CN106130320A - Supper-fast MOSFET electrical switch drive circuit - Google Patents
Supper-fast MOSFET electrical switch drive circuit Download PDFInfo
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- CN106130320A CN106130320A CN201610763957.0A CN201610763957A CN106130320A CN 106130320 A CN106130320 A CN 106130320A CN 201610763957 A CN201610763957 A CN 201610763957A CN 106130320 A CN106130320 A CN 106130320A
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- electrical switch
- mos pipe
- power
- secondary coil
- drive circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The present invention discloses a kind of supper-fast MOSFET electrical switch drive circuit, including: square-wave generator, push-pull circuit, high-voltage MOS pipe, acceleration NE, coupling transformer and at least 2 driving branch roads, this drives driving small-signal unit, power tube unit and a main circuit that route is sequentially connected in series to take can unit composition；Described coupling transformer primary side and primary side are respectively provided with a primary coil and at least 4 secondary coils, and these at least 4 secondary coils are further divided at least 2 VTpSecondary coil and at least 2 VTnSecondary coil, described acceleration NE is connected in series in the primary coil of coupling transformer, the V of coupling transformerTpSecondary coil and VTnSecondary coil is all connected on the corresponding driving small-signal unit driving branch road.The present invention, without extra power supply, had both greatly reduced electrical switch drive circuit volume, accelerated again electrical switch rising front, and electrical switch drive circuit power demand significantly reduces, and is especially suitable for array MOSFET electrical switch.
Description
Technical field
The invention belongs to power electronic devices applied technical field, particularly relate to a kind of supper-fast MOSFET electrical switch and drive
Galvanic electricity road.
Background technology
Drive circuit is the interface circuit between power device and numerical control system, and its performance has weight to main circuit parameter
Affect.Such as, the rising edge of MOSFET power device is had a major impact by drive circuit.Existing electrical switch drive circuit
Rising front is relatively slow, and needs extra high power switching power supply.Above-mentioned technical problem how is overcome to become art technology
The direction that personnel make great efforts.
Summary of the invention
It is an object of the present invention to provide a kind of supper-fast MOSFET electrical switch drive circuit, this supper-fast MOSFET electronic cutting
Pass drive circuit, without extra power supply, had both greatly reduced electrical switch drive circuit volume, had accelerated again electrical switch
Rising front, electrical switch drive circuit power demand significantly reduces, and is especially suitable for array MOSFET electrical switch.
For reaching above-mentioned purpose, the technical solution used in the present invention is: a kind of supper-fast MOSFET electrical switch drives electricity
Road, including: square-wave generator, push-pull circuit, high-voltage MOS pipe, acceleration NE, coupling transformer and at least 2 drive and prop up
Road, this drives driving small-signal unit, power tube unit and a main circuit that route is sequentially connected in series to take can unit composition；
Described square-wave generator is connected with the input of push-pull circuit, and the grid of described high-voltage MOS pipe is connected to push-pull circuit
Outfan, the source electrode of described high-voltage MOS pipe and drain electrode are ground connection and accelerate between NE, described acceleration NE with
The primary coil of coupling transformer connects, and described acceleration NE is by R in parallelvResistance and CvElectric capacity composes in parallel；
Described coupling transformer primary side and primary side are respectively provided with a primary coil and at least 4 secondary coils, and these are at least 4 years old
Individual secondary coil is further divided at least 2 VTpSecondary coil and at least 2 VTnSecondary coil, described acceleration NE with
The primary coil of coupling transformer is connected in series in, the V of coupling transformerTpSecondary coil and VTnSecondary coil is all connected to correspondence
Drive on the driving small-signal unit of branch road；
Described driving small-signal unit farther include filtration module, metal-oxide-semiconductor and between filtration module, metal-oxide-semiconductor first
Diode, this filtration module is connected with VTn secondary coil, and the grid of this metal-oxide-semiconductor and source electrode are electric with the height of VTp secondary coil respectively
Position outfan and electronegative potential outfan connect,
Described main circuit take can unit farther include store electric capacity, the second diode and 2 series connection current-limiting resistances, described in deposit
Storage electric capacity is connected with the drain electrode of the metal-oxide-semiconductor driving small-signal unit, and described second diode is positioned at the current-limiting resistance of 2 series connection
Between the contact of contact and metal-oxide-semiconductor and storage electric capacity, the source electrode of the metal-oxide-semiconductor of small-signal unit is driven to be connected in power tube unit
The grid of power tube.
