CN106115616B - A kind of device for monitoring temperature and temperature monitoring method of MEMS processing technology - Google Patents

A kind of device for monitoring temperature and temperature monitoring method of MEMS processing technology Download PDF

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Publication number
CN106115616B
CN106115616B CN201610479967.1A CN201610479967A CN106115616B CN 106115616 B CN106115616 B CN 106115616B CN 201610479967 A CN201610479967 A CN 201610479967A CN 106115616 B CN106115616 B CN 106115616B
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sawtooth
heat
monitoring temperature
processing technology
temperature
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CN106115616A (en
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张立
张大成
杨芳
王玮
李睿
关淘淘
范泽新
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Peking University
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Peking University
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00Subject matter not provided for in other groups of this subclass
    • B81C99/0035Testing
    • B81C99/004Testing during manufacturing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00Subject matter not provided for in other groups of this subclass
    • B81C99/0035Testing
    • B81C99/005Test apparatus

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  • Manufacturing & Machinery (AREA)
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Abstract

The present invention provides a kind of device for monitoring temperature of MEMS processing technology, comprising: two heat drive actuator, and it includes two fixed anchor points that each heat, which drives actuator, which drives beam connection by heat, this two heat drive actuator and pass through an amplification lever connection;One movable sawtooth switch, including a sawtooth button and sawtooth lock, the sawtooth button are connected to the midpoint of the amplification lever, contain multiple a kind of sawtooth;Sawtooth lock includes two parallel long beams, is equipped with multiple two class sawtooth with a kind of jigsaw fit in the inside of each long beam.The present invention also provides a kind of temperature monitoring method of MEMS processing technology, when step includes: 1) using MEMS processing technology manufacture function element, companion manufactures above-mentioned device for monitoring temperature together;2) the tooth button measurement of the movable sawtooth switch of the device for monitoring temperature is checked after the completion of manufacture;3) measure to obtain maximum temperature achieved in manufacturing process according to above-mentioned tooth button.

