CN106125510A - A kind of negativity photoresistance thin film and preparation method and application - Google Patents
A kind of negativity photoresistance thin film and preparation method and application Download PDFInfo
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- CN106125510A CN106125510A CN201610759032.9A CN201610759032A CN106125510A CN 106125510 A CN106125510 A CN 106125510A CN 201610759032 A CN201610759032 A CN 201610759032A CN 106125510 A CN106125510 A CN 106125510A
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- Prior art keywords
- thin film
- negativity
- negativity photoresistance
- photosensitive resin
- photoresistance
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Electroluminescent Light Sources (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Open a kind of negativity photoresistance thin film of the present invention and preparation method and application, wherein, the photosensitive resin in described negativity photoresistance solution is the photosensitive resin with fluoro-containing group.The present invention is by replacing Conventional photosensitive resin with the photosensitive resin with fluoro-containing group, during negativity photoresistance solution drying and forming-film, the photosensitive resin of fluoro-containing group can be relatively low due to its surface, tend to assemble at film surface, therefore after drying and forming-film, photosensitive resin and sensitizer in photoresistance thin film can form different Concentraton gradient distributions, the concentration of sensitizer increases the most successively, therefore when exposure, lower film is owing to sensitizer content is higher than topmost thin film, required exposure dose is less than topmost thin film, thus when counteracting exposure, light exposure minor impact the most successively, and then the formation of chamfering after preventing from developing.
Description
Technical field
The present invention relates to LED technology field, particularly relate to a kind of negativity photoresistance thin film and preparation method thereof and answer
With.
Background technology
Photoresistance is also called photoresist, is the light-sensitive material in many industrial process, has extensively in display floater industry at present
Use, in the gold-tinted processing procedure of tft array, need repeatedly to use photoresist, in this external OLED display panel, pixel circle
Given layer, also known as pixel bank, is generally also and uses photoresist to prepare.
Photoresistance has two kinds, positivity photoresistance and negativity photoresistance, and its exposed portion of positivity photoresistance is dissolved in photoresistance developer solution, unexposed
Being partially insoluble in photoresistance developer solution, the light exposure accepted due to usual topmost thin film can be more than lower film, therefore positivity photoresistance
It is easily formed low-angle tape angle (inclination angle), for making pixel bank advantageously.But owing to the material of negativity photoresistance becomes
Originally it is significantly less than positivity photoresistance, therefore tends to the consideration of cost of manufacture, it is intended to use negativity photoresistance to make pixel bank.Negativity
Photoresistance there is the problem that its exposed portion of negativity photoresistance does not dissolves in photoresistance developer solution, and unexposed portion is dissolved in photoresistance developer solution,
As it is shown in figure 1,1 be negativity photoresistance thin film in Fig. 1,2 is photosensitive resin, and 3 is sensitizer, and 4 is substrate, and 5 is photoresistance pattern, due to
The light exposure that generally topmost thin film accepts can be more than lower film, and the photosensitive resin 2 in negativity photoresistance thin film 1 is equal with sensitizer 3
Even blended, therefore after exposure imaging, topmost thin film is because light exposure is more than lower film, and therefore after development, topmost thin film is not dissolved in
Developer solution be partially larger than lower film, thus be easily formed chamfering, this can affect the precision of photoetching process, particularly disadvantageous in
The making of pixel bank of OLED display panel, the existence of chamfering, in the film deposition process in later stage, especially evaporation top electricity
During pole, easily cause film breaks, form defect, reduce product yield.
Therefore, prior art has yet to be improved and developed.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of negativity photoresistance thin film and preparation side thereof
Method and application, it is intended to solve the problem that the development of existing negativity photoresistance exposure forms chamfering.
Technical scheme is as follows:
A kind of negativity photoresistance method for manufacturing thin film preventing from forming chamfering, wherein, including step:
A, first coating negativity photoresistance solution on substrate, then dry, obtain negativity photoresistance thin film；Wherein, described negativity light
Photosensitive resin in resistance solution is the photosensitive resin with fluoro-containing group；
B, secondly by exposure mask, negativity photoresistance thin film is exposed；
C, finally to exposure after negativity photoresistance thin film develop.
