CN106158995B - Hide grid photovoltaic cell component, processing method and photovoltaic system - Google Patents
Hide grid photovoltaic cell component, processing method and photovoltaic system Download PDFInfo
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- CN106158995B CN106158995B CN201610774327.3A CN201610774327A CN106158995B CN 106158995 B CN106158995 B CN 106158995B CN 201610774327 A CN201610774327 A CN 201610774327A CN 106158995 B CN106158995 B CN 106158995B
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- 210000003850 cellular structure Anatomy 0.000 title claims abstract description 56
- 238000003672 processing method Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 117
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 117
- 239000010703 silicon Substances 0.000 claims abstract description 117
- 239000013078 crystal Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 238000009792 diffusion process Methods 0.000 claims abstract description 53
- 210000001142 back Anatomy 0.000 claims abstract description 23
- 210000004027 cell Anatomy 0.000 claims abstract description 21
- 230000010363 phase shift Effects 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims description 26
- 238000002161 passivation Methods 0.000 claims description 26
- 235000008216 herbs Nutrition 0.000 claims description 14
- 210000002268 wool Anatomy 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 10
- 230000009466 transformation Effects 0.000 abstract description 18
- 239000000463 material Substances 0.000 description 11
- 230000005611 electricity Effects 0.000 description 6
- 244000141353 Prunus domestica Species 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention discloses one kind to hide grid photovoltaic cell component, processing method and photovoltaic system, the Tibetan grid photovoltaic cell component includes crystal silicon substrate, is arranged at the conductive diffusion layer of crystal silicon upper surface of substrate and is arranged at the conductive dorsum electrode layer of crystal silicon substrate lower surface, multiple grid lines are embedded with below the surface of wherein described diffusion layer, the photovoltaic system includes optics phase shift plate and described Tibetan grid photovoltaic cell component, and the optics phase shift plate is located at the oblique upper of the Tibetan grid photovoltaic cell component.The present invention hides grid photovoltaic cell component, processing method and photovoltaic system can be hidden below the surface of photovoltaic cell grid line, photovoltaic cell surface is set not have grid line to keep the sun off, the light-receiving area of photovoltaic cell is added, improves the photoelectric transformation efficiency of photovoltaic cell.
Description
Technical field
The present invention relates to field of photovoltaic technology, and in particular to one kind hides grid photovoltaic cell component, processing method and photovoltaic system
System.
Background technology
Energy problem has been global problem, and the chemical energy source and nuclear power source that we use now are not clean energy resourcies, together
Shi Xianyou can exploit the energy can not also maintain the sustainable development of the mankind, make full use of solar energy to turn into a kind of inexorable trend.
The many technologies of human development utilize solar energy, and technology maturation and have been used for the mainly silicon-based photovoltaic solar components to generate electricity
（Call photovoltaic module in the following text）, solar energy source clean environment firendly, but the photoelectric transformation efficiency of the photovoltaic module is too low, cost is too high, this
Its development is hampered with regard to many-side.
In order to increase the generated energy of the photovoltaic module, people have carried out unremitting effort since half a century, have carried out nothing
Examination is repaid for several times, but does not have substantial progress all the time, and conversion ratio is always in below 17%-22%.And the price of the photovoltaic module is very high,
The price of present photovoltaic electric is more than every watt of 0.9 RMB.Improve photovoltaic component parts conversion efficiency and reduce the valency of photovoltaic module
Lattice, it is the present inventor's problem to be solved.
As shown in figure 1, silicon-based photovoltaic cells of the prior art include conductive diffusion layer 1 ', crystalline substance from top to bottom
Silicon base 2 ' and dorsum electrode layer 3 ', the upper surface of wherein diffusion layer 1 ' are provided with grid line layer, grid line layer include it is parallel, uniform,
Every multiple grid lines 4 ' of setting, when silicon-based photovoltaic cells work, sunshine is directly incident from grid line layer, and passes through multiple grid lines
4 ' reach crystal silicon substrate 2 ' and dorsum electrode layer 3 ' with diffusion layer 1 ', and diffusion layer 1 ' contacts to form P-N junction area, P- with crystal silicon substrate 2 '
N interfaces produce multiple electron-hole pairs under the exciting of sunshine, and electron hole pair is separated under electrostatic potential energy effect and difference
Moved to dorsum electrode layer 3 ' and grid line layer, can be to electrical equipment when being connected grid line layer with dorsum electrode layer 3 ' by wire
It is powered.
