CN106130545A - A kind of automatic biasing PLL ruggedized construction of Anti-single particle radiation - Google Patents
A kind of automatic biasing PLL ruggedized construction of Anti-single particle radiation Download PDFInfo
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- CN106130545A CN106130545A CN201610430735.7A CN201610430735A CN106130545A CN 106130545 A CN106130545 A CN 106130545A CN 201610430735 A CN201610430735 A CN 201610430735A CN 106130545 A CN106130545 A CN 106130545A
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- 239000002245 particle Substances 0.000 title claims abstract description 56
- 238000010276 construction Methods 0.000 title claims abstract description 20
- 230000005855 radiation Effects 0.000 title claims abstract description 19
- 230000000694 effects Effects 0.000 claims abstract description 38
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 238000004458 analytical method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 101100263704 Arabidopsis thaliana VIN3 gene Proteins 0.000 description 2
- 101100540498 Arabidopsis thaliana VIP4 gene Proteins 0.000 description 2
- 101100540499 Arabidopsis thaliana VIP5 gene Proteins 0.000 description 2
- 101000953492 Homo sapiens Inositol hexakisphosphate and diphosphoinositol-pentakisphosphate kinase 1 Proteins 0.000 description 2
- 101000953488 Homo sapiens Inositol hexakisphosphate and diphosphoinositol-pentakisphosphate kinase 2 Proteins 0.000 description 2
- 102100037739 Inositol hexakisphosphate and diphosphoinositol-pentakisphosphate kinase 1 Human genes 0.000 description 2
- 102100037736 Inositol hexakisphosphate and diphosphoinositol-pentakisphosphate kinase 2 Human genes 0.000 description 2
- 101100102627 Oscarella pearsei VIN1 gene Proteins 0.000 description 2
- 101150077913 VIP3 gene Proteins 0.000 description 2
- 238000007596 consolidation process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004223 radioprotective effect Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/089—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
- H03L7/0891—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump
- H03L7/0893—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump the up-down pulses controlling at least two source current generators or at least two sink current generators connected to different points in the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
Landscapes
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
The present invention relates to the automatic biasing PLL ruggedized construction of a kind of Anti-single particle radiation, this automatic biasing PLL ruggedized construction is by differentiating that in non-reinforced automatic biasing PLL, single particle effect is to VBACKThe impact of signal, produces circuit to the automatic biasing that single particle effect is sensitive and reinforces, and obtaining can the V of anti-single particle effectBACKRSignal;And by the small-signal of the first voltage controlled oscillator output after amplifying, then decided by vote by voting machine, export stable PLL output signal.The present invention, compared with non-reinforced automatic biasing PLL, has more preferable anti-single particle effect capability, and disclosure satisfy that the demand of aerospace applications.
Description
Technical field
The present invention relates to phaselocked loop (PLL) circuit, the automatic biasing PLL ruggedized construction of a kind of Anti-single particle radiation.
Background technology
When electronic device works in space, can be bombarded by high energy proton, high-energy neutron and universe heavy ion.Clash into
Itself, and clash into the secondary produced, all can ionize electron hole pair on body silicon;When the amount of charge of ionization accumulation reaches
During to certain magnitude, circuit state can be produced disturbance.As: the transient pulse in the storage bit flipping of class unit, combination logic
Deng, these effects are commonly referred to as single particle effect.
Under large scale process conditions, single particle effect mainly shows as single-particle inversion, main shadow to the impact of circuit
Ring the circuit of band storage organization.And for small size, circuit not only can be affected by Single event upset effecf, the most also
Can be affected by single-ion transient state disturbance effect.The stability that electronic device is applied by above two effect in space and can
Huge threat is created by property.
Expand the circuit structure research much about single particle effect Design of Reinforcement.Enter deep-submicron
After technique, how under the conditions of seldom taking system power dissipation and area, improve the ability of device anti-single particle effect, always
The emphasis that everybody pays close attention to.
