CN106086494A - A kind of preparation method of silico-aluminum used for electronic packaging - Google Patents
A kind of preparation method of silico-aluminum used for electronic packaging Download PDFInfo
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- CN106086494A CN106086494A CN201610402544.XA CN201610402544A CN106086494A CN 106086494 A CN106086494 A CN 106086494A CN 201610402544 A CN201610402544 A CN 201610402544A CN 106086494 A CN106086494 A CN 106086494A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/1208—Containers or coating used therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
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- Metallurgy (AREA)
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- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
Abstract
The present invention relates to the preparation method of a kind of silico-aluminum used for electronic packaging, specifically refer to the preparation method of the silicon aluminum alloy material of a kind of high-compactness used for electronic packaging, high heat conductance, low thermal coefficient of expansion, belong to encapsulating material technical field.The method is that material powder fills powder after mixing and ball milling pretreatment and enters jacket, and then Vacuum Heat degasification is compressing in hot isostatic press, carries out machining subsequently and makes finished product with silica flour and aluminium powder as raw material.Silico-aluminum prepared by the present invention has the advantage that alloying component proportion width, and Si content is 10～95wt%, and Al is surplus；Consistency is high, and relative density reaches more than 99.5%, thermal conductivity is 100～180W/mK, and thermal coefficient of expansion is 5～15 × 10‑6/ K, it is possible to meet Aero-Space, the requirement of microelectronic industry Electronic Packaging.
Description
Technical field
The present invention relates to the preparation method of a kind of silico-aluminum used for electronic packaging, specifically refer to a kind of high cause used for electronic packaging
Density, high heat conductance, the preparation method of silicon aluminum alloy material of low thermal coefficient of expansion, belong to encapsulating material technical field.
Background technology
Along with Aero-Space microelectronic component, semiconductor integrated circuit are to high-power, miniaturization, lightweight, low cost, height
The direction of performance and high reliability is developed, and the integrated level of integrated circuit rapidly increases, and causes chip caloric value to steeply rise, chip
Life-span declines.It is reported, temperature often raises 10 DEG C, and what semiconductor chip produced because of the shortening in life-span lost efficacy just for original three
Times.This is due in microelectronic integrated circuit and high-power rectifying device, and between material, heat dispersion is the best and cause
Caused by the thermal stress that heat exhaustion and thermal coefficient of expansion do not mate and produce.The important means solving this problem uses exactly
The more preferable encapsulating material of new performance.
Current silico-aluminum used for electronic packaging mainly uses fusion casting, spray deposition and hot pressing sintering method to prepare.Tradition
The silico-aluminum prepared of fusion casting due to silicone content higher, primary silicon is grown to thick needle-like or lath-shaped mutually, and occurs
Serious segregation phenomena, causes mechanical property and physical deterioration, limits the actual application of material.Spray deposition is first
Jet deposition obtains billet and then realizes complete densification by high temperature insostatic pressing (HIP) or hot extrusion.Although spray deposition can obtain group
Be made into point uniformly, crystal grain is tiny, the silicon aluminum alloy material of function admirable, but there is complex process, densification high in cost of production is asked
Topic.There is silicone content the highest (generally less than 50%), poor air-tightness, large-scale production one-tenth in silico-aluminum prepared by hot pressing sintering method
The problems such as this height.
Summary of the invention
The technology of the present invention solves problem: overcomes the deficiencies in the prior art, proposes a kind of silico-aluminum used for electronic packaging
Preparation method, the silico-aluminum consistency for Electronic Packaging prepared by the method is high, thermal conductivity high, thermal coefficient of expansion is low,
And the method is produced on a large scale.
The technical solution of the present invention is:
A kind of preparation method of silico-aluminum used for electronic packaging, step is:
(1) mixed-powder of silica flour and aluminium powder is carried out pretreatment；
(2) will step (1) load in jacket through pretreated mixed-powder；
(3) step (2) is carried out Vacuum Heat degasification equipped with the jacket of mixed-powder；
(4) jacket after step (3) Vacuum Heat degasification is carried out high temperature insostatic pressing (HIP) densification, obtain compressing product
Product；
(5) step (4) compressing product is carried out machining and make finished product.
