CN106185785B - A kind of MEMS and preparation method thereof, electronic installation - Google Patents
A kind of MEMS and preparation method thereof, electronic installation Download PDFInfo
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- CN106185785B CN106185785B CN201510217735.4A CN201510217735A CN106185785B CN 106185785 B CN106185785 B CN 106185785B CN 201510217735 A CN201510217735 A CN 201510217735A CN 106185785 B CN106185785 B CN 106185785B
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Abstract
The present invention relates to a kind of MEMS and preparation method thereof, electronic installation.Methods described includes step S1：Bottom wafers are provided, formed in the front of the bottom wafers fluted；Step S2：Top wafer is provided, the pre-buried tunnel formed with top wafer described in break-through on the top wafer；Step S3：The top wafer and the bottom wafers are engaged, wherein the pre-buried tunnel is located at the top of the groove, to form gas passage；Step S4：The top grinding wafer is thinned, to reduce the thickness of the top wafer；Step S5：Perform high temperature process steps.The pre-buried tunnel on the wafer of top can discharge the gas of expansion as gas passage in the present invention, to avoid by the very thin silicon bursting of the top wafer, improving the performance and yield of the MEMS.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to which a kind of MEMS and preparation method thereof, electronics fill
Put.
Background technology
With the continuous development of semiconductor technology, in the in the market of sensor (motion sensor) class product, intelligent hand
Machine, integrated CMOS and MEMS (MEMS) device have become most main flow, state-of-the-art technology, and with technology more
Newly, the developing direction of this kind of transmission sensors product is the smaller size of scale, the electric property of high quality and lower loss.
Wherein, microelectromechanical systems (MEMS) has in volume, power consumption, weight and in price fairly obvious excellent
Gesture, has developed a variety of different sensors so far, for example, pressure sensor, acceleration transducer, inertial sensor and
Other sensors.
In the MEMS preparation process, some MEMS with cavity, it is necessary to carry out wafer combination
(Bonding) and be thinned (Thinning) technique, when top wafer (Top Wafer) be thinned after, the top wafer by
To high-temperature technology, when gases are heated, they expand in the cavity, causes top wafer Si to come off the phenomenon of (Peeling) defect.
Therefore need to be improved further the preparation method of current MEMS, to eliminate above-mentioned various drawbacks.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in specific embodiment part
One step describes in detail.The Summary of the present invention is not meant to attempt to limit technical scheme claimed
Key feature and essential features, the protection domain for attempting to determine technical scheme claimed is not meant that more.
The present invention is in order to overcome the problem of presently, there are, there is provided a kind of preparation method of MEMS, including：
Step S1：Bottom wafers are provided, formed in the front of the bottom wafers fluted；
Step S2：Top wafer is provided, the pre-buried tunnel formed with top wafer described in break-through on the top wafer；
Step S3：The top wafer and the bottom wafers are engaged, wherein the pre-buried tunnel is positioned at described recessed
The top of groove, to form gas passage；
Step S4：The top grinding wafer is thinned, to reduce the thickness of the top wafer；
Step S5：Perform high temperature process steps.
Alternatively, methods described still further comprises：
Step S6：Invert the device obtained in the step S5；
Step S7：Back process is performed, is open with being formed at the back side of the bottom wafers, exposes the groove.
Alternatively, in the step S2, the pre-buried tunnel lateral direction and/or it is longitudinally disposed in the top wafer.
Alternatively, in the step S3, the pre-buried tunnel and the longitudinally disposed top wafer that laterally set
Crosspoint be located at the top of the groove.
Alternatively, in the step S2, the size in the pre-buried tunnel is 3-6um.
Alternatively, in the step S1, the opening size of the groove is 35-50um, depth 90-110um.
Alternatively, in the step S2, the top wafer selects silicon.
Present invention also offers a kind of MEMS being prepared based on above-mentioned method.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS.