In technique scheme, further improvement project is as follows:
1., in such scheme, the power tube in described power tube unit is by the first power MOS pipe and the second power MOS tube parallel
Composition.
2., in such scheme, described push-pull circuit includes the first power MOS pipe, the second power MOS pipe and the 3rd power
Metal-oxide-semiconductor, the second power MOS pipe and the 3rd power MOS tube parallel, the first power MOS pipe and the second power MOS pipe and the 3rd power
Metal-oxide-semiconductor is connected.
3. in such scheme, described driving number of branches is four, and these four drive branch circuit parallel connection to connect.
Owing to technique scheme is used, the present invention compared with prior art has the advantage that
The present invention supper-fast MOSFET electrical switch drive circuit, its MOSFET electrical switch rising front can accelerate to 3ns, expands
Wide range of application, and use that take from coupling transformer and main circuit can dipulse injecting power before and after unit, it is not necessary to extra
Power supply, had both greatly reduced electrical switch drive circuit volume, had accelerated again electrical switch rising front, and electrical switch drives
Galvanic electricity road power demand significantly reduces, and is especially suitable for array MOSFET electrical switch.
Accompanying drawing explanation
Accompanying drawing 1 is the logical transition electrical block diagram of MOSFET electrical switch drive circuit of the present invention；
Accompanying drawing 2 is that in electrical switch drive circuit of the present invention, secondary accelerates and power circuit structural representation.
In the figures above: 1, square-wave generator；2, push-pull circuit；3, high-voltage MOS pipe；4, NE is accelerated；5, coupling
Transformator；6, branch road is driven；7, small-signal unit is driven；71, filtration module；72, metal-oxide-semiconductor；73, the first diode；8, power
Pipe unit；81, power tube；9, main circuit takes energy unit；91, storage electric capacity；92, the second diode；93, current-limiting resistance.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment the invention will be further described:
Embodiment 1: a kind of supper-fast MOSFET electrical switch drive circuit, including: square-wave generator 1, push-pull circuit 2, high pressure
Metal-oxide-semiconductor 3, acceleration NE 4, coupling transformer 5 and at least 2 driving branch roads 6, this drives branch road 6 by driving of being sequentially connected in series
Dynamic small-signal unit 7, power tube unit 8 and main circuit take and can form by unit 9；
Described square-wave generator 1 is connected with the input of push-pull circuit 2, and the grid of described high-voltage MOS pipe 3 is connected to push-pull circuit
The outfan of 2, source electrode and the drain electrode of described high-voltage MOS pipe 3 ground connection and are accelerated between NE 4, described acceleration network
Unit 4 is connected with the primary coil of coupling transformer 5, and described acceleration NE 4 is by R in parallelvResistance and CvElectric capacity joint group
Become；
Described coupling transformer 4 primary side and primary side are respectively provided with a primary coil and at least 4 secondary coils, and this is at least
4 secondary coils are further divided at least 2 VTpSecondary coil and at least 2 VTnSecondary coil, described acceleration NE 4
It is connected in series in the primary coil of coupling transformer 5, the V of coupling transformer 4TpSecondary coil and VTnSecondary coil is all connected to
On the corresponding driving small-signal unit 7 driving branch road 6；
Described driving small-signal unit 7 farther include filtration module 71, metal-oxide-semiconductor 72 and be positioned at filtration module 71, metal-oxide-semiconductor 72 it
Between the first diode 73, this filtration module 71 is connected with VTn secondary coil, the grid of this metal-oxide-semiconductor 72 and source electrode respectively with VTp
The high-potential output end of secondary coil and electronegative potential outfan connect,
Described main circuit takes and can farther include to store electric capacity the 91, second diode 92 and the current-limiting resistance of 2 series connection by unit 9
93, described storage electric capacity 91 is connected with the drain electrode of the metal-oxide-semiconductor 72 driving small-signal unit 7, and described second diode 92 is positioned at 2
Between the contact of the contact of the current-limiting resistance 93 of series connection and metal-oxide-semiconductor 72 and storage electric capacity, drive the metal-oxide-semiconductor of small-signal unit 5
Source electrode is connected to the grid of power tube 81 in power tube unit 8.
