CN106130498A - FBAR resonator and preparation method thereof - Google Patents
FBAR resonator and preparation method thereof Download PDFInfo
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- CN106130498A CN106130498A CN201610490516.8A CN201610490516A CN106130498A CN 106130498 A CN106130498 A CN 106130498A CN 201610490516 A CN201610490516 A CN 201610490516A CN 106130498 A CN106130498 A CN 106130498A
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- fbar
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- photoetching
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 12
- 238000005260 corrosion Methods 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000004044 response Effects 0.000 abstract description 2
- 230000000630 rising effect Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of FBAR resonator and preparation method thereof, a kind of FBAR based on MEMS micro-processing technology, due to epitaxial monocrystalline silicon technical maturity, the silicon microstructure satisfactory mechanical property that it is formed, the cavity body structure sealing property formed especially with epitaxial monocrystalline silicon is the most excellent.The FBAR resonant frequency being consequently formed mainly is determined by thin-film body thickness, and influenced by ambient temperature, and its resonant frequency reduces with the rising of temperature, and presents obvious monotonicity, and this characteristic can be used as the Data Detection such as temperature, air pressure.In conjunction with MEMS micro-processing technology, this FBAR volume is little, low cost, and response time is short.
Description
Technical field
The present invention relates to a kind of FBAR resonator and preparation method thereof, a kind of based on MEMS micro-processing technology
FBAR and preparation method thereof, belongs to the technical field that microelectromechanical systems combines with new material.
Background technology
FBAR (FBAR) is that a kind of resonant body only has New-type radio-frequency thin-film device thick for a few um.FBAR penetrates
Frequently device has advantages such as volume is little, operating frequency is high, insertion loss is little, power capacity is big, FBAR, wave filter, double
Multiplexer has been widely used for moving communicating field.In recent years, various sensor research based on FBAR the most quietly starts.FBAR
The compact of sensor and high sensitivity, high reliability cause the widely studied interest of people.Studies have reported that and pointed out,
FBAR sensor can be used for detecting the many kinds of parameters such as micro-quality, temperature, ambient parameter, chemical gas, humidity, stress, ultraviolet.
At present, the FBAR device architecture of main flow has two kinds: a kind of is to carry out photoengraving to form the cavity of low acoustic impedance at silicon chip back side；
Another kind is to use trapezoidal Bragg reflection structure.Two kinds of structures have bigger defect.For back-etching type, at device
Can only be from the beginning of front during part cutting, device is easily broken, and owing to large-area silicon substrate is removed, certainly will have impact on device
Mechanical fastness, and yield rate is greatly reduced.This type FBAR is not easily accomplished due to mechanical fastness problem inherently
Commercialization, also has a lot of research contents needing and improving at present.Comparatively speaking, the second uses trapezoidal Bragg reflection structure
FBAR device machinery fastness is strong, integration good, and need not by MEMS technology, and this makes many not possess the half of MEMS technology
Conductor manufacturer industry can also be conveniently added with into.But its shortcoming is to need to prepare plural layers, and process costs is than air-gap type
FBAR want height, and the acoustic reflection effect of Bragg reflecting layer is eventually come well not as good as air.So how realize reliability high,
Low cost, processing technique is simple, and of the range of application FBAR the most widely design that becomes FBAR device is important asks
Topic.
Summary of the invention
Purpose: for solving the deficiencies in the prior art, it is provided that the FBAR resonator of a kind of based single crystal silicon epitaxy envelope chamber technique
And preparation method thereof, Stability Analysis of Structures, low cost, processing technique is simple, and range of application is the most extensive.Basic skills uses exactly
MEMS technology, forms cavity in silicon chip by monocrystal silicon extension envelope chamber technique, and realizes the function of FBAR device.