In described step (1), preprocessing process is: silica flour and aluminium powder are proportionally carried out mixing and ball milling, concrete work
Skill is Ball-milling Time 4～12h, rotational speed of ball-mill 100～200r/min, and ratio of grinding media to material is 5:1～15:1.
In described step (1), the granularity of described silica flour is-325 mesh, Al Powder Particle Size-400 mesh.
In described step (1), in mixed-powder, the mass content of silica flour is 10%-95%.
In described step (2), the material of described jacket is fine aluminium or 20# carbon steel.
When in mixed-powder, the mass content of silica flour is less than or equal to 50%, jacket selects fine aluminium jacket.
When in mixed-powder, the mass content of silica flour is more than 50%, jacket selects 20# carbon steel jacket.
In described step (2), the structure of described jacket silicon uses bending two to spell structure, and this structure is one with two
The hexahedron of convex surface, hexahedral four sides are formed by two one-tenth " Z " fonts and integrated board material splice, two " Z "
Font sheet material is designated as A sheet material and B sheet material respectively；
A sheet material includes that a long plane of structure, a short plane of structure and a vertical plane, the plane of structure of described length hang down with vertical plane
Directly, described short plane of structure is vertical with vertical plane；
B sheet material includes that a long plane of structure, a short plane of structure and a vertical plane, the plane of structure of described length hang down with vertical plane
Directly, described short plane of structure is vertical with vertical plane,
The plane of structure of the length of A sheet material constitutes a hexahedral side a, and the plane of structure of the length of B sheet material constitutes hexahedral one
The vertical plane of side b, A sheet material is a hexahedral side c, and the vertical plane of B sheet material is a hexahedral side d, the length of A sheet material
The plane of structure plane of structure short with B sheet material form a hexahedral convex surface m, the short plane of structure of A sheet material is formed with the plane of structure of B sheet material length
Hexahedral another convex surface n；Hexahedral upper surface is made up of upper end cover, and hexahedral lower surface is made up of bottom end cover；A plate
The plane of structure of the length of the material plane of structure short with B sheet material is welded to connect, and the short plane of structure of A sheet material welds with the plane of structure of B sheet material length
Connecing in succession, upper surface and lower surface pass through to be welded to connect with side.
The preparation method of structure jacket is spelled in described bending two: first the plate bending of described jacket material made for twice
Then two jacket main bodys are spliced by jacket main body, by spliced jacket main body along short bending part welding formation one
Individual square overall structure, finally welds together the square overall structure that upper end cover and bottom end cover and jacket main body are formed and makes
Described jacket.
In described step (3), the technique of described Vacuum Heat degasification is final outgassing temperature 300～600 DEG C, the most very
Reciprocal of duty cycle is more than 1 × 10-3Pa, on this basis insulation 30～300min.
In described step (4), described high temperature insostatic pressing (HIP) densification technique is press temperature 400～1100 DEG C, pressure
Pressing pressure 80～150MPa, temperature retention time 1～5h.
Beneficial effect
(1) it is an object of the invention to provide a kind of high-compactness used for electronic packaging, high heat conductance, low thermal coefficient of expansion
The preparation method of silicon aluminum alloy material；Silicon aluminum alloy material alloying component proportion width prepared by the present invention, Si content is 10
～95wt%, Al are surplus；Consistency is high, and relative density reaches more than 99.5%, thermal conductivity is 100～180W/mK, thermal expansion
Coefficient is 5～15 × 10-6/ K, it is possible to meet Aero-Space, the requirement of microelectronic industry Electronic Packaging；
(2) present invention is by selecting specific grain size proportion, it is ensured that have higher during powder pre-treating and filling
Dress powder density and powder are uniformly distributed, and lay the first stone for having good structural state and consistency during subsequent forming；
The granularity of material powder silica flour of the present invention is-325 mesh, Al Powder Particle Size-400 mesh；Powder pre-treating technique is by silica flour and aluminium powder
Proportionally carrying out mixing and ball milling, concrete technology is Ball-milling Time 4～12h, rotational speed of ball-mill 100～200r/min, and ratio of grinding media to material is
5:1～15:1.By powder size proportioning and pretreatment obtained composition uniformly, the SiAl mixed-powder of segregation-free；
(3) in the present invention, the wrapping structure of silico-aluminum uses bending two to spell structure, and this wrapping structure had both been easy to jacket and has been added
Work in turn ensure that soldering reliability；According to the ratio of silico-aluminum, rationally select jacket material；As silicone content≤50wt%,
Jacket material selection fine aluminium jacket；As silicone content ＞ 50wt%, jacket material selection 20# carbon steel；
(4) the Vacuum Heat degasification operation of the present invention is the committed step in heat and other static pressuring processes, and Vacuum Heat outgassing temperature is inclined
Low, absorbing gas cannot be extracted out, can directly affect target and finally shape and consistency；Vacuum Heat outgassing temperature is too high can be increased again
Add energy resource consumption and production cost；In the present invention, Vacuum Heat degassing process is final outgassing temperature 300～600 DEG C, final vacuum
Degree is more than 1 × 10-3Pa, on this basis insulation 30～300min；Whole degassing procedure need to be carried out with fine vacuum manual gear plate valve
Slowly degasification, prevents powder from extracting out.