The present invention is in order to solve problems of the prior art, there is provided a kind of method for preparing MEMS, in institute
State and form groove in method in the bottom wafers first, then offer top wafer, formed with pre- in the top wafer
Tunnel is buried, after the bottom wafers and the top wafer are combined, the pre-buried tunnel is located in the bottom wafers
The top of the groove, to form gas passage, due to the setting in the pre-buried tunnel, after high-temperature technology, bottom is brilliant
When gases are heated, they expand in groove in circle, and the pre-buried tunnel on the wafer of top now can be used as gas passage to expand
Gas discharge, to avoid by the very thin silicon bursting of the top wafer, improving the performance and yield of the MEMS.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, for explaining the device of the present invention and principle.In the accompanying drawings,
Fig. 1 a-1e are the preparation process schematic diagram of MEMS in the prior art；
Fig. 2 a-2e are the preparation process schematic diagram of MEMS described in the embodiment of the invention；
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention can be able to without one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, do not enter for some technical characteristics well known in the art
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in Ceng He areas may be exaggerated.From beginning to end
Same reference numerals represent identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, its can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
Person may have element or layer between two parties.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or when " being directly coupled to " other elements or layer, then element or layer between two parties is not present.It should be understood that although it can make
Various elements, part, area, floor and/or part are described with term first, second, third, etc., these elements, part, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish an element, part, area, floor or part with it is another
One element, part, area, floor or part.Therefore, do not depart from present invention teach that under, the first element discussed below, portion
Part, area, floor or part are represented by the second element, part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and by using so as to describe an element shown in figure or feature with
The relation of other elements or feature.It should be understood that in addition to the orientation shown in figure, spatial relationship term is intended to also include making
With the different orientation with the device in operation.For example, if the device upset in accompanying drawing, then, is described as " under other elements
Face " or " under it " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determining the feature, whole
Number, step, operation, the presence of element and/or part, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, part and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, this
Invention can also have other embodiment.
At present, the preparation method of the MEMS provides bottom wafers 101, at the bottom first as shown in Fig. 1 a-1e
The front of portion's wafer 101 forms groove pattern, as shown in Figure 1a.
Top wafer 102 is provided, and engaged with the bottom wafers 101, as shown in Figure 1 b.
Grinding reduces the thickness of the top wafer, as illustrated in figure 1 c to thin the top wafer.
High-temperature technology is performed, at a higher temperature, the gas in the groove of the bottom wafers, will by temperature expansion
The very thin silicon bursting of top wafer, as shown in Figure 1 d, wherein right figure is the SEM figures after the high-temperature technology.
Back technique is finally performed, as shown in fig. le.
Therefore in the prior art in the MEMS preparation process, it is necessary to carry out wafer combination with cavity
(Bonding) and be thinned (Thinning) technique, when top wafer (Top Wafer) be thinned after, the top wafer by
To high-temperature technology, top wafer Si can be caused to come off the phenomenon of (Peeling) defect.Therefore the system to current MEMS is needed
Preparation Method is improved further, to eliminate above-mentioned various drawbacks.
Embodiment 1
In order to solve problems of the prior art, the invention provides a kind of preparation method of MEMS, below
Methods described is described further with reference to accompanying drawing 2a-2e.
First, step 201 is performed, there is provided bottom wafers 201, and form groove on the front of the bottom wafers 201
Pattern.
Specifically, as shown in Figure 2 a, wherein the bottom wafers 201 comprise at least Semiconductor substrate, the semiconductor lining
Bottom can be at least one of following material being previously mentioned：Silicon, silicon-on-insulator (SOI), be laminated on insulator silicon (SSOI),
SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. are laminated on insulator.
Groove pattern is formed in the front of the bottom wafers 201, the method for being specifically form includes but is not limited to：Figure
Bottom wafers described in case, to form the groove pattern, such as the shape in the bottom wafers 201 in the bottom wafers
Into the photoresist layer of patterning, using the photoresist layer as bottom wafers 201 described in mask etch, with the bottom wafers
Form the groove pattern.
Wherein, the opening size of the groove pattern and depth are not limited to a certain number range, such as the groove
The opening size of pattern is 35-50um, depth 90-110um, and it is 40um, depth 100um to be chosen as opening size.
Alternatively, the thickness of the bottom wafers 201 is 400um.
Perform step 202, there is provided top wafer 202, formed with top wafer described in break-through on the top wafer
Pre-buried tunnel 203.
Specifically, as shown in Figure 2 b, the top wafer 202 can select the conventional material of this area in this step,
Such as silicon etc. can be selected.
Wherein, the top wafer 202 has larger thickness.
Pre-buried tunnel 203 is formed in the top wafer 202, wherein, top is brilliant described in the pre-buried break-through of tunnel 203
Circle, that is, penetrate the upper and lower surface of the top wafer.
Further, formed with the pre-buried tunnel 203 laterally and/or longitudinally set in the top wafer.Alternatively, institute
State the pre-buried transverse and longitudinal of tunnel 203 interlock be arranged in the top wafer, as shown in Fig. 2 b right figures, with follow-up step
In be used as gas passage.
Alternatively, the size in the pre-buried tunnel 203 is 3-6um, is chosen as 5um.
Further, it is possible to the pre-buried tunnel 203 is formed from method commonly used in the art, such as first at the top
The mask layer of patterning is formed on wafer, then using the mask layer as described in mask etch top wafer, with formed size compared with
The small pre-buried tunnel 203, the pre-buried tunnel 203 have larger depth-to-width ratio.
