CN106159073A - Light-emitting component and manufacture method thereof - Google Patents
Light-emitting component and manufacture method thereof Download PDFInfo
- Publication number
- CN106159073A CN106159073A CN201510195154.5A CN201510195154A CN106159073A CN 106159073 A CN106159073 A CN 106159073A CN 201510195154 A CN201510195154 A CN 201510195154A CN 106159073 A CN106159073 A CN 106159073A
- Authority
- CN
- China
- Prior art keywords
- layer
- conductive
- light
- semiconductor layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000010276 construction Methods 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 230000004888 barrier function Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000004020 luminiscence type Methods 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical group [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 173
- 238000005516 engineering process Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241001132374 Asta Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910001051 Magnalium Inorganic materials 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920013657 polymer matrix composite Polymers 0.000 description 1
- 239000011160 polymer matrix composite Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The open a kind of light-emitting component of the present invention and manufacture method thereof, this light-emitting component comprises: a conduction supports substrate, comprise a first surface, one relative to first surface second surface, one formed the first component of a conductive channel, a second component, a circular opening defined by first component and second component, circular opening is extended to second surface and by first surface and inserts the insulant of circular opening；One luminous laminated construction, comprise one there is one first semiconductor layer, semiconductor laminated and one first conductive layer of active layer that one second semiconductor layer and is positioned between the first semiconductor layer and the second semiconductor layer, electrically connect the first semiconductor layer or the second semiconductor layer and conductive channel；And a conductive binding layer, utilize conductive binding layer to engage luminous laminated construction in first surface.
Description
Technical field
The present invention relates to a kind of light-emitting component and manufacture method thereof, in more detail, relate to one and there is height
The light-emitting component of brightness.
Background technology
Light emitting diode (light-emitting diode, LED) is P-type semiconductor and N-type semiconductor institute group
The photoelectric cell become, releases light by the combination of P-N junction charge carriers, add have volume little,
The advantages such as low power consumption, life-span length, response speed are fast, are widely used for optical display, traffic
Livery, data storage device, communication device, illuminator and medical device etc..Existing light-emitting diodes
Tubular construction has horizontal configuration and Vertical Structure.In horizontal configuration and Vertical Structure luminescence two
In the pipe of pole, the front (exiting surface) of chip has electrode to cover so that go out light restricted, therefore develop by
Chip upside down so that the electrode surface structure that light penetrates via sapphire substrate face downwards, namely falls
Dress formula structure.Flip-over type structure light-emitting diode can be tied with the heat radiation in encapsulating structure by electrode or projection
Structure directly contacts, in addition to improving radiating effect, it is possible to save the processing technology such as routing, wire support.
Summary of the invention
It is an object of the invention to provide a kind of light-emitting component and manufacture method thereof, have especially with respect to one
There is the light-emitting component of high brightness.
For reaching above-mentioned purpose, the present invention provides a kind of light-emitting component, comprises: a conduction supports substrate, bag
Containing a first surface, one relative to first surface second surface, one form first of a conductive channel
Part, a second component, a circular opening defined by first component and second component, circular opening is by
One surface extends to second surface and and inserts the insulant of circular opening；One luminous laminated construction,
Comprise one there is one first semiconductor layer, one second semiconductor layer and is positioned at the first semiconductor layer and
Semiconductor laminated and one first conductive layer of the active layer between two semiconductor layers, electrical connection the first half is led
Body layer or the second semiconductor layer and conductive channel；And a conductive binding layer, utilize conductive binding layer to engage
Luminous laminated construction is in first surface.
The present invention provides a kind of method of manufacturing luminescent device, comprises: provide one have the first semiconductor layer,
Active layer and the second semiconductor layer luminous laminated construction in a growth substrate；Form one first joint
Layer is on luminous laminated construction；One is provided to have a first surface and relative to the of this first surface
The substrate on two surfaces, etches the first surface of this substrate to a degree of depth to form an annular enclosed groove；?
An insulant is filled in annular enclosed groove；Utilize engage the first bonding layer engage luminous laminated construction with
Substrate；By second surface by substrate attenuation to exposing insulant, form one the 3rd surface；And
3rd surface forms an electronic pads.
Accompanying drawing explanation
Fig. 1 is the light-emitting component cross section structure figure of first embodiment of the invention；
Fig. 2 A～Fig. 2 D, Fig. 3 A～Fig. 3 C and Fig. 4 A～Fig. 4 D are the system of first embodiment of the invention
Make the schematic diagram of method；
Fig. 5 A～Fig. 5 C is respectively the top view of the light-emitting component of second embodiment of the invention, cuts along AA '
The structure chart in face and the structure chart along BB ' cross section；
Fig. 6 is the light-emitting component cross section structure figure of third embodiment of the invention；
Fig. 7 is the light-emitting component cross section structure figure of fourth embodiment of the invention.
