CN106131444A - A kind of hardware realizes the imageing sensor that high dynamic illumination renders - Google Patents
A kind of hardware realizes the imageing sensor that high dynamic illumination renders Download PDFInfo
- Publication number
- CN106131444A CN106131444A CN201610531557.7A CN201610531557A CN106131444A CN 106131444 A CN106131444 A CN 106131444A CN 201610531557 A CN201610531557 A CN 201610531557A CN 106131444 A CN106131444 A CN 106131444A
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- China
- Prior art keywords
- light
- reaction
- high dynamic
- imageing sensor
- dynamic illumination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005286 illumination Methods 0.000 title claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000003471 mutagenic agent Substances 0.000 claims 3
- 231100000707 mutagenic chemical Toxicity 0.000 claims 3
- 238000003384 imaging method Methods 0.000 abstract description 10
- 230000002441 reversible effect Effects 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- -1 silver halide Chemical class 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/741—Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention relates to a kind of hardware and realize the imageing sensor that high dynamic illumination renders, be made up of photochromatic layer and cmos image sensor, described photochromatic layer is positioned at the photosensitive unit front of cmos image sensor, and photochromic layer thickness is 2 20 microns.The present invention occurs reversible reaction to react at high light imaging, produce dark matter and weaken the imaging of high light, make imaging all obtain obvious level in Gao Guang, dark position simultaneously, realize the purpose that high dynamic illumination renders reaching hardware, compared with realizing, with existing software processes, the picture that high dynamic illumination renders, the picture light intensity using present invention shooting is more nearly the image of eye-observation, and image is more natural.
Description
Technical field
The present invention relates to a kind of hardware and realize the imageing sensor that high dynamic illumination renders.
Background technology
Existing imageing sensor shoots under big light is than environment, because being limited by dynamic range, it is impossible to record is extreme
Bright or dark details, Gao Guang, dark position can not obtain obvious level simultaneously.
In the film pick-up age, people, when dark place rinses, add light or dim light through local, increase and decrease photo light position with dark
The level of position.
Now, when selecting the photographing unit of HDR function, the figure of relatively ISO selected by the camera of some models
As sensor, raising shutter speed is utilized to reduce exposure, to preserve the details of more high light part.After reducing exposure, phase
Machine will utilize built-in image processor to carry out software processes, adds light to the local local beyond highlights, makes whole photo
Shadow recover normal.But due to dark position was highlighted by the later stage, therefore noise can be the most obvious.
High light, dark position can be made to obtain obvious level although the software later stage processes simultaneously, but its effect and shooting number of fields and
Processing Algorithm is relevant, final composograph noise meeting showed increased, and composograph is unnatural, and synthesis vestige is obvious.
Summary of the invention
Present invention aim at being difficult to make Gao Guang, dark position simultaneously than in the case of environment for the big light of conventional images sensor
The shortcoming obtaining obvious level, it is provided that a kind of hardware realizes the imageing sensor that high dynamic illumination renders, it weakens the one-tenth of high light
Picture so that imaging simultaneously all obtains obvious level in Gao Guang, dark position, realizes the purpose that high dynamic illumination renders reaching hardware.
For reaching above-mentioned purpose, the present invention adopts the following technical scheme that
A kind of hardware realizes the imageing sensor that high dynamic illumination renders, and is made up of photochromatic layer and cmos image sensor,
Described photochromatic layer is positioned at the photosensitive unit front of cmos image sensor, and photochromic layer thickness is 2-20 micron.
Described photochromatic layer is made up of silicon dioxide and photochromic material, and photochromic material is evenly distributed on dioxy
In SiClx carrier, photochromic material is the combination of a kind of material or many kinds of substance, can be, but not limited to as silver halide etc..At light
A kind of dark matter of generation that reacts rapidly under line irradiation weakens light and passes through.
Described photochromatic layer light transmittance under high light is less than the light transmittance under the low light level, but high light passes through photochromatic layer
After light intensity more than the low light level light intensity by photochromatic layer.
The reaction that described photochromic material occurs is a kind of reaction or the combination of multiple reaction, and light is at least a part of which
One of a kind of essential condition of reaction, the light making photochromic material react includes luminous ray and invisible ray,
Its course of reaction is reversible, and the extent of reaction becomes dependency relation with light luminance, and the reaction of photochromic material is local, phase
Do not interfere with between Hu, separate.
Compared with prior art, the beneficial effects of the present invention is:
The present invention occurs reversible reaction to react at high light imaging, produces dark matter and weakens the imaging of high light so that imaging is same
Shi Gao light, dark position all obtain obvious level, realize the purpose that high dynamic illumination renders, with existing software processes reaching hardware
Realize the picture that high dynamic illumination renders to compare, use the picture light intensity of present invention shooting to be more nearly the image of eye-observation,
Image is more natural.
Accompanying drawing explanation
Fig. 1 is the structural representation of imageing sensor of the present invention.
Fig. 2 is the generalized section of imageing sensor of the present invention.
Detailed description of the invention
Below by the detailed description of the invention further instruction present invention:
As depicted in figs. 1 and 2, a kind of hardware realizes the imageing sensor that high dynamic illumination renders, by photochromatic layer 1 and CMOS
Imageing sensor 2 forms, and described photochromatic layer 1 is positioned at the photosensitive unit front of cmos image sensor 2, photochromatic layer 1
Thickness is 2-20 micron.