Because grid line layer of the prior art is arranged at the upper surface of diffusion layer 1 ', therefore when sunlight silicon-based photovoltaic electricity
During the upper surface in pond, a part of sunlight can be blocked by grid line layer, and the photon for causing to be irradiated into from the upper surface of diffusion layer 1 ' is reduced,
The electron-hole pair for causing P-N junction area to inspire is reduced so that and electricity conversion is not high, and if reducing setting for grid line 4 '
Put, the photoelectricity that the Pair production that the life-span only had for 10 nanoseconds can again cannot effectively absorb and reduce silicon-based photovoltaic cells turns
Change efficiency.Limit the extensive use of silicon-based photovoltaic cells.And existing silicon-based photovoltaic cells must have grid line to collect electronics
The electricity that sunlight could be converted transports out, and sunlight has been blocked in the upper surface that grid line 4 ' is arranged at diffusion layer 1 ', causes sun
The waste of illuminance.
The content of the invention
It is an object of the invention to provide one kind to hide grid photovoltaic cell components, processing method and photovoltaic system, and it can be
Grid line is hidden below the surface of photovoltaic cell, makes photovoltaic cell surface not have grid line to keep the sun off, adds photovoltaic cell
Light-receiving area, improve the photoelectric transformation efficiency of photovoltaic cell.
In order to achieve the above object, the present invention provide it is a kind of hide grid photovoltaic cell component, including crystal silicon substrate, be arranged at crystalline substance
The conductive diffusion layer of silicon base upper surface and the conductive dorsum electrode layer of crystal silicon substrate lower surface is arranged at, its
Described in diffusion layer surface below be embedded with multiple grid lines.
Preferably, the upper surface of the diffusion layer offers multiple extending crystal silicon base internal and favours crystal silicon base
The first of bottom upper surface hides grid groove, and described diffusion layer is provided with the crystal silicon upper surface of substrate and each first Tibetan grid groove,
Each hidden bottom land that grid groove is hidden located at each first of grid line difference.
Preferably, in addition to be embedded in diffusion layer surface below at least one main gate line.
Preferably, the upper surface of the diffusion layer offers at least one extending crystal silicon base internal and favours crystalline substance
The second of silicon base upper surface hides grid groove, is provided with diffusion layer in the grid groove of second Tibetan, each main gate line distinguishes hidden be located at
Each second hides the bottom land of grid groove.
Preferably, chamfering Passivation Treatment is passed through at first Tibetan grid groove, the openend wedge angle position of the second Tibetan grid groove.
Preferably, the equal making herbs into wool passivation in the upper and lower surface of the crystal silicon substrate.
Preferably, the lower surface of the dorsum electrode layer is provided with reflector layer.
A kind of processing method of Tibetan grid photovoltaic cell component described in basis, it comprises the following steps：
（1）The upper and lower surface of crystal silicon substrate is distinguished into making herbs into wool to be passivated to form double mattes；
（2）In step（1）Obtained crystal silicon upper surface of substrate makes multiple first and hides grid groove, makes described first to hide grid groove phase
For crystal silicon upper surface of substrate into being obliquely installed, the openend wedge angle position for each described first being hidden grid groove is blunt by chamfering
Change is handled；
（3）Coating process is diffused with inwall of the conductive material in the crystal silicon substrate and the first Tibetan grid groove, makes step
Suddenly（2）Diffusion layer is obtained comprehensively in each first Tibetan grid groove of obtained crystal silicon substrate, forms continuous photovoltaic cell comprehensively
PN junction, coating process is carried out in the lower surface of crystal silicon substrate with conductive material, dorsum electrode layer is made, grid photovoltaic is hidden so as to be made
Battery component.