In this step, the method from deep reaction ion etching (DRIE) etches the top wafer, anti-in the depth
Answer and gas hexa-fluoride (SF is selected in ion etching (DRIE) step6) process gas is used as, apply radio-frequency power supply so that hexafluoro
SiClx reaction air inlet forms high ionization, and it is 20mTorr-8Torr that operating pressure is controlled in the etching step, and frequency power is
600W, 13.5MHz, Dc bias can the continuous control in -500V -1000V, ensure the needs of anisotropic etching, select
The etching photoresistance that deep reaction ion etching (DRIE) can keep very high selects ratio.Deep reaction ion etching (DRIE) system
System can select the conventional equipment of ability, it is not limited to a certain model.
Step 203 is performed, the top wafer and the bottom wafers are engaged, wherein 203, the pre-buried tunnel
In the top of the groove pattern, to be used as gas passage.
Specifically, as shown in Figure 2 c, the top wafer 202 is engaged with the bottom wafers 201, the bonding method
Eutectic bond or the bonding of the method for thermal bonding can be selected, to form the structure of one.
Before the engagement, it can also include carrying out prerinse to the bottom wafers 201, it is brilliant to improve the bottom
The Joint Properties of circle 201.Specifically, in this step with the hydrofluoric acid DHF of dilution (wherein comprising HF, H2O2And H2O) to institute
The surface for stating bottom wafers 201 carries out prerinse, wherein, the concentration of the DHF does not limit strictly, in the present invention preferably
HF:H2O2:H2O=0.1-1.5:1:5.
In addition, after cleaning step has been performed, methods described, which still further comprises, is done the bottom wafers 201
Dry processing.
Alternatively, the bottom wafers 201 are dried from isopropanol (IPA).
Wherein, the pre-buried tunnel 203 is located at the top of the groove pattern, and further, what is laterally set is described pre-buried
The crosspoint of tunnel 203 and the longitudinally disposed top wafer 202 be located at the top of the groove pattern, using swollen as discharge
The gas passage of flatulence body, as shown in Fig. 2 c right figures.
Step 204 is performed, the top grinding wafer is thinned, to reduce the thickness of the top wafer.
Specifically, as shown in Figure 2 d, the top wafer, wherein institute are thinned by grinding thinned method in this step
Various parameters commonly used in the art can be selected by stating the thinned parameter of grinding, it is not limited to a certain number range, herein not
Repeat again.
Step 205 is performed, performs high temperature process steps.
In this step, it is recessed in bottom wafers after high-temperature technology due to the setting in the pre-buried tunnel 203
By temperature expansion, the pre-buried tunnel 203 on the wafer of top can now be used as venthole will be swollen for gas in groove pattern
Swollen gas discharge, to avoid the very thin silicon bursting of the top wafer.
Step 206 is performed, inverts the device obtained in the step S5.
Specifically, as shown in Figure 2 e, the bottom wafers 201 are inverted first, so that the bottom wafers is face-up.
Then back process is performed, is open with being formed in the bottom wafers, exposes the groove pattern.
So far, the introduction of the correlation step of the MEMS preparation of the embodiment of the present invention is completed.After the above step,
Other correlation steps can also be included, here is omitted.Also, in addition to the foregoing steps, the preparation method of the present embodiment
Other steps can also be included among above-mentioned each step or between different steps, these steps can pass through existing skill
Various techniques in art realize that here is omitted.
The present invention is in order to solve problems of the prior art, there is provided a kind of method for preparing MEMS, in institute
State and form groove in method in the bottom wafers first, then offer top wafer, formed with pre- in the top wafer
Tunnel is buried, after the bottom wafers and the top wafer are combined, the pre-buried tunnel is located in the bottom wafers
The top of the groove, to form gas passage, due to the setting in the pre-buried tunnel, after high-temperature technology, bottom is brilliant
When gases are heated, they expand in groove in circle, and the pre-buried tunnel on the wafer of top now can be used as gas passage to expand
Gas discharge, to avoid by the very thin silicon bursting of the top wafer, improving the performance and yield of the MEMS.
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention, is specifically included following
Step：
Step S1：Bottom wafers are provided, formed in the front of the bottom wafers fluted；
Step S2：Top wafer is provided, the pre-buried tunnel formed with top wafer described in break-through on the top wafer；
Step S3：The top wafer and the bottom wafers are engaged, wherein the pre-buried tunnel is positioned at described recessed
The top of groove, to form gas passage；
Step S4：The top grinding wafer is thinned, to reduce the thickness of the top wafer；
Step S5：Perform high temperature process steps.