Symbol description
1,2,3,4: light-emitting component
5,6,7,8: luminous laminated construction
10,12: support substrate
100,200: the first conductive channel
300: the second conductive channels
101,102,102 ': surface
120: circular opening
120a: annular enclosed groove
60,601,602,603: insulating barrier
14: growth substrate
18a, 18b: electronic pads
20: semiconductor laminated
22: the first semiconductor layers
24: active layer
26: the second semiconductor layers
30: metal contact layer
32: opening
36: insulant
38: through hole
40,40 ': metal conducting layer
401,402: first, second conductive layer
403: electrode extended layer
46,46 ': conductive binding layer
50: protective layer
52: roughening structure
308: exposed region
Detailed description of the invention
Embodiments of the invention can be described in detail, and is drawn in accompanying drawing, same or similar portion
Branch occurs at each accompanying drawing and explanation with identical number.
Fig. 1 is the light-emitting component 1 cross section structure figure of first embodiment of the invention.As it is shown in figure 1, it is luminous
Element 1 has a luminous laminated construction 5, engages with a conductive binding layer 46 ' and is fixed on a support substrate
On 10.Luminous laminated construction 5, for example, light emitting diode laminated construction or laser laminated structure, comprise
Semiconductor lamination 20, comprises one first semiconductor layer 22,1 second semiconductor layer 26 and an activity
Layer 24 is between the first semiconductor layer 22 and one second semiconductor layer 26.First semiconductor layer 22 and
Second semiconductor layer 26 for example, can provide the clad (cladding layer) of carrier maybe can limit to current-carrying
The limiting layer (confinement layer) of son, makes electronics, hole combine with luminescence in active layer 24.
The material of the first semiconductor layer 22, active layer 24 and the second semiconductor layer 26 comprises more than one unit
Element, this element is selected from gallium (Ga), aluminum (Al), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), cadmium (Cd)
The semiconducting compound constituted with selenium (Se), such as AlxInyGa(1-x-y)N or AlxInyGa(1-x-y)P, its
In 0 x, y 1；(x+y)≦1.According to the material of active layer 24, semiconductor laminated 20 can send ripple
Green between 530nm and 570nm of long HONGGUANG between 610nm and 650nm, wavelength
Light, the wavelength blue light between 450nm and 490nm, or the nearly purple that wavelength is less than 400nm
Outer light (near UV) or ultraviolet light (UV), including wavelength UVA between 400nm and 315nm,
UVB between 315nm and 280nm, and the UVC of below 280nm.The knot of active layer 24
Structure can be single heterojunction structure, double-heterostructure, bilateral double-heterostructure, multiple quantum trap or quantum dot.
First semiconductor layer 22 is the most different with the second semiconductor layer 26, in the present embodiment, and the first quasiconductor
Layer 22 doped p type impurity, for p-type semiconductor layer, and the second semiconductor layer 26 adulterates p-type impurity,
For n-type semiconductor layer.The surface of the first semiconductor layer 22 has a current-diffusion layer (not shown), a gold medal
Belong to contact layer 30 and a selectively formed reflecting layer (not shown).One first conductive layer 401 is positioned at gold
Belong to the surface of contact layer 30, electrically connect the first semiconductor layer 22, and extend to support base in vertical direction
Plate 10.Having multiple through hole 38 in semiconductor laminated 20, through hole 38 is by removing the first quasiconductor
Layer 22 is formed with active layer 24, and makes part the second semiconductor layer 26 come out, and multiple second
Conductive layer 402 is arranged in multiple through hole 38, with through hole 38 bottom the second semiconductor layer of being exposed
26 connect.The quantity of through hole 38 and the second conductive layer 402 can be according to injection current size and electric current with setting
Purpose is disperseed to have different designs mode.Second semiconductor layer 26 is optional relative to the surface of active layer 24
Form to selecting property a roughening structure 52, light benefit in order to reduce total reflection to promote.First conductive layer
401 and second conductive layer 402 be preferably metal material, including but not limited to gold (Au), silver (Ag), copper
(Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), stannum (Sn), the alloy of above-mentioned material or
Its stack combinations.Having insulating barrier 60 on metal contact layer 30, insulating barrier 60 extends and covers multiple logical
Semiconductor laminated 20 sidewalls in hole 38 and the via bottoms of part, and it is arranged at the first conductive layer 401
With second between conductive layer 402, to guarantee the insulation between the first conductive layer 401 and the second conductive layer 402
Property.
Support that substrate 10 has a first surface 101 and relative to the second table of first surface 101
Face 102.Support that substrate 10 has a circular opening 120, first surface 101 extend to the second table
Face 102, it is one ring-type that circular opening refers to that this opening is overlooked by first surface 101 or second surface 102.
