CN106145103B - A kind of preparation method of the two-dimensional layer hetero-junctions based on graphene - Google Patents
A kind of preparation method of the two-dimensional layer hetero-junctions based on graphene Download PDFInfo
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- CN106145103B CN106145103B CN201610652002.8A CN201610652002A CN106145103B CN 106145103 B CN106145103 B CN 106145103B CN 201610652002 A CN201610652002 A CN 201610652002A CN 106145103 B CN106145103 B CN 106145103B
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- C—CHEMISTRY; METALLURGY
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Abstract
The invention discloses a kind of preparation methods of the two-dimensional layer hetero-junctions based on graphene.The preparation method includes the following steps：1) it will be placed in the reaction chamber of metallic substrates and be passed through hydrogen and carbon source gas, and heat the reaction chamber to make carbon dissolution in the metallic substrates；2) stop being passed through the carbon source gas into the reaction chamber, and heating reaction source makes it be grown in the metallic substrates；3) temperature of the reaction chamber is reduced, the carbon dissolved in the metallic substrates is precipitated to form graphene, so far to get to the two-dimensional layer hetero-junctions based on graphene.Preparation method of the present invention further controls the thickness of low temperature institute indigenous graphite alkene using the two-dimensional materials such as transition metal substrate surface Direct precipitation boron nitride, molybdenum disulfide using metal Carbon Solubility difference at different temperatures.Preparation method of the present invention improves growth efficiency, reduces production cost, and reduces the impurity introduced in preparation process.
Description
Technical field
The present invention relates to a kind of preparation methods of two-dimensional layer hetero-junctions, and in particular to a kind of two-dimensional layer based on graphene
The preparation method of shape hetero-junctions.
Background technology
From grapheme material in 2004 with its unique tow -dimensions atom structure, excellent physicochemical characteristics, theoretical and
It is all caused in application study and unprecedented grinds the upsurge that makes internal disorder or usurp.The research of graphene also opens the gate of two-dimensional material, causes
People have other to graphene the great interest of the two-dimensional layer nano material of similar structure.Up to the present, have
Hundreds of two-dimensional material is found by people, including hexagonal boron nitride, black phosphorus and transient metal sulfide and oxide material etc..
The wherein characteristics such as broad-band gap, low-k, high-termal conductivity with 5.9eV of individual layer hexagonal boron nitride, can be applied to device
Dielectric layer.Using molybdenum disulfide as the transient metal chalcogenide compound of representative, energy band also has both between 1.0~2.0eV
There is the lot of advantages of graphene, the fields such as scene effect transistor, sensor, electricity storage, which are gathered around, to have broad application prospects.Into one
Step can design by the different two-dimensional materials of two kinds of stacking of selectivity and prepare the hetero-junction thin-film with different function.Example
Such as, the hetero-junctions of graphene and hexagonal boron nitride composition can adjust graphite by regulating and controlling interlayer stack angle in wide range
The band gap of alkene.Using boron nitride as dielectric layer, it is remarkably improved the carrier mobility of the heterojunction semiconductors such as molybdenum disulfide.Two
The excellent properties of multiple material can be combined by tieing up film heterojunction, further open up these new diseases fields and range.
However inhomogeneity two-dimensional material performance characteristics and technology of preparing are widely different, and it is not small to be directly realized by successively growth difficulty.It is most of
Work be transferred to suitable substrate, redeposited second of material all using two-step growth method, such as by the first material prepared
Material.Complex steps, and the material homogeneity prepared in this way is poor.Scale material preparation be device application premise and
Two-dimensional material LBL self assembly thus there is an urgent need for the technology that development one-step method prepares hetero-junction thin-film, is realized in basis.
Invention content
The object of the present invention is to provide a kind of preparation method of a direct step for the two-dimensional layer hetero-junctions based on graphene,
It is compared with existing method, preparation method of the present invention can obtain clean heterojunction boundary, improve growth efficiency, reduce life
Produce cost.
