CN106058050A - Conductive channel manufacturing method - Google Patents
Conductive channel manufacturing method Download PDFInfo
- Publication number
- CN106058050A CN106058050A CN201610663451.2A CN201610663451A CN106058050A CN 106058050 A CN106058050 A CN 106058050A CN 201610663451 A CN201610663451 A CN 201610663451A CN 106058050 A CN106058050 A CN 106058050A
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- CN
- China
- Prior art keywords
- patterning
- organic
- layer
- conducting channel
- organic semiconductor
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
Abstract
The invention provides a conductive channel manufacturing method, and the method comprises the steps: providing a substrate; forming a patterned first organic sacrificial layer on the substrate; forming a patterned first organic semiconductor layer on the substrate; removing the patterned first organic sacrificial layer, and enabling a first channel part of the patterned first organic semiconductor layer to form a first conductive channel; forming a patterned second organic sacrificial layer on the substrate; forming a patterned second organic semiconductor layer on the substrate; removing the patterned second organic sacrificial layer, and enabling a second channel part of the patterned second organic semiconductor layer to form a second conductive channel. The method can directly define the patterned conductive channels on a target substrate or other function layers, does not need some high-quality vacuum or printing equipment, reduces the equipment cost, and is simpler in technological process.
Description
Technical field
The present invention relates to the manufacturing technology of thin film transistor (TFT), particularly relate to the manufacture method of a kind of conducting channel.
Background technology
The patterning of the conductivity channel layer being currently based on OTFT generally has following two mode: use high score
When sub-material makes, generally by the technique of " exposure-development-etching "；When using small molecule material to make, generally use directly
The technique of " mask-evaporation ".But both the above mode needs to use the vacuum evaporation of high standard, exposure sources or fine
Metal evaporation template, thus adds additional cost of equipment, and technological process is more complicated.
Therefore, it is necessary to provide the manufacture method of a kind of conducting channel, to solve the problem existing for prior art.
Summary of the invention
It is an object of the invention to provide the manufacture method of a kind of conducting channel, to solve existing conducting channel making side
Method needs to use the equipment of some high standards, thus adds additional cost of equipment, and the more complicated technology of technological process is asked
Topic.
For solving the problems referred to above, the technical scheme that the present invention provides is as follows:
The embodiment of the present invention provides the manufacture method of a kind of conducting channel, comprising:
One substrate is provided；
Substrate is formed the first organic sacrificing layer of a patterning；
Substrate is formed the first organic semiconductor layer of a patterning, the first organic semiconductor layer bag wherein patterned
Including the first raceway groove part and the first non-raceway groove part, the first non-groove divides on the first organic sacrificing layer being arranged on patterning；
Remove the first organic sacrificing layer of patterning so that the first raceway groove part of the first organic semiconductor layer of patterning
Form the first conducting channel；
Substrate is formed the second organic sacrificing layer of a patterning；
Substrate is formed the second organic semiconductor layer of a patterning, the second organic semiconductor layer bag wherein patterned
Including the second raceway groove part and the second non-raceway groove part, the second non-groove divides and is arranged on the first conducting channel；
Remove the second organic sacrificing layer of patterning so that the second raceway groove part of the second organic semiconductor layer of patterning
Form the second conducting channel.
In the manufacture method of the conducting channel of the present invention, removing the first organic sacrificing layer of patterning and having with first
The first organic semiconductor layer that machine sacrifice layer is overlapping, after forming the step of the first conducting channel, is carried out the first conducting channel
Cured.
In the manufacture method of the conducting channel of the present invention, at the first organic sacrificing layer removing patterning so that pattern
After first groove of the first organic semiconductor layer changed divides the step forming the first conducting channel, the first conducting channel is carried out
Cured.
In the manufacture method of the conducting channel of the present invention, at the second organic sacrificing layer removing patterning so that pattern
After second groove of the second organic semiconductor layer changed divides the step forming the second conducting channel, the second conducting channel is carried out
Cured.
In the manufacture method of the conducting channel of the present invention, can solidify by the way of heating or ultraviolet irradiation
Process.
In the manufacture method of the conducting channel of the present invention, remove the first organic sacrificing layer of patterning so that patterning
The first groove of the first organic semiconductor layer divide in the step forming the first conducting channel, the method that mechanical stripping can be used
Or use the solvent of the first organic sacrificing layer that can dissolve patterning.