Ring-type can be the ring-type of annulus or other shapes, and such as square is ring-type.Surrounded by circular opening 120
The part for supporting substrate 10, by supporting the first surface 101 of substrate 10 or second surface 102
Etch downwards circular opening, retain the support substrate 10 in the middle of annular aperture 120.Circular opening 120
Inside being filled with insulant 36, when supporting that substrate 10 is conductive material, circular opening 120 is surrounded
Support that substrate 10 can form a conductive channel 100, and insulant 36 can make conductive channel 100 and prop up
Hold and reach to be electrically insulated between substrate 10.Support that the conductive material of substrate 10 is including but not limited to gallium phosphide
(GaP), silicon (Si), molybdenum (Mo), copper (Cu), other metal materials, metal alloy or Metal Substrate printing electricity
Road plate (Metal Core PCB；MCPCB).At the first surface 101 supporting substrate 10, there is conduction to connect
Close layer 46 ', in order to engage luminous laminated construction 5, and make luminous laminated construction 5 the first conductive layer 401,
Second conductive layer 402 electrically connects with conductive channel 100, support substrate 10 respectively.Conductive binding layer 46 '
It is preferably metal material, including but not limited to copper, gold, stannum, other metal or metal alloy materials.?
The second surface 102 holding substrate 10 is provided with the first electronic pads 18a and the second electronic pads 18b, in order to outward
Portion's power supply and/or component are electrically connected, it is possible to have heat sinking function.First electronic pads 18a is arranged
On the second surface 102 of conductive channel 100, the second electronic pads 18b be arranged at circular opening 120 with
On outer second surface 102.When supporting that substrate 10 for conductive material and imposes outside to light-emitting component 1
During voltage, be positioned at second surface 102 the first electronic pads 18a can via conductive channel 100, first lead
Electric layer 401 and metal contact layer 30 and the first semiconductor layer 22 form conducting；Similarly, the second electricity
Polar cushion 18b can be via supporting substrate 10, conductive binding layer 46 ' and multiple second conductive layer 402 and the
Two semiconductor layers 26 form conducting.Insulant 36 in circular opening 120 can ensure that the first electronic pads
Being electrically insulated between 18a and the second electronic pads 18b.Light-emitting component 1 separately has protective layer 50, covers
Second semiconductor layer 26 surface and the sidewall of luminous laminated construction 5, can protect semiconductor laminated 20 and
Luminous laminated construction 5.
In the present embodiment, by multiple through holes 38 and the setting of multiple second conductive layer 402, can make
Electric current is dispersed；The second surface 102 supporting substrate 10 all it is arranged at due to electronic pads 18a, 18b,
In addition to the joint processing technology making electronic pads 18a, 18b and exterior electrical components is easier, also have
Help the heat radiation of light-emitting component 1.(the i.e. second semiconductor layer 26 is relative to propping up for the exiting surface of light-emitting component 1
Hold the surface of substrate 10) cover without any electrode structure, the whole lighting efficiency of light-emitting component 1 can be promoted.
Fig. 2 A to Fig. 2 C, Fig. 3 A to Fig. 3 C and Fig. 4 A to Fig. 4 D are real according to the present invention first
Execute the manufacture method of example.Fig. 2 A to Fig. 2 C is the manufacture method of wherein luminous laminated construction 5.Such as figure
Shown in 2A, a growth substrate 14 forms semiconductor lamination 20 with extension processing technology, sequentially wraps
Containing one second semiconductor layer 26, active layer 24 and one first semiconductor layer 22, it is possible to forming the
A cushion (not shown) is formed in growth substrate 14, in order to reduce subsequent epitaxial system before two conductor layers 26
Make the lattice defect that technique is formed.The material of growth substrate 14 is including but not limited to sapphire
(sapphire), oxidation magnalium (MgAl2O4), lithium aluminate (LiAlO2), lithium gallium oxide (LiGaO2), gallium oxide
(Ga2O3), magnesium oxide (MgO), gallium nitride (GaN), GaAs (GaAs), carborundum (SiC) or silicon (Si)
Deng.Additionally, the surface of growth substrate 14 extension to be carried out can separately have pattern structure.Then, exist
The surface of the first semiconductor layer 22 is etched, to remove the first semiconductor layer 22 and active layer of part
24, expose the second semiconductor layer 26 and form multiple through hole 38.It follows that as shown in Figure 2 B,
Current-diffusion layer (not shown), metal contact layer 30 and/or choosing is formed on the surface of the first semiconductor layer 22
After forming to selecting property reflecting layer (not shown), above metal contact layer 30 and the side of multiple through hole 38
Wall forms insulating barrier 601.Insulating barrier 601 cover semiconductor laminated 20 in multiple through hole 38 sidewall,
Section bottom in through hole 38 and metal contact layer 30.Not by absolutely above the metal contact layer 30 of part
Edge layer 601 covers, and forms opening 32.Then, in the surface of opening 32, multiple through hole 38 with
And form a metal level 40 ' with metal coating processing technology above insulating barrier 601.Then, such as Fig. 2 C institute
Show, remove the metal level 40 ' beyond directly over opening 32 with gold-tinted processing technology, formed conductive layer 401,
Second conductive layer 402 and metal conducting layer 40.Then, as shown in Figure 2 D, at the first conductive layer 401
And form insulating barrier between the second conductive layer 402 again and constitute insulating barrier 602.Metal conducting layer 40 is follow-up
Processing technology will use as bonding layer, in opening 32 and the metal level of upper area is first to lead
Electric layer 401, the metal level in multiple through holes 38 is the second conductive layer 402.The manufacture method of the present embodiment
In, first conductive layer the 401, second conductive layer 402 with metal conducting layer 40 be as material, but this
Bright embodiment is not limited to this.Such as, in another embodiment, it is possible to use a metal material is at opening
32 and multiple through hole 38 in form first conductive layer 401 and the second conductive layer 402, this metal material
Ohmic contact can be formed, afterwards at first conductive layer the 401, second conductive layer with the second semiconductor layer 26
402 and insulating barrier 601 above with another metal material formed metal conducting layer 40.Metal conducting layer 40
To use as bonding layer in subsequent manufacturing processes, therefore material is optional with first/second conductive layer not
Same metal, including but not limited to gold, other metal laminated or other alloys.
