CN106119953B - Straight pull type single crystal furnace silicon material throws device again - Google Patents
Straight pull type single crystal furnace silicon material throws device again Download PDFInfo
- Publication number
- CN106119953B CN106119953B CN201610791369.8A CN201610791369A CN106119953B CN 106119953 B CN106119953 B CN 106119953B CN 201610791369 A CN201610791369 A CN 201610791369A CN 106119953 B CN106119953 B CN 106119953B
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- China
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- charging chamber
- tremie pipe
- hoppers
- overturning hinge
- single crystal
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to straight pull type single crystal furnaces, it is desirable to provide straight pull type single crystal furnace silicon material throws device again.It includes charging chamber and tremie pipe that the straight pull type single crystal furnace silicon material throws device again, charging chamber is divided at least two hoppers, corresponding overturning hinge door is housed below each hopper, hanging ring is installed on each overturning hinge door, the top of tremie pipe and the lower muzzle of charging chamber, which close, to be installed, and the top of tremie pipe is welded with cross lifting strip；The top of charging chamber is equipped with charging chamber's upper cover plate and charging chamber's upper flange, it is disposed on charging chamber's upper cover plate and promotes motor and cylinder, it promotes motor and cross lifting strip is connected by steel wire rope, lifting for controlling tremie pipe, each cylinder is connected by steel wire rope with the hanging ring on corresponding overturning hinge door respectively, the opening and closing for controlling corresponding overturning hinge door.The present invention can complete multiple composite feeding-material, save the time by once vacuumizing.
Description
Technical field
The present invention relates to straight pull type single crystal furnace field, more particularly to straight pull type single crystal furnace silicon material throws device again.
Background technology
In straight pull type single crystal furnace crystal pulling production, since silica crucible service life is limited, in the silica crucible service life
Inventory is more in range, and pulled crystal is heavier, and unit source consumption is smaller, and production efficiency is also higher.Therefore Straight pull
After one stove silicon material crystal pulling of single crystal growing furnace is completed, the addition of silicon material is completed in the case where not blowing out cools down, it is cold can to save blowing out
But and time for vacuumizing, the production cycle is greatly shortened, production efficiency is improved.
Since silicon material has a gap before thawing, and while throwing again, can not possibly accomplish silicon material regular array in crucible
It is interior, therefore can not possibly can obtain reaching the silicon solution of crucible volume by once feeding intake, it needs to vacuumize in batches, throw
Material melts, then vacuumizes and feed intake, melts again, the silicon solution until that must reach crucible volume.
The silicon material occurred currently on the market throws device again all cannot be under conditions of not destroying furnace chamber of single crystal furnace vacuum
Complete the work that feeds intake in batches.The multiple throwing apparatus structure occurred currently on the market is complicated, it has not been convenient to and it is mobile, and can only throw again straight
Diameter is no more than the silicon material of 40mm, to the more demanding of silicon material.
Invention content
It is a primary object of the present invention to overcome deficiency in the prior art, provide it is a kind of once vacuumized, just it is complete
Throw the multiple throwing device of work again at multiple silicon material.In order to solve the above technical problems, the solution of the present invention is：
Straight pull type single crystal furnace silicon material is provided and throws device, including charging chamber and tremie pipe again, the charging chamber is divided at least two
A hopper, each hopper lower section are equipped with corresponding overturning hinge door, hanging ring are equipped on each overturning hinge door；
The top of the tremie pipe and the lower muzzle of charging chamber, which close, to be installed, and tremie pipe can free movement in the up-down direction；
The top of tremie pipe is equipped with tremie pipe upper flange, and the diameter of tremie pipe upper flange is more than the diameter of charging chamber Xia Kou, for limiting
Tremie pipe processed moves up and down stroke；The top of tremie pipe opens up 4 welding grooves (line across), and is welded with cross promotion
Item (two lifting strip intersections are welded into)；The inside of tremie pipe is additionally provided with helical barriers；
The top of charging chamber is equipped with charging chamber's upper cover plate and charging chamber's upper flange, and charging chamber's upper flange is evenly equipped with (12) spiral shell
Pit, for installing charging chamber's upper cover plate；It is disposed with promotion motor on charging chamber's upper cover plate, promotes motor and is connected by steel wire rope
Cross lifting strip, the lifting for controlling tremie pipe；Quantity cylinder identical with hopper quantity is additionally provided on charging chamber's upper cover plate,
Each cylinder is connected by steel wire rope with the hanging ring on corresponding overturning hinge door respectively, the opening and closing for controlling corresponding overturning hinge door；Charging
The lower section of room is equipped with sealing flange, for preventing extraneous air from entering charging chamber.
