CN106158576B - A method of obtaining bloom spectral purity EUV light source using glass gadolinium-doped target - Google Patents
A method of obtaining bloom spectral purity EUV light source using glass gadolinium-doped target Download PDFInfo
- Publication number
- CN106158576B CN106158576B CN201510141270.9A CN201510141270A CN106158576B CN 106158576 B CN106158576 B CN 106158576B CN 201510141270 A CN201510141270 A CN 201510141270A CN 106158576 B CN106158576 B CN 106158576B
- Authority
- CN
- China
- Prior art keywords
- gadolinium
- glass
- laser
- target
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
EUV light source (output wavelength is between 5 50 nm) has very important application in numerous areas.Glass gadolinium-doped is utilized the invention discloses a kind of（Or gadolinium compound）The method that target obtains bloom spectral purity 6.7nm EUV light sources, this method is effectively compressed spectral width, it reduces from band heat, it effectively prevent multilayer film light to collect the technology of mirror damage, significantly improve source mass, and this method is simple for process, significant effect, of low cost, is conducive to direct production application.
Description
Technical field
The present invention relates to chip manufacturing and extreme ultraviolet micro-imaging fields, more particularly to extreme ultraviolet laser plasma light
A kind of method of production in source.
Background technology
EUV light source (output wavelength is between 5-50 nm) has very important application in numerous areas.Extreme ultraviolet
Microscopy can carry out high-resolution imaging to the micro-structure of nanoscale；The extreme ultraviolet photolithographic of operation wavelength 13.5nm
（Extreme ultraviolet lithograph, EUVL）Light source is to make 22 nm nodes and smaller feature line widths half
The most powerful of conductor device, therefore the smaller light source of wavelength can bring higher lithography process precision；Extreme ultraviolet simultaneously
It is exactly in the resonance zone of most atomic energy levels, therefore, the light of this wave band is very suitable for the spectrum analysis of material.
Laser plasma is because small, brightness is high, extremely purple by selecting target and control plasma parameter that can realize
Outer plasma source exports extreme ultraviolet spectrum, is a kind of desk-top EUV light source of function admirable.In view of laser etc. from
Daughter point source radiation can be used effectively and be equipped with the factors such as necessary imaging system, and laser plasma 6.7nm's is extremely purple
For traditional 13.5nm, have in terms of penetration capacity significantly improves outer light, therefore more hyperbar may be used
Background gas prevents light source clast（Especially neutral atom, atomic group etc.）, light source cleanliness factor can be improved（Clast can be to extreme ultraviolet
Multi-layer mirror is polluted and is damaged in light source optical system）.And spectral purity（6.7nm multi-layer mirrors reflect
Bandwidth is generally 0.2nm, therefore ideal 6.7nm EUV light source spectral widths needs are suitable with multi-layer mirror bandwidth）It is right
Source mass also has important influence, can in imaging systems more if the light source breadth of spectrum line of the 6.7nm generated is wide
Tunic speculum is generated from band heat（The light that extra wave band can be absorbed in multi-layer mirror generates heat）And lead to multilayer film
Damage even damage, reduce the multi-layer mirror service life, therefore how to optimize light source make its spectral width narrow be light source whether
The important key technology that can be applied.And the EUV light source of 6.7nm is mostly that induced with laser high-purity solid gadolinium target comes at present
Obtain [Appl. Phys. Lett. 97,231503 (2010); Appl. Phys. Lett. 99, 231502
(2011)], spectral width is wider, is unfavorable for actual production and application.A kind of utilization glass gadolinium-doped target proposed by the present invention obtains
The method for obtaining bloom spectral purity 6.7nm EUV light sources, can effectively reduce radiation of light source spectral width, to improve the poles 6.7nm
Ultraviolet source spectral purity.
Invention content
The bad deficiency of 6.7nm EUV light source spectral purities, it is proposed that a kind of to obtain bloom using glass gadolinium-doped target
The method of spectral purity 6.7nm EUV light sources, this method utilize and mix gadolinium in glass（Or gadolinium compound）Mode make it is sharp
The low density target material of light action focuses this target surface using laser and generates the radiation of 6.7nm extreme ultraviolets, passes through and change gadolinium（Or
Gadolinium compound）Concentration optimization 6.7nm EUV light source quality improves spectral purity, to reduce from band heat.
