CN106078088A - In discharge plasma photolithography light source, extreme ultraviolet collects the direct method for turning of mirror - Google Patents

In discharge plasma photolithography light source, extreme ultraviolet collects the direct method for turning of mirror Download PDF

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Publication number
CN106078088A
CN106078088A CN201610437954.8A CN201610437954A CN106078088A CN 106078088 A CN106078088 A CN 106078088A CN 201610437954 A CN201610437954 A CN 201610437954A CN 106078088 A CN106078088 A CN 106078088A
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China
Prior art keywords
mirror
turning
extreme ultraviolet
collects
lens barrel
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Pending
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CN201610437954.8A
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Chinese (zh)
Inventor
王骐
赵永蓬
徐强
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Harbin Institute of Technology
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Harbin Institute of Technology
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Priority to CN201610437954.8A priority Critical patent/CN106078088A/en
Publication of CN106078088A publication Critical patent/CN106078088A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23PMETAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P15/00Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

In discharge plasma photolithography light source, extreme ultraviolet collects the direct method for turning of mirror, relates to optics and Precision Machining field, and existing to collecting the method that mirror is processed in order to solve, processing technique requirement is the highest, the problem adding processing cost.The method is: blank molding, rough turn processing, machining preparation, plating nickel-phosphorus alloy layer, and finish turning is processed, artificial polishing, and face type detects, turning edge, completes to collect the making of mirror.The present invention uses the method for direct turning, and process time is short, significantly reduces cost, it is adaptable in turnery processing discharge plasma photolithography light source, extreme ultraviolet collects mirror.

