CN106148909A - A kind of method of patterned Graphene on base material and the template for described method - Google Patents
A kind of method of patterned Graphene on base material and the template for described method Download PDFInfo
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- CN106148909A CN106148909A CN201510151533.4A CN201510151533A CN106148909A CN 106148909 A CN106148909 A CN 106148909A CN 201510151533 A CN201510151533 A CN 201510151533A CN 106148909 A CN106148909 A CN 106148909A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 87
- 239000000463 material Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 239000010408 film Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 17
- 239000010439 graphite Substances 0.000 claims abstract description 17
- 238000000059 patterning Methods 0.000 claims abstract description 16
- -1 graphite alkene Chemical class 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000012546 transfer Methods 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- 229910052756 noble gas Inorganic materials 0.000 claims description 9
- 150000001336 alkenes Chemical class 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 7
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002390 adhesive tape Substances 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000003870 refractory metal Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005457 optimization Methods 0.000 claims description 3
- 229920006254 polymer film Polymers 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
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- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Abstract
The present invention relates to a kind of method of patterned Graphene on base material, described method is deposited graphite alkene thin film on the metal form have patterning, and the graphene film shifting patterning afterwards has the base material of patterned Graphene thin film to acquisition on base material.The method of patterned Graphene on base material that the application provides is without performing etching graphene film with mask plate, have only to deposited graphite alkene thin film on the metal form have predetermined pattern, it is transferred to base material substrate afterwards, it is possible to realize the purpose of patterned Graphene on base material.Described method low cost；Production efficiency is high.
Description
Technical field
The invention belongs to the preparation field of patterned Graphene thin film, be specifically related to a kind of patterning on base material
The method of Graphene and the template for described method.
Background technology
Transparent conductive film material, with its conduction and transparent feature, is widely used as transparent electrode material
In consumer electronics industry.Continuous along with touch screen, liquid crystal display and OLED display market
Expand, market to the demand of transparent electrode material by sustainable growth.At present, ITO (tin indium oxide) thin film with
Its higher conductivity, optical transmittance and excellent chemical stability become the main of transparent conductive film
Material.But owing to ITO is mainly composed of the oxide of scarce resource indium, and need to pass through cryogenic vacuum
The technique of magnetron sputtering produces so that it is relatively costly.It addition, the quality of ito thin film is more crisp, bending resistance folding endurance is not
Good, it is impossible to as flexible electrode material.Many research and development institutions are attempting the exploitation of ITO substitution material, wherein
Graphene has excellent electric conductivity, optical transmittance and bending resistance folding endurance and becomes the most promising ITO
Substitution material.
Now large-size graphene film production technology the most ripe, the graphene film prepared
There is higher optical transmittance and relatively low square resistance.In prior art, the figure of graphene membrane electrode
Caseization mainly uses laser ablation and two kinds of methods of plasma etching.The etching efficiency of both approaches is the most not
Height, and etching cost is higher.
Therefore, this area needs to develop a kind of method of patterned Graphene on base material, described method efficiency
Height, low cost.
Summary of the invention
The efficiency existed for the method for prior art patterned Graphene on base material is low, the deficiency that cost is high,
An object of the present invention is to provide a kind of method of patterned Graphene on base material, described method efficiency
Height, low cost.
Specifically, the present invention is achieved through the following technical solutions:
A kind of on base material the method for patterned Graphene be deposited graphite on the metal form have patterning
Alkene thin film, the graphene film shifting patterning afterwards has patterned Graphene thin film to acquisition on base material
Base material.
The present invention arranges a kind of metal form with predetermined pattern dexterously, by described metal form
Deposited graphite alkene thin film, it is thus achieved that there is the graphene film of predetermined pattern, afterwards described graphene film is turned
Print on base material, complete the method for patterned Graphene on base material.
Described predetermined pattern is the pattern of the graphene film needing formation.
