CN106099353B - A kind of broadband millimeter-wave antenna array - Google Patents
A kind of broadband millimeter-wave antenna array Download PDFInfo
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- CN106099353B CN106099353B CN201610630537.5A CN201610630537A CN106099353B CN 106099353 B CN106099353 B CN 106099353B CN 201610630537 A CN201610630537 A CN 201610630537A CN 106099353 B CN106099353 B CN 106099353B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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Abstract
The invention discloses a kind of broadband millimeter-wave antenna array, including the first and second radiating element, excitation port, the first and second converter, asymmetric T-type power divider, Y type power dividers, the first, second and third metallic vias, perceptual windows；First and second radiating element is printed on substrate front side, and excitation port is etched in substrate back；First converter is located at behind 50 ohm of coplanar waveguide transmission lines；Second converter is located at before the first radiating element；Asymmetric T-type power divider is located at behind the first converter；First metallic vias is at feed and the first converter both ends are formed with two rows of vias；Second metallic vias is located at behind asymmetric T-type power divider；Third metallic vias is located at behind the second metallic vias；Y types power divider is behind third metallic vias；Perceptual window is located at behind Y type power dividers.Structure of the invention is compact, size is small, characteristic is good, while the problems such as realize wide bandwidth, high-gain.
Description
Technical field
The present invention relates to the technical field of millimeter wave antenna and array antenna, a kind of small sized wide-band high-gain is referred in particular to
Broadband millimeter-wave antenna array.
Background technology
Millimeter wave refers to that wave-length coverage is the electromagnetic wave of 1mm-10mm, and corresponding frequency is in 30GHz-300GHz.Closely
Nian Lai, due to the present situation that frequency spectrum resource is crowded, and to high-speed communication demand sustainable growth, millimeter wave field has become the world
Electromagnetic spectrum the Study on Resources, the extremely active field developed and utilized,.Millimeter wave frequency band possesses a large amount of continuous
Frequency spectrum resource, the realization for ultrahigh speed broadband wireless communications provide possibility.
2010, millimeter wave National Key Laboratory of Southeast China University proposed the nearly telecommunication standards Q- of development China's millimeter wave
(Q indicates that the Q- wave bands in 40~50GHz, LINKPAN expressions can both support short distance high speed covering (PAN), and also might be used to LINKPAN
Support long distance high-speed transfer (LINK)), and conduct a research in the same year.In December, 2013, Ministry of Industry and Information issue 40~50GHz frequencies respectively
The notice of point-to-point wireless access system and mobile service middle width strip wireless access system frequency usage matters in section fixed service.
Short distance high rate communication (PAN) is assigned with 5.9GHz (42.3GHz-47GHz, 47.2GHz-48.4GHz), the movement in frequency range
Plan of operation is used for broadband wireless access system, and remote high rate communication (LINK) is assigned with 3.6GHz (40.5GHz-
42.3GHz, 48.4GHz-50.2GHz), the fixed service planning in frequency range is used for point-to-point wireless access system.These show
The millimetre-wave attenuator technology in China will be unfolded in Q- wave bands.
With the fast development of millimeter wave wireless communication, many researchs focus on the width for how realizing millimeter wave antenna
In bandization.In the document that many millimeter wave antennas are studied and are designed, SIW (substrate integration wave-guide), multi-layer PCB (printed circuit
Plate), LTCC (low temperature charcoal burn ceramics), the technologies such as MEMS (MEMS) are mentioned and use.It is free due to 60GHz frequency ranges
Open, the Antenna Design of quite a few document is mainly applied to the frequency range, and applies the millimeter wave antenna in Q- wave bands
Article is then relatively smaller very much.
It in existing millimeter wave antenna, is mostly designed using micro-strip paster antenna, and it includes the feedback of L-shaped probe to use
The technologies such as electricity, U-lag patch, back cavity structure, aperture-coupled widen frequency band, in order to realize these wideband structurals, wherein
Most of design uses LTCC Technology (LTCC) to meet the multi-layer structure design needs of antenna, hence it is evident that increases
Production cost.
Slot antenna array is another millimeter wave antenna design scheme, mostly uses printed-board technology making, cost
It is relatively low, but bandwidth relative narrower, the requirement of broadband application cannot be met.In addition, the antenna of some other types is also designed
In millimeter wave frequency band, such as yagi aerial, dipole antenna, grid antenna, helical antenna etc..These antenna has broadband special
Property, but still structure is relative complex, is not easy to mass produce.