Fig. 3 A to Fig. 3 C is according to the manufacture method supporting substrate 10 in first embodiment of the invention.As
Shown in Fig. 3 A, support that the first surface 101 of substrate 10 forms the degree of depth about with etching process one
The annular enclosed groove 120a of 200 μm, that is, this groove is by the first surface 101 supporting substrate 10
Vertical view is a closed circular, and this is ring-type can be the ring-type of an annulus or other shapes, and annular enclosed structure
Support substrate 10 in the middle of groove 120a maintains the most etched support substrate 10, in follow-up making work
Will be in order to form conductive channel 100 in skill.Then, as shown in Figure 3 B, on first surface 101 and
Annular enclosed groove 120a is formed insulant 36, makes insulant 36 fill to annular enclosed groove
In 120a.In the present embodiment, the mode of available rotary coating is on first surface 101 and ring-type
Insulant 36 is formed in closing groove 120a.Insulant 3036 can be pi (PI), benzo
Cyclobutane (BCB), cross fluorine Tetramethylene. (PFCB), magnesium oxide (MgO), Su8, epoxy resin (Epoxy),
Acrylic resin (Acrylic Resin), cyclic olefin polymer (COC), polymethyl methacrylate
(PMMA), polyethylene terephthalate (PET), Merlon (PC), Polyetherimide
(Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer), glass (Glass), aluminium oxide
(Al2O3), silicon oxide (SiOx), titanium oxide (TiO2), tantalum oxide (Ta2O5), silicon nitride (SiNx), spin coating
Glass (SOG), tetraethoxysilane (TEOS), Afluon (Asta) (MgF2) or the combination of above-mentioned material.Then,
As shown in Figure 3 C, retain the insulant 36 on annular enclosed groove 120a correspondence position, remove ring
Within shape closes the annular of groove 120a and outside insulant 36, and removing insulant 36
After support substrate 10 first surface 101 on form a metallic bond layer 46.If there is no member-retaining portion
Support substrate 10, but supporting substrate is formed circular open, and in circular open, inserting insulation
Material, this structure is easily generated bubble when filling glue material in circular open so that processing technology difficulty increases,
And if the excessive problem having supportive deficiency of round hole.Compared to the above-mentioned practice, the present embodiment retains
Part supports that substrate 100 is to form annular enclosed groove 120a, the width ratio of annular enclosed groove 120a
Round hole comes little, inserts insulant by rotary coating in narrower annular ditch groove 120a,
Can reach preferred spreadability, produced bubble during to avoid forming insulant in through hole, and make
The problems such as one-tenth insulating properties is the best.