(5) high temperature insostatic pressing (HIP) of the present invention is a kind of special powder sintered mode, at high temperature under high pressure, the active pole of powder
Big enhancing, can complete the densification process of material under than sintering lower temperature；Hip temperature is high temperature insostatic pressing (HIP) work
The core system of skill；Hip temperature is too low, it is impossible to realize the densification of sial powder；The too high meeting of hip temperature causes
Aluminum phase mobility increases, and owing to the wettability of aluminum liquid and silicon phase is poor, easily produces local aluminum when high temperature insostatic pressing (HIP) densification inclined
Analysis, thus cause silico-aluminum composition uneven and micro-crack generation；Component ratio according to silico-aluminum is different, selects in the present invention
The technique of the high temperature insostatic pressing (HIP) selected is press temperature 400～1100 DEG C, pressure 80～150MPa, temperature retention time 1～5h；
(6) compared with fusion casting, the method for the present invention can prepare high silicon content (Si content ＞ 30wt%), composition uniformly,
Crystal grain is tiny, the silico-aluminum of function admirable；Compared with spray deposition, present invention achieves direct high temperature insostatic pressing (HIP) densification,
Shorten production procedure, reduce production cost；In the silico-aluminum that at present prepared by spray deposition, Si content is to the maximum
70wt%, and the present invention can prepare the silico-aluminum that Si content is 95wt%, has expanded the range of application of silico-aluminum.With hot pressing
Sintering process is compared, and the present invention can realize the densification of silico-aluminum under lower press temperature, and crystal grain is more tiny simultaneously, causes
Density and air-tightness are more excellent, and high temperature insostatic pressing (HIP) can be accomplished scale production, and effectively reduce production cost, improve and produce effect
Rate.
(7) the invention provides a kind of high-compactness used for electronic packaging, high heat conductance, the silico-aluminum of low thermal coefficient of expansion
Preparation method.The method is that material powder fills powder after mixing and ball milling pretreatment and enters jacket with silica flour and aluminium powder as raw material,
Then Vacuum Heat degasification, compressing in hot isostatic press, carry out machining subsequently and make finished product.Silicon prepared by the present invention
Aluminium alloy has the advantage that alloying component proportion width, and Si content is 10～95wt%, and Al is surplus；Consistency is high, phase
Density reaches more than 99.5%, thermal conductivity is 100～180W/mK, and thermal coefficient of expansion is 5～15 × 10-6/ K, it is possible to meet boat
Empty space flight, the requirement of microelectronic industry Electronic Packaging.
Accompanying drawing explanation
Fig. 1 is the wrapping structure schematic diagram of the silico-aluminum used for electronic packaging of the present invention.