As a further improvement, the hopper, overturning hinge door, cylinder are respectively provided with six, i.e., the described charging chamber is equally divided into
No.1 hopper, No. two hoppers, No. three hoppers, No. four hoppers, No. five hoppers, No. six hoppers, No.1 overturning hinge door are mounted in No.1 hopper
Lower section, No. two overturning hinge doors are below No. two hoppers, and for No. three overturning hinge doors below No. three hoppers, No. four overturning hinge doors are mounted in No. four
Below hopper, No. five overturning hinge doors are below No. five hoppers, and No. six overturning hinge doors are below No. six hoppers, No.1 cylinder, No. two
Cylinder, No. three cylinders, No. four cylinders, No. five cylinders, No. six cylinders are distributed on charging chamber's upper cover plate.
As a further improvement, the straight pull type single crystal furnace silicon material throws device again to be not advising for 80mm to maximum gauge
Then single crystal silicon materials carry out multiple throwing (80mm diameters are almost the maximum gauge of silicon material, and the present apparatus does not require silicon material size).
As a further improvement, the blanking inside pipe wall, hopper inner wall, helical barriers surface be coated with Teflon
Material.
Compared with prior art, the beneficial effects of the invention are as follows：
1, charging chamber is divided into six, can complete six composite feeding-materials by once vacuumizing, save the time；
2, the present invention can reach 80mm to the multiple diameter maximum for throwing silicon material, reduce the requirement to silicon material, save cost；
3, the screw of tremie pipe can slow down silicon material gliding speed, prevent silicon material from smashing crucible, avoid splashing of silicon liquid.
Description of the drawings
Fig. 1 is charging chamber's overhead sectional view of the present invention.
Fig. 2 is charging chamber's vertical view of the present invention.
Fig. 3 is the right side view of the present invention.
Fig. 4 is the initial position figure of the present invention.
Location drawing when Fig. 5 is blanking of the present invention.
Reference numeral in figure is：1 No.1 hopper；2 No.1 overturning hinge doors；3 No. two hoppers；4 No. two overturning hinge doors；5 No. three material
Bucket；6 No. three overturning hinge doors；7 No. four hoppers；8 No. four overturning hinge doors；9 No. five hoppers；10 No. five overturning hinge doors；11 No. six hoppers；12 No. six
Overturning hinge door；13 cross lifting strips；14 No.1 cylinders；15 No. two cylinders；16 No. three cylinders；17 No. four cylinders；18 No. five cylinders；19
No. six cylinders；20 steel wire ropes；21 charging chamber's upper cover plates；22 charging chamber's upper flanges；23 sealing flanges；24 helical barriers；Under 25
Expects pipe；26 tremie pipe upper flanges.
Specific implementation mode
Present invention is further described in detail with specific implementation mode below in conjunction with the accompanying drawings：
It includes charging chamber and tremie pipe 25 that a kind of straight pull type single crystal furnace silicon material as shown in Figure 1, Figure 2, Figure 3 shows throws device again,
It vacuumizes, may be implemented repeatedly multiple to the maximum irregular single crystal silicon materials no more than a diameter of 80mm in the case that once
It throws.
Charging chamber is equally divided into the hopper 9, six of hopper 7, five of hopper 5, four of hopper 3, three of No.1 hopper 1, two
Hopper 11, each hopper lower section are equipped with corresponding overturning hinge door, i.e., No.1 overturning hinge door 2 is mounted in 1 lower section of No.1 hopper, No. two overturning hinge doors
4 mounted in No. two 3 lower sections of hopper, and for No. three overturning hinge doors 6 mounted in No. three 5 lower sections of hopper, No. four overturning hinge doors 8 are mounted in No. four 7 lower sections of hopper,
No. five overturning hinge doors 10 are mounted in No. five 9 lower sections of hopper, and No. six overturning hinge doors 12 are mounted in No. six 11 lower sections of hopper.It is installed on each overturning hinge door
There is hanging ring.
The top of charging chamber is equipped with charging chamber's upper cover plate 21 and charging chamber's upper flange 22, and charging chamber's upper flange 22 is 12 uniformly distributed
Threaded hole, for installing charging chamber's upper cover plate 21.It is disposed with promotion motor on charging chamber's upper cover plate 21, promotes motor and passes through steel wire
20 connection cross lifting strip 13 of rope controls the lifting of tremie pipe 25, promotes motor for promoting tremie pipe 25.Charging chamber's upper cover plate
It is also uniformly distributed on 21 that there are six cylinders, the i.e. cylinder 15, three of No.1 cylinder 14, two cylinder 16, four cylinder of cylinder 17, five
18, No. six cylinders 19, each cylinder is connected by steel wire rope 20 with the hanging ring on corresponding overturning hinge door respectively, for controlling corresponding conjunction
The opening and closing of page door, to control the whereabouts of silicon material in corresponding hopper.The lower section of charging chamber is equipped with sealing flange 23, for preventing
Extraneous air enters charging chamber.