Power tube 81 in above-mentioned power tube unit 8 is made up of the first power MOS pipe and the second power MOS tube parallel.
Logical transition circuit is as shown in Figure 1.Wherein, RvAnd CvAccelerating for pulse front edge, secondary accelerating circuit is opened with array
Close power device as shown in Figure 2.Wherein, Q11、Q12、Q21And Q22For power tube, Ck1And Ck2It is respectively drive circuit storage capacitor
Device, Dz1And Dz2Gate protection Zener diode respectively.Utilize flying capacitor CkThere is provided for drive circuit and drive power.This electricity
Road is possible not only to reduce the power demand of electrical switch drive circuit, and before may also speed up the rising of gate drive signal
Edge.
First, utilize main circuit voltage to discharge capacity Ck1And Ck2Charging；Then, trigger S simultaneously1、Q11And Q12By electric capacity
Device stored voltage is applied directly to two ends, grid source, uses dipulse before and after taking energy unit from coupling transformer and main circuit to inject
Power, it is not necessary to extra power supply, had both greatly reduced electrical switch drive circuit volume, before accelerating again electrical switch rising
Edge, electrical switch drive circuit power demand significantly reduces, and is especially suitable for array MOSFET electrical switch.
Embodiment 2: a kind of supper-fast MOSFET electrical switch drive circuit, including: square-wave generator 1, push-pull circuit 2,
High-voltage MOS pipe 3, acceleration NE 4, coupling transformer 5 and at least 2 driving branch roads 6, this drives branch road 6 by being sequentially connected in series
Driving small-signal unit 7, power tube unit 8 and main circuit take can unit 9 form；
Described square-wave generator 1 is connected with the input of push-pull circuit 2, and the grid of described high-voltage MOS pipe 3 is connected to push-pull circuit
The outfan of 2, source electrode and the drain electrode of described high-voltage MOS pipe 3 ground connection and are accelerated between NE 4, described acceleration network
Unit 4 is connected with the primary coil of coupling transformer 5, and described acceleration NE 4 is by R in parallelvResistance and CvElectric capacity joint group
Become；
Described coupling transformer 4 primary side and primary side are respectively provided with a primary coil and at least 4 secondary coils, and this is at least
4 secondary coils are further divided at least 2 VTpSecondary coil and at least 2 VTnSecondary coil, described acceleration NE 4
It is connected in series in the primary coil of coupling transformer 5, the V of coupling transformer 4TpSecondary coil and VTnSecondary coil is all connected to
On the corresponding driving small-signal unit 7 driving branch road 6；
Described driving small-signal unit 7 farther include filtration module 71, metal-oxide-semiconductor 72 and be positioned at filtration module 71, metal-oxide-semiconductor 72 it
Between the first diode 73, this filtration module 71 is connected with VTn secondary coil, the grid of this metal-oxide-semiconductor 72 and source electrode respectively with VTp
The high-potential output end of secondary coil and electronegative potential outfan connect,
Described main circuit takes and can farther include to store electric capacity the 91, second diode 92 and the current-limiting resistance of 2 series connection by unit 9
93, described storage electric capacity 91 is connected with the drain electrode of the metal-oxide-semiconductor 72 driving small-signal unit 7, and described second diode 92 is positioned at 2
Between the contact of the contact of the current-limiting resistance 93 of series connection and metal-oxide-semiconductor 72 and storage electric capacity, drive the metal-oxide-semiconductor of small-signal unit 5
Source electrode is connected to the grid of power tube 81 in power tube unit 8.