Preferably, of the present invention on base material the method for patterned Graphene comprise the steps:
(1) template substrate, and the metal form being arranged in template substrate are provided；
(2) pattern metal template；
(3) deposited graphite alkene on metal form after patterning, obtains the stone consistent with metal form pattern
Ink alkene thin film；
(4) a base material substrate is provided；
(5) transfer graphene film is on base material substrate, obtains graphene film based on base material substrate.
Preferably, the material of described metal form is to can be used in the metal material of Graphene vapour deposition substrate,
Preferably any a kind or the alloy of at least 2 kinds in nickel, cobalt, copper, ferrum, molybdenum, tungsten, zinc, vanadium, such as
Nickel tungsten, copper-iron alloy etc.；Further preferably copper.
Preferably, the thickness of described metal form is 1mm～100cm, such as 2mm, 5mm, 25mm,
130mm, 268mm, 400mm, 870mm, 960mm etc., preferably 1mm～1cm, further preferably
1mm。
Preferably, the material of described template substrate is exotic material, and preferably high temperature resistant inorganic material, enters
One step is preferably refractory metal and refractory metal alloy, particularly preferred metallic iron.
The selection principle of described exotic material should be to carry out the material of Graphene chemical gaseous phase deposition.
Preferably, the high temperature resistant degree of described exotic material is 500～2000 DEG C, such as 550 DEG C, 682 DEG C,
780 DEG C, 980 DEG C, 1520 DEG C, 1800 DEG C, 1958 DEG C etc., preferably 800～1200 DEG C.
Preferably, the method for described pattern metal template is selected from impressing, 3d printing, cut, chemistry
In etching any a kind, preferably chemical etching.
Preferably, the pattern of described pattern metal template is selected from triangle, tetragon, polygon and bag
Irregular figure containing camber line.
Described pattern is the pattern of the graphene film needing preparation, and those skilled in the art can be as required
It is designed.
Preferably, described metal form is carried out before patterning, and described cleaning step is preferably used third
Ketone, ethanol and dilute hydrochloric acid process metal form surface, remove the impurity such as metal-oxide, greasy dirt.
Preferably, the method for described deposited graphite alkene is selected from chemical vapor deposition method.
Preferably, described chemical vapour deposition technique is under reducing atmosphere, heat resolve carbon source gas,
Carbon source gas aggradation forms graphene film on metal form afterwards.
Wherein, described carbon source gas is hydrocarbon gas, optimization methane, ethylene or acetylene.
Wherein, described reducing atmosphere is the mixed gas of hydrogen and/or noble gas；Described noble gas is excellent
Select helium and/or argon.
Wherein, the temperature of described heat resolve is 600～1200 DEG C, such as 650 DEG C, 850 DEG C, 920 DEG C,
985 DEG C, 1000 DEG C, 1015 DEG C, 1080 DEG C, 1150 DEG C, 1179 DEG C etc..
Hydrogen in chemical vapour deposition technique plays reduction, and noble gas shields；In reaction all the time
Being passed through hydrogen and noble gas, hydrogen reducing template surface oxide, noble gas shields.Treat temperature
After degree rises to suitable temperature (in the range of 600～1200 DEG C), metal form insulation annealing a period of time, so
After be passed through carbon source gas；Carbon-source gas at high temperature can crack, and wherein carbon atom can be on metal form surface
Form graphene film.
Preferably, the material of described base material substrate is thin polymer film or glass, preferably PMMA, PT, PET
Or glass.
Preferably, the method for described transfer graphene film is: on the graphene film that step (3) obtains
Coating PMMA colloidal sol, film-forming, cover base material substrate, after external force removes template substrate, etching afterwards
Remove metal form, complete the transfer of graphene film；
Preferably, described solidification temperature is 260～290 DEG C, such as 265 DEG C, 268 DEG C, 275 DEG C, 288 DEG C
Deng.
Etching to metal form is the state of the art, and the present invention repeats no more.