Fig. 4 A to Fig. 4 D is according in first embodiment of the invention, by luminescence laminated construction 5 and support
Substrate 10 engages to be formed the manufacture method of light-emitting component 1.As shown in Figure 4 A, by luminescence laminated construction
5 be inverted so that it is the metal conducting layer 40 on surface and the first conductive layer 401 as bonding layer, and with support
Metallic bond layer 46 on substrate 10 engages, and in the present embodiment, wafer can be used to engage (Wafer
Bonding) mode, for example, metal-metal engage (Metal-Metal Bonding).Work is made engaging
In skill, need to by the first conductive layer 401 and support substrate 10 para-position in annular enclosed groove 120a, with
Reach to electrically conduct.Fig. 4 B is the corresponding joint supporting substrate 10 in this step with luminous laminated construction 5
The plane graph in face.After joint, insulating barrier 602 contacts with insulating barrier 36, metal conducting layer 40 and metal
Bonding layer 46 engages and forms conductive binding layer 46 '.Then, as shown in Figure 4 C, growth substrate 14 is removed,
Such as utilize laser lift-off (Laser Lift-Off) processing technology.Then, as shown in Figure 4 D, by quasiconductor
Lamination 20 is separated into multiple luminous laminated construction 5, additionally, the most optionally at luminous laminated construction 5
Roughening structure 52, and the surface at luminous laminated construction 5 is formed relative to the surface supporting substrate 10
And sidewall forms protective layer 50.Then, will support that substrate 10 is by the second surface 102 ' relative to composition surface
Carry out thinning, for example with lapping mode, make the second surface 102 ' of support substrate 10 be thinned to expose
Go out annular enclosed groove 120a, to form one the 3rd surface 102, the annular enclosed groove 120a exposed
I.e. define circular opening 120.And form the first electronic pads on the 3rd surface 102 of conductive channel 100
18a, and the 3rd surface 102 of the support substrate 10 outside annular enclosed groove opening 120 forms
Two electronic pads 18b.Finally, utilize other modes such as laser or diamond cutter by each luminous laminated construction 5 institute
Corresponding support substrate 10 is cut open, to form multiple light-emitting component 1 as shown in Figure 1.In this enforcement
In the manufacture method of example, it is possible to optionally the surface at luminous laminated construction 5 forms wavelength conversion layer (figure
Do not show), for example, fluorescent material or quanta point material.
In the present embodiment with its manufacture method, utilize in etching annular enclosed groove 120a and retaining
Between support that substrate 10 forms conductive channel 100, it is not necessary to additionally insert metal level as conductive channel, because of
This simplifies processing technology.Additionally, insert insulant 36 at annular enclosed groove 120a, can increase
The spreadability of insulant, it is ensured that the insulating properties between conductive channel 100 and support substrate 10.With conduction
Material is as supporting substrate, and the electric current of luminous laminated construction 5 can pass through conductive binding layer 46 ', support base
Plate 10 and conductive channel 100 conduct to first/second electronic pads 18a/18b, with outer member or power supply
Work links, and the exiting surface of light-emitting component 1 covers without any electrode.Electric current distribution in semiconductor laminated,
Can be reached by multiple through holes 38 and multiple second arranging of conductive layer 402, therefore reduce luminescence folded
Forward bias voltage drop (the forward voltage of Rotating fields 5；Vf), luminous efficiency and then lifting.
Fig. 5 A is the top view of the light-emitting component 2 of second embodiment of the invention, and Fig. 5 B and Fig. 5 C is respectively
For along AA ' cross section and the structure chart in BB ' cross section, upper seen it by the exiting surface of light-emitting component 2 depending on referring to.
As shown in Fig. 5 A～Fig. 5 C, light-emitting component 2 has a luminous laminated construction 6, with a conductive binding layer
46 ' joints are fixed on a support substrate 10.Support that substrate 10 is conductive material, have one and be filled with absolutely
The circular opening 120 of edge material 36, and the conductive channel 100 being positioned in circular opening 120, conduction
The second surface 102 of passage 100 with circular opening 120 outside support substrate 10 second surface set respectively
There is the second electronic pads 18b and the first electronic pads 18a.Support structure and the manufacture method of substrate 10 and this
Bright first embodiment is identical, therefore repeats no more.Luminous laminated construction 6 comprises semiconductor and folds 20, its
In there is an exposed region 308, exposed region 308 by removing part the first semiconductor layer 22 and active layer 24,
And expose part the second semiconductor layer 26 and formed.Electrode extended layer 403 is arranged at exposed region 308
In the second semiconductor layer 26 on, in insulating barrier 603 inserts exposed region 308 and cover electrode extended layer
403 with exposed region 308 in semiconductor laminated 20 sidewalls.Through hole 38 is positioned at exposed region 308,
Vertical Square is upward through insulating barrier 603 and is communicated to electrode extended layer 403.It is identical with first embodiment,
Being provided with the second conductive layer 402 in through hole 38, being connected with electrode extended layer 403 and can reach electrically conducts.
The second conductive layer 402 in through hole 38 extends and connected to conductive channel 100 in vertical direction, with
Two electronic pads 18b electrical connections.Have equally on first semiconductor layer 22 a current-diffusion layer (not shown),
One metal contact layer 30 and a reflecting layer (not shown).Conductive binding layer 46 ' is arranged at metal contact layer
On 30, engage with support substrate 10.Electric current can by the first electronic pads 18a, through support substrate 10 with
Conductive binding layer 46 ' is transferred to the first semiconductor layer 22, and is folded at quasiconductor by electrode extended layer 403
In layer 20 dispersed, then by the second semiconductor layer 26 through the second conductive layer 402 and conductive channel 100
It is transferred to the second electronic pads 18b.The therefore shape of exposed region 308 and electrode extended layer 403 and configuration,
Through hole 38 and the setting of the second conductive layer 402, can have different designs side according to size of current and dispersion purpose
Formula.Luminous laminated construction 6 is identical with first embodiment, the most not with the joint method supporting substrate 10
Repeat again.