Technical scheme: for solving above-mentioned technical problem, the technical solution used in the present invention is:
A kind of preparation method of FBAR resonator, it is characterised in that: comprise the following steps:
Step 1), choose monocrystalline substrate, use anisotropic rie (RIE) technique to etch on a monocrystaline silicon substrate
The degree of depth is the shallow slot of 5-10 μm；
Step 2), while monocrystalline substrate shallow slot sidewall is protected, monocrystalline substrate is carried out isotropic etch,
Prepare for ensuing epitaxial monocrystalline silicon envelope chamber technique；
Step 3), epitaxial monocrystalline silicon envelope chamber: epitaxial growth monocrystal silicon, make monocrystalline substrate be internally formed the cavity of sealing；
Step 4), on a monocrystaline silicon substrate surface grow silicon dioxide and silicon nitride, and photoetching, corrosion formation contact hole successively；
Step 5), sputtering first layer metal in silicon nitride surface, photoetching, corrosion form pad, line and FBAR under electricity are electrically interconnected
Pole；
Step 6), on silicon nitride and first layer metal Sputtered piezoelectric material, photoetching, corrosion formed FBAR piezoelectric structure；
Step 7), on silicon nitride and piezoelectric sputter second layer metal, photoetching, corrosion formed pad, be electrically interconnected line and
The upper electrode of FBAR.
Preferably, the preparation method of described FBAR resonator, it is characterised in that: described piezoelectric is nitridation
Aluminum.
Preferably, the preparation method of described FBAR resonator, it is characterised in that: described housing depth is 4-6 μ
m.More preferably 5 μm.
A kind of FBAR resonator that the present invention provides, uses the preparation method of above-mentioned FBAR resonator to be prepared from.
Beneficial effect: FBAR resonator that the present invention provides and preparation method thereof, sets up at the monocrystal silicon cavity knot sealed
On structure, device architecture is simple, and this sealing cavity body structure is formed by monocrystal silicon epitaxial growth technology.With respect to bonding
Or the FBAR structure that surface sacrificial process is formed, sets up and has manufacture in monocrystal silicon extension envelope chamber technologic FBAR structure
Technique is simple, device satisfactory mechanical property, stability high.And utilize front sputtering and etching technics just can complete
The processing of FBAR device, processing step is simple and reliable.The whole course of processing does not interferes with the existing cmos circuit of front side of silicon wafer, institute
Post-CMOS processing technique can be used to be processed with FBAR resonator, thus further realize the monolithic intelligence of chip
Change, it is also possible to reduce size and the cost of chip.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet that the present invention makes；
In figure: monocrystalline substrate 1, silicon dioxide 2, silicon nitride 3, first layer metal 4, piezoelectric 5, second layer metal 6, chamber
Body 7.
Detailed description of the invention
Below in conjunction with example, the present invention is illustrated:
Embodiment 1:
As it is shown in figure 1, the FBAR resonator that the present invention provides is prepared by following steps:
A () uses N-type (100) monocrystal silicon as substrate, served as a contrast at monocrystal silicon by anisotropic rie (RIE) technique
Shallow slot is etched at the end 1；
B (), while protecting monocrystalline substrate 1 shallow slot sidewall, carries out isotropic etch to monocrystalline substrate, for
Ensuing epitaxial monocrystalline silicon envelope chamber technique is prepared；
C () epitaxial growth monocrystal silicon, has been internally formed the cavity 7 sealed, high about 5 μm of cavity 7 in monocrystalline substrate；
D () grows silicon dioxide 2 and silicon nitride 3, and photoetching, corrosion formation contact hole successively at monocrystalline substrate 1 upper surface；
E () sputters first layer metal 4 on silicon nitride 3 surface, photoetching, corrosion form pad, line and FBAR bottom electrode are electrically interconnected；
F () be Sputtered piezoelectric material 5(such as aluminium nitride on silicon nitride 3 and first layer metal 4), photoetching, corrosion form FBAR piezoelectricity
Material structure；
G () sputters second layer metal 6 on silicon nitride 3 and piezoelectric 5, photoetching, corrosion formed pad, be electrically interconnected line and
The upper electrode of FBAR.
