CN106098891A - The manufacture method of light-emitting diode chip for backlight unit in a kind of Sapphire Substrate - Google Patents
The manufacture method of light-emitting diode chip for backlight unit in a kind of Sapphire Substrate Download PDFInfo
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- CN106098891A CN106098891A CN201210485520.7A CN201210485520A CN106098891A CN 106098891 A CN106098891 A CN 106098891A CN 201210485520 A CN201210485520 A CN 201210485520A CN 106098891 A CN106098891 A CN 106098891A
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- emitting diode
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Abstract
The present invention relates to the manufacture method of light-emitting diode chip for backlight unit in a kind of Sapphire Substrate.Basic feature includes with lower part: 1. using silicon dioxide (or other materials) as sacrifice layer, fix the distance between the transparency electrode of light emitting diode and luminous platform edges.2. this structure is formed at the edge of chip light emitting platform.3. adopt and process light emitting diode in this way, the processing result of product can be made to reach higher precision and repeatability, improve production efficiency while simplifying photoetching process check and correction process.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to the preparation method of a kind of light-emitting diode chip for backlight unit on a sapphire substrate.
Background technology
Light emitting diode (LED) is a kind of solid state light emitters converting electrical energy into luminous energy, and due to it, to have the life-span long, and volume is little, vibration strength is good, economize on electricity, efficiently, response time is fast, the advantages such as driving voltage is low, environmental protection, and it is widely used in instruction, display, decoration, the numerous areas such as illumination, become an indispensable part in our life.Core technology for the light emitting diode in above-mentioned field is chip fabrication techniques.
The present invention relates to the manufacturing technology of light-emitting diode chip for backlight unit, particularly in the growth chip of gallium nitride LED course of processing on a sapphire substrate, more accurately control the electrode distance to luminous mesa boundaries, reduce the required precision of photoetching para-position, meanwhile, subvertical mesa side walls is formed.
The manufacture method of the LED core on a sapphire substrate of original routine is (with reference to Fig. 1 and Fig. 2): 1. (such as Fig. 1 in the Sapphire Substrate that extension is crossed; shown in 101) light emitting diode construction on; pass through photoetching method; to need the luminous table top retained with photoresist or deielectric-coating (such as silicon dioxide etc.) or metal (such as nickel) covering protection live (such as Fig. 6, in traditional handicraft luminescence platform mask situation shown in 606).2. by the method (such as ICP or RIE) of dry etching, the top layer Al-Ca-In-N material corrosion in unprotected region is fallen. until eroding to N-type Al-Ca-In-N part (such as Fig. 1, shown in 107).3. forming layer of transparent electrode, material can be the light transmitting electro-conductive materials such as Ni/Au, ZnO, ITO.By the method for photoetching, the transparency electrode of the most luminous table top being kept here, remainder gets rid of (such as Fig. 1, shown in 106, and Fig. 2, shown in 206).4. make the n-electrode (Fig. 1,103 and Fig. 2, shown in 203) of diode and p-electrode (Fig. 1,105 and Fig. 2, shown in 205) by photoetching method.The most then in Cutting Road central authorities laser or diamond cutter scribing, more mechanically press off along Cutting Road front central authorities, form independent light-emitting diode chip for backlight unit.
Traditional handicraft has following limitation.1. as first step processing technique make with photoresist time, there is the domatic of a 10-30 degree side of luminous table top.Only deielectric-coating (such as silicon dioxide etc.) or metal can form the vertical sidewall close to 90 degree.2. transparency electrode preparation needs accurate photoetching para-position.Otherwise, stay the transparency electrode of luminous mesa side walls and can cause chip short circuit and the most luminous.Owing to the precision of litho machine limits, transparency electrode edge can not be too near to mesa edge.This distance typically smaller than 6um.And distance controlling is limited to the restriction of operative employee's skill and accuracy of machines.Owing to lithographic accuracy requires height, when second step para-position, usual operator takes a lot of time.Efficiency is much lower compared with other techniques.
In order to solve the limitation of above traditional handicraft, the present invention uses a kind of method former technique the first and second step merged.First, the chip of present invention process processing has subvertical sidewall.Secondly, in this technique, transparency electrode edge is insensitive to photoetching to the distance of luminous table top, can highly repeat.The most important thing is that this art lithography para-position tolerance is big, bit errors close to 3um (transparency electrode to Luminous platform identity distance from for 6um) can be allowed.Even if bit errors is big, do not result in side-wall metallic short circuit phenomenon yet.