Described photochromatic layer 1 is made up of silicon dioxide and photochromic material, and photochromic material is evenly distributed on two
In silica support, photochromic material is the combination of a kind of material or many kinds of substance, reacts rapidly under light irradiates
Produce a kind of dark matter weakening light to pass through.
The described photochromatic layer 1 light transmittance under high light is less than the light transmittance under the low light level, but high light is by photochromic
Light intensity after layer 1 passes through the light intensity of photochromatic layer 1 more than the low light level.
The reaction that described photochromic material occurs is a kind of reaction or the combination of multiple reaction, and light is at least a part of which
One of a kind of essential condition of reaction, the light making photochromic material react includes luminous ray and invisible ray,
Its course of reaction is reversible, and the extent of reaction becomes dependency relation with light luminance, and the reaction of photochromic material is local, phase
Do not interfere with between Hu, separate.
With silver halide in the present embodiment, silver halide and copper, as photochromic material, are used conventional high-temperature fusion process by copper
Add in silicon dioxide, make the thin slice of 10 microns, be close to cmos image sensor 2 photosensitive unit as photochromatic layer 1
Front.When optical system falls in the photochromatic layer 1 in cmos image sensor 2 photosensitive unit front in focal plane imaging
On, in the local generation reversible chemical reaction that light intensity is stronger, producing elemental silver, elemental silver weakens the imaging of high light so that
Optical system imaging on cmos image sensor 2 photosensitive unit all obtains obvious level in Gao Guang, dark position, to reach simultaneously
The purpose that high dynamic illumination renders is realized to hardware.When the light projecting photochromatic layer 1 dies down, photochromic material is sent out
Raw back reaction, elemental silver and halogen family simple substance generation combination reaction, generate transmission substance silver halide, so that decreased light can to the greatest extent may be used
The photosensitive unit being arrived cmos image sensor 2 by photochromatic layer 1 of energy, to strengthen image quality.
Claims (4)
1. a hardware realizes the imageing sensor that high dynamic illumination renders, it is characterised in that by photochromatic layer (1) and CMOS
Imageing sensor (2) forms, and described photochromatic layer (1) is positioned at the photosensitive unit front of cmos image sensor (2), light-induced variable
Chromatograph (1) thickness is 2-20 micron.
Hardware the most according to claim 1 realizes the imageing sensor that high dynamic illumination renders, it is characterised in that described light
Mutagens chromatograph (1) is made up of silicon dioxide and photochromic material, and photochromic material is evenly distributed in silica supports,
Photochromic material is the combination of a kind of material or many kinds of substance, a kind of dark thing of the generation that reacts rapidly under light irradiates
Matter weakens light and passes through.
Hardware the most according to claim 1 realizes the imageing sensor that high dynamic illumination renders, it is characterised in that described light
The mutagens chromatograph (1) light transmittance under high light is less than the light transmittance under the low light level, but high light is by the light intensity after photochromatic layer (1)
More than the low light level light intensity by photochromatic layer (1).
Hardware the most according to claim 2 realizes the imageing sensor that high dynamic illumination renders, it is characterised in that described light
The reaction that mutagens color substance occurs is a kind of reaction or the combination of multiple reaction, and light is necessity of at least one of which reaction
One of condition, the light making photochromic material react includes luminous ray and invisible ray, and its course of reaction is can
Inverse, the extent of reaction becomes dependency relation with light luminance, and the reaction of photochromic material is local, does not the most do
Disturb, separate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610531557.7A CN106131444A (en) | 2016-07-08 | 2016-07-08 | A kind of hardware realizes the imageing sensor that high dynamic illumination renders |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610531557.7A CN106131444A (en) | 2016-07-08 | 2016-07-08 | A kind of hardware realizes the imageing sensor that high dynamic illumination renders |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106131444A true CN106131444A (en) | 2016-11-16 |
Family
ID=57282344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610531557.7A Pending CN106131444A (en) | 2016-07-08 | 2016-07-08 | A kind of hardware realizes the imageing sensor that high dynamic illumination renders |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106131444A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070121437A1 (en) * | 2005-11-29 | 2007-05-31 | Canon Kabushiki Kaisha | Optical information recording-reproduction apparatus |
| CN101376753A (en) * | 2007-09-01 | 2009-03-04 | 徐跃 | Photochromic coating |
| CN103268881A (en) * | 2013-05-28 | 2013-08-28 | 北京思比科微电子技术股份有限公司 | Image sensor with high dynamic range |
-
2016
- 2016-07-08 CN CN201610531557.7A patent/CN106131444A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070121437A1 (en) * | 2005-11-29 | 2007-05-31 | Canon Kabushiki Kaisha | Optical information recording-reproduction apparatus |
| CN101376753A (en) * | 2007-09-01 | 2009-03-04 | 徐跃 | Photochromic coating |
| CN103268881A (en) * | 2013-05-28 | 2013-08-28 | 北京思比科微电子技术股份有限公司 | Image sensor with high dynamic range |
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| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161116 |