Along with improving constantly of circuit level, phaselocked loop (Phase-Locked-Loop, PLL) has become as in circuit
Indispensable module.When aerospace applications, the temporary disturbance that single particle effect produces can make PLL circuit losing lock, affects whole
The stability of Circuits System.
As it is shown in figure 1, be non-reinforced automatic biasing PLL circuit structure chart.Automatic biasing PLL is to utilize feedback biasing to produce one
Mutual conductance forms the equivalent transconductance cancellation of zero point and voltage controlled oscillator, thus obtain a natural frequency, damped coefficient and technique,
Power supply, temperature are unrelated, become weak relevant phaselocked loop to multiplier parameter N.Automatic biasing PLL circuit by phase frequency detector (PFD) 1,
One electric charge pump (CP1) the 2, second electric charge pump (CP2) 3, automatic biasing produce circuit (Bias Gen) 41, voltage controlled oscillator (VCO) 5,
First electric capacity C1 and the second electric capacity C2 composition.Wherein CLKIN passes through phase frequency detector 1 for input datum, PLL output signal
With the comparison that CLKIN signal carries out frequency and phase place, output U1/D1, U2/D2 signal gives the first electric charge pump 2 and the second electric charge pump
3, the output of two groups of electric charge pumps, through the first electric capacity C1 and the second electric capacity C2, produces circuit 41 to automatic biasing and inputs VBIAS biasing
Signal.Automatic biasing generation circuit 41 produces VBACK signal and feeds back to the first electric charge pump 2 and the second electric charge pump 3, for control first
Electric charge pump 2 and the discharge and recharge of the second electric charge pump 3.Meanwhile, automatic biasing produces circuit 41 and produces VBP, VBN signal to voltage controlled oscillator
5.Voltage controlled oscillator 5 is made up of the first to the 5th delay unit and amplifier, the little letter that the 5th delay unit is exported by amplifier
After number amplifying, form final PLL output.
As in figure 2 it is shown, be the voltage controlled oscillator 5 internal circuit configuration figure of non-reinforced automatic biasing PLL circuit.Voltage controlled oscillator
5 by first delay unit the 51, second delay unit the 52, the 3rd delay unit the 53, the 4th delay unit the 54, the 5th delay unit 55
And amplifier 56 forms.First delay unit 51 inputs VIP1 and meets the output VOP5 of the 5th delay unit 55, and VIN1 connects the 5th and prolongs
The output VON5 of Shi Danyuan 55.Second delay unit 52 inputs VIP2 and meets the output VOP1, VIN2 of the first delay unit 51 and connect
The output VON1 of one delay unit 51.3rd delay unit 53 inputs VIP3 and meets the output VOP2 of the second delay unit 52, VIN3
Meet the output VON2 of the second delay unit 52.4th delay unit 54 inputs VIP4 and meets the output VOP3 of the 3rd delay unit 53,
VIN4 meets the output VON3 of the 3rd delay unit 53.5th delay unit 55 inputs VIP5 and connects the output of the 4th delay unit 54
VOP4, VIN5 meet the output VON4 of the 4th delay unit 54.The output VOP5 of the 5th delay unit 55 and VON5 signal are as putting
The differential input signal of big device 56 input, two signals, after amplifying, ultimately form PLL output.
As in Figure 3-5, analyze for VBACK signal in non-reinforced automatic biasing PLL and VBN, VBP signal single particle effect
Figure.Such as Fig. 3, after VBACK signal is affected by single particle effect, PLL output lost two pulse letters compared with CLKIN
Number, illustrate that VBACK signal is sensitive to single particle effect.Such as Fig. 4, after VBN signal is affected by single particle effect, PLL exports
Lost a pulse signal compared with CLKIN, also explanation VBN signal is sensitive to single particle effect.Such as Fig. 5, when VBP signal is subject to
After affecting to single particle effect, PLL output has the dutycycle of a pulse signal to become very severe, almost compared with CLKIN
Can not be used by circuit, same explanation VBP signal is the most sensitive to single particle effect.