Preferably, the step（2）In be additionally included in obtained crystal silicon upper surface of substrate and make at least one second and hide grid
Groove, make the second Tibetan grid groove relative to crystal silicon upper surface of substrate into being obliquely installed, the openend for described second being hidden grid groove is sharp
Do chamfering Passivation Treatment, the step in angular position（3）Middle increase is diffused coating process in the second Tibetan grid groove inwall, makes each institute
State the first Tibetan grid groove, second Tibetan grid groove in obtain diffusion layer comprehensively.
A kind of photovoltaic system, it includes optics phase shift plate and described Tibetan grid photovoltaic cell component, the optics phase shift plate
Located at the oblique upper of the Tibetan grid photovoltaic cell component.
After such scheme, the present invention hides grid photovoltaic cell component, processing method and photovoltaic system with beneficial below
Effect：
1st, by the way that grid line or grid line and main gate line is hidden below the surface of diffusion layer, so in Tibetan grid photovoltaic cell group
The surface of part does not have grid line or grid line to be kept the sun off with main gate line, adds the light-receiving area of battery component, improves the battery
The photoelectric transformation efficiency of component；
2nd, grid groove and second is hidden by the wedge angle position or first that cut the first Tibetan grid channel opening end and hides grid channel opening end
Wedge angle position, these openends is carried out chamfering Passivation Treatment, more photoproduction current-carrying can be so produced without wedge angle
Son, improve photoelectric transformation efficiency；
3rd, for the sunlight of red light region, the Tibetan grid photovoltaic cell component is transparent, by crystal silicon substrate
Upper and lower surface carries out making herbs into wool passivation design, ensures that light as much as possible is injected in crystal silicon substrate, and by dorsum electrode layer
Lower surface sets reflector layer, can reflect the sunlight through the escape of crystal silicon substrate, to avoid the waste of sunlight；
4th, grid line or grid line and main gate line brush system are not sintered in expansion by the processing method of present invention Tibetan grid photovoltaic cell component
The upper surface of layer is dissipated, and by setting the first Tibetan grid groove or the first Tibetan grid groove and the second Tibetan grid groove to make grid line or grid line and master respectively
Grid line is hidden below the surface of diffusion layer, so avoids grid line or grid line and is arranged on photovoltaic cell component with main gate line
Surface shield to caused by sunlight, relatively common photovoltaic cell add illuminating area of the sunlight to photovoltaic cell, the opposing party
Face, the laying ratio of grid line can be increased, allow more photoproduction current-carrying it is compound it is preceding caught by grid line, make photovoltaic cell component
Photoelectric transformation efficiency is further enhanced, and its simple and convenient processing method is ingenious；
5th, photovoltaic system of the present invention so sets and added by the way that optics phase shift plate is combined with hiding grid photovoltaic cell component
The illuminating area of grid photovoltaic cell component is hidden, thus also increases photoelectric transformation efficiency, while by optics phase shift plate another
One times of sunlight, which is added to, to be hidden on grid photovoltaic cell component, the generated energy of photovoltaic system is obtained significant increase, and its cost reduces,
The utilization rate and photoelectric transformation efficiency of photovoltaic material are improved.
Brief description of the drawings
Fig. 1 is the structural representation of existing silicon-based photovoltaic cells；
Fig. 2 is the structural representation of embodiment one that the present invention hides grid photovoltaic cell component；
Fig. 3 is the structural representation of embodiment two that the present invention hides grid photovoltaic cell component；
Fig. 4 is the structural representation of embodiment three that the present invention hides grid photovoltaic cell component；
Fig. 5 is the example IV structural representation that the present invention hides grid photovoltaic cell component；
Fig. 6 is the structural representation of embodiment one of photovoltaic system of the present invention.
Embodiment
With reference to Figure of description, the present invention will be further described.