Description

A kind of device for monitoring temperature and temperature monitoring method of MEMS processing technology
Technical field
The present invention relates to microelectromechanical systems (MEMS) processing technology fields, and in particular to one kind drives actuator based on heat MEMS processing technology device for monitoring temperature and temperature monitoring method.
Background technique
Microelectromechanical systems be microelectric technique development and application an important directions, be down toward nanoscale, on To the common name of mm-scale micro-structure processing technology, in a broad sense, technology mode very abundant almost relates to the various modern times Processing technology originates from semiconductor and microelectronic technique, is come using a variety of methods such as photoetching, extension as basic process steps Manufacture the micro-processing technology of Complex Three-Dimensional Body.Nowadays, the various kinds of sensors of microelectromechanical systems has been widely used in the people With, military every aspect, pressure gauge, accelerometer and gyro etc. all become in consumer electronics and the application of high-precision end Indispensable component.
Compared with traditional integrated circuit (IC) processing technology, MEMS processing technology is more complicated, different MEMS device Generally require different fabrication process conditions.And in the processing environment of MEMS device, the maximum temperature in technical process is outstanding To be important, in addition in the process of the given temperatures such as annealing, the processing steps such as deep plasma etching, anode linkage can also be generated Uncontrollable temperature environment.Especially in deep plasma etching, since ion bombardment will generate huge thermal energy in silicon wafer, and the heat Energy bring temperature, which increases, has randomness, it is difficult to which calculated in advance emulation obtains, simultaneously because etching process is generally in vacuum chamber Interior progress is difficult to realize real-time temperature monitoring by additional equipment at this stage.And the contact resistance, remnants in MEMS device are answered Power etc. is all by the extreme influence of process temperature, it is achieved that seeming outstanding to the monitoring for the maximum temperature that device in technical process is undergone To be important, and in practical MEMS technology, such means blank so far that can be detected with piece.
Summary of the invention
To overcome above-mentioned deficiency, the present invention provides the device for monitoring temperature and its manufacturing method of a kind of MEMS processing technology, The device is used to detect the maximum temperature that device is undergone in MEMS machining process.
In order to solve the above technical problems, the present invention adopts the following technical scheme:
A kind of device for monitoring temperature of MEMS processing technology, comprising:
Two heat drive actuator, and it includes two fixed anchor points that each heat, which drives actuator, which passes through heat Beam connection is driven, this two heat drive actuator and pass through an amplification lever connection;
One movable sawtooth switch, including a sawtooth button and sawtooth lock, the sawtooth button are connected in the amplification lever At point, contain multiple a kind of sawtooth;The sawtooth lock include two parallel long beams, the inside of each long beam be equipped with it is multiple with it is described Two class sawtooth of a kind of jigsaw fit.
Further, it is symmetrical about middle line to drive actuator for described two heat.
Further, it is multiple that the heat, which drives beam,.
Further, it is v-shaped structure that the heat, which drives beam,.
Further, the amplification lever is v-shaped structure.
Further, the sawtooth button bit is among described two long beams.
Further, the two classes sawtooth is located at one end that the long beam drives actuator close to the heat.
Further, a kind of sawtooth is symmetric teeth, can be engaged simultaneously with two class sawtooth on described two long beams.
A kind of temperature monitoring method of MEMS processing technology, step include:
1) when using MEMS processing technology manufacture function element, companion manufactures above-mentioned device for monitoring temperature together;
2) the tooth button measurement of the movable sawtooth switch of the device for monitoring temperature is checked after the completion of manufacture;
3) measure to obtain maximum temperature achieved in manufacturing process according to above-mentioned tooth button.
The invention has the advantages that when the temperature increases, heat, which drives actuator expanded by heating, can generate displacement, to drive Sawtooth button is mobile, and since movable sawtooth switch designs Cheng Dangxiang is switched, therefore when temperature is fallen after rise, in maximum temperature, expansion leads to position The sawtooth button of shifting will be lockable, and can go out process maximum temperature with inverse using thermal expansion coefficient and structural model.Present apparatus structure Simply, it can be manufactured with piece, it is most important that may be implemented to monitor in real time, observation is convenient, can carry out instant thermograph. For the temperature generated when being bonded compared with the prior art to etching because being difficult to monitor in vacuum chamber, the present apparatus and method can be real It now makes with piece and is detected with piece, at the end of function element fabrication processing, highest can be obtained by the observation present apparatus Thermograph.
Detailed description of the invention
Fig. 1 is a kind of device for monitoring temperature schematic diagram of MEMS processing technology in embodiment.
In figure: 1-fixed anchor point;2-amplification levers;3-heat drive beam;4-sawtooth buttons;5-sawtooth lock.
Fig. 2 is device in Fig. 1 with piece manufacturing process flow diagram.
In figure: 6-silicon wafers;Wire metals on 7-sheet glass;8-sheet glass;Pressure welding pad above 9-silicon wafers.
Specific embodiment
To enable features described above and advantage of the invention to be clearer and more comprehensible, special embodiment below, and institute's attached drawing is cooperated to make Detailed description are as follows.
The present embodiment provides a kind of device for monitoring temperature of MEMS processing technology, substantially estimate technique mistake according to actual needs In journey may experience maximum temperature, heat is designed in this example by taking maximum temperature is 800 DEG C as an example and drives actuator relative dimensions, It is noted that since the device is for the temperature during monitoring process, size except for the thickness with which kind of function specifically manufactured Energy device is not related, and structure is as shown in Figure 1.It takes V-arrangement MEMS heat to drive actuator in the present embodiment, designs 10 couples of V altogether Shape heat drive beam 3, every heat drive 3 width of beam be 10 μm, length be 100 μm, depending on thickness is with function element thickness, generally 50 to 70 μm, wherein V-arrangement angle is 5 °.The design that actuator places big lever 2 is driven using symmetrical two heat simultaneously, to guarantee output bit Moving is that straight line exports, wherein amplification lever 2 is designed as 200 μm of length, 15 μm of width, v-shaped angle is 5 °.
In actual design, heat drives the length of beam and the detection displacement substantially positive of logarithm and actual temperature driving generation It closes, and heat drives beam v-shaped angle and driving detection displacement relation is complex, general adjusting parameter may be set to the above two.According to Above-mentioned size can calculate the initial drive force and limit drive displacement that heat at each temperature drives actuator, according to two physics Amount design sawtooth button and sawtooth lock.At 800 DEG C, the Static output power that heat drives actuator is 5mN, and limit output displacement is 40 μ M, therefore the long beam size of sawtooth lock are as follows: 100 25 μm of μ ms, and the number of teeth is selected as 4 are divided into 10 μm.Result above can pass through generation The formula for entering thermal expansion stress is calculated, and directly can also emulate to obtain by ansys, and those skilled in the art should can Understand.
For a kind of device for monitoring temperature of the above-mentioned MEMS processing technology designed, can be existed by SOG bulk silicon technological It is manufactured together on same silicon wafer in company with function element, function element, that is, MEMS processing object and the monitoring temperature here The object of device detection, since the device can directly be manufactured with piece, therefore may be implemented to carry out the difficulties such as plasma etching online With the processing step monitoring temperature that additional equipment monitors, Fig. 2 is it with piece manufacturing process flow diagram, and specific process step includes:
1) define anchor point: first time light engraving loses, and 4-8 μm of etching depth;
2) definition interconnection: second photoetching, glass surface corrode 500nm shallow slot, sputter Au, remove later;
3) alignment bonding: silica glass anode linkage, 500 DEG C of bonding temperature;
4) KOH is thinned: 50-70 μm thick more than silicon wafer;
5) pressure welding metal sputtering on silicon: third time photoetching defines pressure welding pad;
6) deep etching release structure: fourth lithography, first time deep etching, 50-70 μm of etching depth.
After process flow, takes out former piece and be placed in optical microphotograph under the microscope, the tooth button of viewing activity sawtooth switch Measurement, i.e. sawtooth lock the sawtooth number being engaged with sawtooth button, and maximum temperature can be obtained by tooth button measurement.In this example, tooth button Measurement is first lock, i.e., heat drive actuator driven displacement is 10 μm under maximum temperature in technical process, passes through Solid Mechanics Classical formulas and actuator size can inverse to obtain maximum temperature be 400 DEG C, directly can also emulate to obtain by ansys, ability Those of ordinary skill should be appreciated that in domain.
The present invention is disclosed above by way of embodiment, and those skilled in the art can understand the present invention easily Construction, advantage and effect can pass through other different specific examples without departing substantially from the spirit and scope of the present invention It is implemented or is applied, each details can also carry out various modifications and be changed, protection scope is subject to claims.