FBAR resonator that the present invention provides and preparation method thereof, sets up on the monocrystal silicon cavity body structure sealed, device
Part simple in construction, and this sealing cavity body structure formed by monocrystal silicon epitaxial growth technology.Specifically one adds based on MEMS is micro-
The FBAR of work technology, due to epitaxial monocrystalline silicon technical maturity, the silicon microstructure satisfactory mechanical property that it is formed, especially with outward
Prolong the cavity body structure sealing property that monocrystal silicon formed the most excellent.The FBAR resonant frequency being consequently formed is mainly thick by thin-film body
Degree determines, and influenced by ambient temperature, and its resonant frequency reduces with the rising of temperature, and presents obvious monotonicity, should
Characteristic can be used as the Data Detection such as temperature, air pressure.In conjunction with MEMS micro-processing technology, this FBAR volume is little, low cost, response time
Short.The FBAR structure formed with respect to bonding or surface sacrificial process, sets up in the technique of monocrystal silicon extension envelope chamber
FBAR structure to have manufacturing process simple, device satisfactory mechanical property, stability high.And utilize front sputtering and
Etching technics just can complete the processing of FBAR device, and processing step is simple and reliable.The whole course of processing is not just interfering with silicon chip
The existing cmos circuit in face, so FBAR resonator can use post-CMOS processing technique to be processed, thus further
The monolithic realizing chip intelligent, it is also possible to reduce size and the cost of chip.
Below disclosing the present invention with preferred embodiment, so it is not intended to limiting the invention, all employing equivalents
Or the technical scheme that equivalent transformation mode is obtained, within all falling within protection scope of the present invention.
Claims (4)
1. the preparation method of a FBAR resonator, it is characterised in that: comprise the following steps:
Step 1), choose monocrystalline substrate, use anisotropic rie technique etching depth on a monocrystaline silicon substrate
Shallow slot for 5-10 μm；
Step 2), while monocrystalline substrate shallow slot sidewall is protected, monocrystalline substrate is carried out isotropic etch,
Prepare for ensuing epitaxial monocrystalline silicon envelope chamber technique；
Step 3), epitaxial monocrystalline silicon envelope chamber: epitaxial growth monocrystal silicon, make monocrystalline substrate be internally formed the cavity of sealing；
Step 4), on a monocrystaline silicon substrate surface grow silicon dioxide and silicon nitride, and photoetching, corrosion formation contact hole successively；
Step 5), sputtering first layer metal in silicon nitride surface, photoetching, corrosion form pad, line and FBAR under electricity are electrically interconnected
Pole；
Step 6), on silicon nitride and first layer metal Sputtered piezoelectric material, photoetching, corrosion formed FBAR piezoelectric structure；
Step 7), on silicon nitride and piezoelectric sputter second layer metal, photoetching, corrosion formed pad, be electrically interconnected line and
The upper electrode of FBAR.
The preparation method of FBAR resonator the most according to claim 1, it is characterised in that: described piezoelectric is nitridation
Aluminum.
The preparation method of FBAR resonator the most according to claim 1, it is characterised in that: described housing depth is 4-6 μm.
