CN106094263B - 一种周期极化lnoi脊型波导及其制备方法 - Google Patents
一种周期极化lnoi脊型波导及其制备方法 Download PDFInfo
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- CN106094263B CN106094263B CN201610464736.3A CN201610464736A CN106094263B CN 106094263 B CN106094263 B CN 106094263B CN 201610464736 A CN201610464736 A CN 201610464736A CN 106094263 B CN106094263 B CN 106094263B
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- 238000002360 preparation method Methods 0.000 title claims description 14
- 239000010931 gold Substances 0.000 claims abstract description 78
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052737 gold Inorganic materials 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 229920002521 macromolecule Polymers 0.000 claims abstract description 30
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 26
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000009466 transformation Effects 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 230000009022 nonlinear effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 230000005622 photoelectricity Effects 0.000 abstract description 2
- 238000012827 research and development Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000005693 optoelectronics Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 208000032170 Congenital Abnormalities Diseases 0.000 description 1
- 206010010356 Congenital anomaly Diseases 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 230000007698 birth defect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
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Priority Applications (1)
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CN201610464736.3A CN106094263B (zh) | 2016-06-21 | 2016-06-21 | 一种周期极化lnoi脊型波导及其制备方法 |
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CN106094263A CN106094263A (zh) | 2016-11-09 |
CN106094263B true CN106094263B (zh) | 2018-11-13 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108241225A (zh) * | 2016-12-23 | 2018-07-03 | 天津领芯科技发展有限公司 | 一种低驱动电压铌酸锂电光调制器及其制造方法 |
CN107561817A (zh) * | 2017-10-13 | 2018-01-09 | 上海交通大学 | 铌酸锂薄膜纳米级周期性极化的方法 |
CN107505736B (zh) * | 2017-10-13 | 2019-11-08 | 上海交通大学 | 基于周期性极化铌酸锂脊型波导结构的电光偏振旋转器 |
CN109407208B (zh) * | 2018-12-13 | 2021-03-05 | 中国科学院半导体研究所 | 光耦合结构、***及光耦合结构的制备方法 |
CN110160984B (zh) * | 2019-01-08 | 2021-12-24 | 南开大学 | 一种基于超表面和铌酸锂混合结构的片上太赫兹传感增强器件 |
CN111864003B (zh) * | 2019-04-30 | 2022-07-05 | 山东大学 | 一种铌酸锂平面波导上的光电探测器及制备方法 |
CN110764188B (zh) * | 2019-10-23 | 2021-01-05 | 天津大学 | 一种铌酸锂脊型光波导的制备方法 |
CN110879439B (zh) * | 2019-12-10 | 2021-02-09 | 电子科技大学 | 一种周期性极化型铌酸锂薄膜光波导差频放大器 |
CN112013975A (zh) * | 2020-08-06 | 2020-12-01 | 济南量子技术研究院 | 一种小型化的上转换单光子探测器 |
CN111999959B (zh) * | 2020-08-06 | 2022-07-15 | 济南量子技术研究院 | 基于周期极化铌酸锂薄膜波导的窄带宽纠缠光子对产生装置 |
CN112557771B (zh) * | 2020-12-02 | 2021-10-08 | 清华大学 | 一种温度稳定的高灵敏度微型电场传感器 |
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CN1147860A (zh) * | 1994-05-09 | 1997-04-16 | 迪肯研究室 | 成图形极化介质材料结构和装置的制作 |
US5875053A (en) * | 1996-01-26 | 1999-02-23 | Sdl, Inc. | Periodic electric field poled crystal waveguides |
JP2002196381A (ja) * | 2000-12-22 | 2002-07-12 | Matsushita Electric Ind Co Ltd | 光波長変換素子およびその製造方法 |
JP2004020749A (ja) * | 2002-06-13 | 2004-01-22 | Nippon Telegr & Teleph Corp <Ntt> | 波長変換素子用薄膜基板の製造方法及び波長変換素子の製造方法 |
CN1508575A (zh) * | 2002-12-20 | 2004-06-30 | 上海交通大学 | 介电体超晶格的光学滤波器及其制作方法 |
WO2005052682A1 (en) * | 2003-11-24 | 2005-06-09 | University Of Southampton | Fabrication of optical waveguides in periodically poled lithium niobate |
CN101661133A (zh) * | 2008-08-26 | 2010-03-03 | 华为技术有限公司 | 一种光波导及其制备方法和一种波长转换器 |
CN104880887A (zh) * | 2015-06-19 | 2015-09-02 | 天津大学 | 近化学计量比低掺杂Mg:PPLN全光波长转换器制作方法 |
-
2016
- 2016-06-21 CN CN201610464736.3A patent/CN106094263B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1147860A (zh) * | 1994-05-09 | 1997-04-16 | 迪肯研究室 | 成图形极化介质材料结构和装置的制作 |
US5875053A (en) * | 1996-01-26 | 1999-02-23 | Sdl, Inc. | Periodic electric field poled crystal waveguides |
JP2002196381A (ja) * | 2000-12-22 | 2002-07-12 | Matsushita Electric Ind Co Ltd | 光波長変換素子およびその製造方法 |
JP2004020749A (ja) * | 2002-06-13 | 2004-01-22 | Nippon Telegr & Teleph Corp <Ntt> | 波長変換素子用薄膜基板の製造方法及び波長変換素子の製造方法 |
CN1508575A (zh) * | 2002-12-20 | 2004-06-30 | 上海交通大学 | 介电体超晶格的光学滤波器及其制作方法 |
WO2005052682A1 (en) * | 2003-11-24 | 2005-06-09 | University Of Southampton | Fabrication of optical waveguides in periodically poled lithium niobate |
CN101661133A (zh) * | 2008-08-26 | 2010-03-03 | 华为技术有限公司 | 一种光波导及其制备方法和一种波长转换器 |
CN104880887A (zh) * | 2015-06-19 | 2015-09-02 | 天津大学 | 近化学计量比低掺杂Mg:PPLN全光波长转换器制作方法 |
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Effective date of registration: 20210728 Address after: Room 321-17, building 6-b, international enterprise R & D Park, No. 75, Tiansheng Road, Jiangbei new area, Nanjing, Jiangsu 210043 Patentee after: Nanjing Dingxin Photoelectric Technology Co.,Ltd. Address before: 300072 Tianjin City, Nankai District Wei Jin Road No. 92 Patentee before: Tianjin University |
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Effective date of registration: 20231029 Address after: 230000, 3rd Floor, Building D4, Innovation Industrial Park, No. 800 Wangjiang West Road, High tech Zone, Hefei City, Anhui Province Patentee after: Hefei Photon Computing Intelligent Technology Co.,Ltd. Address before: Room 321-17, building 6-b, international enterprise R & D Park, No. 75, Tiansheng Road, Jiangbei new area, Nanjing, Jiangsu 210043 Patentee before: Nanjing Dingxin Photoelectric Technology Co.,Ltd. |