The negativity photoresistance method for manufacturing thin film of described prevented formation chamfering, wherein, described in there is the sense of fluoro-containing group
Photopolymer resin is photo-polymerization type photosensitive resin or photo-crosslinking type photosensitive resin.
The negativity photoresistance method for manufacturing thin film of described prevented formation chamfering, wherein, described photo-polymerization type photosensitive resin
For vinyl monomer.
The negativity photoresistance method for manufacturing thin film of described prevented formation chamfering, wherein, described photo-crosslinking type photosensitive resin
For polyvinyl alcohol laurate.
The negativity photoresistance method for manufacturing thin film of described prevented formation chamfering, wherein, the thickness of negativity photoresistance thin film is 1
~3um。
The negativity photoresistance method for manufacturing thin film of described prevented formation chamfering, wherein, in step A, drying specifically includes:
First carrying out front baking, front baking condition is: temperature 70 ~ 100 DEG C, and the time is 60-150s.
The negativity photoresistance method for manufacturing thin film of described prevented formation chamfering, wherein, described substrate be rigid substrates or
Flexible base board.
The negativity photoresistance method for manufacturing thin film of described prevented formation chamfering, wherein, is coated with spin coating proceeding on substrate
Cover negativity photoresistance solution.
A kind of negativity photoresistance thin film, wherein, uses as above method described in any one to be prepared from.
The application of a kind of negativity photoresistance thin film as above, it is characterised in that described negativity photoresistance thin film is applied to
Make pixel and define layer.
Beneficial effect: the present invention is by replacing Conventional photosensitive resin, at negativity light with the photosensitive resin with fluoro-containing group
During resistance solution drying and forming-film, the photosensitive resin of fluoro-containing group can be relatively low due to its surface, it is intended to thin at negativity photoresistance
Film surface aggregation, therefore after drying and forming-film, photosensitive resin and sensitizer in negativity photoresistance thin film can form different concentration ladders
Degree distribution, the concentration of sensitizer increases the most successively, and therefore when exposure, lower film is owing to sensitizer content is higher than upper
Layer film, required exposure dose is less than topmost thin film, thus when counteracting exposure, light exposure is the least
Impact, and then prevent the formation of chamfering after development.
Accompanying drawing explanation
Fig. 1 is the process chart of existing negativity photoresistance thin film exposure imaging.
Fig. 2 is the flow chart of a kind of method preferred embodiment preventing the development of negativity photoresistance exposure from forming chamfering of the present invention.
Fig. 3 is the process chart of negativity photoresistance thin film exposure imaging of the present invention.
Detailed description of the invention
The present invention provides a kind of negativity photoresistance thin film and preparation method and application, for making the purpose of the present invention, technical side
Case and effect are clearer, clear and definite, and the present invention is described in more detail below.Should be appreciated that concrete reality described herein
Execute example only in order to explain the present invention, be not intended to limit the present invention.
Referring to Fig. 2, Fig. 2 is that a kind of negativity photoresistance method for manufacturing thin film preventing from forming chamfering of the present invention is preferably implemented
The flow chart of example, as it can be seen, it includes step:
S100, first coating negativity photoresistance solution on substrate, then dry, obtain negativity photoresistance thin film；Wherein, described negativity
Photosensitive resin in photoresistance solution is the photosensitive resin with fluoro-containing group；
S200, secondly by exposure mask, negativity photoresistance thin film is exposed；
S300, finally to exposure after negativity photoresistance thin film develop.
The present invention, by replacing Conventional photosensitive resin with the photosensitive resin with fluoro-containing group, is dried at negativity photoresistance solution
During film forming, the photosensitive resin of fluoro-containing group can be relatively low due to its surface, it is intended to assembles at negativity photoresistance film surface,
Therefore, after drying and forming-film, photosensitive resin and sensitizer in negativity photoresistance thin film can form different Concentraton gradient distributions, sensitizing
The concentration of agent increases the most successively, and therefore when exposure, lower film is owing to sensitizer content is higher than topmost thin film, required
Exposure dose be less than topmost thin film, thus when counteracting exposure, light exposure minor impact the most successively, Jin Erfang
The only formation of chamfering after development.