The present invention is designed using micro-strip paster antenna, can be realized on single-layer printed circuit plate (PCB).In impedance
In terms of matching, parasitic patch and perceptual window are also introduced, multiple modes of resonance are introduced when available, and then improve impedance
Match, to achieve the purpose that wide impedance bandwidth.Realize that the wide bandwidth of four element antenna battle arrays, high gain, size is small, can carry out simultaneously
The characteristics such as individually controllable.
Invention content
It is an object of the invention to the deficiencies in the prior art and disadvantage, propose a kind of broadband millimeter of small sized wide-band high-gain
Wave antenna battle array, the antenna structure is compact, size is small, characteristic is good, while the problems such as realize wide bandwidth, high-gain, has controllable
The design requirement of the communication terminal antenna system of performance is suitble to be integrated into terminal device system.
To achieve the above object, technical solution provided by the present invention is：A kind of broadband millimeter-wave antenna array, includes two
A different radiating element, respectively the first radiating element and the second radiating element and excitation port, the first converter,
Two converters, asymmetric T-type power divider, Y types power divider, the first metallic vias, the second metallic vias, third metal
Via, perceptual window；First radiating element and the second radiating element are printed on the front of substrate, first radiating element,
Second radiating element is rectangular patch unit, which is placed in the both sides of the first radiating element radiating side；It is described to swash
Port is encouraged by 50 ohm of co-planar waveguide direct feed, is etched in the back side of substrate；First converter arrives for co-planar waveguide
The transferring structure of substrate integration wave-guide is located at behind 50 ohm of coplanar waveguide transmission lines；Second converter is substrate collection
At the transferring structure of waveguide to micro-strip, it is located at before the first radiating element；The asymmetry T-type power divider is located at first
Behind converter, power can be distributed to two output ends, but have phase difference between output end；First metallic vias is being presented
At electricity and the first converter both ends are formed with two rows of vias, the generation for inhibiting surface wave at feed；The second metal mistake
Hole is located at behind asymmetric T-type power divider, two rows of vias is formed, for generating phase difference；Third metallic vias position
Behind the second metallic vias, two rows of vias are formed, for guiding and transmitting energy；The Y types power divider is in third gold
Belong to behind via, power can be distributed to two output ends；The perception window is located at behind Y type power dividers, in third
On the basis of metallic vias, four metallic vias are added, positioned at the inside for being drained through hole outside, are used for impedance matching.
Compared with prior art, the present invention having the following advantages that and advantageous effect：
1, compared with existing millimeter wave antenna battle array, present invention introduces the different microband paste radiating elements of two panels, and
Perceptual window effectively increases impedance bandwidth, and realizes the individually controllable of resonance point.Suitably adjust the ruler of chip unit
The via distance of very little, patch distance between commutator segments and perceptual window, so that it may to obtain good impedance bandwidth.That is, the design
Impedance bandwidth can be independently adjustable.
2, compared with existing millimeter wave antenna battle array, invention introduces medium integrated waveguide (SIW) structure, this structures
The energy loss that feeding network can be reduced, transmits energy to antenna as far as possible, to improve the radiation efficiency and peak of antenna
It is worth gain.
3, compared with existing millimeter wave antenna battle array, the present invention is only made of single-layer printed circuit plate, has broader resistance
Anti- bandwidth, simpler structure, suitable for various communication terminal device systems.
Description of the drawings
Fig. 1 is the front schematic view of double resonance solitary parasitism patch antenna element.
Fig. 2 is the S11 simulation result diagrams of double resonance solitary parasitism patch antenna element.
Fig. 3 is the front schematic view of 4 yuan of antenna arrays of double resonance solitary parasitism patch.
Fig. 4 is the S11 simulation result diagrams of 4 yuan of antenna arrays of double resonance solitary parasitism patch.
Fig. 5 is the front schematic view of the antenna element of three resonance solitary parasitism patches.
Fig. 6 is the front schematic view of the antenna element of the double parasitic patch of three resonance.
Fig. 7 is the S11 simulation result diagrams of three resonator antenna elements.
Fig. 8 is the positive and negative schematic diagram of 4 yuan of antenna arrays of three resonance solitary parasitism patches.
Fig. 9 is the S parameter simulation result diagram of 4 yuan of antenna arrays of three resonance solitary parasitism patches.
Figure 10 is the positive and negative schematic diagram of 4 yuan of antenna arrays of the double parasitic patch of three resonance.
Figure 11 is the S parameter simulation result diagram of 4 yuan of antenna arrays of the double parasitic patch of three resonance.