Summary of the invention
It is an object of the invention to provide a kind of method for manufacturing light-emitting diode chip on a sapphire substrate, mainly solve a difficult problem for constant spacing between lumination of light emitting diode platform edges and transparency electrode edge, the method can be while minimizing photo-mask process be to the version time, processing result is made to reach higher precision and repeatability, improve the efficiency produced, and this technique achieves luminous mesa side walls close to vertically (as shown in Figure 4 and Figure 5).
The present invention uses silicon dioxide to make mask at luminous mesa edge, after completing dry etching, forms vertical sidewall.Luminous table top mid portion is transparency electrode (transparent electrode material can be Ni/Au, the material of the light transmitting electro-conductive such as ZnO, ITO), and is formed dry etching mask by photoresist.Transparency electrode edge is determined by the mask width of silicon dioxide with the spacing of luminous mesa edge.This silicon dioxide can be removed with chemical attack, forms the distance that height repeats.Owing to the mask width of silicon dioxide determines the spacing at transparency electrode edge and luminous mesa edge, as long as transparency electrode will be removed in stripping technology behind on the mask of silicon dioxide.Therefore, it can the half (as shown in Figure 6) of the mask width allowing transparency electrode mask error disposition to be silicon dioxide.
The present invention can be realized by following steps:
(1) before wafer carries out transparency electrode evaporation and luminous mesa etch, use the technique such as PECVD and photoetching, make the mask of silicon dioxide at crystal column surface.
(2) carrying out the dry lithography of luminous platform again, during photoetching, photoresist edge to be ensured will be within the width range of the mask of silicon dioxide.
(3) after carrying out dry etching, removing the mask of photoresist and silicon dioxide, the distance between so luminous platform and transparency electrode is exactly the width of the mask of silicon dioxide.
(4) make metal electrode, after completing the operations such as cutting and grinding, i.e. can get light emitting diode.
Described in step (1) is to use silicon dioxide as positioning strip but it also may use the materials such as Si3Nx.
Accompanying drawing explanation
Fig. 1, tradition blue green light LED Making programme schematic diagram (sectional side view)；
101: Sapphire Substrate, 102:N-GaN, 103:N routing electrode, 104:P-GaN, 105:P routing electrode, 106: transparency electrode, 107: luminous platform；
Fig. 2, tradition blue green light LED Making programme schematic diagram (top view)；
202:N-GaN, 203:N routing electrode, 204:P-GaN, 205:P routing electrode, 206: transparency electrode；
Fig. 3, the schematic diagram (Ni/Au stripping technology sectional side view) of manufacturing process of the present invention；
301: Sapphire Substrate, 302:N-GaN, 303:P-GaN, 304: silicon oxide mask, 305:Ni/Au transparency electrode, 306: photoresist mask；
Fig. 4, the schematic diagram (sectional side view before and after Ni/Au technique dry etching) of manufacturing process of the present invention；
401: Sapphire Substrate, 402:N-GaN, 403:P-GaN, 404: silicon oxide mask, 405: transparency electrode, 406: photoresist mask；
Fig. 5, silicon oxide mask position view (top view)；
501: luminous platform edges edge, 502: transparency electrode, 503: silicon oxide mask；
Fig. 6, traditional handicraft and present invention process luminescence platform manufacturing process main distinction schematic diagram；
601: Sapphire Substrate, 602:N-GaN, 603:P-GaN, 604: silicon oxide mask, 605:Ni/Au transparency electrode, 606: photoresist mask；
Fig. 7, the schematic diagram (profile on rear side of ITO technique dry etching) of manufacturing process of the present invention；
701: Sapphire Substrate, 702:N-GaN, 703:P-GaN, 704: silicon oxide mask, 705:ITO transparency electrode, 706: photoresist mask.
Detailed description of the invention
In order to the enforcement of the present invention is illustrated, below in conjunction with accompanying drawing, as a example by iii-nitride light emitting devices, illustrate the implementation process of this special construction.