In step S100, described substrate is rigid substrates or flexible base board.Such as, the optional silicon chip of described rigid substrates, gold
The rigid substrates such as genus, glass or rustless steel.The optional polyimides of described flexible base board (PI), polyethylene terephthalate
Or the flexible base board such as PEN (PEN) (PET).When described substrate is flexible base board, need to be flexible by these
Substrate attaches or film forming the most in advance, and this rigid substrates can be glass etc..
Described step S100 specifically includes step: substrate carries out clean process, negative with spin coating proceeding coating on substrate
Property photoresistance solution, then dries, obtains negativity photoresistance thin film.Such as, when glass substrate selected by described substrate, in advance to glass
Substrate carries out clean process with the cleaning of electron level, and coating negativity photoresistance solution, then dries the most on the glass substrate,
Obtaining negativity photoresistance thin film, described negativity photoresistance film thickness depends on practical devices needs, about 1 ~ 3um.Described drying has
Body includes: first carry out front baking, and front baking condition is: temperature 70 ~ 100 DEG C (such as 90 DEG C), and the time is 60 ~ 150s(such as 60s).
In described step S100, the material of described negativity photoresistance solution comprises and has the photosensitive resin of fluoro-containing group, sensitizing
Agent, solvent and additive etc..Preferably, by weight, the material of negativity photoresistance solution of the present invention comprises 20 ~ 80 parts
There is the photosensitive resin of fluoro-containing group, the sensitizer of 20 ~ 90 parts, the solvent of 250 ~ 350 parts and the additive of 2 ~ 10 parts, heavy at this
Under amount proportioning, the formation of chamfering after can preventing from further developing.Wherein, there is the photosensitive resin of fluoro-containing group as bonding described in
Agent, the pixel made defines layer machinery and chemical property (such as adhesiveness, film thickness, heat stability etc.)；Described sensitizing
Agent can occur photochemical reaction under luminous energy effect, and described sensitizer is a kind of photosensitizer discharging nitrogen after overexposure,
The free radical produced forms crosslinking between rubber molecule, thus becomes insoluble in developer solution；Described solvent can keep negativity photoresistance
The liquid condition of solution, makes negativity photoresistance solution have good mobility, and such as, described solvent can be dimethylbenzene；Described
Additive can be used for changing some activity of negativity photoresistance solution, as added dye to improve negativity photoresistance solution to occur to reflect
Toner etc..The present invention uses the photosensitive resin with fluoro-containing group to replace conventional photosensitive resin preparation negativity photoresistance solution, logical
Cross fluorine-containing photosensitive resin low-surface-energy and tend to the characteristic that film surface is assembled so that dense in negativity photoresistance thin film of sensitizer
Degree increases the most successively, thus effectively offsets what light exposure when exposing was sequentially reduced from top to bottom in negativity photoresistance thin film
Impact, and then prevent precision and the pixel of the formation of chamfering, beneficially photoetching process after negativity photoresistance thin film exposure imaging
The making of bank.
Preferably, the photosensitive resin with fluoro-containing group of the present invention can be photo-polymerization type photosensitive resin or photo-crosslinking
Type photosensitive resin.Such as, described photo-polymerization type photosensitive resin can be but be not limited to vinyl monomer, the described photosensitive tree of photo-crosslinking type
Fat can be but be not limited to polyvinyl alcohol laurate.
In step S200, by exposure mask, negativity photoresistance thin film is exposed.Specifically, the present invention uses mask plate
Described negativity photoresistance thin film is exposed, makes negativity photoresistance thin film cross-link, also to negativity photoresistance after crosslinking by exposure
Thin film carries out molding and etching processing, forms the negativity photoresistance thin film of patterning.Owing to exposure light source is had by negativity photoresistance thin film
Having absorption, therefore, the light exposure of whole negativity photoresistance thin film is sequentially reduced to lower surface from negativity photoresistance thin film upper surface,
For conventional negativity photoresistance thin film, this situation easily causes the formation of chamfering, and the negativity photoresistance thin film in the present invention, by
Concentration in sensitizer increases in negativity photoresistance thin film the most successively, and the concentration of sensitizer is the biggest, negativity photoresistance thin film
Expose required light exposure completely the least, therefore regulated by the Concentraton gradient of sensitizer, light exposure can be eliminated and subtract successively
The little impact on whole negativity photoresistance thin film exposure environment.
