CN106141902A - 研磨装置 - Google Patents

研磨装置 Download PDF

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CN106141902A
CN106141902A CN201610312950.7A CN201610312950A CN106141902A CN 106141902 A CN106141902 A CN 106141902A CN 201610312950 A CN201610312950 A CN 201610312950A CN 106141902 A CN106141902 A CN 106141902A
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slurry
grinding
chuck table
wafer
grinding pad
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CN106141902B (zh
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山中聪
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Disco Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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Abstract

提供研磨装置，减少浆料的使用量并高效地循环利用浆料。研磨装置(1)具有在卡盘工作台(3)的下侧存留浆料(45)而对研磨垫(25)的研磨面(25a)循环提供浆料(45)的浆料循环构件(50)，浆料循环构件(50)具有：凹形状的桶部(51)，其在卡盘工作台(3)的周围存留浆料(45)；以及空气供给构件(55)，其在存留于桶部(51)的浆料中具有朝向该研磨面(25a)喷出空气的空气喷出口(56)，因此能够在桶部(51)中存留浆料(45)并且空气供给构件(55)能够从空气喷出口(56)喷出空气并将存留在桶部(51)中的浆料(45)喷起而对研磨垫(25)的研磨面(25a)循环提供浆料(45)。由此，减少浆料(45)的使用量并且高效地循环利用浆料(45)。

Description

研磨装置
技术领域
本发明涉及一边对研磨垫的研磨面提供浆料一边对晶片进行研磨的研磨装置。
背景技术
由于当对晶片等被加工物进行磨削使其薄化时晶片的抗折强度会降低，所以通过对晶片的被加工面进行研磨来提高抗折强度。作为对晶片进行研磨的装置，例如使用能够通过被称为CMP(Chemical Mechanical Polishing：化学机械研磨)的化学机械研磨法来对晶片进行研磨的研磨装置。研磨装置一般采用将研磨垫配置在下侧、将对晶片进行保持的保持部配置在上侧的结构，一边对研磨垫的研磨面提供浆料(研磨液)一边将晶片推抵于研磨垫而进行研磨。在只进行研磨的专用装置中，提出了如下的方案：例如通过容器来回收在研磨中所使用的浆料，并使用循环泵来循环利用浆料(例如，参照下述的专利文献1)。
并且，还提出了能够使磨削和研磨在一个装置中实施的加工装置，该加工装置构成为：将对晶片进行保持的卡盘工作台配置在下侧，将磨削构件和研磨构件配置在上方侧(例如，参照下述的专利文献2)。当对磨削后的晶片进行研磨时，一边向晶片提供浆料一边将研磨垫推抵于晶片而进行研磨。
专利文献1：日本特开第3384530号公报
专利文献2：日本特许第5406676号公报
但是，在上述那样的能够对浆料进行循环利用的研磨装置中，由于当对晶片进行研磨时持续地对研磨垫的研磨面提供浆料，所以浆料的使用量变多，经济性差。并且，当通过上述的加工装置对晶片进行研磨时，由于对晶片提供的浆料从对晶片进行保持的卡盘工作台的周缘侧落下而与磨削时的磨削废液混合，所以浆料的再利用是很困难的。为了对该浆料进行再利用，需要采用浆料不与磨削废液混合的装置结构，但是采用这样的结构是很困难的。并且，由于也很难从混合有浆料的磨削废液中只回收浆料，所以能够再利用的浆料与磨削废液一起废弃，浪费了很多的浆料。