Description

In discharge plasma photolithography light source, extreme ultraviolet collects the direct method for turning of mirror
Technical field
The present invention relates to optics and Precision Machining field, be specifically related to extreme ultraviolet and collect mirror direct turning technology.
Background technology
Discharge plasma (DPP) is by under big electric current Fast pulsed discharge Z constriction mechanism, producing 13.5nm in Xe medium Extreme ultraviolet, at capillary outlet, extreme ultraviolet can be +50~+300;-50~-300Space radiation, effectively by each portion Split pole ultraviolet light collects, and obtains high power extreme ultraviolet at focal point, to couple with post-exposure machine, for photoetching, is A great technology in DPP photolithography light source.
This collection mirror, is to use complicated face, surface type, and the collection eyeglass that roughness is the highest, by the ultraviolet of pole glancing incidence Luminous reflectance is at focal point.In order to the extreme ultraviolet of spatial distribution is the most effectively collected, it is desirable to collect mirror system every Collecting eyeglass is shell structure, tries one's best and stops space radiation less, thus by collection lens combination descending for diameter together, Forming multilamellar and collect eyeglass, composition collects mirror system.This about 3mm is thick, and bore is descending, collects lens set for usual 10 The collection mirror system become, collects eyeglass to every and requires then:
1, because being shell structure, usual thickness is not more than 3mm, and face type requires the highest, it is desirable to indeformable in work, surface Roughness requires again the highest, because of to the light glancing incidence reflection that wavelength is 13.5nm, reflectance height and surface roughness relation shadow Ring very big, and face type can directly affect focal point state;
2, the collection that face, mirror surface type is typically to be combined is collected by two aspheric surface face types (ellipsoid type is with doubly curved) Mirror type, surface structure is complicated;
3, collect mirror surface roughness and should be about 1nm;
4, collect mirror Material Strength and want height, under high-repetition-rate illumination, indeformable.
Use mandrel plated film the most in the world, the method for demoulding is processed collecting mirror, and the processing technique of the method is wanted Ask the highest, add processing cost.
Summary of the invention
The invention aims to solve the existing method being processed collection mirror, processing technique requires the highest, The problem adding processing cost, thus provide extreme ultraviolet in discharge plasma photolithography light source to collect the direct turning side of mirror Method.
In discharge plasma photolithography light source of the present invention, extreme ultraviolet collects the direct method for turning of mirror, the method bag Include following steps:
Step one, blank molding, reflectal blank, obtain blank workpiece, described blank is tubing;
Step 2, rough turn processing, carry out rough turn processing and obtain cylindrical work pieces blank workpiece, and cylindrical work pieces small-caliber end sets There is a circle edge;
Step 3, machining preparation, the cylindrical work pieces utilizing diamond lathe to obtain step 2 machines to be received Collection lens barrel base;
Step 4, plating nickel-phosphorus alloy layer, the collection lens barrel base inner surface plating thickness obtained in step 3 with chemical plating method Reach the ni-p alloy coating of 200 μm;
Step 5, finish turning are processed, and the collection lens barrel base after step 4 plating nickel-phosphorus alloy layer is carried out finish turning processing;
Step 6, artificial polishing, the collection artificial polishing of lens barrel base after step 5 finish turning is processed;
Step 7, face type detect, and detect, the inner surface face type collecting lens barrel base after polishing if face type meets The requirement collecting mirror type then carries out step 8, otherwise returns step 6;
Step 8, turning edge, fall the edge turning of satisfactory collection lens barrel base after detection, complete to collect mirror Make.
Beneficial effect:
Existing contact contourograph cannot detect the long heavy caliber of axial length and collect the inner surface face type of eyeglass, this The detection method of bright proposition, it is easy to accomplish, step is simple, not limits the size collecting mirror, may be used for detecting axial length ratio Longer heavy caliber collects the inner surface face type of eyeglass.The direct method for turning of the present invention ensure that wanting of face type and roughness Asking, meet the application demand collecting mirror, the surface roughness collecting lens barrel base after finish turning processing just can reach 5nm, this The method of the direct turning of bright employing, process time is short, significantly reduces cost.
Present invention extreme ultraviolet be applicable to turnery processing discharge plasma photolithography light source collects mirror.
Accompanying drawing explanation
Fig. 1 is the structural representation of the cylindrical work pieces in detailed description of the invention one;9 is edge, and 10 is cylindrical work pieces;
Fig. 2 is the structural representation of the detection device in detailed description of the invention six.
Detailed description of the invention
Detailed description of the invention one: combine Fig. 1 and illustrate present embodiment, the discharge plasma described in present embodiment In photolithography light source, extreme ultraviolet collects the direct method for turning of mirror, and the method comprises the following steps:
Step one, blank molding, reflectal blank, obtain blank workpiece, described blank is tubing;
Step 2, rough turn processing, carry out rough turn processing and obtain cylindrical work pieces blank workpiece, and cylindrical work pieces small-caliber end sets There is a circle edge;
Step 3, machining preparation, the cylindrical work pieces utilizing diamond lathe to obtain step 2 machines to be received Collection lens barrel base;
Step 4, plating nickel-phosphorus alloy layer, the collection lens barrel base inner surface plating thickness obtained in step 3 with chemical plating method Reach the ni-p alloy coating of 200 μm;
Step 5, finish turning are processed, and the collection lens barrel base after step 4 plating nickel-phosphorus alloy layer is carried out finish turning processing;
Step 6, artificial polishing, the collection artificial polishing of lens barrel base after step 5 finish turning is processed;
Step 7, face type detect, and detect, the inner surface face type collecting lens barrel base after polishing if face type meets The requirement collecting mirror type then carries out step 8, otherwise returns step 6;
Step 8, turning edge, fall the edge turning of satisfactory collection lens barrel base after detection, complete to collect mirror Make.