Summary of the invention
When the technical problem to be solved in the present invention is application in aerospace environment, automatic biasing PLL is by single particle effect shadow
Ring so that circuit performance deteriorates, losing lock, it is provided that the automatic biasing PLL ruggedized construction of a kind of Anti-single particle radiation, this structure has more
Good anti-single particle effect capability, and disclosure satisfy that the demand of aerospace applications.
In order to solve above-mentioned technical problem, the invention provides following technical scheme:
The automatic biasing PLL ruggedized construction of a kind of Anti-single particle radiation of the present invention, this automatic biasing PLL ruggedized construction is by sentencing
In other non-reinforced automatic biasing PLL, single particle effect is to VBACKThe impact of signal, produces electricity to the automatic biasing that single particle effect is sensitive
Road reinforces, and obtaining can the V of anti-single particle effectBACKRSignal;And the small-signal of the first voltage controlled oscillator output is passed through
After amplification, then decided by vote by voting machine, export stable PLL output signal.
Further, automatic biasing PLL ruggedized construction include phase frequency detector, the first electric charge pump, the second electric charge pump, first from
Offset generating circuit, the second automatic biasing produce circuit, the 3rd automatic biasing produces circuit, the first voltage controlled oscillator, the first electric capacity C1
With the second electric capacity C2, by differentiating that single particle effect is to V in non-reinforced automatic biasing PLLBACKThe impact of signal, selects the most certainly
Biasing PLL circuit output electric current, uses first, second, third automatic biasing to produce circuit, makes the V of feedbackBACKRVoltage is at single-particle
Radiation environment keeps stable, make the first electric charge pump and the second electric charge pump to the first electric capacity C1 and the charge and discharge electric energy of the second electric capacity C2
Trying hard to keep, it is fixed to keep steady, and makes first, second, third automatic biasing produce output signal V of circuitBNRAnd VBPRKeep stable, so that the
One voltage controlled oscillator input biasing keeps stable.
Further, the first voltage controlled oscillator include the first delay unit, the second delay unit, the 3rd delay unit,
Four delay units, the 5th delay unit, the first amplifier, the second amplifier, the 3rd amplifier and voting machine, to the 5th time delay list
Signal VOP5 and VON5 of unit's output is amplified by first, second, third amplifier, exports the signal after three tunnels are amplified,
Decide by vote through voting machine again, export final PLL output signal.
Beneficial effects of the present invention:
1, compared with non-reinforced automatic biasing PLL, this automatic biasing PLL ruggedized construction improves circuit and works in aerospace environment
Reliability, it is ensured that automatic biasing PLL circuit will not be occurred losing lock when affecting by single particle effect.
2, this automatic biasing PLL ruggedized construction is by finding out node sensitive to single particle effect in circuit, and differentiates simple grain
Sub-effect is to VBACKThe impact of signal, and then select suitable automatic biasing PLL circuit to export electric current;Simultaneously to the first VCO
Three tunnel votings are carried out after device output low level signal amplification;Compared with the PLL of overall situation triplication redundancy Design of Reinforcement, have employed less face
Amass and power consumption, and reached identical consolidation effect.
Accompanying drawing explanation
Fig. 1 is non-reinforced automatic biasing PLL circuit structure chart;
Fig. 2 is the voltage controlled oscillator internal circuit configuration figure of non-reinforced automatic biasing PLL circuit;
Fig. 3 is VBACK signal single particle effect analysis chart in non-reinforced automatic biasing PLL;
Fig. 4 is VBN signal single particle effect analysis chart in non-reinforced automatic biasing PLL;
Fig. 5 is VBP signal single particle effect analysis chart in non-reinforced automatic biasing PLL;
Fig. 6 is the automatic biasing PLL ruggedized construction figure of a kind of Anti-single particle radiation of the present invention;
Fig. 7 is the first voltage controlled oscillator internal junction of the automatic biasing PLL ruggedized construction of a kind of Anti-single particle radiation of the present invention
Composition.
Detailed description of the invention
Embodiment cited by the present invention, is only intended to help and understands the present invention, should not be construed as the present invention is protected model
The restriction enclosed, for those skilled in the art, without departing from the inventive concept of the premise, it is also possible to right
The present invention makes improvements and modifications, and these improve and modification also falls in the range of the claims in the present invention protection.