The top of the tremie pipe 25 is equipped with tremie pipe upper flange 26, and tremie pipe 25 is closed with muzzle under charging chamber and installed, under
25 upper and lower directions of expects pipe is removable, and 26 outer diameter of tremie pipe upper flange is more than charging chamber Xia Kou, is moved down on tremie pipe 25 for limiting
Dynamic stroke.The upper cross shape of tremie pipe 25 opens up four welding grooves, and intersection is welded with two lifting strips and forms cross lifting strip 13,
Cross lifting strip 13 is for controlling the lifting of tremie pipe 25.The inside of tremie pipe 25 is additionally provided with helical barriers 24, for slowing down silicon
Expect the speed to glide, prevents silicon material from smashing crucible, avoid splashing of silicon liquid.
It is coated with teflon material on the surface of 25 inner wall of tremie pipe, hopper inner wall, helical barriers 24, silicon material is avoided to exist
It rubs with it in dropping process, causes to scrape into impurity, influence crystal growth.
When work：
After a stove crystal pulling is completed, single crystal growing furnace is answered into furnace chamber unscrewing, straight pull type single crystal furnace silicon material is thrown into six, device again
Then loading hopper is completed by charging chamber's sealing flange 23 and single crystal growing furnace cooperation, device initial position is as shown in Figure 4.Then
Charging chamber device is carried out after vacuumizing completion, it will by steel wire rope 20 and cross lifting strip 13 first with motor 17 is promoted
Tremie pipe 25 declines, and until tremie pipe upper flange 26 and charging chamber's sealing flange 23 just coordinate, 25 lower part of tremie pipe connects at this time
Nearly crucible opens cylinder 15 and is opened 1 lower section No.1 overturning hinge door 2 of No.1 hopper by steel wire rope 20, and silicon material is opened in No.1 hopper 1
Begin by the way that in 24 times slide-in crucibles of tremie pipe 25 and spiral, after the completion of blanking, control promotes motor 17 and passes through 20 He of steel wire rope
Cross lifting strip 13 withdraws tremie pipe 25 in charging chamber 19, followed by material.It is as shown in Figure 5 when device blanking.
After the completion of material, tremie pipe 25 is fallen again, and No. two overturning hinge doors 4 are controlled by No. two hoppers 3 by No. two cylinders 15
In interior silicon material tripping in crucible, tremie pipe 25 is promoted, completes silicon material material.In this way, being sequentially completed 5, No. four hoppers of No. three hoppers
7, then the blanking of silicon material and material in 9, No. six hoppers 11 of No. five hoppers release the cooperation of the present apparatus and single crystal growing furnace, remove this
Device is thrown again outside silicon material, it is outer to finish into again
Finally it should be noted that listed above is only specific embodiments of the present invention.It is clear that the invention is not restricted to
Above example can also have many variations.Those skilled in the art can directly lead from present disclosure
All deformations for going out or associating, are considered as protection scope of the present invention.
Claims (4)
1. straight pull type single crystal furnace silicon material throws device, including charging chamber and tremie pipe again, which is characterized in that the charging chamber be divided into
Few two hoppers, each hopper lower section are equipped with corresponding overturning hinge door, hanging ring are equipped on each overturning hinge door；
The top of the tremie pipe and the lower muzzle of charging chamber, which close, to be installed, and tremie pipe can free movement in the up-down direction；Blanking
The top of pipe is equipped with tremie pipe upper flange, and the diameter of tremie pipe upper flange is more than the diameter of charging chamber Xia Kou, under limiting
Expects pipe moves up and down stroke；The top of tremie pipe opens up 4 welding grooves, and is welded with cross lifting strip；The inside of tremie pipe is also
Equipped with helical barriers；
The top of charging chamber is equipped with charging chamber's upper cover plate and charging chamber's upper flange, and charging chamber's upper flange is evenly equipped with threaded hole, is used for
Charging chamber's upper cover plate is installed；It is disposed with promotion motor on charging chamber's upper cover plate, promotes motor and cross promotion is connected by steel wire rope
Item, the lifting for controlling tremie pipe；Quantity cylinder identical with hopper quantity, each cylinder are additionally provided on charging chamber's upper cover plate
It is connected respectively with the hanging ring on corresponding overturning hinge door by steel wire rope, the opening and closing for controlling corresponding overturning hinge door；The lower section of charging chamber
Equipped with sealing flange, for preventing extraneous air from entering charging chamber.