Fig. 6 is the cross section structure figure of the light-emitting component 3 of third embodiment of the invention.As shown in Figure 6, send out
Optical element 3 has a luminous laminated construction 7, engages with a conductive binding layer 46 ' and is fixed on a support base
On plate 12.The structure of the luminous laminated construction 7 of the present embodiment is identical with first embodiment with manufacture method,
Therefore repeat no more.In the present embodiment, support that substrate 12 is non-conducting material, including but not limited to
Aluminium nitride (AlN), diamond, sapphire (sapphire), glass, pottery and polymer composite
(polymer matrix composite, PMC) etc..Support that substrate 12 has first surface 101 with relative
In the second surface 102 of first surface 101, one first conductive channel 200 and one second conductive channel 300
It is positioned in support substrate, first surface 101 extends to second surface 102 and run through support substrate 12.
First/second conductive channel 200/300 is formed opening by supporting substrate 12, and inserts conductive material
(such as metal) is formed.Conductive binding layer 46 ' be formed at luminous laminated construction 7 with support substrate 12 it
Between, connect and cover the second conductive channel 300, in order to engage with luminous laminated construction 7, similarly,
As described in the manufacture method of first embodiment, need to be by the first conductive layer 401 and first when engaging
Conductive channel 200 para-position.First electronic pads 18a and the second electronic pads 18b is arranged at second surface 102,
It is connected with the first conductive channel 200 and the second conductive channel 300 respectively.First semiconductor layer 22 can lead to
Cross metal contact layer the 30, first conductive layer 401 and the first conductive channel 200 and the first electronic pads 18a
Formation electrically conducts；Similarly, the second semiconductor layer 26 can pass through multiple second conductive layers 402, conduction
Bonding layer 46 ' and the second conductive channel 300 are formed with the second electronic pads 18b and electrically conduct.First leads
The quantity of electric channel 200 and the second conductive channel 300 is not limited to single, can be according to conduction or heat radiation purpose
Arrange multiple.First electronic pads 18a and the area of the second electronic pads 18b and configuration, it is possible to because of encapsulation knot
Structure, routing processing technology or heat radiation purpose and have different designs mode, the such as first electronic pads 18a and the
The area of two electronic pads 18b can be equal or unequal.
Fig. 7 is the sectional view of the light-emitting component 4 of fourth embodiment of the invention.As it is shown in fig. 7, luminous unit
Part 4 has a luminous laminated construction 8, engages with a conductive binding layer 46 ' and is fixed on a support substrate 12
On.The structure of the luminous laminated construction 8 of the present embodiment is identical with the second embodiment with manufacture method, and props up
Holding substrate 12 is non-conducting material, and its structure is identical with the 3rd embodiment with manufacture method, the most no longer
Repeat.Conductive binding layer 46 ' is arranged on metal contact layer 30, in order to engage luminous laminated construction 8 with
Supporting substrate 12, the second conductive layer 402 is connected with the second conductive channel 300.Consequently, it is possible to the first half
Conductor layer 22 is by metal contact layer 30, conductive binding layer 46 ' and the first conductive channel 200 and the
One electronic pads 18a electrical connection, the second semiconductor layer 26 is by the second conductive layer 402 and the second conduction
Passage 300 electrically connects with the second electronic pads 18b.
Above-described embodiment is only principle and effect thereof of illustrative subject application, not for limiting this
Application case.Having usually intellectual in any subject application art all can be without prejudice to the application
In the case of the know-why of case and spirit, above-described embodiment is modified and changes.Therefore the application
The rights protection scope of case is as listed by the claim enclosed.
Claims (11)
1. a light-emitting diode, comprises:
Conduction supports substrate, comprises:
First surface；
Second surface relative to this first surface；
First component, forms a conductive channel；
Second component；And
Defined a circular opening by this first component and this second component, by this first surface extend to this
Two surfaces；And
Insulant, inserts this circular opening；
Luminous laminated construction, comprises:
Have the first semiconductor layer, the second semiconductor layer and be positioned at this first semiconductor layer with this
Active layer between two semiconductor layers semiconductor laminated；And
First conductive layer, electrically connects this first semiconductor layer or this second semiconductor layer and leads to this conduction
Road；And
Conductive binding layer, utilizes this conductive binding layer to engage this luminescence laminated construction in this first table
Face.
2. light-emitting component as claimed in claim 1, also comprises the first electronic pads, is positioned at this conductive channel
This second surface, and the second electronic pads being separated from each other with this first electronic pads, be positioned at this second table
Face.
3. light-emitting component as claimed in claim 1, also comprises multiple through this first semiconductor layer and should
The through hole of active layer, has the second conductive layer in each through hole, electrically connect this second semiconductor layer and this conduction
Bonding layer, and wherein this first conductive layer electrically connects this first semiconductor layer and this conductive channel.
