CN106129128A - A kind of phototriode - Google Patents
A kind of phototriode Download PDFInfo
- Publication number
- CN106129128A CN106129128A CN201610677155.8A CN201610677155A CN106129128A CN 106129128 A CN106129128 A CN 106129128A CN 201610677155 A CN201610677155 A CN 201610677155A CN 106129128 A CN106129128 A CN 106129128A
- Authority
- CN
- China
- Prior art keywords
- base
- collecting zone
- launch site
- pin
- tube core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000004576 sand Substances 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention provides a kind of phototriode, including shell, set tube core in the enclosure, be connected in the pin below tube core, be located at the glass convex lens of cover top portion, described tube core includes launch site and the collecting zone at two ends, is located at base, the emitter stage being connected on launch site, the colelctor electrode being connected on collecting zone, the base stage being connected on base, the emitter junction being located between launch site and base and the collector junction being located between collecting zone and base in the middle of launch site and collecting zone, and described pin is provided with locating piece.The phototriode of the present invention has the following technical effect that 1) pin is not easy to be bent over or fracture；2) pin was not easily pluggable into when inlaying deeply, was not result in welding built on the sand.
Description
Technical field
The present invention relates to a kind of phototriode, belong to technical field of semiconductors.
Background technology
Audion, full name should be transistor, also referred to as bipolar transistor, crystal triode, is a kind of control electricity
Its effect of semiconductor device of stream is that small-signal is zoomed into the signal of telecommunication that range value is bigger, also serves as noncontacting switch.Brilliant
Body audion, is one of basic components and parts of quasiconductor, has Current amplifier effect, is the core parts of electronic circuit.Audion
Being the PN junction making two close proximity on a block semiconductor substrate, two PN junctions are divided into three parts bulk semiconductor, in
Between part be base, two side portions is launch site and collecting zone, and arrangement mode has PNP and NPN two kinds.
There is following weak point in existing audion:
1) pin is easily bent over or fractures；
2) pin easily inserted when inlaying deeply, caused welding built on the sand.
These weak points have all had a strong impact on the service life of audion.
Summary of the invention
In place of it is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of phototriode.
The phototriode of the present invention, including shell, sets tube core in the enclosure, is connected in the pin below tube core, is located at
The glass convex lens of cover top portion, described tube core includes launch site and the collecting zone at two ends, is located in the middle of launch site and collecting zone
Base, the emitter stage being connected on launch site, the colelctor electrode being connected on collecting zone, the base stage being connected on base, be located at launch site
And emitter junction between base and the collector junction being located between collecting zone and base, described pin is provided with locating piece.
Described pin is formed by the compacting of In grain with thin copper conductor.
The phototriode of the present invention has the following technical effect that
1) pin is not easy to be bent over or fracture；
2) pin was not easily pluggable into when inlaying deeply, was not result in welding built on the sand.
Detailed description of the invention
The phototriode of the present invention, including shell, sets tube core in the enclosure, is connected in the pin below tube core, is located at
The glass convex lens of cover top portion, described tube core includes launch site and the collecting zone at two ends, is located in the middle of launch site and collecting zone
Base, the emitter stage being connected on launch site, the colelctor electrode being connected on collecting zone, the base stage being connected on base, be located at launch site
And emitter junction between base and the collector junction being located between collecting zone and base, described pin is provided with locating piece.
Described pin is formed by the compacting of In grain with thin copper conductor.
Claims (2)
1. a phototriode, it is characterised in that include shell, set tube core in the enclosure, be connected in the pin below tube core,
Being located at the glass convex lens of cover top portion, described tube core includes launch site and the collecting zone at two ends, is located at launch site and collecting zone
Middle base, the emitter stage being connected on launch site, the colelctor electrode being connected on collecting zone, the base stage being connected on base, it is located at and sends out
Penetrating the emitter junction between district and base and the collector junction being located between collecting zone and base, described pin is provided with locating piece.
Phototriode the most according to claim 1, it is characterised in that described pin is suppressed by In grain with thin copper conductor
Form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610677155.8A CN106129128A (en) | 2016-08-17 | 2016-08-17 | A kind of phototriode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610677155.8A CN106129128A (en) | 2016-08-17 | 2016-08-17 | A kind of phototriode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106129128A true CN106129128A (en) | 2016-11-16 |
Family
ID=57279855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610677155.8A Pending CN106129128A (en) | 2016-08-17 | 2016-08-17 | A kind of phototriode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106129128A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219373A (en) * | 2013-03-27 | 2013-07-24 | 林伟良 | Semiconductor triode with mounting plate |
| US20130206222A1 (en) * | 2012-02-13 | 2013-08-15 | Jungmin Ha | Solar cell |
| CN105655412A (en) * | 2016-03-30 | 2016-06-08 | 南通明芯微电子有限公司 | Schottky diode |
-
2016
- 2016-08-17 CN CN201610677155.8A patent/CN106129128A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130206222A1 (en) * | 2012-02-13 | 2013-08-15 | Jungmin Ha | Solar cell |
| CN103219373A (en) * | 2013-03-27 | 2013-07-24 | 林伟良 | Semiconductor triode with mounting plate |
| CN105655412A (en) * | 2016-03-30 | 2016-06-08 | 南通明芯微电子有限公司 | Schottky diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106357226B (en) | Power amplifier module | |
| US9263440B2 (en) | Power transistor arrangement and package having the same | |
| TW200715550A (en) | Semiconductor device and method of manufacturing such a device | |
| CN106341090B (en) | A kind of power amplification circuit | |
| US8981999B2 (en) | Broadband antenna element | |
| CN102769284B (en) | Small-size electrostatic discharge protection circuit in radio frequency power amplifier | |
| CN106129128A (en) | A kind of phototriode | |
| CN102842898B (en) | Electrostatic discharge protection circuit | |
| CN204142883U (en) | Electric-leakage detection circuit and detection of electrical leakage frock | |
| CN106299119A (en) | A kind of organic triode | |
| CN207474464U (en) | A kind of transistor of fast quick-detach | |
| CN208889642U (en) | A kind of triode of good heat dissipation effect | |
| CN108258036A (en) | A kind of patch triode | |
| CN107203241A (en) | A kind of bias current generating circuit | |
| CN209266402U (en) | A kind of protection type patch triode | |
| CN207134359U (en) | A kind of triode | |
| CN204680666U (en) | Triode pin fender bracket | |
| CN207283785U (en) | A kind of pulsewidth modulation 350W+65W power amplifier modules | |
| CN204497232U (en) | ESD safeguard structure in PCB circuit | |
| CN206474852U (en) | A kind of triode | |
| CN204927299U (en) | Face contact type rectifier diode | |
| CN204795566U (en) | Stereo set circuit | |
| CN209328905U (en) | A kind of modified form patch type triode | |
| CN203933585U (en) | A kind of simple and easy solid-state relay circuit | |
| CN202798629U (en) | Bi-CMOS (complementary metal oxide semiconductor) switching circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161116 |