The invention will be further described below in conjunction with the accompanying drawings.
As shown in Figure 6, for the automatic biasing PLL ruggedized construction figure of a kind of Anti-single particle radiation of the present invention;This automatic biasing PLL adds
Fixing structure includes that phase frequency detector the 1, first electric charge pump the 2, second electric charge pump the 3, first automatic biasing produces circuit the 42, second automatic biasing
Produce circuit the 43, the 3rd automatic biasing and produce circuit the 44, first voltage controlled oscillator the 6, first electric capacity C1 and the second electric capacity C2.Wherein
CLKIN is input datum, and PLL output signal carries out the ratio of frequency and phase place by phase frequency detector 1 and CLKIN signal
Relatively, output U1/D1, U2/D2 signal gives the first electric charge pump 2 and the second electric charge pump 3, and the output of two groups of electric charge pumps is through the first electric capacity
C1 and the second electric capacity C2, produces circuit the 42, second automatic biasing to the first automatic biasing and produces circuit the 43, the 3rd automatic biasing generation circuit
44 input VBIAS offset signals.So that the first automatic biasing produces circuit the 42, second automatic biasing and produces circuit the 43, the 3rd self-bias
Raw circuit 44 of buying property generation is not susceptible to the VBACKR signal of single particle effect disturbance and feeds back to the first electric charge pump 2 and the second electric charge
Pump 3, for controlling the first electric charge pump 2 and discharge and recharge of the second electric charge pump 3.Meanwhile, the first automatic biasing produces circuit 42, second certainly
Offset generating circuit the 43, the 3rd automatic biasing produces circuit 44 and produces VBNR, VBPR signal to the first voltage controlled oscillator 6.First pressure
Controlled oscillator 6 includes first to the 5th delay unit the 51,52,53,54,55, first to the 3rd amplifier 61,62,63 and voting
Device 64, after the low level signal amplification that the 5th delay unit 55 is exported by the first to the 3rd amplifier 61,62,63, by voting machine 64
Voting, forms final radioprotective automatic biasing PLL output.
As it is shown in fig. 7, be the first voltage controlled oscillator of the automatic biasing PLL ruggedized construction of a kind of Anti-single particle radiation of the present invention
6 cut-away views;This first voltage controlled oscillator 6 includes first delay unit the 51, second delay unit the 52, the 3rd delay unit
53, the 4th delay unit the 54, the 5th delay unit 55 and first amplifier the 61, second amplifier the 62, the 3rd amplifier 63, voting
Device 64.First delay unit 51 inputs VIP1 and meets the output VOP5 of the 5th delay unit 55, and VIN1 connects the 5th delay unit 55
Output VON5.Second delay unit 52 inputs VIP2 and meets the output VOP1, VIN2 of the first delay unit 51 and connect the first delay unit
The output VON1 of 51.3rd delay unit 53 inputs VIP3 and meets the output VOP2 of the second delay unit 52, and VIN3 connects the second time delay
The output VON2 of unit 52.4th delay unit 54 inputs VIP4 and meets the output VOP3 of the 3rd delay unit 53, VIN4 and connect the 3rd
The output VON3 of delay unit 53.5th delay unit 55 inputs VIP5 and meets the output VOP4 of the 4th delay unit 54, VIN5 and connect
The output VON4 of the 4th delay unit 54.Output VOP5 and the VON5 signal of the 5th delay unit 55 amplify as first to the 3rd
The differential input signal of device 61,62,63 input, two signals, after amplifying, export respective waveform, through voting machine 64
Voting, forms final radioprotective automatic biasing PLL output.