In the manufacture method of the conducting channel of the present invention, remove the second organic sacrificing layer of patterning so that patterning
The second groove of the second organic semiconductor layer divide in the step forming the second conducting channel, the method that mechanical stripping can be used
Or use the solvent of the second organic sacrificing layer that can dissolve patterning.
In the manufacture method of the conducting channel of the present invention, inkjet printing, lithographic printing, silk screen printing or electrostatic can be passed through
The mode of spinning forms the first organic sacrificing layer of patterning, the second organic semiconductor layer of patterning, the second of patterning has
Machine sacrifice layer and the second organic semiconductor layer of patterning.
In the manufacture method of the conducting channel of the present invention, forming the first of patterning also by a kind of printing equipment has
The second of machine sacrifice layer, the second organic semiconductor layer of patterning, the second organic sacrificing layer of patterning and patterning is organic
Semiconductor layer.
In the manufacture method of the conducting channel of the present invention, form, by a kind of printing equipment, first patterned organic sacrificial
The second of domestic animal layer, the second organic semiconductor layer of patterning, the second organic sacrificing layer of patterning and patterning organic is partly led
In the step of body layer, including:
The first organic sacrificing layer that will be patterned into, the second organic semiconductor layer of patterning, patterning second organic sacrificial
The ink shape printing liquid setting viscosity made by the material that second organic semiconductor layer of domestic animal layer or patterning uses；
Ink shape printing liquid is put in the liquid storage tank of printing equipment；
Liquid storage tank is provided periodic pressure, thus impressing spout is carried out feed flow so that impressing spout is on substrate
Print out default pattern.
In the manufacture method of the conducting channel of the present invention, can print not by changing difform impressing spout
The pattern of similar shape.
Compared to the manufacture method of existing conducting channel, the manufacture method of the conducting channel of the present invention can be at target base
On plate or other functional layer, the directly conducting channel of definition patterning, the vacuum or the printing that are not required to some high standards set
Standby, decrease cost of equipment, and technological process is simpler.
For the foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate institute's accompanying drawings, make
Describe in detail as follows:
Accompanying drawing explanation
Below in conjunction with the accompanying drawings, by the detailed description of the invention of the present invention is described in detail, technical scheme will be made
And other beneficial effect is apparent.
Fig. 1 is the process flow diagram of the manufacture method of the conducting channel of the embodiment of the present invention；
Fig. 2 A-2F is the manufacture method concrete steps schematic diagram of the conducting channel of the embodiment of the present invention；
Fig. 3 is the structural representation of a kind of printing equipment of the embodiment of the present invention；
Fig. 4 is the use schematic diagram of a kind of printing equipment of the embodiment of the present invention.
Detailed description of the invention
By further illustrating the technological means and effect, being preferable to carry out below in conjunction with the present invention that the present invention taked
Example and accompanying drawing thereof are described in detail.
See Fig. 1, for the process flow diagram of manufacture method of the conducting channel of the embodiment of the present invention.
Step S101 a, it is provided that substrate；
Step S102, forms the first organic sacrificing layer of a patterning on substrate；
Step S103, forms the first organic semiconductor layer of a patterning on substrate, and first wherein patterned is organic
Semiconductor layer includes the first raceway groove part and the first non-raceway groove part, and the first non-groove divides be arranged on patterning first organic
On sacrifice layer；
Step S104, removes patterning the first organic sacrificing layer, makes to cover the first organic sacrificial at patterning simultaneously
The non-raceway groove part of above-mentioned first organic semiconductor layer on layer is removed so that pattern the first of the first organic semiconductor layer
Groove divides formation the first conducting channel；
Step S105, forms the second organic sacrificing layer of a patterning on substrate；
Step S106, forms the second organic semiconductor layer of a patterning on substrate, and second wherein patterned is organic
Semiconductor layer includes the second raceway groove part and the second non-raceway groove part, and the second non-groove divides and is arranged on the first conducting channel；
Step S107, removes the second organic sacrificing layer of patterning, makes covering organic sacrificial second patterned simultaneously
The non-raceway groove part of above-mentioned second organic semiconductor layer on domestic animal layer is removed so that the second organic semiconductor layer of patterning
Second groove divides formation the second conducting channel.
The detailed process of each step the following detailed description of the file backup method of this preferred embodiment.