发明内容
本发明是鉴于上述的情况而完成的，其目的在于提供一种研磨装置，能够抑制浆料的使用量并且对浆料进行高效率地循环利用。
本发明的研磨装置具有：卡盘工作台，其对晶片进行保持；研磨构件，其具有主轴，该主轴将对该卡盘工作台所保持的晶片进行研磨的研磨垫安装为能够旋转，该研磨构件通过该研磨垫的研磨面对晶片进行研磨；浆料供给构件，其对该研磨垫的该研磨面和该卡盘工作台所保持的晶片的上表面提供浆料；以及研磨进给构件，其在与该卡盘工作台所保持的晶片的上表面接近和远离的方向上对该研磨构件进行研磨进给，其中，该研磨装置具有浆料循环构件，该浆料循环构件在该卡盘工作台的下侧存留该浆料而对该研磨面循环提供该浆料，该浆料循环构件具有：凹形状的桶部，其包含侧壁、底板和内侧壁，该侧壁围绕着使该研磨垫的该研磨面与该卡盘工作台所保持的晶片接触的研磨位置处的该研磨垫和该卡盘工作台，该底板与该侧壁的下部连接并在中央具有使该卡盘工作台露出的开口，该内侧壁在该开口的内周缘处竖立设置；以及空气供给构件，其在存留于该桶部的浆料之中具有朝向该研磨垫的该研磨面喷出空气的空气喷出口，从该空气喷出口喷出的空气将存留在该桶部中的该浆料喷起而对该研磨垫的该研磨面循环提供该浆料。
本发明的研磨装置具有：浆料供给构件，其对研磨垫和卡盘工作台所保持的晶片提供浆料；以及浆料循环构件，其在卡盘工作台的下侧存留浆料而对研磨垫的研磨面循环提供浆料，浆料循环构件具有：凹部形状的桶部，其在卡盘工作台的周围存留浆料；以及空气供给构件，其在存留于该桶部的浆料中具有朝向研磨垫的研磨面喷出空气的空气喷出口，因此通过浆料供给构件对研磨垫的研磨面和晶片的上表面供给浆料，即使浆料向旋转的卡盘工作台和研磨垫的周围飞散，也能够将浆料存留在桶部中。
并且，由于空气供给构件使空气从空气喷出口喷出而将存留在桶部中的浆料喷起，所以能够对研磨垫的研磨面循环提供浆料。因此，能够减少浆料的使用量，并且对浆料进行高效率地循环利用。
附图说明
图1是示出研磨装置的结构的立体图。
图2是示出研磨构件、卡盘工作台和浆料循环构件的结构的剖视图。
图3是示出一边使用浆料循环构件对研磨垫循环提供浆料一边对晶片进行研磨的状态的剖视图。
图4是示出浆料循环构件的变形例的结构的剖视图。
图5是示出一边使用浆料循环构件的变形例对研磨垫循环提供浆料一边对晶片进行研磨的状态的剖视图。
标号说明
1：研磨装置；2：装置基座；3：卡盘工作台；3a：保持面；4：电动机；5：旋转轴；6：基台；7：柱；8：加工位置传感器；9：定位部；10：Y轴方向进给构件；11：滚珠丝杠；12：轴承部；13：电动机；14：导轨；15：移动台；20：研磨构件；21：主轴；22：支架；23：电动机；24：安装座；25：研磨垫；25a：研磨面；26：贯通孔；30：研磨进给构件；31：固定部；32：滚珠丝杠；33：电动机；34：导轨；35：升降板；40：浆料供给构件；41：浆料供给管；42：供给口；43：阀；44：浆料供给源；45：浆料；45a：存液；50：浆料循环构件；51：桶部；52：侧壁；53：底板；54：内侧壁；55：空气供给构件；56：空气喷出口；57：空气供给源；58：阀；60：吸引源；61：阀；70：浆料循环构件；71：桶部；72：折皱部；73：底板；74：内侧壁；75：升降气缸；750：气缸；751：支承部；752：活塞；76：空气供给构件；77：空气喷出口；78：阀；79：空气供给源。
具体实施方式
图1所示的研磨装置1是通过CMP来对晶片进行研磨的研磨装置的一例。研磨装置1具有在Y轴方向上延伸的装置基座2，在装置基座2之上具有对晶片进行保持并且能够旋转的卡盘工作台3。卡盘工作台3的上表面为对晶片进行保持的保持面3a，未图示的吸引源与保持面3a连接。旋转轴5与卡盘工作台3的下端连结，该旋转轴5与图2所示的电动机4连接。电动机4使旋转轴5旋转，从而能够使卡盘工作台3以规定的旋转速度旋转。