The operation principle of the present invention:
The present invention utilizes by differentiating the single particle effect impact on VBACK signal in non-reinforced automatic biasing PLL, Jin Erxuan
Select suitable automatic biasing PLL circuit output electric current, utilize first, second, third automatic biasing to produce circuit 42,43,44, make feedback
VBACKR voltage in single-particle radiation environment, keep stable, and then stabilize the first electric charge pump 2 and the second electric charge pump 3 to the
One electric capacity C1 and the charging and discharging capabilities of the 2nd C2, make first, second, third automatic biasing produce the output signal of circuit 42,43,44
VBNR and VBPR keeps stable, so that the first voltage controlled oscillator 6 input biasing keeps stable.Meanwhile, employing first, second,
3rd automatic biasing produces circuit 42,43,44 structure, it is to avoid the impact that single particle effect produces circuit to single automatic biasing involves
Stablizing of whole pll system.
Meanwhile, the small-signal exporting the first voltage controlled oscillator 6 is decided by vote after being amplified, and exports the 5th delay unit 55
Signal VOP5 and VON5 be amplified by first, second, third amplifier 61,62,63, export the letter after three tunnels are amplified
Number, then decide by vote through voting machine 64, export final PLL output signal, thus it is unstable right to avoid the output of single amplifier
The impact that PLL causes.
The present invention utilizes single-particle to radiate emulation technology, and automatic biasing PLL devising a kind of Anti-single particle radiation adds consolidation
Structure.Compared with non-reinforced automatic biasing PLL, this structure is by designing the radiation hardened of circuit, thus has more preferable anti-simple grain
Sub-effect capability, and disclosure satisfy that the demand of aerospace applications.The present invention is by differentiating single particle effect in non-reinforced automatic biasing PLL
Impact on VBACK signal, thus the automatic biasing that single particle effect is sensitive is produced circuit and reinforces, obtain resisting simple grain
The VBACKR signal of sub-effect.Meanwhile, the small-signal exporting the first voltage controlled oscillator 6 is after amplifier amplifies, then passes through
Voting machine is put to the vote, it is ensured that stablizing of output signal, thus improves the ability of automatic biasing PLL anti-single particle effect, it is ensured that
Automatic biasing PLL not losing lock in radiation environment.
Claims (3)
1. the automatic biasing PLL ruggedized construction of an Anti-single particle radiation, it is characterised in that: described automatic biasing PLL ruggedized construction is
By differentiating that in non-reinforced automatic biasing PLL, single particle effect is to VBACKThe impact of signal, the automatic biasing sensitive to single particle effect
Producing circuit (41) to reinforce, obtaining can the V of anti-single particle effectBACKRSignal;And the first voltage controlled oscillator (6) is exported
Small-signal through amplification after, then by voting machine (64) decide by vote, export stable PLL output signal.
The automatic biasing PLL ruggedized construction of Anti-single particle radiation the most according to claim 1, it is characterised in that: described self-bias
Put PLL ruggedized construction and include that phase frequency detector (1), the first electric charge pump (2), the second electric charge pump (3), the first automatic biasing produce circuit
(42), the second automatic biasing produces circuit (43), the 3rd automatic biasing produces circuit (44), the first voltage controlled oscillator (6), the first electric capacity
C1 and the second electric capacity C2, by differentiating that in non-reinforced automatic biasing PLL, single particle effect is to VBACKThe impact of signal, selects suitably
Automatic biasing PLL circuit output electric current, uses first, second, third automatic biasing to produce circuit (42,43,44), makes the V of feedbackBACKR
Voltage keeps stable in single-particle radiation environment, makes the first electric charge pump (2) and the second electric charge pump (3) to the first electric capacity C1 and the
The charging and discharging capabilities of two electric capacity C2 keeps stable, makes first, second, third automatic biasing produce the output letter of circuit (42,43,44)
Number VBNRAnd VBPRKeep stable, so that the first voltage controlled oscillator (6) input biasing keeps stable.