The present invention hides the structural representation of embodiment one of grid photovoltaic cell component as shown in Figure 2, including crystal silicon substrate 1, sets
It is placed in the upper surface of crystal silicon substrate 1 and diffusion layer 2 and is arranged at the lower surface of crystal silicon substrate 1 by electric conductivity material made of conductive material
Dorsum electrode layer 3 made of material, the upper surface of diffusion layer 2, which offers, multiple to be extended inside crystal silicon substrate 1 and favours crystal silicon
The first of the upper surface of substrate 1 hides grid groove 4, and the first Tibetan grid groove 4 can be linear or circular arc or L-shaped or circle, the present embodiment
First Tibetan grid groove 4 is linear.Multiple first hide grid groove 4 in parallel, uniform, interval setting.The upper surface of crystal silicon substrate 1 and each
Diffusion layer 2 is provided with first Tibetan grid groove 4, grid line 5 is made of an electrically conducting material, and the fusing point of conductive material is molten higher than silicon
Point.Each grid line 5 is respectively arranged in each first bottom land for hiding grid groove 4.The first of the present embodiment hide the bottom land of grid groove 4 with it is each corresponding
The shape of grid line 5 matches.
The first Tibetan grid groove 4 can also be directly opened in diffusion layer 2 in the embodiment, be not extend to crystal silicon substrate 1, equally
First Tibetan grid groove 4 is arranged to the groove being obliquely installed with the upper surface of crystal silicon substrate 1, is also the scope of protection of the invention.
In use, multiple grid lines 5 to be respectively arranged in the bottom land that first be respectively obliquely installed hides grid groove 4, work as sunlight
At the upper surface of the photovoltaic cell component, because the upper surface of diffusion layer 2 does not have grid line 5 to keep the sun off, photovoltaic is increased
The light-receiving area of battery component, improve the photoelectric transformation efficiency of photovoltaic cell component.
The present invention hides the structural representation of embodiment two of grid photovoltaic cell component as shown in Figure 3, including crystal silicon substrate 1, sets
It is placed in the upper surface of crystal silicon substrate 1 and diffusion layer 2 and is arranged at the lower surface of crystal silicon substrate 1 by electric conductivity material made of conductive material
Dorsum electrode layer 3 made of material, the upper and lower surface of crystal silicon substrate 1 form double mattes by making herbs into wool Passivation Treatment.Diffusion
Layer 2 upper surface offer it is multiple extend it is crystal silicon substrate 1 inside and favour the upper surface of crystal silicon substrate 1 first Tibetan grid groove
4, the first Tibetan grid groove 4 can be linear or circular arc or L-shaped or circle, and it is linear that the present embodiment first, which hides grid groove 4,.It is multiple
First hides grid groove 4 in parallel, uniform, interval setting.Chamfering passivation is done in the wedge angle position of the openend of each first Tibetan grid groove 4
Processing, that is, prune wedge angle position.Thin grid line 5 is embedded with respectively in each first Tibetan grid groove 4.The upper surface of crystal silicon substrate 1 and each
Diffusion layer 2 is provided with first Tibetan grid groove 4, grid line 5 is made of an electrically conducting material, and the fusing point of conductive material is molten higher than silicon
Point.Each grid line 5 is respectively arranged in each first bottom land for hiding grid groove 4.The first of the present embodiment hide the bottom land of grid groove 4 with it is each corresponding
The shape of grid line 5 matches.
In use, multiple grid lines 5 to be respectively arranged in the bottom land that first be respectively obliquely installed hides grid groove 4, work as sunlight
At the upper surface of the photovoltaic cell component, because the upper surface of diffusion layer 2 does not have grid line 5 to keep the sun off, photovoltaic is increased
The light-receiving area of battery component, improve the photoelectric transformation efficiency of photovoltaic cell component.And by first being hidden the opening of grid groove 4
The wedge angle position at end carries out chamfering Passivation Treatment, that is, cuts the tip of the first Tibetan grid groove 4.So tip becomes thicker shape
Shape.More photo-generated carrier can be produced, further increases photoelectric transformation efficiency, and by by the upper and lower of crystal silicon substrate 1
Surface carries out making herbs into wool Passivation Treatment, ensures that light as much as possible is injected in crystal silicon substrate 1, improves photoelectric transformation efficiency.