The preparation method of two-dimensional layer hetero-junctions provided by the present invention based on graphene, includes the following steps：
1) it will be placed in the reaction chamber of metallic substrates and be passed through hydrogen and carbon source gas, and heat the reaction chamber to make carbon dissolution
In the metallic substrates；
2) stop being passed through the carbon source gas into the reaction chamber, keep being passed through the hydrogen, and heat reaction source to make it
It is grown in the metallic substrates；
3) it keeps being passed through the hydrogen, reduces the temperature of the reaction chamber, shape is precipitated in the carbon dissolved in the metallic substrates
Into graphene, so far to get to the two-dimensional layer hetero-junctions based on graphene.
In above-mentioned preparation method, the reaction source is put into the substrate etc. in the reaction chamber before heating.
In above-mentioned preparation method, the metallic substrates can be platinum base bottom, nickel substrate, corronil substrate, palladium base bottom, iron
The transition metal such as substrate simple substance and its alloy, the i.e. metal with certain Carbon Solubility.
In above-mentioned preparation method, the preparation method carries out in CVD system, and the metallic substrates are placed in the CVD
The heating zone of system；
The reaction source is placed in quartz boat and positioned at the inlet end of the CVD system, and the quartz boat is placed in described anti-
It answers in chamber；
Before step 1), the step of the method includes being vacuumized to the reaction chamber, when in the reaction chamber
After vacuum reaches certain stationary value, start to heat reaction chamber, and be passed through H2, it is therefore an objective to remove metal substrate surface residual
Organic matter or oxide.
In above-mentioned preparation method, before step 1), the method is further included the metallic substrates 1000~1100
The step of 10~30min is made annealing treatment at DEG C, such as carries out annealing 30min, the purpose is to make metal recrystallization, surface at 1100 DEG C
It is more smooth, and can further remove the organic matter of metal substrate surface.
In above-mentioned preparation method, in step 1), the temperature of the reaction chamber is heated to 700~1400 DEG C, actual temp
It can be adjusted according to the fusing point of the metallic substrates, when such as using Pt pieces or Cu-Ni alloys, heat the temperature of the reaction chamber
To 1100 DEG C.
In above-mentioned preparation method, in step 1), the carbon source gas can be the hydrocarbons gas such as methane, ethylene, acetylene
Body；
The rate for being passed through the hydrogen can be 0~1000sccm, concretely 10sccm；
The rate for being passed through the carbon source gas is 0~500sccm, concretely 5sccm or 10sccm.
In above-mentioned preparation method, in step 2), the temperature of the growth can be 65~200 DEG C, the time of the growth
It can be 0~60min, such as grow 30min at 100 DEG C.
In above-mentioned preparation method, in step 2), the reaction source can be following 1) -5) in it is any：
1) ammonia borine (NH3·BH3, Solid Source)；
2) borazine (B3H6N3, gas)；
3) diborane (B2H6, gas) and ammonia；
4) molybdenum trioxide and sulphur；
5) tungstic acid and sulphur；
Graphene/boron nitride hetero-junctions is obtained when such as using the ammonia borine, borazine or diborane and ammonia, is such as adopted
Graphene/molybdenum disulfide hetero-junctions is obtained during with sulphur powder and molybdenum trioxide, the sulphur of graphene/bis- is such as obtained using tungstic acid and sulphur
Change tungsten hetero-junctions.
In above-mentioned preparation method, in step 3), the temperature for reducing the reaction chamber is used with the cooling of 5~26 DEG C/min
Rate is down to 600~900 DEG C of mode；
By controlling rate of temperature fall that can control the thickness of formed graphene；According to the metallic substrates of use not
Together, the condition of above-mentioned cooling is different, and when using platinized platinum, being cooled to 600 DEG C with the rate of temperature fall of 21.6 DEG C/min can
Indigenous graphite alkene, when using Cu-Ni alloys, being cooled to 900 DEG C with the rate of temperature fall of 26 DEG C/min could indigenous graphite alkene.