Specific implementation mode
The present invention is further explained in the light of specific embodiments.
If Fig. 1, Fig. 5 and Fig. 6 show antenna element, Fig. 3, Fig. 8 and Figure 10 show the corresponding 4 yuan of antennas of unit
Battle array.
Antenna element is analyzed first, and Fig. 1, Fig. 5, Fig. 6 include the different radiating element of two parts, the respectively first radiation
Unit 1 and the second radiating element 2 and the second converter 3, third metallic vias 4 further include perceptual window 11, Fig. 6 in Fig. 5
In, the second radiating element 2 increases to two pieces.
Fig. 3, Fig. 8 and Figure 10 show the corresponding 4 yuan of antenna arrays of unit, and each antenna array is in addition to including 4 correspondences
Antenna element outside, also excitation port 10, the first converter 9, asymmetric T-type power divider 8, Y types power divider 5,
First metallic vias 7, the second metallic vias 6.
First radiating element, 1 and second radiating element 2 is printed on the front of substrate, first radiating element 1, second
Radiating element 2 is rectangular patch unit, and the second radiating element unit 2 is placed in the both sides of 1 radiating side of the first radiating element；It is described to swash
Port 10 is encouraged by 50 ohm of co-planar waveguide direct feed, is etched in the back side of substrate；First converter 9 is co-planar waveguide
To the transferring structure of substrate integration wave-guide, it is located at behind 50 ohm of coplanar waveguide transmission lines；Second converter 3 is substrate
Integrated waveguide is located to the transferring structure of micro-strip before the first radiating element 1；The asymmetry T-type power divider 8 is located at
Behind first converter 9, power can be distributed to two output ends, but have phase difference between output end.The first metal mistake
Hole 7 is at feed and 9 both ends of the first converter are formed with two rows of vias, the generation for inhibiting surface wave at feed；Described
Two metallic vias 6 are located at behind asymmetric T-type power divider 8, two rows of vias are formed, for generating phase difference, in addition not right
The phase difference for claiming T-type power divider 8, can make the output port phase at both ends substantially remain in 180 degree, i.e. anti-phase output；Institute
It states third metallic vias 4 to be located at behind the second metallic vias 6, two rows of vias is formed, for guiding and transmitting energy；The Y types
Power can be distributed to two output ends by power divider 5 behind third metallic vias 4；The perception window 11 is located at Y types
Behind power divider 5, on the basis of third metallic vias 4, four metallic vias are added, positioned at being drained through in hole outside
Portion is used for impedance matching.
By patch performance and the collective effect of perceptual window, three resonance points are generated at antenna element S11 curves, from
And the impedance bandwidth of antenna is improved, relative bandwidth reaches 16.2%.
As shown in Fig. 2, first resonance point 21 in figure is mainly controlled by the first radiating element 1, it is single to adjust the first radiation
The size of member 1, so that it may to move resonance point 21；Second resonance point 22 is generated by the second radiating element 2, and it is single to adjust the second radiation
The size of member 2, so that it may to move resonance point 22.Fig. 3 is the positive and anti-of 4 element antenna battle arrays corresponding to the antenna element of Fig. 2
Face, Fig. 4 are the S11 curves of antenna shown in Fig. 3, and the value of S11 is both less than -15dB in entire working frequency range.
As shown in fig. 7, first resonance point 71 in figure is mainly controlled by the first radiating element 1, it is single to adjust the first radiation
The size of member 1, so that it may to move resonance point 71；Second resonance point 72 is made jointly by perceptual window 11 and the first radiating element 1
With generation, it is contemplated that adjust the first radiating element 1, resonance point 71 can move, so only adjusting 11 via of perceptual window here
Distance, so that it may to move resonance point 72；Third resonance point 73 is mainly controlled by the second radiating element 2, adjusts the second radiation
2 size of unit, so that it may to move resonance point 73, compare Fig. 5 and Fig. 6, the quantity of the second radiating element 2 of Fig. 6 is 2 times of Fig. 5,
The coupling of third mode of resonance can be made more preferable in this way, as shown in Figure 7, the third resonance point of solid line is reached than the energy of dotted line
The S11 value smallers arrived.
Fig. 8 is the obverse and reverse of 4 element antenna battle arrays corresponding to the antenna element of Fig. 5, and Fig. 9 is antenna shown in Fig. 8
S11 curves, the value of S11 is both less than -13dB in entire working frequency range, and the antenna array of -10dB relative impedances bandwidth ratio Fig. 3 is high
1% or so.