The present invention hides the structural representation of embodiment three of grid photovoltaic cell component as shown in Figure 4, including crystal silicon substrate 1, sets
It is placed in the upper surface of crystal silicon substrate 1 and diffusion layer 2 and is arranged at the lower surface of crystal silicon substrate 1 by electric conductivity material made of conductive material
Dorsum electrode layer 3 made of material, the upper and lower surface of crystal silicon substrate 1 form double mattes by making herbs into wool Passivation Treatment.Diffusion
Layer 2 upper surface offer it is multiple extend it is crystal silicon substrate 1 inside and favour the upper surface of crystal silicon substrate 1 first Tibetan grid groove
4, the first Tibetan grid groove 4 can be linear or circular arc or L-shaped or circle, and it is linear that the present embodiment first, which hides grid groove 4,.It is multiple
First hides grid groove 4 in parallel, uniform, interval setting.Chamfering passivation is done in the wedge angle position of the openend of each first Tibetan grid groove 4
Processing, that is, prune wedge angle position.Thin grid line 5 is embedded with respectively in each first Tibetan grid groove 4.The upper surface of crystal silicon substrate 1 and each
Diffusion layer 2 is provided with first Tibetan grid groove 4, grid line 5 is made of an electrically conducting material, and the fusing point of conductive material is molten higher than silicon
Point.Each grid line 5 is respectively arranged in each first bottom land for hiding grid groove 4.The first of the present embodiment hide the bottom land of grid groove 4 with it is each corresponding
The shape of grid line 5 matches.The lower surface of the present embodiment dorsum electrode layer 3 is provided with reflector layer 6.
In use, multiple grid lines 5 to be respectively arranged in the bottom land that first be respectively obliquely installed hides grid groove 4, work as sunlight
At the upper surface of the photovoltaic cell component, because the upper surface of diffusion layer 2 does not have grid line 5 to keep the sun off, photovoltaic is increased
The light-receiving area of battery component, improve the photoelectric transformation efficiency of photovoltaic cell component；And by first being hidden the opening of grid groove 4
The wedge angle position at end carries out chamfering Passivation Treatment, that is, cuts the tip of the first Tibetan grid groove 4.So tip becomes thicker shape
Shape.More photo-generated carrier can be produced, further increases photoelectric transformation efficiency；And by by the upper and lower of crystal silicon substrate 1
Surface carries out making herbs into wool Passivation Treatment, ensures that light as much as possible is injected in crystal silicon substrate 1, improves photoelectric transformation efficiency；Pass through
Reflector layer 6 is set in the lower surface of dorsum electrode layer 3, can make to reflect through the sunlight that crystal silicon substrate 1 is escaped, to avoid sun
The waste of light.
The processing method of the Tibetan grid photovoltaic cell component of the present embodiment, comprises the following steps：
（1）On the upper and lower surface of crystal silicon substrate 1, making herbs into wool is passivated two sides respectively, forms double matte crystal silicon substrates；
（2）By step（1）The upper surface of obtained double matte crystal silicon substrates 1 processes multiple first and hides grid groove 4, makes first
Grid groove 4 is hidden to set into angle of inclination relative to the upper surface of crystal silicon substrate 1, and be parallel to each other between multiple first Tibetan grid groove 4,
It is spaced, is uniformly arranged, chamfering Passivation Treatment is passed through at the openend wedge angle position of each first Tibetan grid groove 4, that is, reams corners
；
（3）The inwall for hiding grid groove 4 in crystal silicon substrate 1 and first with conductive material is diffused coating process, makes step
（2）Diffusion layer is obtained comprehensively in each first Tibetan grid groove 4 of obtained double matte crystal silicon substrates 1, forms continuous photovoltaic electric comprehensively
Pond PN junction, coating process is carried out in the lower surface of crystal silicon substrate with conductive material, dorsum electrode layer 3 is made, so as to which Tibetan grid be made
Photovoltaic cell component, conductive material can also be sintered in the first Tibetan grid groove 4 after slurrying brush system.