4. a FBAR resonator, uses the preparation method of the FBAR resonator described in any one of claim 1-3 to be prepared from.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610490516.8A CN106130498A (en) | 2016-06-28 | 2016-06-28 | FBAR resonator and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610490516.8A CN106130498A (en) | 2016-06-28 | 2016-06-28 | FBAR resonator and preparation method thereof |
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| CN106130498A true CN106130498A (en) | 2016-11-16 |
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| CN201610490516.8A Pending CN106130498A (en) | 2016-06-28 | 2016-06-28 | FBAR resonator and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106744651A (en) * | 2017-01-11 | 2017-05-31 | 河海大学常州校区 | A kind of condenser type microelectronics baroceptor and preparation method thereof |
| CN109756203A (en) * | 2018-11-28 | 2019-05-14 | 河源市众拓光电科技有限公司 | A kind of FBAR resonance frequency and each thickness degree corresponding relationship method for building up of oscillating membrane |
| CN110006490A (en) * | 2019-04-19 | 2019-07-12 | 河海大学常州校区 | A kind of temperature, pressure integrated sensor and preparation method thereof |
| CN110311641A (en) * | 2019-06-27 | 2019-10-08 | 河海大学常州校区 | A kind of pressure, temperature integrated sensor and preparation method thereof |
| CN111355460A (en) * | 2018-12-20 | 2020-06-30 | 中国电子科技集团公司第十三研究所 | Method for manufacturing resonator |
| CN111628748A (en) * | 2019-02-28 | 2020-09-04 | 无锡华润上华科技有限公司 | Surface acoustic wave device and method for manufacturing the same |
| CN111721365A (en) * | 2020-07-15 | 2020-09-29 | 河海大学常州校区 | Resonant SAW temperature and pressure integrated sensor and preparation method thereof |
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| CN103011057A (en) * | 2012-12-03 | 2013-04-03 | 东南大学 | Preparation method of capacitive barometric sensor of micro-electronic-mechanical system |
| CN104767500A (en) * | 2014-01-03 | 2015-07-08 | 李国强 | Cavity film bulk acoustic resonator and preparation method thereof |
| CN105680813A (en) * | 2016-02-25 | 2016-06-15 | 锐迪科微电子（上海）有限公司 | Thin-film bulk acoustic resonator and manufacturing method thereof |
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| CN100466469C (en) * | 2002-07-30 | 2009-03-04 | 安华高科技无线Ip（新加坡）私人有限公司 | Improved resonator with inoculation layer |
| US7479685B2 (en) * | 2006-03-10 | 2009-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic device on substrate with cavity and mitigated parasitic leakage path |
| CN103011057A (en) * | 2012-12-03 | 2013-04-03 | 东南大学 | Preparation method of capacitive barometric sensor of micro-electronic-mechanical system |
| CN104767500A (en) * | 2014-01-03 | 2015-07-08 | 李国强 | Cavity film bulk acoustic resonator and preparation method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106744651A (en) * | 2017-01-11 | 2017-05-31 | 河海大学常州校区 | A kind of condenser type microelectronics baroceptor and preparation method thereof |
| CN109756203A (en) * | 2018-11-28 | 2019-05-14 | 河源市众拓光电科技有限公司 | A kind of FBAR resonance frequency and each thickness degree corresponding relationship method for building up of oscillating membrane |
| CN111355460A (en) * | 2018-12-20 | 2020-06-30 | 中国电子科技集团公司第十三研究所 | Method for manufacturing resonator |
| US11984864B2 (en) | 2018-12-20 | 2024-05-14 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Method for manufacturing resonator |
| CN111628748A (en) * | 2019-02-28 | 2020-09-04 | 无锡华润上华科技有限公司 | Surface acoustic wave device and method for manufacturing the same |
| CN111628748B (en) * | 2019-02-28 | 2022-10-14 | 无锡华润上华科技有限公司 | Surface acoustic wave device and method for manufacturing the same |
| CN110006490A (en) * | 2019-04-19 | 2019-07-12 | 河海大学常州校区 | A kind of temperature, pressure integrated sensor and preparation method thereof |
| CN110311641A (en) * | 2019-06-27 | 2019-10-08 | 河海大学常州校区 | A kind of pressure, temperature integrated sensor and preparation method thereof |
| CN110311641B (en) * | 2019-06-27 | 2023-01-31 | 河海大学常州校区 | Pressure and temperature integrated sensor and preparation method thereof |
| CN111721365A (en) * | 2020-07-15 | 2020-09-29 | 河海大学常州校区 | Resonant SAW temperature and pressure integrated sensor and preparation method thereof |
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Application publication date: 20161116 |