In step S101, S102, as shown in Figure 2 A, it is provided that a substrate 201, substrate 201 can be glass substrate or plastics
Substrate, forms the first organic sacrificing layer 202 of a patterning, wherein, the first organic sacrificing layer of patterning on substrate 201
202 can be perfluor cyclopolymer or acrylic material.
In step s 103, as shown in Figure 2 B, substrate 201 forms the first organic semiconductor layer of a patterning, its
First organic semiconductor layer of middle patterning includes the first raceway groove part 203A and the first non-raceway groove part 203B, the first groove
Point 203A is positioned at the first organic sacrificing layer 202 arranged on left and right sides of patterning, and the first non-raceway groove part 203B is positioned at the of patterning
On one organic sacrificing layer 202.The embodiment of the present invention makes the first organic sacrificing layer 202 left and right by the first organic sacrificing layer 202
First raceway groove part 203A of both sides is finer.
In step S104, as shown in Figure 2 C, the first organic sacrificing layer 202 of patterning is removed so that the of patterning
First raceway groove part 203A of one organic semiconductor layer forms the first conducting channel.
Specifically, the method that can be by mechanically pulling off removes the first organic sacrificing layer 202 of patterning, is positioned at pattern simultaneously
First non-raceway groove part 203B of patterning the first organic semiconductor layer on the first organic sacrificing layer 202 changed also is removed,
First raceway groove part 203A of remaining patterning the first organic semiconductor layer is formed for the first conducting channel；Energy can also be used
The solvent of enough the first organic sacrificing layers 202 dissolving patterning, removes the first organic sacrificing layer 202, is positioned at patterning simultaneously
The first organic sacrificing layer 202 on first non-raceway groove part 203B of the first organic semiconductor layer of patterning be also removed,
First raceway groove part 203A of the first organic semiconductor layer of remaining patterning is formed for the first conducting channel.
After forming the first conducting channel, tackle the first conducting channel and carry out cured, specifically, can by heating or
The mode that ultraviolet irradiates carries out cured.
In step S105, as shown in Figure 2 D, substrate 201 forms the second organic sacrificing layer 204 of a patterning, its
In, the second organic sacrificing layer 204 of patterning can be perfluor cyclopolymer or acrylic material.
In step s 106, as shown in Figure 2 E, substrate 201 forms the second organic semiconductor layer of a patterning, its
Second organic semiconductor layer bag 205 of middle patterning includes the second raceway groove part 205A and the second non-raceway groove part 205B, the second ditch
Road part 205A is positioned at the first conducting channel arranged on left and right sides, and it is second organic that the second non-raceway groove part 205B is arranged on patterning
On sacrifice layer 204.
In step s 107, as shown in Figure 2 F, the second organic sacrificing layer 204 of patterning is removed so that the of patterning
Second raceway groove part 205A of two organic semiconductor layers forms the second conducting channel.
Specifically, the method that can be by mechanically pulling off removes the second organic sacrificing layer 204 of patterning, is positioned at pattern simultaneously
Second non-raceway groove part 205B of the second organic semiconductor layer of the patterning on the second organic sacrificing layer 204 changed also is gone
Falling, the second raceway groove part 205A of the second organic semiconductor layer of remaining patterning is formed for the second conducting channel；All right
Use can dissolve the solvent of the second organic sacrificing layer 204 of patterning, is removed by the second organic sacrificing layer 204, is positioned at simultaneously
Patterning the second organic sacrificing layer 204 on patterning the second organic semiconductor layer the second non-raceway groove part 205B also by
Removing, the second raceway groove part 205A of the second organic semiconductor layer of remaining patterning is formed for the second conducting channel.
After forming the second conducting channel, tackle the second conducting channel and carry out cured, specifically, can by heating or
The mode that ultraviolet irradiates carries out cured.
In step S102, S103, S105, S106, inkjet printing, lithographic printing, silk screen printing or Static Spinning can be passed through
The mode of silk formed the first organic sacrificing layer of patterning, the second organic semiconductor layer of patterning, patterning second organic
Sacrifice layer and the second organic semiconductor layer of patterning.
The embodiment of the present invention can also form first organic sacrificing layer of patterning, patterning by a kind of printing equipment
Second organic semiconductor layer, the second organic sacrificing layer of patterning and the second organic semiconductor layer of patterning.