Embodiment 1 (Ni/Au transparency electrode):
Acetone equal solvent is used to be carried out GaN crystal column surface processing, to ensure that the impurity that do not has that crystal column surface is clean pollutes, cleaned wafer uses the method for PECVD or electron beam evaporation in superficial growth layer of silicon dioxide, the thickness of growing silicon oxide can be adjusted according to practical situation, is typically greater thanAfter completing the deposition of silicon oxide, the method such as photoetching, corrosion of employing produces the mask of silicon dioxide (such as Fig. 3, shown in 304), so, the distance at chip light emitting platform edges edge and transparency electrode edge is just fixed up by the width of the mask of silicon dioxide.After the mask etch of silicon dioxide completes, photoresist mask is not removed, then the method using electron beam evaporation is deposited with one layer of the Ni/Au layer the thinnest transparency electrode as chip at crystal column surface, thickness is typically at hundreds of angstrom, after completing transparency electrode evaporation, make to remove with photoresist liquid, the photoresist of silicon oxide surface is removed, so evaporation metallic transparent electrode on photoresist surface is just stripped, and exposes silicon oxide positioning strip (as shown in Figure 3).Use the method platform for making etching mask of photoetching the most again; the edge of mask lithography glue to fall on silicon oxide positioning strip (such as Fig. 4; shown in 406); so; the when of can guarantee that dry etching luminescence platform; luminous platform surface is protected, in order to avoid occurring that luminous platform surface is etched, and the phenomenon that after causing processing, chip leaks electricity.After carrying out etching mask, carry out the corrosion of transparency electrode, will not be photo-etched the Ni/Au etching away of the position that glue is protected.Expose wafer GaN surface to carry out dry etching.Dry etching can use the methods such as ICP, RIE to carry out (as shown in Figure 4).
After luminous mesa etch completes, the mask of silicon dioxide can remove according to technological requirement or retain, and then removes photoresist etching mask.So processing of transparency electrode and luminous platform is basically completed.Next need metallic transparent electrode is annealed, make transparency electrode can have more preferable transmittance, typically under the atmosphere of air or oxygen, the environment of more than 300 DEG C is carried out anneal about 20 minutes.In order to protect the impact of chip from electrostatic, dust etc., we to make, at chip surface, the silicon oxide protecting film that one layer of hundreds to thousands angstrom is thick, and the mode of growth can be Pecvd or E-beam.The finally routing dish of our P/N electrode to be made, the method that can use electron beam evaporation, growth Cr/Au (or other materials), thickness has about 1 micron of thickness altogether.So wafer processing just completes, and the most again through operations such as grinding step, cutting action, test sortings, just completes the processing of chip.
Embodiment 2 (ito transparent electrode):
Acetone equal solvent is used to be carried out GaN crystal column surface processing, to ensure that the impurity that do not has that crystal column surface is clean pollutes, cleaned wafer uses the method for PECVD or electron beam evaporation in superficial growth layer of silicon dioxide, the thickness of growing silicon oxide can be adjusted according to practical situation, is typically greater thanAfter completing the deposition of silicon oxide, the method such as photoetching, corrosion of employing produces the mask of silicon dioxide, and so, the distance at chip light emitting platform edges edge and transparency electrode edge has just been fixed up (such as Fig. 7, shown in 704) by the width of the mask of silicon dioxide.After the mask etch of silicon dioxide completes, the method making deposited by electron beam evaporation, it is deposited with one layer of ito thin film, thickness typically existsAbove; evaporation process to be passed through suitable oxygen; and suitably heat, after being deposited with, the method platform for making etching mask of photoetching to be used; the edge of mask lithography glue to fall on silicon oxide positioning strip; so, the when of can guarantee that dry etching luminescence platform, luminous platform surface is protected; in order to avoid occurring that luminous platform surface is etched, the phenomenon that after causing processing, chip leaks electricity.After luminous mesa etch mask manufacture completes, ITO etching process to be carried out, use ITO corrosive liquid will there is no ito thin film etching away covered by photoresist (such as Fig. 7, shown in 705).Then carry out dry etching, the method typically taking ICP or RIE, remove and there is no GaN material covered by photoresist.