2. straight pull type single crystal furnace silicon material according to claim 1 throws device again, which is characterized in that the hopper, overturning hinge door,
Cylinder is respectively provided with six, i.e., the described charging chamber is equally divided into No.1 hopper, No. two hoppers, No. three hoppers, No. four hoppers, No. five material
Bucket, No. six hoppers, No.1 overturning hinge door is below No.1 hopper, and No. two overturning hinge doors are below No. two hoppers, No. three overturning hinge doors
Below No. three hoppers, No. four overturning hinge doors are below No. four hoppers, and No. five overturning hinge doors are below No. five hoppers, No. six conjunctions
For page door below No. six hoppers, No.1 cylinder, No. two cylinders, No. three cylinders, No. four cylinders, No. five cylinders, No. six cylinders are equal
Cloth is on charging chamber's upper cover plate.
3. straight pull type single crystal furnace silicon material according to claim 1 throws device again, which is characterized in that the straight pull type single crystal furnace
Silicon material throws device again to carry out multiple throwing to the irregular single crystal silicon materials that maximum gauge is 80mm.
4. the straight pull type single crystal furnace silicon material according to claims 1 to 3 any one throws device again, which is characterized in that described
Blanking inside pipe wall, hopper inner wall, helical barriers surface be coated with teflon material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610791369.8A CN106119953B (en) | 2016-08-31 | 2016-08-31 | Straight pull type single crystal furnace silicon material throws device again |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610791369.8A CN106119953B (en) | 2016-08-31 | 2016-08-31 | Straight pull type single crystal furnace silicon material throws device again |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106119953A CN106119953A (en) | 2016-11-16 |
| CN106119953B true CN106119953B (en) | 2018-08-28 |
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| CN201610791369.8A Active CN106119953B (en) | 2016-08-31 | 2016-08-31 | Straight pull type single crystal furnace silicon material throws device again |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108728902A (en) * | 2017-04-18 | 2018-11-02 | 上海新昇半导体科技有限公司 | A kind of polysilicon automatic feed system and its feed process |
| CN107881551A (en) * | 2017-12-20 | 2018-04-06 | 江苏拜尔特光电设备有限公司 | The material buffer device of single crystal growing furnace |
| CN111455452B (en) * | 2020-04-10 | 2021-11-30 | 西安奕斯伟材料科技有限公司 | Feeding device, crystal pulling furnace and feeding method |
| CN115142139B (en) * | 2022-09-01 | 2022-11-22 | 浙江求是半导体设备有限公司 | Single crystal growing furnace material system of throwing again |
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| CN102839414A (en) * | 2011-06-21 | 2012-12-26 | 浙江昱辉阳光能源有限公司 | Mono-crystalline silicon furnace continuous feeding device |
| KR101437488B1 (en) * | 2013-05-16 | 2014-09-03 | (주)에스테크 | Ingot raw material supply system |
| JP2014172092A (en) * | 2013-03-05 | 2014-09-22 | Rti Internat Metals Inc | Continuous casting furnace for long ingot casting |
| CN104419980A (en) * | 2013-08-28 | 2015-03-18 | 常州华腾合金材料有限公司 | Single crystal furnace feeding mechanism |
| CN105133010A (en) * | 2015-08-31 | 2015-12-09 | 中卫市银阳新能源有限公司 | Repeated charging device for single-crystal furnace |
| CN206052201U (en) * | 2016-08-31 | 2017-03-29 | 浙江晶盛机电股份有限公司 | A kind of straight pull type single crystal furnace silicon material throws device again |
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2016
- 2016-08-31 CN CN201610791369.8A patent/CN106119953B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102839414A (en) * | 2011-06-21 | 2012-12-26 | 浙江昱辉阳光能源有限公司 | Mono-crystalline silicon furnace continuous feeding device |
| JP2014172092A (en) * | 2013-03-05 | 2014-09-22 | Rti Internat Metals Inc | Continuous casting furnace for long ingot casting |
| KR101437488B1 (en) * | 2013-05-16 | 2014-09-03 | (주)에스테크 | Ingot raw material supply system |
| CN104419980A (en) * | 2013-08-28 | 2015-03-18 | 常州华腾合金材料有限公司 | Single crystal furnace feeding mechanism |
| CN105133010A (en) * | 2015-08-31 | 2015-12-09 | 中卫市银阳新能源有限公司 | Repeated charging device for single-crystal furnace |
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| CN106119953A (en) | 2016-11-16 |
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