Embodiment 2
Present invention also offers a kind of MEMS, the MEMS is prepared into by the methods described in embodiment 1
Arrive, by the MEMS that methods described is prepared into due to the setting in the pre-buried tunnel, after high-temperature technology, bottom is brilliant
By temperature expansion, the pre-buried tunnel on the wafer of top can now lead to as gas for the gas in groove pattern in circle
The gas of expansion is discharged in road (venthole), to avoid, by the very thin silicon bursting of the top wafer, improving the MEMS devices
The performance and yield of part.
Embodiment 3
Present invention also offers a kind of electronic installation, including the MEMS described in embodiment 2.Wherein, semiconductor devices
For the MEMS described in embodiment 2, or the MEMS that preparation method according to embodiment 1 obtains.
The electronic installation of the present embodiment, can be mobile phone, tablet personal computer, notebook computer, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment, or
Any intermediate products for including the MEMS.The electronic installation of the embodiment of the present invention, due to having used above-mentioned MEMS devices
Part, thus there is better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member can also make more kinds of it is understood that the invention is not limited in above-described embodiment according to the teachings of the present invention
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (9)
1. a kind of preparation method of MEMS, including：
Step S1：Bottom wafers are provided, formed in the front of the bottom wafers fluted；
Step S2：Top wafer is provided, the pre-buried tunnel formed with top wafer described in break-through on the top wafer；
Step S3：The top wafer and the bottom wafers are engaged, wherein the pre-buried tunnel is located at the groove
Top, to form gas passage；
Step S4：The top grinding wafer is thinned after the top wafer and the bottom wafers are engaged, with
Reduce the thickness of the top wafer；
Step S5：High temperature process steps are performed after the top grinding wafer is thinned.
2. according to the method for claim 1, it is characterised in that methods described still further comprises：
Step S6：Invert the device obtained in the step S5；
Step S7：Back process is performed, is open with being formed at the back side of the bottom wafers, exposes the groove.
3. according to the method for claim 1, it is characterised in that in the step S2, the pre-buried tunnel lateral direction and/or
It is longitudinally disposed in the top wafer.
4. according to the method for claim 3, it is characterised in that in the step S3, the pre-buried tunnel that laterally sets
Road and the crosspoint in the longitudinally disposed pre-buried tunnel are located at the top of the groove.
5. according to the method for claim 1, it is characterised in that in the step S2, the size in the pre-buried tunnel is
3-6um。
6. according to the method for claim 1, it is characterised in that in the step S1, the opening size of the groove is
35-50um, depth 90-110um.
7. according to the method for claim 1, it is characterised in that in the step S2, the top wafer selects silicon.
A kind of 8. MEMS that method based on described in one of claim 1 to 7 is prepared.
9. a kind of electronic installation, including the MEMS described in claim 8.
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| US6326682B1 (en) * | 1998-12-21 | 2001-12-04 | Kulite Semiconductor Products | Hermetically sealed transducer and methods for producing the same |
| CN1787168A (en) * | 2005-10-11 | 2006-06-14 | 中国电子科技集团公司第二十四研究所 | Method for mfg. silicon film on silicon base substrate with deep slot pattern |
| CN101266176A (en) * | 2008-04-18 | 2008-09-17 | 中国科学院上海微***与信息技术研究所 | Si-Si bonding isolator upper silicon high-temperature pressure sensor chip and manufacture method |
| JP2010185867A (en) * | 2009-01-13 | 2010-08-26 | Yokogawa Electric Corp | Thermal conductivity detector |
| CN204031452U (en) * | 2014-08-26 | 2014-12-17 | 歌尔声学股份有限公司 | A kind of high temperature pad pasting and MEMS microphone being applied to MEMS microphone |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5559493B2 (en) * | 2009-06-19 | 2014-07-23 | デクセリアルズ株式会社 | Manufacturing method of small reactor |
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2015
- 2015-04-30 CN CN201510217735.4A patent/CN106185785B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6326682B1 (en) * | 1998-12-21 | 2001-12-04 | Kulite Semiconductor Products | Hermetically sealed transducer and methods for producing the same |
| CN1787168A (en) * | 2005-10-11 | 2006-06-14 | 中国电子科技集团公司第二十四研究所 | Method for mfg. silicon film on silicon base substrate with deep slot pattern |
| CN101266176A (en) * | 2008-04-18 | 2008-09-17 | 中国科学院上海微***与信息技术研究所 | Si-Si bonding isolator upper silicon high-temperature pressure sensor chip and manufacture method |
| JP2010185867A (en) * | 2009-01-13 | 2010-08-26 | Yokogawa Electric Corp | Thermal conductivity detector |
| CN204031452U (en) * | 2014-08-26 | 2014-12-17 | 歌尔声学股份有限公司 | A kind of high temperature pad pasting and MEMS microphone being applied to MEMS microphone |
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