In step S300, the negativity photoresistance thin film after exposure is developed, owing to the Concentraton gradient of sensitizer counteracts
The gradient of light exposure reduces, and the negativity photoresistance thin film after development will not form chamfering；Further, it is also possible to by the change regulating concentration
Change gradient and form low-angle tape angle, it is simple to make pixel bank.
Fig. 3 is the process chart of negativity photoresistance thin film exposure imaging of the present invention, and wherein, 6 is negativity photoresistance thin film, and 7 are
Having the photosensitive resin of fluoro-containing group, 8 is sensitizer, and 9 is substrate, and 10 is photoresistance pattern.The present invention is by with having fluorine-containing base
The photosensitive resin 7 of group replaces Conventional photosensitive resin, during negativity photoresistance solution drying and forming-film, and the photosensitive tree of fluoro-containing group
Fat 7 can be relatively low due to its surface, it is intended to assembles at negativity photoresistance film surface, therefore after drying and forming-film, and negativity photoresistance thin film
In photosensitive resin and sensitizer can form the distribution of different Concentraton gradient, the concentration of sensitizer increases the most successively, because of
This is when exposure, and lower film is owing to sensitizer content is higher than topmost thin film, and required exposure dose is less than topmost thin film, from
And when counteracting exposure, light exposure minor impact the most successively, and then prevent the formation of chamfering after development.
Based on said method, the present invention also provides for a kind of negativity photoresistance thin film, and it uses as above method described in any one
It is prepared from.Photosensitive resin in negativity photoresistance thin film of the present invention uses the photosensitive resin with fluoro-containing group, thus the most anti-
The only precision of the formation of chamfering, beneficially photoetching process and the making of pixel bank after negativity photoresistance thin film exposure imaging.
The present invention also provides for the application of a kind of negativity photoresistance thin film, is applied to described negativity photoresistance thin film make pixel circle
Given layer.When the pixel that is applied to the negativity photoresistance thin film of the present invention to make defines layer, not only reduce production cost, also add into
The yield of product and the effect of device.
In sum, a kind of negativity photoresistance thin film of the present invention and preparation method and application, the present invention is by with having
The photosensitive resin of fluoro-containing group replaces Conventional photosensitive resin, during negativity photoresistance solution drying and forming-film, fluoro-containing group
Photosensitive resin can be relatively low due to its surface, it is intended to assembles at film surface, therefore after drying and forming-film, and photosensitive in photoresistance thin film
Resin and sensitizer can form different Concentraton gradient distributions, and the concentration of sensitizer increases the most successively, therefore in exposure
Time, lower film is owing to sensitizer content is higher than topmost thin film, and required exposure dose is less than topmost thin film, thus counteracts
During exposure, light exposure minor impact the most successively, and then prevent the formation of chamfering after development.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved according to the above description or to convert, all these modifications and variations all should belong to the guarantor of claims of the present invention
Protect scope.
Claims (10)
1. the negativity photoresistance method for manufacturing thin film that can prevent from forming chamfering, it is characterised in that include step:
A, first coating negativity photoresistance solution on substrate, then dry, obtain negativity photoresistance thin film；Wherein, described negativity light
Photosensitive resin in resistance solution is the photosensitive resin with fluoro-containing group；
B, secondly by exposure mask, negativity photoresistance thin film is exposed；
C, finally to exposure after negativity photoresistance thin film develop.
The negativity photoresistance method for manufacturing thin film preventing from forming chamfering the most according to claim 1, it is characterised in that described
The photosensitive resin with fluoro-containing group is photo-polymerization type photosensitive resin or photo-crosslinking type photosensitive resin.