Preferably, the method for described transfer graphene film is: on the graphene film that step (3) obtains
Paste heat release adhesive tape, under External Force Acting, graphene film is separated from metal form, be attached to base afterwards
On material substrate, finally heated, release heat release adhesive tape, complete the transfer of graphene film.
Preferably, the method for described transfer graphene film is: by Optical transparent adhesive by base material substrate and step
Suddenly the graphene film that (3) obtain mutually pastes, and is separated with metal form by graphene film under External Force Acting,
Complete the transfer of graphene film.
The two of the purpose of the present invention be to provide a kind of for one of purpose Suo Shu on base material patterned Graphene side
The template of method, described template includes the most successively:
Metal form substrate；
The metal form of patterning.
Compared with prior art, there is advantages that
The method of patterned Graphene on base material that the application provides is without entering graphene film with mask plate
Row etching, it is only necessary to deposited graphite alkene thin film on the metal form have predetermined pattern, is transferred to base afterwards
Material substrate, it is possible to realize the purpose of patterned Graphene on base material.Described method does not use laser incising
The techniques such as erosion or chemical etching, eliminate mask plate, low cost；And without complete graphene film is entered
Row patterning, directly by presetting deposited graphite alkene on figuratum metal form, just can finishing patterns
The acquisition of graphene film, production efficiency is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of the template of patterned Graphene method on base material.
Detailed description of the invention
For ease of understanding the present invention, it is as follows that the present invention enumerates embodiment.Those skilled in the art it will be clearly understood that
The only help of described embodiment understands the present invention, is not construed as the concrete restriction to the present invention.
Embodiment 1
A kind of method of patterned Graphene on base material, described method comprises the steps:
(1) template, described template is provided to include template substrate, and the metal pattern being arranged in template substrate
Plate；
The material of described metal form is to can be used in the metal material of Graphene vapour deposition substrate, preferably nickel,
Any a kind or the alloy of at least 2 kinds in cobalt, copper, ferrum, molybdenum, tungsten, zinc, vanadium；Further preferably copper；
Preferably, the thickness of described metal form is 1mm～100cm, preferably 1mm～1cm, the most excellent
Select 1mm；
The material of described template substrate is exotic material, preferably high temperature resistant inorganic material, further preferably
For refractory metal and refractory metal alloy, particularly preferred metallic iron；
Preferably, the high temperature resistant degree of described exotic material is 500～2000 DEG C, preferably 800～1200 DEG C；
Described metal form is carried out before patterning, and described cleaning step is preferably used acetone, ethanol
Process metal form surface with dilute hydrochloric acid, remove the impurity such as metal-oxide, greasy dirt；
(2) pattern metal template；
Now, formed for the template of patterned Graphene method, its structural representation such as Fig. 1 on base material
(Fig. 1 is for the template of patterned Graphene method on base material described in embodiment 1), described template by under
Supreme include successively:
Metal form substrate；
The metal form of patterning；
The method of described pattern metal template is in impressing, 3d printing, cut, chemical etching
Any a kind, preferably chemical etching；
Preferably, the pattern of described pattern metal template is the pattern of predetermined patterned Graphene thin film,
Selected from triangle, tetragon, polygon and the irregular figure comprising camber line；
(3) deposited graphite alkene on metal form after patterning, obtains the stone consistent with metal form pattern
Ink alkene thin film；
The method of described deposited graphite alkene is selected from chemical vapor deposition method；
Preferably, described chemical vapour deposition technique is under reducing atmosphere, heat resolve carbon source gas,
Carbon source gas aggradation forms graphene film on metal form afterwards；
Wherein, described carbon source gas is hydrocarbon gas, optimization methane, ethylene or acetylene；
Wherein, described reducing atmosphere is the mixed gas of hydrogen and/or noble gas；Described noble gas is excellent
Select helium and/or argon；
Wherein, the temperature of described heat resolve is 600～1200 DEG C；