在装置基座2的内部配设有在Y轴方向上延伸的基台6。在基台6之上配设有使卡盘工作台3在Y轴方向上移动的Y轴方向进给构件10。Y轴方向进给构件10具有：滚珠丝杠11，其在Y轴方向上延伸；轴承部12，其将滚珠丝杠11的一端轴承支承为能够转动；电动机13，其与滚珠丝杠11的另一端连接；一对导轨14，其与滚珠丝杠11平行延伸；以及移动台15，其从下方对卡盘工作台3进行支承。一对导轨14与移动台15的下部滑动接触，滚珠丝杠11与形成在移动台15的中央部的螺母螺合。电动机13使滚珠丝杠11转动从而能够使卡盘工作台3与移动台15一起在Y轴方向上移动。
在装置基座2的X轴方向后部竖立设置有柱7。在柱7的前方具有：研磨构件20，其对卡盘工作台3所保持的晶片进行研磨；以及研磨进给构件30，其在与卡盘工作台3所保持的晶片的上表面接近和远离的方向上对研磨构件20进行研磨进给。
研磨构件20具有：主轴21，其具有Z轴方向的轴心；支架22，其对以能够旋转的方式围绕着主轴21而进行支承的外壳进行保持；电动机23，其与主轴21的一端连接；以及研磨垫25，其借助安装座24以能够装拆的方式安装在主轴21的下端。研磨垫25的下表面是对晶片进行研磨的研磨面25a。在图2所示的主轴21的旋转中心形成有沿着轴向延伸的贯通孔26。
图1所示的研磨进给构件30具有：固定部31，其固定于柱7；滚珠丝杠32，其在Z轴方向上延伸；电动机33，其与滚珠丝杠32的一端连接；一对导轨34，其与滚珠丝杠32平行延伸；以及升降板35，其一个面与研磨构件20连结。一对导轨34与升降板35的另一个面滑动接触，滚珠丝杠32与形成在升降板35的中央部的螺母螺合。通过电动机33驱动滚珠丝杠32从而能够使研磨构件20与升降板35一起在Z轴方向上升降。
在基台2的上表面即Y轴方向进给构件10的附近配设有加工位置传感器8，该加工位置传感器8检测能够通过研磨构件20的研磨垫25对晶片进行研磨的卡盘工作台3的加工位置。在移动台15的侧面配设有由加工位置传感器8来识别的定位部9。该加工位置传感器8检测到定位部9时的卡盘工作台3的位置为加工位置。加工位置是指保持在卡盘工作台3上的晶片的上表面整个区域与至少研磨垫25的研磨面25a的中央区域重合的位置。
研磨装置1具有：浆料供给构件40，其与研磨构件20连接并向研磨垫25和卡盘工作台3所保持的晶片提供浆料；以及浆料循环构件50，其在卡盘工作台3的下方的位置存留浆料而向研磨垫25的研磨面25a循环提供浆料。
如图2所示，浆料供给构件40具有：浆料供给管41，其***到主轴21的贯通孔26中；以及浆料供给源44，其经由阀43与浆料供给管41的上端连接。在浆料供给管41的下端形成有使浆料喷出的供给口42。并且，能够通过打开阀43来使规定的供给量的浆料从浆料供给管41的供给口42朝向下方喷出。
浆料循环构件50具有：凹形状的桶部51，其围绕在卡盘工作台3的周围并存留浆料；以及空气供给构件55，其朝向研磨垫25的研磨面25a喷出空气。桶部51能够与卡盘工作台3一起在Y轴方向上移动，该桶部51包含：侧壁52，其在通过研磨构件20对晶片进行研磨的研磨位置围绕着研磨垫25和卡盘工作台3；底板53，其与侧壁52的下部连接并在中央处具有使卡盘工作台3露出的开口；以及内侧壁54，其从该开口的内周缘竖立设置。研磨位置是指在使研磨垫25的研磨面25a与保持在卡盘工作台3上的晶片的上表面接触的状态下的研磨构件20的高度位置。侧壁52延伸到比当研磨构件20位于研磨位置的情况下的研磨垫25的位置高的位置，能够在研磨加工中罩住研磨垫25和卡盘工作台3的周围，防止浆料飞散。
空气供给构件55具有：空气喷出口56，其与构成桶部51的底板53的正下方连接，形成于存留浆料的底板53；以及空气供给源57，其经由阀58与空气喷出口56连接。当在桶部51中存留了浆料的状态下打开阀58时，能够使规定的流量的空气从空气喷出口56喷出而将存留在桶部51中的浆料喷起。另外，空气喷出口56的大小为例如直径为8～10mm左右。