The technical solution that the present invention takes：
The method for obtaining bloom spectral purity 6.7nm EUV light sources using glass gadolinium-doped target, specific features are as follows：
（1）By mixing gadolinium in glass（Or gadolinium compound）Make laser target；
（2）Target, which is focused, by laser generates extreme ultraviolet radiation；
（3）Under conditions of incident laser parameter is certain, by changing target doping density optimization radiation 6.7nm extreme ultraviolets
Spectral quality.
Spectral purity of the present invention is journey of the source emissioning light spectrum close to 6.7nm multi-layer mirror reflection bandwidths
Degree is higher closer to its spectral purity.The laser target is to pass through gadolinium（Or gadolinium compound）Participating in glass, with
" impurity " is gadolinium（Or gadolinium compound）Glass doping way is protection domain, such as：Porous Si O2Infusion method, colloidal sol-are solidifying
Glue doping method, gas-phase deposition, powder adulterate and to SiO2Powder carries out liquid doping etc..Carried glass includes various models
Glass, if any phosphate glass, silicate glass, soda-lime glass, fluoride glass, high temp glass, high pressure resistant glass, anti-
Vitaglass etc..Gadolinium for being adulterated in glass（Or element compound containing gadolinium）Can be powder, particle, bulk or former three
Wherein the two mixture or the mixture of this three, while can also be the mixture of gadolinium and the element compound containing gadolinium.Gadolinium element
Doping density（Concentration）From 0.1% --- 99%.The laser can be gas laser, solid state laser, chemical laser etc.
Various lasers.
The advantage of the invention is that：
（1）The present invention utilizes gadolinium（Or gadolinium compound）It is doped in glass and makes laser target, can be effectively compressed
Spectral width is reduced from band heat, is one and is improved light source purity in 6.7nm light source applications and prevent multilayer film light from collecting mirror damage
Technology, significantly promote source mass.
（2）Glass gadolinium-doped（Or gadolinium compound）Ideal light source can be realized using simple glass doping method to optimize
Effect, method are simple, quick easy to operate.And lower doping concentration is obtained with good effect, and this also significantly subtracts
Expensive raw materials are lacked（The compound of gadolinium or gadolinium）Usage amount, cost greatly reduces.
（3）After adulterating target use（After laser ablation induction light source generates）, it is only necessary to the surface that laser ablation is crossed carries out
Mechanical polishing, removes a small amount of surface（Polishing depth is slightly above ablation depth, and ablation depth is typically about 100 microns）
After can reuse, therefore it is high to adulterate target service life, also further reduces costs.
Description of the drawings
Fig. 1 laser irradiates solid target and generates 6.7nm EUV light source measuring device schematic diagrames, in figure：1 nanosecond laser,
2,3 be 45 ° of laser total reflective mirrors, 4 be 22.5 ° of laser total reflective mirrors, 5 condenser lenses, 6 laser targets, 7 vacuum chambers, 8
Zirconium filter coating, 9 cylindrical mirrors, 10 spherical mirrors, 11 gratings, 12 flat field grating spectrograph vacuum cavities, 13 x-ray CCD
Camera, 14 computers.
Fig. 2 doping concentrations optimize light source light spectrum quality typical data.
Fig. 3 gadoliniums mix target and gadolinium target spectral width optimum results typical data.
Specific implementation mode
Target is made first, by fusion casting, by Gd2O3Powder is directly incorporated into during glass makes, and stirs well even, system
At doping Gd2O3Silicate glass target, Gd concentration of element distribution can be within the scope of 0.1 %-99%.
As shown in Figure 1, by a Nd：YAG laser（1）Extreme ultraviolet spectrum is generated for ablation solid target, it can be defeated
It is respectively 1064 nm, 532 nm and 355 nm to go out wavelength, and corresponding pulsewidth is respectively 10 ns, 8 ns and 5 ns, present invention demonstration
Only with the laser of 1064nm wavelength in experiment.Laser is first through speculum（2）、（3）(4) it reflects, then through lens（5）It focuses
In target（6）Surface.