(4) a base material substrate is provided；
The material of described base material substrate is thin polymer film or glass, preferably PMMA, PT, PET or glass；
(5) transfer graphene film is on base material substrate, obtains graphene film based on base material substrate；
As the detailed description of the invention on the first transfer graphene film to base material substrate, described transfer graphite
The method of alkene thin film is: coats PMMA colloidal sol on the graphene film that step (3) obtains, is solidified into
Film, covers base material substrate afterwards, and after external force removes template substrate, etching removes metal form, completes graphite
The transfer of alkene thin film；
Preferably, the concentration of PMMA colloidal sol is, solidification temperature is preferably；
Preferably, the step that described etching removes metal form is:；
As the detailed description of the invention on the second transfer graphene film to base material substrate, described transfer graphite
The method of alkene thin film is: paste heat release adhesive tape, External Force Acting on the graphene film that step (3) obtains
Lower graphene film is separated from metal form, be attached to afterwards on base material substrate, finally heated, release
Heat release adhesive tape, completes the transfer of graphene film；
As the detailed description of the invention on the third transfer graphene film to base material substrate, described transfer graphite
The method of alkene thin film is: graphene film phase base material substrate and step (3) obtained by Optical transparent adhesive
Paste mutually, under External Force Acting, graphene film is separated with metal form, complete the transfer of graphene film.
Applicant states, the present invention illustrates detailed process equipment and the technique of the present invention by above-described embodiment
Flow process, but the invention is not limited in above-mentioned detailed process equipment and technological process, i.e. do not mean that the present invention
Have to rely on above-mentioned detailed process equipment and technological process could be implemented.Person of ordinary skill in the field should
This understands, any improvement in the present invention, and the equivalence of raw material each to product of the present invention is replaced and auxiliary element
Interpolation, concrete way choice etc., within the scope of all falling within protection scope of the present invention and disclosure.
Claims (10)
1. the method for a patterned Graphene on base material, it is characterised in that described method is for have figure
Deposited graphite alkene thin film on the metal form of case, the graphene film shifting patterning afterwards obtains to base material
Must have the base material of patterned Graphene thin film.
2. the method for claim 1, it is characterised in that described method comprises the steps:
(1) template, described template is provided to include template substrate, and the metal pattern being arranged in template substrate
Plate；
(2) pattern metal template；
(3) deposited graphite alkene on metal form after patterning, obtains the stone consistent with metal form pattern
Ink alkene thin film；
(4) a base material substrate is provided；
(5) transfer graphene film is on base material substrate, obtains graphene film based on base material substrate.
3. method as claimed in claim 2, it is characterised in that the material of described metal form is for using
In the metal material of Graphene vapour deposition substrate, preferably in nickel, cobalt, copper, ferrum, molybdenum, tungsten, zinc, vanadium
Any a kind or the alloy of at least 2 kinds；Further preferably copper；
Preferably, the thickness of described metal form is 1mm～100cm, preferably 1mm～1cm, the most excellent
Select 1mm；
Preferably, the material of described template substrate is exotic material, and preferably high temperature resistant inorganic material, enters
One step is preferably refractory metal and refractory metal alloy, particularly preferred metallic iron；
Preferably, the high temperature resistant degree of described exotic material is 500～2000 DEG C, preferably 800～1200 DEG C.
4. method as claimed in claim 2 or claim 3, it is characterised in that the side of described pattern metal template
Method is selected from any a kind in impressing, 3d printing, cut, chemical etching, preferably chemical etching；
Preferably, the pattern of described pattern metal template is selected from triangle, tetragon, polygon and bag
Irregular figure containing camber line；
Preferably, described metal form is carried out before patterning, and described cleaning step is preferably used third
Ketone, ethanol and dilute hydrochloric acid process metal form surface, remove the impurity such as metal-oxide, greasy dirt.