4. light-emitting component as claimed in claim 3, wherein this first conductive layer and this second conductive layer it
Between, and between this semiconductor laminated and this conductive binding layer, there is insulating barrier.
5. light-emitting component as claimed in claim 1, also comprises:
Through this first semiconductor layer and the through hole of this active layer, this first conductive layer is arranged at this through hole
In；And
Electrode extended layer, is positioned on this second semiconductor layer, and connects this first conductive layer.
6. light-emitting component as claimed in claim 5, wherein this light emitting diode stepped construction also comprises absolutely
Edge layer, covers the sidewall of this through hole.
7. light-emitting component as claimed in claim 1, wherein this conductive channel is identical with this support substrate
Material.
8. light-emitting component as claimed in claim 1, wherein the material of this support substrate is gallium phosphide
(GaP), silicon (Si), molybdenum (Mo), copper (Cu), metal material, metal alloy or metal base printed circuit board
(Metal Core PCB；MCPCB).
9. light-emitting component as claimed in claim 1, wherein this luminescence laminated construction is relative to this support base
The surface of plate has wavelength conversion layer.
10. light-emitting component as claimed in claim 1, wherein has reflecting layer on this first semiconductor layer.
11. 1 kinds of method of manufacturing luminescent device, comprise:
One luminous laminated construction is provided, comprises: the first semiconductor layer, active layer and the second semiconductor layer
In a growth substrate；
Form one first bonding layer, on this luminescence laminated construction；
Thering is provided a substrate, this substrate has first surface and the second surface relative to this first surface,
And etch this first surface of this substrate to a degree of depth to form an annular enclosed groove；
An insulant is filled in this annular enclosed groove；
This first bonding layer is utilized to engage this luminescence laminated construction and this substrate；
By this second surface by this substrate attenuation to exposing this insulant, form one the 3rd surface；With
And
An electronic pads is formed on the 3rd surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510195154.5A CN106159073B (en) | 2015-04-23 | 2015-04-23 | Light emitting element and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510195154.5A CN106159073B (en) | 2015-04-23 | 2015-04-23 | Light emitting element and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106159073A true CN106159073A (en) | 2016-11-23 |
| CN106159073B CN106159073B (en) | 2020-06-16 |
Family
ID=57348000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510195154.5A Active CN106159073B (en) | 2015-04-23 | 2015-04-23 | Light emitting element and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106159073B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910420A (en) * | 2017-12-19 | 2018-04-13 | 扬州科讯威半导体有限公司 | A kind of UV LED and preparation method |
| CN112204760A (en) * | 2020-01-02 | 2021-01-08 | 厦门市三安光电科技有限公司 | Light emitting device and light emitting apparatus |
| CN112420890A (en) * | 2019-08-21 | 2021-02-26 | 财团法人工业技术研究院 | Light emitting element and display device |
| WO2021110019A1 (en) * | 2019-12-02 | 2021-06-10 | 亿光电子工业股份有限公司 | Led light emitting device and manufacturing method therefor |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234371A (en) * | 2002-02-08 | 2003-08-22 | Seiko Instruments Inc | Mounting structure for semiconductor device |
| CN1768434A (en) * | 2003-03-28 | 2006-05-03 | 吉尔科有限公司 | LED power package |
| CN1791975A (en) * | 2003-03-21 | 2006-06-21 | 西雷克斯微***股份有限公司 | Electrical connections in substrates |
| US20060145362A1 (en) * | 2005-01-06 | 2006-07-06 | Chin-Huang Chang | Semiconductor package and fabrication method of the same |
| CN1811558A (en) * | 2005-01-26 | 2006-08-02 | 三星电子株式会社 | Two-dimensional light source using light emitting diode and liquid crystal display device using the two-dimensional light source |
| CN101292344A (en) * | 2005-08-19 | 2008-10-22 | 霍尼韦尔国际公司 | Single crystal based through the wafer connections |
| CN201265758Y (en) * | 2008-07-01 | 2009-07-01 | 研晶光电股份有限公司 | Improved LED structure |
| CN102208363A (en) * | 2011-05-13 | 2011-10-05 | 中国科学院微电子研究所 | Method for forming through silicon vias (TSV) |
| US20120126420A1 (en) * | 2010-11-19 | 2012-05-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor device having conductive vias and semiconductor package having semiconductor device |
| CN103887418A (en) * | 2012-12-22 | 2014-06-25 | 鸿富锦精密工业（深圳）有限公司 | Luminous chip combination |