Target is placed on motorized precision translation stage, and motorized precision translation stage is placed in vacuum chamber（7）It is interior, when laser irradiates target, translation
Platform drives target mobile so that each laser pulse can be irradiated on a completely new target surface, to ensure extremely purple with certain speed
Outer light source signal steadily exports.
To evaluate 6.7nm EUV light source spectral qualities, a set of EUV light source measuring system is used to it
It measures.The target chamber vacuum chamber that light source is generated（7）With extreme ultraviolet radiation collection system, that is, soft x ray flat field grating spectrograph
（12）Vacuum degree control is carried out, vacuum degree is up to 10 in vacuum cavity-3 Pa is hereinafter, the high-density plasma that induced with laser generates
The extreme ultraviolet radiation light of body is collected by soft x ray flat field grating spectrograph and is measured.
Laser single-pulse energy 200mJ, laser focus on target material surface through the condenser lens that focal length is 400mm.Change is mixed
Miscellaneous target gadolinium constituent content（1 %, 5 %, 10 %, 20 %, 26 %, 32 % and 37 %）, optimize spectral quality, as shown in Fig. 2, herein
Under the conditions of gadolinium concentration of element 7% be optimal concentration condition.
Fig. 3 is traditional gadolinium target under the same terms（99.99 % of its gadolinium concentrations）With doping target（7 % of gadolinium concentrations）Obtain light source spectrum
Line compares, it can be clearly seen that light source light spectrum width（Deviate 6.7nm's）It has obtained significantly inhibiting.
Claims (4)
1. a kind of method obtaining bloom spectral purity EUV light source using glass gadolinium-doped target, which is characterized in that in glass
The mode of incorporation gadolinium or the element compound containing gadolinium makes laser target material, and gadolinium element mole percent level is in target
Arbitrary value in 0.1% -99% focuses the 6.7nm extreme ultraviolet spokes that induction target surface generates bloom spectral purity using laser
It penetrates, the optimization light source applications that this method obtains are led in chip manufacturing, Absorption Spectrum Research equipment and extreme ultraviolet micro-imaging
Domain；
Gadolinium or gadolinium compound glass doping way include porous Si O2Infusion method, sol-gel doping method, vapour deposition process, powder
At least one of body doping mode；
After adulterating target use, it is only necessary to the surface that laser ablation is crossed be mechanically polished, polishing depth is higher than ablation depth
It reuses；
When generating 6.7nm EUV light sources using laser irradiation solid target, condenser lens is positioned over outside vacuum chamber, laser simple venation
It is 200mJ to rush energy, and laser focuses on target material surface through the condenser lens that focal length is 400mm.
2. a kind of method obtaining bloom spectral purity EUV light source using glass gadolinium-doped target according to claim 1,
It is characterized in that the gadolinium for being used to adulterate in glass or gadolinium compound that are carried are powder, particle or bulk or type mentioned above
Arbitrary two or three of mixture.
3. a kind of method obtaining bloom spectral purity EUV light source using glass gadolinium-doped target according to claim 1,
It is characterized in that carried laser comes from various types of lasers, including gas laser, solid state laser, chemical laser
Device.