The present invention hides the example IV structural representation of grid photovoltaic cell component as shown in Figure 5, including crystal silicon substrate 1, sets
It is placed in the upper surface of crystal silicon substrate 1 and diffusion layer 2 and is arranged at the lower surface of crystal silicon substrate 1 by electric conductivity material made of conductive material
Dorsum electrode layer 3 made of material, the upper and lower surface of crystal silicon substrate 1 form double mattes by making herbs into wool Passivation Treatment.Diffusion
Layer 2 upper surface offer it is multiple extend it is crystal silicon substrate 1 inside and favour the upper surface of crystal silicon substrate 1 first Tibetan grid groove
4, the first Tibetan grid groove 4 can be linear or circular arc or L-shaped or circle, and it is linear that the present embodiment first, which hides grid groove 4,.It is multiple
First hides grid groove 4 in parallel, uniform, interval setting.Chamfering passivation is done in the wedge angle position of the openend of each first Tibetan grid groove 4
Processing, that is, prune wedge angle position.Thin grid line 5 is embedded with respectively in each first Tibetan grid groove 4.The upper surface of crystal silicon substrate 1 and each
Diffusion layer 2 is provided with first Tibetan grid groove 4, grid line 5 is made of an electrically conducting material, and the fusing point of conductive material is molten higher than silicon
Point.Each grid line 5 is respectively arranged in each first bottom land for hiding grid groove 4.The first of the present embodiment hide the bottom land of grid groove 4 with it is each corresponding
The shape of grid line 5 matches.The photovoltaic cell component also includes being embedded at least one main gate line 8 below the surface of diffusion layer 2.
The upper surface of diffusion layer 2, which offers, at least one extends inside crystal silicon substrate 1 and favouring the upper surface of crystal silicon substrate 1
Two hide grid groove 7, and the wedge angle position of the openend of each second Tibetan grid groove 7 has done chamfering Passivation Treatment, that is, pruned wedge angle position.This
Embodiment second hides grid groove 7 and is arranged to two.It is perpendicular arranged in a crossed manner that two second Tibetan grid grooves 7 and each first hide grid groove 4.Second
Hide and diffusion layer is provided with grid groove 7, two main gate lines 8 distinguish the hidden bottom lands for being located at two second Tibetan grid grooves 7.Main gate line 8 and
It is made of an electrically conducting material, and the fusing point of conductive material is higher than the fusing point of silicon.The second of the present embodiment hide the bottom land of grid groove 7 with it is right
The shape for the main gate line 8 answered matches.Multiple grid lines 5 are made into integration with two main gate lines 8 in this embodiment.The present embodiment back of the body electricity
The lower surface of pole layer 3 is provided with reflector layer 6.
In use, multiple grid lines 5 and two main gate lines 8 are integrally installed on multiple the first Tibetan grid grooves 4 being obliquely installed
The second bottom lands for hiding grid grooves 7 that bottom land and two are obliquely installed, when upper surface of the sunlight in the photovoltaic cell component, by
There is no grid line 5 and main gate line 8 to keep the sun off in the upper surface of diffusion layer 2, increase the light-receiving area of photovoltaic cell component, carry
The high photoelectric transformation efficiency of photovoltaic cell component；And the wedge angle position of the openend by hiding grid groove 4 by first and second is hidden
The openend wedge angle position of grid groove 7 carries out chamfering Passivation Treatment, that is, grid groove 7 is hidden at the tip and second for cutting the first Tibetan grid groove 4
Tip.So tip becomes thicker shape.More photo-generated carrier can be produced, further increases opto-electronic conversion
Efficiency；And by the way that the upper and lower surface of crystal silicon substrate 1 is carried out into making herbs into wool Passivation Treatment, ensure that light as much as possible injects crystal silicon
In substrate 1, photoelectric transformation efficiency is improved；By setting reflector layer 6 in the lower surface of dorsum electrode layer 3, can make to pass through crystal silicon base
The sunlight that bottom 1 is escaped reflects, and to avoid the waste of sunlight, improves its photoelectric transformation efficiency.