Tubing is forged, strengthens density of material.For ensureing that subsequent workpiece processes the needs that are installed, cylindrical work pieces 10 is little A circle edge 9, also referred to as overlap technique tail it is equipped with on the inner and outer wall of bore end.After rough turn processing, also need to be by diamond Lathe machining preparation once, makes cylindrical work pieces surface roughness improve, and reaches 0.4 micron to 0.8 micron, in order to carry out chemical plating Plating nickel-phosphorus alloy layer.After completing, monolithic is collected microscopy and surveys, after meeting design requirement, be collected lens systems integrated, The method using the test of assembling limit, limit carries out the system integration.
Detailed description of the invention two: present embodiment is to the discharge plasma photolithography light source described in detailed description of the invention one Middle extreme ultraviolet is collected the direct method for turning of mirror and is described further, and in present embodiment, in step one, aluminum alloy blank is LY-12 aluminium alloy, tube outer diameter is than collecting the mirror big 5mm of bigbore external diameter, and tube wall thickness is more than 100mm.
Detailed description of the invention three: present embodiment is to the discharge plasma photoetching described in detailed description of the invention one or two In light source, the extreme ultraviolet collection direct method for turning of mirror is described further, and in present embodiment, in step 2, uses " extremely purple Optical collection mirror direct turnery processing rough machining method in outer photolithography light source " blank workpiece is carried out rough turn processing.
" optical collection mirror direct turnery processing rough machining method in extreme Ultraviolet Lithography Source " is the special of this seminar proposition Profit number is the patent of invention of ZL201310438498.5, when blank workpiece numerically controlled lathe is carried out roughing, the most key When one step is lathe in machining, after every turning one cutter, carry out once to size stabilization, turnery processing 6 the most repeatedly Secondary-8 times, be abundant freezing, heat treated, it is ensured that material is placed under any adverse circumstances the most indeformable mesh.
Detailed description of the invention four: present embodiment is to the discharge plasma photoetching described in detailed description of the invention one or two In light source, the extreme ultraviolet collection direct method for turning of mirror is described further, and in present embodiment, in step 4, uses " electricity arteries and veins The method purging with high Ni-P Chemical Plating Layer thickness " to collecting lens barrel base plating nickel-phosphorus alloy layer.
" electric pulse improves the method for Ni-P Chemical Plating Layer thickness " is Patent No. ZL2014 that this seminar proposes The patent of invention of 1006 2341.1.
Detailed description of the invention five: present embodiment is to the discharge plasma photoetching described in detailed description of the invention one or two In light source, the extreme ultraviolet collection direct method for turning of mirror is described further, and in present embodiment, in step 5, uses " extremely purple Optical collection mirror direct turnery processing method for fine finishing in outer photolithography light source " collection lens barrel base is carried out finish turning processing.
" optical collection mirror direct turnery processing method for fine finishing in extreme Ultraviolet Lithography Source " is the special of this seminar proposition Profit number is the patent of invention of ZL201310435460.2.Carrying out finish turning processing, eyeglass physical dimension to reach to design requirement, i.e. adds Work goes out a wall thickness 2mm, face, surface type satisfactory collection lens barrel base, but the rough surface being likely to be breached because of diamond lathe Degree is only capable of reaching more than this index of 5nm (being according to the print processed simultaneously, use the result that contourograph device to test obtains), Gap is also had with ideal surfaced roughness.So also needing to artificial polishing to improve surface roughness index further.
Detailed description of the invention six: combine Fig. 2 and illustrate present embodiment, present embodiment is to detailed description of the invention one Or the extreme ultraviolet collection direct method for turning of mirror is described further in the discharge plasma photolithography light source described in two, this enforcement In mode, in step 7, the method for detection realizes based on a kind of device, this device include semiconductor laser 1, clouded glass 2, Ccd sensor the 3, the 1st dimension adjusts platform the 4, the 2nd 5 dimension and adjusts platform 5, collects lens holder 6 and computer;
Post the black scraps of paper on clouded glass 2, the black scraps of paper have small sircle hole;
The laser light incident of semiconductor laser 1 outgoing is to clouded glass 2, by the light of the small sircle hole transmission of clouded glass 2 through collecting Lens barrel base 7 converges to ccd sensor 3;
Collecting lens holder 6 to be fixed in the optical path by collection lens barrel base 7, semiconductor laser 1 and clouded glass 2 are fixed on One or five dimension adjusts on platform 4, and ccd sensor 3 is fixed on the two or five dimension by liftable sleeve 3-1 below and adjusts on platform 5, Computer is connected with the outfan of ccd sensor 3, and computer is used for measuring CCD (Charge-coupled Device, electric charge coupling Close element) hot spot that receives of sensor 3 and record facula information;
Above-mentioned detection method comprises the following steps:
Open semiconductor laser 1;
Adjust the one or five dimension adjustment platform 4 and make optical axis and the axle of small sircle hole on clouded glass 2 of semiconductor laser 1 shoot laser Line overlaps;
Lens holder 6 is collected in regulation, makes the axis of collection eyeglass 7 and described optical axis coincidence;
Regulate the two or five dimension adjustment platform 5 and liftable sleeve 3-1 makes ccd sensor 3 receive light beam;
Facula information is obtained, it is judged that whether the focal point in design obtains the hot spot converged, focal point according to computer Spot size is no with shape consistent with design, and the light distribution of focal point hot spot is the most uniform, if it is judged that be is, Then this collection lens barrel base 7 meets the requirements, the most undesirable.
The black scraps of paper are attached to the clouded glass 2 side away from semiconductor laser 1, and this side is hair side, to light scattering, for mould Lopar ultraviolet light, opposite side is bright finish.Above-mentioned detection device is positioned on optical table 8.