In above-mentioned preparation method, the method, which further includes, is transferred to the two-dimensional layer hetero-junctions based on graphene
Step on substrate；
It is shifted using bubbling transfer method or polystyrene transfer method；
The bubbling transfer method can carry out in accordance with the following steps：The metallic substrates for having the hetero-junctions based on graphene will be grown
Spin coating PMMA glue, is transferred to using bubbling transfer method on substrate, and the PMMA glue of sample surfaces is removed with acetone bubble.
The polystyrene transfer method can carry out in accordance with the following steps：The metal for having the hetero-junctions based on graphene will be grown
Substrate spin coating polystyrene solution, dries to be put into 2molNaOH solution and is heated to 90 DEG C, graphene/boron nitride/polystyrene
Layer will be swum in NaOH solution, and sample, polystyrene layer and substrate attaching are fished for substrate, heating 10min temperature after drying
Spend is 120 DEG C, then sample is put into acetone soln and removes remaining polystyrene.
In above-mentioned preparation method, before step 1), the method, which further includes, utilizes acetone, ethyl alcohol and deionized water ultrasound
The step of cleaning the metallic substrates, to remove the impurity on surface and organic matter.
Preparation method of the present invention utilizes the two-dimensional materials such as transition metal substrate surface Direct precipitation boron nitride, molybdenum disulfide,
Further the thickness of low temperature institute indigenous graphite alkene is controlled using metal Carbon Solubility difference at different temperatures.I.e. temperature is got over
High metal is bigger to the solubility of carbon, so carbon dissolution is carried out at high temperature, carbon supersaturation when temperature reduces in metallic object,
Metal surface is precipitated and forms graphene.Ultimately form the two-dimensional hetero-junction film based on graphene.Preparation method of the present invention carries
High growth efficiency, reduces production cost, and reduce the impurity introduced in preparation process.
Description of the drawings
Fig. 1 is the CVD growth schematic diagram of preparation method of the present invention.
Fig. 2 is the growing principle figure of preparation method of the present invention.
Fig. 3 is that subband structures boron nitride/full single-layer graphene in the embodiment of the present invention 1 at 1100 DEG C in the acquisition of Pt pieces is heterogeneous
The SEM figures of knot.
Fig. 4 is to obtain subband structures boron nitride/full single-layer graphene hetero-junctions in Pt pieces at 1100 DEG C in the embodiment of the present invention 1
XPS spectrum (B1s).
Fig. 5 is to obtain subband structures boron nitride/full single-layer graphene hetero-junctions in Pt pieces at 1100 DEG C in the embodiment of the present invention 1
XPS spectrum (N1s).
Fig. 6 is to obtain subband structures boron nitride/full single-layer graphene hetero-junctions in Pt pieces at 1100 DEG C in the embodiment of the present invention 1
XPS spectrum (C1s).
Fig. 7 is that the AES that boron nitride/graphene hetero-junctions prepared by the embodiment of the present invention 1 is transferred on silicon chip is composed entirely.
Fig. 8 is the AES that boron nitride/graphene hetero-junctions prepared by the embodiment of the present invention 1 is transferred to the BN regions on silicon chip
Depth analysis curve.
Fig. 9 is the hetero-junctions region that boron nitride/graphene hetero-junctions prepared by the embodiment of the present invention 1 is transferred on silicon chip
AES depth analysis curves.
Figure 10 is to obtain the heterogeneous SEM of boron nitride/graphene in the embodiment of the present invention 2 at 1050 DEG C on Cu-Ni alloys
Figure.
Figure 11 is to obtain on Cu-Ni alloys that boron nitride/graphene is heterogeneous to be transferred in the embodiment of the present invention 2 at 1050 DEG C
Optical picture on silicon chip.
Figure 12 is to obtain on Cu-Ni alloys that boron nitride/graphene is heterogeneous to be transferred in the embodiment of the present invention 2 at 1050 DEG C
Raman spectral peak figures on silicon chip.
Specific embodiment
Experimental method used in following embodiments is conventional method unless otherwise specified.
The materials, reagents and the like used in the following examples is commercially available unless otherwise specified.
Embodiment 1 prepares graphene/boron nitride hetero-junctions in Pt on pieces
The method of the present invention prepare graphene/boron nitride hetero-junctions CVD growth schematic diagram and growing principle figure respectively such as Fig. 1
Shown in Fig. 2.