Detailed description of the invention
A kind of preparation method of silico-aluminum used for electronic packaging, step is:
(1) mixed-powder of silica flour and aluminium powder being carried out pretreatment, preprocessing process is: by silica flour and aluminium powder proportionally
Carrying out mixing and ball milling, concrete technology is Ball-milling Time 4～12h, rotational speed of ball-mill 100～200r/min, and ratio of grinding media to material is 5:1～15:
1；The granularity of described silica flour is-325 mesh, Al Powder Particle Size-400 mesh；In mixed-powder, the mass content of silica flour is 10%-
95%；
(2) will step (1) load in jacket through pretreated mixed-powder；The material of described jacket is fine aluminium
Or 20# carbon steel, when in mixed-powder, the mass content of silica flour is less than or equal to 50%, jacket selects fine aluminium jacket, works as mixed powder
When in end, the mass content of silica flour is more than 50%, jacket selects 20# carbon steel jacket；
As it is shown in figure 1, the structure of described jacket silicon uses bending two to spell structure, this structure is one with two convex surfaces
Hexahedron, hexahedral four sides are formed by two one-tenth " Z " fonts and integrated board material splice, two " Z " font plates
Material is designated as A sheet material and B sheet material respectively；
A sheet material includes that a long plane of structure, a short plane of structure and a vertical plane, the plane of structure of described length hang down with vertical plane
Directly, described short plane of structure is vertical with vertical plane；
B sheet material includes that a long plane of structure, a short plane of structure and a vertical plane, the plane of structure of described length hang down with vertical plane
Directly, described short plane of structure is vertical with vertical plane,
The plane of structure of the length of A sheet material constitutes a hexahedral side a, and the plane of structure of the length of B sheet material constitutes hexahedral one
The vertical plane of side b, A sheet material is a hexahedral side c, and the vertical plane of B sheet material is a hexahedral side d, the length of A sheet material
The plane of structure plane of structure short with B sheet material form a hexahedral convex surface m, the short plane of structure of A sheet material is formed with the plane of structure of B sheet material length
Hexahedral another convex surface n；Hexahedral upper surface is made up of upper end cover, and hexahedral lower surface is made up of bottom end cover；A plate
The plane of structure of the length of the material plane of structure short with B sheet material is welded to connect, and the short plane of structure of A sheet material welds with the plane of structure of B sheet material length
Connecing in succession, upper surface and lower surface pass through to be welded to connect with side.
The preparation method of structure jacket is spelled in described bending two: first the plate bending of described jacket material made for twice
Then two jacket main bodys are spliced by jacket main body, by spliced jacket main body along short bending part welding formation one
Individual square overall structure, finally welds together the square overall structure that upper end cover and bottom end cover and jacket main body are formed and makes
Described jacket.
(3) step (2) is carried out Vacuum Heat degasification equipped with the jacket of mixed-powder；The technique of described Vacuum Heat degasification is
Final outgassing temperature 300～600 DEG C, final vacuum is more than 1 × 10-3Pa, on this basis insulation 30～300min；Whole remove
Gas process fine vacuum manual gear plate valve carries out slow degasification, prevents powder from extracting out；
(4) jacket after step (3) Vacuum Heat degasification is carried out high temperature insostatic pressing (HIP) densification, obtain compressing product
Product, described high temperature insostatic pressing (HIP) densification technique is press temperature 400～1100 DEG C, pressing pressure 80～150MPa, insulation
Time 1～5h；
(5) step (4) compressing product is carried out machining and make finished product.
Hereinafter will further be described the present invention by specific embodiment, but be not limited to this.