Claims (6)

1. in discharge plasma photolithography light source, extreme ultraviolet collects the direct method for turning of mirror, it is characterised in that the method includes Following steps:
Step one, blank molding, reflectal blank, obtain blank workpiece, described blank is tubing;
Step 2, rough turn processing, carry out rough turn processing and obtain cylindrical work pieces blank workpiece, and cylindrical work pieces small-caliber end is provided with one Circle edge;
Step 3, machining preparation, the cylindrical work pieces utilizing diamond lathe to obtain step 2 machines and obtains collecting mirror Cylinder base;
Step 4, plating nickel-phosphorus alloy layer, the collection lens barrel base inner surface plating thickness obtained in step 3 with chemical plating method reaches 200 The ni-p alloy coating of μm;
Step 5, finish turning are processed, and the collection lens barrel base after step 4 plating nickel-phosphorus alloy layer is carried out finish turning processing;
Step 6, artificial polishing, the collection artificial polishing of lens barrel base after step 5 finish turning is processed;
Step 7, face type detect, and detect, the inner surface face type collecting lens barrel base after polishing if face type meets collection The requirement of mirror type then carries out step 8, otherwise returns step 6;
Step 8, turning edge, fall the edge turning of satisfactory collection lens barrel base after detection, complete to collect the system of mirror Make.
In discharge plasma photolithography light source the most according to claim 1, extreme ultraviolet collects the direct method for turning of mirror, its Being characterised by, in step one, aluminum alloy blank is LY-12 aluminium alloy, and tube outer diameter ratio collects the mirror big 5mm of bigbore external diameter, Tube wall thickness is more than 100mm.
In discharge plasma photolithography light source the most according to claim 1 and 2, extreme ultraviolet collects the direct method for turning of mirror, It is characterized in that, in step 2, use " optical collection mirror direct turnery processing rough machining method in extreme Ultraviolet Lithography Source " right Blank workpiece carries out rough turn processing.
In discharge plasma photolithography light source the most according to claim 1 and 2, extreme ultraviolet collects the direct method for turning of mirror, It is characterized in that, in step 4, use " electric pulse improves the method for Ni-P Chemical Plating Layer thickness " to collecting the plating of lens barrel base Ni-p alloy coating.
In discharge plasma photolithography light source the most according to claim 1 and 2, extreme ultraviolet collects the direct method for turning of mirror, It is characterized in that, in step 5, use " optical collection mirror direct turnery processing method for fine finishing in extreme Ultraviolet Lithography Source " right Collect lens barrel base and carry out finish turning processing.
In discharge plasma photolithography light source the most according to claim 1 and 2, extreme ultraviolet collects the direct method for turning of mirror, It is characterized in that, in step 7, the method for detection realizes based on a kind of device, and this device includes semiconductor laser (1), hair glass Glass (2), ccd sensor (3), the one or five dimension adjust platform (4), the two or five dimension adjusts platform (5), collect lens holder (6) and meter Calculation machine;
Post the black scraps of paper on clouded glass (2), the black scraps of paper have small sircle hole;
The laser light incident of semiconductor laser (1) outgoing is to clouded glass (2), by the light of the small sircle hole transmission of clouded glass (2) through receiving Collection lens barrel base (7) converges to ccd sensor (3);
Collecting lens holder (6) collection lens barrel base (7) to be fixed in the optical path, semiconductor laser (1) and clouded glass (2) are solid Being scheduled on the one or five dimension and adjust on platform (4), ccd sensor (3) is fixed on the two or five dimension by liftable sleeve (3-1) below Adjusting on platform (5), computer is connected with the outfan of ccd sensor (3), and computer is used for measuring ccd sensor (3) and receives Hot spot and record facula information;
Described detection method comprises the following steps:
Open semiconductor laser (1);
Adjust the one or five dimension adjustment platform (4) and make optical axis and clouded glass (2) the above small sircle hole of semiconductor laser (1) shoot laser Dead in line;
Lens holder (6) is collected in regulation, makes the axis of collection eyeglass (7) and described optical axis coincidence;
Regulate the two or five dimension adjustment platform (5) and liftable sleeve (3-1) makes ccd sensor (3) receive light beam;
Facula information is obtained, it is judged that whether the focal point in design obtains the hot spot converged, the hot spot of focal point according to computer Size and shape is no consistent with design, and the light distribution of focal point hot spot is the most uniform, if it is judged that be is, then should Collect lens barrel base (7) to meet the requirements, the most undesirable.
CN201610437954.8A 2016-06-17 2016-06-17 In discharge plasma photolithography light source, extreme ultraviolet collects the direct method for turning of mirror Pending CN106078088A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107570967A (en) * 2017-08-22 2018-01-12 哈尔滨工业大学 A kind of manufacturing process of Wolter I types precision mandrel
CN110125615A (en) * 2019-04-23 2019-08-16 北京控制工程研究所 For replicating the Subnano-class mandrel and manufacturing process of manufacture grazing incidence mirror piece
CN117353138A (en) * 2023-10-17 2024-01-05 江阴创可激光技术有限公司 Heat radiation structure of high-power laser lens
CN117353138B (en) * 2023-10-17 2024-06-04 江阴创可激光技术有限公司 Heat radiation structure of high-power laser lens