As it is shown on figure 3, be the structural representation of a kind of printing equipment of the embodiment of the present invention；
The printing equipment of the present invention includes: cover plate 301,304, first, liquid storage tank the 302, first spring the 303, second spring
Support part part the 305, second support member 306 and impressing spout 307；Wherein, cover plate 301 is positioned at above liquid storage tank 302, cover plate
301 are slidably connected with liquid storage tank 302；One end of first spring 303 is connected with one end of liquid storage tank 302, the first spring 303 another
One end is connected with the first support member 305；One end of second spring 304 is connected with the other end of liquid storage tank 302, the second spring
The other end and second support member 306 of 304 connect；Being provided with an opening below liquid storage tank 302, impressing spout 307 is with opening even
Connect.
When printing equipment uses, first, the first organic sacrificing layer that will be patterned into, the second organic semiconductor of patterning
The ink setting viscosity made by the material that second organic semiconductor layer of layer, the second organic sacrificing layer of patterning or patterning uses
Watery printing liquid；Then, ink shape printing liquid is put in the liquid storage tank 302 of printing equipment；Finally, liquid storage tank 302 is provided
Periodically pressure, thus impressing spout 307 is carried out feed flow so that impressing spout 307 prints out default on substrate 308
Pattern.
Specifically, when printing equipment is non-print state, the first spring 303 and the second spring 304 support liquid storage tank 302
Be in extreme higher position, now the first supporting part 305 and the second support member 306 not with liquid storage tank 302 lower opening at sidewall
Contact, liquid storage tank 302 not to impressing spout 307 feed flow, printing equipment external print pattern；As shown in Figure 4, printing equipment is
During print state, by a drivewheel 309, cover plate can be applied pressure, now the first spring 303 and the second spring 304 compress,
It is in extreme lower position, the first supporting part, 305 and second support member 306 and liquid storage tank 302 sidewall contact, and with certain pressure
Sidewall at power extruding liquid storage tank 302 lower opening, thus to impressing spout 307 feed flow, the external print pattern of printing equipment.
The embodiment of the present invention can coordinate substrate 308 by rotation cyclic switching between above two state of drivewheel 309
Move horizontally, print rule periodic patterns.Further, can beat by changing difform impressing spout 307
Print off difform pattern.
The manufacture method of the conducting channel of the present invention can directly define pattern in target base plate or other functional layer
The conducting channel changed, is not required to the equipment of some high standards, decreases cost of equipment, and technological process is simpler.
To sum up, although the present invention is disclosed above with preferred embodiment, but above preferred embodiment and be not used to limit this
Invention, those of ordinary skill in the art, without departing from the spirit and scope of the present invention, various change and retouching all can be made,
Therefore protection scope of the present invention defines in the range of standard with claim.
Claims (10)
1. the manufacture method of a conducting channel, it is characterised in that including:
One substrate is provided；
Form the first organic sacrificing layer of a patterning on the substrate；
Form the first organic semiconductor layer of a patterning, the first organic semiconductor of wherein said patterning on the substrate
Layer includes the first raceway groove part and the first non-raceway groove part, and described first non-groove divides be arranged on described patterning first to have
On machine sacrifice layer；
Remove the first organic sacrificing layer of described patterning so that the first raceway groove of the first organic semiconductor layer of described patterning
Part forms the first conducting channel；
Form the second organic sacrificing layer of a patterning on the substrate；
Form the second organic semiconductor layer of a patterning, the second organic semiconductor of wherein said patterning on the substrate
Layer includes the second raceway groove part and the second non-raceway groove part, and described second non-groove divides and is arranged on described first conducting channel
On；
Remove the second organic sacrificing layer of described patterning so that the second raceway groove of the second organic semiconductor layer of described patterning
Part forms the second conducting channel.
The manufacture method of conducting channel the most according to claim 1, it is characterised in that at the described patterning of described removal
First organic sacrificing layer so that the first groove of the first organic semiconductor layer of described patterning divides formation the first conducting channel
Step after, described first conducting channel is carried out cured.
The manufacture method of conducting channel the most according to claim 1, it is characterised in that at the described patterning of described removal
Second organic sacrificing layer so that the second groove of the second organic semiconductor layer of described patterning divides formation the second conducting channel
Step after, described second conducting channel is carried out cured.
4. according to the manufacture method of the conducting channel described in Claims 2 or 3, it is characterised in that can be by heating or ultraviolet
The mode that line irradiates carries out cured.