Embodiment 1
According to component ratio Si30Al70, silica flour and aluminium powder ball milling are mixed by wt%, and ball-milling technology is Ball-milling Time 10h,
Rotational speed of ball-mill 120r/min, ratio of grinding media to material is 8:1.Being entered in jacket by mixed powder dress powder, sheath material is fine aluminium, welding
After carry out Vacuum Heat degasification.Vacuum Heat degassing process is final outgassing temperature 450 DEG C, and final vacuum is more than 1 × 10-3Pa,
180min it is incubated on the basis of this.Jacket after Vacuum Heat degasification is carried out high temperature insostatic pressing (HIP) densification.The technique of high temperature insostatic pressing (HIP)
Parameter is: temperature 500 DEG C, pressure 140MPa, temperature retention time 3h.Through test, the relative density of silico-aluminum is 99.86%,
Thermal conductivity is 165W/mK, and thermal coefficient of expansion is 14 × 10-6/K。
Embodiment 2
According to component ratio Si50Al50, silica flour and aluminium powder ball milling are mixed by wt%, and ball-milling technology is Ball-milling Time 6h, ball
Mill rotating speed 160r/min, ratio of grinding media to material is 6:1.Being entered in jacket by mixed powder dress powder, sheath material is fine aluminium, after welding
Carry out Vacuum Heat degasification.Vacuum Heat degassing process is final outgassing temperature 500 DEG C, and final vacuum is more than 1 × 10-3Pa, at this
On the basis of be incubated 100min.Jacket after Vacuum Heat degasification is carried out high temperature insostatic pressing (HIP) densification.The technique ginseng of high temperature insostatic pressing (HIP)
Number is: temperature 600 DEG C, pressure 120MPa, temperature retention time 2h.Through test, the relative density of silico-aluminum is 99.78%, heat
Conductance is 152W/mK, and thermal coefficient of expansion is 9.7 × 10-6/K。
Embodiment 3
According to component ratio Si70Al30, silica flour and aluminium powder ball milling are mixed by wt%, and ball-milling technology is Ball-milling Time 8h, ball
Mill rotating speed 150r/min, ratio of grinding media to material is 9:1.Being entered in jacket by mixed powder dress powder, sheath material is 20# carbon steel, weldering
Vacuum Heat degasification is carried out after connecing.Vacuum Heat degassing process is final outgassing temperature 650 DEG C, and final vacuum is more than 1 × 10-3Pa,
It is incubated 150min on this basis.Jacket after Vacuum Heat degasification is carried out high temperature insostatic pressing (HIP) densification.The work of high temperature insostatic pressing (HIP)
Skill parameter is: temperature 800 DEG C, pressure 150MPa, temperature retention time 1h.Through test, the relative density of silico-aluminum is
99.69%, thermal conductivity is 130W/mK, and thermal coefficient of expansion is 7.2 × 10-6/K。
Embodiment 4
According to component ratio Si90Al10, silica flour and aluminium powder ball milling are mixed by wt%, and ball-milling technology is Ball-milling Time 12h,
Rotational speed of ball-mill 180r/min, ratio of grinding media to material is 12:1.Being entered in jacket by mixed powder dress powder, sheath material is 20# carbon steel,
Vacuum Heat degasification is carried out after welding.Vacuum Heat degassing process is final outgassing temperature 750 DEG C, and final vacuum is more than 1 × 10- 3Pa, is incubated 240min on this basis.Jacket after Vacuum Heat degasification is carried out high temperature insostatic pressing (HIP) densification.High temperature insostatic pressing (HIP)
Technological parameter be: temperature 950 DEG C, pressure 90MPa, temperature retention time 1.5h.Through test, the relative density of silico-aluminum is
99.63%, thermal conductivity is 108W/mK, and thermal coefficient of expansion is 6.4 × 10-6/K。
Above by embodiment, the present invention is explained in detail, but the present invention is not limited to above-described embodiment, not
It is used to limit the present invention.Description of the invention is not described in detail content and belongs to skill known in professional and technical personnel in the field
Art.Any those skilled in the art in the range of without departing from the technical spirit of the present invention, the present invention can be made variation and
Amendment, therefore, every without departing from the technology of the present invention essence, any simple modification made on this basis and change belong to this
The protection domain of inventive technique scheme.
Claims (10)
1. the preparation method of a silico-aluminum used for electronic packaging, it is characterised in that step is:
(1) mixed-powder of silica flour and aluminium powder is carried out pretreatment；
(2) will step (1) load in jacket through pretreated mixed-powder；
(3) step (2) is carried out Vacuum Heat degasification equipped with the jacket of mixed-powder；
(4) jacket after step (3) Vacuum Heat degasification is carried out high temperature insostatic pressing (HIP) densification, obtain compressing product；
(5) step (4) compressing product is carried out machining and make finished product.
The preparation method of a kind of silico-aluminum used for electronic packaging the most according to claim 1, it is characterised in that: described step
Suddenly in (1), preprocessing process is: silica flour and aluminium powder are proportionally carried out mixing and ball milling, concrete technology be Ball-milling Time 4～
12h, rotational speed of ball-mill 100～200r/min, ratio of grinding media to material is 5:1～15:1.