The processing method of the Tibetan grid photovoltaic cell component of the present embodiment, comprises the following steps：
（1）On the upper and lower surface of crystal silicon substrate 1, making herbs into wool is passivated two sides respectively, forms double matte crystal silicon substrates；
（2）By step（1）The upper surface of obtained double matte crystal silicon substrates 1 processes multiple first and hides grid groove 4 and two
Second hides grid groove 7, the first Tibetan grid groove 4, second is hidden grid groove 7 and is set relative to the upper surface of crystal silicon substrate 1 into angle of inclination,
And make to be parallel to each other between multiple first Tibetan grid groove 4, be spaced, be uniformly arranged, hide the parallel interval of grid groove 7 for two second and set, two
Individual second hides grid groove 7 hides grid groove 4 perpendicular to multiple first, and multiple first Tibetan grid groove 4 and two second hide grid grooves 7 and are interconnected,
Chamfering Passivation Treatment is passed through at the openend wedge angle position of each first Tibetan grid groove 4, each second Tibetan grid groove 7, that is, reams wedge angle；
（3）The inwall for hiding the Tibetan of grid groove 4, second grid groove 7 in crystal silicon substrate 1 and first with conductive material is diffused coating
Technique, make step（2）Each first Tibetan grid groove 4, second of obtained double matte crystal silicon substrates 1 is hidden in grid groove to be spread comprehensively
Layer, continuous photovoltaic cell PN junction comprehensively is formed, coating process is carried out in the lower surface of crystal silicon substrate with conductive material, is made
Dorsum electrode layer 3, grid photovoltaic cell component is hidden so as to be made.
The example structure schematic diagram of photovoltaic system of the present invention as shown in Figure 6, including optics phase shift plate 9 and above-mentioned Fig. 2-figure
Tibetan grid photovoltaic cell component described in 5 any embodiments, the present embodiment selection use the Tibetan grid photovoltaic cell component described in Fig. 4,
Including crystal silicon substrate 1, it is arranged at the upper surface of crystal silicon substrate 1 made of conductive material and diffusion layer 2 and is arranged at crystal silicon substrate 1
Lower surface dorsum electrode layer 3 made of conductive material, the upper and lower surface of crystal silicon substrate 1 by making herbs into wool passivation at
Reason, form double mattes.The upper surface of diffusion layer 2, which offers, multiple to be extended inside crystal silicon substrate 1 and favours crystal silicon substrate 1
The first of upper surface hides grid groove 4, and the first Tibetan grid groove 4 can be linear or circular arc or L-shaped or circle, and the present embodiment first is hidden
Grid groove 4 is linear.Multiple first hide grid groove 4 in parallel, uniform, interval setting.Each first hides the wedge angle of the openend of grid groove 4
Chamfering Passivation Treatment has been done at position, that is, prunes wedge angle position.Thin grid line 5 is embedded with respectively in each first Tibetan grid groove 4.Crystal silicon
Diffusion layer 2 is provided with the upper surface of substrate 1 and each first Tibetan grid groove 4, grid line 5 is made of an electrically conducting material, and conduction material
The fusing point of material is higher than the fusing point of silicon.Each grid line 5 is respectively arranged in each first bottom land for hiding grid groove 4.The first of the present embodiment hides grid
The bottom land of groove 4 matches with the shape of each corresponding grid line 5.The lower surface of the present embodiment dorsum electrode layer 3 is provided with reflector layer 6.Light
Learn the oblique upper that phase shift plate 9 is arranged at diffusion layer 2.
In use, because the photovoltaic system is provided with optics phase shift plate 9, sunlight can be transferred to by optics phase shift plate 9
Hide on grid photovoltaic cell component, Tibetan grid photovoltaic cell component utilization rate is enhanced about more than once.Overall reduction photovoltaic system generates electricity
Cost.