The preparation of substrate：
The Pt pieces of suitable dimension are sheared as substrate, is cleaned by ultrasonic successively using acetone, alcohol and deionized water, gone
Except the impurity and organic matter on surface.
The preparation of graphene/boron nitride hetero-junctions：
First, the ammonia borine for weighing 3mg is positioned in the U-shaped quartz boat that one end is remained silent；By ready Pt pieces (3cm ×
3cm) be put into CVD quartz ampoules with ammonia borine reaction source, the positions of Pt pieces is the centre of heating zone, the position in ammonia borine source into
Gas end distance Pt pieces 35cm；Secondly, quartz ampoule is vacuumized, vacuum is evacuated to 2.26 × 10-3Torr adds furnace body
Heat is warming up to 1100 DEG C, is passed through 10sccm H2, and before growth, be maintained at 1100 DEG C and 30min's is carried out to Pt substrates
Annealing.Finally, after 30min annealing, it is passed through the CH of 10sccm4(i.e. H2：CH4=10sccm：10sccm), carbon source is provided.
After 30min, turn off CH4Gas is passed through 20sccmH2, and reaction source is heated in the heating tape opened at ammonia borine, temperature
It it is 100 DEG C, the growth time of boron nitride is 30min.After 30min, turn off heating and the heating tape of CVD, keep 10sccmH2,
600 DEG C are slowly cooled to the cooling rate of 21.6 DEG C/min, carbon acquisition graphene is precipitated, then raise bell again and carry out quickly
Cooling, i.e., obtain graphene/boron nitride hetero-junctions in Pt on pieces.
The transfer of graphene/boron nitride hetero-junctions：
Graphene manufactured in the present embodiment/boron nitride hetero-junctions is transferred on silicon chip：Growth there is into graphene/boron nitride
The Pt pieces bubbling transfer method of hetero-junctions, first the spin coating PMMA glue on sample, dries, and 1molNaOH solution is inserted into as cathode
Electrolyte, the pure Pt pieces of anode, current control is in~1A, the graphene/boron nitride/PMMA glue hetero-junctions that will be come off from Pt on pieces
Three times deionized waters are crossed, removal remains in the NaOH solution on sample, fishes for sample with substrate, sample is put into third after drying
The PMMA glue of sample surfaces is removed in ketone solution.
The SEM figures of graphene manufactured in the present embodiment/boron nitride hetero-junctions are as shown in figure 3, it can be seen from this figure that uniformly
Full single-layer graphene, have the boron nitride of white subband structures triangular shape above.
The XPS spectrum (B1s) of graphene manufactured in the present embodiment/boron nitride hetero-junctions by the figure as shown in figure 4, can be seen
Go out, the peak position of B1s meets the standard value of boron nitride XPS in~190.49eV.
The XPS spectrum (N1s) of graphene manufactured in the present embodiment/boron nitride hetero-junctions by the figure as shown in figure 5, can be seen
Go out, the peak position of N1s meets the standard value of boron nitride XPS in~397.8eV.
The XPS spectrum (C1s) of graphene manufactured in the present embodiment/boron nitride hetero-junctions by the figure as shown in fig. 6, can be seen
Go out, the peak position of C1s meets the C-C bonding energies of graphene in~284.38eV.
The AES that graphene manufactured in the present embodiment/boron nitride hetero-junctions is transferred on silicon chip is composed as shown in fig. 7, by this entirely
Figure is as can be seen that there are the elements such as boron, nitrogen, carbon, silicon, heterojunction regions in boron nitride region and graphene/boron nitride hetero-junctions region
The carbon element content in domain is significantly more than boron nitride region, illustrates the presence for having graphene.
The AES depth analysis that graphene manufactured in the present embodiment/boron nitride hetero-junctions is transferred to the BN regions on silicon chip is bent
Line is as shown in figure 8, it can be seen from this figure that boron nitride region boron element and nitrogen increase with sputtering time, constituent content
It gradually decreases；And the content of carbon is quickly reduced, it is sample surfaces absorption to illustrate these carbons.