The negativity photoresistance method for manufacturing thin film preventing from forming chamfering the most according to claim 2, it is characterised in that described
Photo-polymerization type photosensitive resin is vinyl monomer.
The negativity photoresistance method for manufacturing thin film preventing from forming chamfering the most according to claim 2, it is characterised in that described
Photo-crosslinking type photosensitive resin is polyvinyl alcohol laurate.
The negativity photoresistance method for manufacturing thin film preventing from forming chamfering the most according to claim 1, it is characterised in that negativity
The thickness of photoresistance thin film is 1 ~ 3um.
The negativity photoresistance method for manufacturing thin film preventing from forming chamfering the most according to claim 1, it is characterised in that step
In A, drying specifically includes: first carry out front baking, and front baking condition is: temperature 70 ~ 100 DEG C, and the time is 60 ~ 150s.
The negativity photoresistance method for manufacturing thin film preventing from forming chamfering the most according to claim 1, it is characterised in that described
Substrate is rigid substrates or flexible base board.
The negativity photoresistance method for manufacturing thin film preventing from forming chamfering the most according to claim 1, it is characterised in that at base
Negativity photoresistance solution is coated with spin coating proceeding on plate.
9. a negativity photoresistance thin film, it is characterised in that use the method as described in any one of claim 1 to 8 to be prepared from.
10. the application of a negativity photoresistance thin film as claimed in claim 9, it is characterised in that by described negativity photoresistance thin film
It is applied to make pixel and defines layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610759032.9A CN106125510B (en) | 2016-08-30 | 2016-08-30 | Negative photoresist film and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610759032.9A CN106125510B (en) | 2016-08-30 | 2016-08-30 | Negative photoresist film and preparation method and application thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106125510A true CN106125510A (en) | 2016-11-16 |
| CN106125510B CN106125510B (en) | 2020-09-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610759032.9A Active CN106125510B (en) | 2016-08-30 | 2016-08-30 | Negative photoresist film and preparation method and application thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113549370A (en) * | 2021-07-02 | 2021-10-26 | 江苏海田电子材料有限公司 | High-photosensitivity imaging solder resist ink and preparation method thereof |
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| CN1711503A (en) * | 2002-11-06 | 2005-12-21 | 旭硝子株式会社 | Negative photosensitive resin composition |
| US20070134595A1 (en) * | 2005-12-08 | 2007-06-14 | Microchem Corp. | Pressurized aerosol formulation for use in radiation sensitive coatings |
| CN101331157A (en) * | 2005-12-15 | 2008-12-24 | 旭硝子株式会社 | Fluorine-containing polymer, negative photosensitive composition and partition wall |
| CN103360807A (en) * | 2013-07-01 | 2013-10-23 | 恒昌涂料（惠阳）有限公司 | Fluorine-containing light-cured waterborne coating and preparation method thereof |
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2016
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|---|---|---|---|---|
| CN1615458A (en) * | 2002-01-09 | 2005-05-11 | 科莱恩金融(Bvi)有限公司 | Negative deep ultraviolet photoresist |
| CN1639634A (en) * | 2002-03-04 | 2005-07-13 | 希普雷公司 | Negative photoresists for short wavelength imaging |
| CN1711503A (en) * | 2002-11-06 | 2005-12-21 | 旭硝子株式会社 | Negative photosensitive resin composition |
| US20070134595A1 (en) * | 2005-12-08 | 2007-06-14 | Microchem Corp. | Pressurized aerosol formulation for use in radiation sensitive coatings |
| CN101331157A (en) * | 2005-12-15 | 2008-12-24 | 旭硝子株式会社 | Fluorine-containing polymer, negative photosensitive composition and partition wall |
| CN103360807A (en) * | 2013-07-01 | 2013-10-23 | 恒昌涂料（惠阳）有限公司 | Fluorine-containing light-cured waterborne coating and preparation method thereof |
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| CN113549370A (en) * | 2021-07-02 | 2021-10-26 | 江苏海田电子材料有限公司 | High-photosensitivity imaging solder resist ink and preparation method thereof |
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