The manufacture method of conducting channel the most according to claim 1, it is characterised in that the of the described patterning of described removal
One organic sacrificing layer so that the first groove of the first organic semiconductor layer of described patterning divides formation the first conducting channel
In step, the method for mechanical stripping can be used or use the solvent of the first organic sacrificing layer that can dissolve described patterning.
The manufacture method of conducting channel the most according to claim 1, it is characterised in that the of the described patterning of described removal
Two organic sacrificing layers so that the second groove of the second organic semiconductor layer of described patterning divides formation the second conducting channel
In step, the method for mechanical stripping can be used or use the solvent of the second organic sacrificing layer that can dissolve described patterning.
The manufacture method of conducting channel the most according to claim 1, it is characterised in that inkjet printing, lithographic plate print can be passed through
Brush, the mode of silk screen printing or electrostatic spinning formed the first organic sacrificing layer of described patterning, the second organic half of patterning
Conductor layer, the second organic sacrificing layer of patterning and the second organic semiconductor layer of patterning.
The manufacture method of conducting channel the most according to claim 1, it is characterised in that also by a kind of printing equipment shape
Become the first organic sacrificing layer of described patterning, the second organic semiconductor layer of patterning, the second organic sacrificing layer of patterning
And the second organic semiconductor layer of patterning.
The manufacture method of conducting channel the most according to claim 8, it is characterised in that described by a kind of printing equipment shape
Become the first organic sacrificing layer of described patterning, the second organic semiconductor layer of patterning, the second organic sacrificing layer of patterning
And in the step of the second organic semiconductor layer of patterning, including:
By the first organic sacrificing layer of described patterning, the second organic semiconductor layer of patterning, patterning second organic sacrificial
The ink shape printing liquid setting viscosity made by the material that second organic semiconductor layer of domestic animal layer or patterning uses；
Ink shape printing liquid is put in the liquid storage tank of described printing equipment；
Liquid storage tank is provided periodic pressure, thus impressing spout is carried out feed flow so that impressing spout is on the substrate
Print out default pattern.
The manufacture method of conducting channel the most according to claim 9, it is characterised in that can be difform by changing
Impressing spout, prints difform described pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610663451.2A CN106058050B (en) | 2016-08-12 | 2016-08-12 | A kind of production method of conducting channel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610663451.2A CN106058050B (en) | 2016-08-12 | 2016-08-12 | A kind of production method of conducting channel |
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| CN106058050A true CN106058050A (en) | 2016-10-26 |
| CN106058050B CN106058050B (en) | 2019-02-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI707010B (en) * | 2018-10-24 | 2020-10-11 | 明志科技大學 | Manufacturing method of flexible substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515313A (en) * | 2012-10-29 | 2014-01-15 | Tcl集团股份有限公司 | Stripping method of flexible substrate for displayer |
| CN104637823A (en) * | 2015-02-06 | 2015-05-20 | 京东方科技集团股份有限公司 | Preparing method of thin film transistor, thin film transistor and array base plate |
| WO2016024823A1 (en) * | 2014-08-14 | 2016-02-18 | 광주과학기술원 | Orthogonal patterning method |
-
2016
- 2016-08-12 CN CN201610663451.2A patent/CN106058050B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515313A (en) * | 2012-10-29 | 2014-01-15 | Tcl集团股份有限公司 | Stripping method of flexible substrate for displayer |
| WO2016024823A1 (en) * | 2014-08-14 | 2016-02-18 | 광주과학기술원 | Orthogonal patterning method |
| CN104637823A (en) * | 2015-02-06 | 2015-05-20 | 京东方科技集团股份有限公司 | Preparing method of thin film transistor, thin film transistor and array base plate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI707010B (en) * | 2018-10-24 | 2020-10-11 | 明志科技大學 | Manufacturing method of flexible substrate |
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Effective date of registration: 20201214 Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: Building C5, biological city, NO.666, Gaoxin Avenue, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan China Star Optoelectronics Technology Co.,Ltd. |
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Effective date of registration: 20210310 Address after: No.109, Kangping Road, Liuyang economic and Technological Development Zone, Changsha, Hunan 410300 Patentee after: Changsha Huike optoelectronics Co., Ltd Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL Huaxing Photoelectric Technology Co.,Ltd. |