Graphene manufactured in the present embodiment/boron nitride hetero-junctions is transferred to the AES depth point in the hetero-junctions region on silicon chip
Curve is analysed as shown in figure 9, it can be seen from this figure that as sputtering starts, boron, nitrogen element content start to reduce, and carbon exists
There are one increased processes at the beginning, illustrate boron nitride above graphene, should demonstrate,prove our growth mechanism.During with sputtering
Between increase, carbon also begin to slowly reduce until silicon content increase to stabilization, it may be said that the hetero-junctions on bright surface by
It has sputtered.AES sputtering conditions are that 0.1min sputter depths are 0.1nm, pass through the AES depth analysis pair with Fig. 8 boron nitride region
Than, it can be seen that hetero-junctions thickness about~2.3nm, the thickness of boron nitride about~1.7nm (passes through the finally stabilised song of element silicon
Line judges).The characterizations such as SEM, AES, XPS by above series of, it may be determined that present invention obtains high-quality vertical
Structure hetero-junction thin-film.Also illustrate that present invention growth preparation method is simple as a result, improve growth efficiency；Metallic substrates can weigh
It is multiple to use, reduce production cost；And it is that a step is directly grown, reduces the other impurities introduced in preparation process.
Embodiment 2 prepares graphene/boron nitride hetero-junctions on Cu-Ni alloys
Because the Carbon Solubility of Cu-Ni alloys and Pt are different, preparation parameter is adjusted, mainly adjusts methane
Flow and temperature-fall period.
According to the preparation method in embodiment 1, using similary preparation process, only during carbon dissolution, CH4：H2Ratio
For 5sccm：10sccm；In addition to this, last analysis carbon step is down to 900 DEG C of fast coolings again slowly with the speed of 26 DEG C/min.
The SEM figures of graphene manufactured in the present embodiment/boron nitride hetero-junctions are as shown in Figure 10, it can be seen from this figure that sub-
Single-layer silicon nitride boron (dark quadrangle) and single-layer graphene.
The optical picture of graphene manufactured in the present embodiment/boron nitride hetero-junctions is as shown in figure 11, it can be seen from this figure that full
There is the boron nitride of light quadrangle above the graphene of individual layer.
The Raman spectral peaks of graphene manufactured in the present embodiment/boron nitride hetero-junctions are as shown in figure 12, can be seen by the figure
Go out, the Raman peaks in the region of hetero-junctions region and pure graphene are had any different, and there are one 1360cm for hetero-junctions-1The peak of boron nitride, and
Only there are one very faint 1354cm in pure graphene region-1The defects of peak.
Claims (3)
1. a kind of preparation method of the two-dimensional layer hetero-junctions based on graphene, includes the following steps：
1) it will be placed in the reaction chamber of metallic substrates and be passed through hydrogen and carbon source gas, and heat the reaction chamber to make carbon dissolution in institute
It states in metallic substrates；
The metallic substrates are platinum base bottom, nickel substrate, corronil substrate, palladium base bottom or iron-based bottom；
Before step 1), the step of the method includes being vacuumized to the reaction chamber, and in atmosphere of hydrogen will described in
Metallic substrates make annealing treatment the step of 10~30min at 1000~1100 DEG C；
The temperature of the reaction chamber is heated to 700~1400 DEG C；
The carbon source gas is hydrocarbon gas；
The rate for being passed through the hydrogen is 0~1000sccm, but be not zero；
The rate for being passed through the carbon source gas is 0~500sccm, but be not zero；
2) stop being passed through the carbon source gas into the reaction chamber, continue to be passed through the hydrogen；
3) heating reaction source makes it be grown in the metallic substrates；
The preparation method carries out in CVD system；
The reaction source is placed in quartz boat and positioned at the inlet end of the CVD system；
The temperature of the growth is 65~200 DEG C, and the time of the growth can be 0~60min, but be not zero；
The reaction source be following a)-b) in it is any：
A) molybdenum trioxide and sulphur；
B) tungstic acid and sulphur；
3) temperature of the reaction chamber is reduced, the carbon dissolved in the metallic substrates is precipitated to form graphene, so far to get to base
In the two-dimensional layer hetero-junctions of graphene；
The temperature for reducing the reaction chamber is used in a manner that the rate of temperature fall of 5~26 DEG C/min is down to 600~900 DEG C.