5. the method as described in one of claim 2～4, it is characterised in that the method for described deposited graphite alkene
Selected from chemical vapor deposition method；
Preferably, described chemical vapour deposition technique is under reducing atmosphere, heat resolve carbon source gas,
Carbon source gas aggradation forms graphene film on metal form afterwards；
Wherein, described carbon source gas is hydrocarbon gas, optimization methane, ethylene or acetylene；
Wherein, described reducing atmosphere is the mixed gas of hydrogen and/or noble gas；Described noble gas is excellent
Select helium and/or argon；
Wherein, the temperature of described heat resolve is 600～1200 DEG C.
6. the method as described in one of claim 2～5, it is characterised in that the material of described base material substrate is
Thin polymer film or glass, preferably PMMA, PT, PET or glass.
7. the method as described in one of claim 2～6, it is characterised in that described transfer graphene film
Method is: coating PMMA colloidal sol on the graphene film that step (3) obtains, film-forming, afterwards
Covering base material substrate, after external force removes template substrate, etching removes metal form, completes graphene film
Transfer；
Preferably, described solidification temperature is 260～290 DEG C.
8. the method as described in claim 2～6, it is characterised in that the method for described transfer graphene film
For: on the graphene film that step (3) obtains, paste heat release adhesive tape, under External Force Acting, Graphene is thin
Film separates from metal form, is attached to afterwards on base material substrate, finally heated, release heat release adhesive tape,
Complete the transfer of graphene film.
9. the method as described in claim 2～6, it is characterised in that the method for described transfer graphene film
For: by Optical transparent adhesive, the graphene film that base material substrate and step (3) obtain mutually is pasted, external force
Under effect, graphene film is separated with metal form, complete the transfer of graphene film.
10. for the described template for patterned Graphene method on base material of one of claim 1～9,
It is characterized in that, described template includes the most successively:
Metal form substrate；
The metal form of patterning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510151533.4A CN106148909A (en) | 2015-04-01 | 2015-04-01 | A kind of method of patterned Graphene on base material and the template for described method |
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Cited By (10)
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| CN106624371A (en) * | 2016-12-29 | 2017-05-10 | 无锡格菲电子薄膜科技有限公司 | Method for forming patterned graphene on target device |
| CN106816409A (en) * | 2017-03-09 | 2017-06-09 | 武汉华星光电技术有限公司 | The preparation method of the preparation method of electrode layer and flexible TFT substrate in TFT substrate |
| CN106847550A (en) * | 2017-02-15 | 2017-06-13 | 哈尔滨工业大学深圳研究生院 | A kind of laser boring template electroplates porous metal film and its method and application |
| CN107012443A (en) * | 2017-04-16 | 2017-08-04 | 北京工业大学 | A kind of process of the graphical direct growth graphene of dielectric substrate |
| CN107311159A (en) * | 2017-05-22 | 2017-11-03 | 中国科学院微电子研究所 | A kind of growing patterned method of graphene |
| CN108342700A (en) * | 2018-03-22 | 2018-07-31 | 上海理工大学 | A kind of method for the laser lift-off metallic film that pattern is controllable |
| CN108529605A (en) * | 2018-06-26 | 2018-09-14 | 东南大学 | A kind of preparation method of large area pattern graphite alkene |
