CN106099297A - The double probe power combining structures of waveguide and assembly thereof - Google Patents

The double probe power combining structures of waveguide and assembly thereof Download PDF

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Publication number
CN106099297A
CN106099297A CN201610601229.XA CN201610601229A CN106099297A CN 106099297 A CN106099297 A CN 106099297A CN 201610601229 A CN201610601229 A CN 201610601229A CN 106099297 A CN106099297 A CN 106099297A
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CN
China
Prior art keywords
probe
waveguide
power
double
amplifying unit
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Pending
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CN201610601229.XA
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Chinese (zh)
Inventor
石磊
张健
徐晟�
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Shanghai Radio Equipment Research Institute
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Shanghai Radio Equipment Research Institute
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Priority to CN201610601229.XA priority Critical patent/CN106099297A/en
Publication of CN106099297A publication Critical patent/CN106099297A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports

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  • Microwave Amplifiers (AREA)

Abstract

The invention discloses the double probe power combining structures of a kind of waveguide, comprise: waveguide;It is symmetricly set on the first probe and second probe of two E face wave guide walls of waveguide;The first described probe and the second probe portion are through described E face wave guide wall and perpendicular with described E face wave guide wall;Being arranged in an axially parallel mode of axial and second probe of the first described probe;The first described probe and the coupling of the second probe input or output;The surface configuration surrounding medium that the first described probe and the second probe contact with E face wave guide wall.The invention also discloses the double probe power combing assembly of a kind of waveguide.The present invention may be used for various frequency range high power solid state and attacks and put power combing, has preferable practicality and application mode.