4. a kind of method obtaining bloom spectral purity EUV light source using glass gadolinium-doped target according to claim 1,
It is characterized in that the glass includes phosphate glass, silicate glass, soda-lime glass, fluoride glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510141270.9A CN106158576B (en) | 2015-03-30 | 2015-03-30 | A method of obtaining bloom spectral purity EUV light source using glass gadolinium-doped target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510141270.9A CN106158576B (en) | 2015-03-30 | 2015-03-30 | A method of obtaining bloom spectral purity EUV light source using glass gadolinium-doped target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106158576A CN106158576A (en) | 2016-11-23 |
| CN106158576B true CN106158576B (en) | 2018-07-20 |
Family
ID=57339639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510141270.9A Expired - Fee Related CN106158576B (en) | 2015-03-30 | 2015-03-30 | A method of obtaining bloom spectral purity EUV light source using glass gadolinium-doped target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106158576B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112362594B (en) * | 2020-10-14 | 2022-04-22 | 华南理工大学 | Direct detection method for mixed gel component distribution based on confocal microscopic hyperspectral imaging |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103105740A (en) * | 2013-01-16 | 2013-05-15 | 华中科技大学 | Solid-liquid combined target-based extreme ultraviolet source generator and light source system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10205189B4 (en) * | 2002-02-06 | 2012-06-28 | Xtreme Technologies Gmbh | Method for producing extreme ultraviolet radiation based on a radiation-emitting plasma |
-
2015
- 2015-03-30 CN CN201510141270.9A patent/CN106158576B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103105740A (en) * | 2013-01-16 | 2013-05-15 | 华中科技大学 | Solid-liquid combined target-based extreme ultraviolet source generator and light source system |
Non-Patent Citations (3)
| Title |
|---|
| Extreme ultraviolet source at 6.7nm based on a low-density plasma;Takeshi Higashiguchi et al.;《APPLIED PHYSICS LETTERS》;20111109;全文 * |
| Extreme ultraviolet spectra from highly charged gadolinium and neodymium ions in the Large Helical Device and laser produced plasmas;C Suzuki et al.;《PHYSICA SCRIPTA》;20130923;第1-3页 * |
| 激光等离子体极紫外光刻光源;窦银萍等;《中国光学》;20130228;第6卷(第1期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106158576A (en) | 2016-11-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sakakura et al. | Ultralow-loss geometric phase and polarization shaping by ultrafast laser writing in silica glass | |
| Zhang et al. | Lighting up silicon nanoparticles with Mie resonances | |
| US10838123B2 (en) | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications | |
| JP2021170123A (en) | Materials, components and methods for use with extreme-ultraviolet radiation in lithography and other applications | |
| TWI687756B (en) | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications | |
| Bertino et al. | Quantum dots by ultraviolet and x-ray lithography | |
| TWI407135B (en) | Structure and manufacturing method of the same | |
| Shimotsuma et al. | Three-dimensional micro-and nano-fabrication in transparent materials by femtosecond laser | |
| Drevinskas et al. | Tailored surface birefringence by femtosecond laser assisted wet etching | |
| US10838124B2 (en) | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications | |
| Danto et al. | Photowritable Silver‐Containing Phosphate Glass Ribbon Fibers | |
| Zograf et al. | Local crystallization of a resonant amorphous silicon nanoparticle for the implementation of optical nanothermometry | |
| Wang et al. | Analysis of defects patterned by femtosecond pulses inside KBr and SiO 2 glass | |
| Kumar et al. | Emission spectroscopy of NaYF 4: Eu nanorods optically trapped by Fresnel lens fibers | |
| CN106158576B (en) | A method of obtaining bloom spectral purity EUV light source using glass gadolinium-doped target | |
| Mardilovich et al. | Ultrafast laser fabrication of hybrid micro‐and nano‐structures in semiconductor‐doped borosilicate glasses | |
| Gorelik et al. | Optical properties of mesoporous photonic crystals, filled with dielectrics, ferroelectrics and piezoelectrics | |
| Zhao et al. | The nonlinear optical properties of silver nanoparticles decorated glass obtained from sintering mesoporous powders | |
| Babu et al. | Study of femtosecond laser writing in the bulk of Nd 3+, Y 3+ co-doped CaF 2 crystals | |
| Montereali | Colour centres in thin alkali halide films for optical microsystems | |
| KR20040034367A (en) | Nonlinear Optical Film, and Nonlinear Optical Element and Optical Switch Using the Same | |
| Lancry et al. | Porous nanogratings and related form birefringence in silicate and germanate glasses | |
| US20220155671A1 (en) | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications | |
| Ricaldi | Thin films based on Er3+ doped germanate-tellurite nanoglasses for Plasmonics | |
| Giardino et al. | A novel technique for automated detection, count and measurement of microplastics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180720 |