Those skilled in the art will readily occur to the present invention its after considering specification and putting into practice invention disclosed herein
Its embodiment.The application be intended to the present invention any modification, purposes or adaptations, these modifications, purposes or
Person's adaptations follow the general principle of the present invention and including undocumented common knowledges or usual in the art
Technological means.Description and embodiments be considered only as it is exemplary, true scope and spirit of the invention by following right will
Ask and point out.
It should be appreciated that the invention is not limited in the precision architecture for being described above and being shown in the drawings, and
And various modifications and changes can be being carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (9)
1. one kind hides grid photovoltaic cell component, including crystal silicon substrate, the conductive expansion for being arranged at crystal silicon upper surface of substrate
Dissipate and layer and be arranged at the conductive dorsum electrode layer of crystal silicon substrate lower surface, it is characterised in that the surface of the diffusion layer with
Under be embedded with multiple grid lines, the upper surface of the diffusion layer offers multiple extending crystal silicon base internal and favours crystal silicon
The first of upper surface of substrate hides grid groove, and described diffusion is provided with the crystal silicon upper surface of substrate and each first Tibetan grid groove
Layer, each hidden bottom land that grid groove is hidden located at each first of grid line difference.
2. it is according to claim 1 Tibetan grid photovoltaic cell component, it is characterised in that also include be embedded in diffusion layer surface with
Under at least one main gate line.
3. Tibetan grid photovoltaic cell component according to claim 2, it is characterised in that the upper surface of the diffusion layer offers
The second Tibetan grid groove that is at least one extending crystal silicon base internal and favouring crystal silicon upper surface of substrate, described second hides grid groove
Inside it is provided with diffusion layer, each hidden bottom land that grid groove is hidden located at each second of main gate line difference.
4. Tibetan grid photovoltaic cell component according to claim 3, it is characterised in that described first hides grid groove, the second Tibetan grid
Chamfering Passivation Treatment is passed through at the openend wedge angle position of groove.
5. Tibetan grid photovoltaic cell component according to claim 4, it is characterised in that the upper and lower surface of the crystal silicon substrate
Equal making herbs into wool passivation.
6. Tibetan grid photovoltaic cell component according to claim 5, it is characterised in that the lower surface of the dorsum electrode layer is provided with
Reflector layer.
A kind of 7. processing method of Tibetan grid photovoltaic cell component according to one of claim 1-6, it is characterised in that including
Following steps：
（1）The upper and lower surface of crystal silicon substrate is distinguished into making herbs into wool to be passivated to form double mattes；
（2）In step（1）Obtained crystal silicon upper surface of substrate makes multiple first and hides grid grooves, make described first hide grid groove relative to
Crystal silicon upper surface of substrate hides the openend wedge angle position of grid groove by chamfering passivation into being obliquely installed by each described first
Reason；
（3）Coating process is diffused with inwall of the conductive material in the crystal silicon substrate and the first Tibetan grid groove, makes step（2）
Diffusion layer is obtained comprehensively in each first Tibetan grid groove of obtained crystal silicon substrate, forms continuous photovoltaic cell PN junction comprehensively,
Coating process is carried out in the lower surface of crystal silicon substrate with conductive material, dorsum electrode layer is made, grid photovoltaic cell is hidden so as to be made
Component.
8. the processing method according to claim 7 for hiding grid photovoltaic cell component, it is characterised in that the step（2）In
It is additionally included in obtained crystal silicon upper surface of substrate and makes at least one second Tibetan grid groove, makes described second to hide grid groove relative to crystal silicon
Upper surface of substrate does chamfering Passivation Treatment, the step into being obliquely installed, by the openend wedge angle position of the described second Tibetan grid groove
（3）Middle increase is diffused coating process in the second Tibetan grid groove inwall, each first Tibetan grid groove, second is hidden in grid groove comprehensively
Obtain diffusion layer.
9. a kind of photovoltaic system, it is characterised in that including the Tibetan grid photovoltaic electric described in one of optics phase shift plate and claim 1-6
Pond component, the optics phase shift plate is located at the oblique upper of the Tibetan grid photovoltaic cell component.
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