Description

The double probe power combining structures of waveguide and assembly thereof
Technical field
The present invention relates to microwave circuits field, be specifically related to the double probe power combining structures of a kind of waveguide and group thereof Part.
Background technology
The purpose of power combing is to improve power amplifier output, and several small-power amplifying units are synthesized output very Big emission system, thus meet complete machine application demand.
The double probe coupled modes of waveguide are to develop from waveguide switch, and the double probe synthesis mode of waveguide is by waveguide Inserting two probes and carry out one-to-two waveguide conversion, probe mostly is micro-strip form;By electromagnetic-field simulation, adjust coaxial probe Length and position, can make two waveguide probe coupled powers equal, for the half of waveguide input power, compare and be suitable as power Unit primary synthesizes, and can substitute micro-strip merit well and divide/synthesis mode.
In view of the actual application of power combing, need to combine the factor such as prime power synthesis mode, amplifying unit structure, to base This synthesis mode is optimized and adjusts, and reaches to make full use of space layout, can synthesize again power, make synthesis mode abundant Adapt to modular construction.
Summary of the invention
It is an object of the invention to provide the double probe power combining structures of a kind of waveguide and assembly thereof, may be used for various frequency Section high power solid state is attacked and is put power combing, has preferable practicality and application mode.
In order to achieve the above object, the present invention is achieved through the following technical solutions: a kind of waveguide double probe power combing knot Structure, is characterized in, comprises:
Waveguide;
It is symmetricly set on the first probe and second probe of two E face wave guide walls of waveguide;
The first described probe and the second probe portion are through described E face wave guide wall, and hang down mutually with described E face wave guide wall Directly;
Being arranged in an axially parallel mode of axial and second probe of the first described probe;
The first described probe and the coupling of the second probe input or output;
The surface configuration surrounding medium that the first described probe and the second probe contact with E face wave guide wall.
Described waveguide uses metal rectangular cavity.
The first described probe and the second probe are copper conductor.
The first described probe and the outer surface of the second probe are gold-plated.
Described surrounding medium is polytetrafluoroethylmaterial material.
The central axis of the first described probe is to distance is waveguide wavelength 1/4th of waveguide short face;Described The central axis of the second probe is to distance is waveguide wavelength 1/4th of waveguide short face.
The coupled power of the first described probe and the coupled power of the second probe are equal.
Coupled power is waveguide input power 1/2nd of the first described probe;The coupling of the second described probe Power is 1/2nd of waveguide input power;When input signal inputs from the first probe and the second probe simultaneously, waveguide Output increasing is twice.
The double probe power combining structures of described waveguide is when power combing, and the first described probe and the second probe divide The most integrated with amplifying unit, described amplifying unit is arranged on the outside of described E face wave guide wall, and the first described probe is configured For the input port of amplifying unit, the second described probe is configured to the output port of amplifying unit;Or described second Probe is configured to the input port of amplifying unit, and the first described probe is configured to the output port of amplifying unit.
The double probe power combing assembly of a kind of waveguide, is characterized in, comprises the double probe power combing of a pair above-mentioned waveguide Structure, also comprises the first amplifying unit and the second amplifying unit, is separately positioned on the E of the double probe power combining structures of a pair waveguide Outside the wave guide wall of face, the double probe power combining structures of one of them waveguide is configured to signal merit branch and divides, and its outfan is respectively Connect input and the input of the second amplifying unit of the first amplifying unit;The double probe power combining structures quilt of another waveguide Being configured to power combing part, its input connects outfan and the output of the second amplifying unit of the first amplifying unit respectively End, by the two-in-one output of output of the first amplifying unit and the second amplifying unit.
The double probe power combining structures of one waveguide of the present invention and assembly thereof compared with prior art have the advantage that this The topology layout of invention is symmetrical, and compared with probes double with the waveguide of traditional E face, the double probe of waveguide uses coaxial probe to replace micro-strip to visit Pin, and respectively from the coupling input of two wave guide walls in E face or output, it is simple to the stereoscopic arrangement between amplifying unit and exchange, and puts Big unit combines, and may be used for various frequency range high power solid state power amplifier power combing, has preferable practicality and application mode.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of the double probe model of a kind of waveguide of the present invention;
Fig. 2 is the sectional view of the double probe model of a kind of waveguide of the present invention;
Fig. 3 is the schematic diagram of amplifying unit;
Fig. 4 is amplifying unit and the integrated schematic diagram of coaxial probe;;
Fig. 5 is the schematic cross-section of the double probe power combing assembly of a kind of waveguide of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the present invention is further elaborated.
As shown in FIG. 1 to 3, the double probe power combining structures 10 of a kind of waveguide, comprise: waveguide 100;It is symmetricly set on ripple First probe 200 and the second probe 300 of two the E face wave guide walls (101,102) led;The first described probe 200 and second Probe 300 partially passes through described E face wave guide wall (101,102), and perpendicular with described E face wave guide wall (101,102);Described The first probe 200 axially and being arranged in an axially parallel mode of the second probe 300;The first described probe 200 and the second probe 300 Coupling input or output, the first probe 200 is referred to as coaxial double probe with the second probe 300;The first described probe 200 and second The surface configuration surrounding medium 400 that probe 300 contacts with E face wave guide wall (101,102).
In the present embodiment, it is preferred that be modeled emulation by HFSS or CST software, waveguide 100 uses metal rectangular Cavity;The first described probe 200 and the second probe 300 are copper conductor, it is preferred that gold-plated at copper conductor outer surface;Described Surrounding medium 400 be polytetrafluoroethylmaterial material.
In the present embodiment, as it is shown in figure 1, it is preferred that the central axis of the first described probe 200 is to waveguide short face Distance L of 103 is 1/4th of waveguide wavelength;The central axis of the second described probe 300 to waveguide short face 103 away from From for 1/4th of waveguide wavelength;The relative another side in waveguide short face 103 is waveguide port 104.
In the present embodiment, it is preferred that as in figure 2 it is shown, by electromagnetic-field simulation, symmetrical adjust the first probe 200 and the The length of two probes 300 and position, make coupled power and the coupled power phase of the second probe 300 of the first described probe 200 Deng;Preferably, coupled power is waveguide input power 1/2nd of the first described probe 200;The second described probe The coupled power of 300 is 1/2nd of waveguide input power;When input signal is simultaneously from the first probe 200 and the second probe During 300 input, the output increasing of waveguide port 104 is twice;Specifically, insert waveguide coupled signal by coaxial probe, Realizing waveguide-coaxial transition, each probe degree of coupling is 3dB, will waveguide input power halve;Otherwise, signal from The input of two coaxial port (105,106, corresponding first probe 200 and the second probe 300 respectively), can increase signal power One times, i.e. power improves 3dB.
In the present embodiment, as it is shown on figure 3, amplifying unit 20 comprises input port 201 and output port 202, when described The double probe power combining structures of waveguide when power combing, need to carry out integrated with amplifying unit, now needing can be first First probe 200 and the second probe 300 and amplifying unit are carried out integrated, as shown in Figure 4, the first probe 200 and input port 201 is integrated, and the second probe 300 is integrated with output port 202, and the first probe 200 and the second probe 300 are respectively by the side of welding Formula is connected with the microstrip line within amplifying unit 20, it is preferred that use scolding tin welding.Or, in a further embodiment, first Probe 200 is integrated with output port 202, and the second probe 300 is integrated with input port 201.The double probe power of waveguide now closes Structure is become only to comprise waveguide and the through hole being arranged on two E face wave guide walls, for the first probe or the second probe being inserted i.e. Can.
As it is shown in figure 5, the double probe power combing assembly of a kind of waveguide, comprise the double probe power combining structures of a pair waveguide (10 ', 10 ", the double probe power combining structures of waveguide only comprises waveguide and the through hole being arranged on two E face wave guide walls), also wrap Containing the first amplifying unit 20 ' and the second amplifying unit 20 ", the double probe power combining structures 10 ' of one of them waveguide is configured to Signal merit branch divides, and its outfan connects input and second amplifying unit 20 of the first amplifying unit 20 ' respectively " input End;The double probe power combining structures 10 of another waveguide " it is configured to power combing part, its input connects first respectively and puts The outfan of big unit 20 ' and the second amplifying unit 20 " outfan, by the first amplifying unit 20 ' and the second amplifying unit 20 " The two-in-one output of output.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned Description is not considered as limitation of the present invention.After those skilled in the art have read foregoing, for the present invention's Multiple amendment and replacement all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (10)