The preparation method of a kind of silico-aluminum used for electronic packaging the most according to claim 1, it is characterised in that: described step
Suddenly in (1), the granularity of described silica flour is-325 mesh, Al Powder Particle Size-400 mesh.
The preparation method of a kind of silico-aluminum used for electronic packaging the most according to claim 1, it is characterised in that: described step
Suddenly, in (1), in mixed-powder, the mass content of silica flour is 10%-95%.
The preparation method of a kind of silico-aluminum used for electronic packaging the most according to claim 1, it is characterised in that: described step
Suddenly, in (2), the material of described jacket is fine aluminium or 20# carbon steel.
The preparation method of a kind of silico-aluminum used for electronic packaging the most according to claim 5, it is characterised in that: work as mixed powder
When in end, the mass content of silica flour is less than or equal to 50%, jacket selects fine aluminium jacket, when the mass content of silica flour in mixed-powder
During more than 50%, jacket selects 20# carbon steel jacket.
The preparation method of a kind of silico-aluminum used for electronic packaging the most according to claim 1, it is characterised in that: described step
Suddenly in (2), the structure of described jacket silicon uses bending two to spell structure, and this structure is one with the hexahedron of two convex surfaces, and six
Four sides of face body are formed by two one-tenth " Z " fonts and integrated board material splice, and two " Z " font sheet materials are designated as respectively
A sheet material and B sheet material；
A sheet material includes a long plane of structure, a short plane of structure and a vertical plane, and the plane of structure of described length is vertical with vertical plane, institute
The short plane of structure stated is vertical with vertical plane；
B sheet material includes a long plane of structure, a short plane of structure and a vertical plane, and the plane of structure of described length is vertical with vertical plane, institute
The short plane of structure stated is vertical with vertical plane,
The plane of structure of the length of A sheet material constitutes a hexahedral side a, and the plane of structure of the length of B sheet material constitutes a hexahedral side
The vertical plane of b, A sheet material is a hexahedral side c, and the vertical plane of B sheet material is a hexahedral side d, the horizontal stroke of the length of A sheet material
The face plane of structure short with B sheet material forms a hexahedral convex surface m, and the short plane of structure of A sheet material is formed hexahedro with the plane of structure of B sheet material length
Another convex surface n of body；Hexahedral upper surface is made up of upper end cover, and hexahedral lower surface is made up of bottom end cover；A sheet material
The plane of structure that long plane of structure is short with B sheet material is welded to connect, and the short plane of structure of A sheet material carries out, with the plane of structure of B sheet material length, the company of welding
Connecing, upper surface and lower surface pass through to be welded to connect with side.
The preparation method of a kind of silico-aluminum used for electronic packaging the most according to claim 7, it is characterised in that: described bending
Two preparation methoies spelling structure jacket are: first the plate bending of described jacket material makes for twice jacket main body, then will
Two jacket main bodys are spliced, and along short bending part welding, spliced jacket main body is formed a square overall structure,
Finally the square overall structure of upper end cover and bottom end cover and the formation of jacket main body is welded together and make described jacket.
The preparation method of a kind of silico-aluminum used for electronic packaging the most according to claim 1, it is characterised in that: described step
Suddenly in (3), the technique of described Vacuum Heat degasification is final outgassing temperature 300～600 DEG C, and final vacuum is more than 1 × 10- 3Pa, on this basis insulation 30～300min.