The automatic biasing PLL ruggedized construction of Anti-single particle radiation the most according to claim 1, it is characterised in that: described first
Voltage controlled oscillator (6) includes the first delay unit (51), the second delay unit (52), the 3rd delay unit (53), the 4th time delay
Unit (54), the 5th delay unit (55), the first amplifier (61), the second amplifier (62), the 3rd amplifier (63) and voting
Device (64), signal VOP5 and VON5 that the 5th delay unit (55) is exported by first, second, third amplifier (61,62,
63) it is amplified, exports the signal after three tunnels are amplified, then decide by vote through voting machine (64), export final PLL output signal.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106849943A (en) * | 2016-12-21 | 2017-06-13 | 西安空间无线电技术研究所 | A kind of VCO biasing circuits of alleviation SET effects |
CN113032222A (en) * | 2021-04-13 | 2021-06-25 | 浙江威固信息技术有限责任公司 | Solid state disk resistant to single event functional interruption |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1383243A1 (en) * | 2002-07-19 | 2004-01-21 | Sun Microsystems, Inc. | Locked Loop Circuit Design with Diode for Loop Filter Capacitance Leakage Current Control |
WO2004010583A1 (en) * | 2002-07-19 | 2004-01-29 | Sun Microsystems, Inc. | Loop filter capacitor leakage current control |
US20060244542A1 (en) * | 2003-05-29 | 2006-11-02 | Intel Corporation | Startup/yank circuit for self-biased phase-locked loops |
WO2008138929A1 (en) * | 2007-05-16 | 2008-11-20 | Texas Instruments Deutschland Gmbh | Ring oscillator for plls |
CN101594145A (en) * | 2008-05-26 | 2009-12-02 | 中芯国际集成电路制造(上海)有限公司 | Self-biased phase-locked loop |
CN102075183A (en) * | 2009-11-24 | 2011-05-25 | 中国科学院微电子研究所 | Fully-integrated automatic-biasing quick locking phaselocked loop frequency comprehensive device |
CN102136840A (en) * | 2011-04-22 | 2011-07-27 | 上海宏力半导体制造有限公司 | Automatic biasing phase-locked loop |
CN105634477A (en) * | 2015-12-24 | 2016-06-01 | 电子科技大学 | Self-biasing phase locked loop circuit with high phase noise performance |
CN105634475A (en) * | 2015-12-24 | 2016-06-01 | 西安电子科技大学 | Loop oscillation type phase-locked loop for charge pump |
-
2016
- 2016-06-17 CN CN201610430735.7A patent/CN106130545B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1383243A1 (en) * | 2002-07-19 | 2004-01-21 | Sun Microsystems, Inc. | Locked Loop Circuit Design with Diode for Loop Filter Capacitance Leakage Current Control |
WO2004010583A1 (en) * | 2002-07-19 | 2004-01-29 | Sun Microsystems, Inc. | Loop filter capacitor leakage current control |
US20060244542A1 (en) * | 2003-05-29 | 2006-11-02 | Intel Corporation | Startup/yank circuit for self-biased phase-locked loops |
WO2008138929A1 (en) * | 2007-05-16 | 2008-11-20 | Texas Instruments Deutschland Gmbh | Ring oscillator for plls |
CN101594145A (en) * | 2008-05-26 | 2009-12-02 | 中芯国际集成电路制造(上海)有限公司 | Self-biased phase-locked loop |
CN102075183A (en) * | 2009-11-24 | 2011-05-25 | 中国科学院微电子研究所 | Fully-integrated automatic-biasing quick locking phaselocked loop frequency comprehensive device |
CN102136840A (en) * | 2011-04-22 | 2011-07-27 | 上海宏力半导体制造有限公司 | Automatic biasing phase-locked loop |
CN105634477A (en) * | 2015-12-24 | 2016-06-01 | 电子科技大学 | Self-biasing phase locked loop circuit with high phase noise performance |
CN105634475A (en) * | 2015-12-24 | 2016-06-01 | 西安电子科技大学 | Loop oscillation type phase-locked loop for charge pump |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106849943A (en) * | 2016-12-21 | 2017-06-13 | 西安空间无线电技术研究所 | A kind of VCO biasing circuits of alleviation SET effects |
CN113032222A (en) * | 2021-04-13 | 2021-06-25 | 浙江威固信息技术有限责任公司 | Solid state disk resistant to single event functional interruption |
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