1. the double probe power combining structures of waveguide, it is characterised in that comprise:
Waveguide;
It is symmetricly set on the first probe and second probe of two E face wave guide walls of waveguide;
The first described probe and the second probe portion are through described E face wave guide wall and perpendicular with described E face wave guide wall;
Being arranged in an axially parallel mode of axial and second probe of the first described probe;
The first described probe and the coupling of the second probe input or output;
The surface configuration surrounding medium that the first described probe and the second probe contact with E face wave guide wall.
2. the double probe power combining structures of waveguide as claimed in claim 1, it is characterised in that described waveguide uses metal square Shape cavity.
3. the double probe power combining structures of waveguide as claimed in claim 1, it is characterised in that described the first probe and second Probe is copper conductor.
4. the double probe power combining structures of waveguide as claimed in claim 1, it is characterised in that described the first probe and second The outer surface of probe is gold-plated.
5. the double probe power combining structures of waveguide as claimed in claim 1, it is characterised in that described surrounding medium is poly-four Fluoride material.
6. the double probe power combining structures of waveguide as claimed in claim 1, it is characterised in that the center of the first described probe Axis is to distance is waveguide wavelength 1/4th of waveguide short face;The central axis of the second described probe is to waveguide short The distance in face is 1/4th of waveguide wavelength.
7. the double probe power combining structures of waveguide as claimed in claim 1, it is characterised in that the coupling of the first described probe The coupled power of power and the second probe is equal.
8. the double probe power combining structures of waveguide as described in claim 1 or 7, it is characterised in that the first described probe Coupled power is 1/2nd of waveguide input power;Coupled power is waveguide input power two points of the second described probe One of;When input signal inputs from the first probe and the second probe simultaneously, the output increasing of waveguide is twice.
9. the double probe power combining structures of waveguide as claimed in claim 1, it is characterised in that the double probe power of described waveguide Composite structure when power combing, the first described probe and integrated with amplifying unit, the described respectively amplification of the second probe Unit is arranged on the outside of described E face wave guide wall, and the first described probe is configured to the input port of amplifying unit, described Second probe is configured to the output port of amplifying unit;Or the second described probe is configured to the input of amplifying unit Mouthful, the first described probe is configured to the output port of amplifying unit.
10. the double probe power combing assembly of waveguide, it is characterised in that comprise a pair such as claim 1~8 any one power The double probe power combining structures of waveguide described in profit requirement, also comprises the first amplifying unit and the second amplifying unit, is respectively provided with Outside the E face wave guide wall of the double probe power combining structures of a pair waveguide, the double probe power combining structures quilt of one of them waveguide Being configured to signal merit branch divide, its outfan connects input and the input of the second amplifying unit of the first amplifying unit respectively End;The double probe power combining structures of another waveguide is configured to power combing part, and its input connects the first amplification respectively The outfan of unit and the outfan of the second amplifying unit, close the output two of the first amplifying unit and the second amplifying unit One output.
CN201610601229.XA 2016-07-27 2016-07-27 The double probe power combining structures of waveguide and assembly thereof Pending CN106099297A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106025473A (en) * 2014-04-04 2016-10-12 苏州灿勤通讯技术有限公司 Compact combiner for network communication

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050007211A1 (en) * 2001-06-01 2005-01-13 Rf Technologies Corporation Apparatus and method for in-process high power variable power division
TW201117462A (en) * 2009-11-12 2011-05-16 Wistron Neweb Corp Waveguide orthomode transducer
CN105390787A (en) * 2015-12-16 2016-03-09 中国电子科技集团公司第四十一研究所 Novel composite function gradient millimeter wave waveguide power distribution synthesizer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050007211A1 (en) * 2001-06-01 2005-01-13 Rf Technologies Corporation Apparatus and method for in-process high power variable power division
TW201117462A (en) * 2009-11-12 2011-05-16 Wistron Neweb Corp Waveguide orthomode transducer
CN105390787A (en) * 2015-12-16 2016-03-09 中国电子科技集团公司第四十一研究所 Novel composite function gradient millimeter wave waveguide power distribution synthesizer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
钱志方等: "波导的探针激励研究", 《电子器件》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106025473A (en) * 2014-04-04 2016-10-12 苏州灿勤通讯技术有限公司 Compact combiner for network communication
CN106025473B (en) * 2014-04-04 2019-06-11 苏州灿勤通讯技术有限公司 Compact combiner for network communication

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Application publication date: 20161109

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