CN106115612B - 一种晶圆平坦化方法 - Google Patents
一种晶圆平坦化方法 Download PDFInfo
- Publication number
- CN106115612B CN106115612B CN201610540682.4A CN201610540682A CN106115612B CN 106115612 B CN106115612 B CN 106115612B CN 201610540682 A CN201610540682 A CN 201610540682A CN 106115612 B CN106115612 B CN 106115612B
- Authority
- CN
- China
- Prior art keywords
- wafer
- polishing
- crystal column
- abrasive
- column surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000005498 polishing Methods 0.000 claims abstract description 80
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 31
- 239000012530 fluid Substances 0.000 claims description 22
- 239000003082 abrasive agent Substances 0.000 claims description 15
- 239000006061 abrasive grain Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 5
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 5
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 2
- 230000002209 hydrophobic effect Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000012805 post-processing Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00674—Treatments for improving wear resistance
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610540682.4A CN106115612B (zh) | 2016-07-11 | 2016-07-11 | 一种晶圆平坦化方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610540682.4A CN106115612B (zh) | 2016-07-11 | 2016-07-11 | 一种晶圆平坦化方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106115612A CN106115612A (zh) | 2016-11-16 |
CN106115612B true CN106115612B (zh) | 2017-11-17 |
Family
ID=57282839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610540682.4A Active CN106115612B (zh) | 2016-07-11 | 2016-07-11 | 一种晶圆平坦化方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106115612B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108214260B (zh) * | 2016-12-22 | 2020-03-17 | 蓝思科技(长沙)有限公司 | 一种超薄蓝宝石晶片的抛光工艺 |
CN106878912A (zh) * | 2017-03-03 | 2017-06-20 | 瑞声科技(新加坡)有限公司 | 电容式麦克风半成品的氧化层粗糙面平坦化的方法 |
CN107052984A (zh) * | 2017-06-14 | 2017-08-18 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 化学机械平坦化工艺中晶圆边缘区域平整度优化方法 |
CN107378747B (zh) * | 2017-07-11 | 2019-04-02 | 天津华海清科机电科技有限公司 | 用于mems器件的化学机械抛光工艺 |
US10636673B2 (en) * | 2017-09-28 | 2020-04-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor device structure |
CN108747606A (zh) * | 2018-06-16 | 2018-11-06 | 佛山市同鑫智能装备科技有限公司 | 一种不锈钢管加工工艺抛光方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW586157B (en) * | 2000-04-13 | 2004-05-01 | Showa Denko Kk | Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same |
JP3916375B2 (ja) * | 2000-06-02 | 2007-05-16 | 株式会社荏原製作所 | ポリッシング方法および装置 |
CN100400234C (zh) * | 2006-04-19 | 2008-07-09 | 山东大学 | 大直径高硬度6H-SiC单晶片的表面抛光方法 |
CN101428404A (zh) * | 2008-12-22 | 2009-05-13 | 南京航空航天大学 | 固结磨料研磨抛光垫及其制备方法 |
CN101817172B (zh) * | 2010-04-12 | 2012-01-25 | 南京航空航天大学 | 基于热引发固化的固结磨料研磨抛光垫及其制备方法 |
CN102172859B (zh) * | 2011-02-23 | 2012-10-31 | 南京航空航天大学 | 基于固结磨料的超薄平面玻璃的加工方法 |
CN103252708B (zh) * | 2013-05-29 | 2016-01-06 | 南京航空航天大学 | 基于固结磨料抛光垫的蓝宝石衬底的超精密加工方法 |
CN104157551B (zh) * | 2014-07-31 | 2017-01-25 | 华进半导体封装先导技术研发中心有限公司 | 键合前进行基板表面预处理的方法 |
-
2016
- 2016-07-11 CN CN201610540682.4A patent/CN106115612B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN106115612A (zh) | 2016-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106115612B (zh) | 一种晶圆平坦化方法 | |
JP6799000B2 (ja) | カチオン性ポリマー添加剤を含む研磨組成物 | |
KR102289577B1 (ko) | 혼합된 연마제 연마 조성물 | |
KR100393368B1 (ko) | Cmp 연마 방법 및 반도체 제조 장치 | |
KR20060041220A (ko) | 화학 기계적 연마를 위한 마모 입자 | |
CN102201337B (zh) | 对包含多晶硅以及氧化硅和氮化硅中的至少一种的基片进行抛光的方法 | |
KR101672809B1 (ko) | 실리콘 옥사이드 제거 증강에 적절한 연마 조성물을 사용한 기판의 화학 기계적 연마방법 | |
KR20130066561A (ko) | 구리 웨이퍼 폴리싱의 화학적 평탄화 | |
CN104802071A (zh) | 化学机械抛光方法 | |
CN104802068A (zh) | 化学机械抛光方法 | |
US7696095B2 (en) | Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide | |
US20100240283A1 (en) | Method of Chemical Mechanical Polishing | |
CN1981990A (zh) | 化学机械抛光研磨垫 | |
CN103943491B (zh) | 在转接板工艺中采用cmp对基板表面进行平坦化的方法 | |
CN102201338B (zh) | 对包含多晶硅以及氧化硅和氮化硅中的至少一种的基片抛光的方法 | |
US6391779B1 (en) | Planarization process | |
CN103943558B (zh) | 采用cmp对以聚合物为介质层的大马士革工艺中铜沉积后的表面进行平坦化的方法 | |
US20190358771A1 (en) | Conditioning wheel for polishing pads | |
KR20050107760A (ko) | 웨이퍼 연마 및 패드 컨디셔닝 방법 | |
CN100526017C (zh) | 化学机械研磨装置及其研磨垫的调节方法 | |
CN107578996B (zh) | 一种三维存储器及其平坦化方法 | |
CN103943557B (zh) | 利用cmp对重布线层中聚合物介质层表面进行平坦化的方法 | |
US20240181596A1 (en) | Micro-layer cmp polishing subpad | |
US20240181597A1 (en) | Dual-layer cmp polishing subpad | |
JP2005260185A (ja) | 研磨パッド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200813 Address after: 101, 2 / F, building 2, No. 1, third Taihe street, Beijing Economic and Technological Development Zone, Daxing District, Beijing 100176 Patentee after: Beijing ShuoKe precision electronic equipment Co.,Ltd. Address before: 100176, No. 1, Tai Street, Beijing economic and Technological Development Zone, Daxing District, Beijing Patentee before: THE 45TH Research Institute OF CETC |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 100176 101, floor 2, building 2, No. 1, Taihe Third Street, economic and Technological Development Zone, Daxing District, Beijing Patentee after: Beijing Jingyi Precision Technology Co.,Ltd. Address before: 100176 Room 101, floor 2, building 2, No. 1, Taihe 3rd Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee before: Beijing ShuoKe precision electronic equipment Co.,Ltd. |