2. preparation method according to claim 1, it is characterised in that：The method is further included described based on graphene
Two-dimensional layer hetero-junctions is transferred to the step on substrate；
It is shifted using bubbling transfer method or polystyrene transfer method.
3. preparation method according to claim 1 or 2, it is characterised in that：Before step 1), the method further includes utilization
Acetone, ethyl alcohol and deionized water are cleaned by ultrasonic the step of metallic substrates.
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| CN108502865B (en) * | 2017-02-24 | 2021-08-10 | 天津大学 | Preparation method of novel porous carbon material with self-assembled carbon nano tubes |
| CN107055467B (en) * | 2017-05-08 | 2019-06-04 | 中国科学院物理研究所 | It is used to prepare the vacuum transfer equipment of two-dimensional material Van der Waals hetero-junctions |
| CN109019569B (en) * | 2017-06-08 | 2021-05-28 | 中国科学院金属研究所 | High-quality graphene/two-dimensional metal carbide crystal vertical heterostructure material and preparation method thereof |
| CN108923257B (en) * | 2018-06-13 | 2020-03-31 | 东南大学 | Laser diode and preparation method thereof |
| CN109767992B (en) * | 2019-01-16 | 2020-11-13 | 深圳天元羲王材料科技有限公司 | Preparation method of heat dissipation layer of radiator and radiator |
| CN112110440B (en) * | 2019-06-19 | 2022-01-14 | 中国科学院金属研究所 | Preparation method of high-quality uniform multilayer graphene film with specific stacking mode |
| CN110954570B (en) * | 2019-11-11 | 2020-08-04 | 华东师范大学 | Method for stripping two-dimensional material grown on sapphire substrate by temperature control bubbling |
| CN111637801B (en) * | 2020-05-21 | 2021-05-04 | 西安交通大学 | PMMA-based graphene burst pressure test sensor and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103449415A (en) * | 2012-05-31 | 2013-12-18 | 海洋王照明科技股份有限公司 | Preparation method of boron-doped graphene |
| CN103663416A (en) * | 2012-09-01 | 2014-03-26 | 董国材 | Method for preparing graphene and single-layer hexagonal boron nitride composite material |
| CN104944417A (en) * | 2015-06-01 | 2015-09-30 | 中国科学院上海微***与信息技术研究所 | Preparation method of graphene-boron nitride heterojunction |
| CN105274491A (en) * | 2015-11-12 | 2016-01-27 | 杭州电子科技大学 | Preparation method for graphene-boron nitride heterogeneous phase composite thin film material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9410243B2 (en) * | 2013-08-06 | 2016-08-09 | Brookhaven Science Associates, Llc | Method for forming monolayer graphene-boron nitride heterostructures |
-
2016
- 2016-08-10 CN CN201610652002.8A patent/CN106145103B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103449415A (en) * | 2012-05-31 | 2013-12-18 | 海洋王照明科技股份有限公司 | Preparation method of boron-doped graphene |
| CN103663416A (en) * | 2012-09-01 | 2014-03-26 | 董国材 | Method for preparing graphene and single-layer hexagonal boron nitride composite material |
| CN104944417A (en) * | 2015-06-01 | 2015-09-30 | 中国科学院上海微***与信息技术研究所 | Preparation method of graphene-boron nitride heterojunction |
| CN105274491A (en) * | 2015-11-12 | 2016-01-27 | 杭州电子科技大学 | Preparation method for graphene-boron nitride heterogeneous phase composite thin film material |
Non-Patent Citations (1)
| Title |
|---|
| Direct Growth of Graphene Hexagonal Boron Nitride Stacked Layers;Zheng Liu, et al.;《Nano Letters》;20110413;第11卷;2032-2037 * |
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