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070144629A1 (en) * 2003-12-18 2007-06-28 Showa Denko K.K. Method for producing shaped article of aluminum alloy, shaped aluminum alloy article and production system
JP2007179881A (en) * 2005-12-28 2007-07-12 Ushio Inc Extreme ultraviolet light source device
JP2008044086A (en) * 2006-08-19 2008-02-28 Fujiwara Denshi Kogyo:Kk Cutting method and device, and substrate cut by the cutting method
JP4842084B2 (en) * 2006-10-19 2011-12-21 株式会社小松製作所 Extreme ultraviolet light source device and collector mirror
CN103433507A (en) * 2013-09-23 2013-12-11 哈尔滨工业大学 Finish machining method of direct lathe machining of optical collecting mirror in EUV (extreme ultra-violet) lithography light sources
CN103447552A (en) * 2013-09-24 2013-12-18 哈尔滨工业大学 Direct turning and roughing method for optical collecting lens of extreme ultra-violet lithography light source
CN103774126A (en) * 2014-02-24 2014-05-07 哈尔滨工业大学 Method for increasing thickness of chemical nickel-phosphorus plating alloy layer through electrical pulse
CN104128757A (en) * 2014-07-24 2014-11-05 成都亨通兆业精密机械有限公司 Lathe spindle machining technology facilitating surface hardenability depth

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070144629A1 (en) * 2003-12-18 2007-06-28 Showa Denko K.K. Method for producing shaped article of aluminum alloy, shaped aluminum alloy article and production system
JP2007179881A (en) * 2005-12-28 2007-07-12 Ushio Inc Extreme ultraviolet light source device
JP2008044086A (en) * 2006-08-19 2008-02-28 Fujiwara Denshi Kogyo:Kk Cutting method and device, and substrate cut by the cutting method
JP4842084B2 (en) * 2006-10-19 2011-12-21 株式会社小松製作所 Extreme ultraviolet light source device and collector mirror
CN103433507A (en) * 2013-09-23 2013-12-11 哈尔滨工业大学 Finish machining method of direct lathe machining of optical collecting mirror in EUV (extreme ultra-violet) lithography light sources
CN103447552A (en) * 2013-09-24 2013-12-18 哈尔滨工业大学 Direct turning and roughing method for optical collecting lens of extreme ultra-violet lithography light source
CN103774126A (en) * 2014-02-24 2014-05-07 哈尔滨工业大学 Method for increasing thickness of chemical nickel-phosphorus plating alloy layer through electrical pulse
CN104128757A (en) * 2014-07-24 2014-11-05 成都亨通兆业精密机械有限公司 Lathe spindle machining technology facilitating surface hardenability depth

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
祝东远: "极紫外光源收集***设计与加工方法研究", 《中国优秀硕士学位论文全文数据库-信息科学辑》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107570967A (en) * 2017-08-22 2018-01-12 哈尔滨工业大学 A kind of manufacturing process of Wolter I types precision mandrel
CN110125615A (en) * 2019-04-23 2019-08-16 北京控制工程研究所 For replicating the Subnano-class mandrel and manufacturing process of manufacture grazing incidence mirror piece
CN117353138A (en) * 2023-10-17 2024-01-05 江阴创可激光技术有限公司 Heat radiation structure of high-power laser lens
CN117353138B (en) * 2023-10-17 2024-06-04 江阴创可激光技术有限公司 Heat radiation structure of high-power laser lens

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