The preparation method of a kind of silico-aluminum used for electronic packaging the most according to claim 1, it is characterised in that: described
In step (4), described high temperature insostatic pressing (HIP) densification technique is press temperature 400～1100 DEG C, pressing pressure 80～
150MPa, temperature retention time 1～5h.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106493352A (en) * | 2016-11-29 | 2017-03-15 | 广东坚美铝型材厂（集团）有限公司 | A kind of aluminium silicon electronic packing material and preparation method thereof |
| CN106756163A (en) * | 2016-11-24 | 2017-05-31 | 江苏时代华宜电子科技有限公司 | A kind of preparation method of the adjustable composite of thermal expansion |
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| CN112899624A (en) * | 2021-01-19 | 2021-06-04 | 宁波江丰电子材料股份有限公司 | Aluminum-silicon alloy sputtering target material and preparation method and application thereof |
| CN113692198A (en) * | 2021-08-26 | 2021-11-23 | 哈尔滨铸鼎工大新材料科技有限公司 | Silicon-aluminum alloy built-in cooling structure and forming method thereof |
| CN114134373A (en) * | 2021-11-16 | 2022-03-04 | 哈尔滨铸鼎工大新材料科技有限公司 | Silicon-aluminum alloy packaging material with high tensile strength and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101407907A (en) * | 2008-11-28 | 2009-04-15 | 株洲冶炼集团股份有限公司 | Sheath for producing target material by hot isostatic pressing and method for producing target material |
| CN102114541A (en) * | 2009-12-30 | 2011-07-06 | 北京有色金属研究总院 | Preparation process of high volume fraction silicon particle enhanced aluminum based composite material |
| CN104213004A (en) * | 2013-06-05 | 2014-12-17 | 北京有色金属研究总院 | Laser weldable aluminum based composite material and preparation method thereof |
| CN105483454A (en) * | 2015-12-28 | 2016-04-13 | 北京有色金属研究总院 | Manufacturing method of laminated aluminum matrix composite for electronic packaging |
-
2016
- 2016-06-08 CN CN201610402544.XA patent/CN106086494B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101407907A (en) * | 2008-11-28 | 2009-04-15 | 株洲冶炼集团股份有限公司 | Sheath for producing target material by hot isostatic pressing and method for producing target material |
| CN102114541A (en) * | 2009-12-30 | 2011-07-06 | 北京有色金属研究总院 | Preparation process of high volume fraction silicon particle enhanced aluminum based composite material |
| CN104213004A (en) * | 2013-06-05 | 2014-12-17 | 北京有色金属研究总院 | Laser weldable aluminum based composite material and preparation method thereof |
| CN105483454A (en) * | 2015-12-28 | 2016-04-13 | 北京有色金属研究总院 | Manufacturing method of laminated aluminum matrix composite for electronic packaging |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106756163A (en) * | 2016-11-24 | 2017-05-31 | 江苏时代华宜电子科技有限公司 | A kind of preparation method of the adjustable composite of thermal expansion |
| CN106493352A (en) * | 2016-11-29 | 2017-03-15 | 广东坚美铝型材厂（集团）有限公司 | A kind of aluminium silicon electronic packing material and preparation method thereof |
| CN106493352B (en) * | 2016-11-29 | 2018-08-10 | 广东坚美铝型材厂（集团）有限公司 | A kind of aluminium silicon electronic packing material and preparation method thereof |
| CN107034389A (en) * | 2017-03-01 | 2017-08-11 | 东莞市联洲知识产权运营管理有限公司 | A kind of radioresistance electronic package material based on Al W Si and preparation method thereof |
| CN109487130A (en) * | 2018-12-26 | 2019-03-19 | 东莞理工学院 | A kind of Al-Si composites and preparation method thereof for Electronic Packaging |
| CN112391567A (en) * | 2019-10-09 | 2021-02-23 | 湖北中烟工业有限责任公司 | Ni-based composite material heating body and preparation method thereof |
| CN112391567B (en) * | 2019-10-09 | 2022-02-08 | 湖北中烟工业有限责任公司 | Si-based composite material heating body and preparation method thereof |
| CN112809002A (en) * | 2020-12-29 | 2021-05-18 | 宁波江丰电子材料股份有限公司 | Preparation method of aluminum-silicon alloy target blank |
| CN112899624A (en) * | 2021-01-19 | 2021-06-04 | 宁波江丰电子材料股份有限公司 | Aluminum-silicon alloy sputtering target material and preparation method and application thereof |
| CN113692198A (en) * | 2021-08-26 | 2021-11-23 | 哈尔滨铸鼎工大新材料科技有限公司 | Silicon-aluminum alloy built-in cooling structure and forming method thereof |
| CN114134373A (en) * | 2021-11-16 | 2022-03-04 | 哈尔滨铸鼎工大新材料科技有限公司 | Silicon-aluminum alloy packaging material with high tensile strength and preparation method thereof |
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