Claims (8)

1. a kind of temperature monitoring method of MEMS processing technology, step include:
1) when using MEMS processing technology manufacture function element, in company with a kind of device for monitoring temperature is manufactured together, step includes:
1-1) first time light engraving loses, etching silicon wafer, to define the anchor point of the device for monitoring temperature;
A shallow slot out is corroded in 1-2) second of photoetching, etching glass face, sputters Au, removes later, to define interconnection;
The silicon wafer and the glass 1-3) are subjected to anode linkage;
The silicon wafer 1-4) is thinned using KOH;
1-5) third time photoetching, etches the silicon wafer, and pressure welding metal sputtering defines pressure welding pad;
1-6) fourth lithography carries out first time deep etching to the silicon wafer, to discharge structure;
2) the tooth button measurement of the movable sawtooth switch of the device for monitoring temperature is checked after the completion of manufacture;
3) measure to obtain maximum temperature achieved in manufacturing process according to above-mentioned tooth button.
2. a kind of device for monitoring temperature of MEMS processing technology is wrapped based on method described in the claims 1 in company with manufacturing It includes:
Two heat drive actuator, and it includes two fixed anchor points that each heat, which drives actuator, which drives beam by heat Connection, this two heat drive actuator and pass through an amplification lever connection;It is symmetrical about middle line that described two heat drive actuator;
One movable sawtooth switch, including a sawtooth button and sawtooth lock, the sawtooth button are connected to the midpoint of the amplification lever, Contain multiple a kind of sawtooth;Sawtooth lock includes two parallel long beams, is equipped with multiple and described one kind in the inside of each long beam Two class sawtooth of jigsaw fit.
3. device for monitoring temperature according to claim 2, which is characterized in that it is multiple that the heat, which drives beam,.
4. device for monitoring temperature according to claim 2, which is characterized in that it is v-shaped structure that the heat, which drives beam,.
5. device for monitoring temperature according to claim 2, which is characterized in that the amplification lever is v-shaped structure.
6. device for monitoring temperature according to claim 2, which is characterized in that the sawtooth button bit is in described two long beams Between.
7. device for monitoring temperature according to claim 2, which is characterized in that it is close that the two classes sawtooth is located at the long beam The heat drives one end of actuator.
8. device for monitoring temperature according to claim 2, which is characterized in that one kind sawtooth is symmetric teeth, can be simultaneously It is engaged with two class sawtooth on described two long beams.
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CA2682844A1 (en) * 2009-10-15 2011-04-15 Icspi Corp. Mems actuator device with integrated temperature sensors
CN105067137A (en) * 2015-07-27 2015-11-18 武汉大学 High-sensitivity high-resolution micro temperature sensor based on MEMS system and monitoring method of sensor

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AU6851101A (en) * 2000-06-19 2002-01-02 Univ Brigham Young Thermomechanical in-plane microactuator
US7239064B1 (en) * 2004-10-15 2007-07-03 Morgan Research Corporation Resettable latching MEMS temperature sensor apparatus and method
US7298954B2 (en) * 2005-06-16 2007-11-20 Xerox Corporation Waveguide shuttle MEMS variable optical attenuator
CN102359828B (en) * 2011-07-12 2013-04-24 东南大学 Micro-electronic temperature sensor and manufacturing process thereof
US9267962B2 (en) * 2013-08-09 2016-02-23 Icspi Corp. Scanning probe microscope comprising an isothermal actuator
CN104150432B (en) * 2014-07-30 2016-04-13 西安交通大学 A kind of fuse MEMS actuator of amplification of buckling based on secondary

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW499570B (en) * 1999-09-27 2002-08-21 Jds Uniphase Corp MEMS variable optical attenuator
CA2682844A1 (en) * 2009-10-15 2011-04-15 Icspi Corp. Mems actuator device with integrated temperature sensors
CN105067137A (en) * 2015-07-27 2015-11-18 武汉大学 High-sensitivity high-resolution micro temperature sensor based on MEMS system and monitoring method of sensor

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