After luminous mesa etch completes, the mask of silicon dioxide can remove according to technological requirement or retain, then spends sol solution and remove photoresist mask, and the processing of such transparency electrode and luminescence platform is basically completed.Next ito transparent electrode is annealed by we, makes ito transparent electrode can have more preferable transmittance, typically under the atmosphere of air or high oxygen, carries out annealing about 20 minutes in the environment of more than 400 DEG C.In order to protect the impact of chip from electrostatic, dust etc., we to make, at chip surface, the silicon oxide protecting film that one layer of hundreds to thousands angstrom is thick, and the mode of growth can be Pecvd or E-beam.The finally routing dish of our P/N electrode to be made, the method that can use electron beam evaporation, growth Cr/Au (or other materials), thickness has about 1 micron of thickness altogether.So wafer processing just completes, and the most again through operations such as grinding step, cutting action, test sortings, just completes the processing of chip.
Claims (7)
1. the manufacture method of light-emitting diode chip for backlight unit in a Sapphire Substrate, it is characterised in that make with silicon dioxide
For positioning strip, the method for the spacing of fixing luminous platform and transparency electrode.
The manufacture method of light-emitting diode chip for backlight unit, dioxy in a kind of Sapphire Substrate the most as claimed in claim 1
The position of SiClx positioning strip is to exist in the most luminous platform edges position, chip local rather than cover whole
Individual chip or luminous platform.
The manufacture method of light-emitting diode chip for backlight unit in a kind of Sapphire Substrate the most as claimed in claim 1 or 2,
It is characterized in that silicon dioxide positioning strip is to be looped around at luminous platform edges, luminous platform and transparent electrical
Distance between pole is determined by the width of positioning strip completely, and the width of positioning strip is typically at 0 micron and 50
Between Wei meter.
The manufacture method of light-emitting diode chip for backlight unit in a kind of Sapphire Substrate the most as claimed in claim 1 or 2,
It is characterized in that after the making completing silicon dioxide positioning strip, by electron beam evaporation or thermal evaporation
Form transparency electrode metal level etc. method at chip surface, now use photoetching process, make photoresist cover
Cover on chip transparency electrode surface, and make photoresist edge be on silicon dioxide positioning strip, so only
Want photoresist edge within positioning strip width, after having will ensure that processing, luminous platform edges with
Transparency electrode Edge Distance immobilizes.
The manufacture method of light-emitting diode chip for backlight unit in a kind of Sapphire Substrate the most as claimed in claim 4, it is special
Levying and be, in the etching process of luminous platform, silicon dioxide positioning strip is as sacrifice layer and photoresist
Or other mask materials are together as the dry etching mask of luminous platform.
6. the manufacture method of light-emitting diode chip for backlight unit in a kind of Sapphire Substrate as described in claim 4 or 5,
It is characterized in that, after completing dry etching, remove photoresist, and use silicon dioxide etching liquid to remove
The silicon dioxide positioning strip of luminous platform edges, the most covered by photoresist be not corroded saturating
Prescribed electrode metal can peel off together with silicon oxide positioning strip, and then makes luminous platform and transparency electrode limit
Distance between edge is fixed.
7. the system of light-emitting diode chip for backlight unit in a kind of Sapphire Substrate as described in claim 1 to 6 any one
Make method, it is characterised in that light-emitting diode chip for backlight unit is gallium nitride series material.
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| CN201210485520.7A CN106098891A (en) | 2012-11-18 | 2012-11-18 | The manufacture method of light-emitting diode chip for backlight unit in a kind of Sapphire Substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491774A (en) * | 2019-08-19 | 2019-11-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of surface treatment method of Sapphire Substrate and its crucible used |
| CN111129165A (en) * | 2019-12-05 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Schottky diode and preparation method thereof |
-
2012
- 2012-11-18 CN CN201210485520.7A patent/CN106098891A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491774A (en) * | 2019-08-19 | 2019-11-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of surface treatment method of Sapphire Substrate and its crucible used |
| CN110491774B (en) * | 2019-08-19 | 2021-10-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Surface treatment method of sapphire substrate and crucible used by surface treatment method |
| CN111129165A (en) * | 2019-12-05 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Schottky diode and preparation method thereof |
| CN111129165B (en) * | 2019-12-05 | 2023-11-28 | 中国电子科技集团公司第十三研究所 | Schottky diode and preparation method thereof |
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Application publication date: 20161109 |