Above-mentioned push-pull circuit 2 includes the first power MOS pipe the 21, second power MOS pipe 22 and the 3rd power MOS pipe 23, the
Two power MOS pipes 22 are in parallel with the 3rd power MOS pipe 23, the first power MOS pipe 21 and the second power MOS pipe 22 and the 3rd power
Metal-oxide-semiconductor 23 is connected.
Above-mentioned driving branch road 6 number is four, and these four driving branch roads 6 are connected in parallel.
When using above-mentioned supper-fast MOSFET electrical switch drive circuit, its MOSFET electrical switch rising front can accelerate
To 3ns, widen range of application；Use dipulse injecting power before and after taking energy unit from coupling transformer and main circuit, nothing
Need extra power supply, both greatly reduced electrical switch drive circuit volume, and accelerated again electrical switch rising front, electronics
Switch driving circuit power demand significantly reduces, and is especially suitable for array MOSFET electrical switch.
Above-described embodiment, only for technology design and the feature of the explanation present invention, its object is to allow person skilled in the art
Scholar will appreciate that present disclosure and implements according to this, can not limit the scope of the invention with this.All according to the present invention
The equivalence that spirit is made changes or modifies, and all should contain within protection scope of the present invention.
Claims (4)
1. a supper-fast MOSFET electrical switch drive circuit, it is characterised in that: including: square-wave generator (1), push-pull circuit
(2), high-voltage MOS pipe (3), accelerating NE (4), coupling transformer (5) and at least 2 driving branch roads (6), this drives branch road
(6) taken can be formed by unit (9) by driving small-signal unit (7) being sequentially connected in series, power tube unit (8) and main circuit；
Described square-wave generator (1) is connected with the input of push-pull circuit (2), and the grid of described high-voltage MOS pipe (3) is connected to push away
Drawing the outfan of circuit (2), the source electrode of described high-voltage MOS pipe (3) and drain electrode are positioned at ground connection and accelerate between NE (4),
Described acceleration NE (4) is connected with the primary coil of coupling transformer (5), and described acceleration NE (4) is by parallel connection
RvResistance and CvElectric capacity composes in parallel；
Described coupling transformer (4) primary side and primary side are respectively provided with a primary coil and at least 4 secondary coils, and this is extremely
Few 4 secondary coils are further divided at least 2 VTpSecondary coil and at least 2 VTnSecondary coil, described acceleration NE
(4) primary coil with coupling transformer (5) is connected in series in, the V of coupling transformer (4)TpSecondary coil and VTnSecondary coil is equal
It is connected in corresponding driving small-signal unit (7) driving branch road (6)；
Described driving small-signal unit (7) farther include filtration module (71), metal-oxide-semiconductor (72) and be positioned at filtration module (71),
The first diode (73) between metal-oxide-semiconductor (72), this filtration module (71) is connected with VTn secondary coil, the grid of this metal-oxide-semiconductor (72)
Pole and source electrode are connected with high-potential output end and the electronegative potential outfan of VTp secondary coil respectively,
Described main circuit takes and can farther include to store electric capacity (91), the second diode (92) and the current limliting of 2 series connection by unit (9)
Resistance (93), described storage electric capacity (91) is connected with the drain electrode of the metal-oxide-semiconductor (72) driving small-signal unit (7), and the described 2nd 2
Pole pipe (92) is positioned between the contact of the current-limiting resistance (93) of 2 series connection and the contact of metal-oxide-semiconductor (72) and storage electric capacity, drives little
The source electrode of the metal-oxide-semiconductor of signal element (5) is connected to the grid of power tube (81) in power tube unit (8).
Supper-fast MOSFET electrical switch drive circuit the most according to claim 1, it is characterised in that: described power tube list
Power tube (81) in unit (8) is made up of the first power MOS pipe and the second power MOS tube parallel.
Supper-fast MOSFET electrical switch drive circuit the most according to claim 1, it is characterised in that: described push-pull circuit
(2) the first power MOS pipe (21), the second power MOS pipe (22) and the 3rd power MOS pipe (23), the second power MOS pipe are included
(22) in parallel with the 3rd power MOS pipe (23), the first power MOS pipe (21) and the second power MOS pipe (22) and the 3rd power MOS
Pipe (23) series connection.
Supper-fast MOSFET electrical switch drive circuit the most according to claim 1, it is characterised in that: described driving branch road
(6) number is four, and these four driving branch roads (6) are connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610763957.0A CN106130320B (en) | 2016-08-30 | 2016-08-30 | Supper-fast MOSFET electronic switch driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610763957.0A CN106130320B (en) | 2016-08-30 | 2016-08-30 | Supper-fast MOSFET electronic switch driving circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106130320A true CN106130320A (en) | 2016-11-16 |
| CN106130320B CN106130320B (en) | 2019-06-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610763957.0A Active CN106130320B (en) | 2016-08-30 | 2016-08-30 | Supper-fast MOSFET electronic switch driving circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2706110C1 (en) * | 2018-08-31 | 2019-11-14 | Владимир Яковлевич Завьялов | Power supply device for electric appliances |
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|---|---|---|---|---|
| CN102594101A (en) * | 2012-02-16 | 2012-07-18 | 江苏大学 | Isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit |
| CN103138541A (en) * | 2012-11-29 | 2013-06-05 | 深圳市航嘉驰源电气股份有限公司 | Drive transformer isolation self-adaptation drive circuit |
| WO2014094115A1 (en) * | 2012-12-21 | 2014-06-26 | Gan Systems Inc. | Devices and systems comprising drivers for power conversion circuits |
| CN203933358U (en) * | 2014-05-17 | 2014-11-05 | 徐云鹏 | A kind of field effect transistor drive circuit for high frequency low voltage system |
| CN105897235A (en) * | 2016-05-03 | 2016-08-24 | 苏州泰思特电子科技有限公司 | SCR electronic switch for achieving synchronization of drive signals |
| CN206023569U (en) * | 2016-08-30 | 2017-03-15 | 苏州泰思特电子科技有限公司 | Supper-fast MOSFET electronic switches drive circuit |
-
2016
- 2016-08-30 CN CN201610763957.0A patent/CN106130320B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102594101A (en) * | 2012-02-16 | 2012-07-18 | 江苏大学 | Isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit |
| CN103138541A (en) * | 2012-11-29 | 2013-06-05 | 深圳市航嘉驰源电气股份有限公司 | Drive transformer isolation self-adaptation drive circuit |
| WO2014094115A1 (en) * | 2012-12-21 | 2014-06-26 | Gan Systems Inc. | Devices and systems comprising drivers for power conversion circuits |
| CN203933358U (en) * | 2014-05-17 | 2014-11-05 | 徐云鹏 | A kind of field effect transistor drive circuit for high frequency low voltage system |
| CN105897235A (en) * | 2016-05-03 | 2016-08-24 | 苏州泰思特电子科技有限公司 | SCR electronic switch for achieving synchronization of drive signals |
| CN206023569U (en) * | 2016-08-30 | 2017-03-15 | 苏州泰思特电子科技有限公司 | Supper-fast MOSFET electronic switches drive circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2706110C1 (en) * | 2018-08-31 | 2019-11-14 | Владимир Яковлевич Завьялов | Power supply device for electric appliances |
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| Publication number | Publication date |
|---|---|
| CN106130320B (en) | 2019-06-14 |
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