| CN104269488A (en) * | 2014-10-21 | 2015-01-07 | 江苏稳润光电有限公司 | High-reliability LED packaging structure and method |
-
2015
- 2015-04-23 CN CN201510195154.5A patent/CN106159073B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234371A (en) * | 2002-02-08 | 2003-08-22 | Seiko Instruments Inc | Mounting structure for semiconductor device |
| CN1791975A (en) * | 2003-03-21 | 2006-06-21 | 西雷克斯微***股份有限公司 | Electrical connections in substrates |
| CN1768434A (en) * | 2003-03-28 | 2006-05-03 | 吉尔科有限公司 | LED power package |
| US20060145362A1 (en) * | 2005-01-06 | 2006-07-06 | Chin-Huang Chang | Semiconductor package and fabrication method of the same |
| CN1811558A (en) * | 2005-01-26 | 2006-08-02 | 三星电子株式会社 | Two-dimensional light source using light emitting diode and liquid crystal display device using the two-dimensional light source |
| CN101292344A (en) * | 2005-08-19 | 2008-10-22 | 霍尼韦尔国际公司 | Single crystal based through the wafer connections |
| CN201265758Y (en) * | 2008-07-01 | 2009-07-01 | 研晶光电股份有限公司 | Improved LED structure |
| US20120126420A1 (en) * | 2010-11-19 | 2012-05-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor device having conductive vias and semiconductor package having semiconductor device |
| CN102208363A (en) * | 2011-05-13 | 2011-10-05 | 中国科学院微电子研究所 | Method for forming through silicon vias (TSV) |
| CN103887418A (en) * | 2012-12-22 | 2014-06-25 | 鸿富锦精密工业（深圳）有限公司 | Luminous chip combination |
| CN104269488A (en) * | 2014-10-21 | 2015-01-07 | 江苏稳润光电有限公司 | High-reliability LED packaging structure and method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910420A (en) * | 2017-12-19 | 2018-04-13 | 扬州科讯威半导体有限公司 | A kind of UV LED and preparation method |
| CN112420890A (en) * | 2019-08-21 | 2021-02-26 | 财团法人工业技术研究院 | Light emitting element and display device |
| CN112420890B (en) * | 2019-08-21 | 2022-04-05 | 财团法人工业技术研究院 | Light emitting element and display device |
| WO2021110019A1 (en) * | 2019-12-02 | 2021-06-10 | 亿光电子工业股份有限公司 | Led light emitting device and manufacturing method therefor |
| CN112204760A (en) * | 2020-01-02 | 2021-01-08 | 厦门市三安光电科技有限公司 | Light emitting device and light emitting apparatus |
| WO2021134748A1 (en) * | 2020-01-02 | 2021-07-08 | 厦门市三安光电科技有限公司 | Light-emitting apparatus and light-emitting device |
| US20210320233A1 (en) * | 2020-01-02 | 2021-10-14 | Xiamen Sanan Optoelectronics Technology Co., Ltd | Light-emitting device and illuminating apparatus comprising the same |
| CN112204760B (en) * | 2020-01-02 | 2022-05-27 | 厦门市三安光电科技有限公司 | Light emitting device and light emitting apparatus |
| CN114883473A (en) * | 2020-01-02 | 2022-08-09 | 厦门市三安光电科技有限公司 | Light emitting device and light emitting apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106159073B (en) | 2020-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI758402B (en) | Light-emitting device | |
| US9905733B2 (en) | Light-emitting device | |
| KR100845856B1 (en) | LED package and method of manufacturing the same | |
| US7525248B1 (en) | Light emitting diode lamp | |
| US8384115B2 (en) | Bond pad design for enhancing light extraction from LED chips | |
| EP2722899B1 (en) | Light emitting device | |
| CN108063173A (en) | Light emitting element and method for manufacturing the same | |
| CN101877380B (en) | Luminescent device, light emitting device package and comprise the illuminator of this encapsulation | |
| KR102175345B1 (en) | Light emitting device and lighting system | |
| CN106159073A (en) | Light-emitting component and manufacture method thereof | |
| CN108040503A (en) | Light-emitting component and the light-emitting element package with the light-emitting component | |
| CN110021691B (en) | Semiconductor light emitting device | |
| CN106299072A (en) | Light-emitting diode chip for backlight unit | |
| KR102163956B1 (en) | Light emitting device and lighting system | |
| CN105489722B (en) | Light-emitting diode encapsulation structure, LED crystal particle and its manufacturing method | |
| CN106299073B (en) | LED wafer and forming method thereof | |
| CN106206902B (en) | Light-emitting diode chip for backlight unit | |
| TWI657593B (en) | Light-emitting device and the manufacturing method thereof | |
| KR102200000B1 (en) | Light emitting device and lighting system | |
| KR20170036292A (en) | Semiconductor light emitting device and method of manufacturing the same | |
| CN108630720B (en) | Light emitting diode array | |
| KR20190056133A (en) | Semiconductor device | |
| KR102153125B1 (en) | Light emitting device and lighting system | |
| KR102181429B1 (en) | Light emitting device and lighting system | |
| CN217387195U (en) | Flip-chip type MICROLED chip structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |