uniform outlet between room and lifting spindle.
Extraneous gas passes through the inlet plenum that air inlet enters chamber top first, passes through tens air inlet flowings after buffering
To above heated filament, finally gap enters aspirating chamber between aspirating chamber and lifting spindle, is pumped to deposit cavity from bleeding point after buffering
It is outdoor.
Inlet plenum and pumping building volume are far longer than air inlet and pumping seam, to keep air inlet and outlet highly uniform.
It is unevenly distributed it is an advantage of the invention that can solve reaction gas in hot-filament chemical vapor deposition equipment deposition chambers
Even problem, at the same be not easy to produce dust, particle falls to depositing base surface.Air inlet is compared very with air inlet chamber size
Small, air-flow is first full of in inlet plenum, then has stomata spilling, it is ensured that the flow of each air inlet is roughly the same.Equally, lower part
Aspirating chamber is more much bigger than suction slit, is also ensured that pumping is uniform.The inlet plenum on top due to welding together with water-cooling wall,
Cooling opposite tracheae is well very much, is not easy in upper formation deposit, would not also fall to growing substrate surface.
Detailed description of the invention
When considered in conjunction with the accompanying drawings, by referring to following detailed description, the present invention can be more completely and better understood with
And be easy to learn many adjoint advantages, but the drawings described herein are used to provide a further understanding of the present invention,
A part of the invention is constituted, the illustrative embodiments of the present invention and their descriptions are used to explain the present invention, does not constitute to this hair
Bright improper restriction is such as schemed wherein:
Fig. 1 is the structural diagram of the present invention.
Present invention will be further explained below with reference to the attached drawings and examples.
Specific embodiment
Obviously, those skilled in the art belong to guarantor of the invention based on many modifications and variations that spirit of the invention is done
Protect range.
Those skilled in the art of the present technique are appreciated that unless expressly stated, singular " one " used herein, " one
It is a ", " described " and "the" may also comprise plural form.It is to be further understood that being arranged used in specification of the invention
Diction " comprising " refer to that there are the feature, integer, step, operation, element and/or component, but it is not excluded that in the presence of or addition
Other one or more features, integer, step, operation, element, component and/or their group.It should be understood that when claiming element quilt
" connection " or when " coupled " to another element, it can be directly connected or coupled to other elements, or there may also be centres
Element.In addition, " connection " used herein or " coupling " may include being wirelessly connected or coupling.Wording used herein " and/
Or " it include one or more associated any cells for listing item and all combinations.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, all terms used herein (including technology art
Language and scientific term) there is meaning identical with the general understanding of those of ordinary skill in fields of the present invention.Should also
Understand, those terms such as defined in the general dictionary, which should be understood that, to be had and the meaning in the context of the prior art
The consistent meaning of justice, and unless defined as here, it will not be explained in an idealized or overly formal meaning.
In order to facilitate understanding of embodiments of the present invention, it is done by taking several specific embodiments as an example below in conjunction with attached drawing further
Explanation, and each embodiment does not constitute the restriction to the embodiment of the present invention.
Embodiment 1: as shown in Figure 1, a kind of hot-wire chemical gas-phase deposition furnace passes in and out gas gas path device, circular cylindrical cavity 16
Upside angle position forms a closed inlet plenum along 45 degree of welded corner joint air flaps 2, air flap 2 and chamber top corner part
12, air inlet is distributed in gas baffle 2, and air inlet includes the first air inlet 3 and the second air inlet 15, and inlet plenum 12 connects air inlet
4, bottom connection electrode column 6, aspirating chamber 13 in the vacuum chamber 1 of circular cylindrical cavity 16, aspirating chamber 13 connect 9 He of lifting spindle
Bleeding point 11, lifting spindle 9 connect chip bench 8, electrode column 6 connect heated filament 5, aspirating chamber 13 have pumping locular wall 7, aspirating chamber 13 with
There is a gap 10 between lifting spindle 9.
Inlet plenum 12 is admission line, and admission line is mounted on the top of circular cylindrical cavity 16, is distributed on admission line
N number of air inlet (N is integer) greater than 2, air inlet 4 connect admission line；
Along by-level direction tens apertures of uniform ground auger as air inlet on gas baffle 2；The quantity of air inlet is greater than
2,
A metal cap is welded in deposition chambers bottom, between electrode column 6 and lifting spindle 9 as pumping locular wall 7, is being taken out
Deposition chambers bottom upper opening below air chamber wall 7 is evacuated locular wall 7 and aspirating chamber is formed on deposition chambers bottom as bleeding point 11
13, gap 10 just becomes the bleed-off passage of a uniform outlet between aspirating chamber 13 and lifting spindle 9.
So far entirely disengaging gas gas circuit just completes: extraneous gas passes through first that air inlet 4 enters chamber top first
Inlet plenum 12 flow to 5 top of heated filament by tens air inlets after buffering, finally enters aspirating chamber 13 from gap 10, delay
It is pumped to outside deposition chambers after punching from bleeding point 11.
Embodiment 2: as shown in Figure 1, a kind of hot-wire chemical gas-phase deposition furnace passes in and out gas gas circuit method, contain following steps；
Inlet plenum is installed in chemical vapor deposition stove chamber and aspirating chamber is used as buffering, it is equally distributed from inlet plenum
Air inlet gas inlet hole, the gap outlet between aspirating chamber and lifting spindle；
A cricoid air inlet is formed as air flap 2 along 45 degree of welded corner joints, one piece of metal plate in chamber angle position
Room；
A draft hood, draft hood and deposition chambers are welded between deposition chambers bottom, electrode column 6 and lifting spindle 9
The space formed between bottom, lifting spindle 9；
Tens apertures on inlet plenum baffle along the uniform ground auger in by-level direction are as air inlet；
It further include following steps；
Hot-filament chemical vapor deposition equipment deposition chambers are usually cylindrical Double water-cooled structure, on chamber angle position edge
45 degree of welded corner joints, one piece of metal plate forms a closed inlet plenum 12, in chamber outer wall upper opening conduct as air flap 2
Outer suction port 4, along by-level direction tens apertures of uniform ground auger as air inlet on air flap 2；
A metal cap is welded in deposition chambers bottom, between electrode column 6 and lifting spindle 9 as pumping locular wall 7, is being taken out
Deposition chambers bottom upper opening below air chamber wall 7 is evacuated locular wall 7 and aspirating chamber is formed on deposition chambers bottom as bleeding point 11
13, gap 10 just becomes the bleed-off passage of a uniform outlet between aspirating chamber and lifting spindle.
So far entirely disengaging gas gas circuit just completes: extraneous gas passes through the air inlet that air inlet 4 enters chamber top first
Room 12 flow to 5 top of heated filament by tens air inlets after buffering, and finally gap 10 enters between aspirating chamber and lifting spindle
Aspirating chamber 13 is pumped to outside deposition chambers after buffering from bleeding point 11.
Due to being to be welded to connect with Double water-cooled chamber, the heat of heated filament radiation holds inlet plenum positioned at heated filament upper side very much
It easily conducts, does not allow to be also easy to produce the deposits such as dust on air inlet locular wall.And inlet plenum and pumping building volume are far longer than air inlet
Hole and pumping seam, to keep air inlet and outlet highly uniform.
Embodiment 3: the invention discloses a kind of hot-wire chemical gas-phase deposition furnaces to pass in and out gas gas circuit.Previous Hot Filament Chemical Vapor
The tubular type disengaging gas mode taken in cvd furnace, be easy to cause air flow method uneven, is arranged in gas circuit above heated filament frame also
It has been easy deposit and has generated and fall dust, particulate contamination.
To solve these problems, the present invention isolates an inlet plenum using chamber side top, and makes below chamber
Make an aspirating chamber 13 as buffering.Implement the present invention, can solve and reacted in hot-filament chemical vapor deposition equipment deposition chambers
The problem of gas is unevenly distributed, at the same be not easy to produce dust, particle falls to depositing base surface.
As described above, embodiments of the present invention are described in detail, as long as but essentially without this hair of disengaging
Bright inventive point and effect can have many deformations, this will be readily apparent to persons skilled in the art.Therefore, this
The variation of sample is also integrally incorporated within protection scope of the present invention.
Claims (2)
1. a kind of hot-wire chemical gas-phase deposition furnace passes in and out gas gas path device, it is characterised in that the upside angle position of circular cylindrical cavity
Along 45 degree of welded corner joint air flaps, air flap and chamber top corner part form a closed inlet plenum, and air flap is distributed with
Air inlet, inlet plenum connect air inlet, the indoor bottom connection electrode column of the vacuum chamber of circular cylindrical cavity, aspirating chamber, aspirating chamber
Lifting spindle and bleeding point are connected, lifting spindle connects chip bench, and electrode column connects heated filament, and aspirating chamber has pumping locular wall, is evacuated
There is a gap between room and lifting spindle, the inlet plenum and Double water-cooled chamber positioned at heated filament upper side are to be welded to connect；
Along by-level direction tens apertures of uniform ground auger as air inlet on air flap；
Air inlet includes the first air inlet and the second air inlet；
A metal cap is welded in deposition chambers bottom, between electrode column and lifting spindle as pumping locular wall, in pumping locular wall
Following deposition chambers bottom upper opening is evacuated locular wall and aspirating chamber is formed on deposition chambers bottom as bleeding point, aspirating chamber with
Gap just becomes the bleed-off passage of a uniform outlet between lifting spindle;Extraneous gas passes through air inlet first and enters chamber
The inlet plenum on top is flow to above heated filament after buffering by tens air inlets, finally enters aspirating chamber from a gap, is buffered
It is pumped to outside deposition chambers from bleeding point afterwards.
2. using a kind of a kind of hot-wire chemical gas of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device described in claim 1
Phase cvd furnace passes in and out gas gas circuit method, it is characterised in that contains following steps；
Inlet plenum is installed in chemical vapor deposition stove chamber and aspirating chamber is used as buffering, the equally distributed air inlet from inlet plenum
Gas inlet hole, the gap outlet between aspirating chamber and lifting spindle；
A cricoid inlet plenum is formed as air flap along 45 degree of welded corner joints, one piece of metal plate in chamber angle position；
It further include following steps；
In chamber outer wall upper opening as outer suction port, along by-level direction, uniform ground auger is tens small on air flap
Hole is as air inlet；
A metal cap is welded in deposition chambers bottom, between electrode column and lifting spindle as pumping locular wall, in pumping locular wall
Following deposition chambers bottom upper opening is evacuated locular wall and aspirating chamber is formed on deposition chambers bottom as bleeding point, aspirating chamber with
Gap just becomes the bleed-off passage of a uniform outlet between lifting spindle；
Extraneous gas passes through the inlet plenum that air inlet enters chamber top first, flow to heat by tens air inlets after buffering
Silk top, finally gap enters aspirating chamber between aspirating chamber and lifting spindle, is pumped to outside deposition chambers after buffering from bleeding point；
Inlet plenum and Double water-cooled chamber due to being located at heated filament upper side are to be welded to connect, and the heat of heated filament radiation is easy to transfer out
It goes, does not generate dust deposit on air inlet locular wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610528450.7A CN106191816B (en) | 2016-07-06 | 2016-07-06 | A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610528450.7A CN106191816B (en) | 2016-07-06 | 2016-07-06 | A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106191816A CN106191816A (en) | 2016-12-07 |
| CN106191816B true CN106191816B (en) | 2019-04-05 |
Family
ID=57464493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610528450.7A Active CN106191816B (en) | 2016-07-06 | 2016-07-06 | A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106191816B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702317A (en) * | 2016-12-14 | 2017-05-24 | 南昌欧菲显示科技有限公司 | Coating equipment |
| CN110423994A (en) * | 2019-08-10 | 2019-11-08 | 上海妙壳新材料科技有限公司 | A kind of diamond-like coating moves back membrane treatment appts and its application method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4044218B2 (en) * | 1998-08-28 | 2008-02-06 | 松下電器産業株式会社 | Plasma processing equipment |
| WO2004109761A2 (en) * | 2003-05-30 | 2004-12-16 | Aviza Technology Inc. | Gas distribution system |
| KR101246170B1 (en) * | 2011-01-13 | 2013-03-25 | 국제엘렉트릭코리아 주식회사 | Injection member used in manufacturing semiconductor device and plasma processing apparatus having the same |
| CN202181350U (en) * | 2011-07-29 | 2012-04-04 | 广州市德百顺电气科技有限公司 | Hot-filament chemical vapor deposition equipment |
| CN203238326U (en) * | 2013-03-26 | 2013-10-16 | 苏州圆芯光机电科技有限公司 | Chemical vapor deposition device for hot filaments |
| CN103774120B (en) * | 2013-12-31 | 2016-06-22 | 刘键 | A kind of even device of air for PECVD system |
| CN205062179U (en) * | 2015-07-29 | 2016-03-02 | 河源市璐悦自动化设备有限公司 | Large tracts of land diamond -like chemical vapor deposition coating film production line |
-
2016
- 2016-07-06 CN CN201610528450.7A patent/CN106191816B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106191816A (en) | 2016-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20200411350A1 (en) | Method and apparatus for substrate transfer and radical confinement | |
| CN106191816B (en) | A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method | |
| TWI414626B (en) | CVD reactor with slidable substrate carrier | |
| TWI632250B (en) | Pecvd apparatus and process | |
| TW565623B (en) | Temperature control system for process chamber | |
| CN103050363A (en) | Symmetric plasma process chamber | |
| US20030019428A1 (en) | Chemical vapor deposition chamber | |
| US20100081284A1 (en) | Methods and apparatus for improving flow uniformity in a process chamber | |
| US4623771A (en) | High-voltage transformer cooling assembly of microwave oven | |
| TW555900B (en) | Gas inlet device | |
| CN107304474A (en) | A kind of reaction chamber and semiconductor processing equipment | |
| CN103993293A (en) | Multi-chamber sprayer with temperature controller | |
| CN105239057B (en) | Microwave plasma CVD device | |
| TW201834550A (en) | Plasma chamber with tandem processing regions | |
| CN105655220B (en) | Device for processing inductive coupling plasmas | |
| CN113166939B (en) | Gas diffuser mounting plate for reducing particle generation | |
| EP3399069B1 (en) | Crucible for accommodating and heating material, and system comprising arranged crucible and heater | |
| CN205774793U (en) | A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device | |
| TW202230471A (en) | Thermally uniform deposition station | |
| CN108277479A (en) | PECVD device capable of controlling uniform and stable airflow | |
| US20180330933A1 (en) | Cooling devices and instruments including them | |
| CN103397308A (en) | Spray head used for MOCVD equipment | |
| CN104685312A (en) | Substrate firing device | |
| CN208151477U (en) | A kind of PECVD device of controllable air-flow uniform and stable | |
| CN208173561U (en) | Substrate board treatment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |