CN106128496A - A kind of disposal programmable device based on capacitor mechanism and programming realization method - Google Patents
A kind of disposal programmable device based on capacitor mechanism and programming realization method Download PDFInfo
- Publication number
- CN106128496A CN106128496A CN201610429749.7A CN201610429749A CN106128496A CN 106128496 A CN106128496 A CN 106128496A CN 201610429749 A CN201610429749 A CN 201610429749A CN 106128496 A CN106128496 A CN 106128496A
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- Prior art keywords
- layer
- mtj
- voltage
- device based
- switch pipe
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/146—Write once memory, i.e. allowing changing of memory content by writing additional bits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
The present invention relates to a kind of disposal programmable device based on capacitor mechanism and programming realization method, including a switch metal-oxide-semiconductor, one MTJ (MTJ) and an electric capacity, the present invention passes through a chargeable electric capacity, in the case of voltage is less, by the way of producing electric capacity charging higher than MTJ normal program voltage, OTP parts is carried out one-time write, punch the barrier layer in MTJ, thus reach the effect of one-time programming.The method utilizes the mode of internal capacitance charging supercharging, reduces the program voltage needed for outside, compares tradition OTP structure, and area occupied is little, it is easy to accomplish, simple to operate, the power consumption being possible not only to reduce one-time programming also can save manufacturing cost.
Description
Technical field
The present invention relates to IC manufacturing field, particularly relate to a kind of disposal programmable device based on capacitor mechanism
And programming realization method.
Background technology
OTP (one time programmable, disposable programmable device) is common a kind of NVM (non-volatile memories
Device), one-off programming is irreversible in programming process, only allows to write once.STT-MRAM is a kind of non-volatile memorizer,
Its storage organization uses MTJ MTJ, and middle is referred to as barrier layer, is free layer and reference layer up and down.
One-off programming for MTJ (MTJ) generally uses the mode added high pressure to puncture barrier layer, Ji Chuanhou
Barrier layer show as Low ESR (about 100 ohms).The breakdown voltage of barrier layer is higher than common program voltage, and
Owing to switching tube exists conducting resistance, the voltage of outside is caused must effectively to puncture the barrier layer of MTJ by sufficiently high guarantee, this
Planting traditional mode and generally require extra high input voltage structure, not only design circuit structure is complicated, too increases one-time programming
Power consumption.
Summary of the invention
The present invention is to overcome above-mentioned weak point, it is therefore intended that provide a kind of One Time Programmable based on capacitor mechanism
Device, mainly includes MOS switch pipe, MTJ, electric capacity, and area occupied is little, simple in construction, it is easy to accomplish.
Another object of the present invention is to provide a kind of disposal programmable device based on capacitor mechanism and programming realization side
Method, this method passes through an electric capacity, in the case of voltage is less, by producing electric capacity charging higher than MTJ normal program electricity
The mode of pressure carries out one-time write to OTP parts, punches the barrier layer in MTJ, thus reaches the effect of one-time programming；The party
Method utilizes the mode of internal capacitance charging supercharging, reduces the program voltage needed for outside, reduces the power consumption of one-time programming.
The present invention is to reach above-mentioned purpose by the following technical programs: a kind of One Time Programmable device based on capacitor mechanism
Part, including: MOS switch pipe, MTJ, electric capacity, wordline, bit line, sensitive amplifier circuit, potential generator；MOS opens
Close pipe to be connected with MTJ, wordline, potential generator respectively；Electric capacity one end is connected with wordline, the other end respectively with MOS
Switching tube, MTJ are connected；MTJ is connected with sensitive amplifier circuit by bit line.
As preferably, described MTJ includes free layer, barrier layer, reference layer；Barrier layer is clipped in free layer and ginseng
Examine between layer.
As preferably, the free layer of described MTJ is connected with the drain electrode of MOS switch pipe；Reference layer is connected with bit line.
As preferably, the grid of described MOS switch pipe is connected with wordline；The source electrode of MOS switch pipe and potential generator
It is connected.
As preferably, the current potential that described potential generator produces is fixing earthing potential.
As preferably, two of described MTJ is also with top layer metallic layer and bottom metal layer, and free layer connects
It is connected with the drain electrode of MOS switch pipe after top layer metallic layer；Reference layer is connected with bit line after being connected to bottom metal layer.
As preferably, described free layer is connected with the drain electrode of MOS switch pipe after being connected to bottom metal layer；Reference layer is connected to
It is connected with bit line after top layer metallic layer.
As preferably, the described electric capacity other end connects with the drain electrode of MOS switch pipe, the free layer of MTJ respectively
Connect.
A kind of programming realization method of disposal programmable device based on capacitor mechanism, applies MOS switch pipe source electrode
Earthing potential, applies common program voltage in wordline, applies voltage, keep bit-line voltage not after the some time on bit line
Becoming, word line voltage is reduced to zero, the voltage that electric capacity is connected with metal-oxide-semiconductor drain electrode produces the negative voltage of a transient state, this negative voltage
And the voltage constituted between bit line between MTJ, this voltage exceedes common program voltage, and by the barrier layer of MTJ
Puncture, complete programming.
The beneficial effects of the present invention is: 1) this method is by a chargeable electric capacity, in the case of voltage is less,
By the way of producing electric capacity charging higher than MTJ normal program voltage, OTP parts is carried out one-time write, punch in MTJ
Barrier layer, thus reach the effect of one-time programming；2) the method utilizes the mode of internal capacitance charging supercharging, reduces outside
Required program voltage, reduces the power consumption of one-time programming；3) device area occupied of the present invention is little, it is easy to accomplish, simple to operate,
The power consumption being possible not only to reduce one-time programming also can save manufacturing cost.
Accompanying drawing explanation
Fig. 1 is the basic structure schematic diagram of present invention one-off programming based on capacitor mechanism device；
Fig. 2 is the part-structure schematic diagram of present invention one-off programming based on capacitor mechanism device；
Fig. 3 is the schematic flow sheet of programming realization method of the present invention；
Fig. 4 is the program timing sequence figure of the inventive method.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described further, but protection scope of the present invention is not limited in
This:
Embodiment: as it is shown in figure 1, a kind of disposal programmable device based on capacitor mechanism is by MOS switch pipe, magnetic tunnel
Road knot, electric capacity, wordline, bit line, sensitive amplifier circuit, potential generator form.MTJ includes free layer, potential barrier
Layer, reference layer；Barrier layer is clipped between free layer and reference layer, as shown in Figure 2.A point in Fig. 1 drains for MOS switch pipe；Magnetic
Property tunnel knot the drain electrode of free layer and MOS switch pipe be connected；The reference layer of MTJ is connected with bit line.MOS switch pipe
Grid is connected with wordline；The source electrode of MOS switch pipe is connected with potential generator.The current potential that described potential generator produces is
Fixing earthing potential.Electric capacity one end is connected with wordline, and the other end drains with MOS switch pipe respectively, the freedom of MTJ
Layer is connected.
Two of MTJ also includes top layer metallic layer and bottom metal layer, and free layer is connected to top layer metallic layer
It is connected with the drain electrode of MOS switch pipe afterwards；Reference layer is connected with bit line after being connected to bottom metal layer.It addition, annexation can also
It is to be connected with the drain electrode of MOS switch pipe after free layer is connected to bottom metal layer；Reference layer be connected to after top layer metallic layer with bit line
It is connected.
As it is shown on figure 3, a kind of programming realization method of disposal programmable device based on capacitor mechanism, to MOS switch
Pipe source electrode applies earthing potential, applies common program voltage in wordline, applies voltage on bit line, after a period of time, protects
Holding bit-line voltage constant, word line voltage is reduced to zero, the voltage that electric capacity is connected with metal-oxide-semiconductor drain electrode will produce the negative electricity of a transient state
Pressure, constitutes the voltage between MTJ between this negative voltage and bit line, this voltage will exceed common program voltage, and will
The barrier layer of MTJ punctures.The program timing sequence figure of the inventive method is as shown in Figure 4.
The one-off programming device of the present invention can be integrated into mobile phone, computer, embedded chip, automotive electronics chip, independent
In formula memorizer, handheld device, radio-frequency (RF) tag.
It is the specific embodiment of the present invention and the know-why used described in Yi Shang, if conception under this invention institute
Make change, function produced by it still without departing from description and accompanying drawing contained spiritual time, must belong to the present invention's
Protection domain.
Claims (9)
1. a disposal programmable device based on capacitor mechanism, it is characterised in that including: MOS switch pipe, MTJ,
Electric capacity, wordline, bit line, sensitive amplifier circuit, potential generator；MOS switch pipe respectively with MTJ, wordline, electricity
Position generating means connects；Electric capacity one end is connected with wordline, and the other end is connected with MOS switch pipe, MTJ respectively；Magnetic tunnel
Road knot is connected with sensitive amplifier circuit by bit line.
A kind of disposal programmable device based on capacitor mechanism the most according to claim 1, it is characterised in that: described magnetic
Property tunnel knot includes free layer, barrier layer, reference layer；Barrier layer is clipped between free layer and reference layer.
A kind of disposal programmable device based on capacitor mechanism the most according to claim 2, it is characterised in that: described magnetic
Property tunnel knot the drain electrode of free layer and MOS switch pipe be connected；Reference layer is connected with bit line.
A kind of disposal programmable device based on capacitor mechanism the most according to claim 1, it is characterised in that: described
The grid of MOS switch pipe is connected with wordline；The source electrode of MOS switch pipe is connected with potential generator.
A kind of disposal programmable device based on capacitor mechanism the most according to claim 1, it is characterised in that: described electricity
The current potential that position generating means produces is fixing earthing potential.
A kind of disposal programmable device based on capacitor mechanism the most according to claim 3, it is characterised in that: described magnetic
Two of property tunnel knot also with top layer metallic layer and bottom metal layer, free layer be connected to after top layer metallic layer with MOS switch
Pipe drain electrode connects；Reference layer is connected with bit line after being connected to bottom metal layer.
A kind of disposal programmable device based on capacitor mechanism the most according to claim 6, it is characterised in that: described from
It is connected with the drain electrode of MOS switch pipe after being connected to bottom metal layer by layer；Reference layer is connected with bit line after being connected to top layer metallic layer.
A kind of disposal programmable device based on capacitor mechanism the most according to claim 1, it is characterised in that: described electricity
Hold the other end to be connected with the drain electrode of MOS switch pipe, the free layer of MTJ respectively.
9. the programming realization method of a disposal programmable device based on capacitor mechanism, it is characterised in that: to MOS switch pipe
Source electrode applies earthing potential, applies common program voltage in wordline, applies voltage on bit line, keeps bit line after the some time
Voltage is constant, and word line voltage is reduced to zero, and the voltage that electric capacity is connected with metal-oxide-semiconductor drain electrode produces the negative voltage of a transient state, this
Constituting the voltage between MTJ between negative voltage and bit line, this voltage exceedes common program voltage, and by MTJ
Barrier layer punctures, and completes programming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610429749.7A CN106128496A (en) | 2016-06-16 | 2016-06-16 | A kind of disposal programmable device based on capacitor mechanism and programming realization method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610429749.7A CN106128496A (en) | 2016-06-16 | 2016-06-16 | A kind of disposal programmable device based on capacitor mechanism and programming realization method |
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| CN106128496A true CN106128496A (en) | 2016-11-16 |
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| CN201610429749.7A Pending CN106128496A (en) | 2016-06-16 | 2016-06-16 | A kind of disposal programmable device based on capacitor mechanism and programming realization method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3667668A1 (en) * | 2018-12-14 | 2020-06-17 | NXP USA, Inc. | Mram memory with otp cells |
| CN112199041A (en) * | 2020-09-24 | 2021-01-08 | 浙江驰拓科技有限公司 | Memory element, memory circuit, data access method and data access device |
| WO2021022410A1 (en) * | 2019-08-02 | 2021-02-11 | 北京大学 | Resistive random access memory operation circuit and operation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104620319A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | Otp scheme with multiple magnetic tunnel junction devices in a cell |
| CN104620320A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | OTP cell with reversed MTJ connection |
| CN104733036A (en) * | 2013-12-24 | 2015-06-24 | 英特尔公司 | Hybrid memory and mtj based mram bit-cell and array |
-
2016
- 2016-06-16 CN CN201610429749.7A patent/CN106128496A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104620319A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | Otp scheme with multiple magnetic tunnel junction devices in a cell |
| CN104620320A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | OTP cell with reversed MTJ connection |
| CN104733036A (en) * | 2013-12-24 | 2015-06-24 | 英特尔公司 | Hybrid memory and mtj based mram bit-cell and array |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3667668A1 (en) * | 2018-12-14 | 2020-06-17 | NXP USA, Inc. | Mram memory with otp cells |
| US10699764B1 (en) | 2018-12-14 | 2020-06-30 | Nxp Usa, Inc. | MRAM memory with OTP cells |
| WO2021022410A1 (en) * | 2019-08-02 | 2021-02-11 | 北京大学 | Resistive random access memory operation circuit and operation method |
| CN112199041A (en) * | 2020-09-24 | 2021-01-08 | 浙江驰拓科技有限公司 | Memory element, memory circuit, data access method and data access device |
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Application publication date: 20161116 |