优选空气喷出口56形成在与卡盘工作台3接近的位置。由此，对旋转的研磨垫25的研磨面25a循环提供的浆料容易附着在保持在卡盘工作台3上的晶片上。
吸引源60经由阀61与空气喷出口56连接。关闭阀58并且打开阀61，由此能够对空气喷出口56作用吸引源60的吸引力而吸引存留在桶部51中的浆料并将浆料排出到装置外部。
接着，对研磨装置1的动作例进行说明。图2所示的晶片W为被加工物的一例，被研磨垫25研磨的上表面Wa是被研磨面。另一方面，位于上表面Wa的相反侧的面成为被吸引保持在卡盘工作台3的保持面3a上的下表面Wb。
在将晶片W载置到卡盘工作台3的保持面3a上之后，通过吸引源的吸引力将晶片W吸引保持在保持面3a上。图1所示的Y轴方向进给构件10的电动机13使滚珠丝杠11转动，并使卡盘工作台3与移动基台15一起在Y轴方向上移动。并且，当加工位置传感器8检测到定位部9，其识别出卡盘工作台3已定位于加工位置，研磨进给构件30的电动机33使滚珠丝杠32转动，并使研磨构件20与升降板35一起下降。
如图3所示，关于浆料供给构件40，打开阀43而使浆料供给源44与浆料供给管41连通，使规定的供给量的浆料流入浆料供给管41，并使浆料45沿着浆料供给管41从供给口42喷出。作为浆料的供给量，例如设定为100～200ml/min。
一边对研磨垫25在相对于卡盘工作台3接近的方向上进行研磨进给，旋转主轴21一边以使研磨垫25按照箭头A方向以例如1000rpm旋转，并使卡盘工作台3按照箭头A方向以例如300rpm旋转。并且，使一边下降一边旋转的研磨垫25的研磨面25a与旋转的晶片W的上表面Wa的整个面接触，使研磨垫25与晶片W相对地滑动。
此时，当从浆料供给管41的喷出口42喷出的浆料45被提供到旋转的晶片W的上表面Wa和研磨垫25的研磨面25a而进入上表面Wa与研磨面25a之间时，浆料45所起到的化学作用和研磨垫25所起到的机械作用协同作用，能够对晶片W的上表面Wa进行研磨。在晶片W的研磨中，浆料45溅落到侧壁52上或者从卡盘工作台3的周缘流下而存留到桶部51中。在桶部51中存留100～200ml的浆料。
当规定的供给量的浆料45流入了浆料供给管41之后，浆料供给构件40将阀43关闭。接着，空气供给构件55使规定的流量的空气从空气喷出口56喷出而对研磨垫25的研磨面25a循环提供浆料45，其中，该空气喷出口56被存留在桶部51中的浆料的存液45a覆盖。空气的流量被设定为例如50l/min。
具体地说，关于空气供给构件55，打开阀58而使空气供给源57与空气喷出口56连通，使规定的流量的空气从空气喷出口56朝向研磨垫25的研磨面25a喷出。该喷出的空气从存留在桶部51中的浆料的存液45a的下方施加压力而将浆料45喷起，由此，对旋转中的研磨垫25的研磨面25a循环提供浆料45。
对旋转的研磨垫25的研磨面25a提供的浆料45因研磨垫25的旋转而被带动，也附着在保持于卡盘工作台3上的晶片W的上表面Wa上而被用于对上表面Wa的研磨。这样在晶片W的研磨加工结束之后，关闭阀58并且打开阀61而使吸引源60与空气喷出口56连通，吸引存留在桶部51中的浆料45并将浆料45排出到装置外部。
这样，研磨装置1所具有的浆料循环构件50具有：凹形状的桶部51，其在卡盘工作台3的周围存留浆料45；以及空气供给构件55，其在存留于桶部51的浆料之中具有朝向研磨垫25的研磨面25a喷出空气的空气喷出口56，因此从构成浆料供给构件40的浆料供给管41对研磨垫25的研磨面25a和晶片W的上表面Wa提供规定的供给量的浆料45，即使浆料45向卡盘工作台3和研磨垫25的周围飞散，也能够将浆料45存留在桶部51中。
由于当在桶部51中存留了浆料45之后，空气供给构件55使空气从空气喷出口56喷出而将存留在桶部51中的浆料45喷起，所以能够对研磨垫25的研磨面25a循环提供浆料45。
因此，能够将浆料45的使用量抑制到所需的最小限度，对浆料45进行高效率地循环利用。