Figure 10 is the obverse and reverse of 4 element antenna battle arrays corresponding to the antenna element of Fig. 6, and Figure 11 is antenna shown in Figure 10
S11 curves, in entire working frequency range the value of S11 be both less than -13dB.The antenna array of -10dB relative impedances bandwidth ratio Fig. 3 is wanted
It is high by 3% or so, be Fig. 3, bandwidth is widest in tri- antenna arrays of Fig. 8 and Figure 10.
The examples of implementation of the above are only the preferred embodiments of the invention, and the implementation model of the present invention is not limited with this
It encloses, therefore changes made by all shapes according to the present invention, principle, should all cover within the scope of the present invention.
Claims (1)
1. a kind of broadband millimeter-wave antenna array, it is characterised in that：Include that there are two different radiating elements, the respectively first radiation
Unit and the second radiating element and excitation port, the first converter, the second converter, asymmetric T-type power divider, Y types
Power divider, the first metallic vias, the second metallic vias, third metallic vias, perceptual window；First radiating element and
Second radiating element is printed on the front of substrate, and first radiating element, the second radiating element are rectangular patch unit, this second
Radiating element is placed in the both sides of the first radiating element radiating side；The excitation port by 50 ohm of co-planar waveguide direct feed,
It is etched in the back side of substrate；First converter is transferring structure of the co-planar waveguide to substrate integration wave-guide, is located at 50 ohm
Behind coplanar waveguide transmission line；Second converter is transferring structure of the substrate integration wave-guide to micro-strip, is located at the first spoke
It penetrates before unit；The asymmetry T-type power divider is located at behind the first converter, and power can be distributed to two outputs
End, but have phase difference between output end；First metallic vias is formed with two and is drained through at feed with the first converter both ends
Hole, the generation for inhibiting surface wave at feed；Second metallic vias is located at behind asymmetric T-type power divider, shape
At two rows of vias, for generating phase difference；The third metallic vias is located at behind the second metallic vias, forms two rows of vias,
For guiding and transmitting energy；Power can be distributed to two outputs by the Y types power divider behind third metallic vias
End；The perception window is located at behind Y type power dividers, on the basis of third metallic vias, adds four metal mistakes
Hole is used for impedance matching positioned at the inside for being drained through hole outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610630537.5A CN106099353B (en) | 2016-08-03 | 2016-08-03 | A kind of broadband millimeter-wave antenna array |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610630537.5A CN106099353B (en) | 2016-08-03 | 2016-08-03 | A kind of broadband millimeter-wave antenna array |
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| Publication Number | Publication Date |
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| CN106099353A CN106099353A (en) | 2016-11-09 |
| CN106099353B true CN106099353B (en) | 2018-10-30 |
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| CN106356622B (en) * | 2016-11-25 | 2019-01-15 | 南京理工大学 | High-gain dual-frequency double-circle polarization Shared aperture planar array antenna |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361167A (en) * | 2011-10-08 | 2012-02-22 | 东南大学 | Vertically polarized omnidirectional printing filtering antenna |
| CN104092012A (en) * | 2014-07-16 | 2014-10-08 | 江苏中兴微通信息科技有限公司 | Q-band superspeed wireless local area network indoor access antenna |
| CN104577353A (en) * | 2015-01-15 | 2015-04-29 | 哈尔滨工业大学 | X-band substrate integrated waveguide four-element array antenna |
| CN205900782U (en) * | 2016-08-03 | 2017-01-18 | 华南理工大学 | Broadband millimeter wave antenna battle array |
-
2016
- 2016-08-03 CN CN201610630537.5A patent/CN106099353B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361167A (en) * | 2011-10-08 | 2012-02-22 | 东南大学 | Vertically polarized omnidirectional printing filtering antenna |
| CN104092012A (en) * | 2014-07-16 | 2014-10-08 | 江苏中兴微通信息科技有限公司 | Q-band superspeed wireless local area network indoor access antenna |
| CN104577353A (en) * | 2015-01-15 | 2015-04-29 | 哈尔滨工业大学 | X-band substrate integrated waveguide four-element array antenna |
| CN205900782U (en) * | 2016-08-03 | 2017-01-18 | 华南理工大学 | Broadband millimeter wave antenna battle array |
Non-Patent Citations (1)
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| 《A Q-band wideband Cavity-backed patch antenna》;Jia-Tian Weng;《ICMMT 2016》;20160608;全文 * |
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Granted publication date: 20181030 Termination date: 20210803 |