| CN108548852A (en) * | 2018-06-27 | 2018-09-18 | 北京镭硼科技有限责任公司 | A kind of graphene-based film-type hydrogen gas sensor and preparation method thereof |
| CN109257931A (en) * | 2017-05-15 | 2019-01-22 | 电子部品研究院 | Graphene preparation method |
| CN113488442A (en) * | 2021-07-06 | 2021-10-08 | 德州宇航派蒙石墨烯科技有限责任公司 | Ultrathin radiating fin and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120241069A1 (en) * | 2011-03-22 | 2012-09-27 | Massachusetts Institute Of Technology | Direct Synthesis of Patterned Graphene by Deposition |
| KR101220421B1 (en) * | 2010-06-15 | 2013-01-09 | (재)한국나노기술원 | Method of forming graphene pattern utilizing imprint |
| CN102897759A (en) * | 2012-10-17 | 2013-01-30 | 东南大学 | Loss-less transfer method for large-size graphene |
| CN103922327A (en) * | 2014-04-17 | 2014-07-16 | 江南石墨烯研究院 | Method for nondestructively transferring graphene thin film in large area |
| CN103935992A (en) * | 2014-04-25 | 2014-07-23 | 无锡格菲电子薄膜科技有限公司 | Graphene transfer method |
-
2015
- 2015-04-01 CN CN201510151533.4A patent/CN106148909A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101220421B1 (en) * | 2010-06-15 | 2013-01-09 | (재)한국나노기술원 | Method of forming graphene pattern utilizing imprint |
| US20120241069A1 (en) * | 2011-03-22 | 2012-09-27 | Massachusetts Institute Of Technology | Direct Synthesis of Patterned Graphene by Deposition |
| CN102897759A (en) * | 2012-10-17 | 2013-01-30 | 东南大学 | Loss-less transfer method for large-size graphene |
| CN103922327A (en) * | 2014-04-17 | 2014-07-16 | 江南石墨烯研究院 | Method for nondestructively transferring graphene thin film in large area |
| CN103935992A (en) * | 2014-04-25 | 2014-07-23 | 无锡格菲电子薄膜科技有限公司 | Graphene transfer method |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106624371B (en) * | 2016-12-29 | 2018-04-20 | 无锡格菲电子薄膜科技有限公司 | A kind of method that patterned graphene is formed on target devices |
| CN106624371A (en) * | 2016-12-29 | 2017-05-10 | 无锡格菲电子薄膜科技有限公司 | Method for forming patterned graphene on target device |
| CN106847550A (en) * | 2017-02-15 | 2017-06-13 | 哈尔滨工业大学深圳研究生院 | A kind of laser boring template electroplates porous metal film and its method and application |
| CN106847550B (en) * | 2017-02-15 | 2018-10-09 | 哈尔滨工业大学深圳研究生院 | A kind of laser boring template plating porous metal film and its method and application |
| CN106816409A (en) * | 2017-03-09 | 2017-06-09 | 武汉华星光电技术有限公司 | The preparation method of the preparation method of electrode layer and flexible TFT substrate in TFT substrate |
| CN107012443A (en) * | 2017-04-16 | 2017-08-04 | 北京工业大学 | A kind of process of the graphical direct growth graphene of dielectric substrate |
| CN107012443B (en) * | 2017-04-16 | 2019-07-12 | 北京工业大学 | A kind of insulating substrate graphically directly grows the process of graphene |
| CN109257931A (en) * | 2017-05-15 | 2019-01-22 | 电子部品研究院 | Graphene preparation method |
| CN109257931B (en) * | 2017-05-15 | 2022-05-03 | 电子部品研究院 | Graphene preparation method |
| CN107311159A (en) * | 2017-05-22 | 2017-11-03 | 中国科学院微电子研究所 | A kind of growing patterned method of graphene |
| CN108342700A (en) * | 2018-03-22 | 2018-07-31 | 上海理工大学 | A kind of method for the laser lift-off metallic film that pattern is controllable |
| CN108529605A (en) * | 2018-06-26 | 2018-09-14 | 东南大学 | A kind of preparation method of large area pattern graphite alkene |
| CN108548852A (en) * | 2018-06-27 | 2018-09-18 | 北京镭硼科技有限责任公司 | A kind of graphene-based film-type hydrogen gas sensor and preparation method thereof |
| CN113488442A (en) * | 2021-07-06 | 2021-10-08 | 德州宇航派蒙石墨烯科技有限责任公司 | Ultrathin radiating fin and preparation method thereof |
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