图4所示的浆料循环构件70是浆料循环构件的变形例。浆料循环构件70具有存留浆料的凹部形状的桶部71和与桶部71的下方侧连接并喷出空气的空气供给构件76。桶部71包含：折皱部72，其能够在上下方向上伸缩；底板73，其与折皱部72的下端部连接并在中央处具有使卡盘工作台3露出的开口；以及内侧壁74，其从该开口的内周缘竖立设置。空气供给构件76与上述空气供给构件55同样地具有：空气喷出口77，其形成在底板73中；以及空气供给源79，其经由阀78与空气喷出口77连接。使折皱部72伸缩的升降气缸75与折皱部72连接。升降气缸75包含：气缸750；支承部751，其与折皱部72的上端部连结；以及活塞752，其与支承部751连接。
如图5所示，当一边通过浆料循环构件70对研磨垫25循环提供浆料，一边通过研磨垫25对晶片W进行研磨时，活塞752在气缸750的内部朝向上方侧移动，由此使支承部751上升而使折皱部72伸长，通过折皱部72将研磨位置处的研磨垫25和卡盘工作台3的周围围绕。通过采用这样根据需要来使折皱部72在上下方向上伸缩的结构，由此，在研磨中以外的情况下，能够通过使折皱部72退避到下方来防止折皱部72成为障碍。之后，浆料循环构件70与上述的浆料循环构件50同样地，打开阀78，使空气供给源79与空气喷出口77连通而使规定的流量的空气从空气喷出口77喷出，将浆料45从桶部51喷起而向研磨垫25的研磨面25a循环提供浆料45。浆料循环构件70也能够将浆料45的使用量抑制到所需的最小限度并对浆料45进行高效率地循环利用。
上述实施方式所示的浆料供给构件40构成为：将浆料供给管41***到主轴21的贯通孔26中而对研磨垫25和晶片W的上表面Wa供给浆料45，但是，例如也可以构成为：与研磨构件分开而将浆料供给构件配置在桶部51、71的上方来向桶部51、71直接供给浆料。
并且，在上述实施方式中，一边从浆料供给构件40提供浆料并通过研磨垫对晶片进行研磨，一边将浆料存留在桶部51中，但是也可以在使研磨垫与晶片接触之前提供浆料而在桶部51、71中存留了规定的量的浆料之后，再使研磨垫25与晶片接触并通过空气供给构件55提供空气而对研磨垫25的研磨面25a循环提供浆料45。
在研磨装置1中，也可以构成为：每当对任意的规定的张数的晶片W进行研磨便将存留在桶部51、71中的浆料排出，并在下一个晶片W的研磨时重新在桶部51、71中存留浆料。如果每当对规定的多张晶片W进行研磨便替换存留在桶部51、71中的浆料，则能够以相同的加工速率对晶片W进行高效率地研磨加工。
上述实施方式所示的浆料循环构件50、70除了搭载在研磨装置1中之外，还可以搭载在能够进行磨削和研磨的加工装置中。在这样的加工装置中，通过设置浆料循环构件，从而能够不使浆料与磨削液混合而只对浆料进行再利用，因此不需要废弃浆料。另外，当在该加工装置中对晶片进行研磨时，优选预先通过清洗机构等对桶部51、71进行清洗而将包含磨削屑等的磨削废液去除。

Claims (1)

1.一种研磨装置，其具有：
卡盘工作台，其对晶片进行保持；
研磨构件，其具有主轴，该主轴将对该卡盘工作台所保持的晶片进行研磨的研磨垫安装为能够旋转，该研磨构件通过该研磨垫的研磨面对晶片进行研磨；
浆料供给构件，其对该研磨垫的该研磨面和该卡盘工作台所保持的晶片的上表面提供浆料；以及
研磨进给构件，其在与该卡盘工作台所保持的晶片的上表面接近和远离的方向上对该研磨构件进行研磨进给，
其中，
该研磨装置具有浆料循环构件，该浆料循环构件在该卡盘工作台的下侧存留该浆料而对该研磨面循环提供该浆料，
该浆料循环构件具有：
凹形状的桶部，其包含侧壁、底板和内侧壁，该侧壁围绕着使该研磨垫的该研磨面与该卡盘工作台所保持的晶片接触的研磨位置处的该研磨垫和该卡盘工作台，该底板与该侧壁的下部连接并在中央具有使该卡盘工作台露出的开口，该内侧壁在该开口的内周缘处竖立设置；以及
空气供给构件，其在存留于该桶部的浆料之中具有朝向该研磨垫的该研磨面喷出空气的空气喷出口，
从该空气喷出口喷出的空气将存留在该桶部中的该浆料喷起而对该研磨垫的该研磨面循环提供该浆料。
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